CN207368899U - Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices - Google Patents
Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices Download PDFInfo
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- CN207368899U CN207368899U CN201721394757.9U CN201721394757U CN207368899U CN 207368899 U CN207368899 U CN 207368899U CN 201721394757 U CN201721394757 U CN 201721394757U CN 207368899 U CN207368899 U CN 207368899U
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Abstract
The utility model provides a kind of full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices, it is characterised in that：Including main circuit and control circuit；The main circuit includes sequentially connected rectification filtering module, high frequency full-bridge inverting module, high frequency voltage changing module and fast recovery rectifier filter module；The rectification filtering module is connected with three-phase alternating current input power, and fast recovery rectifier filter module is connected with load；Wherein, high frequency full-bridge inverting module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures；The high frequency full-bridge inverting module, high frequency voltage changing module, fast recovery rectifier filter module are connected with control circuit respectively, to realize by control circuit control power supply output.The plasma power-efficient is high, has high power density, and reliability is high, and can reduce electromagnetic interference strength can simultaneously realize that relatively high power exports, and have good dynamic response performance, be advantageously implemented the high speed accuracy controlling of plasma load.
Description
Technical field
The utility model patent is related to special power supply technical field, in particular to a kind of full-bridge based on SiC power devices
LLC mode of resonance plasma electrical sources.
Background technology
Plasma electrical source develops towards requirements at the higher level directions such as efficient, high power density (miniaturization), high-frequency and high-voltages, main
To be realized by the high frequency and reduction power consumption of power device.At present, domestic and international high power plasma power supply is because of its work
The features such as high pressure of work, high current, high power, generally using Si base power devices；However, the performance of Si base power devices has connect
The theoretical limit closely determined by its material property, the potentiality for improving frequency and reduction power consumption are extremely limited.
SiC power devices of new generation have significant advantage compared with Si power devices in terms of switch performance, have and prohibit
The advantages that bandwidth is high, thermal conductivity is high, critical breakdown strength, improve overall performance, reduce switching loss, reduce volume and
Improving in power density has good prospect.But application of the SiC power devices on plasma electrical source at present still in
Space state；Therefore, it is necessary to develop a kind of plasma electrical source based on SiC power devices to improve its power-efficient and work(
Rate density.
Utility model content
The purpose of the utility model is to overcome shortcoming and deficiency of the prior art, there is provided one kind is based on SiC power devices
Part, power-efficient are high, have high power density, reliability are high, can reduce electromagnetic interference strength can simultaneously realize that relatively high power is defeated
Go out, there is good dynamic response performance, the full-bridge LLC mode of resonance for being advantageously implemented plasma load high speed accuracy controlling etc.
Gas ions power supply.
In order to achieve the above object, the utility model is achieved by following technical proposals：One kind is based on SiC power devices
The full-bridge LLC mode of resonance plasma electrical sources of part, it is characterised in that：Including main circuit and control circuit；The main circuit includes
Sequentially connected rectification filtering module, high frequency full-bridge inverting module, high frequency voltage changing module and fast recovery rectifier filter module；It is described whole
Stream filter module is connected with three-phase alternating current input power, and fast recovery rectifier filter module is connected with load；Wherein, high frequency full-bridge inverting
Module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures；The high frequency full-bridge inverting module, high frequency voltage changing module,
Fast recovery rectifier filter module is connected with control circuit respectively, to realize by control circuit control power supply output.The utility model etc.
In gas ions power supply, using full-bridge inverting LLC type Zero-voltage soft switch topological structures, there is high power density, and can be in band
High transfer efficiency is obtained under the conditions of load；Resonant commutation frequency is high, can reduce the time constant of main circuit, controlling cycle is more
Short, dynamic property is more preferable, is conducive to easily realize that plasma loads high speed accuracy controlling.
Preferably, the high frequency full-bridge inverting module is using full-bridge inverting LLC type Zero-voltage soft switch topological structures
Refer to：High frequency full-bridge inverting module include SiC power switch pipe Q101, SiC power switch pipe Q102, SiC power switch pipes Q103,
SiC power switch pipes Q104, inductance L102, inductance L103 and capacitance C107；SiC power switch pipe Q101 and SiC power switch
It is parallel to after pipe Q103 series connection on rectification filtering module；After SiC power switch pipe Q102 and SiC power switch pipes Q104 series connection simultaneously
It is linked on rectification filtering module；The junction of SiC power switch pipe Q101 and SiC power switch pipes Q103 and SiC power switch
Pass through sequentially connected inductance L103, capacitance C107 and inductance between the junction of pipe Q102 and SiC power switch pipe Q104
L102 connections；Inductance L103 is in parallel with high frequency voltage changing module；SiC power switch pipes Q101 is also parallel with diode D109 and capacitance
C103；SiC power switch pipes Q102 is also parallel with diode D110 and capacitance C104；SiC power switch pipes Q103 is also parallel with
Diode D111 and capacitance C105；SiC power switch pipes Q104 is also parallel with diode D112 and capacitance C106.The utility model
In, high frequency full-bridge inverting module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures, is adapted to the applied field of High voltage output
Close, efficiency can be improved and realize high frequency small.High-frequency inversion technology, which can strengthen, transmits power and raising energy conversion efficiency；
LLC harmonic technologies can improve power density, and can obtain high transfer efficiency under the conditions of with load；The Zero-voltage soft is opened
Pass pattern is realized in：SiC power switch pipes Q101~Q104 utilizes its diode D109~D112 and electricity in parallel
Hold C103~C106, parallel diode D109~D112 is turned on naturally at the same time when capacitance C103~C106 discharges into zero, SiC
Power switch pipe Q101~Q104 gate-source voltages are clamped to zero, and opening SiC power switch pipes Q101~Q104 at this time can be real
Existing no-voltage is open-minded, can realize the power change of current using Zero-voltage soft switch pattern, reduce power device switching loss, meets efficient
The needs of rate high power density；The voltage that the power switch pipe needs of high frequency full-bridge inverting module are born is relatively low, can avoid power
The damage of switching tube, and 1200V is up to as power switch pipe, pressure voltage using SiC power switch pipes；SiC power switch
Pipe is connected using parallel way, can meet high power requirements.
Preferably, the high frequency voltage changing module includes high frequency transformer T101；The fast recovery rectifier filter module includes whole
Flow diode D113, rectifier diode D114, capacitance C108, capacitance C109 and reactance L104；The primary of high frequency transformer T101
It is connected with high frequency full-bridge inverting module；The secondary output end one of high frequency transformer T101 passes through sequentially connected rectifier diode
D113 and capacitance C108 is connected with the secondary output end two of high frequency transformer T101；The secondary output end three of high frequency transformer T101
It is connected by rectifier diode D114 with the junction of rectifier diode D113 and capacitance C108；Reactance L104 and capacitance C109 strings
It is connected in parallel on after connection on capacitance C108；Capacitance C109 is in parallel with load.Fast recovery rectifier filter module uses full-wave rectification structure, circuit
Simple in structure, current fluctuation amplitude is small；Reactance L104 can realize high performance smothing filtering, be effectively improved current ripples, favorably
In raising welding quality.
Preferably, the rectifier diode D113 and rectifier diode D114 use SiC Schottky diode；Without reversely
Restoring current, pressure voltage are up to 650V, and switching loss can be greatly reduced and improve switching frequency.
Preferably, the control circuit includes resonant mode controller, high-frequency drive module, peak current detection module,
Voltage feedback module, over-pressed detection module, under-voltage detection module and power supply module；The resonant mode controller is driven by high frequency
Dynamic model block is connected with high frequency full-bridge inverting module；High frequency voltage changing module passes through peak current detection module and resonant mode controller
Connection；Fast recovery rectifier filter module is connected by voltage feedback module and over-pressed detection module with resonant mode controller respectively；
Rectification filtering module is connected by under-voltage detection module with resonant mode controller；Power supply module respectively with resonant mode controller
Connected with high-frequency drive module.
Preferably, the high-frequency drive module includes high-frequency amplifier U201, high-frequency amplifier U202, capacitance
C201, voltage clamp circuit one, voltage clamp circuit two, high-frequency pulse transformer T201 and two high-frequency driving signals produce electricity
Road；
The resonant mode controller includes mode of resonance control chip；Mode of resonance control chip includes being used to produce
The interface of PFM1 signals and the interface for producing PFM2 signals；Interface for producing PFM1 signals passes through sequentially connected height
Audio amplifier U201, capacitance C201, the primary input terminal one of voltage clamp circuit one and high-frequency pulse transformer T201 connect
Connect, the interface for producing PFM2 signals passes through sequentially connected high-frequency amplifier U202 and voltage clamp circuit two and high frequency arteries and veins
The primary input terminal two for rushing transformer T201 connects；
The high-frequency pulse transformer T201 carries two secondary, and two high-frequency driving signal generation circuit structures are identical,
And two high-frequency driving signal generation circuits are connected in the secondary of two high-frequency pulse transformer T201 in the opposite direction.
Preferably, the voltage clamp circuit one includes diode D201 and diode D202；Diode D201 and two poles
It is connected after pipe D202 connections with power supply module；The junction of diode D201 and diode D202 respectively with capacitance C201 and
The primary input terminal one of high-frequency pulse transformer T201 connects；
The voltage clamp circuit two includes diode D203 and diode D204；Diode D203 and diode D204 connects
It is connected after connecing with power supply module；The junction of diode D203 and diode D204 respectively with high-frequency amplifier U202 and high frequency arteries and veins
The primary input terminal two for rushing transformer T201 connects.
Preferably, the high-frequency driving signal generation circuit includes resistance R201, resistance R202, resistance R203, resistance
R204, resistance R205, the row of letting out resistance R206, capacitance C202, capacitance C203, diode D205, diode D206, diode
D207, diode D208, zener diode ZD201, zener diode ZD202, zener diode ZD203 and N-type power switch
Pipe Q201；The secondary output end one of high-frequency pulse transformer T201 passes through sequentially connected resistance R202 and diode D205 and height
The secondary output end two of frequency pulse transformer T201 connects；N-type power switch pipe Q201 source electrodes connected with diode D206 after simultaneously
It is associated on resistance R202；Diode D207 connects to form sequential circuit with resistance R203, connects afterwards with zener diode ZD201
After be connected in parallel on N-type power switch pipe Q201 grid source electrodes；After zener diode ZD203 and zener diode ZD202 differential concatenations
It is connected in parallel on the sequential circuit；The concatenation electricity is connected in parallel on after resistance R204, diode D208 and the row of letting out resistance R206 series connection
Lu Shang；Resistance R201 is in parallel with diode D205；Capacitance C202 is in parallel with zener diode ZD201；Resistance R205 and diode
D208 is in parallel；Capacitance C203 is in parallel with the row of letting out resistance R206；The both ends of capacitance C203 are connected with high frequency full-bridge inverting module respectively.
Since the switching frequency of SiC power switch pipes is high, it is therefore desirable to the driving power of bigger, so as to high-frequency drive mould
Block proposes the requirement of higher.The utility model medium-high frequency drive module forms one using two high-frequency amplifiers and recommends knot
Structure, has enough driving powers to meet the high switching frequency of SiC power switch pipes.Utilize the voltage stabilizing in parallel with capacitance C202
Diode ZD201 produces negative pressure to accelerate the shut-off of SiC power switch pipes, is conducive to prevent misleading for SiC power switch pipes；
Capacitance C203 is SiC power switch pipe grid sources connected in parallel capacitances, and inhibitory action is played to driving voltage spike.
Preferably, the mode of resonance control chip refers to the mode of resonance control chip of model NCP1395B.Model
There is reliable and firm mode of resonance for the mode of resonance control chip of NCP1395B, standby energy consumption is extremely low, provides at the same time
All necessary functions, greatly simplifie the design of control circuit；Its key characteristic includes the broadband of 50kHz~1.0MHz
Scope, adjustable dead time (dead time), adjustable soft start, adjustable minimum and maximum frequency, low startup
Electric current, under-voltage detection, adjustable failure timer interval and hop cycle possibility etc.；Its defencive function, such as shut down immediately
Or event based on timer, under-voltage etc., help to establish a safer converter design, without increasing complicated electricity
Road.
Compared with prior art, the utility model has the following advantages that and beneficial effect：
1st, the utility model plasma electrical source has the efficiency and power density of higher：All power of plasma electrical source
Device all using broad stopband SiC power devices, realizes high-frequency soft switch, the volume and weight smaller of complete machine, dynamic loss
Lower, power density and more efficient, energy conversion efficiency may be up to more than 98%；
2nd, the utility model plasma electrical source has more preferable dynamic response performance：Using the electricity of full-bridge inverting LLC types zero
Soft switch topology structure is pressed, resonant commutation frequency reaches 500kHz, and the time constant of main circuit reduces, and controlling cycle is shorter, moves
State property can be more preferable；Reliability is high, is conducive to improve efficiency, and reducing electromagnetic interference strength can simultaneously realize that relatively high power exports；
3rd, the utility model plasma electrical source has more excellent processing performance：Due to the reverse frequency of the utility model
Higher, dynamic response performance are more preferable so that the utility model is more easily implemented plasma load high speed accuracy controlling.
Brief description of the drawings
Fig. 1 is the system architecture diagram of the utility model plasma electrical source；
Fig. 2 is the main circuit schematic diagram of the utility model plasma electrical source；
Fig. 3 is the circuit diagram of the high-frequency drive module of the utility model plasma electrical source；
Fig. 4 is the circuit diagram of the resonant mode controller of the utility model plasma electrical source.
Embodiment
The utility model is described in further detail with embodiment below in conjunction with the accompanying drawings.
Embodiment
As shown in Figures 1 to 4, full-bridge LLC mode of resonance plasma electrical source of the present embodiment based on SiC power devices includes
Main circuit and control circuit；Main circuit includes sequentially connected rectification filtering module, high frequency full-bridge inverting module, high frequency and becomes pressing mold
Block and fast recovery rectifier filter module；Rectification filtering module is connected with three-phase alternating current input power, and fast recovery rectifier filter module is with bearing
Carry connection.
High frequency full-bridge inverting module includes SiC power switch pipe Q101, SiC power switch pipe Q102, SiC power switch pipes
Q103, SiC power switch pipe Q104, inductance L102, inductance L103 and capacitance C107；SiC power switch pipe Q101 and SiC power
It is parallel to after switching tube Q103 series connection on rectification filtering module；SiC power switch pipe Q102 and SiC power switch pipes Q104 connects
After be parallel on rectification filtering module；The junction of SiC power switch pipe Q101 and SiC power switch pipes Q103 and SiC power
Pass through sequentially connected inductance L103, capacitance C107 and electricity between the junction of switching tube Q102 and SiC power switch pipe Q104
Feel L102 connections；Inductance L103 is in parallel with high frequency voltage changing module；SiC power switch pipes Q101 is also parallel with diode D109 and electricity
Hold C103；SiC power switch pipes Q102 is also parallel with diode D110 and capacitance C104；SiC power switch pipes Q103 is also in parallel
There are diode D111 and capacitance C105；SiC power switch pipes Q104 is also parallel with diode D112 and capacitance C106.This practicality is new
In type, high frequency full-bridge inverting module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures, is adapted to the application of High voltage output
Occasion, can improve efficiency and realize high frequency small.High-frequency inversion technology, which can strengthen to transmit power and improve energy conversion, imitates
Rate；LLC harmonic technologies can improve power density, and can obtain high transfer efficiency under the conditions of with load；The no-voltage
What sofe switch pattern was realized in：SiC power switch pipes Q101~Q104 using its diode D109~D112 in parallel with
And capacitance C103~C106, parallel diode D109~D112 is led naturally at the same time when capacitance C103~C106 discharges into zero
Logical, SiC power switch pipe Q101~Q104 gate-source voltages are clamped to zero, open at this time SiC power switch pipes Q101~
Q104 can realize that no-voltage is open-minded；The power change of current can be realized using Zero-voltage soft switch pattern, reduce power device switching loss,
Meet the needs of high efficient high power density；The voltage that the power switch pipe needs of high frequency full-bridge inverting module are born is relatively low, can
The damage of power switch pipe is avoided, and 1200V is up to as power switch pipe, pressure voltage using SiC power switch pipes；SiC
Power switch pipe is connected using parallel way, can meet high power requirements.
High frequency voltage changing module includes high frequency transformer T101；Fast recovery rectifier filter module includes rectifier diode D113, whole
Flow diode D114, capacitance C108, capacitance C109 and reactance L104；The primary parallel of high frequency transformer T101 is in inductance L103
On；The secondary output end one of high frequency transformer T101 is become by sequentially connected rectifier diode D113 and capacitance C108 and high frequency
The secondary output end two of depressor T101 connects；The secondary output end threeway over commutation diode D114 of high frequency transformer T101 with it is whole
Stream diode D113 is connected with the junction of capacitance C108；It is connected in parallel on after reactance L104 and capacitance C109 series connection on capacitance C108；
Capacitance C109 is in parallel with load.Fast recovery rectifier filter module uses full-wave rectification structure, and circuit structure is simple, current fluctuation amplitude
It is small；Reactance L104 can realize high performance smothing filtering, be effectively improved current ripples, be conducive to improve welding quality.
Rectifier diode D113 and rectifier diode D114 uses SiC Schottky diode；It is resistance to without reverse recovery current
Pressure value is up to 650V, and switching loss can be greatly reduced and improve switching frequency.
The operation principle of the utility model plasma electrical source main circuit is：First, the connection of three-phase alternating current input power is whole
Stream filter module makes alternating current smothing filtering be changed into direct current；DC supply input high frequency full-bridge inverting module, is opened via SiC power
Close the full-bridge inverting that pipe Q101, SiC power switch pipe Q102, SiC power switch pipe Q103 and SiC power switch pipe Q104 is formed
Circuit, the PFM signals of two-way complementation control two diagonal power switch pipes while high frequency is opened or turned off, and direct current is turned
It is changed to high frequency sinusoidal alternating current wave；Wherein diode D109, diode D110, diode D111, diode D112 are respectively SiC
The inverse parallel of power switch pipe Q101, SiC power switch pipe Q102, SiC power switch pipe Q103 and SiC power switch pipe Q104
Diode；And capacitance C103, capacitance C104, capacitance C105 and capacitance C106 are respectively SiC power switch pipe Q101, SiC power
The output filter capacitor of switching tube Q102, SiC power switch pipe Q103 and SiC power switch pipe Q104；Then, high_frequency sine wave
Alternating current flows into high frequency voltage changing module and carries out voltage transformation；High voltagehigh frequency sine wave alternating current after voltage transformation enters
Fast recovery rectifier filter module, becomes smooth direct current；Wherein reactance L104 can further reduce ripple current, but because frequency
The raising of rate so that reactance value greatly reduces, so as to reduce the weight and volume of reactance.High frequency full-bridge inverting module is to output
Magnitude of voltage be modulated, by the modulation of frequency so as to regulated output voltage, realize that constant pressure exports.
Control circuit includes resonant mode controller, high-frequency drive module, peak current detection module, Voltage Feedback mould
Block, over-pressed detection module, under-voltage detection module and power supply module；Resonant mode controller is complete by high-frequency drive module and high frequency
Bridge inverter module connects；High frequency voltage changing module is connected by peak current detection module with resonant mode controller；Fast recovery rectifier
Filter module is connected by voltage feedback module and over-pressed detection module with resonant mode controller respectively；Rectification filtering module leads to
Overvoltage/undervoltage detection module is connected with resonant mode controller；Power supply module respectively with resonant mode controller and high-frequency drive module
Connection.
High-frequency drive module includes high-frequency amplifier U201, high-frequency amplifier U202, capacitance C201, voltage clamping electricity
Lu Yi, voltage clamp circuit two, high-frequency pulse transformer T201 and two high-frequency driving signal generation circuits；
Resonant mode controller includes mode of resonance control chip；Mode of resonance control chip includes being used to produce PFM1 letters
Number interface and interface for producing PFM2 signals；Interface for producing PFM1 signals passes through sequentially connected High frequency amplification
Device U201, capacitance C201, voltage clamp circuit one are connected with the primary input terminal one of high-frequency pulse transformer T201, are used for
The interface for producing PFM2 signals passes through sequentially connected high-frequency amplifier U202 and voltage clamp circuit two and high-frequency impulse transformation
The primary input terminal two of device T201 connects；
High-frequency pulse transformer T201 carries two secondary, and two high-frequency driving signal generation circuit structures are identical, and two
A high-frequency driving signal generation circuit is connected in the secondary of two high-frequency pulse transformer T201 in the opposite direction.
Voltage clamp circuit one includes diode D201 and diode D202；After diode D201 is connected with diode D202
It is connected with power supply module；The junction of diode D201 and diode D202 respectively with capacitance C201 and high-frequency impulse transformation
The primary input terminal one of device T201 connects；
Voltage clamp circuit two includes diode D203 and diode D204；After diode D203 is connected with diode D204
It is connected with power supply module；The junction of diode D203 and diode D204 become with high-frequency amplifier U202 and high-frequency impulse respectively
The primary input terminal two of depressor T201 connects.Diode D201 and diode D202 and diode D203 and diode D204 can
With by magnitude of voltage clamper between VCC and ground.
High-frequency driving signal generation circuit include resistance R201, resistance R202, resistance R203, resistance R204, resistance R205,
It is the row of letting out resistance R206, capacitance C202, capacitance C203, diode D205, diode D206, diode D207, diode D208, steady
Press diode ZD201, zener diode ZD202, zener diode ZD203 and N-type power switch pipe Q201；High-frequency impulse transformation
The secondary output end one of device T201 passes through sequentially connected resistance R202's and diode D205 and high-frequency pulse transformer T201
Secondary output end two connects；N-type power switch pipe Q201 source electrodes are connected in parallel on resistance R202 after being connected with diode D206；Two poles
Pipe D207 connects to form sequential circuit with resistance R203, and N-type power switch is connected in parallel on after connecting afterwards with zener diode ZD201
On pipe Q201 grid source electrodes；The sequential circuit is connected in parallel on after zener diode ZD203 and zener diode ZD202 differential concatenations
On；It is connected in parallel on after resistance R204, diode D208 and the row of letting out resistance R206 series connection on the sequential circuit；Resistance R201 and two poles
Pipe D205 is in parallel；Capacitance C202 is in parallel with zener diode ZD201；Resistance R205 is in parallel with diode D208；Capacitance C203 with
The row of letting out resistance R206 is in parallel；
The principle of one of high-frequency driving signal generation circuit is such：When the secondary of high-frequency pulse transformer T201
One inductive output low level of output terminal, during the two inductive output high level of secondary output end of high-frequency pulse transformer T201, high frequency
The secondary output end two of pulse transformer T201 is by being sequentially connected diode D205, resistance R204 and R205 export high level and arrive
Output port G1；The secondary output end one of high-frequency pulse transformer T201 is by being sequentially connected diode D206 and zener diode
201 export low levels to output port S1；The two inductive output high level of secondary output end of high-frequency pulse transformer T201 passes through
Diode D205 and the sequential circuit charge to capacitance C202；
When the one inductive output high level of secondary output end of high-frequency pulse transformer T201, high-frequency pulse transformer T201's
During two inductive output low level of secondary output end, the secondary output end one of high-frequency pulse transformer T201 is by being sequentially connected resistance
R202 and resistance R201 is connected with the secondary output end two of high-frequency pulse transformer T201；The high level by resistance R202 and
Resistance R201 partial pressures, resistance R202 and resistance R201 junctions export low level to output by resistance R204 and diode D208
Port G1；N-type power switch pipe Q201 is turned at this time, and capacitance C202 starts to discharge, resistance R202 and resistance R201 junctions warp
Cross N-type power switch pipe Q201 and capacitance C202 and export high level to output port S1；
Another high-frequency driving signal generation circuit also makes output port G using identical operation principle2S2Produce high-frequency drive
Signal；The output terminal G of two high-frequency driving signal generation circuits1S1And G2S2It is connected with high frequency full-bridge inverting module.
Since the switching frequency of SiC power switch pipes is high, it is therefore desirable to the driving power of bigger, so as to high-frequency drive mould
Block proposes the requirement of higher.The utility model medium-high frequency drive module forms one using two high-frequency amplifiers and recommends knot
Structure, has enough driving powers to meet the high switching frequency of SiC power switch pipes.Utilize the voltage stabilizing in parallel with capacitance C202
Diode ZD201 produces negative pressure to accelerate the shut-off of SiC power switch pipes, is conducive to prevent misleading for SiC power switch pipes；
Capacitance C203 is SiC power switch pipe grid sources connected in parallel capacitances, and inhibitory action is played to driving voltage spike.
Mode of resonance control chip can use digital microprocessor chip, dedicated mode of resonance can also be used to control
Chip；A kind of preferable mode of resonance control chip therein refers to the mode of resonance control chip of model NCP1395B.Type
Number there is reliable and firm mode of resonance for the mode of resonance control chip of NCP1395B, standby energy consumption is extremely low, provides at the same time
All necessary functions, greatly simplifie the design of control circuit；Its key characteristic includes the wideband of 50kHz~1.0MHz
Rate scope, adjustable dead time (deadtime), adjustable soft start, adjustable minimum and maximum frequency, low open
Streaming current, under-voltage detection, adjustable failure timer interval and hop cycle possibility etc.；Its defencive function, such as close immediately
Machine or event based on timer, under-voltage etc., help to establish a safer converter design, without increasing complicated electricity
Road.It is quite important due to avoiding resonance spikes in resonant circuit structure, in order to make topology be operated in suitable workspace
Domain, the built-in adjustable and accurate lowermost switch frequency of the mode of resonance control chip of model NCP1395B.
The mode of resonance control chip of model NCP1395B is so set：
Pin FminWith pin FmaxRespectively minimum and maximum operating frequency setting end, by non-essential resistance R301 and
The selection of R302, can set minimum and highest frequency value, and resistance value claims non-linear relation with frequency；
Pin DT sets end for dead time, determines dead time according to non-essential resistance R303, prevents high frequency full-bridge inverting
The diagonal bridge arm of module leads directly to and breaks down；
Pin CssFor soft start end, wherein C301 is external capacitive, and normal soft start operating voltage point is in 3.5V, if feeding back
Voltage VfbLess than 0.6V, then soft start is ceaselessly starting；
Pin FB is voltage stabilizing feedback end, and wherein C302 is external capacitive, and R312 and R313 are divider resistance, and D302 is voltage stabilizing
Diode, the output voltage values of fast recovery rectifier filter module export optocoupler by voltage feedback module in voltage feedback module
Two output ports are connected with input port RT with RT-RTN respectively, by controlling the turning on and off come control signal of optocoupler
The closure of mouth RT and RT-RTN and disconnection, when input port RT and RT-RTN are closed by optocoupler, power supply passes through resistance R312
Partial pressure is carried out with resistance R313, obtains feedback voltage, when feedback voltage level is in 0~0.6V, resonant mode controller is determined as
Failure；For feedback voltage level in 0.6V~1.3V, the frequency of output waveform is fixed on minimum value Fmin；Feedback voltage level is in 1.3V
During~6V, the variation delta F of frequencyswWith feedback voltage Δ VfbProportional relation；When feedback voltage is more than 6V, mode of resonance control
Device processed is stopped.By varying frequency so as to stablize the output voltage values of fast recovery rectifier filter module；
Pin CtimerFailure detection time sets end, and event is set by the discharge and recharge of non-essential resistance R304 and capacitance C303
Hinder detection time；
Pin BO is under-voltage protection test side, and C304 is external capacitive, and R305 is divider resistance, three-phase alternating current input power
After rectification filtering module rectifying and wave-filtering, detection magnitude of voltage Brown-Down Voltage are obtained through overvoltage/undervoltage detection module,
Input pin BO, if magnitude of voltage exceeds 1.03V~4.1V scopes, resonant mode controller is stopped；Fast recovery rectifier is filtered
The output voltage values of ripple module obtain detection magnitude of voltage OVP-SIG by over-pressed detection module, when detecting over-pressed signal, open
Logical PNP type triode N301, R316 are current-limiting resistance, and voltage VCC obtains resistance R315 after divider resistance R314 and R315
On magnitude of voltage pass through diode D301 input pin BO, if magnitude of voltage exceeds 1.03V~4.1V scopes, mode of resonance control
Device processed is stopped；
Pin A_GND is simulation ground, and pin P_GND is that digitally, two ground are connected on GND；
Pin SW_A and pin SW_B is respectively low side and high-side driver pulse output end, and pin SW_A is to be used to produce
The interface of PFM1 signals, pin SW_B are the interfaces for producing PFM2 signals, the electrical isolation by high-frequency drive module and
Amplification, produces drive signal, to drive four SiC power switch pipes of high frequency full-bridge inverting module, controls it to open or close
It is disconnected, the constant-voltage characteristic closed-loop control of output voltage is realized, to meet the magnitude of voltage requirement of setting；
Pin VCC is power end, and wherein C305 and C308 are external capacitive, and D301 is zener diode；
Pin F-Fault and pin S-Fault is respectively quick and fault detect pin at a slow speed, by feedback voltage VfbPass through
Resistance R309 and resistance R308 are connected on pin F-Fault and pin S-Fault respectively.Pin 13F-Fault failure cut-in voltages
For 1.05V, it is 1.03V that failure, which closes recovery voltage, according to feedback voltage level VfbControl resonant mode controller unlatching or
Shut-off, wherein C306 is external capacitive, and R307 is non-essential resistance.Pin S-Fault failures cut-in voltage is 1.03V, and peak value is electric
Flow detection module and obtain high frequency voltage changing module primary current value using current sensor, primary current value is flowed by input port CS
Enter resonant mode controller, wherein R306, R310 and R311 is shunt resistance, and C307 is shunt capacitance；When an error occurs, it is fixed
When device start countdown, and resonant mode controller is turned off at the end of the time.
Voltage feedback module is used for the output voltage values for detecting fast recovery rectifier filter module, can use the prior art.
Under-voltage detection module is used for the input voltage value for detecting rectification filtering module, can use the prior art.
Peak current detection module is used to obtain high frequency voltage changing module primary current value, can use the prior art.
Over-pressed detection module is used for the output voltage values for detecting fast recovery rectifier filter module, can use the prior art.
The utility model plasma electrical source realizes high-frequency and high-voltage output, disclosure satisfy that efficiently, high power density and small
The requirement of type, is plasma electrical source of new generation；Its specific advantage is as follows：
1st, high frequency, miniaturization：The utility model novelty employs full SiC power devices, constructs based on full SiC
The full-bridge LLC mode of resonance plasma electrical sources of power device, realize high frequency, be dramatically reduced high frequency voltage changing module,
The volume and weight of cooling system and fast recovery rectifier filter module, dynamic response is good, greatly reduces dynamic loss, improves
Overall performance；
2nd, it is efficient：The utility model makes full use of the powerful design of the mode of resonance control chip of model NCP1395B
Flexibility, external circuit is simple, solid and reliable, it is easy to accomplish the accurate control of plasma electrical source；Changed using LLC type Sofe Switch
Flow Technique, the energy conversion efficiency of high frequency full-bridge inverting module is high, and power density is high, good reliability, not only contributes to improve effect
Rate, and electromagnetic interference strength can be reduced, realize that relatively high power exports.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model and from above-mentioned
The limitation of embodiment, the change made under other any Spirit Essences and principle without departing from the utility model, modify, replace
Generation, combination, simplify, and should be equivalent substitute mode, is included within the scope of protection of the utility model.
Claims (9)
- A kind of 1. full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices, it is characterised in that：Including main circuit and Control circuit；The main circuit include sequentially connected rectification filtering module, high frequency full-bridge inverting module, high frequency voltage changing module and Fast recovery rectifier filter module；The rectification filtering module is connected with three-phase alternating current input power, and fast recovery rectifier filter module is with bearing Carry connection；Wherein, high frequency full-bridge inverting module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures；The high frequency is complete Bridge inverter module, high frequency voltage changing module, fast recovery rectifier filter module are connected with control circuit respectively, to realize by control circuit control Power supply output processed.
- 2. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The high frequency full-bridge inverting module is referred to using full-bridge inverting LLC type Zero-voltage soft switch topological structures：High frequency full-bridge is inverse Becoming module includes SiC power switch pipe Q101, SiC power switch pipe Q102, SiC power switch pipe Q103, SiC power switch pipes Q104, inductance L102, inductance L103 and capacitance C107；After SiC power switch pipe Q101 and SiC power switch pipes Q103 series connection simultaneously It is linked on rectification filtering module；Rectifying and wave-filtering mould is parallel to after SiC power switch pipe Q102 and SiC power switch pipes Q104 series connection On block；The junction of SiC power switch pipe Q101 and SiC power switch pipes Q103 and SiC power switch pipe Q102 and SiC power Connected between the junction of switching tube Q104 by sequentially connected inductance L103, capacitance C107 with inductance L102；Inductance L103 It is in parallel with high frequency voltage changing module；SiC power switch pipes Q101 is also parallel with diode D109 and capacitance C103；SiC power switch Pipe Q102 is also parallel with diode D110 and capacitance C104；SiC power switch pipes Q103 is also parallel with diode D111 and capacitance C105；SiC power switch pipes Q104 is also parallel with diode D112 and capacitance C106.
- 3. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The high frequency voltage changing module includes high frequency transformer T101；The fast recovery rectifier filter module include rectifier diode D113, Rectifier diode D114, capacitance C108, capacitance C109 and reactance L104；Primary and the high frequency full-bridge inverting of high frequency transformer T101 Module connects；The secondary output end one of high frequency transformer T101 by sequentially connected rectifier diode D113 and capacitance C108 with The secondary output end two of high frequency transformer T101 connects；The secondary output end threeway over commutation diode of high frequency transformer T101 D114 is connected with the junction of rectifier diode D113 and capacitance C108；Capacitance is connected in parallel on after reactance L104 and capacitance C109 series connection On C108；Capacitance C109 is in parallel with load.
- 4. the full-bridge LLC mode of resonance plasma electrical sources according to claim 3 based on SiC power devices, its feature exist In：The rectifier diode D113 and rectifier diode D114 use SiC Schottky diode.
- 5. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The control circuit include resonant mode controller, high-frequency drive module, peak current detection module, voltage feedback module, Over-pressed detection module, under-voltage detection module and power supply module；The resonant mode controller passes through high-frequency drive module and high frequency Full-bridge inverting module connects；High frequency voltage changing module is connected by peak current detection module with resonant mode controller；It is quick whole Stream filter module is connected by voltage feedback module and over-pressed detection module with resonant mode controller respectively；Rectification filtering module It is connected by under-voltage detection module with resonant mode controller；Power supply module respectively with resonant mode controller and high-frequency drive mould Block connects.
- 6. the full-bridge LLC mode of resonance plasma electrical sources according to claim 5 based on SiC power devices, its feature exist In：The high-frequency drive module includes high-frequency amplifier U201, high-frequency amplifier U202, capacitance C201, voltage clamping electricity Lu Yi, voltage clamp circuit two, high-frequency pulse transformer T201 and two high-frequency driving signal generation circuits；The resonant mode controller includes mode of resonance control chip；Mode of resonance control chip includes being used to produce PFM1 letters Number interface and interface for producing PFM2 signals；Interface for producing PFM1 signals passes through sequentially connected High frequency amplification Device U201, capacitance C201, voltage clamp circuit one are connected with the primary input terminal one of high-frequency pulse transformer T201, are used for The interface for producing PFM2 signals passes through sequentially connected high-frequency amplifier U202 and voltage clamp circuit two and high-frequency impulse transformation The primary input terminal two of device T201 connects；The high-frequency pulse transformer T201 carries two secondary, and two high-frequency driving signal generation circuit structures are identical, and two A high-frequency driving signal generation circuit is connected in the secondary of two high-frequency pulse transformer T201 in the opposite direction.
- 7. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The voltage clamp circuit one includes diode D201 and diode D202；After diode D201 is connected with diode D202 It is connected with power supply module；The junction of diode D201 and diode D202 respectively with capacitance C201 and high-frequency impulse transformation The primary input terminal one of device T201 connects；The voltage clamp circuit two includes diode D203 and diode D204；After diode D203 is connected with diode D204 It is connected with power supply module；The junction of diode D203 and diode D204 become with high-frequency amplifier U202 and high-frequency impulse respectively The primary input terminal two of depressor T201 connects.
- 8. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The high-frequency driving signal generation circuit include resistance R201, resistance R202, resistance R203, resistance R204, resistance R205, It is the row of letting out resistance R206, capacitance C202, capacitance C203, diode D205, diode D206, diode D207, diode D208, steady Press diode ZD201, zener diode ZD202, zener diode ZD203 and N-type power switch pipe Q201；High-frequency impulse transformation The secondary output end one of device T201 passes through sequentially connected resistance R202's and diode D205 and high-frequency pulse transformer T201 Secondary output end two connects；N-type power switch pipe Q201 source electrodes are connected in parallel on resistance R202 after being connected with diode D206；Two poles Pipe D207 connects to form sequential circuit with resistance R203, and N-type power switch is connected in parallel on after connecting afterwards with zener diode ZD201 On pipe Q201 grid source electrodes；The sequential circuit is connected in parallel on after zener diode ZD203 and zener diode ZD202 differential concatenations On；It is connected in parallel on after resistance R204, diode D208 and the row of letting out resistance R206 series connection on the sequential circuit；Resistance R201 and two poles Pipe D205 is in parallel；Capacitance C202 is in parallel with zener diode ZD201；Resistance R205 is in parallel with diode D208；Capacitance C203 with The row of letting out resistance R206 is in parallel；The both ends of capacitance C203 are connected with high frequency full-bridge inverting module respectively.
- 9. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The mode of resonance control chip refers to the mode of resonance control chip of model NCP1395B.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107707136A (en) * | 2017-10-26 | 2018-02-16 | 华南理工大学 | Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices |
| CN113394997A (en) * | 2021-08-16 | 2021-09-14 | 南京威登等离子科技设备有限公司 | Digital constant-power high-voltage plasma power supply |
-
2017
- 2017-10-26 CN CN201721394757.9U patent/CN207368899U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107707136A (en) * | 2017-10-26 | 2018-02-16 | 华南理工大学 | Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices |
| WO2019080400A1 (en) * | 2017-10-26 | 2019-05-02 | 华南理工大学 | Sic power device-based full-bridge llc resonant plasma power supply |
| CN113394997A (en) * | 2021-08-16 | 2021-09-14 | 南京威登等离子科技设备有限公司 | Digital constant-power high-voltage plasma power supply |
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