CN207409795U - Packaging substrate structure based on VCSEL laser diodes - Google Patents
Packaging substrate structure based on VCSEL laser diodes Download PDFInfo
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- CN207409795U CN207409795U CN201721216251.9U CN201721216251U CN207409795U CN 207409795 U CN207409795 U CN 207409795U CN 201721216251 U CN201721216251 U CN 201721216251U CN 207409795 U CN207409795 U CN 207409795U
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- Prior art keywords
- laser diodes
- vcsel laser
- gold
- aluminium nitride
- vcsel
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Abstract
The utility model discloses a kind of packaging substrate structure based on VCSEL laser diodes, using VCSEL laser diodes be total to gold solder be connected to after aluminium nitride substrate again be total to gold solder be connected in red copper gold-plated stent, most rear cover diaphragm is sealed.The utility model is electrically separated using second heat, has completely cut off the too thin caused chip leaky of aluminium nitride substrate；It eliminates pin in encapsulation process and is stained with insecure phenomenon with glue, it is easier to process.It is damaged after being easily covered with dust due to VCSEL laser chips, the reliability to improve VCSEL laser chips has especially added the sealing of silica gel of the diaphragm through high transmittance, so that the VCSEL laser diodes after encapsulation are more reliable.
Description
Technical field
The utility model is related to laser diode techniques field more particularly to a kind of envelopes based on VCSEL laser diodes
Fill base construction.
Background technology
In field of semiconductor lasers, field of semiconductor lasers, the edge-emission semiconductor laser based on GaAs materials
Dominant position is occupied always, and is widely used in the fields such as industry, medical treatment, scientific research.However, edge-emission semiconductor laser is but deposited
Its is fatal the defects of, although its life expectancy is up to tens thousand of hours, under pulse condition, catastrophic optical damage damage probability
Greatly, it is serious to aging effects, so, actual life is far from reaching preferable life expectancy.Accordingly, it is desirable to provide
A kind of new semiconductor laser available for industrial circle.Existing technology is to be led based on VCSEL laser chips and aluminium oxide
Hot substrate, it is impossible to which complete heat conduction causes chip internal thermal reactor collection, and properties of product decline.
The prior art is is packaged based on VCSEL laser chips and red copper substrate, though so energy heat conduction, due to its heat
Swollen contraction coefficients are too big, after machining, since coefficient of thermal expansion and contraction and the substrate copper of chip itself mismatch, in chip plus
After heat or low temperature shunk after easily crack and fail.Existing VCSEL laser chips due to first not preset golden tin, with base
It is be easy to cause in plate welding process with substrate connection loosely, chip upwarps and causes chip failure.Existing chip is in pin simultaneously
It due to excessively pursuing beauty during welding, is stained with using glue, causes chip failure after pin solder joint comes off in 70 degree of high temperature.
Utility model content
For shortcoming present in above-mentioned technology, the utility model provides a kind of based on VCSEL laser diodes
Packaging substrate structure, based on VCSEL laser multiple spot array laser diodes, plus aluminum-nitride-based after recycling red copper stent gold-plated
Plate is sintered with VCSEL laser diodes, and reliability of the VCSEL laser diodes under high/low temperature can be effectively ensured.
In order to achieve the above object, the utility model discloses a kind of packaging substrate structure based on VCSEL laser diodes,
Including VCSEL laser diodes, red copper gold-plated stent and aluminium nitride substrate, VCSEL laser diodes are total to gold solder and are connected to aluminium nitride
On substrate, the aluminium nitride substrate is total to gold solder and is connected in red copper gold-plated stent.
Wherein, the VCSEL laser diodes outer cover is equipped with diaphragm, VCSEL laser diodes and aluminium nitride substrate
It is clamped on diaphragm and red copper gold-plated stent, and seals.
Wherein, the area coverage of the diaphragm is more than the area of VCSEL laser diodes and aluminium nitride substrate, and window
Clearance position between piece and red copper gold-plated stent is additionally provided with insulating layer sealing and fixes.
Wherein, VCSEL laser diodes include laser chip and the multiple point light sources being distributed on laser chip, Duo Gedian
Light source is in multiple spot orthogonal array structure distribution, and the light-emitting surfaces of multiple point light sources is towards diaphragm position.
Wherein, the aluminium nitride substrate is thermoelectric separated aluminum nitride ceramic substrate.
The beneficial effects of the utility model are：Compared with prior art, the utility model provides a kind of based on VCSEL laser
The packaging substrate structure of diode, using VCSEL laser diodes be total to gold solder be connected to after aluminium nitride substrate again be total to gold solder be connected to
In red copper gold-plated stent, most rear cover diaphragm is sealed.The utility model is electrically separated using second heat, has completely cut off aluminum-nitride-based
The too thin caused chip leaky of plate；It eliminates pin in encapsulation process and is stained with insecure phenomenon with glue, it is easier to processing and volume production.
It is damaged after being easily covered with dust due to VCSEL laser chips, the reliability to improve VCSEL laser chips has especially added diaphragm warp
The sealing of the silica gel of high transmittance, so that the VCSEL laser diodes after encapsulation are more reliable.
Description of the drawings
Fig. 1 is packaging substrate structure sectional view of the utility model embodiment based on VCSEL laser diodes；
Fig. 2 is the utility model embodiment VCSEL laser diode structure schematic diagrames.
Main element symbol description is as follows：
1st, VCSEL laser diodes 2, red copper gold-plated stent
3rd, aluminium nitride substrate 4, diaphragm
5th, insulating layer 11, laser chip
12nd, multi-point source.
Specific embodiment
In order to more clearly state the utility model, the utility model is further described below in conjunction with the accompanying drawings.
- Fig. 2 is please referred to Fig.1, the utility model discloses a kind of packaging substrate structure based on VCSEL laser diodes, bag
VCSEL laser diodes 1,2 aluminium nitride substrate 3 of red copper gold-plated stent are included, VCSEL laser diodes 1 are total to gold solder and are connected to aluminium nitride
On substrate 3, aluminium nitride substrate 3 is total to gold solder and is connected in red copper gold-plated stent 2, and in the present embodiment, aluminium nitride substrate 3 is thermoelectricity point
From formula aluminum nitride ceramic substrate, because being by the way of gold sintering altogether, the heat expansion of VCSEL laser diodes and aluminium nitride material is cold
Contracting coefficient is closer, will not cause the chip cracks on VCSEL laser diodes, and solder joint ensures in a manner that gold solder connects altogether
Very high temperature and the reliability under pole low temperature environment, second heat is electrically separated, completely cut off aluminium nitride substrate it is too thin caused by chip leakage
Electrical phenomena eliminates pin in encapsulation process and is stained with insecure phenomenon with glue, it is easier to which processing and volume production can be protected using after such encapsulation
Card 80 degree of low temperature -40 of high temperature spend the reliability that chip uses, and can extensively use to vehicle night vision or military field model, due to being secondary
Gold encapsulation altogether, chip removes division from bottom needs 500 degree or more high temperature that could separate, and chip package is more reliable, is suitable for disliking
Bad environment.
In the present embodiment, 1 outer cover of VCSEL laser diodes is equipped with diaphragm 4, VCSEL laser diodes 1 and nitrogen
Change aluminum substrate 3 to be clamped on diaphragm 4 and red copper gold-plated stent 2, and seal.The area coverage of diaphragm 4 is more than VCSEL laser
The area of diode 1 and aluminium nitride substrate 3, and the clearance position between diaphragm 4 and red copper gold-plated stent 2 is additionally provided with insulation
5 sealing of layer is fixed, and in the present embodiment, insulating layer 5 employs the silica gel of high transmittance, so that the laser diode after encapsulation
It is more reliable, and using glass window piece 4, VCSEL laser diodes 1 and aluminium nitride substrate 3 effectively inside protection, and avoid ash
Dirt and steam enter, and improve the service life of VCSEL laser diodes 1 and aluminium nitride substrate 3.
In the present embodiment, VCSEL laser diodes 1 include laser chip 11 and the multiple points being distributed on laser chip
Light source 12, multiple point light sources 12 are in multiple spot orthogonal array structure distribution, the light-emitting surfaces of multiple point light sources 12 towards diaphragm position,
Be conducive to light to transmit away.
The advantage of the utility model is：
1）The utility model uses the packaging substrate structure based on VCSEL laser diodes, VCSEL laser diodes and nitrogen
Changing aluminum substrate, gold solder is connected on the gold-plated thermoelectric insulation support of red copper altogether again after high temperature altogether gold；Second heat is electrically separated, isolation
The too thin caused chip leaky of aluminium nitride substrate, eliminates pin in encapsulation process and is stained with insecure phenomenon with glue, it is easier to add
Work；
2）It can guarantee that 80 degree of low temperature -40 of high temperature spend the reliability of laser chip work using such encapsulating structure, it can wide model
With to vehicle night vision or military field.
3）Due to being secondary gold encapsulation altogether, chip removes division from bottom needs 500 degree or more high temperature that could separate, chip envelope
It fills more reliable.
4）The pin that elimination laser chip pin is stained with adhesive tape comes off, thus the hidden danger of failure,
5）It is dust-proof, make the laser diode after encapsulation that can also work in the case where working environment dust is very big, so as to
Promote the service life and reliability of product.
Disclosed above is only several specific embodiments of the utility model, but the utility model is not limited to this,
The changes that any person skilled in the art can think of should all fall into the scope of protection of the utility model.
Claims (5)
1. a kind of packaging substrate structure based on VCSEL laser diodes, which is characterized in that including VCSEL laser diodes, purple
Copper gold-plated stent and aluminium nitride substrate, VCSEL laser diodes are total to gold solder and are connected on aluminium nitride substrate, and the aluminium nitride substrate is total to
Gold solder is connected in red copper gold-plated stent.
2. the packaging substrate structure according to claim 1 based on VCSEL laser diodes, which is characterized in that described
VCSEL laser diodes outer cover is equipped with diaphragm, and VCSEL laser diodes and aluminium nitride substrate are clamped in diaphragm and red copper
In gold-plated stent, and seal.
3. the packaging substrate structure according to claim 2 based on VCSEL laser diodes, which is characterized in that the window
The area coverage of mouthful piece is more than the area of VCSEL laser diodes and aluminium nitride substrate, and diaphragm and red copper gold-plated stent it
Between clearance position be additionally provided with silicone insulation layer sealing fix.
4. the packaging substrate structure according to claim 1 based on VCSEL laser diodes, which is characterized in that VCSEL swashs
Optical diode includes laser chip and the multiple point light sources being distributed on laser chip, and multiple point light sources are in multiple spot orthogonal array knot
Structure is distributed, and the light-emitting surfaces of multiple point light sources is towards diaphragm position.
5. the packaging substrate structure according to claim 1 based on VCSEL laser diodes, which is characterized in that the nitrogen
Change aluminum substrate is thermoelectric separated aluminum nitride ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721216251.9U CN207409795U (en) | 2017-09-21 | 2017-09-21 | Packaging substrate structure based on VCSEL laser diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721216251.9U CN207409795U (en) | 2017-09-21 | 2017-09-21 | Packaging substrate structure based on VCSEL laser diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207409795U true CN207409795U (en) | 2018-05-25 |
Family
ID=62406173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721216251.9U Expired - Fee Related CN207409795U (en) | 2017-09-21 | 2017-09-21 | Packaging substrate structure based on VCSEL laser diodes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207409795U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165545A (en) * | 2019-05-06 | 2019-08-23 | 江苏稳润光电科技有限公司 | A kind of high power laser light device and preparation method thereof |
-
2017
- 2017-09-21 CN CN201721216251.9U patent/CN207409795U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165545A (en) * | 2019-05-06 | 2019-08-23 | 江苏稳润光电科技有限公司 | A kind of high power laser light device and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190429 Address after: 528437 Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: SHENLIANG INTELLIGENT TECHNOLOGY (ZHONGSHAN) Co.,Ltd. Address before: 518000 New Material Port, No. 2 Changyuan New Material Port, High-tech Middle Road, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, 9 buildings and 10 floors Patentee before: SHENZHEN XINLIANG INTELLIGENT TECHNOLOGY CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528437 Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: Xinliang Intelligent Technology (Zhongshan) Co.,Ltd. Address before: 528437 Torch Development Zone, Zhongshan City, Guangdong Province Patentee before: SHENLIANG INTELLIGENT TECHNOLOGY (ZHONGSHAN) Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180525 Termination date: 20210921 |