CN207543072U - A kind of S-band amplifier circuit - Google Patents
A kind of S-band amplifier circuit Download PDFInfo
- Publication number
- CN207543072U CN207543072U CN201721266435.6U CN201721266435U CN207543072U CN 207543072 U CN207543072 U CN 207543072U CN 201721266435 U CN201721266435 U CN 201721266435U CN 207543072 U CN207543072 U CN 207543072U
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- Prior art keywords
- amplifier
- attenuator
- band
- order
- circuit
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Abstract
The utility model discloses a kind of S-band amplifier circuits, including first order amplifier, second level amplifier, the second attenuator, third attenuator, isolator, input signal is sent to the input terminal of first order amplifier, the first order amplifier is connect through the second attenuator with second level amplifier, and the second level amplifier is connected through the input terminal of third attenuator and isolator.The utility model has the advantage of：The circuit has continuous power output and a larger increase in S-band, apply has the advantages that power big, high gain, output standing wave, harmonics restraint be good, strong antijamming capability in S-band, it is and simple in structure, it is convenient to realize, there is temperature-compensating the stability of amplifying circuit and reliability to be caused to obtain significantly being promoted.
Description
Technical field
The utility model is related to amplifying circuit field, more particularly to a kind of S-band amplifier circuit.
Background technology
With the fast development of wireless communication, S-band amplifier circuit is obtained for increasingly wider in radar every field
General application, for example emit in link in radar just can amplify smaller signal using 6 watts of continuous wave amplifier circuits of S-band
Grade is pushed as radar emission channel into larger signal, to improve the power of entire radar emission link and gain；Having
In the phased array radar system of source, 6 watts of continuous wave amplifier circuits of S-band are the important compositions of TR components in Connectors for Active Phased Array Radar
Unit.The S-band amplifier circuit gain of the prior art is smaller or does not reach requirement and stability is bad.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of S-band amplifier circuit, the circuit
Can continuous power output and the big stability of gain it is good.
To achieve these goals, the technical solution adopted in the utility model is：A kind of S-band amplifier circuit, including
First order amplifier, second level amplifier, the second attenuator, third attenuator, isolator, input signal are sent to the first order and put
The input terminal of big device, the first order amplifier are connect through the second attenuator with second level amplifier, and the second level is put
Big device is connected through the input terminal of third attenuator and isolator.
The concatenated filter between third attenuator and isolator.
The first attenuator is concatenated between input signal and first order amplifier.
First attenuator includes π types attenuator and temperature compensation attenuator, and the input signal passes through π successively
First order amplifier is sent to after type attenuator, temperature compensation attenuator.
First attenuator, the second attenuator are π type attenuators.
The first order amplifier, second level amplifier are formed by being integrated in gallium arsenide chips amplifying circuit.The
Level-one and second level amplifier are formed by being integrated in gallium arsenide chips amplifying circuit, using it in S-band high-gain and defeated
Go out the big performance of power, the plus and blowup and high-power output of this circuit can be well realized.
The utility model has the advantage of：The circuit has continuous power output and a larger increase in S-band, applies
S-band has the advantages that power big, high gain, output standing wave, harmonics restraint be good, strong antijamming capability, and simple in structure, real
Now facilitate, there is temperature-compensating the stability of amplifying circuit and reliability to be caused to obtain significantly being promoted.
Description of the drawings
Label in each width attached drawing is expressed to the utility model specification below content and figure is briefly described：
Fig. 1 is the utility model amplifier circuit diagram.
Label in above-mentioned figure is：1st, the first attenuator；2nd, first order amplifier；3rd, the second attenuator；4th, the second level
Amplifier；5th, third attenuator；6th, wave filter；7th, isolator；8th, temperature compensation attenuator.
Specific embodiment
Below against attached drawing, by the description to optimum embodiment, specific embodiment of the present utility model is made into one
Step detailed description.
As shown in Figure 1, a kind of S-band amplifier circuit, including first order amplifier, second level amplifier, the second attenuation
Device, third attenuator, isolator, input signal are sent to the input terminal of first order amplifier, and first order amplifier declines through second
Subtract device to connect with second level amplifier, second level amplifier through the input terminal of third attenuator and isolator connect.Input letter
Number IN provides big gain through first order amplifier, and the first attenuator, the second attenuator are using π type attenuators, for preventing work(
Rate supersaturation, first order amplifier, second level amplifier can be increased using its high-gain performance in S-band in S-band
Gain and output power.Isolator can be used for playing the role of insulation blocking.The output terminal OUT output signals of isolator are
Amplified signal.Isolator is with isolation features, and appearance and size is small, and has the pad being easily assembled, and convenient for assembling, is used
In S-band, output standing wave is small, and stability is good.The first order and second level amplifier are by being integrated in gallium arsenide chips amplification electricity
Road is formed, so as to improve gain of the input signal in S-band.
Wave filter concatenation is arranged on third attenuator and between isolator, plays the role of filtering, filters out interference, improves
Circuit anti-interference ability.The first attenuator is arranged in series between input signal and the first amplifier, the first attenuator includes π types
Attenuator and temperature compensation attenuator, main function are that changed power of the amplifier in high/low temperature is compensated, and are reached in band
The characteristics of flatness is good.
In the present embodiment, the signal transitive relation of S-band amplifier circuit is：Input signal is sent to π type attenuators
Input terminal, the output terminal output signal of π type attenuators is sent to the input terminal of temperature compensation attenuator, temperature compensation attenuator
Output terminal output signal be sent to first order amplifier, first order amplifier output signal is sent to second through the second attenuator
The input terminal of grade amplifier, the output terminal output signal of second level amplifier are sent to isolation after third attenuator, wave filter
The input terminal of device, the output terminal of isolator export amplified signal.
First order amplifier provides big gain for the S-band signal inputted, effectively prominent in S-band high gain characteristics；
Second level amplifier effect is to continue with the gain of increase output S-band signal and output power is made to reach required power, effectively
It is embodied in S-band output high power characteristics；Temperature compensation attenuator main function is that changed power of the amplifier in high/low temperature is carried out
Compensation reaches the characteristics of inband flatness is good, and output end filter eliminates interference signal, makes the anti-interference of product can ability change
By force；Output terminal adds isolator that its standing wave is made to be less than 1.2.
The signal flow of amplifier circuit：S-band signal is inputted from IN ports, by π types attenuator and temperature compensation attenuator,
Temperature-compensating is carried out to first order amplifier, second level amplifier, it is defeated that temperature compensation attenuator improves power amplifier under high/low temperature
Go out the stability of power, make its passband fluctuation within 1dB.First order amplifying circuit is a signal amplification network, in ideal
Matching network in, gain can reach desirable value, and signal amplifier uses GaAs material, and the first order and second level amplifier are equal
It is to be formed by being integrated in gallium arsenide chips amplifying circuit, so as to improve gain of the input signal in S-band；After first order amplification
Signal be added to second level amplifier circuit by π type attenuators from first order amplifier, it is defeated after the amplifier of the second level
The gain for going out signal is further magnified, and output power is made to be more than setting value, it is achieved thereby that the high-gain of this circuit structure
High-power effect；The signal loading that the second level is amplified exports using isolator signal to wave filter, improves entire circuit
Standing wave is exported, output standing wave is less than 1.2.
Gain caused by the present embodiment amplifier solves the circuit formed merely with first stage amplifier characteristic is low, output work
The problem of rate is low, compared with prior art, the beneficial effects of the utility model are that the circuit increases circuit gain amplifier, carries
High output power, improves output circuit standing wave, improves inband flatness so that the performance of circuit has obtained further carrying
Height, the stability and reliability for making product are significantly risen.
Obvious the utility model specific implementation is not subject to the restrictions described above, as long as employing the methodology of the present invention
The improvement of the various unsubstantialities carried out with technical solution, within protection scope of the present invention.
Claims (6)
1. a kind of S-band amplifier circuit, it is characterised in that：Including first order amplifier (2), second level amplifier (4), second
Attenuator (3), third attenuator (5), isolator (7), input signal is sent to the input terminal of first order amplifier (2), described
First order amplifier (2) connect through the second attenuator (3) with second level amplifier (4), the second level amplifier (4) warp
Third attenuator (5) is connect with the input terminal of isolator (7).
2. a kind of S-band amplifier circuit as described in claim 1, it is characterised in that：In third attenuator (5) and isolator
(7) concatenated filter (6) between.
3. a kind of S-band amplifier circuit as claimed in claim 1 or 2, it is characterised in that：It is put in input signal and the first order
The first attenuator (1) is concatenated between big device (2).
4. a kind of S-band amplifier circuit as claimed in claim 3, it is characterised in that：First attenuator (1) includes
π types attenuator and temperature compensation attenuator (8), the input signal is successively by π types attenuator, temperature compensation attenuator
(8) first order amplifier (2) is sent to after.
5. a kind of S-band amplifier circuit as claimed in claim 3, it is characterised in that：First attenuator (1),
Two attenuators (3) are π type attenuators.
6. a kind of S-band amplifier circuit as claimed in claim 3, it is characterised in that：The first order amplifier (2),
Second level amplifier (4) is made of the amplifying circuit for being integrated in gallium arsenide chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721266435.6U CN207543072U (en) | 2017-09-29 | 2017-09-29 | A kind of S-band amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721266435.6U CN207543072U (en) | 2017-09-29 | 2017-09-29 | A kind of S-band amplifier circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207543072U true CN207543072U (en) | 2018-06-26 |
Family
ID=62609874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721266435.6U Expired - Fee Related CN207543072U (en) | 2017-09-29 | 2017-09-29 | A kind of S-band amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207543072U (en) |
-
2017
- 2017-09-29 CN CN201721266435.6U patent/CN207543072U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190425 Address after: 241000 Emshan Road, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Two High-tech Industrial Development Zones in Yijiang District, Wuhu City, Anhui Province Patentee before: ANHUI EAST CHINA PHOTOELECTRIC INDUSTRY RESEARCH INSTITUTE CO.,LTD. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180626 Termination date: 20210929 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |