CN207498515U - A kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient - Google Patents
A kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient Download PDFInfo
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- CN207498515U CN207498515U CN201721350705.1U CN201721350705U CN207498515U CN 207498515 U CN207498515 U CN 207498515U CN 201721350705 U CN201721350705 U CN 201721350705U CN 207498515 U CN207498515 U CN 207498515U
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Abstract
The utility model discloses a kind of thermal field structures for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient, are related to polycrystalline silicon ingot or purifying furnace technical field.Including heating unit, insulation cage body, silica crucible and graphite block；Heating unit includes the first heat block, the second heat block, third heat block, fixed plate and fixed column；One surface of fixed plate is fixed with several heating plates；Another surface of fixed plate is fixed with fixed column；One end of fixed column coordinates with insulation cage body；Insulation cage body inner surface is fixed with side heater；Having heaters is fixed on one surface of silica crucible；One surface of heater is fixed with several support columns；One surface of graphite block is provided with thermal insulation board；One surface of thermal insulation board is fixed with several graphite pillars.The utility model is by the effect of the first heat block of heating unit, the second heat block and third heat block, and the temperature gradient for solving existing crucible side and center is larger, during causing length brilliant the problem of defect proliferation.
Description
Technical field
The utility model belongs to polycrystalline silicon ingot or purifying furnace technical field, more particularly to a kind of polysilicon for adjusting temperature gradient
The thermal field structure of ingot furnace.
Background technology
In fast-developing photovoltaic industry, crystal silicon cell occupies part of the overwhelming majority by its high efficiency and stability
Volume, wherein polycrystal silicon cell have higher cost performance and competitive advantage with advantages such as its low cost, high efficiency, low light attenuations, because
And become the photovoltaic cell that share maximum is occupied on Vehicles Collected from Market.
It is the main production process of current solar energy photovoltaic material using directional solidification method production solar energy polycrystalline silicon, more
In crystal silicon ingot production process, polycrystalline silicon raw material in the silica crucible in existing ingot furnace is melted, is then reduced by temperature,
Make melted silicon nucleating growth, form polycrystal silicon ingot.In the growth course of silicon ingot, the mode of heat-insulation cage is either lifted up,
Or heat insulation bottom board, to the mode of decline, heat mainly scatters and disappears outward from the surrounding of heat-conducting block and center, but this radiating mode
The temperature gradient that can cause crucible side and center is larger, and the silicon ingot crystals stress grown is larger, easily causes length
Defect is proliferated during crystalline substance, silicon ingot cracking and a series of influence such as silicon chip fragment in slicing processes during evolution, this
A little yield rates for significantly reducing ingot casting, increase production cost.
Utility model content
The purpose of this utility model is to provide a kind of thermal field structures for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient, pass through
The effect of first heat block of heating unit, the second heat block and third heat block solves existing crucible side and center
The problem of temperature gradient is larger, and defect is proliferated during causing length brilliant.
In order to solve the above technical problems, the utility model is achieved through the following technical solutions：
The utility model is a kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient, including heating unit, is protected
The heat-insulated cage body of temperature, silica crucible and graphite block；
The heating unit includes the first heat block, the second heat block, third heat block, fixed plate and fixed column；It is described
One surface of fixed plate is fixed with several heating plates；Several heating plates be built-in with respectively the first heat block, the second heat block and
Third heat block；
Another surface of fixed plate is fixed with fixed column；Described fixed column one end is fixed with a disk；The fixed column
The through hole of one end and insulation cage body coordinate；
The insulation cage body is half cage body structure；One surface of insulation cage body is provided with through hole；The guarantor
Surface is fixed with side heater in warm heat-insulation cage body；
Silica crucible is placed with below the heating unit；The silica crucible is cylindrical structure；The silica crucible one
Having heaters is fixed on surface；One surface of heater is fixed with several support columns；
One surface of graphite block is provided with thermal insulation board；One surface of thermal insulation board is fixed with several graphite pillars.
Further, the heating power difference of the first heat block of the heating unit, the second heat block, third heat block
It is controlled by different systems.
Further, the heat block that several heating plates in the heating unit set several independent respectively；It is described
The heating power of heat block is controlled respectively by different systems.
Further, the clearance distance of the first heat block of the heating unit and the second heat block is 50mm~200mm；
Second heat block of the heating unit and the clearance distance of third heat block are 50mm~200mm.
Further, the heat block in the heating unit is arranged to adding on identical horizontal line according to different demands
Heat block heating power is equal；Or the heat block heating power being arranged in identical heating plate is equal；Or it is arranged to each heat block
Heating power all controlled by independent system；The heating unit can be adjusted according to different demands in ingot furnace
Temperature gradient and temperature change.
The utility model has the advantages that：
1st, the utility model passes through the effect of the first heat block of heating unit, the second heat block and third heat block, tool
The advantages of having the heating speed for adjusting ingot furnace and providing more stable temperature gradient, solves existing crucible side and center
The problem of temperature gradient is larger, and defect is proliferated during causing length brilliant.
2nd, the utility model is according to different demands, it can be provided the heat block heating power phase on identical horizontal line
Deng；Or the heat block heating power being arranged in identical heating plate is equal；Or be arranged to the heating power of each heat block by
Independent system control；I.e. heating unit can be according to different demands, and the temperature gradient and temperature that adjust in ingot furnace become
Change；There is the polycrystal silicon ingot that high quality, high finished product rate are produced with stable temperature gradient and more precise control.
3rd, the heating plate in heating unit can be replaced with heating annulus by the utility model according to different demands；Add
Hot annulus is built-in with different heat blocks, and heat block is set according to different demands；The temperature in ingot furnace can be adjusted
Gradient and temperature change；With the polycrystalline that high quality, high finished product rate are produced with stable temperature gradient and more precise control
The advantages of silicon ingot.
Certainly, any product for implementing the utility model does not necessarily require achieving all the advantages described above at the same time.
Description of the drawings
In order to illustrate more clearly of the technical solution of the utility model embodiment, make required for being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the utility model,
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
Other attached drawings.
Fig. 1 is to disclose a kind of thermal field structure figure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient；
In attached drawing, parts list represented by the reference numerals are as follows：
1- heating units, 2- insulation cage bodies, 3- silica crucibles, 4- graphite blocks, 5- heaters, 101- first are heated
Block, the second heat blocks of 102-, 103- third heat blocks, 104- fixed plates, 105- fixed columns, 106- heating plates, 107- disks,
201- through holes, 202- sides heater, 401- thermal insulation boards, 402- graphite pillars, 501- support columns.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without creative efforts
The all other embodiment obtained, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be appreciated that term " trepanning ", " on ", " under ", " thickness ", " top ",
" in ", " length ", " interior ", indicating positions or the position relationship such as " surrounding ", be for only for ease of description the utility model and simplification
Description rather than instruction imply that signified component or element must have specific orientation, with specific azimuth configuration and behaviour
Make, therefore it is not intended that limitation to the utility model.
Refering to Figure 1, the utility model is a kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient, packet
Include heating unit 1, insulation cage body 2, silica crucible 3 and graphite block 4；
Heating unit 1 includes the first heat block 101, the second heat block 102, third heat block 103, fixed plate 104 and consolidates
Fixed column 105；104 1 surface of fixed plate is fixed with four heating plates 106；Four heating plates 106 be built-in with respectively the first heat block 101,
Second heat block 102 and third heat block 103；
104 another surface of fixed plate is fixed with fixed column 105；105 one end of fixed column is fixed with a disk 107；Fixed column
105 one end and the through hole 201 of insulation cage body 2 coordinate；
Insulation cage body 2 is half cage body structure；2 one surface of insulation cage body is provided with through hole 201；Insulation cage
2 inner surface of body is fixed with side heater 202；
1 lower section of heating unit is placed with silica crucible 3；Silica crucible 3 is cylindrical structure；3 one surface of silica crucible is fixed
Having heaters 5；5 one surface of heater is fixed with two support columns 501；
4 one surface of graphite block is provided with thermal insulation board 401；401 1 surface of thermal insulation board is fixed with two graphite pillars 402.
Wherein, the heating power point of the first heat block 101 of heating unit 1, the second heat block 102, third heat block 103
It is not controlled by different systems.
Wherein, four heating plates 106 in heating unit 1 set three independent heat blocks respectively；The heating of heat block
Power is controlled respectively by different systems.
Wherein, the clearance distance of the first heat block 101 of heating unit 1 and the second heat block 102 is 50mm~200mm；
Second heat block 102 of heating unit 1 and the clearance distance of third heat block 103 are 50mm~200mm.
Wherein, the heat block in heating unit 1 is according to different demands, the heat block heating being arranged on identical horizontal line
Power is equal；Or the heat block heating power being arranged in identical heating plate 106 is equal；Or it is arranged to the heating of each heat block
Power is all controlled by independent system；Heating unit can according to different demands, adjust ingot furnace in temperature gradient and
Temperature change.
Wherein, the heating plate 106 in heating unit 1 can also be replaced with heating annulus；Heating annulus is built-in with different
Heat block, heat block are set according to different demands.
In the description of this specification, the description of reference term " one embodiment ", " example ", " specific example " etc. means
At least one of the utility model is contained in reference to the embodiment or example particular features, structures, materials, or characteristics described
In embodiment or example.In the present specification, schematic expression of the above terms be not necessarily referring to identical embodiment or
Example.Moreover, particular features, structures, materials, or characteristics described can be in any one or more embodiments or example
In combine in an appropriate manner.
The preferred embodiment in the utility model disclosed above is only intended to help to illustrate the utility model.Preferred embodiment is simultaneously
There is no the details that detailed descriptionthe is all, it is only the specific embodiment also not limit the utility model.Obviously, according to this theory
The content of bright book can make many modifications and variations.This specification is chosen and specifically describes these embodiments, is in order to preferably
The principle and practical application of the utility model is explained, so as to which skilled artisan be enable to be best understood by and utilize this
Utility model.The utility model is limited only by the claims and their full scope and equivalents.
Claims (3)
1. a kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient, it is characterised in that：Including heating unit (1), protect
The heat-insulated cage body (2) of temperature, silica crucible (3) and graphite block (4)；
The heating unit (1) includes the first heat block (101), the second heat block (102), third heat block (103), fixed plate
(104) and fixed column (105)；(104) one surface of fixed plate is fixed with several heating plates (106)；Several heating plates
(106) it is built-in with the first heat block (101), the second heat block (102) and third heat block (103) respectively；
Another surface of the fixed plate (104) is fixed with fixed column (105)；Described fixed column (105) one end is fixed with a disk
(107)；One end of the fixed column (105) coordinates with the through hole (201) of insulation cage body (2)；
The insulation cage body (2) is half cage body structure；(2) one surface of insulation cage body is provided with through hole (201)；
Insulation cage body (2) inner surface is fixed with side heater (202)；
Silica crucible (3) is placed with below the heating unit (1)；The silica crucible (3) is cylindrical structure；The quartz earthenware
Having heaters (5) is fixed on (3) one surface of crucible；(5) one surface of heater is fixed with several support columns (501)；
(4) one surface of graphite block is provided with thermal insulation board (401)；(401) one surface of thermal insulation board is fixed with several graphite
Pillar (402).
2. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient according to claim 1, which is characterized in that
The first heat block (101) of the heating unit (1), the second heat block (102), third heat block (103) heating power point
It is not controlled by different systems.
3. a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient according to claim 1, which is characterized in that
The first heat block (101) of the heating unit (1) and the clearance distance of the second heat block (102) are 50mm~200mm；It is described
The second heat block (102) of heating unit (1) and the clearance distance of third heat block (103) are 50mm~200mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721350705.1U CN207498515U (en) | 2017-10-19 | 2017-10-19 | A kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721350705.1U CN207498515U (en) | 2017-10-19 | 2017-10-19 | A kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient |
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| Publication Number | Publication Date |
|---|---|
| CN207498515U true CN207498515U (en) | 2018-06-15 |
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| CN201721350705.1U Active CN207498515U (en) | 2017-10-19 | 2017-10-19 | A kind of thermal field structure for the polycrystalline silicon ingot or purifying furnace for adjusting temperature gradient |
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| CN (1) | CN207498515U (en) |
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Effective date of registration: 20201224 Address after: 223800 Tianhe Road, Suqian Economic and Technological Development Zone, Suqian City, Jiangsu Province Patentee after: TIANHE LIGHT ENERGY (SUQIAN) TECHNOLOGY Co.,Ltd. Address before: 230000 Rainbow (Hefei) photovoltaic Co., Ltd. at the intersection of Kuihe road and Tushan Road, Xinzhan District, Hefei City, Anhui Province Patentee before: HEFEI TRINASOLAR TECHNOLOGY Co.,Ltd. |