CN207397671U - Electronic device - Google Patents

Electronic device Download PDF

Info

Publication number
CN207397671U
CN207397671U CN201721532241.6U CN201721532241U CN207397671U CN 207397671 U CN207397671 U CN 207397671U CN 201721532241 U CN201721532241 U CN 201721532241U CN 207397671 U CN207397671 U CN 207397671U
Authority
CN
China
Prior art keywords
bump
electronic device
width
micro drives
drives chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201721532241.6U
Other languages
Chinese (zh)
Inventor
刘奕成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AU Optronics Corp
Original Assignee
AU Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AU Optronics Corp filed Critical AU Optronics Corp
Application granted granted Critical
Publication of CN207397671U publication Critical patent/CN207397671U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Wire Bonding (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The utility model provides an electronic device, include bearing substrate, a plurality of salient point group and a plurality of miniature driver chip. The bearing substrate is provided with a bearing surface, wherein the salient points are arranged on the bearing surface. Each bump group comprises a plurality of bumps; the micro-driving chips correspond to the plurality of bump groups respectively. Each micro-driving chip has a plurality of alignment holes for receiving the bumps in the corresponding bump set.

Description

Electronic device
Technical field
The utility model provides a kind of electronic device;Particularly a kind of electronic device that can be used for display.
Background technology
With display Progress & New Products, display device is had been widely used among human lives, is such as applied to running gear, tablet Computer etc..
Typical display device has pixel display unit and pixel-driving circuit.Pixel-driving circuit is driving pixel Display unit is shown and (such as makes liquid crystal deflection or light-emitting component is made to shine).In the typical practice, pixel-driving circuit can It is directly arranged on glass substrate and realized with thin film transistor (TFT).
It, can be by pixel-driving circuit chip, with the area of micro pixel-driving circuit in some ways.However, In such way, in transposition pixel driver chip to substrate, pixel driver chip such as is easily caused to contact due to contraposition deviation It is bad to wait negative effect.
Utility model content
The application one implements pattern and is related to a kind of electronic device.According to one embodiment of the application, electronic device includes and holds Carried base board, multiple bump groups and multiple micro drives chips.Bearing substrate has loading end.Bump group is arranged on loading end. Multiple bumps are included in each bump group.Micro drives chip corresponds to the plurality of bump group respectively.Each micro drives chip tool There are multiple registration holes to accommodate the bump in corresponding bump group respectively.
By utilization one embodiment of the application, you can the correspondence being transposed to micro drives chip exactly on bearing substrate Position, and the contraposition after transposition is avoided to be not allowed, promote the display quality of electronic device.
Description of the drawings
Figure 1A is the schematic diagram of the electronic device according to depicted in one embodiment of the application;
Figure 1B is the portion of element constitutional diagram of the electronic device according to depicted in one embodiment of the application
Fig. 2A, Fig. 2 B, Fig. 2 C, the transposition that Fig. 2 D is the micro drives chip DRC according to depicted in one embodiment of the application The schematic diagram of operation;
Fig. 3 A, Fig. 3 B, the signal that Fig. 3 C are the micro drives chip according to depicted in one embodiment of the application and bump PL Figure;
Fig. 4 A, Fig. 4 B, Fig. 4 C are micro drives chip according to depicted in another embodiment of the application and bump PL shows It is intended to;
Fig. 5 A, Fig. 5 B, Fig. 5 C are micro drives chip according to depicted in another embodiment of the application and bump PL shows It is intended to;
Fig. 6 A, Fig. 6 B, Fig. 6 C, the structure diagram that Fig. 6 D is the electronic device according to depicted in one embodiment of the application;
Fig. 7 A- Fig. 7 B are the structure diagram of the electronic device according to depicted in another embodiment of the application;
Fig. 8 A- Fig. 8 B are the structure diagram of the electronic device according to depicted in another embodiment of the application;
Fig. 9 A- Fig. 9 B are the structure diagram of the electronic device according to depicted in another embodiment of the application;
Figure 10 is the structure diagram of the electronic device according to depicted in another embodiment of the application;
Figure 11 A, Figure 11 B, Figure 11 C are the part processing procedure signal of the electronic device according to depicted in another embodiment of the application Figure;
Figure 12 A- Figure 12 B are the structure diagram of the electronic device according to depicted in another embodiment of the application;And
Figure 13 A- Figure 13 B are the structure diagram of the electronic device according to depicted in another embodiment of the application.
Wherein, reference numeral:
100 electronic devices
SBT bearing substrates
SB substrates
S1 substrates
S2 insulating layers
S3 viscous layers
PLG bump groups
DRC micro drives chips
CSF loading ends
PL bumps
TSF top surfaces
BSF bottom surfaces
PSW registration holes
ST1-ST7 is operated
CRR microscope carriers
ADL elastomers
D1-D3 directions
L1, L12-L17, L23-L27, L32-L35 width
W1, W12-W14, W16-W17, W22-W24, W32, W34-37, WP width
H1, H12, H22, H32 width
SPC1-SPC3 gaps
The miniature luminescence units of LMC
CPD connection gaskets
CDT, CDT1, CDT2 conducting wire
CDL conductive layers
LPD1, LPD2 electrode
LML luminescent layers
BMX light shield layers
EXP notches
Specific embodiment
To the spirit of this disclosure clearly be illustrated with schema and in detail narration below, any those skilled in the art exist After the embodiment for solving this disclosure, when the technology that can be taught by this disclosure, it is changed and modifies, without departing from The spirit and scope of this disclosure.
On its " first " used herein, " second " ... etc., not especially censure the meaning of order or cis-position, also It is non-to limit the utility model, only for distinguish with same technique term description element or operation.
On its " electrical connection " used herein, can refer to two or multiple element mutually directly make entity or in electrical contact, Or mutually put into effect indirectly body or in electrical contact, and " electrical connection " also can refer to two or multiple element mutual operation or action.
It is open term, i.e., on "comprising" used herein, " comprising ", " having ", " containing " etc. Mean including but not limited to.
On it is used herein it " and/or ", be including any of the things or all combination.
" about " used herein, " substantially " or " substantially " include described value and determining in those of ordinary skill in the art Particular value acceptable deviation range in average value, it is contemplated that the measurement that is discussed and the spy with measuring relevant error Fixed number amount (that is, the limitation of measuring system).For example, " about " can represent in one or more standard deviations of described value or ± 30%, in ± 20%, ± 10%, ± 5%.Furthermore " about " used herein, " substantially " or " substantially " can be according to optical Matter, etching property or other properties to select more acceptable deviation range or standard deviation, and can not have to a standard deviation It is applicable in whole property.
Exemplary embodiment is described herein with reference to the sectional view of the schematic diagram as idealized embodiments.It therefore, can be with Anticipate the change in shape of the diagram of the result as such as manufacturing technology and/or tolerance.Therefore, embodiment as described herein is not The given shape in region as illustrated herein should be construed as limited to, but including the form variations for example as caused by manufacture.Example Such as, coarse and/or nonlinear characteristic can usually be had by being illustrated and described as flat region.In addition, shown acute angle can be with It is arc.Therefore, region shown in figure is substantially schematical, and their shape is not intended to the essence for showing region True shape, and not it is intended to the scope of limitation claim.
On direction term used herein, such as:Upper and lower, left and right, front or rear etc. are only with reference to annexed drawings Direction.Therefore, the direction term used is intended to be illustrative and not intended to limit the application.
On word (terms) used herein, in addition to having and especially indicating, usually with each word using herein In field, at this in content of exposure with the usual meaning in special content.It is some will be under to describe the word of this exposure Or discussed in the other places of this specification, to provide those skilled in the art's guiding additional in the description in relation to this exposure.
Figure 1A is the schematic diagram of the electronic device 100 according to depicted in one embodiment of the application, and Figure 1B is according to this Shen The portion of element constitutional diagram of electronic device 100 that please be depicted in an embodiment.In the present embodiment, electronic device 100 includes holding Carried base board SBT, multiple bump group PLG and multiple micro drives chip DRC.In the present embodiment, micro drives chip DRC (micro-driving chip or namely micro-chip) be electrically connected and driving pixel circuit (such as:Micro drives Chip DRC is electrically connected and multiple miniature luminescence unit LMC is driven to shine), and micro drives chip DRC may be disposed at electricity In the range of the viewing area (active area, or namely display region) of sub-device 100.Micro drives chip DRC Full-size, such as:It is approximately less than 300 microns (micrometers, μm), and more than 0 micron, but not limited to this.In Figure 1A and figure In 1B, the quantity of bump group PLG and micro drives chip DRC be only other quantity of illustration on illustrating also the application scope it In.In other embodiments, when electronic device 100 can be display device, multiple miniature luminescence unit LMC can be further included and be electrically connected Single a micro drives chip DRC is connected to, and after micro drives chip DRC cooperations related to miniature luminescence unit LMC refer to Continuous paragraph description, it is no longer illustrated in this paragraph.
In the present embodiment, bearing substrate SBT has loading end CSF.Bump group PLG is arranged at holding for bearing substrate SBT On section CSF.Each bump group PLG includes multiple bump PL.Those micro drives chips DRC corresponds to different bump groups respectively PLG。
Each micro drives chip DRC has top surface TSF and bottom surface BSF.The court of top surface TSF and loading end CSF To identical, and bottom surface BSF it is opposite with the direction of loading end CSF (such as:Bottom surface BSF and loading end CSF is face-to-face).Push up table Face TSF compared to bottom surface BSF away from loading end CSF, and bottom surface BSF compared to top surface TSF adjacent to loading end CSF.Often One micro drives chip DRC has multiple registration holes PSW.These registration holes PSW is respectively accommodating corresponding bump group PLG In bump PL.For example, the bump PL in bump group PLG respectively to be inserted in corresponding registration holes PSW among, with limit Positions of the micro drives chip DRC processed on bearing substrate SBT.Though it should be noted that with each bump group in Figure 1A and Figure 1B PLG, which has exemplified by 2 bump PL and each micro drives chip DRC have 2 registration holes PSW, to be illustrated, and right other quantity also exist Among the application scope.
In one embodiment, bump PL can be single or multi-layer structure, and its material can be organic material, inorganic material Or other suitable materials.The bump PL of the present embodiment for example can be formed as example with photoresist, but not limited to this.The present embodiment it The manufacturing method of bump PL, for example, the specific portion of photoresist layer can first be covered with shielding, then again in a manner of such as etching etc. The part that photoresist layer is not covered is removed, and photoresist can be transparent or with color, such as:Black, polychrome storehouse, color are sat Any one color in mark.Thus, because bump PL can be formed by the photoresist retained when shielding and covering.It should be noted that It arrives, above description is only to illustrate, and bump PL can also use other materials or other means formation, be not limited with above-described embodiment.
In one embodiment, registration holes PSW can for example use Laser drill (laser drill) or silicon through hole (through Silicon via) etc. technologies realize that right the application is not limited.
It is micro- according to depicted in one embodiment of the application referring concurrently to Fig. 2A, Fig. 2 B, Fig. 2 C, Fig. 2 D, Fig. 2A to Fig. 2 D The schematic diagram of the transposition operation of type driving chip DRC.
In ST1 is operated, the microscope carrier CRR of transposition equipment is moved on the substrate SB with micro drives chip DRC. In one embodiment, microscope carrier CRR can have transparent windows (not illustrating), to confirm microscope carrier CRR positions.In one embodiment, Microscope carrier CRR directions object to be taken (such as:Micro drives chip DRC) inner surface may be provided with elastomer ADL.In an embodiment In, elastomer ADL tool stickiness, can be captured in the case where not damaging micro drives chip DRC micro drives chip DRC (such as: Object to be taken).In one embodiment, elastomer ADL is preferably transparent elastomer, on the other hand elastomer ADL can form microscope carrier CRR Transparent windows, increase the contraposition yield of object to be taken.In one embodiment, elastomer ADL can use dimethyl silicone polymer system Into right the application is not limited.
In ST2 is operated, using elastomer ADL crawl micro drives chips DRC.
In ST3 is operated, micro drives chip DRC is moved to bearing substrate SBT institutes from substrate SB using microscope carrier CRR On corresponding bump group PLG, the bump PL of bump group PLG is made to be directed at the registration holes PSW of micro drives chip DRC.Substrate SB It can be for example the knot of glass, quartz, ceramics, metal, alloy or other suitable materials or above-mentioned at least two material It closes, right the application is not limited.Bearing substrate SBT can be glass, quartz, ceramics, metal, alloy, organic for example Material (such as:Polyimide (polyimide;PI), polyethylene terephthalate (polyethylene terephthalate;PET), polyethylene naphthalate (polyethylene naphthalate;PEN), polyamide (polyamide;PA) or other suitable materials) or other suitable materials or above-mentioned at least two material combination.
In ST4 is operated, microscope carrier CRR corresponds to micro drives chip DRC from substrate SB transposition on bearing substrate SBT Bump PL in the position of bump group PLG, wherein bump group PLG is inserted in respectively among corresponding registration holes PSW, micro- to limit Positions of the type driving chip DRC on bearing substrate SBT.For example, the bump PL in bump group PLG is inserted in correspondence respectively Registration holes PSW among, can more limit micro drives chip DRC on bearing substrate SBT an at least direction (such as:X side Oblique direction between, Y-direction or XY directions) displacement.In one embodiment, can have on the loading end CSF of bearing substrate SBT There is an adhesive layer (being, for example, photoresist, and stickiness layer material can be referring again to subsequent descriptions), stickiness is glutinous more than elastomer ADL Property, in favor of micro drives chip DRC is transposed on bearing substrate SBT.
By above-mentioned operation and setting, you can micro drives chip DRC is transposed to exactly on bearing substrate SBT Correspondence position, to avoid offset when elastomer ADL is capturing micro drives chip DRC due to, cause the contraposition after transposition not It is accurate.
With reference to Fig. 3 A, Fig. 3 B, Fig. 3 C, in one embodiment, bump PL can substantially square column, and registration holes PSW can be substantially For square hole, but not limited to this.In one embodiment, micro drives chip DRC is being identical to the setting direction of registration holes PSW Width (or being length) W1 on first direction D1 can substantially 200 microns, in the second direction perpendicular to first direction D1 Width L1 on D2 can substantially 50 microns, and on the third direction D3 of the radial direction of registration holes PSW is identical to width (or For thickness) H1 can substantially 4 microns, but not limited to this.In one embodiment, first direction D1, second direction D2 and third party It is perpendicular to one another to D3.
In one embodiment, the width W12 of bump PL in the first direction dl can substantially 4 microns, in second direction D2 On width L12 can substantially 4 microns and the width H12 on third direction D3 can substantially 4 microns.In one embodiment, On third direction D3, the width H12 of bump PL may be configured as the width H1 no more than micro-move device chip DRC, and not less than energy Limit the rational width of the position of micro-move device chip DRC.The width W13 of registration holes PSW in the first direction dl can be substantially 10 microns and the width L13 in second direction wide 2 can substantially 10 microns.
In one embodiment, the spacing width L14 of the first side (such as upside) of registration holes PSW and micro-move device chip DRC can Substantially 20 microns, registration holes PSW with compared with micro-move device chip DRC the first side the second side (such as downside) spacing width L15 can substantially 20 microns, and registration holes PSW with adjacent to the first sides of micro-move device chip DRC and the 3rd side of the second side (as left Side) spacing width W14 can substantially 20 microns.
In one embodiment, when bump PL is inserted into registration holes PSW, there is gap SPC1 between bump PL and registration holes PSW. In the present embodiment, the width (such as width L16, width L17, width W16, width W17) of gap SPC1 is, for example, 3 microns. In one embodiment, the width of gap SPC1 can correspond to offset when elastomer ADL captures micro-move device chip DRC and set. In one embodiment, the width of gap SPC1 may be slightly larger than offset when elastomer ADL captures micro-move device chip DRC.For example, work as bullet Property body ADL crawl micro-move device chip DRC when offset substantially in 2 microns when, the width of gap SPC1 may be configured as 3 microns, To avoid in transposition micro-move device chip DRC bump PL can not be inserted into registration holes PSW.
With reference to Fig. 4 A to Fig. 4 C, in another embodiment, bump PL can be substantially cylindrical, and registration holes PSW can be substantially Round hole.In the present embodiment, the setting of micro-move device chip DRC width on first, second, third direction can be identical to foregoing Embodiment, therefore this will not be repeated here.
In this embodiment, the diameter width W22 of bump PL can substantially 4 microns and the width on third direction D3 Spending H22 can substantially 4 microns.In one embodiment, on third direction D3, the width H22 on bump PL may be configured as not surpassing The width H1 of micro-move device chip DRC is crossed, and not less than the rational width for the position that can limit micro-move device chip DRC.It is real one It applies in example, the diameter width W23 of registration holes PSW can substantially 10 microns.
In one embodiment, the spacing width L24 of the first side (such as upside) of registration holes PSW and micro-move device chip DRC can Substantially 20 microns, registration holes PSW with compared with micro-move device chip DRC the first side the second side (such as downside) spacing width L25 can substantially 20 microns, and registration holes PSW with adjacent to the first sides of micro-move device chip DRC and the 3rd side of the second side (as left Side) spacing width W24 can substantially 20 microns.
In one embodiment, when bump PL is inserted into registration holes PSW, there is gap SPC2 between bump PL and registration holes PSW. In the present embodiment, the width (such as L26, L27) of gap SPC2 is for example, about 3 microns, but not limited to this.In one embodiment, The width of gap SPC2 can correspond to offset when elastomer ADL captures micro drives chip DRC and set.It is a part of on this The foregoing paragraph corresponding to gap SPC1 is can refer to, therefore this will not be repeated here.
With reference to Fig. 5 A, Fig. 5 B, Fig. 5 C, in another embodiment, bump PL can substantially triangular prism, and registration holes PSW can Have a generally triangular shape hole.In the present embodiment, micro drives chip DRC width on first, second, third direction D1, D2, D3 Setting can be essentially the same as previous embodiment, therefore this will not be repeated here.
In this embodiment, the length of side width W32 of bump PL in the first direction dl can substantially 4 microns, and Width (or being thickness) H32 on three direction D1 can substantially 4 microns, but not limited to this.In one embodiment, in third party On D3, the width H32 on bump PL may be configured as the width H1 no more than micro drives chip DRC, and is not less than and can limit The firmly rational width of the position of micro drives chip DRC.In one embodiment, the width of registration holes PSW in a second direction d 2 L33 can substantially 10 microns, but not limited to this.
In one embodiment, the substantial phase of minimum spacing width of registration holes PSW and the either side of micro drives chip DRC Together, such as:The minimum spacing width L34 of the first side (such as upside) of registration holes PSW and micro drives chip DRC can be substantially 20 microns, registration holes PSW and the second side (such as downside) of the first side (such as upside) compared with micro drives chip DRC Minimum spacing width L35 can substantially 20 microns, and registration holes PSW with adjacent to the first sides of micro drives chip DRC and second The minimum spacing width W34 of 3rd side (such as left side) of side can substantially 20 microns be example, but not limited to this.In other implementations In example, registration holes PSW also can be different from the minimum spacing width of the wherein at least one side of micro drives chip DRC.Furthermore this reality The registration holes PSW on the left side that example is Fig. 5 C is applied with the spacing width of the either side of micro drives chip DRC to illustrate, when will be to scheme The spacing width of the either side of registration holes PSW and micro drives chip DRC on the right of 5A, which is also seen, understands it.
In one embodiment, when bump PL is inserted into registration holes PSW, there is gap SPC3 between bump PL and registration holes PSW. In the present embodiment, the width (such as W35, W36, W37) of gap SPC3 is, for example, about 3 microns, but not limited to this.In an embodiment In, the width of gap SPC2 can correspond to offset when elastomer ADL captures micro drives chip DRC and set.On this one Part can refer to the foregoing paragraph corresponding to gap SPC1, therefore this will not be repeated here.
It should be noted that the shape of Yi Shang bump PL and registration holes PSW substantially corresponding (such as bump PL and registration holes The shape of PSW is substantially the same) and numerical value be only to illustrate, other shapes and numerical value are also among the application scope.In other realities It applies in example, bump PL can be substantially not corresponding to the shape of registration holes PSW, but registration holes PSW can still accommodate bump PL and crawl Required deviant during micro drives chip DRC.
It should be noted that make narration simple, the implementation that paragraphs below all bump PL are square column and registration holes PSW is square hole Example is described, and right the application is not limited.
Fig. 6 A, Fig. 6 B, Fig. 6 C, 6D are can refer to, in one embodiment of the application, when electronic device 100 can be that display is set When standby, multiple miniature luminescence unit groups can be further included, have corresponded to different micro drives chip DRC respectively.In the present embodiment, Each miniature luminescence unit group includes multiple miniature luminescence unit LMC, and miniature luminescence unit LMC is electrically connected to micro drives core Piece DRC.The full-size of each miniature luminescence unit LMC is substantially less than 300 microns (um), and more than 0 micron, and miniature hair The full-size alternative of light unit LMC is essentially the same as or the full-size different from micro drives chip DRC.At this In embodiment, each micro drives chip DRC has multiple connection gasket CPD, and D1 is arranged along the first direction.In the present embodiment, Connection gasket CPD is arranged at the top surface TSF of micro drives chip DRC, and between registration holes PSW, and " between " comprising can Positioned at two registration holes PSW straight lines it is online upper or be not located at two registration holes PSW straight lines it is online on.In this present embodiment, those are connected Pad CPD be respectively arranged at be closer to the first sides of micro drives chip DRC and the second side edge (such as:Those connection gaskets CPD is not Positioned at two registration holes PSW it is online on), but not limited to this.
In the present embodiment, electronic device 100 further includes complex lead CDT, is connected respectively with being correspondingly connected with pad CPD. In one embodiment, these conducting wires CDT is electrically connected between miniature luminescence unit LMC and connection gasket CPD.
Referring specifically to Fig. 6 B, substantially along the diagrammatic cross-section of the dotted line A-A in Fig. 6 A.In the present embodiment, it is miniature Luminescence unit LMC includes first electrode LPD1, second electrode LPD2 and luminescent layer LML.In the present embodiment, miniature luminous list First LMC can be rectilinear miniature luminescence unit, that is, luminescent layer LML be arranged at first electrode LPD1 and second electrode LPD2 it Between, and first electrode LPD1 and second electrode LPD2 be arranged at luminescent layer LML opposite sides (such as:Upper and lower both sides).At this In embodiment, first electrode LPD1 is electrically connected by conducting wire CDT with corresponding connection gasket CPD, and second electrode LPD2 passes through The conductive layer CDL being arranged in substrate SBT is electrically connected to supply power supply (not illustrating).Wherein, substrate SBT can be composite film It is formed, for example substrate SBT includes heap stack dielectric layer S2 on substrate S1 and viscous layer S3, and insulating layer S2 is arranged at substrate S1 Between viscous layer S3, miniature luminescence unit LMC and micro drives chip DRC is attached to by viscous layer S3 on substrate SBT.Base Bottom material S1 may be selected from the material described in aforesaid base plate SBT, and the material of substrate S1 and substrate SBT can be substantially the same or not Together.Insulating layer S2 can be single-layer or multi-layer, and its material may be selected from the material described in bump PL, and insulating layer S2 and bump PL it Material can be substantially the same or different.Viscous layer S3 can be single-layer or multi-layer, and its material may be selected from the material described in insulating layer S2 Material, and viscous layer S3 can be substantially the same or different from the material of insulating layer S2.
Referring specifically to Fig. 6 C, in one embodiment, in the first direction dl, the width WP of connection gasket CPD may be configured as not Width (width W12 in such as Fig. 3 B) less than bump PL.Whereby, even if bump PL keeps left in registration holes PSW or by right avertence, connects Connection pad CPD is not easy to stagger with conducting wire CDT.In one embodiment, the width WP of connection gasket CPD in the first direction dl for example may be used Substantially 4 microns, but not limited to this.
In one embodiment, in the first direction dl, the width L of conducting wire CDT, registration holes PSW maximum width W (such as It is the width W32 of the width W12 of foregoing registration holes PSW, the width W22 of registration holes PSW or registration holes PSW) and by registration holes The maximum width P for the bump PL that PSW is accommodated (is, for example, width W12, the width W22 or bump of bump PL of foregoing bump PL The width W32 of PL) there is following relationship:L≥[P+((W-P)/2)].For example, ought in the first direction dl, registration holes PSW most Big width W is about 10 microns, and when the maximum width P of the bump PL accommodated by registration holes PSW is about 4 microns, conducting wire CDT it Width L may be configured as greater than or equal to about 10 microns, but not limited to this.Whereby, even if bump PL keep left in registration holes PSW or By right avertence, connection gasket CPD is not easy to stagger with conducting wire CDT.
For example, with reference to Fig. 6 D, in this operation example, the micro drives chip DRC offsets that keep left (are seen thin in figure Arrow and dotted line), and bump PL is made to lean on right avertence in registration holes PSW.Though at this point, the connection gasket CPD of micro drives chip DRC to Left avertence is moved, so still complete connecting wire CDT.
With reference to Fig. 7 A-7B, in another embodiment of the application, the connection gasket CPD of micro drives chip DRC is arranged at miniature The bottom surface BSF of driving chip DRC.This embodiment and the embodiment in 6A-6C it is substantially the same or it is similar see before It states, therefore this will not be repeated here for the part repeated.
In this embodiment, the connection gasket CPD for being arranged at the bottom surface BSF of micro drives chip DRC can be by having set The conductive layer CDL being placed in substrate SBT is electrically connected to the second electrode LPD2 of miniature luminescence unit LMC, and miniature luminescence unit The first electrode LPD1 of LMC can be electrically connected to supply power supply (not illustrating) by conducting wire CDT.
With reference to Fig. 8 A-8B, in another embodiment of the application, miniature luminescence unit LMC can be the miniature luminous list of horizontal Member, that is, first electrode LPD1 and second electrode LPD2 be arranged at luminescent layer LML the same side (such as:First electrode LPD1 with Second electrode LPD2 is arranged at the top surface of luminescent layer LML).This embodiment and the embodiment in 6A-6C are substantially the same Or it is similar see it is foregoing, therefore repeat part this will not be repeated here.
In this embodiment, connection gasket CPD can be electrically connected to the first electricity of miniature luminescence unit LMC by conducting wire CDT1 Pole LPD1, and the second electrode LPD2 of miniature luminescence unit LMC can be electrically connected to supply power supply (not illustrating) by conducting wire CDT2.
In this embodiment, width setting can be identical to previous embodiment to conducting wire CDT1 in the first direction dl, therefore This is not repeated.However, in different embodiments, width can also be set conducting wire CDT1 according to actual needs in the first direction dl It puts, therefore the application is not limited thereto.
With reference to Fig. 9 A-9B, in another embodiment of the application, miniature luminescence unit LMC can be the miniature luminous list of horizontal Member, that is, first electrode LPD1 and second electrode LPD2 be arranged at luminescent layer LML the same side (such as:First electrode LPD1 with Second electrode LPD2 is arranged at the top surface of luminescent layer LML).In addition, in this embodiment, the company of micro drives chip DRC Connection pad CPD is arranged at the bottom surface BSF of micro drives chip DRC.This embodiment and the substantial phase of embodiment in 6A-6C With or it is similar see it is foregoing, therefore repeat part this will not be repeated here.
In this embodiment, the connection gasket CPD for being arranged at the bottom surface BSF of micro drives chip DRC can be by least The conductive layer CDL that part has been arranged in substrate SBT is electrically connected to the first electrode LPD1 of miniature luminescence unit LMC, and miniature The second electrode LPD2 of luminescence unit LMC can be electrically connected to supply power supply (not illustrating) by conducting wire CDT.
In an embodiment of the utility model, at least one of foregoing bump PL may also comprise miniature light-emitting component, such as Can be micro-led (Micro LED).The full-size of miniature light-emitting component is substantially less than 300 microns, and more than 0 Micron, and the full-size of usually miniature light-emitting component can be substantially less than the full-size of micro drives chip DRC.It is real one It applying in example, foregoing bump PL is the structure of miniature light-emitting component in itself, that is, electronic device 100 can utilize miniature luminous member Positions of the structure limitation micro drives chip DRC of part on bearing substrate SBT.
With reference to Figure 10, in one embodiment, the connection gasket CPD of micro drives chip DRC is arranged at micro drives chip DRC Top surface TSF on, and be respectively adjacent to registration holes PSW setting.
It should be noted that include the shape of at least one miniature light-emitting component, bump PL and registration holes PSW in such bump PL And size can be adjusted corresponding to miniature light-emitting component, and seen for the relevant description of bump PL and registration holes PSW Previous embodiment, and the application is not limited with the shape in above-described embodiment and size.Compared to Fig. 6 A the embodiment described, The present embodiment is due to being not required to additionally to set conductor wire and with connection gasket CPD by micro drives chip DRC and miniature light-emitting component electricity Connection, thus the surface area of micro drives chip DRC and miniature light-emitting component because of bearing substrate SBT occupied by being electrically connected is reduced, Help to promote electronic device 100 and be accommodated under the surface area of same bearer substrate SBT compared with the more miniature light-emitting components of Fig. 6 A. When electronic device 100 is display device, the resolution ratio of display device can be more promoted again.
With further reference to Figure 11 A, Figure 11 B, Figure 11 C, after micro drives chip DRC is transposed on bearing substrate SBT, connect Continuous abovementioned steps ST4 in step ST5, can further set light shield layer BMX in at least a part of of micro drives chip DRC On.In one embodiment, light shield layer BMX at least can partly fill the gap between bump PL and registration holes PSW side walls.
In step ST6, some of light shield layer BMX is removed, it is miniature to be exposed from the notch EXP of light shield layer BMX At least a part of and some (such as connection gasket CPD) of micro drives chip DRC or light shield layer BMX of light-emitting component Notch EXP and miniature light-emitting component at least a part of and micro drives chip DRC some (such as connection gasket CPD) It overlaps.In one embodiment, such as useful etch or visualization way remove some of light shield layer BMX, but not limited to this.
In step ST7, set the miniature light-emitting components that are exposed in the notch EXP from light shield layer BMX of conducting wire CDT and On micro drives chip DRC, to be electrically connected miniature light-emitting component and micro drives chip DRC.
By above-mentioned operation, light shield layer BMX can be covered outside micro drives chip DRC, to reduce micro drives chip The light that miniature light-emitting component generates is reflected on the surface of DRC, and causes electronic device light leak.
With reference to Figure 12 A and Figure 12 B.In the present embodiment, complex lead CDT is electrically connected micro drives chip DRC's Miniature light-emitting component in connection gasket CPD and bump PL.In one embodiment, these conducting wires CDT is at least partly arranged at shading On layer BMX.In one embodiment, light shield layer BMX at least can partly fill the gap between bump PL and registration holes PSW side walls.It borrows This, can reduce registration holes PSW side walls and reflect the light that miniature light-emitting component generates, to avoid electronic device light leak.
Referring specifically to Figure 12 B, substantially along the diagrammatic cross-section of the dotted line A-A in Figure 12 A.In the present embodiment, dash forward Miniature light-emitting component in point PL can be approximately identical to foregoing miniature luminescence unit LMC, and possessing has first electrode LPD1, second Electrode LPD2 and luminescent layer LML.In the present embodiment, the miniature light-emitting component in bump PL can be rectilinear miniature luminous list Member, that is, luminescent layer LML is arranged between first electrode LPD1 and second electrode LPD2, and first electrode LPD1 and second electrode LPD2 be arranged at luminescent layer LML opposite sides (such as:First electrode LPD1 and second electrode LPD2 is arranged at luminescent layer LML Two side up and down).In the present embodiment, first electrode LPD1 is electrically connected connection gasket CPD by conducting wire CDT, and second electrode is led to Supply power supply (not illustrating) is electrically connected to after the conductive layer CDL being arranged in substrate SBT.
With reference to Figure 13 A and Figure 13 B, in another embodiment of the application, include the feelings of miniature light-emitting component in bump PL Under condition, the connection gasket CPD of micro drives chip DRC also may be disposed at micro drives chip DRC bottom surfaces (such as micro drives core Piece DRC is compared to top surface adjacent to the surface of loading end CSF).This embodiment and the substantial phase of embodiment in 11A-11B With or it is similar see it is foregoing, therefore repeat part this will not be repeated here.
In this embodiment, connection gasket CPD can be electrically connected to micro- by the conductive layer CDL being arranged in substrate SBT The second electrode LPD2 of type luminescence unit LMC, and the first electrode LPD1 of miniature luminescence unit LMC can be electrically connected by conducting wire CDT It is connected to supply power supply (not illustrating).
In this embodiment, micro drives chip DRC can be completely covered in light shield layer BMX, and conducting wire is allowed without exposing CDT is able to the perforate contacted.
In the foregoing implementation of the utility model, micro drives chip DRC can include operating circuit (working Circuitry), such as:At least one transistor being connected with respective lines and/or other suitable elements (such as:Capacitance is prevented Protection element).Micro drives chip DRC can be electrically connected at scan drive circuit (scan driver circuit) and data are driven Dynamic circuit (data driver circuit).In part embodiment, micro drives chip DRC can also include turntable driving electricity Road (scan driver circuit) at least some and/or data drive circuit (data driver circuit) at least one Partly.
Certainly, the utility model can also have other various embodiments, without departing substantially from the utility model spirit and its essence In the case of, those skilled in the art can make various corresponding changes and deformation, but these phases according to the utility model The change and deformation answered should all belong to the protection domain of the utility model claims.

Claims (11)

1. a kind of electronic device, which is characterized in that include:
One bearing substrate has a loading end;
Multiple bump groups, are arranged on the loading end, and multiple bumps are included in each bump group;And
Multiple micro drives chips correspond to the plurality of bump group respectively;
Wherein, there are each micro drives chip multiple registration holes to accommodate those bumps in the corresponding bump group respectively.
2. electronic device according to claim 1, which is characterized in that multiple miniature luminescence unit groups are further included, point Those micro drives chips are not corresponded to, wherein, it is electric respectively comprising multiple miniature luminescence units in each miniature luminescence unit group It is connected to the corresponding micro drives chip.
3. electronic device according to claim 1, which is characterized in that each micro drives chip has multiple connections Pad is arranged along a first direction, and in the first direction, respectively the width of the connection gasket is not less than the width of the bump.
4. electronic device according to claim 3, which is characterized in that further include complex lead and be connected respectively this A little connection gaskets, wherein, in the first direction, the width L of the conducting wire, the maximum width W of the registration holes and the registration holes are held The maximum width P for the bump received has following relationship:
L≥[P+((W-P)/2)]。
5. electronic device according to claim 4, which is characterized in that the width L of the conducting wire is more than the maximum of the registration holes Width W.
6. electronic device according to claim 1, which is characterized in that it is miniature that the wherein at least one of those bumps includes one Light-emitting component.
7. electronic device according to claim 6, which is characterized in that the bearing substrate further includes multiple conducting wires, wherein often The one micro drives chip include a surface, wherein, be provided on the surface multiple connection gaskets respectively be located at those registration holes it Between, each of miniature light-emitting component be respectively provided with a first electrode, a second electrode with one set the first electrode and this Luminescent layer between two electrodes, those conducting wires be electrically connected in those connection gaskets and those first electrodes or the second electrode it Between.
8. electronic device according to claim 7, which is characterized in that the first electrode shines with the second electrode positioned at this Layer the same side.
9. electronic device according to claim 7, which is characterized in that the first electrode shines with the second electrode positioned at this Layer not homonymy.
10. electronic device according to claim 7, which is characterized in that each micro drives chip further includes another table Face, and the surface or another surface one of which are a top surface, the surface or another surface wherein another one are a bottom Surface, and the top surface compared with the bottom surface away from the loading end.
11. the electronic device according to claim 1 or 7, which is characterized in that further include a light shield layer, the light shield layer It is at least a part of to cover each micro drives chip.
CN201721532241.6U 2017-09-12 2017-11-16 Electronic device Active CN207397671U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW106213549 2017-09-12
TW106213549U TWM554170U (en) 2017-09-12 2017-09-12 Electronic device

Publications (1)

Publication Number Publication Date
CN207397671U true CN207397671U (en) 2018-05-22

Family

ID=61729664

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721532241.6U Active CN207397671U (en) 2017-09-12 2017-11-16 Electronic device

Country Status (2)

Country Link
CN (1) CN207397671U (en)
TW (1) TWM554170U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111540764A (en) * 2020-06-02 2020-08-14 上海天马微电子有限公司 Light-emitting device and manufacturing method thereof, backlight module, display panel and display device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667643B (en) 2018-04-18 2019-08-01 英屬開曼群島商錼創科技股份有限公司 Display panel with micro light emitting diode
CN110391261B (en) * 2018-04-18 2022-03-15 英属开曼群岛商镎创科技股份有限公司 Micro light-emitting diode display panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111540764A (en) * 2020-06-02 2020-08-14 上海天马微电子有限公司 Light-emitting device and manufacturing method thereof, backlight module, display panel and display device
US11961949B2 (en) 2020-06-02 2024-04-16 Shanghai Tianma Micro-electronics Co., Ltd. Light emitting device and manufacturing method thereof, backlight module, display panel and display device

Also Published As

Publication number Publication date
TWM554170U (en) 2018-01-11

Similar Documents

Publication Publication Date Title
US10381430B2 (en) Redistribution layer for substrate contacts
TWI621900B (en) Display and method of fabricating the same
US6424400B1 (en) Display panel including a printed circuit board having a larger opening than the outside shape of the driving IC chip
KR101195688B1 (en) Flexible substrate and electric circuit structure
US11296018B2 (en) Display device having connection unit
CN207397671U (en) Electronic device
CN108205214A (en) Show equipment and its manufacturing method
CN111276474B (en) Display panel and display device
KR20210044430A (en) Method for manufacturing display apparatus, interposer substrate and computer program stored in a recording medium
US20200258971A1 (en) Display device
JP5053479B2 (en) Matrix array substrate and manufacturing method thereof
CN100461984C (en) Circuit assembling structure
CN106773415A (en) A kind of array base palte, display panel and display device
CN105470274A (en) Display panel, display panel manufacturing method and display device
CN112436033A (en) Display device and printed circuit board
CN111668257A (en) Display device
CN110265432A (en) Display panel and preparation method thereof, display device
KR20110079980A (en) Electronic paper panel, method of manufacturing the same
KR102420936B1 (en) Double-sided TFT panel and its manufacturing method, display device
KR20210032217A (en) Electrostatic Chuck And Inspection Apparatus Using The Same
JP3719909B2 (en) Parts manufacturing method
JP3564367B2 (en) Spherical semiconductor
TWI823390B (en) Electronic device
US20230197733A1 (en) Electronic device
CN111093335B (en) Electronic equipment, circuit board and preparation method thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant