CN207542268U - Light emitting diode - Google Patents
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- CN207542268U CN207542268U CN201721327854.6U CN201721327854U CN207542268U CN 207542268 U CN207542268 U CN 207542268U CN 201721327854 U CN201721327854 U CN 201721327854U CN 207542268 U CN207542268 U CN 207542268U
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Abstract
The utility model discloses a kind of light emitting diode, including：Light emitting epitaxial layer includes the first semiconductor layer, luminescent layer and the second semiconductor layer successively from top to bottom, and upper surface is equipped with the first region, and it includes pad areas and expansion area；Transparency conducting layer is formed on the surface of the first semiconductor layer of the light emitting epitaxial layer；Protective layer is formed on the surface of the transparency conducting layer, and a series of first opening is formed around the pad area, the second opening is formed in expansion area, exposes the surface of the transparency conducting layer；First electrode is formed on the protective layer, and comprising pad, extension item and feeler, the feeler both ends connect pad and the first opening respectively, and the extension item is connect by the second opening with the transparency conducting layer.
Description
Technical field
The utility model is related to semiconductor element, more particularly, to a kind of light emitting diode.
Background technology
Since light emitting diode has the advantages that long lifespan, small, high vibration strength, fever degree are small and power consumption is low etc.,
Light emitting diode has been widely used in the indicator light or light source of household appliances and various instrument.
The gallium nitride based LED chip fabrication technique of early stage is usually by mesa etch (MESA), making transparency conducting layer（Such as
ITO）, make electrode and make protective layer four technique composition, the light-emitting diode chip for backlight unit formed is as shown in Figure 1, it is general
Including substrate 101, N-type layer 111, luminescent layer 112, P-type layer 113, transparency conducting layer 120, P electrode 141 (pad 143 and extension
Item 144), N electrode 142 and protective layer 130.In gallium nitride based LED, p-GaN is relatively low due to its carrier mobility, it will usually
PAD causes bottom certain electric current congestion.Therefore, it typically now can increase current barrier layer 150 in the bottom of P-type electrode, use
In crossing for electric current is inhibited to inject, increase the current spread of transparency conducting layer, as shown in Figure 2.The chip fabrication technique is typically at least
Including mesa etch (MESA), make current barrier layer, making current extending（Such as ITO）, make electrode and make protection
Five technique of layer.
Utility model content
The utility model provides a kind of light emitting diode, first makes protective layer after transparency conducting layer is formed, finally
Electrode is made again, which can be used as current barrier layer simultaneously, on the one hand can reduce technique, on the other hand can effectively carry
Rise the luminous efficiency of light emitting diode.
Technical solutions of the utility model are：Light emitting epitaxial layer, from top to bottom successively include the first semiconductor layer, luminescent layer and
Second semiconductor layer, upper surface are equipped with the first region, and it includes pad areas and expansion area；Transparency conducting layer is formed in institute
On the surface for stating the first semiconductor layer；Protective layer is formed on the surface of the transparency conducting layer, in the week of the pad area
It encloses to form a series of first opening, the second opening is formed in expansion area, expose the surface of the transparency conducting layer；First electricity
Pole is formed on the protective layer, is connected pad and first respectively comprising pad, extension item and feeler, the feeler both ends and is opened
Mouthful, the extension item is connect by the second opening with the transparency conducting layer.
In some embodiments, the protective layer is equipped with the third hatch frame of annular in the pad area.
In some embodiments, the transparency conducting layer is equipped with the 4th hatch frame in the pad area.
Preferably, the inner ring diameter of the third opening is less than the diameter of the described 4th opening, and race diameter is more than described
The diameter of 4th opening.
Preferably, the diameter of the 4th opening is more than the outer diameter diameter of third opening, less than the inside cutting of the first opening
Circular diameter.
In some embodiments, the pad contacts simultaneously with the protective layer, transparency conducting layer.
In some embodiments, the upper surface of the light emitting epitaxial layer is additionally provided with second electrode area, the second electrode area
Table top is formed, exposes the part surface of second semiconductor layer, the protective layer covers the surface of the table top and shape simultaneously
Into the 5th hatch frame.Further, the light emitting diode further includes second electrode, is formed on the protective layer, and
It is contacted by the 5th hatch frame with the surface of second semiconductor layer.
Preferably, the number of the feeler is 1 ~ 20.
Preferably, the thickness d of the protective layer be λ/4n × (2k-1), wherein λ be the luminescent layer emission wavelength, n
For the refractive index of protective layer, k is more than 1 natural number.
In some embodiments, the first electrode is in step-like in pad area.
The utility model includes at least following advantageous effect：
（1）Above-mentioned light emitting diode is initially formed protective layer over transparent conductive layer, re-forms electrode, and the protective layer is on the one hand
Light emitting diode is protected not to be damaged, it on the other hand again can be directly as current barrier layer, for inhibiting the electric current of base part
Injection is crossed, increases the current spread of transparency conducting layer；
（2）The first electrode of above-mentioned light emitting diode directly and semiconductor layer, is effectively increased electrode and extension in pad area
Adhesiveness between layer, the risk that electrode comes off with attachment interface when can reduce routing；
（3）Feeler is formed in the pad area periphery of first electrode, increases the pad area and transparency conducting layer of first electrode
Contact area alleviates the electric current congestion effect on pad area and expansion area, reduces the risk that electrode metal is precipitated and burns；
（4）The design of protective layer, the metal that electrode extension area can be reduced using refractive power effect are in the light area, promote LED's
Efficiency of light extraction；
（5）The design of protective layer forms full-shape speculum, can improve the albedo in electrode extension area, reduces extinction effect
Rate；
（6）Above-mentioned light emitting diode is initially formed protective layer over transparent conductive layer, re-forms electrode, can reduce protective layer
The probability that active metal is aoxidized in electrode structure in manufacturing process；
（7）The production method of above-mentioned light emitting diode will make current barrier layer be combined into protective layer together with technique, simplify
Technique.
Other features and advantages of the utility model will illustrate, also, in the following description partly from specification
In become apparent or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and is obtained in specification, claims and attached drawing.
Although the utility model, this field skill are described hereinafter in connection with some exemplary implementations and application method
Art personnel should understand that, it is no intended to which the utility model is limited to these embodiments.It is on the contrary, it is intended to which that covering is included in appended
All substitutes, amendment and equivalent in the spirit and scope of the utility model as defined in the claims.
Description of the drawings
Attached drawing is used to provide a further understanding of the present invention, and a part for constitution instruction, with this practicality
New embodiment for explaining the utility model, does not form the limitation to the utility model together.In addition, attached drawing data are to retouch
Summary is stated, is not drawn to scale.
Fig. 1 is the structure diagram of existing light emitting diode.
Fig. 2 is the structure diagram of another existing light emitting diode.
Fig. 3 is the structure diagram of the light emitting diode of the utility model embodiment 1.
Fig. 4 is the vertical view of the light emitting diode of the utility model embodiment 1.
Fig. 5 is the light shield figure of the making light emitting diode of the utility model embodiment 2.
Fig. 6 ~ Fig. 8 is the diagrammatic cross-section of the making light emitting diode of the utility model embodiment 2.
Fig. 9 is the structure diagram of the light emitting diode of the utility model embodiment 3.
Figure 10-11 is the structure diagram of the light emitting diode of the utility model embodiment 4.
Figure 12-13 is the structure diagram of the light emitting diode of the utility model embodiment 5.
Figure 14-15 is the structure diagram of the light emitting diode of the utility model embodiment 6.
Figure 16-17 is the structure diagram of the light emitting diode of the utility model embodiment 7.
Figure 18 is the structure diagram of the light emitting diode of the utility model embodiment 8.
Figure 19 is the interface reflecting effect figure between the electrode extension item of light emitting diode shown in Figure 18 and protective layer.
Figure 20 is the light effect of extracting figure of the electrode extension structure of light emitting diode shown in Figure 18.
Figure 21 is the structure diagram of the light emitting diode of the utility model embodiment 9.
Figure 22 is the structure diagram of the light emitting diode of the utility model embodiment 10.
Figure 23 is the structure diagram of the light emitting diode of the utility model embodiment 11.
Figure 24 is the structure diagram of the light emitting diode of the utility model embodiment 12.
Figure 25 is the structure diagram of the light emitting diode of the utility model embodiment 13.
Figure 26 is the structure diagram of the light emitting diode of the utility model embodiment 14.
Figure 27 is the structure diagram of the light emitting diode of the utility model embodiment 15.
Figure 28 is the structure diagram of the light emitting diode of the utility model embodiment 16.
Figure 29 is the structure diagram of the light emitting diode of the utility model embodiment 17.
Figure 30 is the structure diagram of the light emitting diode of the utility model embodiment 18.
Figure 31 is the structure diagram of the light emitting diode of the utility model embodiment 19.
Specific embodiment
The embodiment of the utility model is described in detail below with reference to accompanying drawings and embodiments, whereby to the utility model
How applied technology method solves technical problem, and the realization process for reaching technique effect can fully understand and implement according to this.
If it should be noted that do not form conflict, each feature in each embodiment and each embodiment in the utility model
It can be combined with each other, the technical solution formed is within the protection scope of the utility model.
Embodiment 1
As shown in figure 3, a kind of light emitting diode, including：Substrate 201, N-type layer 211, luminescent layer 212, P-type layer 213, thoroughly
Bright conductive layer 220, semiconductor cap layer 230, first electrode 241, second electrode 242.
Specifically, substrate 201, which is chosen, includes but not limited to sapphire, aluminium nitride, gallium nitride, silicon, silicon carbide, surface
Structure can be planar structure or patterning graph structure；N-type layer 211 is formed in Sapphire Substrate 201；Luminescent layer 212 is formed in N
On type layer 211；P-type layer 213 is formed on luminescent layer 212；Transparency conducting layer 220 is formed in P-type layer 213；Semiconductor protection
Layer 230 is formed on transparency conducting layer 220；First electrode 241 and second electrode 242 are formed on semiconductor cap layer 230.Fig. 4
Showing the vertical view of light emitting diode shown in Fig. 3, wherein first electrode 241 is made of pad 243 and extension item 244, and second
Electrode 242 is made of pad 245 and extension item 246.
Please referring back to Fig. 3 and Fig. 4, transparency conducting layer 220 forms first in the 243 corresponding position of pad of first electrode and opens
Mouth 251, semiconductor cap layer 230 forms the second opening 252 in the 243 corresponding position of pad of first electrode, in first electrode
Extension item 244 cope with position formed third opening 253, expose transparency conducting layer 220.Specifically, the second opening 252 is
Cyclic structure, the cricoid inner ring 252a diameters D2 are less than the diameter D1 of the first opening 252, and outer ring 252b diameters D3 is more than first
The diameter D1 of opening 251.Fig. 4 shows that the pad area of first electrode forms the partial enlarged view before electrode simultaneously, can from figure
Find out, the surface that the pad area of first electrode exposes at this time is followed successively by semiconductor cap layer 230, transparent electric layer layer from outside to inside
221st, P-type layer 213a and semiconductor cap layer 231, the pad 243 of the first electrode formed above it at this time can simultaneously and p-type
Layer 213a, transparency conducting layer 220, semiconductor cap layer 230 contact.243 lower section of welding disk of first electrode, which has, at this time partly leads
Body protective layer 231 is used as current barrier layer, and when energized, most of electric current is saturating by 253 injection of third opening by extension item 244
Bright conductive layer 220, fraction electric current inject transparency conducting layer 220 by the position 221 of the contact transparency conducting layer of welding disk 244,
And inject light emitting epitaxial layer after transparency conducting layer 220 is extended.
230 material of semiconductor cap layer can select SiO2Or Si3N4Or Al2O3Or TiO2, select in the present embodiment
SiO2.In the present embodiment, on the one hand semiconductor cap layer 230 protects LED surface, is on the other hand hindered as electric current
Barrier, the electric current for inhibiting base part cross injection, increase the current spread of transparency conducting layer, therefore its thickness need to take into account two
The requirement of person, therefore its thickness d is λ/4n × (2k-1), emission wavelengths of the wherein λ for institute's luminescent layer 212, n is the folding of protective layer
Rate is penetrated, k is more than 1 natural number, and preferably, k takes 2 ~ 3, and corresponding thickness is preferred for 150nm ~ 500nm, when thickness is too small
When, ratio was less favorable for playing current barrier layer and protective effect, and material absorbs in itself when thickness is excessive can additionally increase light loss
It loses.
In the present embodiment, light emitting epitaxial layer formed table top and it is a series of through P-type layer 213, luminescent layer 212 through-hole
256, expose the part surface of N-type layer 211, semiconductor cap layer 230 covers the side wall of the through-hole 256, transparency conducting layer 220
Side wall and mesa surfaces between table top, and the 4th opening 254 is reserved at table top, second electrode 242 is produced on semiconductor guarantor
On the surface of sheath 230, wherein welding disk 245 is contacted by the 4th opening 254 with N-type layer, and extension item 246 passes through through-hole 256
It is contacted with N-type layer 211.
Further, the preferably transparent dielectric material of semiconductor cap layer 230 described in the present embodiment, the extension item with electrode
Full-shape speculum is may be constructed, improves the reflection efficiency at metal-dielectric interface, reduces absorption loss of the metal to light.
In the present embodiment, on the one hand the protective layer of above-mentioned light emitting diode protects light emitting diode not to be damaged, another
Aspect again can be directly as current barrier layer, and the electric current for inhibiting base part crosses injection, increases the electric current of transparency conducting layer
Diffusion；First electrode directly and semiconductor layer, the adhesiveness being effectively increased between electrode and epitaxial layer, can be reduced and be beaten in pad area
The risk that electrode comes off with attachment interface during line；The welding disk of first electrode can effectively buffer bonding wire using the design of many places step
Impact force reduces impact and damage of the wire bonding process to first electrode pad；The extension item of second electrode is positioned at protective layer
On, and by the way that borehole is protected to be contacted with transparency conducting layer so that the extension item of first electrode forms the shape of upper and lower wave,
Increase the angle of light outgoing at extension item, promote light extraction efficiency.
Embodiment 2
Present embodiment discloses a kind of production methods of light emitting diode, mainly include mesa etch（MESA）, make
Transparency conducting layer makes semiconductor cap layer, makes four technique of electrode, and Fig. 5 shows that this four technique is related to corresponding to respectively
Mask pattern.It is briefly described with reference to Fig. 5-8.
First, light emitting epitaxial layer structure is provided, generally comprises substrate 201, N-type layer 211, luminescent layer 212, P-type layer
213。
Then, the pattern with reference to shown in (a) of Fig. 5, the first region and second are defined on the surface of light emitting epitaxial layer
Electrode district, removal eat dishes without rice or wine region, to form the table top 210 of second electrode and a series of through-holes 256, as shown in Figure 6；
Then, the pattern with reference to shown in (b) of Fig. 5, transparency conducting layer is made in the P-type layer 213 of light emitting epitaxial layer
220, etching removal is eated dishes without rice or wine region, is formed opening 251 in the pad area of the first region, is formed in 255 corresponding position of through-hole
Opening 257, as shown in Figure 7；
Then, the pattern with reference to shown in (c) of Fig. 5 makes semiconductor cap layer 230 on transparency conducting layer 220, it goes
Except region of eating dishes without rice or wine, which covers side wall and platform between the side wall, transparency conducting layer 220 and table top of through-hole 256 simultaneously
210 surface of face, the first region pad area formed opening 252, the expansion area of the first region formed opening 253,
Opening 254 is formed on table top 210, opening 255 is formed in the expansion area of second electrode.Preferably, opening 252 is cyclic structure,
The cricoid inner ring 252a diameters D2 is less than the diameter D1 of opening 252, and outer ring 252b diameters D3 is more than the diameter D1 of opening 251,
The surface that the pad area of first electrode exposes at this time is followed successively by semiconductor cap layer 230, transparent electric layer layer 221, p-type from outside to inside
Layer 213a and semiconductor cap layer 231, as shown in Figure 8；
Then, the pattern with reference to shown in (d) of Fig. 5 makes first electrode 241 and second on semiconductor cap layer 230
Electrode 242.Wherein the welding disk of first electrode 241 contacts simultaneously with P-type layer, transparency conducting layer, protective layer.
It should be strongly noted that the shape and size for opening 252 are not restricted to above description, it also can be direct
Acyclic portion, such as 231 structure of unprotect layer below the welding disk central part of first electrode in some implementations are formed, directly
It is contacted with P-type layer 213.In further embodiments, also opening 252 can be designed as a series of be distributed in around pad area
Feeler structure exposes transparency conducting layer, and pad area does not form hatch frame, and the welding disk of first electrode is formed completely at this time
On protective layer 230, the feeler can be connected to by metal lead wire.
Embodiment 3
The structure diagram of another light emitting diode of Fig. 9 displays.Embodiment 1 is different from, described in the present embodiment
In light emitting diode construction, the diameter dimension D1 of the second opening 252 is greater than or equal to the diameter dimension D1 of the first opening, and at this time the
243 lower section of pad of one electrode 241 directly contacts, at this time the pad of first electrode without semiconductor cap layer with P-type layer 213
Directly and semiconductor contact, and adhesion is good between electrode and GaN interfaces, can reduce routing first electrode and attachment interface in portion
The risk to come off.
Embodiment 4
Figure 10-11 shows the structure diagram of another light emitting diode.It is different from embodiment 1, the present embodiment
In the light emitting diode construction, the second opening 252 is annular in shape, has at least one to far from pad area direction extension
The number of feeler 252c, feeler 252c are differed for 1 ~ 20.The welding disk 243 of first electrode is led by feeler 252c with transparent
Electric layer contacts, and can so increase the welding disk of first electrode and the contact area of transparency conducting layer, be conducive to the diffusion of electric current, from
And alleviate the electric current congestion effect on the welding disk and extension item of first electrode, reduce the risk of metal precipitation and electrode burn.
Embodiment 5
Figure 12-13 shows the structure diagram of another light emitting diode.It is different from embodiment 4, the present embodiment
In the light emitting diode construction, transparency conducting layer does not form opening, the pad of first electrode in the pad area of first electrode
Portion 243 is directly contacted with transparency conducting layer 221 and protective layer.
Embodiment 6
Figure 14-15 shows the structure diagram of another light emitting diode.It is different from embodiment 5, the present embodiment
In the light emitting diode construction, transparency conducting layer 220 forms the first opening in the 243 corresponding position of pad of second electrode
251, the opening 251 is between the second mouth periphery 252b and feeler 252c peripheries, the feeler 252c at the second 252 edges of opening
Beyond the welding disk 243 of first electrode.The welding disk 243 of first electrode by first opening 251 outside feeler 252c with it is transparent
Conductive layer contact can so reduce the welding disk of first electrode and the contact area of transparency conducting layer, reduce in wire bonding process thoroughly
The broken risk of bright conductive layer.Meanwhile the design of many places step, bonding wire impact force can be effectively buffered, reduces wire bonding process pair
The impact and damage of first electrode pad.
Embodiment 7
Figure 16-17 shows the structure diagram of another light emitting diode, and wherein Figure 16 shows semiconductor cap layer
230 pattern and the pattern of electrode.It is different from embodiment 1, in the light emitting diode construction described in the present embodiment, semiconductor
Protective layer 230 forms 257 structures of a series of opening around the pad area of first electrode, exposes transparency conducting layer 220, the
The welding disk of one electrode draws feeler 247 and is connected to the opening 257, and the number of feeler 252c is differed for 1 ~ 20.
It should be strongly noted that in some variant embodiments, transparency conducting layer 220 can not have to be formed in pad area
Hatch frame, in further embodiments, transparency conducting layer 220 and semiconductor cap layer 230 are equal in the pad area of first electrode
Opening is not formed, the welding disk 243 of first electrode is formed on protective layer completely at this time, no and transparency conducting layer 220 or p-type
Layer 213 contacts.
Embodiment 8
The diagrammatic cross-section that Figure 18 shows the vertical view of another light emitting diode and cut along A-A.It is different from implementation
Example 1, in the light emitting diode construction described in the present embodiment, transparency conducting layer 220 is in the opening 251 of first electrode pad area
With semiconductor cap layer in the size of the opening 252 of first electrode pad area as.In the present embodiment, the thickness of protective layer 220
Degree is preferably more than 200nm, and the sectional view that A-A is cut along Figure 18 can be seen that the welding disk upper surface 243 of first electrode is bright
The aobvious upper surface 244a less than 244 high portion of extension item.
It is reflected through bottom or side wall by the light that luminescent layer is sent out in light emitting diode construction shown in Fig. 1
Secondary light ray, which reaches the extension item 144 of P electrode and P-type layer interface, can generate Metal absorption, light extraction efficiency be caused to lose, simultaneously
The extension item 144 that the light returned by N electrode and N electrode through bottom multiple reflections reaches P electrode can also be generated with P-type layer interface
Metal absorption causes light extraction efficiency to lose.In embodiment, the 244 underface subregion of extension item of first electrode increases
Protective layer 230 designs, the protective layer preferably for transparent dielectric material, the extension item 244 of protective layer 230 and first electrode can be with
All-angle reflector is formed, Figure 19 shows the electrode of light emitting diode shown in Fig. 1 and the light emitting diode shown in the present embodiment
The reflection schematic diagram of item is extended, it is seen that item 244 is extended in the present embodiment forms omnidirectional reflection with protective layer 220
Mirror effectively improves the reflection efficiency at metal-dielectric interface, reduces absorption loss of the metal to light.
Further, the material of the semiconductor cap layer 220 can be that light dredges material（Relative to p type semiconductor layer, such as
GaN）, semiconductor cap layer is with refractive power effect at this time, as shown in figure 20, if the 244 section shading of extension item of first electrode is long
It spends for ab, the material with refractive power effect is used as protective layer 230,244 border of the extension item screening of first electrode in the present embodiment
Light length then shorten to ac.
Embodiment 9
The diagrammatic cross-section that Figure 21 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.In the present embodiment, transparency conducting layer
220 are less than semiconductor cap layer 230 and are opened in the pad area of first electrode in the size of the opening 251 of the pad area of first electrode
Mouth 252, the welding disk of first electrode contact simultaneously with the surface of P-type layer 213 and transparency conducting layer.
In the present embodiment, light emitting epitaxial layer formed table top and it is a series of through P-type layer 213, luminescent layer 212 through-hole
255, expose the part surface of N-type layer 211, semiconductor cap layer 230 covers the side wall of the through-hole 255, transparency conducting layer 220
Side wall and mesa surfaces between table top, and the 4th opening is reserved at table top, second electrode 242 is produced on semiconductor protection
On the surface of layer 230, wherein welding disk 245 is contacted by the 4th opening with N-type layer, and extension item 246 passes through through-hole 255 and N-type
Layer contact.
Specifically, second electrode extension item 246 in the centre of chip, connect by several through-holes 255 with n-layer
It touches, the upper surface of the extension item 246 of non-interconnected bore region is higher than the upper surface of the pad 243 of first electrode, design height difference model
Enclose for 50nm ~ 500nm, difference in height described in the present embodiment be recommended range, non-limiting condition；246 end of extension item of first electrode
End can end in covered through-hole shortest distance length, can also do appropriate extension, but can not be direct with the pad of first electrode
Contact, as shown in figure 21.
In the present embodiment, the extension item 246 of second electrode forms full-shape speculum with protective layer below, improves gold
The reflection efficiency of category-medium interface reduces absorption loss of the metal to light.Likewise, the material of protective layer can be dredged for light
Medium has refractive power effect, can effectively shorten the shading-area of second electrode extension item at this time, and principle can refer to embodiment 8
Figure 20 shown in.
Further, through-hole 255 of the extension bottom of second electrode equipped with perforation P-type layer, luminescent layer so that extension
Item forms the shape of upper and lower wave, increases the effective area of ITO, promotes light extraction efficiency.
Embodiment 10
The diagrammatic cross-section that Figure 22 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 9, this reality
The extension item 246 for applying the second electrode of example is contacted by a strip opening with N-type layer.
Embodiment 11
The diagrammatic cross-section that Figure 23 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 9, this reality
The extension item 246 for applying the second electrode of example uses two-row structure, as shown in the figure.
Embodiment 12
The diagrammatic cross-section that Figure 24 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 9, this reality
The extension item 246 of the second electrode of example is applied using two-row structure, and there is normal direction finger-cross structure, as shown in the figure.
Embodiment 13
The diagrammatic cross-section that Figure 25 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 9, this reality
The extension item 246 for applying the second electrode of example is adopted as closed circuit structure, and the wherein extension item 244 of first electrode is located at the second electricity
The inside of the extension item 246 of pole, as shown in the figure.
Embodiment 14
The diagrammatic cross-section that Figure 26 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 9, this reality
It applies a light emitting epitaxial layer and does not form table top, the pad 245 and extension item 246 of second electrode are connect by through-hole and N-type layer 211
It touches, the upper surface of the non-through bore region of the pad 245 of second electrode and extension item 246 is substantially flush at this time, is higher by the first electricity
The pad upper surface 243a of pole, as shown in the figure.
Specifically, one or more through-holes, the diameter of single through-hole and second can be equipped under the pad 245 of second electrode
The diameter of the pad of electrode is than preferably 1:2~1:20, the gross area of each through-hole account for the area 2% of the pad 245 of second electrode ~
60%, increase with the quantity in hole, hole accounting example also increases.
In the present embodiment, it is only connect in the pad bottom borehole of second electrode for contacting N-type, ITO can be effectively increased
Area, be conducive to electric current and preferably inject, while the pad major part region of second electrode is conducive on protective layer
The extraction of light.
Embodiment 15
The diagrammatic cross-section that Figure 27 shows the vertical view of another light emitting diode and cut along A-A, midship section show
Intention mainly illustrates the welding disk 243 of first electrode and the concrete structure of second electrode.It is different from embodiment 15, this reality
The second electrode extension item 246 for applying example uses two-way shape structure, and specially second electrode is distributed in the middle section of chip, wherein
Pad 245 is located at center, and extension item 246 is extended from pad to opposite both ends, as shown in the figure.
Embodiment 16
The diagrammatic cross-section that Figure 28 shows the vertical view of another light emitting diode and cut along A-A.It is different from implementation
Example 1, semiconductor cap layer 230 substantially completely covers the surface of light emitting diode in the present embodiment, only in the first electricity
244 lower section of extension item of pole forms opening 253（Grey fill part）, below the pad of second electrode formed through-hole 258,
The lower section of the extension item of second electrode forms through-hole 255.Therefore the pad of first electrode is formed directly on protective layer, passes through expansion
It opens up the opening 253 below item and injects transparency conducting layer 220.
In the present embodiment, the 245 underface center of pad of second electrode forms a through-hole 258, accounts for second
The 1% ~ 5% of electrode pad area, preferably, its size be less than or equal to extension item 246 lower section by 255 size.
In the present embodiment, the welding disk of first electrode and second electrode is essentially directly formed on protective layer, works as use
When silica is as semiconductor cap layer 230, with pad bottom（Generally reflecting layer）It, can be effective with good adhesiveness
Reduce the risk of bonding wire power down pole；Further, the extension bottom of second electrode is designed using borehole, can increase having for LED
Light-emitting area is imitated, and then promotes the efficiency of light extraction of chip.
Embodiment 17
The diagrammatic cross-section that Figure 29 shows the vertical view of another light emitting diode and cut along A-A.It is different from implementation
Example 16, the semiconductor cap layer 230 of 245 lower section of pad of second electrode form multiple through-holes 258, and each through-hole is in center
Symmetrical, what the gross area accounted for the bonding pad area of second electrode 2% ~ 50% is preferred.
Embodiment 18
The diagrammatic cross-section that Figure 30 shows the vertical view of another light emitting diode and cut along A-A.It is different from implementation
Example 16, the semiconductor cap layer 230 of 244 lower section of extension item of first electrode form a series of through-holes 253, expose transparent lead
The surface of electric layer 220.The transparency conducting layer 220 below first electrode pad, semiconductor cap layer 220 are respectively formed opening simultaneously
251st, 252, split shed 252 is annular in shape, which is less than the diameter of opening 252, and race diameter is more than opening
251 diameter, the pad 244 of first electrode simultaneously with the surface of P-type layer 213, the surface of transparency conducting layer 220 and protective layer
230 surface contact is in step-like, and sectional area from top to bottom successively decreases, and can effectively buffer bonding wire impact force, reduces wire bonding process
Impact and damage to first electrode pad.
Specifically, first electrode includes pad 243 and extension item 244, second electrode includes pad 245 and with extending item
246, the extension item 244 of first electrode is contacted by through-hole 253 with transparency conducting layer 220, and the extension item 246 of second electrode passes through
Through-hole 255 is contacted with N-type layer 211, at least one through-hole 253a leads to closest in continuous three through-hole 253a ~ 253c
The distance d3 of hole 255a is no more than the distance between the extension item 244 of first electrode and the extension item 246 of second electrode d4.At this
In embodiment, the extension item 244 of first electrode and the extension item 246 of second electrode are in parallel distribution, continuous three through-holes
The extension of line and first electrode in 253a ~ 253c between at least one through-hole 253a to immediate second through-hole 255a
Item is substantially vertical, the relationship of the spacing d2 between spacing d1 and adjacent two through-hole 253 between adjacent two through-holes 255
For：d2≈2d1.
Although in the light emitting diode shown in Figure 30, the pad 245 of second electrode is connect by through-hole 258 and N-type layer 211
It touches, it should be understood that the pad 253 of second electrode is not limited to such scheme.In some variant embodiments, the second electricity
The through-hole 258 of 246 lower section of pad of pole can be changed to circular opening structure, such as structure shown in Fig. 3；In some variant embodiments
In, the pad 255 of second electrode direct can not be contacted with N-type layer, i.e., the N-type of 255 lower section of pad is completely covered in protective layer 230
Layer, second electrode are contacted by extending the through-hole 255 of 246 lower section of item with N-type layer 211；In other variant embodiments, second
The pad 255 of electrode can be contacted directly with N-type layer 211, i.e., protective layer 230 does not cover the N-type layer of 255 lower section of pad.
Embodiment 19
The diagrammatic cross-section that Figure 31 shows the vertical view of another light emitting diode and cut along A-A.It is different from implementation
Example 16, the protective layer below the pad 244 of first electrode form configured openings 252, and the pad 245 of second electrode is direct
It is formed on N-type layer surface, below unprotect layer.
In the present embodiment, the expansion for being dimensioned slightly smaller than second electrode of the through-hole 253 of 244 lower section of extension item of first electrode
The through-hole 255 below item is opened up, in continuous four through-hole 253a ~ 253d, the through-hole 253a and 253d of only head and the tail have through-hole 255
It is corresponding, the pass of the spacing d2 between spacing d1 and adjacent two through-hole 253 between two adjacent at this time through-holes 255
It is to be：d2≈3d1.
It should be noted that embodiment of above is merely to illustrate the utility model, and it is new to be not intended to limit this practicality
Type, those skilled in the art in the case where not departing from the spirit and scope of the utility model, can do the utility model
Go out various modifications and variation, therefore all equivalent technical solutions also belong to the scope of the utility model, the utility model it is special
Sharp protection domain should regard Claims scope and limit.
Claims (10)
1. light emitting diode, including：
Light emitting epitaxial layer includes the first semiconductor layer, luminescent layer and the second semiconductor layer, upper surface and is equipped with successively from top to bottom
The first region, it includes pad areas and expansion area；
Transparency conducting layer is formed on the surface of the first semiconductor layer of the light emitting epitaxial layer；
Protective layer is formed on the surface of the transparency conducting layer, and a series of first is formed around the pad area and is opened
Mouthful, the second opening is formed in expansion area, exposes the surface of the transparency conducting layer；
First electrode is formed on the protective layer, and weldering is connected respectively comprising pad, extension item and feeler, the feeler both ends
Disk and the first opening, the extension item are connect by the second opening with the transparency conducting layer.
2. light emitting diode according to claim 1, it is characterised in that：The protective layer is equipped with annular in the pad area
Third hatch frame.
3. light emitting diode according to claim 2, it is characterised in that：The transparency conducting layer is equipped in the pad area
4th hatch frame.
4. light emitting diode according to claim 3, it is characterised in that：The inner ring diameter of the third opening is less than described
The diameter of 4th opening, race diameter are more than the diameter of the described 4th opening.
5. light emitting diode according to claim 3, it is characterised in that：The diameter of 4th opening is open more than third
Outer diameter diameter, less than first opening inside tangential circle diameter.
6. light emitting diode according to claim 1, it is characterised in that：The pad simultaneously with the protective layer, transparent
Conductive layer contact.
7. light emitting diode according to claim 1, it is characterised in that：The upper surface of the light emitting epitaxial layer is additionally provided with
Two electrode districts, the second electrode area form table top, expose the part surface of second semiconductor layer, the protective layer is simultaneously
It covers the surface of the table top and forms the 5th hatch frame.
8. light emitting diode according to claim 7, it is characterised in that：Second electrode is further included, is formed in the guarantor
On sheath, and pass through the 5th hatch frame and contacted with the surface of second semiconductor layer.
9. light emitting diode according to claim 1, it is characterised in that：The number of the feeler is 1 ~ 20.
10. light emitting diode according to claim 1, it is characterised in that：The thickness d of the protective layer is λ/4n × (2k-
1), wherein λ is the emission wavelength of the luminescent layer, and n is the refractive index of protective layer, and k is more than 1 natural number.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721327854.6U CN207542268U (en) | 2017-10-16 | 2017-10-16 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721327854.6U CN207542268U (en) | 2017-10-16 | 2017-10-16 | Light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN207542268U true CN207542268U (en) | 2018-06-26 |
Family
ID=62609186
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721327854.6U Active CN207542268U (en) | 2017-10-16 | 2017-10-16 | Light emitting diode |
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| Country | Link |
|---|---|
| CN (1) | CN207542268U (en) |
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2017
- 2017-10-16 CN CN201721327854.6U patent/CN207542268U/en active Active
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