CN207489906U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN207489906U CN207489906U CN201820090382.5U CN201820090382U CN207489906U CN 207489906 U CN207489906 U CN 207489906U CN 201820090382 U CN201820090382 U CN 201820090382U CN 207489906 U CN207489906 U CN 207489906U
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Abstract
The utility model discloses a kind of light emitting diodes.In some embodiments, which includes：Light emitting epitaxial layer includes the first semiconductor layer, luminescent layer and the second semiconductor layer successively from top to bottom；Protective layer is formed in the light emitting epitaxial layer, equipped with a series of openings as conductive channel；First electrode is electrically connected including being formed on the protective layer, and with first semiconductor layer；Second electrode is formed on the protective layer, and is electrically connected with second semiconductor layer；The first electrode has welding disk and extension, wherein the upper surface of the extension is in high and low shape.
Description
Technical field
The utility model is related to semiconductor element, more particularly, to a kind of light emitting diode.
Background technology
Since light emitting diode has the advantages that long lifespan, small, high vibration strength, fever degree are small and power consumption is low etc.,
Light emitting diode has been widely used in the indicator light or light source of household appliances and various instrument.
The gallium nitride based LED chip fabrication technique of early stage is usually by mesa etch (MESA), making transparency conducting layer（Such as
ITO）, make electrode and make protective layer four technique composition, the light-emitting diode chip for backlight unit formed is as shown in Figure 1, it is general
Including substrate 101, N-type layer 111, luminescent layer 112, P-type layer 113, transparency conducting layer 120, P electrode 141 (pad 143 and extension
Item 144), N electrode 142 and protective layer 130.In gallium nitride based LED, p-GaN is relatively low due to its carrier mobility, it will usually
PAD causes bottom certain electric current congestion.Therefore, it typically now can increase current barrier layer 150 in the bottom of P-type electrode, use
In crossing for electric current is inhibited to inject, increase the current spread of transparency conducting layer, as shown in Figure 2.The chip fabrication technique is typically at least
Including mesa etch (MESA), make current barrier layer, making current extending（Such as ITO）, make electrode and make protection
Five technique of layer.
Utility model content
The utility model provides a kind of light emitting diode, forms protective layer and makes electrode structure again, effectively improves hair
The light extraction efficiency and reliability of optical diode.
The technical solution of the utility model is：A kind of light emitting diode, including：Light emitting epitaxial layer wraps successively from top to bottom
Include the first semiconductor layer, luminescent layer and the second semiconductor layer；Protective layer is formed on the light emitting epitaxial layer, equipped with a system
Row opening is as conductive channel；First electrode is formed including being formed on the protective layer, and with first semiconductor layer
It is electrically connected；Second electrode is formed on the protective layer, and is electrically connected with second semiconductor layer；It is described
First electrode has welding disk and extension, wherein the upper surface of the extension is in high and low undulated.
Preferably, the thickness of the protective layer is λ/4n × (2k-1), and wherein λ is the emission wavelength of the luminescent layer, and k is
More than 1 natural number, n are the refractive index of protective layer.
Preferably, it is equipped with protective layer, transparency conducting layer and insulating layer successively below the extension of the first electrode.
Preferably, the insulating layer below the extension of the first electrode is made of a series of block structures, the bulk
It is separated from each other between structure.
Preferably, there are three above different height for the extension upper surface tool of the first electrode.
Preferably, the portion lower surface of the welding disk of the first electrode is directly contacted with first semiconductor layer.
Preferably, the protective layer forms opening below the welding disk of the first electrode, and area is less than described state
The area of the welding disk of first electrode.
Preferably, the lower surface of the welding disk of the first electrode connects simultaneously with the protective layer and the first semiconductor layer
It touches.
Preferably, the welding disk upper surface of the first electrode is in step-like.
Preferably, the welding disk upper surface intermediate region of the first electrode forms groove structure, which has
At least two-stage step.
The utility model at least has the advantages that：
（1）Above-mentioned light emitting diode is initially formed protective layer over transparent conductive layer, re-forms electrode, and the protective layer is on the one hand
Light emitting diode is protected not to be damaged, on the other hand can be used for again with current barrier layer together as Combined type electric flow barrier
The electric current of base part is inhibited to cross injection, increases the current spread of transparency conducting layer；
（2）Structure design below first electrode extension so that electrode extension upper surface is distributed in high and low rise and fall,
Later stage pour mask can be reduced, transport and shift etc. during extend the damage of item.
Other features and advantages of the utility model will illustrate, also, in the following description partly from specification
In become apparent or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and is obtained in specification, claims and attached drawing.
Although the utility model, this field skill are described hereinafter in connection with some exemplary implementations and application method
Art personnel should understand that, it is no intended to which the utility model is limited to these embodiments.It is on the contrary, it is intended to which that covering is included in appended
All substitutes, amendment and equivalent in the spirit and scope of the utility model as defined in the claims.
Description of the drawings
Attached drawing is used to provide a further understanding of the present invention, and a part for constitution instruction, with this practicality
New embodiment for explaining the utility model, does not form the limitation to the utility model together.In addition, attached drawing data are to retouch
Summary is stated, is not drawn to scale.
Fig. 1 is the structure diagram of existing light emitting diode.
Fig. 2 is the structure diagram of another existing light emitting diode.
Fig. 3-5 is the structure diagram of the light emitting diode of the utility model embodiment 1.
Fig. 6 shows the LED chip reflectivity comparison diagram of three kinds of different electrode structures.
Fig. 7 is the partial enlarged view of the first electrode of light emitting diode shown in Fig. 4.
Fig. 8 is the light shield figure for making light emitting diode shown in Fig. 3.
The structure diagram of Fig. 9 and the light emitting diode of 10 the utility model embodiments 2.
Figure 11-12 is the structure diagram of the light emitting diode of the utility model embodiment 3.
Figure 13 is the partial enlarged view of the first electrode of light emitting diode shown in Figure 12.
Figure 14-15 is the structure diagram of the light emitting diode of the utility model embodiment 4.
Figure 16 is the partial enlarged view of the first electrode of light emitting diode shown in Figure 15.
Figure 17-18 is the structure diagram of the light emitting diode of the utility model embodiment 5.
Figure 19 is the structure diagram of the light emitting diode of the utility model embodiment 6.
Figure 20-21 is the structure diagram of the light emitting diode of the utility model embodiment 7.
Figure 22 is the partial enlarged view of the first electrode of light emitting diode shown in Figure 21.
Figure 23 is the light shield figure of light emitting diode shown in Figure 21.
Figure 24 is the structure diagram of the light emitting diode of the utility model embodiment 8.
Figure 25 is the partial enlarged view of the first electrode of light emitting diode shown in Figure 24.
Figure 26 is the structure diagram of the light emitting diode of the utility model embodiment 9.
Figure 27 is the partial enlarged view of the first electrode of light emitting diode shown in Figure 26.
Figure 28-29 is the structure diagram of the light emitting diode of the utility model embodiment 10.
Figure 30 is the light shield figure of light emitting diode shown in Figure 29.
Figure 31 is the structure diagram of the light emitting diode of the utility model embodiment 11.
Figure 32 is the structure diagram of the light emitting diode of the utility model embodiment 12.
Figure 33 is the light shield figure of the insulating layer of light emitting diode shown in Figure 32.
Figure 34-35 is the structure diagram of the light emitting diode of the utility model embodiment 10.
Figure 36 is the partial enlarged view of the second electrode of light emitting diode shown in Figure 35.
Figure 37 is showing the LED chip reflectivity comparison diagram of three kinds of different electrode structures.
Specific embodiment
The embodiment of the utility model is described in detail below with reference to accompanying drawings and embodiments, whereby to the utility model
How applied technology method solves technical problem, and the realization process for reaching technique effect can fully understand and implement according to this.
If it should be noted that do not form conflict, each feature in each embodiment and each embodiment in the utility model
It can be combined with each other, the technical solution formed is within the protection scope of the utility model.
It should be appreciated that purpose rather than purport of the term used in the utility model merely for description specific embodiment
In limitation the utility model.As used in the utility model, singulative "a", "an" and "the" is also intended to including multiple
Number form formula, in addition to context clearly illustrates.It is to be further understood that when using term "comprising", " packet in the utility model
Include ", " containing " when, for showing the feature of statement, entirety, step, operation, the presence of element, and/or packaging part, without arranging
Except the presence or increase of other one or more features, entirety, step, operation, element, packaging part, and/or combination thereof.
Unless defined otherwise, all terms used in the utility model（Including technical terms and scientific terms）Have
The meaning identical with the meaning that the utility model those of ordinary skill in the art are generally understood.It is to be further understood that this
Term used in utility model should be understood to have with these terms in the context and related field of this specification
Meaning consistent meaning, and should not being understood with the meaning of idealization or too formal, except in the utility model clearly so
Except definition.
Embodiment 1
Referring to Fig. 3-5, wherein Fig. 3 shows the vertical view of the light emitting diode of first preferred embodiment of the utility model
Figure, Fig. 4 is the side sectional view splitted along the line A-A of Fig. 3, and Fig. 5 is the side sectional view splitted along the line B-B of Fig. 3.This shines
Diode includes：Substrate 201, N-type layer 211, luminescent layer 212, P-type layer 213, insulating layer 221, transparency conducting layer 230, protective layer
222nd, first electrode 241, second electrode 242.Wherein first electrode 241 includes pad 243 and extension 244, second electrode 242
Including pad 245 and extension 246.
Specifically, substrate 201, which is chosen, includes but not limited to sapphire, aluminium nitride, gallium nitride, silicon, silicon carbide, surface
Structure can be planar structure or patterning graph structure；N-type layer 211 is formed in Sapphire Substrate 201；Luminescent layer 212 is formed in N
On type layer 211；P-type layer 213 is formed on luminescent layer 212；The table top of second electrode is formed in P-type layer 213 and a series of is passed through
Wear P-type layer 213, luminescent layer 212 through-hole 254, expose the part surface of n-layer 211, insulating layer 221 is formed in P-type layer
On 213, the lower section of 241 position of first electrode is distributed in, transparency conducting layer 230 is formed in P-type layer 213, and is covered exhausted
Edge layer 221, protective layer 222 are formed on transparency conducting layer 230, while are covered the upper surface of the table top and connected the table top and P
Side wall between 213 upper surface of type layer substantially covers the surface of entire device, and forms opening in the corresponding position of electrode
251st, 252,254 and 255；First electrode 241 and second electrode 242 formed on semiconductor cap layer 222, wherein first electrode
Welding disk 243 and extension 244 are contacted respectively by opening 252,251 with transparency conducting layer, the welding disk of second electrode 245
On table top, 255 contacted by cricoid opening with N-type layer, the extension 246 of second electrode be formed at P-type layer it
On protective layer on, contacted by through-hole 254 with N-type layer 211.
In the present embodiment, insulating layer 221 is in block distribution, is made of the block structure of series of discrete, first electrode
The lower section of extension 244 there is protective layer 222, transparency conducting layer 230, insulating layer 221, P-type layer 213 successively.Wherein insulating layer
221 and the material of protective layer 223 be preferably all low-refraction insulating materials, preferred index is for 1.5 hereinafter, its material can be
It is the same or different.Protective layer 222 forms opening 251 below the extension of first electrode 244.In this reality
It applies in example, which is staggered with insulating layer 221, and 244 upper surface of extension of corresponding first electrode is in step-like, is had
First terrace 244A, second step face 244B and third step surface 244C.Light emitting diode described in the present embodiment is first
244 lower section of extension of electrode forms insulating layer 221 as current barrier layer, can inhibit below first electrode extension
Electric current cross injection, increase the length and uniformity of electric current injection；Protective layer 222 is initially formed on transparency conducting layer 220, then
Electrode 244 is formed, the probability that active metal is aoxidized in electrode structure in protective layer manufacturing process can be reduced；Insulating layer 221
With the design of protective layer 222, the metal that electrode and its expansion area can be reduced using refractive power effect is in the light area, promotes taking for LED
Light efficiency；Further, insulating layer 221, transparency conducting layer 220, protective layer 222,244 four-layer structure of electrode extension can be with shapes
Corner reflector is helped, so as to improve the albedo of electrode and its expansion area, reduces extinction efficiency.Fig. 6 shows three kinds of differences
The LED chip reflectivity comparison diagram of electrode structure, wherein comparative example 1 are LED chip shown in Fig. 1, and comparative example 2 is LED shown in Fig. 2
Chip, as can be seen from Figure the overall reflective ability of the LED structure described in the present embodiment be substantially better than the anti-of other two kinds of structures
Penetrate ability.
222 material of protective layer can select SiO2、Si3N4、Al2O3、TiO2Deng selecting SiO in the present embodiment2.This reality
It applies in the example light emitting diode construction, on the one hand protective layer 222 protects LED surface, on the other hand hindered as electric current
Barrier, the electric current for inhibiting base part cross injection, increase the current spread of transparency conducting layer, consider to take into account wanting for the two
It asks, thickness d is preferably λ/4n × (2k-1), emission wavelengths of the wherein λ for institute's luminescent layer 212, and n is the refractive index of protective layer, k
For more than 1 natural number, the preferable value of k is 2 ~ 3, and corresponding thickness is preferred for 150nm ~ 500nm.When the thickness mistake of protective layer
Hour ratio is less favorable for playing current barrier layer and protective effect, and material absorbs in itself when thickness is excessive can additionally increase light loss
It loses.
Fig. 7 shows the partial enlarged view of first electrode 242, and transparency conducting layer 230 is corresponded in the pad 243 of first electrode
Position form opening 253, form insulating layer 221A in the opening 253, diameter be preferably smaller than be open 253 diameter, protect
Sheath 222 forms opening 252 in the 243 corresponding position of pad of first electrode, in 244 corresponding position of the extension of first electrode
It puts to form opening 251, exposes transparency conducting layer 230.Specifically, opening 252 is cyclic structure, the inner ring of definition opening 252
A diameter of D1, race diameter D2, the 253 a diameter of D4 that is open, the insulating layer 221A of the lower section of welding disk 244 a diameter of D3,
Four relationship is preferably：D2>D4>D1>D3.It is seen that the surface that the pad area of first electrode exposes at this time is by outer
Protective layer 222, transparent electrode layer 230, P-type layer 213 and protective layer 222, the first electrode formed above it are followed successively by interior
Welding disk 243 can simultaneously be contacted with P-type layer 213, transparency conducting layer 230, protective layer 222, the welding disk 243 of the first electrode
Upper surface is in step-like.The protective layer 222 of 243 lower section of welding disk of first electrode is as current barrier layer, when energized, big portion
Electric current is divided to inject transparency conducting layers 230 by opening 251 by extension 244, fraction electric current is transparent by the contact of welding disk 244
The position 230A injection transparency conducting layers 230 of conductive layer, and inject light emitting epitaxial layer after transparency conducting layer 230 is extended.
In a deformation, insulating layer 221A is not formed in opening 253, protective layer 222 directly fills the opening 253 at this time；Another
In a deformation, insulating layer 221 is not formed in opening 253, is open 252 as cavernous structure, 243 center of welding disk of first electrode
Lower section naked layer 221 and protective layer 222, directly contact with P-type layer 213, can so increase the welding disk 243 of first electrode
With the contact area of P-type layer 213, and adhesion is good between electrode and nitride interface, when can reduce routing first electrode with
The risk that attachment interface comes off.
More preferably, Fig. 3 is please referred to, the opening 252 that protective layer 222 is located at 243 lower section of welding disk of first electrode can have
There is at least one feeler 252c extended to the direction far from the welding disk 243, the number of feeler is differed for 1 ~ 20.First electricity
The welding disk 243 of pole is contacted by feeler 252c with transparency conducting layer 230, can increase the welding disk of first electrode with it is transparent
The contact area of conductive layer is conducive to the diffusion of electric current, is gathered around so as to alleviate the welding disk of first electrode and extend the electric current on item
Stifled effect reduces the risk of metal precipitation and electrode burn.
In the present embodiment, on the one hand the protective layer of light emitting diode protects light emitting diode not to be damaged, on the other hand
Again can be directly as current barrier layer, the electric current for inhibiting base part crosses injection, increases the current spread of transparency conducting layer；
First electrode is directly contacted in pad area with semiconductor layer, the adhesiveness being effectively increased between electrode and epitaxial layer, can be reduced and be beaten
The risk that electrode comes off with attachment interface during line；The welding disk of first electrode can effectively buffer bonding wire using the design of many places step
Impact force reduces impact and damage of the wire bonding process to first electrode pad；The extension of first electrode is located at the upper of protective layer,
And by being contacted in protective layer trepanning with transparency conducting layer so that the extension item of first electrode forms the upper and lower step for playing shape
Shape increases the angle of light outgoing at extension item, promotes light extraction efficiency, simultaneously because the extension of electrode has high step and low
Step, which rises and falls, to be distributed, it is possible to reduce the contact area of electrode and other objects effectively reduces later stage pour mask, transports and shift
The damage of electrode extension in the process, while reduce the dirty of electrode extension.
The production method of aforementioned light emitting diode mainly includes mesa etch（MESA）, make insulating layer 221, make it is transparent
Conductive layer 230 makes protective layer 222, makes five technique of electrode, and Fig. 8 shows that this five technique is related to corresponding light
Cover pattern, is briefly described below.
First, light emitting epitaxial layer structure is provided, generally comprises substrate 201, N-type layer 211, luminescent layer 212, P-type layer
213。
Then, the pattern with reference to shown in (a) of Fig. 8, the first region and second are defined on the surface of light emitting epitaxial layer
Electrode district, removal eat dishes without rice or wine region, to form the table top 210 of second electrode and a series of through-holes 254；
Then, the pattern with reference to shown in (b) of Fig. 8 makes insulating layer 221 in the P-type layer 213 of light emitting epitaxial layer,
In block distribution；
Then, the pattern with reference to shown in (c) of Fig. 8, transparency conducting layer is made in the P-type layer 213 of light emitting epitaxial layer
230, etching removal mesa region, and form opening 253, in 254 corresponding position shape of through-hole in the pad area of the first region
Into opening；
Then, the pattern with reference to shown in (d) of Fig. 8 makes protective layer 222, the protective layer on transparency conducting layer 230
222 cover 210 surface of side wall and table top between the side wall, transparency conducting layer 230 and table top 210 of through-hole 254 simultaneously, first
The pad area of electrode district forms opening 252, forms opening 251 in the expansion area of the first region, and opening is formed on table top 210
255, form opening 254 in the expansion area of second electrode.Preferably, opening 252 is cyclic structure, the cricoid inner ring diameter D1
It is more than the diameter D4 of opening 253 less than the diameter D4 of opening 253, race diameter D2, the pad area of the first region exposes at this time
Surface be followed successively by protective layer 222, transparency conducting layer 230, P-type layer 213 and protective layer 222 from outside to inside；
Then, the pattern with reference to shown in (e) of Fig. 8 makes first electrode 241 and second electrode on protective layer 222
242.Wherein the welding disk 243 of first electrode 241 contacts simultaneously with P-type layer 213, transparency conducting layer 230, protective layer 222.
It should be strongly noted that the shape and size for opening 252 are not restricted to above description, it also can be direct
Acyclic portion, such as 231 structure of unprotect layer below the welding disk central part of first electrode in some implementations are formed, directly
It is contacted with P-type layer 213.In further embodiments, also opening 252 can be designed as a series of be distributed in around pad area
Feeler structure exposes transparency conducting layer, and pad area does not form hatch frame, and the welding disk of first electrode is formed completely at this time
On protective layer 222, the feeler can be connected to by metal lead wire.
Embodiment 2
The structure diagram of another light emitting diode of the displays of Fig. 9 and 10, wherein Fig. 9 are vertical view, and Figure 10 is along Fig. 9's
The sectional view that line A-A is cut.It is different from embodiment 1, in the light emitting diode construction described in the present embodiment, first electrode
The insulating layer 221 of 241 lower sections links together, and so the electric current of base part can be avoided to inject completely, while by first electrode
The height of extension 244 is all raised, and the metal that electrode extension can be effectively reduced using refractive power effect is in the light area, so as to be promoted
The efficiency of light extraction of LED.
Embodiment 3
Figure 11-12 shows the structure diagram of another light emitting diode, and wherein Figure 11 is vertical view, and Figure 12 is along figure
The sectional view that 11 line A-A is cut.Embodiment 1 is different from, in the light emitting diode construction described in the present embodiment, first
244 lower section of extension of electrode, the wherein distribution Chong Die with the opening 251 of protective layer 222 of insulating layer 221, the area of insulating layer 221
Less than the area of opening 251.Figure 13 shows the partial enlarged view of the extension 244 of first electrode, and transparency conducting layer 230 is being opened
Gap is formed at mouth 251 between protective layer 222, the gap is filled in the extension 244 of first electrode, and one side first electrode exists
The position of insulating layer 221 forms nail pilework, increases the adhesion strength of electrode extension 244 and protective layer 222, prevents it from falling
It falls, on the other hand increases the extension 244 of first electrode and the contact area of transparency conducting layer 230, be conducive to the expansion of electric current
It dissipates, so as to alleviate the welding disk of first electrode and extend electric current congestion effect on item, reduces metal and be precipitated and electrode burn
Risk.
Embodiment 4
Figure 14-15 shows the structure diagram of another light emitting diode, and wherein Figure 14 is vertical view, and Figure 15 is along figure
The sectional view that 14 line A-A is cut.Embodiment 3 is different from, in the light emitting diode construction described in the present embodiment, first
Below the extension of electrode, the area of insulating layer 221 is more than the area of opening 251.Figure 16 shows the extension of first electrode
244 partial enlarged view, in the position of insulating layer 221, the extension 244 of first electrode is in the side that protective layer 222 contacts
Pilework is followed closely, the adhesion strength of electrode extension and protective layer is increased, prevents it from falling；Design causes first by doing so simultaneously
The extension upper surface of electrode rises and falls in high step 244B, low step 244A to be distributed, and the area of high step 244B is much smaller than low
The area of step 244A, largely reduces the contact area of electrode and other objects, effectively reduce later stage pour mask, transport with
And the damage of item is extended during transfer etc., while reduce the dirty of extension.
Embodiment 5
Figure 17-18 shows the structure diagram of another light emitting diode.It is different from embodiment 3, the present embodiment
In the light emitting diode construction, the insulating layer 221 of 244 lower section of extension of first electrode is in non-uniform Distribution, to reach
Advanced optimize the purpose of current distribution.Specifically, in the position of the welding disk 243 close to first electrode, point of insulating layer 221
Cloth density is maximum, and as far from welding disk, density is less and less, and first close rear thin distribution is presented.
Embodiment 6
Figure 19 shows the structure diagram of another light emitting diode.Embodiment 3 is different from, described in the present embodiment
Light emitting diode construction in, the insulating layer of 244 lower section of the extension of first electrode is equally in non-uniform Distribution, to reach into one
The purpose of step optimization current distribution.A series of specifically, block that the insulating layer 221 below first electrode extension is not waited by areas
Shape structure 221a ~ 221d is formed, and in the position of the welding disk 243 close to first electrode, block structure 221a areas are maximum, and with
It far from welding disk, area is less and less, wherein the area of the block structure 221d farthest from welding disk 243 is minimum.
Embodiment 7
Figure 20 ~ 21 show the structure diagram of another light emitting diode, and wherein Figure 20 is vertical view, and Figure 21 is along figure
The sectional view that 20 line A-A is cut.It is different from embodiment 1, in the light emitting diode construction described in the present embodiment, the first electricity
221 structure annular in shape of insulating layer of 243 lower section of welding disk of pole, it is internal that there is opening 256, corresponding, transparency conducting layer 230
Opening 253 is formed, size is greater than or equal to the size of opening 256, and protective layer 222 forms opening 252 and 257, split shed
251 be cyclic structure, for exposing the part surface of transparent conductance layer 230 so that the welding disk 243 of first electrode can connect
Contact portion divides the surface of transparency conducting layer 230, and opening 257 is used to expose the surface of P-type layer so that the welding disk of first electrode
243 can contact the part surface of P-type layer 213, have cyclic structure 222A between two openings.Figure 22 shows first electrode
Welding disk 243 partial enlarged view, define transparency conducting layer 230 the opening 253 of welding disk a diameter of D4, ring-type insulation
The inner ring diameter of layer 221 for D5, race diameter D6, be open 257 a diameter of D7, this relationship is：D6>D4>D5>
D7, so that the centre contact P-type layer 213 of the welding disk 243 of first electrode, upper surface forms first in center
Groove structure 243A, and cricoid second groove structure 243B is formed around the first groove 243A, wherein the first groove structure
The depth of 243A is more than the depth of the second groove 243B, is conducive to subsequent routing, can form a similar nail pilework.
Figure 23 respectively illustrate the table top 210 of the light emitting diode shown in Figure 21, insulating layer 221, transparency conducting layer 230,
The mask pattern of protective layer 222 and electrode is different from mask pattern shown in Fig. 8, in the mask pattern of insulating layer 221, position
It is annular in shape in the insulating layer of the pad area of first electrode, there is opening 256, while in the mask pattern of protective layer 222, first
The center in electrode pad portion is formed centrally opening 257.
As a deformation of the present embodiment, protective layer 222 can in the opening 252 and 257 of the welding disk 243 of first electrode
To be combined into an opening, that is, the cyclic structure 222A between two openings is removed, welding disk 243 can simultaneously and protective layer at this time
222nd, transparency conducting layer 230, insulating layer 221 and P-type layer 213 contact, and the centre of upper surface can form a groove structure,
The groove structure can form two-stage step or even three-level step, equally be advantageous to the packaging and routing in later stage.
Embodiment 8
Figure 24 shows the structure diagram of another light emitting diode, and corresponding vertical view can refer to attached drawing 11.Area
Not in embodiment 3, the light emitting diode construction described in the present embodiment, the thickness of insulating layer 221 is significantly greater than protective layer
222 thickness, the even greater than overall thickness of transparency conducting layer 230 and protective layer 222, preferably, when insulating layer and protective layer are
During same material, the thickness of insulating layer 221 is λ/4n × (2k) with the thickness difference of protective layer 222, and wherein λ is luminescent layer
212 emission wavelength, n are the refractive index of insulating layer, and k is more than 0 natural number.Such as in a specific embodiment, absolutely
The thickness of edge layer takes 300 ~ 1000nm, and the thickness of protective layer takes 100 ~ 250nm.
Figure 25 shows the partial enlarged view of the extension 244 of first electrode.It can be seen from the figure that it is insulated by thickening
On the one hand the thickness of layer 221 can increase the area of transparency conducting layer 230, so as to increase the extension 244 of first electrode
With the contact area of transparency conducting layer 230, be conducive to the diffusion of electric current, so as to alleviate on the welding disk of first electrode and extension item
Electric current congestion effect, reduce metal be precipitated and electrode burn risk；On the other hand in two adjacent insulating layer bulk knots
Groove structure can be formed between structure, increases the adhesive force of the extension 244 of first electrode, it is reduced and is taken off with attachment interface
The risk fallen.
Embodiment 9
Figure 26 shows the structure diagram of another light emitting diode, and corresponding vertical view can refer to attached drawing 11.Area
Not in embodiment 8, the light emitting diode construction described in the present embodiment, the thickness of protective layer 222 is significantly thicker than insulating layer
221 thickness.Preferably, when insulating layer and protective layer are same material, thickness and the protective layer 222 of insulating layer 221
Thickness difference is λ/4n × (2k), and wherein λ is the emission wavelength of the luminescent layer, and n is the refractive index of protective layer, and k is more than 0
Natural number.Such as in a specific embodiment, the thickness of insulating layer takes 50 ~ 300nm, the thickness of protective layer takes 200 ~
2000nm。
Figure 27 shows the partial enlarged view of the extension 244 of first electrode.It can be seen from the figure that due to insulating layer
221 thickness is significantly less than the thickness of protective layer 222, below the extension of first electrode 244, the position of insulating layer and protection
The position overlapping of the opening 251 of layer, so as to form a series of groove structures in 221 corresponding position of insulating layer, first electrode
The groove structure is filled in extension 244, so as to form nail pilework at the attachment interface with protective layer, significantly increases first
The adhesive force of the extension 244 of electrode reduces its risk to come off with attachment interface.
Embodiment 10
Figure 28 ~ 29 show the structure diagram of another light emitting diode, and wherein Figure 28 is vertical view, and Figure 29 is along figure
The sectional view that 28 line A-A is cut.Embodiment 1 is different from, in the light emitting diode construction described in the present embodiment, first
The underface of the welding disk 243 of electrode forms the first insulation division 221A, while is centrally formed around the underface of welding disk 243
Second insulation division 221B of circulating type separation, the quantity of the second insulation division 221B can be 2 ~ 50, be separated from each other, outer diameter can
To be more than the diameter of the welding disk 243 of first electrode, might be less that or the diameter of welding disk 243 equal to first electrode.
Figure 30 respectively illustrates the mask pattern of table top 210, insulating layer 221, transparency conducting layer 230, protective layer 222 and electrode, at this
In embodiment, opening 222 of the protective layer 222 below the welding disk of first electrode equally can with outwardly extending feeler 252C,
The feeler is located around the gap between the second insulation division 221B of formula separation in the present embodiment.
In light emitting diode construction described in the present embodiment, the second insulation division 221B of circulating type separation can increase by first
The fluctuating on 243 surface of welding disk of electrode, enhances the reliability of bonding wire, soldered ball is not easily to fall off or external force effect under be not easy to be pushed away
Fall.
Embodiment 11
Figure 31 shows the structure diagram of another light emitting diode, is different from embodiment 10, the present embodiment institute
In the light emitting diode construction stated, the connecting portion 243C between the welding disk 243 of first electrode and extension 244 is not exhausted with second
Edge 221B intersects, and can so ensure the position of welding disk 243 of first electrode than the connection between welding disk and extension
Locate the height of 243A, in subsequent wire bonding process, soldered ball not easy damaged connecting portion 243C can improve the stability of core particles.
It in the present embodiment, equally can be to extension with opening 222 of the protective layer 222 below the welding disk of first electrode
The feeler 252C stretched, in the present embodiment the feeler intersect with the second insulation division 221B that circulating type detaches.
Embodiment 12
Figure 32 shows the structure diagram of another light emitting diode, is different from embodiment 10, the present embodiment institute
It is heart-shaped in the underface of welding disk 243 in the lower section of the welding disk 243 of first electrode in the light emitting diode construction stated
The insulation division 221B detached into circulating type, 243 centre of welding disk of first electrode is in direct contact the surface of P-type layer 213.Figure
33 show the pattern of insulating layer 221.
In light emitting diode construction described in the present embodiment, the welding disk 243 of one side first electrode is directly and P-type layer
213 contacts increase the adhesiveness of welding disk and epitaxial layer, on the other hand, in 243 upper surface of welding disk of the first electrode of formation
Between region form a groove 243B with step, this structure is very beneficial for subsequently carrying out routing.
Embodiment 13
Figure 34 ~ 35 show the structure diagram of another light emitting diode, and wherein Figure 34 is vertical view, and Figure 35 is along figure
The sectional view that 34 line A-A is cut.It is different from embodiment 1, in the light emitting diode construction described in the present embodiment, insulating layer
221 are formed simultaneously the lower section in first electrode 241 and second electrode 242, which is equally presented discrete bulk point
Cloth.
Figure 36 shows the partial enlarged view of the extension 256 of second electrode, and the extension 246 of second electrode is formed in guarantor
On sheath 222,222 lower section of protective layer has transparency conducting layer 230, insulating layer 221 and P-type layer 213, and pass through a series of successively
Through-hole 254 is connected with N-type layer 211, and 245 lower section of welding disk of second electrode equally has protective layer 222 and insulating layer 221.
It in the present embodiment, can be by changing the spacing of through-hole 254 or changing the size of through-hole 254, so as to improve electricity
The uniformity of crowded and electric current injection is flowed, promotes LED stability.
Light emitting diode construction described in the present embodiment forms insulating layer and protective layer by the lower section of middle second electrode, wherein
Insulating layer and protective layer select low-index material, and refractive index is preferably 1.5 hereinafter, increasing the thickness of low refractive index material layer
Degree so that its total reflection effect is more apparent, and total reflectivity increases.
Figure 37 shows the LED chip reflectivity comparison diagram of three kinds of different electrode structures, and wherein comparative example 1 is using the second electricity
The LED chip of naked layer and protective layer below pole, comparative example 2 is using matcoveredn 222, naked layer below second electrode
LED chip, wherein protective layer 222 use SiO2, thickness 230nm, embodiment 13 is had exhausted simultaneously using second electrode lower section
The LED chip of edge layer 221 and protective layer 222, two layers of equal SiO2, overall thickness 460nm.As can be seen from Figure described in the present embodiment
The overall reflective ability of LED structure is better than the albedo of other two kinds of structures.
It should be noted that embodiment of above is merely to illustrate the utility model, and it is new to be not intended to limit this practicality
Type, those skilled in the art in the case where not departing from the spirit and scope of the utility model, can do the utility model
Go out various modifications and variation, therefore all equivalent technical solutions also belong to the scope of the utility model, the utility model it is special
Sharp protection domain should regard Claims scope and limit.
Claims (10)
1. light emitting diode, including：
Light emitting epitaxial layer includes the first semiconductor layer, luminescent layer and the second semiconductor layer successively from top to bottom；
Protective layer is formed on the light emitting epitaxial layer, equipped with a series of openings as conductive channel；
First electrode is electrically connected including being formed on the protective layer, and with first semiconductor layer；
Second electrode is formed on the protective layer, and is electrically connected with second semiconductor layer；
It is characterized in that：The first electrode has welding disk and extension, wherein the upper surface of the extension is in high and low
Lie prostrate shape.
2. light emitting diode according to claim 1, it is characterised in that：The thickness of the protective layer is λ/4n × (2k-
1), wherein λ is the emission wavelength of the luminescent layer, and k is more than 1 natural number, and n is the refractive index of protective layer.
3. light emitting diode according to claim 1, it is characterised in that：It is set successively below the extension of the first electrode
Matcoveredn, transparency conducting layer and insulating layer.
4. light emitting diode according to claim 3, it is characterised in that：Insulation below the extension of the first electrode
Layer is made of a series of block structures, is separated from each other between the block structure.
5. light emitting diode according to claim 1, it is characterised in that：The extension upper surface of the first electrode has
Three or more different height.
6. light emitting diode according to claim 1, it is characterised in that：The part following table of the welding disk of the first electrode
Face is directly contacted with first semiconductor layer.
7. light emitting diode according to claim 1, it is characterised in that：The protective layer is in the pad of the first electrode
Subordinate is rectangular into opening, and area is less than the area of the welding disk of the first electrode.
8. light emitting diode according to claim 7, it is characterised in that：The lower surface of the welding disk of the first electrode is same
When contacted with the protective layer and the first semiconductor layer.
9. light emitting diode according to claim 1, it is characterised in that：The welding disk upper surface of the first electrode is in platform
Scalariform.
10. light emitting diode according to claim 1, it is characterised in that：In the welding disk upper surface of the first electrode
Between region form groove structure, which has at least two-stage step.
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| CN201820090382.5U CN207489906U (en) | 2018-01-19 | 2018-01-19 | Light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820090382.5U CN207489906U (en) | 2018-01-19 | 2018-01-19 | Light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735869A (en) * | 2018-06-25 | 2018-11-02 | 厦门三安光电有限公司 | A kind of light emitting diode |
| CN113036012A (en) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | High light-emitting rate integrated unit diode chip |
-
2018
- 2018-01-19 CN CN201820090382.5U patent/CN207489906U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735869A (en) * | 2018-06-25 | 2018-11-02 | 厦门三安光电有限公司 | A kind of light emitting diode |
| CN108735869B (en) * | 2018-06-25 | 2024-01-30 | 厦门三安光电有限公司 | Light-emitting diode |
| CN113036012A (en) * | 2019-12-25 | 2021-06-25 | 深圳第三代半导体研究院 | High light-emitting rate integrated unit diode chip |
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