CN207398165U - Light emitting diode - Google Patents
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- CN207398165U CN207398165U CN201721377414.1U CN201721377414U CN207398165U CN 207398165 U CN207398165 U CN 207398165U CN 201721377414 U CN201721377414 U CN 201721377414U CN 207398165 U CN207398165 U CN 207398165U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 230000005611 electricity Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- -1 magnesium nitride Chemical class 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 210000003771 C cell Anatomy 0.000 description 1
- 210000004128 D cell Anatomy 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011848 phosphorous-based material Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
The utility model discloses a kind of light emitting diode, including：Semiconductor layer stack, comprising：The first conductive type semiconductor layer, the second conductive type semiconductor layer being arranged on the first conductive type semiconductor layer, the luminescent layer being arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer；First electrode and second electrode, the first electrode are electrically connected with the first conductive type semiconductor layer, and the second electrode is located on the second conductive type semiconductor layer and is electrically connected with the second conductive type semiconductor layer；The first electrode includes several first sub-electrodes, and the second electrode includes several second sub electrodes；It is characterized in that：Projector distance between two the first sub-electrodes and/or second sub electrode of arbitrary neighborhood is equal.
Description
Technical field
The utility model is related to semiconductor element, more particularly, to a kind of light emitting diode.
Background technology
Light emitting diode（English is Light Emitting Diode, is abbreviated as LED）Due to low with long lifespan, energy consumption
The advantages that, applied to various fields, wherein with gallium nitride（GaN）For representative Group III-V compound semiconductor due to having band
The features such as gap is wide, luminous efficiency is high, electronics saturation drift velocity is high, chemical property is stablized, in high brightness LED, laser
The field of optoelectronic devices such as device have huge application potential, cause the extensive concern of people.
Fig. 1 is to represent a kind of structure diagram of known light emitting diode.Lumination of light emitting diode element includes：Substrate
(100)；The buffer layer (200) grown on substrate (100)；The n-type semiconductor layer (300) grown on buffer layer (200)；
The active layer (400) grown in n-type semiconductor layer (300)；The p-type semiconductor layer (500) grown on active layer (400)；Shape
Into in p-type semiconductor layer (500), and realize the light transmitting conductive film (600) of current spread function；It is formed in transparent conductive
P side engagements pad (700) on film (600)；And exposed by etching, and the n being formed in n-type semiconductor layer (300)
Side engagement pad (800).Also, possesses distributed Bragg reflector (900 on light transmitting conductive film (600)；DBR：
Distributed Bragg Reflector) and metallic reflective coating (904).According to this structure, although light quilt can be reduced
Metallic reflective coating (904) absorbs, but with being compared using the situation of electrode (901,902,903), relatively current spread is not suitable enough
Freely.
Utility model content
To solve above-mentioned the deficiencies in the prior art, the utility model proposes a kind of light emitting diode, including：Partly lead
Body laminated body, comprising：The first conductive type semiconductor layer, the second conductive type being arranged on the first conductive type semiconductor layer half
Conductor layer, the luminescent layer being arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer；First
Electrode and second electrode, the first electrode are electrically connected with the first conductive type semiconductor layer, and the second electrode is located at institute
It states on the second conductive type semiconductor layer and is electrically connected with the second conductive type semiconductor layer；The first electrode includes several
First sub-electrode, the second electrode include several second sub electrodes；It is characterized in that：Two first son electricity of arbitrary neighborhood
Projector distance between pole and/or second sub electrode is equal.
Preferably, the first electrode and/or second electrode include 6 the first sub-electrodes and/or second sub electrode forms
The close-packed hexagonal structure of minimum unit.
Preferably, centered on the close-packed hexagonal structure is including 1 the first sub-electrode or 1 second sub electrode.
Preferably, the close-packed hexagonal structure includes 6 the first sub-electrodes either 6 second sub electrodes or 2 first
Sub-electrode and 4 second sub electrodes or 4 the first sub-electrodes and 2 second sub electrodes.
Preferably, the close-packed hexagonal structure includes 3 the first sub-electrodes and 3 second sub electrodes.
Preferably, first sub-electrode is staggered with second sub electrode.
Preferably, the equilateral triangle structure of 3 the first sub-electrodes composition minimum unit, the 3 second sons electricity
Pole forms the equilateral triangle structure of minimum unit.
Preferably, the number of first sub-electrode is less than or equal to the number of second sub electrode.
Preferably, the ratio of the number of the number and second sub electrode of first sub-electrode is between 0.3 ~ 0.9.
Preferably, the spacing of two adjacent first sub-electrodes is between 10 ~ 150 μm, described adjacent two second
The spacing of sub-electrode is between 10 ~ 150 μm.
The utility model includes at least following advantageous effect：
（1）The first sub-electrode in above-mentioned light emitting diode construction is uniformly independently distributed with second sub electrode, arbitrary neighborhood
Two the first sub-electrodes and/or second sub electrode between projector distance it is equal, first electrode does not interconnect independently, and first is conductive
The platform etching area of type semiconductor layer is reduced, and so as to increase luminous zone area, second electrode does not interconnect independently so that luminous zone
It is joined to insulating layer（Such as DBR reflecting layer）Area maximize, increase emitting brightness；
（2）All sub-electrode uniform array distributions, between two the first sub-electrodes and/or second sub electrode of arbitrary neighborhood
Projector distance it is equal so that scattered current distribution optimize, and reduce forward voltage drop（VF）.
Other feature and advantage of the utility model will illustrate in the following description, also, partly from specification
In become apparent or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and obtained in specification, claims and attached drawing.
Although the utility model, this field skill are described hereinafter in connection with some exemplary implementations and application method
Art personnel should be understood, it is no intended to which the utility model is limited to these embodiments.It is on the contrary, it is intended to which that covering is included in appended
All substitutes, amendment and equivalent in the spirit and scope of the utility model as defined in the claims.
Description of the drawings
Attached drawing is used to provide a further understanding of the present invention, and a part for constitution instruction, with this practicality
New embodiment for explaining the utility model, does not form the limitation to the utility model together.In addition, attached drawing data are to retouch
Summary is stated, is not drawn to scale.
Fig. 1 is the structure diagram of known light emitting diode.
Fig. 2 is the top view of the light emitting diode of the utility model embodiment 1.
Fig. 3 is cross-sectional views of the Fig. 2 along A-A ' directions.
Fig. 4 is the top view of the light emitting diode of the utility model embodiment 2.
Fig. 5 is the top view of the light emitting diode of the utility model embodiment 3.
It is indicated in figure：100：Substrate；200：Semiconductor layer stack； 201：The first conductive type semiconductor layer；202：It shines
Layer；203：The second conductive type semiconductor layer；300：Insulating layer；400A：First electrode；400B：Second electrode；401：First son electricity
Pole；402：Second sub electrode.
Specific embodiment
The embodiment of the utility model is described in detail below with reference to accompanying drawings and embodiments, whereby to the utility model
How application technology means solve technical problem, and the realization process for reaching technique effect can fully understand and implement according to this.
If it should be noted that do not form conflict, each feature in each embodiment and each embodiment in the utility model
It can be combined with each other, the technical solution formed is within the scope of protection of the utility model.
Embodiment 1
As shown in Figures 2 and 3, a kind of light emitting diode, including：Substrate 100；Semiconductor layer stack 200, positioned at substrate 100
On, comprising：The first conductive type semiconductor layer 201, the second conductive type being arranged on the first conductive type semiconductor layer 201 are partly led
Body layer 203, the luminescent layer 202 being arranged between the first conductive type semiconductor layer 201 and the second conductive type semiconductor layer 203；The
One electrode 400A and second electrode 400B, first electrode 400A are electrically connected with the first conductive type semiconductor layer 201, second electrode
400B is located on the second conductive type semiconductor layer 203 and is electrically connected with the second conductive type semiconductor layer 203；First electrode 400A bags
Several the first sub-electrodes 401 are included, second electrode 400B includes several second sub electrodes 402；Insulating layer 300, positioned at partly leading
The surface of body laminated body is except the region of first electrode 400A and second electrode 400B.
Specifically, substrate 100, which is chosen, includes but not limited to sapphire, aluminium nitride, gallium nitride, silicon, carborundum, surface
Structure can be planar structure or patterning graph structure, and in the present embodiment, preferably sapphire is as substrate 100；Semiconductor multilayer
The material of body can include gallium nitride-based material, phosphatization gallium based material, gallium nitrogen phosphorous-based materials or zinc oxide based material, in this implementation
Example in, semiconductor layer stack be gallium nitride-based material, epitaxial layer include be cascading from bottom to top n type semiconductor layer,
Luminescent layer and p type semiconductor layer, wherein, n type semiconductor layer is N-GaN layers, and luminescent layer is aluminium gallium nitride alloy（AlGaN）Multiple quantum wells
（MQW）Active layer, p type semiconductor layer are P-GaN layers.Semiconductor layer stack structure in the present embodiment is not limited to N-type GaN layer
Structure-AlGaN multiple quantum well active layers-p-type GaN layer or other can excite the epitaxial layer structure of light extraction.Insulating layer
300, magnesium nitride (Mg can be selectedxNy) or silicon nitride (SixNy) or silica (SixOy) or titanium oxide (TixOy) or zirconium oxide
(ZrxOy) or hafnium oxide (HfxOy) or other materials (such as polyimides or polytetrafluoroethylene (PTFE) or Parylene polymer
Deng), as insulating layer 300, which rolls over for preferred high index of refraction titanium oxide and low-refraction silica combinations in the present embodiment
Penetrate the alternate material composition distributed Bragg reflecting layer of rate（DBR）, can be used for reflecting the light that luminescent layer is sent.
Please referring back to Fig. 2, the first sub-electrode, second sub electrode can be circular or square, hexagon or its
The polygon of his rule, the present embodiment are preferably circular；Each first sub-electrode or second sub electrode are uniformly independently distributed, arbitrarily
Projector distance between two adjacent the first sub-electrodes and/or second sub electrode is equal, and the distance is any two first
Most short spacing between sub-electrode and/or second sub electrode, the spacing of adjacent two the first sub-electrodes are excellent between 10 ~ 150 μm
In 50 ~ 100 μm, the spacing of adjacent two second sub electrodes is preferably between 50 ~ 100 μm between 10 ~ 150 μm for selected introductions.First electricity
Pole and/or second electrode include the close-packed hexagonal structure of 6 the first sub-electrodes and/or second sub electrode composition minimum unit,
So as to fulfill the maximized close-packed arrays of sub-electrode.From A units（A Cell）As can be seen that close-packed hexagonal structure is with 1
Centered on one sub-electrode, including 3 the first sub-electrodes 401 and 3 second sub electrodes 402, the first sub-electrode and the second son electricity
In being staggered, 3 first sub-electrodes form the equilateral triangle structure of minimum unit for pole.From unit B（A Cell）It can
To find out, close-packed hexagonal structure includes 3 the first sub-electrodes 401 and 3 second sub electrodes 402, the first sub-electrode and second
For sub-electrode in being staggered, 3 second sub electrodes form the equilateral triangle structure of minimum unit.From C cell（A
Cell）As can be seen that close-packed hexagonal structure is centered on 1 the first sub-electrode, including 6 second sub electrodes.
It should be noted that since the main function of first electrode, second electrode is current spread and and semiconductor multilayer
Body forms Ohmic contact and uses, so if first electrode is better than second electrode and semiconductor layer with semiconductor layer stack Ohmic contact
Stack ohm connects, then the number preferably with preferable first sub-electrode of semiconductor layer stack Ohmic contact, compared with second sub electrode
Number is few, and the ratio of the number of the first sub-electrode and the number of second sub electrode can be between 0.3 ~ 0.9.
Light emitting diode construction provided in this embodiment, wherein the first sub-electrode is uniformly independently distributed with second sub electrode,
Projector distance between two the first sub-electrodes and/or second sub electrode of arbitrary neighborhood is equal, and first electrode does not interconnect independently,
The platform etching area of the first conductive type semiconductor layer is reduced, and so as to increase luminous zone area, second electrode is not interconnected independently, made
It obtains luminous zone and is joined to insulating layer（Such as DBR reflecting layer）Area maximize, increase emitting brightness；All sub-electrode uniform arrays
Distribution, the projector distance between two the first sub-electrodes and/or second sub electrode of arbitrary neighborhood are equal so that scattered current point
Cloth optimizes, and reduces forward voltage drop（VF）.
Embodiment 2
The structure diagram of another light emitting diode of Fig. 4 displays.It is same as Example 1, described in the present embodiment
In light emitting diode construction, first electrode, second electrode include 6 the first sub-electrodes and/or second sub electrode composition is minimum
The close-packed hexagonal structure of unit.It is different from embodiment 1, in the light emitting diode construction described in the present embodiment, the first son electricity
The number of pole is equal to the number of second sub electrode.From D units（D Cell）As can be seen that close-packed hexagonal structure is with 1 second son
Centered on electrode, including 4 the first sub-electrodes and 2 second sub electrodes, wherein 4 the first sub-electrodes composition rectangle structures, 2
A second sub electrode is located at 1 second sub electrode positioned at close-packed hexagonal structure center on same line；From E units（E
Cell）As can be seen that close-packed hexagonal structure is centered on 1 the first sub-electrode, it is sub including 2 the first sub-electrodes and 4 second
Electrode, wherein 4 second sub electrodes composition rectangle structures, 2 the first sub-electrodes with positioned at 1 of close-packed hexagonal structure center
First sub-electrode is located on same line.
Embodiment 3
Fig. 5 shows the structure diagram of another light emitting diode.It is same as Example 2, described in the present embodiment
In light emitting diode construction, close-packed hexagonal structure includes 2 the first sub-electrodes and 4 second sub electrodes or 4 first son electricity
Pole and 2 second sub electrodes.It is different from embodiment 2, in the light emitting diode construction described in the present embodiment, the first sub-electrode
Number be less than second sub electrode number, specifically the ratio of the number of the number and second sub electrode of the first sub-electrode be
8:9, between 0.3 ~ 0.9.From F cell（F Cell）As can be seen that close-packed hexagonal structure using 1 the first sub-electrode in
The heart, including 2 the first sub-electrodes and 4 second sub electrodes, wherein 2 the first sub-electrodes are with being located at close-packed hexagonal structure center
1 the first sub-electrode forms isosceles triangle；From G units（F Cell）As can be seen that close-packed hexagonal structure is with 1 second son electricity
Extremely center, including 4 the first sub-electrodes and 2 second sub electrodes, wherein 2 second sub electrodes are with being located at close-packed hexagonal structure
1 the first sub-electrode composition isosceles triangle at center.
It should be noted that embodiment of above is merely to illustrate the utility model, and it is new to be not intended to limit this practicality
Type, those skilled in the art in the case where not departing from the spirit and scope of the utility model, can do the utility model
Go out various modifications and variation, therefore all equivalent technical solutions fall within the scope of the utility model, the utility model it is special
Sharp protection domain should regard Claims scope and limit.
Claims (10)
1. light emitting diode, including：Semiconductor layer stack, comprising：The first conductive type semiconductor layer is arranged in first conduction
The second conductive type semiconductor layer in type semiconductor layer is arranged in the first conductive type semiconductor layer and the second conductive type
Luminescent layer between semiconductor layer；First electrode and second electrode, the first electrode and the first conductive type semiconductor layer
Electrical connection, the second electrode are located on the second conductive type semiconductor layer and are electrically connected with the second conductive type semiconductor layer
It connects；The first electrode includes several first sub-electrodes, and the second electrode includes several second sub electrodes；Its feature exists
In：Projector distance between two the first sub-electrodes and/or second sub electrode of arbitrary neighborhood is equal.
2. light emitting diode according to claim 1, it is characterised in that：First sub-electrode and/or second sub electrode
Close-packed hexagonal structure including 6 the first sub-electrodes and/or second sub electrode composition minimum unit.
3. light emitting diode according to claim 2, it is characterised in that：The close-packed hexagonal structure includes 1 first son
Centered on electrode or 1 second sub electrode.
4. light emitting diode according to claim 2, it is characterised in that：The close-packed hexagonal structure includes 6 first sons
Electrode either 6 second sub electrodes or 2 the first sub-electrodes and 4 second sub electrodes or 4 the first sub-electrodes and 2
Two sub-electrodes.
5. light emitting diode according to claim 2, it is characterised in that：The close-packed hexagonal structure includes 3 first sons
Electrode and 3 second sub electrodes.
6. light emitting diode according to claim 5, it is characterised in that：First sub-electrode interlocks with second sub electrode
Arrangement.
7. light emitting diode according to claim 5, it is characterised in that：3 first sub-electrodes form minimum unit
Equilateral triangle structure, the equilateral triangle structure of 3 second sub electrodes composition minimum unit.
8. light emitting diode according to claim 1, it is characterised in that：The number of first sub-electrode is less than or equal to
The number of second sub electrode.
9. light emitting diode according to claim 1, it is characterised in that：The number of first sub-electrode and the second son electricity
The ratio of the number of pole is between 0.3 ~ 0.9.
10. light emitting diode according to claim 1, it is characterised in that：Between two adjacent first sub-electrodes
Away between 10 ~ 150 μm, the spacing of two adjacent second sub electrodes is between 10 ~ 150 μm.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721377414.1U CN207398165U (en) | 2017-10-24 | 2017-10-24 | Light emitting diode |
| US16/147,763 US10707380B2 (en) | 2017-10-24 | 2018-09-30 | Light-emitting diode |
| US16/887,877 US10825957B1 (en) | 2017-10-24 | 2020-05-29 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721377414.1U CN207398165U (en) | 2017-10-24 | 2017-10-24 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207398165U true CN207398165U (en) | 2018-05-22 |
Family
ID=62329910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721377414.1U Active CN207398165U (en) | 2017-10-24 | 2017-10-24 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207398165U (en) |
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2017
- 2017-10-24 CN CN201721377414.1U patent/CN207398165U/en active Active
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Effective date of registration: 20231018 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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