CN207543114U - Terahertz minimizes multifunctional unit receiver front end - Google Patents

Abstract

The utility model discloses Terahertzs to minimize multifunctional unit receiver front end, including amplifier circuit in low noise, subharmonic mixer circuit, local oscillator drive source circuit and metal cavity, the amplifier circuit in low noise and subharmonic mixer circuit are respectively positioned on the GaAs substrates in metal cavity, and the metal cavity includes low-noise amplifier input cavity, mixer chamber and frequency mixer local oscillator input cavity；The local oscillator drive source circuit is located on the GaAs substrates of local oscillator driving source intracavitary, and local oscillator driving source chamber is vertically mounted on frequency mixer local oscillator input cavity.The utility model passes through above structure, low-noise amplifier, frequency mixer and local oscillator driving source are processed in same substrate and cavity, low noise amplification, frequency multiplication and the multiple functions of mixing can be achieved at the same time, greatly reduce the cost and complexity of Terahertz receiver, realize the miniaturization of Terahertz receiver front end, effectively simplify circuit design and processing, cost-effective, reduction internal loss.

Description

Terahertz minimizes multifunctional unit receiver front end

Technical field

The utility model is related to receiver fields, and in particular to Terahertz minimizes multifunctional unit receiver front end.

Background technology

In electromagnetic spectrum family, Terahertz (Terahertz, the THz) wave of frequency in 0.1THz to 10THz ranges is in Specific position between electronics and photonic propulsion research frequency range.In the development process of science and technology, the research to this frequency range With develop and use once be limited by the limitation of scientific research means and technical conditions at that time and develop it is later, be once called electromagnetism frequency " gap " in spectrum is limited in astrophysics and radio astronomy field its research and technological development, at these Field needs to study the molecule spectroscopy (molecular spectroscopy) of Terahertz frequency range so as to the substance structure of exploration of the universe Into.With the progress of science and technology, while the also particularity just because of Terahertz frequency range position and the exploration to the frequency range It is relatively fewer with utilizing, over nearest twenty or thirty year, one Terahertz science and skill have all been started in academia's even industrial quarters The upsurge of art research, numerous Environment Science subjects enter the research virgin land one after another so that Terahertz science and technology has become at present A big hot research field for international academic community.

Since Terahertz frequency range is in frequency spectrum transition region of the macroscopic classical theories to Bcs Theory, the production of THz wave The mechanism such as raw, detection, regulation and control are similar and different to the mechanism of conventional electronics and infrared photon, existing maturation Some theory and technology methods be difficult to be completely suitable for Terahertz frequency range, this just needs exploratory development to adapt to the new of this frequency range Theoretical and new method, that is to say, that preferably to explore and using THz wave, needing the innovation of correlation theory and dashing forward for technology It is broken.Everything has attracted the related disciplines such as micro-nano electronics, nonlinear optics, crystalline material, life science to terahertz Hereby frequency range infiltration and extension, have gradually formed many completely new crossing research directions and research field, while these research directions Also constantly extending.

The Terahertz circuit module studied at present is mostly simple function module, is only capable of realizing that low noise amplification or mixing are single One function, and cascaded on the basis of single module to realize Terahertz circuit system.Each separate modular needs in design A substrate and cavity is wanted to carry out bearer circuit, therefore multiple substrates and cavity are needed in integrated circuit, and needs to connect waveguide. Design processing is more complicated, of high cost and with the loss of unnecessary internal transmission in this way.Realize solid-state Terahertz application system Premise, it is necessary first to study high-performance Terahertz receiving front-end system.In existing receiver system, low noise amplification Device, frequency mixer, local oscillator driving source are processed design as individual module, then by the output waveguide of local oscillator driving source with The local oscillator waveguide of frequency mixer is connected, and local oscillator driving source is made to provide energy for frequency mixer, at the same the prevention at radio-frequency port of frequency mixer with it is low The waveguide of noise amplifier is connected, and forms a front end, and the signal that low-noise amplifier receives is after amplification, into mixed Frequency device handles signal.In this type of design, three individual circuit cavitys is needed to accommodate low-noise amplifier electricity respectively Road, mixer and local oscillator drive source circuit.There is the of high cost and complexity of loss height, Terahertz receiver in existing structure The defects of high.

Utility model content

Technical problem to be solved in the utility model is that low-noise amplifier, local oscillator driving source and frequency mixer is allowed to be integrated in , and it is an object of the present invention to provide Terahertz minimizes multifunctional unit receiver front end, based on monolithic in same GaAs substrates and cavity Integrated technology, Terahertz frequency range by low-noise amplifier, frequency mixer and local oscillator driving source it is same using GaAs GaAs It is processed in the substrate and cavity of substrate, low noise amplification, frequency multiplication can be achieved at the same time in the Terahertz receiver front end designed Cost and complexity with multiple functions, greatly reduction Terahertz receiver are mixed, realize the small of Terahertz receiver front end Type effectively simplifies circuit design and processing, cost-effective, reduction internal loss.

The utility model is achieved through the following technical solutions：Terahertz minimizes multifunctional unit receiver front end, including Amplifier circuit in low noise, subharmonic mixer circuit, local oscillator drive source circuit and metal cavity, the low-noise amplifier electricity Road and subharmonic mixer circuit are respectively positioned on the GaAs substrates in metal cavity, and the metal cavity includes low-noise amplifier Input cavity, mixer chamber and frequency mixer local oscillator input cavity, low-noise amplifier input cavity is connect with mixer chamber, in mixer chamber Frequency mixer local oscillator input cavity is also vertically crossed on y-axis extension line, the local oscillator in subharmonic mixer circuit in mixer chamber Changeover portion is located at frequency mixer local oscillator input cavity, and the amplifier circuit in low noise is located at low-noise amplifier input cavity, subharmonic Mixer is located in mixer chamber, between amplifier circuit in low noise and subharmonic mixer circuit by co-planar waveguide- Microstrip line transition structure connects, and amplifier circuit in low noise is also connect by direct current supply spun gold with microstrip circuitry；It is described low Noise amplifier circuit includes two pieces of upper strata grounded metals for being arranged on GaAs substrate top surfaces, and two pieces of upper strata grounded metals are located at The both sides of transmission line bridge the more ground-ground air bridges being arranged in parallel between two pieces of upper strata grounded metals, are connect on two pieces of upper stratas Level crosses transmission line, one end connection radio frequency-co-planar waveguide input probe of transmission line between ground metal, and the transmission line other end connects Co-planar waveguide-microstrip line transition structure is connect, multiple transistors are also installed on the transmission line, the grids of multiple transistors passes through same Block transistor gate power pad is powered, and the drain electrode of multiple transistors is powered by same transistor drain power pad, more The source grounding of a transistor, transistor gate power pad and transistor drain power pad pass through direct current supply spun gold It connect, two pieces of upper strata grounded metals of two rows of connections are also uniformly arranged on every piece of upper strata grounded metal and are used for microstrip circuitry Inhibit GaAs substrates plate mode and plate Au Pt via, via is covered with entire upper strata grounded metal；The local oscillator driving source electricity Road is located on the GaAs substrates of local oscillator driving source intracavitary, and local oscillator driving source chamber is vertically mounted on frequency mixer local oscillator input cavity, this The frequency multiplier radio frequency changeover portion to shake in drive source circuit is inserted into frequency mixer local oscillator input cavity, also vertical in local oscillator driving source chamber Frequency multiplier local oscillator input cavity is crossed, the GaAs substrate transverses with local oscillator drive source circuit cross frequency multiplier local oscillator input cavity.

Operation principle：Antenna receives extraneous signal from the low-noise amplifier input cavity on low-noise amplifier Input port enters, and signal is amplified into the prevention at radio-frequency port of subharmonic mixer circuit by low-noise amplifier；Wherein Local oscillation signal enters from the frequency multiplier local oscillator input terminal of frequency multiplier local oscillator input cavity, the letter after local oscillator drive source circuit frequency multiplication The local oscillator port of number frequency mixer local oscillator input cavity entered on sub-harmonic mixer provides local oscillator for frequency mixer and drives, then local oscillator It signal and is exported after sub-harmonic mixer is handled by the amplified signal of low-noise amplifier.Low noise amplification in this programme The input/output port of device uses standard waveguide WR2.2, and frequency mixer prevention at radio-frequency port uses standard waveguide WR2.2, and local oscillator port is adopted With standard waveguide WR5.1, wherein the coplanar waveguide structure of low-noise amplifier can realize that integrated circuit is grounded, can be direct current because Non-equilibrium current caused by the asymmetry of diode pair provides circuit in sub-harmonic mixer, so as to improve the property of frequency mixer Energy；Wherein co-planar waveguide-microstrip line transition structure, which carries out circuit good matching, makes energy preferably transmit.

The operation principle of amplifier circuit in low noise：Radio frequency-co-planar waveguide inputs probe by 340GHz radio frequency electromagnetism couplings Where closing amplifier circuit in low noise on chip, radio frequency-co-planar waveguide input probe and core where amplifier circuit in low noise Piece is integrated on one piece of substrate, the parasitic parameter that gold wire bonding had not only been avoided to bring, but also reduces overall assembling difficulty.Ground-air-ground The upper strata grounded metal of air bridge connection signal main road both sides eliminates the parasitic parameter that Terahertz frequency range is brought；In transistor connection It is lower for ground metal and for inhibit GaAs substrates plate mode and plate Au Pt via, due to Terahertz frequency range height, easily in base Piece forms higher modes, so as to influence the transmission of signal；Upper strata grounded metal provides ground plane for Terahertz chip；GaAs Substrate, compared with InP substrate, the mHEMT technologies on GaAs substrates are less expensive, there is higher crystalline quality, and higher machinery is strong The available GaAs chips of degree and major diameter.Transistor gate power pad, transistor gate is for direct current supply electricity in monoblock chip It route same pad to provide, since direct current pad occupies larger area on chip, so as to reduce polylith pad band The chip area waste come；Transistor drain power pad, transistor drain is for straight in monoblock amplifier circuit in low noise chip Stream power supply circuit is provided by same pad；Direct current supply spun gold, by way of gold wire bonding, by DC power-supply circuit with it is low Noise amplifier circuit chip direct current pad forms electrical connection, and direct current is provided to monoblock amplifier circuit in low noise chip；It is micro- Band line circuit is grid to amplifier circuit in low noise chip by voltage after PCB offer voltage stabilizings using 5880 common substrates Pole and drain pad provide DC voltage；It is defeated to complete chip for the co-planar waveguide being connect with rear class frequency mixer-microstrip line transition structure Go out the co-planar waveguide-microstrip line transition structure inputted to rear class down coversion.

The utility model is based on single slice integration technique, drives low-noise amplifier, frequency mixer and local oscillator in Terahertz frequency range Dynamic source is processed in same substrate and cavity using GaAs GaAs substrate, the Terahertz receiver front end designed Low noise amplification, frequency multiplication and the multiple functions of mixing can be achieved at the same time, greatly reduce the cost and complexity of Terahertz receiver, it is real Show the miniaturization of Terahertz receiver front end, effectively simplify circuit design and processing, cost-effective, reduction internal loss.

Multifunction module is realized in a circuit in this programme cascades the circuit fabrication of composition more compared to existing single module Add the simple, dielectric substrate of needs and cavity numbers less, reduce the volume of multimode circuit, realize circuit miniaturization, Also reduce process chamber and the cost of substrate simultaneously.

The local oscillator drive source circuit includes penetrating using the frequency multiplier that the transmission line of suspension micro-strip form is sequentially connected in series Frequency changeover portion, frequency multiplier single-chip integration diode pair, frequency multiplier local oscillator low-pass filter and frequency multiplier direct current biasing, in frequency multiplier Gold ribbon is also set up between single-chip integration diode pair and frequency multiplier local oscillator low-pass filter, in frequency multiplier single-chip integration diode pair Both ends also set up beam lead, by being vertically set between frequency multiplier direct current biasing and frequency multiplier local oscillator low-pass filter Beam lead connection on GaAs substrates, frequency multiplier single-chip integration diode pair are directly welded on GaAs substrates.Drive signal Entered by frequency multiplier local oscillator port, by frequency multiplier local oscillator low-pass filter, be loaded into frequency multiplier single-chip integration diode pair into Row frequency multiplication, the signal of output provide local oscillator driving source for frequency mixer；Wherein frequency multiplier radio frequency output signal is due to frequency multiplier local oscillator The presence of low-pass filter (logical local frequency, resistance rf frequency) from frequency multiplier local oscillator port without leaking, so as to fulfill this Isolation between two ports；Wherein frequency multiplier DC bias circuit is connect with frequency multiplier circuit by Liang Shi leads in itself, is avoided Jump the human error that spun gold introduces.

Local oscillator drive source circuit uses the Terahertz frequency tripler based on anti-pair diodes, and diode directly welds On gaas substrates, reduce the error of manual assembly.The number of diodes of the type frequency tripler is even number, and input and output are believed It number is coupled by diode pair center, to ensure that each diode bias state is identical, direct current biasing is loaded from diode one end. Reverse parallel connection is presented in input signal in diode pair as a result, is then series connection, while even-order harmonic is in such knot for direct current biasing Virtual circuit is formed under structure, only odd harmonic enters output terminal, the function of inhibiting even-order harmonic is realized, suitable for odd times frequency multiplication Device.

In metal cavity, local oscillator driving source chamber and frequency multiplier local oscillator input cavity are generally aligned in the same plane.It can further reduce The volume of integrated receiver front end.

The line that the circuit that amplifier circuit in low noise and subharmonic mixer circuit are formed is formed with local oscillator drive source circuit Road is mutually parallel.So that the layout of this programme is more compact, beautiful.

Frequency mixer local oscillator input cavity and frequency multiplier local oscillator input cavity are mutually parallel.Convenient for the arrangement of signal input part, into one Step reduces volume.

Preferably, the subharmonic mixer circuit includes the single-chip integration diode being connected in series with along the x-axis direction successively To, local oscillator low-pass filter, local oscillator changeover portion, mid-frequency low-pass wave filter and medium frequency output end mouth, mid-frequency low-pass wave filter includes x Axis transmission line and three longitudinal transmission lines, three longitudinal transmission lines are vertically mounted on successively on x-axis transmission line.

Wherein local oscillation signal enters from the local oscillator port of sub-harmonic mixer, and local oscillator driving is provided for frequency mixer；It is wherein low The coplanar waveguide structure of noise amplifier can realize that integrated circuit is grounded, and can be direct current because of diode pair in sub-harmonic mixer Asymmetry caused by non-equilibrium current provide circuit, so as to improve the performance of frequency mixer；Wherein co-planar waveguide-microstrip line Transition structure, which carries out circuit good matching, makes energy preferably transmit；Wherein local oscillator is transitioning through intermediate-frequency filter and waveguide Structure realizes the input of local oscillation signal and the output of intermediate-freuqncy signal；Wherein medium frequency output end is realized with 50 ohm microstrip impedance lines； Wherein the radio frequency of frequency mixer and local oscillation signal are respectively from frequency mixer co-planar waveguide-microstrip line changeover portion and frequency mixer local oscillator input terminal Mouth feed-in, is loaded on frequency mixer single-chip integration diode pair and is mixed；The intermediate-freuqncy signal warp that wherein diode mixing generates It is exported after local oscillator duplexer by medium frequency output end mouth；Wherein since frequency mixer local oscillation signal frequency is less than frequency mixer prevention at radio-frequency port wave Cutoff frequency is led, so frequency mixer local oscillation signal will not leak at frequency mixer prevention at radio-frequency port；Wherein frequency mixer radiofrequency signal by In frequency mixer local oscillator low-pass filter (logical local frequency, resistance rf frequency) presence without being let out from frequency mixer local oscillator port Leakage, so as to fulfill the isolation between the two ports；Wherein frequency mixer radio frequency and frequency mixer local oscillation signal can be in mixer diode Place recycles to reduce the energy loss in mixing, improves mixing efficiency.Drive signal is entered by frequency multiplier local oscillator port, By frequency multiplier local oscillator low-pass filter, it is loaded into frequency multiplier single-chip integration diode pair and carries out frequency multiplication, the signal of output is mixed Frequency device provides local oscillator driving source；Wherein frequency multiplier radio frequency output signal due to frequency multiplier local oscillator low-pass filter (logical local frequency, Hinder rf frequency) presence without from frequency multiplier local oscillator port leak, so as to fulfill the isolation between the two ports；Wherein again Frequency device DC bias circuit is connect with frequency multiplier circuit by Liang Shi leads in itself, is avoided and is jumped the human error that spun gold introduces.

Preferably, transistor gate power pad and transistor drain power pad are passed through by the way of gold wire bonding Direct current supply spun gold is connect with microstrip circuitry.

Preferably, the bore of the low-noise amplifier input cavity entrance is less than the bore of outlet, the input of frequency mixer local oscillator The bore of chamber entrance is more than the bore of outlet.Convenient electromagnetic wave is in internal preferably transmission.

Preferably, single-chip integration diode pair is reverse parallel connection planer schottky diode pair, is connected to using gold ribbon flat Face Schottky diode is on the suspended mictrostrip of both sides.

Preferably, the length and width of each via is no more than 20 microns.

The utility model compared with prior art, has the following advantages and advantages：

1st, the utility model is based on single slice integration technique, in Terahertz frequency range by low-noise amplifier, frequency mixer and local oscillator Driving source is processed in same substrate and cavity using GaAs GaAs substrate, before the Terahertz receiver designed Low noise amplification, frequency multiplication and the multiple functions of mixing can be achieved at the same time in end, greatly reduce the cost and complexity of Terahertz receiver, The miniaturization of Terahertz receiver front end is realized, effectively simplifies circuit design and processing, cost-effective, reduction internal loss.

2nd, multifunction module realizes the circuit compared to existing single module cascade composition in a circuit in the utility model It processes dielectric substrate that is simpler, needing and cavity numbers is less, reduce the volume of multimode circuit, it is small to realize circuit Type, while also reduce process chamber and the cost of substrate.

3rd, it is connected, avoided by Liang Shi leads between frequency multiplier direct current biasing and local oscillator drive source circuit in the utility model Jump the human error that spun gold introduces.

Description of the drawings

Attached drawing described herein is used for providing further understanding the utility model embodiment, forms the one of the application Part does not form the restriction to the utility model embodiment.In the accompanying drawings：

FIG. 1 is a schematic structural view of the utility model；

Fig. 2 chip structure schematic diagrames where amplifier circuit in low noise；

Fig. 3 is sub-harmonic mixer simulation result；

Fig. 4 is local oscillator drive source circuit structure diagram；

Fig. 5 local oscillator drive source circuit simulation result figures.

Label and corresponding parts title in attached drawing：

1st, low-noise amplifier input cavity；2nd, GaAs substrates；3rd, upper strata grounded metal；4th, via；5th ,-ground air bridges； 6th, transmission line；7th, transistor；8th, direct current supply spun gold；9th, transistor gate power pad；10th, transistor drain power pad； 11st, microstrip circuitry；12nd, co-planar waveguide-microstrip line transition structure；13rd, single-chip integration diode pair；14th, local oscillator low-pass filtering Device；15th, frequency mixer local oscillator input cavity；16th, local oscillator changeover portion；17th, mid-frequency low-pass wave filter；18th, medium frequency output end mouth；19th, it penetrates Frequently-co-planar waveguide input probe；20th, longitudinal transmission line；21st, mixer chamber；22nd, local oscillator driving source chamber；23rd, frequency multiplier monolithic collection Into diode pair；24th, frequency multiplier local oscillator low-pass filter；25th, frequency multiplier direct current biasing；26th, frequency multiplier local oscillator input cavity；27、 Frequency multiplier radio frequency changeover portion；28th, gold ribbon；29th, beam lead.

Specific embodiment

For the purpose of this utility model, technical solution and advantage is more clearly understood, with reference to embodiment and attached drawing, The utility model is described in further detail, and the exemplary embodiment and its explanation of the utility model are only used for explaining this Utility model is not intended to limit the scope of the present invention.

Embodiment 1：

As shown in Figs. 1-5, the utility model includes Terahertz miniaturization multifunctional unit receiver front end, including low noise Amplifier circuit, subharmonic mixer circuit, local oscillator drive source circuit and metal cavity, the amplifier circuit in low noise and point Harmonic mixer circuit is respectively positioned on the GaAs substrates 2 in metal cavity, and the metal cavity is inputted including low-noise amplifier Chamber 1, mixer chamber 21 and frequency mixer local oscillator input cavity 15, low-noise amplifier input cavity 1 is connect with mixer chamber 21, is being mixed Frequency mixer local oscillator input cavity 15 is also vertically crossed on device chamber 21y axis extension lines, the sub-harmonic mixer electricity in mixer chamber 21 The local oscillator changeover portion 16 of road is located at frequency mixer local oscillator input cavity 15, and the amplifier circuit in low noise is located at low-noise amplifier Input cavity 1, subharmonic mixer circuit is located in mixer chamber, between amplifier circuit in low noise and subharmonic mixer circuit It is connected by co-planar waveguide-microstrip line transition structure 12, amplifier circuit in low noise also passes through direct current supply spun gold 8 and microstrip line Circuit 11 connects；The amplifier circuit in low noise includes two pieces of upper strata grounded metals 3 for being arranged on 2 upper surface of GaAs substrates, Two pieces of upper strata grounded metals 3 are located at the both sides of transmission line 6, and more are bridged between two pieces of upper strata grounded metals 3 and is arranged in parallel Ground-ground air bridges 5, level crosses transmission line 6 between two pieces of upper strata grounded metals 3, and one end connection radio frequency of transmission line 6-altogether Surface wave leads input probe 19, and 6 other end of transmission line connection co-planar waveguide-microstrip line transition structure 12 is also installed on transmission line 6 Multiple transistors 7, the grid of multiple transistors 7 are powered by same transistor gate power pad 9, multiple transistors 7 Drain electrode is powered by same transistor drain power pad 10, the source grounding of multiple transistors 7, transistor gate power supply Pad 9 and transistor drain power pad 10 are connect by direct current supply spun gold 8 with microstrip circuitry 11, are connect on every piece of upper strata Also be uniformly arranged on ground metal 3 two pieces of upper strata grounded metals of two rows of connection and for inhibit GaAs substrates plate mode and plate Au The via 4 of Pt, via 4 are covered with entire upper strata grounded metal 3；The local oscillator drive source circuit is located in local oscillator driving source chamber 22 On GaAs substrates, local oscillator driving source chamber 22 is vertically mounted on frequency mixer local oscillator input cavity 15, times in local oscillator drive source circuit Frequency device radio frequency changeover portion 27 is inserted into frequency mixer local oscillator input cavity 15, and frequency multiplier sheet is also vertically crossed in local oscillator driving source chamber 22 Shake input cavity 26, and the GaAs substrate transverses with local oscillator drive source circuit cross frequency multiplier local oscillator input cavity 26.

Operation principle：Antenna receives extraneous signal from the low-noise amplifier input cavity on low-noise amplifier Input port enters, and signal is amplified into the prevention at radio-frequency port of subharmonic mixer circuit by low-noise amplifier；Wherein Local oscillation signal enters from the frequency multiplier local oscillator input terminal of frequency multiplier local oscillator input cavity, the letter after local oscillator drive source circuit frequency multiplication The local oscillator port of number frequency mixer local oscillator input cavity entered on sub-harmonic mixer provides local oscillator for frequency mixer and drives, then local oscillator It signal and is exported after sub-harmonic mixer is handled by the amplified signal of low-noise amplifier.Low noise amplification in this programme The input/output port of device uses standard waveguide WR2.2, and frequency mixer prevention at radio-frequency port uses standard waveguide WR2.2, and local oscillator port is adopted With standard waveguide WR5.1, wherein the coplanar waveguide structure of low-noise amplifier can realize that integrated circuit is grounded, can be direct current because Non-equilibrium current caused by the asymmetry of diode pair provides circuit in sub-harmonic mixer, so as to improve the property of frequency mixer Energy；Wherein co-planar waveguide-microstrip line transition structure, which carries out circuit good matching, makes energy preferably transmit.

The operation principle of amplifier circuit in low noise：Antenna is received extraneous letter by radio frequency-co-planar waveguide input probe Where number being electromagnetically coupled to amplifier circuit in low noise on chip, radio frequency-co-planar waveguide input probe and low-noise amplifier electricity Integrated chip where road is on one piece of substrate, parasitic parameter that gold wire bonding had not only been avoided to bring, but also reduces overall assembling difficulty. The upper strata grounded metal of ground-ground air bridges connection signal main road both sides eliminates the parasitic parameter that Terahertz frequency range is brought；Transistor Connection up and down for ground metal and for inhibit GaAs substrates plate mode and plate Au Pt via, due to Terahertz frequency range height, hold Higher modes easily are formed in substrate, so as to influence the transmission of signal；It is flat to provide ground connection for Terahertz chip for upper strata grounded metal Face；GaAs substrates, compared with InP substrate, the mHEMT technologies on GaAs substrates are less expensive, there is higher crystalline quality, higher The available GaAs chips of mechanical strength and major diameter.Transistor gate power pad, transistor gate supplies direct current in monoblock chip Power supply circuit is provided by same pad, since direct current pad occupies larger area on chip, so as to reduce polylith The chip area waste that pad is brought；Transistor drain power pad, transistor leaks in monoblock amplifier circuit in low noise chip Pole is provided for DC power-supply circuit by same pad；Direct current supply spun gold, by way of gold wire bonding, by direct current supply electricity Road forms with amplifier circuit in low noise chip direct current pad and is electrically connected, and is provided to monoblock amplifier circuit in low noise chip straight Stream；Microstrip circuitry using 5880 common substrates, by voltage after PCB offer voltage stabilizings, gives amplifier circuit in low noise chip DC voltage is provided for grid and drain pad；The co-planar waveguide being connect with rear class frequency mixer-microstrip line transition structure completes core Piece is output to co-planar waveguide-microstrip line transition structure of rear class down coversion input.

The utility model is based on single slice integration technique, drives low-noise amplifier, frequency mixer and local oscillator in Terahertz frequency range Dynamic source is processed in same substrate and cavity using GaAs GaAs substrate, the Terahertz receiver front end designed Low noise amplification, frequency multiplication and the multiple functions of mixing can be achieved at the same time, greatly reduce the cost and complexity of Terahertz receiver, it is real Show the miniaturization of Terahertz receiver front end, effectively simplify circuit design and processing, cost-effective, reduction internal loss.

Multifunction module is realized in a circuit in this programme cascades the circuit fabrication of composition more compared to existing single module Add the simple, dielectric substrate of needs and cavity numbers less, reduce the volume of multimode circuit, realize circuit miniaturization, Also reduce process chamber and the cost of substrate simultaneously.

Embodiment 2：

The present embodiment is preferably as follows on the basis of embodiment 1：The local oscillator drive source circuit is included using suspension micro-strip Frequency multiplier radio frequency changeover portion 27 that the transmission line of form is sequentially connected in series, frequency multiplier single-chip integration diode pair 23, frequency multiplier Local oscillator low-pass filter 24 and frequency multiplier direct current biasing 25, in frequency multiplier single-chip integration diode pair 23 and frequency multiplier local oscillator low pass Gold ribbon 28 is also set up between wave filter 24, beam lead 29 is also set up at the both ends of frequency multiplier single-chip integration diode pair 23, Drawn between frequency multiplier direct current biasing 25 and frequency multiplier local oscillator low-pass filter 24 by the beam type being vertically arranged on gaas substrates Line 29 connects, and frequency multiplier single-chip integration diode pair 23 is directly welded on GaAs substrates.Drive signal is by frequency multiplier local oscillator end Mouth enters, and by frequency multiplier local oscillator low-pass filter, is loaded into frequency multiplier single-chip integration diode pair and carries out frequency multiplication, the letter of output Number provide local oscillator driving source for frequency mixer；Wherein frequency multiplier radio frequency output signal is due to frequency multiplier local oscillator low-pass filter (logical sheet Vibration frequency, resistance rf frequency) presence without from frequency multiplier local oscillator port leak, so as to fulfill between the two ports every From；Wherein frequency multiplier DC bias circuit is connect with frequency multiplier circuit by Liang Shi leads in itself, is avoided and is jumped the people that spun gold introduces Work error.

Local oscillator drive source circuit uses the Terahertz frequency tripler based on anti-pair diodes, and diode directly welds On gaas substrates, reduce the error of manual assembly, circuit is as shown in Figure 4.The number of diodes of the type frequency tripler For even number, input/output signal is coupled by diode pair center, to ensure that each diode bias state is identical, direct current biasing It is loaded from diode one end.Reverse parallel connection is presented in input signal in diode pair as a result, is then series connection for direct current biasing, together When even-order harmonic form virtual circuit under such structure, only odd harmonic enters output terminal, realizes and inhibits even-order harmonic Function, suitable for odd times frequency multiplier.

For ease of mounting plane diode and the functions such as filtering, matching are realized, frequently with circuit base in Terahertz frequency multiplier Piece accesses the transmission line form of frequency multiplier separated structure as transmission line, generally has micro-strip, co-planar waveguide in Terahertz frequency range With suspending three kinds of forms of micro-strip.Compared to the microstrip line form of back-side ground, the suspension micro-strip of this programme use is simultaneously no ground, Electric field is dissipated by microstrip substrate to shielding box around, and electric field is concentrated mainly in air rather than dielectric substrate, can effectively subtract Energy loss on few transmission line；And compared to co-planar waveguide for, the circuit structure for suspending micro-strip is relatively easy, without side The structure of ground connection is easy to make, and especially reduces in Terahertz high band circuit size, and simple circuit structure is effectively increased circuit Reliability.Such as the simulation result figure that Fig. 5 is frequency tripler.The result is that the emulation knot that input power obtains when being 20dBm in figure Fruit is schemed.Output power is more than 5mw in the range of 175GHz-210GHz, by test result it is found that the program reduces on transmission line Energy loss, increase the reliability of circuit.

In metal cavity, local oscillator driving source chamber 22 and frequency multiplier local oscillator input cavity 26 are generally aligned in the same plane.It can be further Reduce the volume of integrated receiver front end.

The line that the circuit that amplifier circuit in low noise and subharmonic mixer circuit are formed is formed with local oscillator drive source circuit Road is mutually parallel.So that the layout of this programme is more compact, beautiful.

Frequency mixer local oscillator input cavity 15 and frequency multiplier local oscillator input cavity 26 are mutually parallel.Convenient for the arrangement of signal input part, Further reduce volume.

It is low that subharmonic mixer circuit includes the single-chip integration diode pair 13 being connected in series with along the x-axis direction successively, local oscillator Bandpass filter 14, local oscillator changeover portion 16, mid-frequency low-pass wave filter 17 and medium frequency output end mouth 18, mid-frequency low-pass wave filter 17 include X-axis transmission line and three longitudinal transmission lines 20, three longitudinal transmission lines 20 are vertically mounted on successively on x-axis transmission line.

Mainstream circuit structure of the sub-harmonic mixer based on planar package Schottky diode pair and microstrip line, passive circuit By prevention at radio-frequency port transition, diode pair threedimensional model, local oscillator intermediate frequency duplex (including the transition of local oscillator port, local oscillator low-pass filtering and Mid-frequency low-pass filtering output) three parts composition, radio frequency and local oscillation signal are transferred to micro-strip respectively from respective port feed-in through transition Line is simultaneously loaded into mixer diode to upper after corresponding matching network, since local oscillation signal frequency is less than prevention at radio-frequency port waveguide cut-off Frequency, so local oscillation signal will not leak at prevention at radio-frequency port, and radiofrequency signal is due to local oscillator low-pass filter (logical local oscillator frequency Rate, resistance rf frequency) presence without from local oscillator port leak, so as to fulfill the isolation between the two ports；Mixing generates Intermediate-freuqncy signal exported from local oscillator end by a Microstrip Low-Pass.Pass through contact of the micro-strip band with cavity in radio-frequency head Realize system earth.Planer schottky diode pair and suspended mictrostrip are integrated in the same arsenic that thickness is 12um by circuit On gallium substrate, the size of mixting circuit had both been reduced in this way, in turn avoided the error brought during manual assembly diode pair.Radio frequency Signal is provided by mHEMT low noise chip (LNA TMIC), and local oscillator intermediate frequency duplex is (including the transition of local oscillator port, local oscillator low pass Wave filter and mid-frequency low-pass wave filter) it exports and access is provided for local oscillator input and intermediate frequency, radio frequency and local oscillation signal are respectively by each From between the matching network between diode pipe pair is loaded into diode, diode pair uses reverse parallel connection form, local oscillator Even-order harmonic generates intermediate-freuqncy signal with radio frequency fundamental wave mixing, is exported by high low-impedance line low-pass filter, leaks into this center of percussion The local oscillator fundamental signal of frequency duplex, which is then reflected back toward, to be received diode pair and continues to be mixed, so as to improve conversion loss.

Wherein local oscillation signal enters from the local oscillator port of sub-harmonic mixer, and local oscillator driving is provided for frequency mixer；It is wherein low The coplanar waveguide structure of noise amplifier can realize that integrated circuit is grounded, and can be direct current because of diode pair in sub-harmonic mixer Asymmetry caused by non-equilibrium current provide circuit, so as to improve the performance of frequency mixer；Wherein co-planar waveguide-microstrip line Transition structure, which carries out circuit good matching, makes energy preferably transmit；Wherein local oscillator is transitioning through intermediate-frequency filter and waveguide Structure realizes the input of local oscillation signal and the output of intermediate-freuqncy signal；Wherein medium frequency output end is realized with 50 ohm microstrip impedance lines； Wherein the radio frequency of frequency mixer and local oscillation signal are respectively from frequency mixer co-planar waveguide-microstrip line changeover portion and frequency mixer local oscillator input terminal Mouth feed-in, is loaded on frequency mixer single-chip integration diode pair and is mixed；The intermediate-freuqncy signal warp that wherein diode mixing generates It is exported after local oscillator duplexer by medium frequency output end mouth；Wherein since frequency mixer local oscillation signal frequency is less than frequency mixer prevention at radio-frequency port wave Cutoff frequency is led, so frequency mixer local oscillation signal will not leak at frequency mixer prevention at radio-frequency port；Wherein frequency mixer radiofrequency signal by In frequency mixer local oscillator low-pass filter (logical local frequency, resistance rf frequency) presence without being let out from frequency mixer local oscillator port Leakage, so as to fulfill the isolation between the two ports；Wherein frequency mixer radio frequency and frequency mixer local oscillation signal can be in mixer diode Place recycles to reduce the energy loss in mixing, improves mixing efficiency.Drive signal is entered by frequency multiplier local oscillator port, By frequency multiplier local oscillator low-pass filter, it is loaded into frequency multiplier single-chip integration diode pair and carries out frequency multiplication, the signal of output is mixed Frequency device provides local oscillator driving source；Wherein frequency multiplier radio frequency output signal due to frequency multiplier local oscillator low-pass filter (logical local frequency, Hinder rf frequency) presence without from frequency multiplier local oscillator port leak, so as to fulfill the isolation between the two ports；Wherein again Frequency device DC bias circuit is connect with frequency multiplier circuit by Liang Shi leads in itself, is avoided and is jumped the human error that spun gold introduces.

As shown in figure 3, the Three-Dimensional Electromagnetic Model of planer schottky diode pair is established in HFSS and is connected to gold ribbon On suspended mictrostrip.Planer schottky diode to be harmonic mixer critical component, performance directly affects frequency mixer It realizes, therefore to Schottky diode to being necessary through row Accurate Model.To make frequency mixer emulation closer practical, It needs to establish the Three-Dimensional Electromagnetic Model of planer schottky diode pair in HFSS and establishes corresponding microstrip line construction.In HFSS Radio frequency transition, diode pair, local oscillator duplexer are designed in electromagnetic simulation software and emulates and simulation result is converted into SNP File is simultaneously imported in ADS, and harmonic mixer integrated circuit is established in ADS schematic diagrams, and it is as shown in Figure 3 can to obtain simulation result.Figure In the result is that fixed intermediate frequency output for 3GHz, simulation result that local oscillation power obtains when being 6dBm.Conversion loss is in 392GHz- It is less than 8dB in the range of 446GHz, minimum conversion loss is 6.83dB in 408GHz.By the structure it is found that the program causes more work( Unnecessary transmission loss is less inside energy circuit, reduces corresponding match circuit and connection substrate, module is made to be easier to set Meter.

Embodiment 3：

The present embodiment is limited as follows in the technology of above-described embodiment：Amplifier circuit in low noise uses CPW co-planar waveguides Structure.That is ground-signal-ground structure, substrate through-hole is for connecting CPW coplanar waveguide structures top ground and Bottom ground, with suppression Parasitic substrate pattern processed.

Chip part where the amplifier circuit in low noise is located on the pedestal of encapsulation waveguide.Pedestal is as low noise The support construction of amplifier chip, at the same it is reversely short-circuit to radiofrequency signal, so as to ensure input/output port high-isolation so that Radiofrequency signal passes through probe coupled RF signal.

Amplifier circuit in low noise and subharmonic mixer circuit are integrated on gaas substrates using mHEMT techniques.With InP Substrate is compared, and the mHEMT technologies on GaAs substrates are less expensive, there is higher crystalline quality, higher mechanical strength and major diameter Available GaAs chips.

Transistor gate power pad 9 and transistor drain power pad 10 pass through direct current by the way of gold wire bonding Power supply spun gold 8 is connect with microstrip circuitry 11.It powers more stable and reliable.

The bore of 1 entrance of low-noise amplifier input cavity is less than the bore of outlet, 15 entrance of frequency mixer local oscillator input cavity Bore is more than the bore of outlet.Convenient electromagnetic wave is in internal preferably transmission.

Single-chip integration diode pair 13 is reverse parallel connection planer schottky diode pair, and plane Xiao Te is connected to using gold ribbon Based diode is on the suspended mictrostrip of both sides.

Transistor 7 is InP mHEMT transistors.I.e. rotten high electron mobility transistor.

The length and width of each via 4 is no more than 20 microns.Due to Terahertz frequency range height, easily in GaAs substrate shapes Into higher modes, so as to influence the transmission of signal, and the setting of via can get rid of the higher hamonic wave of GaAs substrates formation, letter Number transmission is more stable, and the quantity of via setting is more, and the area of via is smaller, and the effect for inhibiting higher hamonic wave is better.

Above-described specific embodiment, the purpose of this utility model, technical solution and advantageous effect have been carried out into One step is described in detail, it should be understood that the foregoing is merely specific embodiment of the present utility model, is not used to limit Determine the scope of protection of the utility model, within the spirit and principle of the utility model, any modification for being made equally is replaced It changes, improve, should be included within the scope of protection of this utility model.

Claims (10)

1. Terahertz minimizes multifunctional unit receiver front end, which is characterized in that including amplifier circuit in low noise, subharmonic Mixer, local oscillator drive source circuit and metal cavity, the amplifier circuit in low noise and subharmonic mixer circuit are equal On GaAs substrates (2) in metal cavity, the metal cavity includes low-noise amplifier input cavity (1), mixer chamber (21) and frequency mixer local oscillator input cavity (15), low-noise amplifier input cavity (1) is connect with mixer chamber (21), in mixer chamber (21) frequency mixer local oscillator input cavity (15) is also vertically crossed on y-axis extension line, the sub-harmonic mixer in mixer chamber (21) For local oscillator changeover portion (16) on circuit positioned at frequency mixer local oscillator input cavity (15), the amplifier circuit in low noise is located at low noise Amplifier input cavity (1), subharmonic mixer circuit are located in mixer chamber, amplifier circuit in low noise and sub-harmonic mixer It is connected between circuit by co-planar waveguide-microstrip line transition structure (12), amplifier circuit in low noise also passes through direct current supply gold Silk (8) is connect with microstrip circuitry (11)；The amplifier circuit in low noise is arranged on GaAs substrates (2) upper surface including two pieces Upper strata grounded metal (3), two pieces of upper strata grounded metals (3) are positioned at the both sides of transmission line (6), in two pieces of upper strata grounded metals (3) the more ground-ground air bridges (5) being arranged in parallel are bridged between, level crosses transmission between two pieces of upper strata grounded metals (3) Line (6), one end connection radio frequency-co-planar waveguide input probe (19) of transmission line (6), transmission line (6) other end connect coplanar wave - microstrip line transition structure (12) is led, multiple transistors (7) are also installed on transmission line (6), the grid of multiple transistors (7) leads to Same transistor gate power pad (9) power supply is crossed, the drain electrode of multiple transistors (7) is powered by same transistor drain Pad (10) is powered, the source grounding of multiple transistors (7), transistor gate power pad (9) and transistor drain power supply Pad (10) is connect by direct current supply spun gold (8) with microstrip circuitry (11), also equal on every piece of upper strata grounded metal (3) Even setting two pieces of upper strata grounded metals of two rows of connection and for inhibit GaAs substrates plate mode and plate Au Pt via (4), mistake Hole (4) is covered with entire upper strata grounded metal (3)；The local oscillator drive source circuit is located at the GaAs linings in local oscillator driving source chamber (22) On bottom, local oscillator driving source chamber (22) is vertically mounted on frequency mixer local oscillator input cavity (15), the frequency multiplication in local oscillator drive source circuit Device radio frequency changeover portion (27) is inserted into frequency mixer local oscillator input cavity (15), and frequency multiplication is also vertically crossed in local oscillator driving source chamber (22) Device local oscillator input cavity (26), the GaAs substrate transverses with local oscillator drive source circuit cross frequency multiplier local oscillator input cavity (26).

2. Terahertz according to claim 1 minimizes multifunctional unit receiver front end, which is characterized in that the local oscillator Drive source circuit includes the frequency multiplier radio frequency changeover portion (27) that the transmission line of suspension micro-strip form is used to be sequentially connected in series, frequency multiplication Device single-chip integration diode pair (23), frequency multiplier local oscillator low-pass filter (24) and frequency multiplier direct current biasing (25), in frequency multiplier Gold ribbon (28) is also set up between single-chip integration diode pair (23) and frequency multiplier local oscillator low-pass filter (24), in frequency multiplier monolithic Integrated diode also sets up the both ends of (23) beam lead (29), in frequency multiplier direct current biasing (25) and frequency multiplier local oscillator low pass It is connected between wave filter (24) by the beam lead (29) being vertically arranged on gaas substrates, frequency multiplier single-chip integration diode (23) are directly welded on GaAs substrates.

3. Terahertz according to claim 1 minimizes multifunctional unit receiver front end, which is characterized in that wire chamber In body, local oscillator driving source chamber (22) and frequency multiplier local oscillator input cavity (26) are generally aligned in the same plane.

4. Terahertz according to claim 3 minimizes multifunctional unit receiver front end, which is characterized in that low noise is put The circuit that the circuit that big device circuit and subharmonic mixer circuit are formed is formed with local oscillator drive source circuit is mutually parallel.

5. Terahertz according to claim 3 minimizes multifunctional unit receiver front end, which is characterized in that frequency mixer sheet It shakes input cavity (15) and frequency multiplier local oscillator input cavity (26) is mutually parallel.

6. Terahertz according to claim 1 or 2 minimizes multifunctional unit receiver front end, which is characterized in that described Subharmonic mixer circuit includes the single-chip integration diode pair (13) being connected in series with along the x-axis direction successively, local oscillator low-pass filtering Device (14), local oscillator changeover portion (16), mid-frequency low-pass wave filter (17) and medium frequency output end mouth (18), mid-frequency low-pass wave filter (17) Including x-axis transmission line and three longitudinal transmission lines (20), three longitudinal transmission lines (20) are vertically mounted on x-axis transmission line successively On.

7. Terahertz according to claim 1 minimizes multifunctional unit receiver front end, which is characterized in that transistor gate Pole power pad (9) and transistor drain power pad (10) pass through direct current supply spun gold (8) by the way of gold wire bonding It is connect with microstrip circuitry (11).

8. Terahertz according to claim 1 minimizes multifunctional unit receiver front end, which is characterized in that the low noise The bore of acoustic amplifier input cavity (1) entrance is less than the bore of outlet, and the bore of frequency mixer local oscillator input cavity (15) entrance is more than The bore of outlet.

9. Terahertz according to claim 2 minimizes multifunctional unit receiver front end, which is characterized in that single-chip integration Diode pair (13) is reverse parallel connection planer schottky diode pair, and planer schottky diode is connected to both sides using gold ribbon Suspended mictrostrip on.

10. Terahertz according to claim 1 minimizes multifunctional unit receiver front end, which is characterized in that each mistake The length and width in hole (4) is no more than 20 microns.