CN207818576U - The encapsulating structure of semiconductor devices - Google Patents
The encapsulating structure of semiconductor devices Download PDFInfo
- Publication number
- CN207818576U CN207818576U CN201820262527.5U CN201820262527U CN207818576U CN 207818576 U CN207818576 U CN 207818576U CN 201820262527 U CN201820262527 U CN 201820262527U CN 207818576 U CN207818576 U CN 207818576U
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- ceramic member
- semiconductor devices
- encapsulating structure
- heat sink
- metal heat
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of encapsulating structures of semiconductor devices, the encapsulating structure includes the metallic plate for opening up straight slot, ceramic member and the metal heat sink for being welded on the ceramic member back side, and the ceramic member and metal heat sink are vertically inserted in the straight slot and are welded with the metallic plate；The metal heat sink is for being arranged semiconductor and support circuit.In above-mentioned technical proposal, ceramic member replaces glass sealing, has metalization-interconnection inside ceramic member, can make the metallization pattern of complicated connection relation, and electrical property interconnection is more flexible；Metallized traces are carried out using ceramic member in encapsulating structure, compared to the round lead precision higher of machining, the transmission for high-frequency signal has better radio-frequency performance；Increase the higher metal heat sink of thermal diffusivity in encapsulating structure so that package casing has good heat sinking function.
Description
Technical field
The utility model belongs to semiconductor device packaging technique field, and in particular to a kind of encapsulation knot of semiconductor devices
Structure.
Background technology
Traditional circular package shell is metal-glass structure, referring to Fig. 1 a and Fig. 1 b, generally circular sheet metal
20 and glass insulator 50 and metal lead wire 10 constitute, the welding glass insulator in 20 surface trepanning of circular sheet metal, hole
50, welding metal lead 10 on glass insulator 50 passes through cylindrical metal lead wires 10 and realizes signal transmission.
Traditional photovoltaic class shell uses multilayer ceramic structure, and optic path path and lead direction are horizontal, and with sealing
Face is horizontal, referring to Fig. 2.And circular housing optic path path is vertical with sealing face in Fig. 1 a, sealing form uses high-voltage energy storage
Weldering mode is completed, and the intensity that such glass insulator 50 is born is relatively low, cause typical round shell can not complete thermal conductivity compared with
High metal is welded, therefore the thermal diffusivity of shell is poor；Further, the wire locations of metal-glass structure are more single, and are
Bypass structure, it has not been convenient to carry out the connection of chip and lead, and number of leads cannot meet requirement, cannot achieve inner core
The interconnection of piece circuit and foreign current, and then affect the application of device and module in complete machine.
Utility model content
The utility model embodiment is designed to provide a kind of encapsulating structure of semiconductor devices, it is intended to solve traditional round
In shape encapsulating structure, package casing thermal diffusivity is poor, wire locations are single defect.
To achieve the above object, the utility model embodiment the technical solution adopted is that：
A kind of encapsulating structure of semiconductor devices, including：
Metallic plate has each other relative first surface, second surface and the straight slot through first, second surface；
Ceramic member, the inside and outside electrical connection for being packaged semiconductor devices, the ceramic member are internally provided with the metal of interconnection
Change figure；
Metal heat sink is welded on the back side of the ceramic member, for semiconductor devices and support circuit to be arranged；
The ceramic member and metal heat sink are vertically inserted in the straight slot and are tightly connected with the metallic plate.
Further, the encapsulating structure of the semiconductor devices further includes block, is connected to the first table of the metallic plate
On face or second surface, the semiconductor devices is used to support and sealed.
Optionally, concave station is set on the metallic plate, along the straight slot periphery, and the concave station is for limiting welding weldering
Material；
Or groove is set on the ceramic member and metal heat sink peripheral wall corresponding with the straight slot, the groove is for limiting
Position welding solder.
The encapsulating structure that the utility model embodiment provides has the advantages that：
(1) the utility model replaces glass sealing using ceramic member, has metalization-interconnection inside ceramic member, can make multiple
The metallization pattern of miscellaneous connection relation, electrical property interconnection are more flexible；
(2) metallized traces are carried out using ceramic member in encapsulating structure, compares the round lead precision higher of machining, for
The transmission of high-frequency signal has better radio-frequency performance；
(3) increase the higher metal heat sink of thermal diffusivity in encapsulating structure so that package casing has good heat dissipation work(
Energy；
(4) metallic plate-ceramic member encapsulating structure is used, there is higher-strength than metallic plate-glass package structure, greatly
Improve shell reliability.
Description of the drawings
Fig. 1 a are circular package structural schematic diagram in the prior art；
Fig. 1 b are the present invention looks up structural representation of Fig. 1 a；
Fig. 2 is the schematic diagram of Traditional photovoltaic package casing in the prior art；
Fig. 3 is the encapsulating structure schematic diagram for the semiconductor devices that the utility model embodiment provides；
Fig. 4 is the left view structural representation of Fig. 3；
Fig. 5 is the overlooking structure diagram of Fig. 3；
Wherein, solid arrow indicates that optical path direction, dotted arrow indicate signal transmission direction；
Reference numeral：
10- lead 20- metallic plate 30- blocks
40- lens 50- glass insulator 60- ceramic members
70- metal heat sinks.
Specific implementation mode
In order to make technical problem to be solved in the utility model, technical solution and advantageous effect be more clearly understood, with
Lower combination accompanying drawings and embodiments, the present invention will be further described in detail.It should be appreciated that specific reality described herein
It applies example to be only used to explain the utility model, is not used to limit the utility model.
The encapsulating structure that the utility model embodiment provides, is the improvement to typical round metallic plate-glass package structure.
Glass insulator is not only replaced with into ceramic member, adds metal heat sink, and ceramic member and metal heat sink are vertically inserted and welded
On a metal plate.Ceramic member uses multi-layer ceramics, increases the diversification of wiring, and metal heat sink makes component preferably radiate,
Extend the service life, plays the role of protecting component.
Fig. 3-Fig. 5 is please referred to, now the encapsulating structure of semiconductor devices provided by the utility model is described in detail.Institute
It includes metallic plate 20, ceramic member 60 and metal heat sink 70 to state encapsulating structure, and the metallic plate 20 has the first table relative to each other
Face, second surface and the straight slot through first, second surface；The ceramic member 60 is for being packaged semiconductor devices
Inside and outside electrical connection, the ceramic member are internally provided with the metallization pattern of interconnection；The metal heat sink 70 is welded on the ceramics
The back side of part 60, for semiconductor devices and support circuit to be arranged；The ceramic member 60 and metal heat sink 70 are vertically inserted in institute
It states in straight slot and is tightly connected with the metallic plate.
The utility model embodiment provides a kind of encapsulating structure of metal-ceramic structure, with gold in the prior art
Category-glass package structure is compared, and the advantage being more flexible not only is interconnected with electrical property, is also had after adding metal heat sink 70
The advantages of good heat dissipation effect；And the ceramic member 60 and metal heat sink 70 are vertically inserted in the straight slot and and metal
Plate 20 welds, and the welding of this metal-ceramic, metal-metal has higher intensity and reliability.
In order to form the shell of air-tightness, the encapsulating structure further includes block, is welded on the first of the metallic plate 20
On surface or second surface, for sealing the semiconductor devices, i.e., block is arranged according to the position of semiconductor devices.Specifically make
Support circuit can be arranged on the metal heat sink 20, and semiconductor devices is connect with support circuit, the block used time
Setting carries out sealing-in in the semiconductor devices periphery, by stored energy welding mode and the metallic plate 20.It is provided for semiconductor device
Electricity, heat passage and mechanical support and airtight environmental protection.
In other embodiments, when for example being used for the encapsulation of photoelectric device, lens are also set up in the block, it is described
Mirror is can be with the element of light transmission.
Optionally, it is round that the first surface of the metallic plate 20, second surface, which are circle, using No. 10 steel, stainless steels
Or metal can be cut down, to improve the reliability of encapsulation.
The ceramic member 60 is made of multilayer aluminium oxide ceramics of laminating technology.The ingredient of aluminium oxide be 90%~
96%, it is made using multi-layer ceramics technique.Aluminium oxide ceramic chips are specifically made using casting technique, are used on ceramic chips surface
Tungsten slurry or molybdenum slurry make metallization pattern, and laminated ceramic chips force together into green array, and each array includes multiple lifes
Porcelain piece, then it is cut into single green part with cutting equipment, then carry out high temperature sintering and form.Ceramic member becomes worked in prolonged temperature
Shell reliability is high in journey.
The cross section of the ceramic member 20 is rectangle.It is relatively beneficial to semiconductor chip in this way and abuts rectangle with support circuit
Face more easily carries out the bonding connection of circuit.
In order to facilitate sealing, the straight slot and the ceramic member 60 and 70 phase of metal heat sink that are inserted into the straight slot are suitable
Match, i.e., the shapes and sizes of the described straight slot are adapted with the cross section of the ceramic member 60 of inserting and metal heat sink 70.
In one embodiment, concave station is set on the metallic plate 20, along the straight slot periphery, and the concave station is for limiting
Welding solder.Solder fusing can be completed to the welding of the ceramic member 60 and metal heat sink 70 and metallic plate 20.
In other embodiments, it can also be set on the ceramic member 60 and the peripheral wall corresponding with the straight slot of metal heat sink 70
Groove is set, the groove is for limiting welding solder.Solder fusing can also be completed into the ceramic member 60 and metal heat sink 70
With the welding of metallic plate 20.
Tungsten copper, molybdenum copper or copper can be used in the metal heat sink 70.There are higher thermal conductivity and intensity, dissipating for shell can be met
Heat demand.
In conclusion according to design requirement, as shown in figure 3, semiconductor devices and support circuit can be arranged in metallic plate
On the metal heat sink 70 of 20 tops, it can also be arranged on the metal heat sink 70 below metallic plate 20；The pin of support circuit is logical
Ceramic member 60 is crossed to be electrically connected with outside.Block is set according to the position of the semiconductor devices.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
All any modification, equivalent and improvement etc., should be included in the utility model made by within the spirit and principle of utility model
Protection domain within.
Claims (10)
1. the encapsulating structure of semiconductor devices, which is characterized in that including：
Metallic plate has each other relative first surface, second surface and the straight slot through first, second surface；
Ceramic member, the inside and outside electrical connection for being packaged semiconductor devices, the ceramic member are internally provided with the metallization figure of interconnection
Shape；
Metal heat sink is welded on the back side of the ceramic member, for semiconductor devices and support circuit to be arranged；
The ceramic member and metal heat sink are vertically inserted in the straight slot and are tightly connected with the metallic plate.
2. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that further include：
Block is connected on the first surface or second surface of the metallic plate, for sealing the semiconductor devices.
3. the encapsulating structure of semiconductor devices as claimed in claim 2, which is characterized in that setting and described half in the block
The corresponding lens of light path of conductor device.
4. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that the ceramic member and metal heat sink with
The metallic plate welding.
5. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that the first surface of the metallic plate,
Second surface is circle, using No. 10 steel, stainless steel or can cut down metal.
6. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that the ceramic member is multilayer aluminium oxide
Ceramics.
7. the encapsulating structure of semiconductor devices as claimed in claim 6, which is characterized in that the cross section of the ceramic member is square
Shape.
8. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that the shapes and sizes of the straight slot with
The ceramic member of inserting and the cross section of metal heat sink are adapted.
9. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that
Concave station is set on the metallic plate, along the straight slot periphery, and the concave station is for limiting welding solder；
Or groove is set on the ceramic member and metal heat sink peripheral wall corresponding with the straight slot, the groove is welded for limiting
It connects and uses solder.
10. the encapsulating structure of semiconductor devices as described in claim 1, which is characterized in that tungsten can be used in the metal heat sink
Copper, molybdenum copper or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820262527.5U CN207818576U (en) | 2018-02-22 | 2018-02-22 | The encapsulating structure of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820262527.5U CN207818576U (en) | 2018-02-22 | 2018-02-22 | The encapsulating structure of semiconductor devices |
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| Publication Number | Publication Date |
|---|---|
| CN207818576U true CN207818576U (en) | 2018-09-04 |
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ID=63320242
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820262527.5U Active CN207818576U (en) | 2018-02-22 | 2018-02-22 | The encapsulating structure of semiconductor devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172633A (en) * | 2018-02-22 | 2018-06-15 | 河北中瓷电子科技有限公司 | A kind of encapsulating structure of semiconductor devices |
-
2018
- 2018-02-22 CN CN201820262527.5U patent/CN207818576U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172633A (en) * | 2018-02-22 | 2018-06-15 | 河北中瓷电子科技有限公司 | A kind of encapsulating structure of semiconductor devices |
| WO2019161683A1 (en) * | 2018-02-22 | 2019-08-29 | 河北中瓷电子科技有限公司 | Package structure for semiconductor device, and semiconductor device |
| US11309439B2 (en) | 2018-02-22 | 2022-04-19 | He Bei Sinopack Electronic Tech Co., Ltd. | Package structure for semiconductor device, and semiconductor device |
| CN108172633B (en) * | 2018-02-22 | 2024-09-10 | 河北中瓷电子科技有限公司 | Packaging structure of semiconductor device |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 050200 No. 21 Changsheng Street, Luquan Economic Development Zone, Shijiazhuang City, Hebei Province Patentee after: Hebei Zhongchi Electronic Technology Co., Ltd. Address before: 050200 No. 21 Changsheng Street, Luquan Economic Development Zone, Shijiazhuang City, Hebei Province Patentee before: HEBEI SINOPACK ELECTRONIC TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |