CN207624724U - A kind of half cell piece - Google Patents
A kind of half cell piece Download PDFInfo
- Publication number
- CN207624724U CN207624724U CN201820005806.3U CN201820005806U CN207624724U CN 207624724 U CN207624724 U CN 207624724U CN 201820005806 U CN201820005806 U CN 201820005806U CN 207624724 U CN207624724 U CN 207624724U
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- CN
- China
- Prior art keywords
- face
- silicon chip
- cell piece
- half cell
- main grid
- Prior art date
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model is related to a kind of half cell pieces, including half silicon chip, it is printed on a plurality of main grid on the half silicon chip and arranged in parallel, the one side of the half silicon chip is the cut surface that silicon chip is formed after cutting, the half silicon chip includes the multiple units being separated to form by the main grid, the cut surface of each unit includes the second face that the first face, one end are connected with first face, and gap is formed between the second face of the two neighboring unit.The utility model on half cell piece by forming gap, to make welding thermal region dexterously be avoided with laser scribing region, reduce the micro- hidden expansion split in laser melting region, hidden ratio is split to reduce, the outdoor reliability for ensureing component, in addition, the utility model and the associativity of existing general components technology and producing line are good, without carrying out big change to producing line, cost is relatively low.
Description
Technical field
The utility model is related to a kind of half cell pieces.
Background technology
High power, inexpensive crystalline silicon sun component are the main flow directions of photovoltaic industry development, recently as technology
Development and progress, crystal silicon component power is always in fast lifting, at the beginning of 2009 till now, the master of 60 polycrystalline components in industry
Power is flowed from 220W promotions to 265W, and the mainstream power of 60 mono-crystal components is promoted from 230W to 275W, is increased according to component power
Long trend may determine that polycrystalline component mainstream power in 2016,2017, which is up to 270-280W, could meet component power demand.
Meanwhile the publication of eight departments such as the January in 2015 of Committee of Development and Reform on the 8th《Efficiency " leader " system embodiment》And leader plans
To the transfer efficiency of polycrystalline component, higher requirements are also raised.It can be seen that the promotion of component transfer efficiency is extremely urgent.
Lifting assembly power generally uses high-efficiency battery, coated glass, high EVA thoroughly and thickens the modes such as welding reality at present
It is existing.But conventional batteries piece efficiency by technology itself is restricted improved efficiency space limited, the high-efficiency batteries skill such as PERC, black silicon
The fixed assets investment of art exploitation is larger;Pass through the improvement of encapsulating material(Such as coated glass, high saturating EVA)Although component can be reduced
Optical loss, lifting assembly transfer efficiency, but lasting promotion for component generated energy and assembly property it is steady in a long-term still
There are more uncertain factors, such as:Light transmittance can be by a fixing in the environment of long-term dust storm for the film on coated glass surface
It rings, it is still necessary to actually use process in power station further to confirm for high uvioresistant performance of EVA etc. thoroughly.So exploitation it is a set of it is low at
Originally, the crystal silicon solar component technology of high-output power becomes the Research Emphasis of coming years photovoltaic module.
In crystal silicon solar component manufacturing processes, resistance consumption is reduced(Reduce electricity loss)It is to promote crystal silicon component to turn
Efficiency is changed, the effective way of encapsulation loss is reduced.In component package, component can be both realized by changing battery strings frame mode
Internal resistance is greatly lowered, and then realizes the promotion of the reduction and transfer efficiency of component package loss.The technology at present(Half
Battery technology half-cell)Domestic and international research institution and a line enterprise also have begun to be attempted, but by technical bottleneck
Limitation, be still not carried out large-scale volume production, the front of half cell piece conventional at present is as shown in Figure 1, its cut surface is
Complete plane, main grid is perpendicular with cut surface and one end is connected with cut surface, but the main grid of the half cell piece is welding
It is easy to influence cut surface in the process, and cut surface is due to being that laser scribing forms, cold causus can lead to half in the case that acute
Battery occurs hidden splitting fragment in assembly end.
The patent of invention that application publication number is CN106169517A discloses a kind of photovoltaic module and its preparation process, too
Sun can be sliced to be parallel to main gate line direction by solar battery sheet edge and cut and be formed, and it includes to too to also disclose its preparation process
Positive energy cell piece carries out soldering, and Cutting Road is formed along solar battery sheet main gate line direction progress laser scribing is parallel to,
Sliver is carried out according to Cutting Road;Lamination, lamination, rim frame, attaching wire box, test.Although the patent reduces fragment, still,
The patent has carried out preparation process larger change, thus poor with the associativity of general components technology and producing line, needs
Larger change is carried out to producing line, increases cost.
Utility model content
It is good with general components technology and producing line associativity that the technical problem to be solved by the present invention is to provide a kind of
Half cell piece.
In order to solve the above-mentioned technical problem, the technical solution adopted in the utility model is:
A kind of half cell piece, including half silicon chip, be printed on the half silicon chip and arranged in parallel more
Main grid, the one side of the half silicon chip are the cut surface that silicon chip is formed after cutting, and the half silicon chip includes by institute
The cut surface of multiple units that the main grid stated is separated to form, each unit includes the first face, one end and first face
The second face being connected forms gap between the second face of the two neighboring unit.
Preferably, first face is plane.
Preferably, first face and the main grid are perpendicular.
Preferably, second face is curved surface or inclined-plane.
It is further preferred that second face is cambered surface.
Preferably, the one end of the main grid is connected with the other end in second face.
Preferably, the gap is in inner small and outside big tubaeform.
Specifically, the second face for being located at the unit of both sides is one;It is positioned at the second face of the intermediate unit
Two, the both ends in first face are connected with the one end in the second face described in two respectively.
The scope of the utility model, however it is not limited to technical solution made of the specific combination of above-mentioned technical characteristic, while
The other technical solutions for being carried out arbitrary combination by above-mentioned technical characteristic or its equivalent feature and being formed should be covered.Such as features described above
With it is disclosed herein(But it is not limited to)Technical characteristic with similar functions is replaced mutually and the technical solution that is formed
Deng.
Since above-mentioned technical proposal is used, the utility model has following advantages compared with prior art:
The utility model on half cell piece by forming gap, to keep welding thermal region and laser scribing region skilful
Avoid wonderfully, reduce the micro- hidden expansion split in laser melting region, to reduce it is hidden split ratio, ensure the outdoor reliability of component,
In addition, the utility model and the associativity of existing general components technology and producing line are good, without carrying out big change to producing line,
Cost is relatively low.
Description of the drawings
Attached drawing 1 is the front appearance schematic diagram of conventional half cell piece, wherein 1, main grid;2, cut surface;
Attached drawing 2 is the front appearance schematic diagram of the half cell piece of the utility model, wherein:1, main grid;11, unit;21、
First face;22, the second face;3, gap.
Specific implementation mode
A kind of half cell piece as shown in Figure 2, including half silicon chip, be printed on it is on half silicon chip and arranged in parallel
A plurality of main grid 1.
Half silicon chip is formed through laser scribing by silicon chip, thus, the one side of half silicon chip is that silicon chip is formed after cutting
Cut surface.
Half silicon chip includes the multiple units 11 being separated to form by main grid 1, and in attached drawing 2, main grid 1 has four, four masters
Half silicon chip is separated into 5 units 11 by grid 1.
The cut surface of each unit 11 includes the second face 22 that the first face 21, one end are connected with the first face 21, and adjacent two
Gap 3 is formed between second face 22 of a unit 11, gap 3 is in inner small and outside big tubaeform.
First face 21 is plane, and the first face 21 and main grid 1 are perpendicular.
Second face 22 is curved surface or inclined-plane, and in the present embodiment, the second face 22 is cambered surface.
The one end of main grid 1 is connected with the other end in the second face 22, i.e., the one end part of main grid 1 is in the bottom in gap 3.
It it is one positioned at the second face 22 of the unit of both sides;It is two positioned at the second face 22 of intermediate unit, the first face
21 both ends are connected with the one end in two the second faces 22 respectively, that is, are located at the one end in second face 22 of intermediate unit
It is connected with the one end in the first face 21, the other end in the first face 21 is connected with the one end in another the second face 22.
The utility model reduces cut surface heating degree to reduce hidden split by reducing the heat conduction of main grid 1 at cut surface
Probability.
As described above, we are illustrated fully according to the objective of the utility model, but the utility model not limits to
In above-described embodiment and implementation.The range that the practitioner of correlative technology field can permit in the technological thought of the utility model
It is interior to carry out different variation and implementation.
Claims (8)
1. a kind of half cell piece, including half silicon chip, it is printed on the half silicon chip and arranged in parallel a plurality of
Main grid(1), the one side of the half silicon chip is the cut surface that silicon chip is formed after cutting, it is characterised in that:The half
Silicon chip includes by the main grid(1)The multiple units being separated to form(11), each unit(11)Cut surface include the
On one side(21), one end and first face(21)The second face being connected(22), the two neighboring unit(11)Second
Face(22)Between form gap(3).
2. half cell piece according to claim 1, it is characterised in that:First face(21)For plane.
3. half cell piece according to claim 1 or 2, it is characterised in that:First face(21)With the master
Grid(1)It is perpendicular.
4. half cell piece according to claim 1, it is characterised in that:Second face(22)For curved surface or inclined-plane.
5. half cell piece according to claim 4, it is characterised in that:Second face(22)For cambered surface.
6. half cell piece according to claim 1, it is characterised in that:The main grid(1)One end with it is described
Second face(22)The other end be connected.
7. half cell piece according to claim 1, it is characterised in that:The gap(3)In inner small and outside big loudspeaker
Shape.
8. half cell piece according to claim 1, it is characterised in that:Positioned at the second face of the unit of both sides(22)
It is one;Positioned at the second face of the intermediate unit(22)It is two, first face(21)Both ends respectively with two
Second face(22)One end be connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820005806.3U CN207624724U (en) | 2018-01-03 | 2018-01-03 | A kind of half cell piece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820005806.3U CN207624724U (en) | 2018-01-03 | 2018-01-03 | A kind of half cell piece |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207624724U true CN207624724U (en) | 2018-07-17 |
Family
ID=62830913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201820005806.3U Active CN207624724U (en) | 2018-01-03 | 2018-01-03 | A kind of half cell piece |
Country Status (1)
Country | Link |
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CN (1) | CN207624724U (en) |
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2018
- 2018-01-03 CN CN201820005806.3U patent/CN207624724U/en active Active
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