CN207474467U - Technotron - Google Patents
Technotron Download PDFInfo
- Publication number
- CN207474467U CN207474467U CN201720505932.0U CN201720505932U CN207474467U CN 207474467 U CN207474467 U CN 207474467U CN 201720505932 U CN201720505932 U CN 201720505932U CN 207474467 U CN207474467 U CN 207474467U
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- Prior art keywords
- type
- heavily doped
- doped region
- drain electrode
- positive grid
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model discloses a kind of technotron, including：P type substrate；P type substrate upper surface is equipped with the first N-type lightly doped district as raceway groove；First N-type lightly doped district both ends are respectively equipped with the first N-type heavily doped region as drain electrode and the second N-type heavily doped region as source electrode；Oxide layer is equipped between first N-type heavily doped region and the second N-type heavily doped region, oxide layer is located at the upper surface of the first N-type lightly doped district；The upper surface of oxide layer is equipped with the first p-type heavily doped region as positive grid, and the lower surface of the first N-type lightly doped district is equipped with the second p-type heavily doped region as backgate, and backgate is corresponding with positive grid position；Further include the silicon dioxide insulating layer being covered in right over positive grid, drain electrode, source electrode and oxide layer；Positive grid, drain electrode and source electrode export silicon dioxide insulating layer by pin.The utility model is simple in structure, easily prepared.Current capacity is improved while smaller pinch-off voltage is maintained, improves operating voltage range.
Description
Technical field
The utility model belongs to technical field of electronic components, relates in particular to a kind of technotron.
Background technology
Field-effect tube is a kind of voltage amplifying device, it has, and there are three electrodes：Source electrode, grid and drain electrode.Field-effect tube packet
Include technotron（JFET）With metal-oxide field-effect tube（MOSFET）.In practice, most commonly seen is n-channel
JFET.Its basic structure is that two P-doped zones are diffused into the both sides of N-type semiconductor, forms two PN junctions.The two p-types
The grid of doped region, that is, JFET, the N-type semiconductor area i.e. raceway groove of JFET being clipped between two P-doped zones, N-type semiconductor
Both ends are respectively the source electrode and drain electrode of JFET.Field-effect tube on existing market its N is mainly depended primarily on by pinch-off voltage
The impurity concentration of raceway groove can not take into account current capacity, breakdown voltage and pinch-off voltage.Therefore, how to provide a kind of novel
Field-effect tube, can improve current capacity while smaller pinch-off voltage is maintained, improve operating voltage range, be
Those skilled in the art need the direction studied.
Utility model content
The purpose of this utility model is to provide a kind of field-effect tube, can be improved while smaller pinch-off voltage is maintained
Current capacity greatly improves operating voltage range.
A kind of technotron, including：P type substrate；The P type substrate upper surface is equipped with the first N-type as raceway groove
Lightly doped district；The first N-type lightly doped district both ends are respectively equipped with as the first N-type heavily doped region of drain electrode and as source electrode
Second N-type heavily doped region；Oxide layer, the oxide layer are equipped between the first N-type heavily doped region and the second N-type heavily doped region
Positioned at the upper surface of the first N-type lightly doped district；The upper surface of the oxide layer is equipped with the first p-type heavily doped region as positive grid,
The lower surface of the first N-type lightly doped district is equipped with the second p-type heavily doped region as backgate, the backgate and positive grid position pair
It should；Silicon dioxide insulating layer is further included, the silicon dioxide insulating layer is covered in the positive grid, drain electrode, source electrode and oxide layer
Surface；The positive grid, drain electrode and source electrode export silicon dioxide insulating layer by pin.
By using this technical solution：To be formed between the backgate of technotron N-type channel and P type substrate it
Between and it is corresponding with positive grid position.When grid applies negative voltage, the depletion region of positive grid PN junction and the depletion region of backgate PN junction are with negative
The increase of pressure is longitudinally extended.Therefore, it is possible to obtain smaller pinch-off voltage.And set silicon dioxide insulating layer that can effectively improve
The anti-breakdown performance of field-effect tube improves operating voltage range.
Preferably, in above-mentioned technotron：Field plate is further included, the field plate is set on drain electrode and is above leaned on positive grid
Nearly drain electrode side.
By using this technical solution：When high pressure is born in drain electrode, the N-channel surface induction hole shape below field plate
Into P-type semiconductor, the PN junction of reverse bias is formed with N-channel, further improves the drain-source breakdown voltage of technotron.
It is further preferred that in above-mentioned technotron：The field plate is formed using polycrystalline titanium.
Compared with prior art, the utility model is simple in structure, easily prepared.It can maintain smaller pinch-off voltage
Current capacity is improved simultaneously, greatly improves operating voltage range.
Description of the drawings
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is the structure diagram of embodiment 1；
Each reference numeral and component names correspondence are as follows：
1st, P type substrate；2nd, the first N-type lightly doped district；3rd, the first N-type heavily doped region；4th, the second N-type heavily doped region；5th, oxygen
Change layer；6th, the first p-type heavily doped region；7th, the second p-type heavily doped region；8th, silicon dioxide insulating layer；9th, field plate；
Specific embodiment
In order to illustrate more clearly of the technical solution of the utility model, the utility model is made into one below in conjunction with attached drawing
Step description.
It is the structure of the prior art as shown in Figure 1：
A kind of technotron, including：P type substrate 1；1 upper surface of P type substrate is equipped with the first N as raceway groove
Type lightly doped district 2；First N-type lightly doped district, 2 both ends are respectively equipped with as the first N-type heavily doped region 3 of drain electrode and conduct
Second N-type heavily doped region 4 of source electrode；Oxide layer 5 is equipped between the first N-type heavily doped region 3 and the second N-type heavily doped region 4,
The oxide layer 5 is located at the upper surface of the first N-type lightly doped district 2；The upper surface of the oxide layer 5 is equipped with first as positive grid
P-type heavily doped region 6, the lower surface of the first N-type lightly doped district 2 is equipped with the second p-type heavily doped region 7 as backgate, described
Backgate is corresponding with positive grid position；Silicon dioxide insulating layer 8 and field plate 9 are further included, the silicon dioxide insulating layer 8 is covered in institute
State the surface of positive grid, drain electrode, source electrode and oxide layer 5；The positive grid, drain electrode and source electrode export silicon dioxide insulator by pin
Layer 8.The field plate 9 is set on drain electrode above and positive grid are close to drain electrode side.The field plate 9 is formed using polycrystalline titanium.
The above, only specific embodiment of the utility model, but the scope of protection of the utility model is not limited to
This, any those skilled in the art is disclosed in the utility model in technical scope, the variation that can readily occur in
Or replace, it should be covered within the scope of the utility model.The scope of protection of the utility model is with claims
Subject to protection domain.
Claims (3)
1. a kind of technotron, it is characterised in that including：P type substrate（1）；The P type substrate（1）Upper surface is equipped with conduct
First N-type lightly doped district of raceway groove（2）；The first N-type lightly doped district（2）Both ends are respectively equipped with the first N-type as drain electrode
Heavily doped region（3）With the second N-type heavily doped region as source electrode（4）；The first N-type heavily doped region（3）It is heavily doped with the second N-type
Miscellaneous area（4）Between be equipped with oxide layer（5）, the oxide layer（5）Positioned at the first N-type lightly doped district（2）Upper surface；The oxidation
Layer（5）Upper surface be equipped with the first p-type heavily doped region as positive grid（6）, the first N-type lightly doped district（2）Lower surface
Equipped with the second p-type heavily doped region as backgate（7）, the backgate is corresponding with positive grid position；Further include silicon dioxide insulating layer
（8）, the silicon dioxide insulating layer（8）It is covered in the positive grid, drain electrode, source electrode and oxide layer（5）Surface；It is described just
Grid, drain electrode and source electrode export silicon dioxide insulating layer by pin（8）.
2. technotron as described in claim 1, it is characterised in that：Further include field plate（9）, the field plate（9）If
In drain electrode above with positive grid close to drain electrode side.
3. technotron as claimed in claim 2, it is characterised in that：The field plate（9）It is formed using polycrystalline titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720505932.0U CN207474467U (en) | 2017-05-09 | 2017-05-09 | Technotron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720505932.0U CN207474467U (en) | 2017-05-09 | 2017-05-09 | Technotron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207474467U true CN207474467U (en) | 2018-06-08 |
Family
ID=62255761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720505932.0U Expired - Fee Related CN207474467U (en) | 2017-05-09 | 2017-05-09 | Technotron |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207474467U (en) |
-
2017
- 2017-05-09 CN CN201720505932.0U patent/CN207474467U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210528 Address after: Room 405, building 2, no.1690 Cailun Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: SUPER SEMICONDUCTOR (SHANGHAI) Co.,Ltd. Address before: 201203 3rd floor, building 1, No. 400, Fangchun Road, free trade Experimental Zone, Pudong New Area, Shanghai Patentee before: SUPER SEMICONDUCTOR (SHANGHAI) Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180608 |