CN103079292B - A kind of high-performance radio-frequency passage of TDD LTE tower amplifier - Google Patents
A kind of high-performance radio-frequency passage of TDD LTE tower amplifier Download PDFInfo
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- CN103079292B CN103079292B CN201210586481.XA CN201210586481A CN103079292B CN 103079292 B CN103079292 B CN 103079292B CN 201210586481 A CN201210586481 A CN 201210586481A CN 103079292 B CN103079292 B CN 103079292B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
Abstract
The invention discloses a kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, described receive path comprises ANT filter, low noise amplifier LNA and RX path filter, it also comprises a bypass channel, and described bypass channel comprises two λ/4 microstrip lines and ANT filter.The present invention can bear high power, has filter with low insertion loss and low-noise characteristic, can ensure to guarantee that base station communication does not interrupt when power down and amplifier failures with alap Insertion Loss.
Description
Technical field
The present invention relates to a kind of high-performance radio-frequency passage of TDD LTE tower amplifier.
Background technology
TD-LTE and Time Division Long Term Evolution is the 4G communication technology of a new generation, the feature of TD-LTE a new generation communication technology is: operating frequency is higher, transmission speed is faster, the amount of information of carrying is larger, requirement equipment is more exquisite, reliability is higher, require better Internet phone-calling quality, these all propose harsher technical requirement to device supplier.
Tower amplifier is called for short tower to be put or TMA(Tower Mounted Amplifier), the tower top that its purposes is to provide closest to antenna receives amplification.Received signal strength amplifies the feeder loss that compensate for from antenna to base station, thus improves the receiving sensitivity of base station.And usual tower puts very low noise factor, the noise factor of base station is had and further improves.Tower is put to be needed to support bypass functionality, unimpeded with what guarantee to communicate under abnormality.TDD and Time Division Duplex(time division duplex) the tower up-downgoing of putting uses identical frequency range, and need to put inside at tower and carry out accurate up-downgoing control.
Traditional tower amplifier is all FDD mode.And adopting the 4G communication system TD-LTE of TDD mode just to start to promote in the whole world, TDDLTE tower amplifier a kind of brand-new product especially, because TDD mode brings very high technical requirement to the design that tower is put, does not therefore also have ripe product at present on the market.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art; there is provided one can bear high power, there is filter with low insertion loss and low-noise characteristic, can to ensure when power down and amplifier failures with the descending and upward signal of alap Insertion Loss transmission, the high-performance radio-frequency passage of unbroken a kind of TDD LTE tower amplifier of guaranteeing to communicate between base station with travelling carriage.
The object of the invention is to be achieved through the following technical solutions: a kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 is connected with base station BTS.
Amplifier LNA of the present invention is radio frequency low-noise amplifier.
The present invention it also comprise a bypass channel, described bypass channel comprises two λ/4 microstrip lines and ANT filter, base station BTS is connected with two λ/4 microstrip lines of connecting, and λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT.Because λ/4 microstrip line, ANT filter are passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all PIN switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip line and filter low-loss transmission, and the communication guaranteed is not interrupted.
The invention has the beneficial effects as follows: in transmission channel, utilize the isolation that λ/4 microstrip line and high-power PIN diode realize when accepting state, two PIN diode circuit in parallel are adopted to improve isolation, avoid low noise amplifier LNA self-excitation in receive state, wherein PIN diode circuit adopts two Diode series reversal connections, avoid when emission state and bypass condition, diode current flow under high-power condition; In receive path; the mode of two Diode series reversal connections is adopted to realize Transmit enable; in receive state there is filter with low insertion loss; thus realize low noise factor index; there is high isolation under emission state and bypass condition thus low noise amplifier LNA is protected, can not being punctured by descending high-power RF signal.
Accompanying drawing explanation
Fig. 1 is the transmission channel of principle of the invention figure;
Fig. 2 is the receive path of principle of the invention figure;
Fig. 3 is the bypass channel of principle of the invention figure;
Fig. 4 is the first circuit form of the present invention;
Fig. 5 is the second circuit form of the present invention;
Fig. 6 is the third circuit form of the present invention;
Fig. 7 is the 4th kind of circuit form of the present invention.
Embodiment
Below in conjunction with embodiment, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
A kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3;
As shown in Figure 1, described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3.
As shown in Figure 2, described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, switch S PST2 is connected with base station BTS, and described amplifier LNA is radio frequency low-noise amplifier.
The present invention also comprises a bypass channel, as shown in Figure 3, described bypass channel comprises two λ/4 microstrip lines and ANT filter, and base station BTS is connected with two λ/4 microstrip lines of connecting, λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT.Because λ/4 microstrip line, ANT filter are passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all PIN switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip line and filter low-loss transmission, and the communication guaranteed is not interrupted.
Fig. 4 is one of circuit structure diagram of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 5 is circuit structure diagram two of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1, SPST2 and diode D3, D10, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 6 is circuit structure diagram three of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 7 is circuit structure diagram four of the present invention, in figure, transmission channel is made up of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus improve the isolation of accepting state; Receive path is made up of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is made up of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in cut-off state, the descending high-power RF signal that now base station BTS sends passes through λ/4 microstrip line W1, W2 and ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 are all in conducting state, the upward signal that antenna receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all diode switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Present invention employs speed-sensitive switch and amplitude limiter, thus make key technical index reach following effect:
Adopt the TDD LTE tower amplifier in the present invention can realize following key technical index:
Maximumly bear power | Average power >=50dBm, peak power >=58dBm |
Return loss | ≥18dB |
TX passage Insertion Loss | ≤0.8dB |
RX gain | 12dB±1dB |
RX gain fluctuation | ±0.5dB |
Noise factor | ≤1.8dB@-40-+55℃ |
Bypass mode Insertion Loss | ≤0.8dB |
Bypass mode return loss | ≥18dB |
Switching time | ≤1μs |
IIP3 | ≥12dBm |
Input 1dB compression point | ≥0dBm |
EVM(rms) | ≤2.0%,LTE TDD Test model |
Operating temperature range | -40-+55℃ |
Claims (2)
1. the high-performance radio-frequency passage of a TDD LTE tower amplifier, it is characterized in that: it comprises transmission channel, receive path, bypass channel and speed-sensitive switch assembly, transmission channel is for transmitting downlink radio-frequency signal, receive path is for transmitting upstream radio-frequency signal, and speed-sensitive switch assembly realizes switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1 ~ SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of two λ/4 microstrip lines of connecting, the output of series connection λ/4 microstrip line is connected with ANT filter, ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines is connected over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter is connected with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 is connected with base station BTS; Described bypass channel comprises two λ/4 microstrip lines and ANT filter, and base station BTS is connected with two λ/4 microstrip lines of connecting, and λ/4 microstrip line of series connection is connected with ANT filter, and ANT filter is connected with antenna ANT;
When circuit is in emission state, the descending high-power RF signal that base station BTS sends passes through two λ/4 microstrip lines and the ANT filter of series connection, low-lossly transfer to antenna ANT, due to the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power leaked in RX passage is very little, is enough to meet the protection requirement to low noise amplifier LNA in receive path;
When circuit is in accepting state, the upward signal that antenna ANT receives is after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA amplification, base station BTS is entered again through RX path filter and speed-sensitive switch SPST2, because the speed-sensitive switch SPST3 of λ/4 microstrip line and conducting provides sufficiently high isolation to upward signal, ensure that low noise amplifier LNA can not produce closed loop self-excitation;
When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, now tower in putting all speed-sensitive switches do not power up, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip line, ANT filter are passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
2., according to the high-performance radio-frequency passage of a kind of TDD LTE tower amplifier described in claim 1, it is characterized in that: described amplifier LNA is radio frequency low-noise amplifier.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201210586481.XA CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
PCT/CN2013/071596 WO2014101340A1 (en) | 2012-12-28 | 2013-02-09 | High-performance radio frequency channel of a tdd lte tower mounted amplifier |
EA201591210A EA201591210A1 (en) | 2012-12-28 | 2013-02-09 | HIGHLY EFFICIENT RADIO-FREQUENCY CHANNEL OF THE TOWER-INSTALLED TDD LTE AMPLIFIER |
Applications Claiming Priority (1)
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CN201210586481.XA CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
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CN103079292A CN103079292A (en) | 2013-05-01 |
CN103079292B true CN103079292B (en) | 2015-08-26 |
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CN201210586481.XA Active CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
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CN (1) | CN103079292B (en) |
EA (1) | EA201591210A1 (en) |
WO (1) | WO2014101340A1 (en) |
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CN108123725B (en) * | 2016-11-29 | 2020-06-16 | 西安华为技术有限公司 | Tower amplifier and method for signal transmission in tower amplifier |
IT202000020314A1 (en) * | 2020-08-21 | 2022-02-21 | Commscope Italy Srl | BYPASSABLE RADIOFREQUENCY FILTERS |
US11770164B2 (en) | 2020-07-17 | 2023-09-26 | Commscope Italy S.R.L. | Bypassable radio frequency filters |
WO2023235678A1 (en) * | 2022-06-01 | 2023-12-07 | Commscope Technologies Llc | Radio frequency feed networks having impedance-matching paths with different impedances, and related methods of operating a base station antenna |
Citations (3)
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CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统(中国)有限公司 | Time division duplex system and tower mounted amplifier based on same |
CN202503487U (en) * | 2012-02-14 | 2012-10-24 | 陈鹏 | Signal generator used in experimental teaching of electrical automation specialty |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8670438B2 (en) * | 2008-03-31 | 2014-03-11 | Sharp Kabushiki Kaisha | Communication system, base station apparatus, and mobile station apparatus |
US20100203922A1 (en) * | 2009-02-10 | 2010-08-12 | Knecht Thomas A | Time Division Duplex Front End Module |
CN202374264U (en) * | 2011-12-12 | 2012-08-08 | 泉州市丰泽华林电子仪器有限公司 | TDD-LTE-based miniature repeater |
CN102710278A (en) * | 2012-06-01 | 2012-10-03 | 天津里外科技有限公司 | Time division-long term evolution (TD-LTE)/time division-synchronous code division multiple access (TD-SCDMA) radio-frequency front transmitter-receiver system |
-
2012
- 2012-12-28 CN CN201210586481.XA patent/CN103079292B/en active Active
-
2013
- 2013-02-09 WO PCT/CN2013/071596 patent/WO2014101340A1/en active Application Filing
- 2013-02-09 EA EA201591210A patent/EA201591210A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统(中国)有限公司 | Time division duplex system and tower mounted amplifier based on same |
CN202503487U (en) * | 2012-02-14 | 2012-10-24 | 陈鹏 | Signal generator used in experimental teaching of electrical automation specialty |
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Publication number | Publication date |
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EA201591210A1 (en) | 2016-02-29 |
WO2014101340A1 (en) | 2014-07-03 |
CN103079292A (en) | 2013-05-01 |
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