CN103079292A - High-performance radio frequency channel for TDD LTE (time division duplexing long term evolution) tower mounted amplifier - Google Patents
High-performance radio frequency channel for TDD LTE (time division duplexing long term evolution) tower mounted amplifier Download PDFInfo
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- CN103079292A CN103079292A CN201210586481XA CN201210586481A CN103079292A CN 103079292 A CN103079292 A CN 103079292A CN 201210586481X A CN201210586481X A CN 201210586481XA CN 201210586481 A CN201210586481 A CN 201210586481A CN 103079292 A CN103079292 A CN 103079292A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
Abstract
The invention discloses a high-performance radio frequency channel for a TDD LTE (time division duplexing long term evolution) tower mounted amplifier. The high-performance radio frequency channel for the TDD LTE tower mounted amplifier comprises an emission channel, a receiving channel and a high-speed switch assembly, wherein the emission channel is used for transmitting a downlink radio frequency signal; the receiving channel is used for transmitting an uplink radio frequency signal; the high-speed switch assembly is used for switching and isolating the emission channel and the receiving channel; the high-speed switch assembly comprises at least three high-speed switches SPST1-SPST3; the emission channel comprises two lambda/4 micro-strip lines and an ANT filter; and the receiving channel comprises an ANT filter, a low-noise amplifier (LNA), an RX channel filter and a bypass channel, wherein the bypass channel comprises two lambda/4 micro-trip lines and an ANT filter. The high-performance radio frequency channel for the TDD LTE tower mounted amplifier, which is disclosed by the invention, can be used for bearing high power and has the characteristics of low insertion loss and low noise, and base station communication is prevented from interrupting with the insertion loss as low as possible during power failure and amplifier breakdown.
Description
Technical field
The present invention relates to a kind of high-performance radio-frequency passage of TDD LTE tower amplifier.
Background technology
TD-LTE is that Time Division Long Term Evolution is the 4G communication technology of a new generation, the characteristics of TD-LTE a new generation communication technology are: operating frequency is higher, transmission speed is faster, the amount of information of carrying is larger, requirement equipment is more exquisite, reliability is higher, requirement has better Internet phone-calling quality, and these have all proposed harsher specification requirement to the device supplier.
Tower amplifier is called for short tower to be put or TMA(Tower Mounted Amplifier), its purposes provides amplifies near the cat head reception of antenna.Receive the signal amplification and compensated the feeder loss from the antenna to the base station, thereby improved the receiving sensitivity of base station.And tower is put very low noise factor usually, improves so that the noise factor of base station has further.Tower is put to be needed to support bypass functionality, unimpeded with what guarantee to communicate by letter under abnormality.TDD is Time Division Duplex(time division duplex) the tower up-downgoing of putting uses identical frequency range, and need to put inside at tower and carry out accurate up-downgoing control.
Traditional tower amplifier all is the FDD mode.And the 4G communication system TD-LTE that adopts the TDD mode has just begun to promote in the whole world, and the TDDLTE tower amplifier is a kind of brand-new product especially, because the design that the TDD mode is put to tower brings very high specification requirement, does not therefore also have on the market at present ripe product.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art; provide a kind of and can bear high power, have filter with low insertion loss and low-noise characteristic, can guarantee when power down and amplifier fault with the descending and upward signal of alap Insertion Loss transmission, the high-performance radio-frequency passage of unbroken a kind of TDD LTE tower amplifier of guaranteeing to communicate by letter between base station and the travelling carriage.
The objective of the invention is to be achieved through the following technical solutions: a kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is used for transmitting downlink radio-frequency signal, receive path is used for transmitting up radiofrequency signal, and the speed-sensitive switch assembly is realized switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1～SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of the λ of two series connection/4 microstrip lines, the output of series connection λ/4 microstrip lines links to each other with the ANT filter, the ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines connects over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter links to each other with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 links to each other with base station BTS.
Amplifier LNA of the present invention is radio frequency low-noise amplifier.
It also comprises a bypass channel the present invention, described bypass channel comprises two λ/4 microstrip lines and ANT filter, the λ of base station BTS and two series connection/4 microstrip lines are connected, and the λ of series connection/4 microstrip lines link to each other with the ANT filter, and the ANT filter links to each other with antenna ANT.Because λ/4 microstrip lines, ANT filter are the passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all PIN switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip lines and filter low-loss transmission, and the communication guaranteed is not interrupted.
The invention has the beneficial effects as follows: in transmission channel, utilize λ/4 microstrip lines and high-power PIN diode to realize isolation when accepting state, adopt the parallel connection of two PIN diode circuit to improve isolation, avoid low noise amplifier LNA self-excitation under accepting state, wherein the PIN diode circuit adopts two diode series connection reversal connections, avoid when emission state and bypass condition diode current flow under the high-power condition; In receive path; adopt the mode of two diode series connection reversal connections to realize Transmit enable; under accepting state, has filter with low insertion loss; thereby realize low noise factor index; thereby under emission state and bypass condition, have high isolation low noise amplifier LNA is protected, can not be punctured by descending high-power RF signal.
Description of drawings
Fig. 1 is the transmission channel of principle of the invention figure;
Fig. 2 is the receive path of principle of the invention figure;
Fig. 3 is the bypass channel of principle of the invention figure;
Fig. 4 is the first circuit form of the present invention;
Fig. 5 is the second circuit form of the present invention;
Fig. 6 is the third circuit form of the present invention;
Fig. 7 is the 4th kind of circuit form of the present invention.
Embodiment
Below in conjunction with embodiment technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
A kind of high-performance radio-frequency passage of TDD LTE tower amplifier, it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is used for transmitting downlink radio-frequency signal, receive path is used for transmitting up radiofrequency signal, and the speed-sensitive switch assembly is realized switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1～SPST3;
As shown in Figure 1, described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of the λ of two series connection/4 microstrip lines, the output of series connection λ/4 microstrip lines links to each other with the ANT filter, the ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines connects over the ground by speed-sensitive switch SPST3.
As shown in Figure 2, described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter links to each other with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, switch S PST2 links to each other with base station BTS, and described amplifier LNA is radio frequency low-noise amplifier.
The present invention also comprises a bypass channel, as shown in Figure 3, described bypass channel comprises two λ/4 microstrip lines and ANT filter, and the λ of base station BTS and two series connection/4 microstrip lines are connected, the λ of series connection/4 microstrip lines link to each other with the ANT filter, and the ANT filter links to each other with antenna ANT.Because λ/4 microstrip lines, ANT filter are the passive bidirectional device, when system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all PIN switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, and downstream signal and upward signal all pass through λ/4 microstrip lines and filter low-loss transmission, and the communication guaranteed is not interrupted.
Fig. 4 is one of circuit structure diagram of the present invention, among the figure, transmission channel is comprised of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus the isolation of accepting state improved; Receive path is comprised of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is comprised of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in cut-off state, the λ of the descending high-power RF signal that sends of base station BTS this moment by series connection/4 microstrip line W1, W2 and ANT filter, low-loss antenna ANT that transfers to, because the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power that leaks in the RX passage is very little, is enough to satisfy the protection requirement to low noise amplifier LNA in the receive path; When circuit is in accepting state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in conducting state, antenna reception to upward signal after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA and amplify, enter base station BTS through RX path filter and speed-sensitive switch SPST2 again, because the speed-sensitive switch SPST3 of λ/4 microstrip lines and conducting provides sufficiently high isolation to upward signal, has guaranteed that low noise amplifier LNA can not produce the closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all diode switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip lines, ANT filter are the passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 5 is two of circuit structure diagram of the present invention, among the figure, transmission channel is comprised of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus the isolation of accepting state improved; Receive path is comprised of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is comprised of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in cut-off state, the λ of the descending high-power RF signal that sends of base station BTS this moment by series connection/4 microstrip line W1, W2 and ANT filter, low-loss antenna ANT that transfers to, because the effect of speed-sensitive switch SPST1, SPST2 and diode D3, D10, the radio-frequency power that leaks in the RX passage is very little, is enough to satisfy the protection requirement to low noise amplifier LNA in the receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in conducting state, antenna reception to upward signal after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA and amplify, enter base station BTS through RX path filter and speed-sensitive switch SPST2 again, because the speed-sensitive switch SPST3 of λ/4 microstrip lines and conducting provides sufficiently high isolation to upward signal, has guaranteed that low noise amplifier LNA can not produce the closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all diode switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip lines, ANT filter are the passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 6 is three of circuit structure diagram of the present invention, among the figure, transmission channel is comprised of λ/4 microstrip line W1, W2, ANT filter, diode D3, D4, D5, D6, diode D3, D4 and diode D5, D6 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus the isolation of accepting state improved; Receive path is comprised of ANT filter, diode D7, D8, D1, D2 and amplifier LNA and RX path filter, and diode D7, D8 form speed-sensitive switch SPST1, and diode D1, D2 form speed-sensitive switch SPST2; Bypass channel is comprised of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in cut-off state, the λ of the descending high-power RF signal that sends of base station BTS this moment by series connection/4 microstrip line W1, W2 and ANT filter, low-loss antenna ANT that transfers to, because the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power that leaks in the RX passage is very little, is enough to satisfy the protection requirement to low noise amplifier LNA in the receive path; When circuit is in accepting state, control voltage is-5V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in conducting state, antenna reception to upward signal after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA and amplify, enter base station BTS through RX path filter and speed-sensitive switch SPST2 again, because the speed-sensitive switch SPST3 of λ/4 microstrip lines and conducting provides sufficiently high isolation to upward signal, has guaranteed that low noise amplifier LNA can not produce the closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all diode switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip lines, ANT filter are the passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
Fig. 7 is four of circuit structure diagram of the present invention, among the figure, transmission channel is comprised of λ/4 microstrip line W1, W2, ANT filter, diode D4, D5, D6, D7, diode D4, D5 and diode D6, D7 form two speed-sensitive switches, two speed-sensitive switch parallel connections, thus the isolation of accepting state improved; Receive path is comprised of ANT filter, diode D8, D9, D10, D1, D2, D3 and amplifier LNA and RX path filter, diode D8, D9 form speed-sensitive switch SPST1, diode D1, D2 form speed-sensitive switch SPST2, and diode D10, D3 play amplitude limiter; Bypass channel is comprised of λ/4 microstrip line W1, W2 and ANT filter.
When circuit is in emission state, control voltage is+28V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in cut-off state, the λ of the descending high-power RF signal that sends of base station BTS this moment by series connection/4 microstrip line W1, W2 and ANT filter, low-loss antenna ANT that transfers to, because the effect of speed-sensitive switch SPST1 and SPST2, the radio-frequency power that leaks in the RX passage is very little, is enough to satisfy the protection requirement to low noise amplifier LNA in the receive path; When circuit is in accepting state, control voltage is 0V, all diode D1, D2, D3, D4, D5, D6, D7, D8 all are in conducting state, antenna reception to upward signal after ANT filter, speed-sensitive switch SPST1 enter low noise amplifier LNA and amplify, enter base station BTS through RX path filter and speed-sensitive switch SPST2 again, because the speed-sensitive switch SPST3 of λ/4 microstrip lines and conducting provides sufficiently high isolation to upward signal, has guaranteed that low noise amplifier LNA can not produce the closed loop self-excitation; When system power failure or low noise amplifier LNA fault, TDD LTE tower amplifier enters bypass condition, all diode switches did not power up during tower was put at this moment, be in cut-off state, up low noise amplifier LNA does not work, because λ/4 microstrip lines, ANT filter are the passive bidirectional device, downstream signal and upward signal are all by microstrip line and ANT filter low-loss transmission, and the communication still can guaranteed is not interrupted.
The present invention has adopted speed-sensitive switch and amplitude limiter, thereby makes key technical index reach following effect:
Adopt the TDD LTE tower amplifier among the present invention can realize following key technical index:
| Maximum is born power | Average power 〉=50dBm, peak power 〉=58dBm |
| Return loss | ≥18dB |
| TX passage Insertion Loss | ≤0.8dB |
| The RX gain | 12dB±1dB |
| The RX gain fluctuation | ±0.5dB |
| Noise factor | ≤1.8dB-40-+55℃ |
| The bypass mode Insertion Loss | ≤0.8dB |
| Bypass mode return loss | ≥18dB |
| Switching time | ≤1μs |
| IIP3 | ≥12dBm |
| Input 1dB compression point | ≥0dBm |
| EVM(rms) | ≤2.0%，LTE TDD Test model |
| Operating temperature range | -40-+55℃ |
Claims (3)
1. the high-performance radio-frequency passage of a TDD LTE tower amplifier, it is characterized in that: it comprises transmission channel, receive path and speed-sensitive switch assembly, transmission channel is used for transmitting downlink radio-frequency signal, receive path is used for transmitting up radiofrequency signal, and the speed-sensitive switch assembly is realized switching and the isolation of transmission channel and receive path; Described speed-sensitive switch assembly comprises at least three speed-sensitive switch SPST1～SPST3; Described transmission channel comprises two λ/4 microstrip lines and ANT filter, the lower line output of base station BTS is connected with the input of the λ of two series connection/4 microstrip lines, the output of series connection λ/4 microstrip lines links to each other with the ANT filter, the ANT filter is connected with antenna ANT, and the mid point of two λ/4 microstrip lines connects over the ground by speed-sensitive switch SPST3; Described receive path comprises ANT filter, amplitude limiter, amplifier LNA and RX path filter, one end of ANT filter is connected with antenna ANT, the other end of ANT filter links to each other with speed-sensitive switch SPST1, speed-sensitive switch SPST1, amplitude limiter Limiter1, amplifier LNA, RX path filter, amplitude limiter Limiter2, speed-sensitive switch SPST2 are in sequential series, and switch S PST2 links to each other with base station BTS.
2. the high-performance radio-frequency passage of a kind of TDD LTE tower amplifier according to claim 1, it is characterized in that: described amplifier LNA is radio frequency low-noise amplifier.
3. the high-performance radio-frequency passage of a kind of TDD LTE tower amplifier according to claim 1, it is characterized in that: it also comprises a bypass channel, described bypass channel comprises two λ/4 microstrip lines and ANT filter, the λ of base station BTS and two series connection/4 microstrip lines are connected, the λ of series connection/4 microstrip lines link to each other with the ANT filter, and the ANT filter links to each other with antenna ANT.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210586481.XA CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
| EA201591210A EA201591210A1 (en) | 2012-12-28 | 2013-02-09 | HIGHLY EFFICIENT RADIO-FREQUENCY CHANNEL OF THE TOWER-INSTALLED TDD LTE AMPLIFIER |
| PCT/CN2013/071596 WO2014101340A1 (en) | 2012-12-28 | 2013-02-09 | High-performance radio frequency channel of a tdd lte tower mounted amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210586481.XA CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
Publications (2)
| Publication Number | Publication Date |
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| CN103079292A true CN103079292A (en) | 2013-05-01 |
| CN103079292B CN103079292B (en) | 2015-08-26 |
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| CN201210586481.XA Active CN103079292B (en) | 2012-12-28 | 2012-12-28 | A kind of high-performance radio-frequency passage of TDD LTE tower amplifier |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN103079292B (en) |
| EA (1) | EA201591210A1 (en) |
| WO (1) | WO2014101340A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108123725B (en) * | 2016-11-29 | 2020-06-16 | 西安华为技术有限公司 | Tower amplifier and method for signal transmission in tower amplifier |
| IT202000020314A1 (en) * | 2020-08-21 | 2022-02-21 | Commscope Italy Srl | BYPASSABLE RADIOFREQUENCY FILTERS |
| US11770164B2 (en) | 2020-07-17 | 2023-09-26 | Commscope Italy S.R.L. | Bypassable radio frequency filters |
| WO2023235678A1 (en) * | 2022-06-01 | 2023-12-07 | Commscope Technologies Llc | Radio frequency feed networks having impedance-matching paths with different impedances, and related methods of operating a base station antenna |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
| CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统（中国）有限公司 | Time division duplex system and tower mounted amplifier based on same |
| US20110034177A1 (en) * | 2008-03-31 | 2011-02-10 | Sharp Kabushiki Kaisha | Communication system, base station apparatus, and mobile station apparatus |
| CN202503487U (en) * | 2012-02-14 | 2012-10-24 | 陈鹏 | Signal generator used in experimental teaching of electrical automation specialty |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100203922A1 (en) * | 2009-02-10 | 2010-08-12 | Knecht Thomas A | Time Division Duplex Front End Module |
| CN202374264U (en) * | 2011-12-12 | 2012-08-08 | 泉州市丰泽华林电子仪器有限公司 | TDD-LTE-based miniature repeater |
| CN102710278A (en) * | 2012-06-01 | 2012-10-03 | 天津里外科技有限公司 | Time division-long term evolution (TD-LTE)/time division-synchronous code division multiple access (TD-SCDMA) radio-frequency front transmitter-receiver system |
-
2012
- 2012-12-28 CN CN201210586481.XA patent/CN103079292B/en active Active
-
2013
- 2013-02-09 WO PCT/CN2013/071596 patent/WO2014101340A1/en active Application Filing
- 2013-02-09 EA EA201591210A patent/EA201591210A1/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
| US20110034177A1 (en) * | 2008-03-31 | 2011-02-10 | Sharp Kabushiki Kaisha | Communication system, base station apparatus, and mobile station apparatus |
| CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统（中国）有限公司 | Time division duplex system and tower mounted amplifier based on same |
| CN202503487U (en) * | 2012-02-14 | 2012-10-24 | 陈鹏 | Signal generator used in experimental teaching of electrical automation specialty |
Also Published As
| Publication number | Publication date |
|---|---|
| EA201591210A1 (en) | 2016-02-29 |
| WO2014101340A1 (en) | 2014-07-03 |
| CN103079292B (en) | 2015-08-26 |
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