CN103079292B - A kind of high-performance radio-frequency passage of TDD LTE tower amplifier - Google Patents

A kind of high-performance radio-frequency passage of TDD LTE tower amplifier Download PDF

Info

Publication number
CN103079292B
CN103079292B CN201210586481.XA CN201210586481A CN103079292B CN 103079292 B CN103079292 B CN 103079292B CN 201210586481 A CN201210586481 A CN 201210586481A CN 103079292 B CN103079292 B CN 103079292B
Authority
CN
China
Prior art keywords
speed
filter
ant
sensitive switch
receive path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210586481.XA
Other languages
Chinese (zh)
Other versions
CN103079292A (en
Inventor
周为
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Tiger Microwave Technology Co Ltd
Original Assignee
Chengdu Tiger Microwave Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Tiger Microwave Technology Co Ltd filed Critical Chengdu Tiger Microwave Technology Co Ltd
Priority to CN201210586481.XA priority Critical patent/CN103079292B/en
Priority to PCT/CN2013/071596 priority patent/WO2014101340A1/en
Priority to EA201591210A priority patent/EA201591210A1/en
Publication of CN103079292A publication Critical patent/CN103079292A/en
Application granted granted Critical
Publication of CN103079292B publication Critical patent/CN103079292B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

The invention discloses a kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, described receive path comprises ANT filter, low noise amplifier LNA and RX path filter, it also comprises a bypass channel, and described bypass channel comprises two λ/4 microstrip lines and ANT filter.The present invention can bear high power, has filter with low insertion loss and low-noise characteristic, can ensure to guarantee that base station communication does not interrupt when power down and amplifier failures with alap Insertion Loss.

Description

A kind of high-performance radio-frequency passage of TDD LTE tower amplifier
Technical field
The present invention relates to a kind of high-performance radio-frequency passage of TDD LTE tower amplifier.
Background technology
TD-LTE and Time Division Long Term Evolution is the 4G communication technology of a new generation, the feature of TD-LTE a new generation communication technology is: operating frequency is higher, transmission speed is faster, the amount of information of carrying is larger, requirement equipment is more exquisite, reliability is higher, require better Internet phone-calling quality, these all propose harsher technical requirement to device supplier.
Tower amplifier is called for short tower to be put or TMA(Tower Mounted Amplifier), the tower top that its purposes is to provide closest to antenna receives amplification.Received signal strength amplifies the feeder loss that compensate for from antenna to base station, thus improves the receiving sensitivity of base station.And usual tower puts very low noise factor, the noise factor of base station is had and further improves.Tower is put to be needed to support bypass functionality, unimpeded with what guarantee to communicate under abnormality.TDD and Time Division Duplex(time division duplex) the tower up-downgoing of putting uses identical frequency range, and need to put inside at tower and carry out accurate up-downgoing control.
Traditional tower amplifier is all FDD mode.And adopting the 4G communication system TD-LTE of TDD mode just to start to promote in the whole world, TDDLTE tower amplifier a kind of brand-new product especially, because TDD mode brings very high technical requirement to the design that tower is put, does not therefore also have ripe product at present on the market.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art; there is provided one can bear high power, there is filter with low insertion loss and low-noise characteristic, can to ensure when power down and amplifier failures with the descending and upward signal of alap Insertion Loss transmission, the high-performance radio-frequency passage of unbroken a kind of TDD LTE tower amplifier of guaranteeing to communicate between base station with travelling carriage.
The object of the invention is to be achieved through the following technical solutions: a kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 is connected with base station BTS.
Amplifier LNA of the present invention is radio frequency low-noise amplifier.
The present invention it also comprise a bypass channel, described bypass channel comprises two λ/4 microstrip lines and ANT filter, base station BTS is connected with two λ/4 microstrip lines of connecting, and λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT.Because λ/4 microstrip line, ANT filter are passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all PIN switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip line and filter low-loss transmission, and the communication guaranteed is not interrupted.
The invention has the beneficial effects as follows: in transmission channel, utilize the isolation that λ/4 microstrip line and high-power PIN diode realize when accepting state, two PIN diode circuit in parallel are adopted to improve isolation, avoid low noise amplifier LNA self-excitation in receive state, wherein PIN diode circuit adopts two Diode series reversal connections, avoid when emission state and bypass condition, diode current flow under high-power condition; In receive path; the mode of two Diode series reversal connections is adopted to realize Transmit enable; in receive state there is filter with low insertion loss; thus realize low noise factor index; there is high isolation under emission state and bypass condition thus low noise amplifier LNA is protected, can not being punctured by descending high-power RF signal.
Accompanying drawing explanation
Fig. 1 is the transmission channel of principle of the invention figure;
Fig. 2 is the receive path of principle of the invention figure;
Fig. 3 is the bypass channel of principle of the invention figure;
Fig. 4 is the first circuit form of the present invention;
Fig. 5 is the second circuit form of the present invention;
Fig. 6 is the third circuit form of the present invention;
Fig. 7 is the 4th kind of circuit form of the present invention.
Embodiment
Below in conjunction with embodiment, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
A kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3;
As shown in Figure 1, described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3.
As shown in Figure 2, described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, switch S PST2 is connected with base station BTS, and described amplifier LNA is radio frequency low-noise amplifier.
The present invention also comprises a bypass channel, as shown in Figure 3, described bypass channel comprises two λ/4 microstrip lines and ANT filter, and base station BTS is connected with two λ/4 microstrip lines of connecting, λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT.Because λ/4 microstrip line, ANT filter are passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all PIN switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip line and filter low-loss transmission, and the communication guaranteed is not interrupted.
Fig. 4 is one of circuit structure diagram of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 5 is circuit structure diagram two of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1, SPST2 and diode D3, D10, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 6 is circuit structure diagram three of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 7 is circuit structure diagram four of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Present invention employs speed-sensitive switch and amplitude limiter, thus make key technical index reach following effect:
Adopt the TDD LTE tower amplifier in the present invention can realize following key technical index:
Maximumly bear power Average power >=50dBm, peak power >=58dBm
Return loss ≥18dB
TX passage Insertion Loss ≤0.8dB
RX gain 12dB±1dB
RX gain fluctuation ±0.5dB
Noise factor ≤1.8dB@-40-+55℃
Bypass mode Insertion Loss ≤0.8dB
Bypass mode return loss ≥18dB
Switching time ≤1μs
IIP3 ≥12dBm
Input 1dB compression point ≥0dBm
EVM(rms) ≤2.0%,LTE TDD Test model
Operating temperature range -40-+55℃

Claims (2)

1. the high-performance radio-frequency passage of a TDD LTE tower amplifier, it is characterized in that: it comprises transmission channel, receive path, bypass channel and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 is connected with base station BTS; Described bypass channel comprises two λ/4 microstrip lines and ANT filter, and base station BTS is connected with two λ/4 microstrip lines of connecting, and λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT;
When circuit is in emission state, the descending high-power RF signal that base station BTS sends passes through two λ/4 microstrip lines and the ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path;
When circuit is in accepting state, the upward signal that antenna ANT receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation;
When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all speed-sensitive switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
2., according to the high-performance radio-frequency passage of a kind of TDD LTE tower amplifier described in claim 1, it is characterized in that: described amplifier LNA is radio frequency low-noise amplifier.
CN201210586481.XA 2012-12-28 2012-12-28 A kind of high-performance radio-frequency passage of TDD LTE tower amplifier Active CN103079292B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201210586481.XA CN103079292B (en) 2012-12-28 2012-12-28 A kind of high-performance radio-frequency passage of TDD LTE tower amplifier
PCT/CN2013/071596 WO2014101340A1 (en) 2012-12-28 2013-02-09 High-performance radio frequency channel of a tdd lte tower mounted amplifier
EA201591210A EA201591210A1 (en) 2012-12-28 2013-02-09 HIGHLY EFFICIENT RADIO-FREQUENCY CHANNEL OF THE TOWER-INSTALLED TDD LTE AMPLIFIER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210586481.XA CN103079292B (en) 2012-12-28 2012-12-28 A kind of high-performance radio-frequency passage of TDD LTE tower amplifier

Publications (2)

Publication Number Publication Date
CN103079292A CN103079292A (en) 2013-05-01
CN103079292B true CN103079292B (en) 2015-08-26

Family

ID=48155667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210586481.XA Active CN103079292B (en) 2012-12-28 2012-12-28 A kind of high-performance radio-frequency passage of TDD LTE tower amplifier

Country Status (3)

Country Link
CN (1) CN103079292B (en)
EA (1) EA201591210A1 (en)
WO (1) WO2014101340A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108123725B (en) * 2016-11-29 2020-06-16 西安华为技术有限公司 Tower amplifier and method for signal transmission in tower amplifier
IT202000020314A1 (en) * 2020-08-21 2022-02-21 Commscope Italy Srl BYPASSABLE RADIOFREQUENCY FILTERS
US11770164B2 (en) 2020-07-17 2023-09-26 Commscope Italy S.R.L. Bypassable radio frequency filters
WO2023235678A1 (en) * 2022-06-01 2023-12-07 Commscope Technologies Llc Radio frequency feed networks having impedance-matching paths with different impedances, and related methods of operating a base station antenna

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101282127A (en) * 2007-04-06 2008-10-08 中兴通讯股份有限公司 Transmit-receive switching mechanism for TDD radio communication system
CN201726540U (en) * 2010-06-28 2011-01-26 京信通信系统(中国)有限公司 Time division duplex system and tower mounted amplifier based on same
CN202503487U (en) * 2012-02-14 2012-10-24 陈鹏 Signal generator used in experimental teaching of electrical automation specialty

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8670438B2 (en) * 2008-03-31 2014-03-11 Sharp Kabushiki Kaisha Communication system, base station apparatus, and mobile station apparatus
US20100203922A1 (en) * 2009-02-10 2010-08-12 Knecht Thomas A Time Division Duplex Front End Module
CN202374264U (en) * 2011-12-12 2012-08-08 泉州市丰泽华林电子仪器有限公司 TDD-LTE-based miniature repeater
CN102710278A (en) * 2012-06-01 2012-10-03 天津里外科技有限公司 Time division-long term evolution (TD-LTE)/time division-synchronous code division multiple access (TD-SCDMA) radio-frequency front transmitter-receiver system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101282127A (en) * 2007-04-06 2008-10-08 中兴通讯股份有限公司 Transmit-receive switching mechanism for TDD radio communication system
CN201726540U (en) * 2010-06-28 2011-01-26 京信通信系统(中国)有限公司 Time division duplex system and tower mounted amplifier based on same
CN202503487U (en) * 2012-02-14 2012-10-24 陈鹏 Signal generator used in experimental teaching of electrical automation specialty

Also Published As

Publication number Publication date
EA201591210A1 (en) 2016-02-29
WO2014101340A1 (en) 2014-07-03
CN103079292A (en) 2013-05-01

Similar Documents

Publication Publication Date Title
CN101534093B (en) Final three-route power synthesizing amplifying circuit applied to power amplifier of mobile communication base station system
CN103079292B (en) A kind of high-performance radio-frequency passage of TDD LTE tower amplifier
CN101567667B (en) Enhancement type analog predistortion linear power amplifier
CN202872780U (en) Covering apparatus of ultra-wide band distribution system and radio frequency module thereof
US20180226924A1 (en) Multi-power amplification
CN109150229A (en) Control the mobile terminal and tdd systems of the receiving sensitivity of TDD system
CN103095227B (en) Worldwide interoperability for microwave access (WiMAX) radio frequency front end two-way amplifier
CN206413200U (en) A kind of room based on REID point monitoring system
CN103716062A (en) Radio-frequency circuit integrating low-noise amplifier, power amplifier, and antenna switch
CN203968065U (en) A kind of broadband radio frequency amplifies transmitting-receiving subassembly
CN202550967U (en) L-waveband 50W power amplifier
CN108988897B (en) Railway LTE-R wireless communication terminal equipment
CN201523385U (en) Fiber optic repeater compatible with homogeneous frequency mode and heterogeneous frequency mode
CN203984364U (en) There is synchronization and control AGC and the ALC high-gain active circuit assembly of function
CN204168259U (en) A kind of smart antenna multiplexer
CN205212785U (en) Radio -frequency power amplifier
CN201403074Y (en) Enhanced simulating predistortion linearized power amplifier
CN204376835U (en) Adopt the Doherty power amplifier of multistage bypass amplifier
CN2800677Y (en) Bypass apparatus for duplex tower top amplifier of mobile communication system
CN203288755U (en) RoF-type phase control active integrated antenna array suitable for FDD system
CN202269020U (en) CATV (community antenna television) wireless signal distribution system using frequency conversion technology
CN201656970U (en) Tower mounted amplifier
CN204156861U (en) Multi-Carrier basestation power amplifier and multi-carrier base station system
CN205039778U (en) Bilateral amplifier circuit based on TDD mode
CN203104416U (en) High-performance emission channel of TDD LTE (Time Division Duplex Long Term Evolution) tower mounted amplifier

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant