CN203554386U - Power switching circuit of radio frequency power amplifier - Google Patents
Power switching circuit of radio frequency power amplifier Download PDFInfo
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- CN203554386U CN203554386U CN201320765799.4U CN201320765799U CN203554386U CN 203554386 U CN203554386 U CN 203554386U CN 201320765799 U CN201320765799 U CN 201320765799U CN 203554386 U CN203554386 U CN 203554386U
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Abstract
The utility model relates to a power switching circuit of a radio frequency power amplifier. The switching circuit comprises a high-power amplification path, a low-frequency amplification path and a control circuit, wherein the high-power amplification path and the low-power amplification path are arranged side by side. The input end of the high-power amplification path and the input end of the low-power amplification path are respectively connected with a bridging capacitor in series, and an independent diverter switch is connected in at least one power amplification path in series. The control circuit controls the output in the at least one power amplification path as needed. Preferably, the independent diverter switch is connected between a power amplifier of the corresponding power amplification path and a matched network in series. According to the power switching circuit, the efficiency of the power amplifier is effectively improved, the difficulty of circuit design is reduced, meanwhile, devices in the circuit can be obtained by the adoption of the CMOS or SOI technology, all the devices can be integrated on the same chip, the area of the circuit is reduced, the integration level is improved, and the cost is effectively reduced.
Description
Technical field
The utility model relates to radio-frequency power amplifier technical field, specifically refers to a kind of circuit that utilizes switch and coupling to switch the power of radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier is circuit module indispensable in wireless communication system, be widely used in the Wireless Telecom Equipments such as mobile phone, mobile terminal and electronic system, be responsible for the radiofrequency signal after modulated to be amplified to certain performance number, by antenna transmission, go out, its importance is self-evident again.The modern mobile communcations systems such as the mobile phone using in daily life, in order to extend the service time of lithium battery, increase the air time, and one of effective way is to improve the efficiency of power amplifier.
The power output of communication system intermediate power amplifier changes along with the signal power of base station, is not the very high power of required power amplifier output always.When receiving the base station distance of mobile phone signal when far, need a very high power grade of mobile phone transmitting, to guarantee that base station can receive enough signal strength signal intensities; But when mobile phone from base station distance very close to time, for guarantee mobile phone have in this state very high efficiency, require the emitting power grade of mobile phone little.In order to improve the average efficiency of radio-frequency power amplifier, be just necessary to adopt the radio-frequency (RF) power amplifier circuit with different transmission power grade.
In existing 3G terminal equipment, improve the power switching circuitry of radio-frequency power amplifier average efficiency as shown in Figure 1, this power amplifier is realized the switching of different capacity grade by the diverter switch SW10 of radio-frequency (RF) signal input end RFIN and the diverter switch SW11 of radiofrequency signal output.As diverter switch SW10 and SW11 under the control in control system, when diverter switch SW10 is connected with 1 tip side and diverter switch SW11 is connected with 3 tip sides, radiofrequency signal is successively by after drive circuit 10, power amplifier PA10 and match circuit 10 in high power path, radiofrequency signal output RFOUT output high-power, now low-power passage is in off position; Otherwise, when diverter switch SW10 is connected with 2 tip sides and when diverter switch SW11 is connected with 4 tip sides, radiofrequency signal is successively by after drive circuit 11, power amplifier PA11 and match circuit 11 in low power paths, radiofrequency signal output RFOUT exports low-power, and now high power passage is in off position.Wherein diverter switch SWI0 and SW11 all can introduce insertion loss, will cause power amplifier to reduce, and have increased complexity and the production cost of circuit design.And in prior art, drive circuit and power amplifier adopt HBT technique to realize, and diverter switch realizes by SOI or PHEMT, control circuit is realized by CMOS, remaining match circuit is all produced in the peripheral substrate of chip, make whole power amplifier integrated level low, the area of whole circuit is large, cost is high.
Summary of the invention
The utility model is intended to solve the problem that in prior art, the high and low power switching circuitry efficiency of radio-frequency power amplifier is low, integrated level is low, design difficulty is large, and a kind of high efficiency, fully integrated radio-frequency power amplifier power switching circuitry are provided.
For addressing the above problem, technical solution adopted in the utility model is: a kind of radio-frequency power amplifier power switching circuitry, comprise parallel high power amplification path, low-power amplification path and control circuit, the described high and low power amplification path input capacitance of connecting respectively, and the independently diverter switch of at least connecting in a power amplification path, described control circuit is controlled as required at least one power amplification path and is exported.
Described independently diverter switch is series between the power amplifier and matching network in corresponding power amplification path.
Described low-power amplification path comprises the first capacitance, the first device drive circuit, low power amplifier, the first diverter switch, the first impedance matching circuit and the output matching circuit that connect successively.
Described high power amplification path comprises the second capacitance, the second drive circuit, high power amplifier, the second diverter switch, the second impedance matching circuit and the output matching circuit that connect successively.
Described high power amplification path also comprises the 3rd drive circuit, and described the 3rd drive circuit is series between the second device drive circuit and high power amplifier.
Described high power amplification path, low-power amplification path and control circuit all adopt CMOS or SOI technique to realize.
Described high power amplification path, low-power amplification path and control circuit are integrated in same chip.
Compared with prior art, the utlity model has following advantage;
Radio-frequency power amplifier power switching circuitry described in the utility model is in two kinds of power amplification paths of height, independently diverter switch and match circuit are all set, make circuit control mode simple, and can effectively reduce the loss of switch, improve efficiency of RF power amplifier, in addition, because the existing GAAS technique that is used for making power amplifier can not provide controller and the required NMOS pipe of switch designs, cannot realize the integrated of power amplifier switch and controller, and switch and controller corresponding to switch that circuit described in the utility model adopts all can adopt CMOS or SOI technique, therefore can be integrated in easily on chip piece, with respect to only adopting HBT technique integrated drive circuit and power amplifier in prior art, switch and control circuit adopt the production method of other techniques, circuit structure of the present utility model can improve integrated level greatly, reduce chip area, reduce actual cost.
Accompanying drawing explanation
Fig. 1 is the schematic block diagram of radio-frequency power amplifier power switching circuitry of the prior art;
Fig. 2 is the schematic block diagram of a preferred embodiment of radio-frequency power amplifier power switching circuitry described in the utility model;
Fig. 3 is the schematic block diagram of the second embodiment of radio-frequency power amplifier power switching circuitry described in the utility model.
Embodiment
For the ease of it will be appreciated by those skilled in the art that the utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 2 is the utility model the first preferred embodiment.In this embodiment, at height, all seal in independently diverter switch in two kinds of power amplification paths, and add two-stage drive circuit in high power amplification path, the two amplification path inputs capacitance of having connected respectively.In fact, in high-low power amplification path, drive circuit is set, several stage drive circuits are specifically set, according to the setting of circuit actual needs.
Described circuit working is when high power magnifying state, control circuit control diverter switch SW20 conducting, SW21 disconnect, now low outgoing route is in open-circuit condition, from the b1 of impedance matching circuit 20 outputs, hold the resistance value of seeing to be into close to infinity, diverter switch SW20 and SW21 play a part isolation to the signal of output in two paths in parallel, prevent the phase mutual interference between output end signal.Radio-frequency input signals is input to capacitor C 20 high power amplification path from RFIN end, and C20 has the effect of stopping direct current, and the parallel power path input of two-way is played a part to isolation, prevents the signal interference of different paths at input.The signal of exporting from capacitor C 20 is input to again first order drive circuit D20 and the second level drive circuit D21 of series connection, then be input to high power amplifier PA20, by three grades of amplifications, make power output meet the highest outputting standard of 3G PA, signal after amplifying is by match circuit 20, be matched certain resistance value, this resistance value matches again the input impedance value of output antenna that RFOUT connects by output matching circuit 22, be generally 50 ohm.And the humorous wave interference that match circuit 20 effectively produces in the work of filtering part high power path, improves the efficiency of this high power amplification path.
Described circuit working is when low-power magnifying state, and control circuit control switch SW20 disconnects, SW21 conducting, and high power amplification path is in open-circuit condition, and the resistance value of seeing into from impedance matching circuit 20 outputs is close to infinity.Input signal is from the input RFIN input of low-power amplification path, after capacitance C21, after overdrive circuit D22 and the amplification of low power amplifier two-stage, through switch SW 21 and match circuit 21, be matched certain resistance value, this resistance value matches again the input impedance value of output antenna that RFOUT connects by output matching circuit 22, be generally 50 ohm.Two parallel power channels share input node R FIN, an output node RFOUT and output matching circuit 22, can simplify circuit structure, dwindle circuit size.
Fig. 3 is the utility model the second embodiment schematic diagram.The diverter switch of only having connected in low-power amplification path in this embodiment, and in high power amplification path, add two-stage drive circuit, the two amplification path inputs capacitance of having connected respectively.Control circuit is by the operating state of drive circuit D30, D31 and high power amplifier PA30 in control high power amplification path, and in cooperation control low-power amplification path, the break-make of diverter switch SW30 and match circuit are realized the power switching of power amplifier jointly.
In the present embodiment, the implementation shown in Fig. 2 of comparing, has saved the diverter switch in a high power amplification path.When the power of output high-power grade, control circuit control switch SW30 disconnects, and low-power amplification path is in off position; When exporting the power of low power level, control circuit control drive circuit D30, D31 and high power amplifier PA30 do not work, diverter switch SW30 conducting in low-power amplification path; Now, in high power amplification path, the resistance value of seeing into from the a2 point of impedance matching circuit 30 outputs trends towards infinity, and high power amplification path is in off position, and signal is exported from output RFOUT after low-power amplification path amplifies.Other working methods, with embodiment mono-, repeat no more here.
These are only more preferably embodiment of the utility model, it should be noted that, not departing from any minor variations of under the utility model design prerequisite, it being done and being equal to replacement, all should belong to protection range of the present utility model.
Claims (7)
1. a radio-frequency power amplifier power switching circuitry, comprise parallel high power amplification path, low-power amplification path and control circuit, it is characterized in that, the described high and low power amplification path input capacitance of connecting respectively, and the independently diverter switch of at least connecting in a power amplification path, described control circuit is controlled as required at least one power amplification path and is exported.
2. radio-frequency power amplifier power switching circuitry according to claim 1, is characterized in that, described independently diverter switch is series between the power amplifier and matching network in corresponding power amplification path.
3. radio-frequency power amplifier power switching circuitry according to claim 1, it is characterized in that, described low-power amplification path comprises the first capacitance (C21), the first drive circuit (D22), low power amplifier (PA21), the first diverter switch (SW21), the first impedance matching circuit (21) and the output matching circuit (22) that connect successively.
4. radio-frequency power amplifier power switching circuitry according to claim 1, it is characterized in that, described high power amplification path comprises the second capacitance (C20), the second drive circuit (D20), high power amplifier (PA20), the second diverter switch (SW20), the second impedance matching circuit (20) and the output matching circuit (22) that connect successively.
5. radio-frequency power amplifier power switching circuitry according to claim 4, it is characterized in that, described high power amplification path also comprises the 3rd drive circuit (D21), and described the 3rd drive circuit is series between the second device drive circuit (D22) and high power amplifier (PA20).
6. according to the radio-frequency power amplifier power switching circuitry described in any one in claim 1-5, it is characterized in that, described high power amplification path, low-power amplification path and control circuit all adopt CMOS or SOI technique to realize.
7. radio-frequency power amplifier power switching circuitry according to claim 6, is characterized in that, described high power amplification path, low-power amplification path and control circuit are integrated in same chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320765799.4U CN203554386U (en) | 2013-11-29 | 2013-11-29 | Power switching circuit of radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320765799.4U CN203554386U (en) | 2013-11-29 | 2013-11-29 | Power switching circuit of radio frequency power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN203554386U true CN203554386U (en) | 2014-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320765799.4U Expired - Lifetime CN203554386U (en) | 2013-11-29 | 2013-11-29 | Power switching circuit of radio frequency power amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684272A (en) * | 2013-11-29 | 2014-03-26 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier power switching circuit |
| US20140089686A1 (en) * | 2012-09-24 | 2014-03-27 | Texas Instruments, Incorporated | Bus pin reduction and power management |
| CN103684272B (en) * | 2013-11-29 | 2016-11-30 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier power switching circuitry |
-
2013
- 2013-11-29 CN CN201320765799.4U patent/CN203554386U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140089686A1 (en) * | 2012-09-24 | 2014-03-27 | Texas Instruments, Incorporated | Bus pin reduction and power management |
| US9128690B2 (en) * | 2012-09-24 | 2015-09-08 | Texas Instruments Incorporated | Bus pin reduction and power management |
| CN103684272A (en) * | 2013-11-29 | 2014-03-26 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier power switching circuit |
| CN103684272B (en) * | 2013-11-29 | 2016-11-30 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier power switching circuitry |
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| C14 | Grant of patent or utility model | ||
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Effective date of registration: 20170607 Address after: 100088 Beijing city Haidian District Road No. 6 Jinqiu International Building block A room 1607 Patentee after: BEIJING HUNTERSUN ELECTRONIC CO.,LTD. Address before: 516023, DESAY building, 12 Yunshan West Road, nineteen, Guangdong, Huizhou Patentee before: ZYW MICROELECTRONICS Inc. |
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| CP02 | Change in the address of a patent holder | ||
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Address after: 100084 5F floor, building 1, building 1, seven street, Haidian District, Beijing Patentee after: BEIJING HUNTERSUN ELECTRONIC CO.,LTD. Address before: 100088 Beijing city Haidian District Road No. 6 Jinqiu International Building block A room 1607 Patentee before: BEIJING HUNTERSUN ELECTRONIC CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100084 floor 5F, No. 1, No. 1, Haidian District, Haidian District, Beijing Patentee after: Beijing Angrui Microelectronics Technology Co.,Ltd. Address before: 100084 floor 5F, No. 1, No. 1, Haidian District, Haidian District, Beijing Patentee before: BEIJING HUNTERSUN ELECTRONIC CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100084 5F, building 1, No.1, shangdiqi street, Haidian District, Beijing Patentee after: Beijing Angrui Microelectronics Technology Co.,Ltd. Address before: 100084 5F, building 1, No.1, shangdiqi street, Haidian District, Beijing Patentee before: Beijing Angrui Microelectronics Technology Co.,Ltd. |
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Granted publication date: 20140416 |