CN207517719U - Flexible light emitting diode construction - Google Patents
Flexible light emitting diode construction Download PDFInfo
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- CN207517719U CN207517719U CN201721538082.0U CN201721538082U CN207517719U CN 207517719 U CN207517719 U CN 207517719U CN 201721538082 U CN201721538082 U CN 201721538082U CN 207517719 U CN207517719 U CN 207517719U
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- gallium nitride
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Abstract
The utility model discloses a kind of flexible light emitting diode construction, including：Flexible base plate；The gallium nitride nanometer column being formed on the flexible base plate；It is formed in the current barrier layer of the free end of the gallium nitride nanometer column；It is formed in the transparency conducting layer of the shaft of the gallium nitride nanometer column.In above-mentioned flexible light emitting diode construction, light emitting diode is made on temporary base, gallium nitride nanometer column is used in the light emitting diode, after light emitting diode completes, temporary base is removed, then binds one layer of flexible flexible base plate, form flexible light emitting diode construction, with pliability, the light-emitting diode chip for backlight unit in bending can be avoided to rupture, can also be convenient for being shown on out-of-flatness display surface.
Description
Technical field
The utility model is related to technical field of semiconductors more particularly to a kind of flexible light emitting diode constructions.
Background technology
Gallium nitride (GaN) is a kind of semi-conducting material with broad-band gap (3.4 electron-volts).Utilize GaN semiconductor materials
The peculiar property of material excitation blue light can develop many new photovoltaic applications products.GaN photoelectric devices and electronic device exist at present
The application fields such as optical storage, laser printing, high-brightness LED and wireless base station have good development prospect.
Due to the property of gallium nitride material in itself, such as：Nitrogen higher saturated vapor pressure when high fusion temperature and preparation,
It is difficult to obtain the second best in quality gallium nitride monocrystal substrate so that the gallium nitride single crystal of homogeneity large area is highly difficult.Outside gallium nitride
Prolong in technique, have with gallium nitride crystal lattice mismatch and the relatively small sapphire (Al of thermal mismatching2O3) substrate occupies absolute master
Lead status.But Sapphire Substrate pyroconductivity is low, and the heat dissipation problem that device faces is than more serious, especially high power device, high
Temperature when calorific value makes the device work is significantly raised, has seriously affected device performance.And sapphire resistivity is high, for
LED component can not realize vertical stratification, increase die area, reduce luminous efficiency.This all hinders height to a certain extent
The sustainable development of performance LED component.
It is traditional using sapphire as the GaN base LED generally laterally structures of substrate, i.e., the two of LED electrodes are in device
The same side.Electric current generates thermal energy when passing through n-GaN.Since Sapphire Substrate heat conductivility is poor, can draw under conditions of high current
The degeneration of device is played, is unfavorable for the work of great power LED.Meanwhile transversary GaN base LED also has current blockage, electric current point
Cloth is uneven, it is impossible to the shortcomings of making full use of emitting layer material.And realize substrate transfer by using metal bonding technique, it can be with
The gallium nitride based LED device made on a sapphire substrate is transferred to other heat conduction, on the strong substrate of electric conductivity, such as silicon and
Copper substrate makes the GaN base LED of vertical stratification, so as to effectively improve the luminous efficiency of LED and reliability.In some external texts
In offering, the metal bonding in the form of eutectic bonding such as palladium-indium, gold-silicon, gold-germanium and organic conductive glue are used as bonded layer.But
According to experimental result, metal bonding in the form of eutectic bonding is more than the epitaxial layer of gallium nitride and ideal substrate of two rulers in diameter
In bonding, it is difficult to obtain the alloy-layer being bonded completely of high quality, therefore in large-scale production, the yield of product is not high.And
Under the conditions of identical bonding technology, the metal bonding in the form of diffusion interlinked then has higher-quality bonded interface.Test
As a result in, the bonding area of the metal bonding in the form of diffusion interlinked such as Jin-gold, aluminium-aluminium is significantly greater than using gold-silicon, aluminium-silicon
Deng the metal bonding in the form of eutectic bonding.
Each R ＆ D Report, patent or Qi Publications are also more common in currently based on the structure that sapphire is substrate；Wherein, publication number
Chinese patent application for CN101005110A " realizes the side of gallium nitride light-emitting diode vertical stratification using metal bonding technique
Method " is also to belong to the scope of the utility model, and its main technology contents includes following processing step：
It is outer successively on the surface of a substrate to extend nitride buffer layer, N-shaped gallium nitride, luminescent quantum well layer, p-type gallium nitride；
Thermal evaporation or splash-proofing sputtering metal layer make Ohmic contact and reflecting layer on p-type gallium nitride layer；
The metal layer of thermal evaporation or sputtering with high atomic diffusivity is as bonded interface on reflecting layer and on substrate
Layer；
Select the metal bonding technique in the form of diffusion interlinked；
Remove original A substrates；And
Electrode is done, forms device.
Wherein it is worth noting that：The material of wherein used substrate is sapphire, lithium niobate or other suitable growths
The substrate material of high-quality GaN.And the substrate material in thermal evaporation step is then silicon, copper or other thermal conductivity and good conductivity
Substrate.Its utility model mainly solve the problems, such as be after device is formed, how using metal be bonded formed structure come
Reach good heat dissipation effect.However, no matter how it improves its radiating efficiency or searches out most suitable intermetallic key
Tie power, the light emitting diode made by the above method, when showing, be unable to reach have effects that it is flexible；
Also that is, the structure made in this approach, because whole structure shows rigid structural, can not have in response to display surface
The broadcasting face of out-of-flatness；That is, above-mentioned structure can only be placed on a smooth broadcasting face.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of flexible light emitting diode processing procedure and utilize the system
The flexible light emitting diode construction that journey is formed so that obtained light emitting diode has pliability.
To realize above-mentioned technique effect, the utility model provides a kind of flexible light emitting diode construction, including：
Flexible base plate；
The gallium nitride nanometer column being formed on the flexible base plate；
It is formed in the current barrier layer of the free end of the gallium nitride nanometer column；And
It is formed in the transparency conducting layer of the shaft of the gallium nitride nanometer column.
In the embodiment of the flexible light emitting diode construction of the utility model, the material of the flexible base plate is soft
Polyimides.
In the embodiment of the flexible light emitting diode construction of the utility model, the gallium nitride nanometer column and described flexible
Property substrate between be equipped with n type gallium nitride layer and insulating layer.
In the embodiment of the flexible light emitting diode construction of the utility model, the shaft of the gallium nitride nanometer column and institute
It states and gallium nitride multiple quantum trap and p-type gallium nitride is equipped between transparency conducting layer.
In the embodiment of the flexible light emitting diode construction of the utility model, the outside of the transparency conducting layer has been marked with
Machine silicon and quantum dot.
In the embodiment of the flexible light emitting diode construction of the utility model, the material of the current barrier layer is carbonization
Silicon.
In the embodiment of the flexible light emitting diode construction of the utility model, the transparency conducting layer is conductive for indium WU
Layer.
In above-mentioned flexible light emitting diode construction, light emitting diode is made on temporary base, in light emitting diode
It is middle to use gallium nitride nanometer column, after light emitting diode completes, remove temporary base, then bind one layer it is flexible flexible
Property substrate, form flexible light emitting diode construction, there is pliability, the light-emitting diode chip for backlight unit in bending can be avoided to break
It splits, can also be convenient for being shown on out-of-flatness display surface.
Description of the drawings
It is required in being described below to embodiment in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the schematic cross-sectional view of the flexible light emitting diode construction of the utility model embodiment.
Fig. 2 is the flow chart of the processing procedure of the flexible light emitting diode construction of making of the utility model embodiment.
Fig. 3 is the utility model embodiment in the schematic cross-sectional view that n type gallium nitride layer is formed on temporary base.
Fig. 4 is the schematic cross-sectional view of the formation gallium nitride nanometer column of the utility model embodiment.
Fig. 5 is the schematic cross-sectional view of the formation current barrier layer of the utility model embodiment.
Fig. 6 is the formation p-type gallium nitride of the utility model embodiment and the schematic cross-sectional view of transparency conducting layer.
Fig. 7 is the schematic cross-sectional view for being removed temporary base of the utility model embodiment.
Fig. 8 is the section view being filled in organosilicon and quantum dot between gallium nitride nanometer column of the utility model embodiment
Schematic diagram.
Fig. 9 is that the light emitting diode by the gallium nitride nanometer column containing organosilicon of the utility model embodiment is bonding on
Schematic cross-sectional view on soft polyimides.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, the technical solution in utility model embodiment is carried out clear
Chu is fully described by, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole realities
Apply example.Embodiment based on the utility model, those of ordinary skill in the art institute under the premise of creative work is not made
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 1, mainly include can for a kind of flexible light emitting diode construction that the utility model embodiment provides
Flexible substrate 10, the gallium nitride nanometer column 11 being arranged on the flexible base plate 10, the freedom for being arranged on gallium nitride nanometer column 11
Current barrier layer 12 on end and the transparency conducting layer 13 being arranged on the shaft of gallium nitride nanometer column 11.Wherein, it is flexible
Property substrate 10 be flexible base plate, preferably material be soft polyimides, polyimides is the best organic polymer of comprehensive performance
One of material, high temperature resistant is up to 400 DEG C or more, long-time service temperature range -200~300 DEG C, no sharp melting point, high insulating property,
103 hertz of lower dielectric constants 4.0, dielectric loss only 0.004~0.007 belong to F to H.
Gallium nitride nanometer column 11 makes to be formed using n type gallium nitride.Gallium nitride nanometer column 11 and flexible base plate 10 it
Between a n type gallium nitride layer 14 and an insulating layer 15 can be also set, wherein, insulating layer 15 is covered in the upper table of flexible base plate 10
Face, n type gallium nitride layer 14 are set on insulating layer 15.
It is equipped between the shaft of gallium nitride nanometer column 11 and transparency conducting layer 13 and is nitrogenized by gallium nitride multiple quantum trap and p-type
The combination gallium nitride layer 16 of gallium composition.
Further, it is full of organosilicon (PDMS) and quantum dot in the outside of p-type gallium nitride and transparency conducting layer 13
(Quantum Dot)17。
Current barrier layer 12 is silicon nitride, exposes to transparency conducting layer 13, gallium nitride multiple quantum trap, p-type gallium nitride.
A kind of flexible light emitting diode construction of the utility model embodiment using the above structure, has soft
Flexible base plate 10, light emitting diode main part use gallium nitride nanometer column 11 so that total has pliability, can keep away
Exempt from the light emitting diode construction in bending to rupture, can also be convenient for being shown on out-of-flatness display surface.
Referring again to shown in Fig. 2, the utility model is above-mentioned flexible luminous to make embodiment further provides one kind
The flexible light emitting diode processing procedure of diode structure, mainly comprises the following steps：
Step 101：One temporary base is provided；
Step 102：In making a buffer layer on interim plate；
Step 103：In making a n type gallium nitride layer on buffer layer；
Step 104：N type gallium nitride layer is patterned, forms gallium nitride nanometer column；
Step 105：In making a current barrier layer on patterned n type gallium nitride layer；
Step 106：Patterned current blocking layer makes current barrier layer form in the free end of gallium nitride nanometer column；
Step 107：Gallium nitride layer is combined in making one on patterned current barrier layer；
Step 108：Patterning combination gallium nitride layer, makes combination gallium nitride layer form in the shaft of gallium nitride nanometer column, electricity
Flow barrier exposes to combination gallium nitride layer；
Step 109：In patterned combine a transparency conducting layer is made on gallium nitride layer；
Step 110：Patterned transparent conductive layer makes current barrier layer expose to transparency conducting layer；
Step 111：Temporary base and buffer layer are removed from patterned n type gallium nitride layer；And
Step 112：One flexible base plate is provided, flexible base plate is bonding on to the N of stripped temporary base and buffer layer
On type gallium nitride layer.
In present embodiment：Buffer layer makes to be formed by sedimentation.Patterned step is to be etched by light processing procedure with lithographic
To implement.The step of stripping, is carries out in a manner of radium-shine stripping.It combines gallium nitride layer and includes gallium nitride multiple quantum trap and p-type nitrogen
Change gallium.
Moreover, the step of being to make a combination gallium nitride layer on the patterned current barrier layer (step 107)
Before, it may also include step：
In making an insulating layer on patterned current barrier layer；
Patterned insulation layer makes current barrier layer and gallium nitride nanometer column expose to insulating layer；
Also, it is described on patterned current barrier layer make one combination gallium nitride layer the step of (step 107)
For：Include the combination gallium nitride layer of gallium nitride multiple quantum trap and p-type gallium nitride in making on patterned insulating layer.
In above-mentioned flexible light emitting diode processing procedure, light emitting diode is made on temporary base, in light emitting diode
It is middle to use gallium nitride nanometer column, after light emitting diode completes, remove temporary base, then bind one layer it is flexible flexible
Property substrate, form flexible light emitting diode construction, there is pliability, the light-emitting diode chip for backlight unit in bending can be avoided to break
It splits, can also be convenient for being shown on out-of-flatness display surface.
The total implementation steps of a kind of flexible light emitting diode processing procedure provided above for the utility model embodiment,
Fig. 3~9 are please referred to below, each step to a kind of flexible light emitting diode processing procedure of the utility model embodiment and are obtained
The structure of the intermediate product obtained is described in detail.
Referring initially to shown in Fig. 3, wherein during the flexible light emitting diode of visible the utility model to be implemented, first must
First prepare a temporary base 100, which is rigid substrate, and sapphire (Al2O3) base is selected in present embodiment
Plate is then one layer of buffer layer 20 of formation on the sapphire substrate then；N-type nitridation is formed on this layer of buffer layer 20
Gallium (n-GaN) layer 14.
Then, it please refers to shown in Fig. 4, wherein step is the patterning n type gallium nitride layer 14 used by visible,
That is, using lithographic photoetch mode the n type gallium nitride layer 14 formed columnar gallium nitride nanometer column 11, in figure,
Spaced apart more gallium nitride nanometers column 11 is formed, can be to be placed equidistant with.
Followed by please referring to shown in Fig. 5, wherein step is using sedimentation to form a silicon nitride used by visible
Layer, and be covered on patterned gallium nitride nanometer column 11, and implement lithographic photoetch again to pattern the silicon nitride layer.In
A current barrier layer 12 is formed on patterned silicon nitride layer.
It is then to pattern above-mentioned current barrier layer 12 again shown in Fig. 6 so that the current barrier layer 12 after patterning is high
For above-mentioned gallium nitride nanometer column 11；Thereafter, then in forming a layer insulating 50 on patterned current barrier layer 12, and
The insulating layer 50 is patterned again, and current barrier layer 12 and patterned gallium nitride nanometer column 11 are exposed into the insulating layer
50.In forming a combination gallium nitride layer 16 on the insulating layer 50 with regeneration method, which includes gallium nitride
Multiple quantum trap and p-type gallium nitride；And respectively gallium nitride multiple quantum trap and p-type gallium nitride are patterned again, it will
Gallium nitride multiple quantum trap and p-type gallium nitride are only coated on the outside of the shaft of gallium nitride nanometer column 11；In patterned p-type nitrogen
Change and layer of transparent conductive layer (ITO) 13 is formed on gallium and insulating layer 50, this layer of transparency conducting layer 13 is indium WU conductive layers；Thereafter then
The transparency conducting layer 13 is patterned, to form patterned indium WU conductive layers, and current barrier layer 12 is exposed to
Indium WU conductive layers.
It is then from aforementioned n type gallium nitride layer shown in Fig. 7 after abovementioned steps by temporary base 100 and buffer layer 20
14 lower surface stripping, removes mode during stripping using laser.
Please refer to shown in Fig. 8, wherein, by organosilicon and quantum dot 17 be mixed in right amount it is aforementioned oneself by temporary base 100
In the light emitting diode mixed structure removed with buffer layer 20；And it is shown in Fig. 9, then it is by soft polyimides
(Polyimide；PI it) is bonding on as flexible base plate 10 luminous after aforementioned stripped temporary base 100 and buffer layer 20
Diode mixed structure, to complete the processing procedure of entire flexible light emitting diode construction.
It please refers to shown in Fig. 1, wherein visible is the solid of the light emitting diode construction with gallium nitride nanometer column 11
Schema；Wherein visible flexible base plate 10 is flexible soft polyimides (Polyimide, abbreviation PI), thereon
There is provided necessary insulating layer 15, which can be bonding on aforementioned stripped temporary base 100 by flexible base plate 10
And before the light emitting diode mixed structure after buffer layer 20, it is previously formed in flexible base plate 10 or stripped temporary base
100 and buffer layer 20 after light emitting diode mixed structure surface.In addition to insulating layer 15, also distinguish on flexible base plate 10
Gallium nitride nanometer column 11 with one layer of n type gallium nitride (n-GaN) layer 14 and N-type；In the outside of gallium nitride nanometer column 11
It is then to be coated with gallium nitride multiple quantum trap (MQWs), p-type gallium nitride and transparency conducting layer (ITO) 13；And gallium nitride how
One layer of current barrier layer 12 that one free end of rice column 11 is formed is then the top for protruding from entire gallium nitride nanometer column 11.Together
When, then it is filled with organosilicon (PDMS) and quantum dot (Quantum in the outside of p-type gallium nitride and transparency conducting layer 13
Dot)。
It should be noted that structure, ratio, size depicted in this specification institute accompanying drawings etc., only coordinating
The bright revealed content of book, so that those skilled in the art understands and reads, being not limited to the utility model can implement
Qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size,
In the case where not influencing the effect of the utility model can be generated and the purpose that can reach, should all still fall disclosed in the utility model
Technology contents obtain and can cover in the range of.Meanwhile in this specification it is cited as " on ", " under ", "left", "right", " in
Between " and " one " etc. term, be merely convenient to understanding rather than to limit the enforceable range of the utility model for narration,
Relativeness is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable scope of the utility model.
The above is only the preferred embodiment of the utility model, and not the utility model is done in any form
Limitation although the utility model has been disclosed with preferred embodiment as above, is not limited to the utility model, any to be familiar with
Professional and technical personnel, in the range of technical solutions of the utility model are not departed from, when in the technology using the disclosure above
Hold the equivalent embodiment made a little change or be modified to equivalent variations, as long as being without departing from technical solutions of the utility model
Hold, any simple modification, equivalent change and modification that foundation the technical essence of the utility model makees above example, still
Belong in the range of technical solutions of the utility model.
Claims (7)
1. a kind of pliability light emitting diode construction, which is characterized in that including：
Flexible base plate；
The gallium nitride nanometer column being formed on the flexible base plate；
It is formed in the current barrier layer of the free end of the gallium nitride nanometer column；And
It is formed in the transparency conducting layer of the shaft of the gallium nitride nanometer column.
2. pliability light emitting diode construction as described in claim 1, it is characterised in that：The material of the flexible base plate is
Soft polyimides.
3. pliability light emitting diode construction as described in claim 1, it is characterised in that：The gallium nitride nanometer column and described
N type gallium nitride layer and insulating layer are equipped between flexible base plate.
4. pliability light emitting diode construction as described in claim 1, it is characterised in that：The shaft of the gallium nitride nanometer column
Gallium nitride multiple quantum trap and p-type gallium nitride are equipped between the transparency conducting layer.
5. pliability light emitting diode construction as described in claim 1, it is characterised in that：The external of the transparency conducting layer is noted
There are organosilicon and quantum dot.
6. pliability light emitting diode construction as described in claim 1, it is characterised in that：The material of the current barrier layer is
Silicon carbide.
7. pliability light emitting diode construction as described in claim 1, it is characterised in that：The transparency conducting layer is led for indium WU
Electric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721538082.0U CN207517719U (en) | 2017-11-17 | 2017-11-17 | Flexible light emitting diode construction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721538082.0U CN207517719U (en) | 2017-11-17 | 2017-11-17 | Flexible light emitting diode construction |
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| CN207517719U true CN207517719U (en) | 2018-06-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749437A (en) * | 2017-11-17 | 2018-03-02 | 广州市香港科大霍英东研究院 | Pliability light emitting diode processing procedure and its structure |
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2017
- 2017-11-17 CN CN201721538082.0U patent/CN207517719U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749437A (en) * | 2017-11-17 | 2018-03-02 | 广州市香港科大霍英东研究院 | Pliability light emitting diode processing procedure and its structure |
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