CN207339632U - A kind of high location switch drive circuit - Google Patents
A kind of high location switch drive circuit Download PDFInfo
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- CN207339632U CN207339632U CN201720829682.6U CN201720829682U CN207339632U CN 207339632 U CN207339632 U CN 207339632U CN 201720829682 U CN201720829682 U CN 201720829682U CN 207339632 U CN207339632 U CN 207339632U
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- location switch
- high location
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- combinational circuit
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Abstract
A kind of high location switch drive circuit, the turn-on and turn-off of the high location switch HS carry out automatically, principle is the operating current using coil N1 and clamping capacitance Cc, appropriate driving voltage is produced according to the characteristic of high-order triode combinational circuit 3 or voltage-stabiliser tube ZD, it is not required to external signal intervention, a high position is completed to drive floatingly, this high location switch drive circuit eliminates the IC and peripheral component for producing PWMH, thus the application range driven floatingly is expanded, and cost is reduced, improve reliability.
Description
Technical field
It the utility model is related to field of power electronics, more particularly to the converter containing high-order floating ground switching device.
Background technology
At present, high-order floating ground switching device must control its turn-on and turn-off using the actuation techniques on floating ground, comprising floating
The IC complex and expensives of ground actuation techniques, and limited using performance during such IC be subject to such IC, high pressure, spy can not be applied to
High frequency occasion, and additional device number is more, is easily disturbed, reliability is difficult to improve, and Fig. 1 is opening for conventional active clamping technique
Close transformer configuration figure, it can be seen that high location switch HS is included in this structure chart, need to be driven floatingly, PWML opens for low level in Fig. 1
The drive signal of LS is closed, PWMH is the drive signal produced by floating ground actuation techniques IC, for driving high location switch HS.
Utility model content
The purpose of this utility model is that by a kind of high location switch drive circuit, carried to solve background section above
To the problem of.
For this purpose, the utility model uses following technical scheme.
A kind of high location switch drive circuit, including low-side switch LS, winding N1, high location switch combinational circuit 2 and a high position three
Pole pipe combinational circuit 3, clamping capacitance Cc, its connection mode are：The drain electrode connection clamp electricity of the high location switch combinational circuit 2
Hold Cc, the Same Name of Ends of the grid connection winding N1 of high location switch combinational circuit 2, the source electrode connection height of high location switch combinational circuit 2
The collector of position triode combinational circuit 3, the emitter connection winding N1's of the high-order triode combinational circuit 3 is of the same name
End, the drain electrode of the Same Name of Ends connection low-side switch LS of winding N1, the other end connection clamping capacitance Cc of winding N1；The high position
Switch combination circuit 2 includes high location switch HS, grid source voltage-stabiliser tube ZD, gate-source capacitance Cg, grid source resistance Rg, its connection mode is：
The cathode and anode of the grid source voltage-stabiliser tube ZD is connected in parallel on the grid and source electrode of the high location switch HS, the grid respectively
Source capacitance Cg is connected in parallel on the grid and source electrode of the high location switch HS, and the grid source resistance Rg is connected in parallel on the high position and opens
The grid and source electrode of HS is closed, the high location switch combinational circuit 2, it acts as keeping and limit driving voltage, makes a high position open
Close HS and be operated in safe range；
The high-order triode combinational circuit 3 includes high position triode HN and base impedance Zb, its connection mode is：Institute
The base impedance Zb stated is connected in parallel on the base stage and emitter of the high-order triode HN, the high-order triode combinational circuit
3, it acts as：Using the reverse breakdown characteristics of high-order triode HN, the freewheel current of winding N1 is set to produce the positive drive being adapted to
Dynamic voltage, using the recovery characteristics at a slow speed of triode, makes the discharge current of clamping capacitance Cc be delayed and produces higher negative sense driving
Voltage.
The cathode and anode of the grid source voltage-stabiliser tube ZD are connected in parallel on the grid and source electrode of high location switch HS respectively, it is acted on
Be the grid voltage for protecting high location switch HS in safe range, it is while special using the reverse breakdown of the grid source voltage-stabiliser tube ZD
Property, the freewheel current of winding N1 is produced suitable positive drive voltage, utilize the forward conduction of the grid source voltage-stabiliser tube ZD
Characteristic, makes the discharge current of clamping capacitance Cc produce less negative drive voltage；This device either voltage-stabiliser tube, or wink
State suppresses diode, or varistor.
The gate-source capacitance Cg is connected in parallel on the grid and source electrode of high location switch HS, and it is storage electric charge that it, which is acted on, for prolonging
When drive high location switch HS turn-on and turn-off, the principle of delay is that capacitance both end voltage cannot be mutated, in the storage of neutralizing capacitance
During electric charge, the voltage at capacitance both ends gradually changes, this process gradually changed is delay process.
The base impedance Zb is connected in parallel on the base stage and emitter of high-order triode HN, base impedance Zb either electricity
Resistance, or inductance, or capacitance.
The high location switch HS and low-side switch LS either switch mosfet devices, or triode, either
IGBT, or GaN switching devices, or SiC switching devices.
A kind of high location switch drive circuit disclosed in the utility model, the turn-on and turn-off of the high location switch HS are certainly
Dynamic progress, principle is the operating current using coil N1 and clamping capacitance Cc, according to high-order triode combinational circuit 3 or voltage stabilizing
The characteristic of pipe ZD and produce appropriate driving voltage, be not required to external signal intervention, that is, complete a high position drives floatingly, the utility model
A kind of disclosed high location switch drive circuit eliminates the IC and peripheral component for producing PWMH, thus expands and drives floatingly
Dynamic application range, and cost is reduced, improve reliability.
Brief description of the drawings
Fig. 1 conventional active clamp circuit structure charts.
The circuit structure diagram of Fig. 2 first embodiments provided by the utility model.
The circuit structure diagram of Fig. 3 second embodiments provided by the utility model.
The circuit structure diagram of Fig. 4 3rd embodiments provided by the utility model.
The circuit structure diagram of Fig. 5 fourth embodiments provided by the utility model.
The circuit structure diagram of Fig. 6 the 5th embodiments provided by the utility model.
The circuit structure diagram of Fig. 7 sixth embodiments provided by the utility model.
Label declaration：1：Winding N1, the one end for having round dot are Same Name of Ends；2：High location switch combinational circuit；3：High-order three poles
Pipe combinational circuit；Vin：Input power；PWML：Drive the voltage signal of low-side switch LS；PWMH：Drive the electricity of high location switch HS
Press signal；HS：High location switch；LS：Low-side switch；Cc：Clamping capacitance；ZD：Voltage-stabiliser tube； TVS：Transient Suppression Diode；HN：
NPN type high position triode；HP：Positive-negative-positive high position triode；L1：The magnetizing inductance of winding N1；Lr：Leakage inductance；N2：With winding N1 couplings
The coil of conjunction.
Embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples.It is it is understood that described herein
Specific embodiment be used only for explaining the utility model, rather than the restriction to the utility model.It also should be noted that
For the ease of description, part relevant with the utility model rather than full content are illustrate only in attached drawing, unless otherwise defined, this
All technical and scientific terms used in text and the those skilled in the art for belonging to the utility model are normally understood
Implication is identical.Term used herein is intended merely to the purpose of description specific embodiment, it is not intended that in limiting this reality
With new.
The first embodiment circuit structure diagram provided by the utility model shown in Fig. 2 is refer to, analysis high location switch HS is led
Logical and turn off process：When low-side switch LS is turned off, the freewheel current of leakage inductance Lr and winding N1 pass through high-order triode combinational circuit
3, a breakdown reverse voltage is produced using the reverse breakdown characteristics of high-order triode HN, this polarity of voltage is to launch extremely just,
Current collection is extremely negative, this polarity is positive drive voltage for the grid of high location switch HS, the HS conductings of driving high location switch, by
In the presence of gate-source capacitance Cg, it can be delayed and generation and terminate the positive drive voltage, this delay makes high location switch HS zero
Voltage status turns on；With the release of leakage inductance Lr and winding N1 energy, the both end voltage of winding N1 declines, and clamping capacitance Cc is opened
Beginning releases energy winding N1, due to the recovery characteristics at a slow speed of high-order triode HN, the electricity of the above-mentioned process generation to release energy
Stream flows through high-order triode HN, at the end of the recovery time of high-order triode HN, can produce current collection extremely just, and transmitting is extremely negative
High voltage, this high voltage is negative drive voltage for high location switch HS, makes high location switch HS reliable turn-offs；By
Above-mentioned analysis learns that high-order triode combinational circuit 3 generates positive drive voltage, and is delayed and generates higher negative sense driving
Voltage；Hereafter, low-side switch LS can carry out the turn-on and turn-off process in next cycle.
As the above analysis, the turn-on and turn-off of high location switch HS carry out automatically, principle be using coil N1 and
The operating current of clamping capacitance Cc, appropriate driving voltage is produced according to the characteristic of high-order triode combinational circuit 3, is not required to outer
Portion's signal intervention, with the turn-on and turn-off of high location switch HS, leakage inductance Lr energy is stored in clamping capacitance Cc, and by clamping
Capacitance Cc is released to winding N1 recyclings.
Fig. 3 is second embodiment circuit structure diagram provided by the utility model, and high position triode HP is PNP in this circuit
Type, operation principle is with the first embodiment principle, and details are not described herein.
Fig. 4 is 3rd embodiment circuit structure diagram provided by the utility model, when the first embodiment is applied to electricity
When flowing discontinuous mode and electric current critical conduction mode, it may not be necessary to connect high-order triode combinational circuit 3 in the first embodiment, such as
Shown in Fig. 4, its operation principle is as follows：When low-side switch LS is turned off, the freewheel current of winding N1 and leakage inductance Lr are back through voltage stabilizing
Pipe ZD, and a breakdown voltage is produced, this polarity of voltage is that its cathode is that just, anode is negative, this polarity is for high location switch HS
Grid for be positive drive voltage, driving high location switch conducting, due to the presence of gate-source capacitance Cg, can be delayed generation this just
To driving voltage, this delay makes high location switch HS be turned in zero-voltage state；With the release of Lr and winding N1 energy, winding N1
Both end voltage decline, clamping capacitance Cc releases energy winding N1, and the electric current forward direction that this process to release energy produces passes through
Voltage-stabiliser tube ZD, produces its anode as just, its cathode is negative voltage, this voltage is negative sense driving electricity for high location switch HS
Pressure, high location switch HS shut-offs, due to the presence of gate-source capacitance Cg, can be delayed and produce the negative drive voltage；This was delayed
Journey makes the energy storage exoergic of clamping capacitance Cc more abundant；Hereafter, low-side switch LS can carry out the turn-on and turn-off mistake in next cycle
Journey, is learnt by above-mentioned analysis, and the turn-on and turn-off of high location switch HS carry out automatically, and principle is to utilize coil N1 and clamp electricity
Hold the operating current of Cc, appropriate driving voltage is produced according to the characteristic of voltage-stabiliser tube ZD, is not required to external signal intervention, voltage-stabiliser tube
ZD completes the work for producing positive drive voltage and negative drive voltage, when the operating current of coil N1 and clamping capacitance Cc compared with
Greatly, when causing voltage-stabiliser tube temperature rise higher, the voltage-stabiliser tube ZD is replaced using Transient Suppression Diode.
Fig. 5 is fourth embodiment circuit structure diagram provided by the utility model, when the first embodiment is applied to low
During the small-power switching power-supply of cost, since its cost pressure and switching current are smaller, it is not necessary to use quick high location switch device
Part, then high location switch combinational circuit 2 in the first embodiment described without connection, omits the high location switch combinational circuit 2
Afterwards, the collector of high-order triode is directly connected to clamping capacitance Cc；As shown in figure 5, its principle is：Low-side switch LS is turned off
When, the excessively high-order triode combinational circuit 3 of freewheel current of winding N1 and leakage inductance Lr, its current direction is transmitting best collector,
When the both end voltage of winding N1 reduces, due to the recovery characteristics at a slow speed of triode, high-order triode HN continues to turn on, clamp electricity
Hold Cc by high-order triode HN to winding N1 exoergics, the current direction of exoergic is current collection best emitter, with high-order three poles
Pipe HN recovery times terminate, and high-order triode HN shut-offs, complete the storage of leakage inductance Lr energy and the process of recycling, this practicality
Difference lies in the high location switch HS of the first embodiment can be carried out soon new fourth embodiment with the first embodiment
Speed switch, loss is low, and cost is slightly higher, and the high-order triode HN in the utility model fourth embodiment can only carry out slower speed
Switch, loss is bigger, but cost is low.
Fig. 6 is the 5th embodiment circuit structure diagram provided by the utility model, itself and the utility model first embodiment
Difference is, is in the emitter of high-order triode combinational circuit 3, one Transient Suppression Diode TVS of series connection, connection mode,
The emitter of the high-order triode combinational circuit 3 of anode connection of Transient Suppression Diode TVS, its cathode connection winding N1's is of the same name
End；When the driving voltage that high-order triode combinational circuit 3 produces is insufficient, this Transient Suppression Diode TVS need to be connected to produce
Higher driving voltage；When switching current is larger, Transient Suppression Diode TVS is used herein as, when switching current is smaller, this
Place uses zener diode；The operation principle of other parts is identical with the utility model first embodiment, repeats no more.
Fig. 7 is sixth embodiment circuit structure diagram provided by the utility model, itself and the utility model first embodiment
Difference is, in the first embodiment, the cathode of input power Vin is connected to the upper end of clamping capacitance Cc, forms active
Clamp circuit；The cathode of input power Vin is connected to the lower end of clamping capacitance Cc in the present embodiment, forms half-bridge circuit, it is high
The operation principle of bit switch driving process is identical with the utility model first embodiment, repeats no more.
Operation principle in summary understands that a kind of high location switch drive circuit disclosed in the utility model utilizes winding N1
Freewheel current produce positive drive voltage, negative drive voltage is produced using the discharge current of clamping capacitance Cc, using described
The characteristic of component produces appropriate delay, produces the drive signal for being adapted to high location switch HS, and such a mode is not required to external signal
Intervene, relative to a high position floating ground driving chip, expand the application range of high-order driving, reduce cost, add reliability.
It above are only the preferred embodiment and institute's application technology principle of the utility model.It will be appreciated by those skilled in the art that
The utility model is not limited to specific embodiment described here, can carry out various obvious changes for a person skilled in the art
Change, readjust and substitute without departing from the scope of protection of the utility model.Therefore, although by above example to this reality
It is described in further detail with new, but the utility model is not limited only to above example, is not departing from this practicality
In the case of new design, other more equivalent embodiments can also be included, and the scope of the utility model is by appended right
Claimed range determines.
Claims (5)
1. a kind of high location switch drive circuit, including low-side switch LS, winding N1, high location switch combinational circuit (2) and a high position three
Pole pipe combinational circuit (3), clamping capacitance Cc, it is characterized in that：The drain electrode connection clamp electricity of the high location switch combinational circuit (2)
Hold Cc, the Same Name of Ends of the grid connection winding N1 of high location switch combinational circuit (2), the source electrode of high location switch combinational circuit (2) connects
Meet the collector of high-order triode combinational circuit (3), the emitter connection winding N1 of the high-order triode combinational circuit (3)
Same Name of Ends, the drain electrode of the Same Name of Ends connection low-side switch LS of winding N1, the other end connection clamping capacitance Cc of winding N1；
The high location switch combinational circuit (2) includes high location switch HS, grid source voltage-stabiliser tube ZD, gate-source capacitance Cg, grid source resistance
Rg, its connection mode are：The cathode and anode of the grid source voltage-stabiliser tube ZD is connected in parallel on the grid of the high location switch HS respectively
Pole and source electrode, the gate-source capacitance Cg are connected in parallel on the grid and source electrode of the high location switch HS, the grid source resistance Rg
The grid and source electrode of the high location switch HS are connected in parallel on, the high location switch combinational circuit (2), it acts as keep and limit
Driving voltage processed, makes high location switch HS be operated in safe range；
The high-order triode combinational circuit (3) includes high position triode HN and base impedance Zb, its connection mode is：It is described
Base impedance Zb be connected in parallel on the base stage and emitter of the high-order triode HN, the high-order triode combinational circuit
(3), it acts as：Using the reverse breakdown characteristics of high-order triode HN, the freewheel current of winding N1 is set to produce suitable forward direction
Driving voltage, using the recovery characteristics at a slow speed of triode, makes the discharge current of clamping capacitance Cc be delayed and produces higher negative sense drive
Dynamic voltage.
2. a kind of high location switch drive circuit according to claim 1, it is characterized in that, the moon of the grid source voltage-stabiliser tube ZD
Pole and anode are connected in parallel on the grid and source electrode of high location switch HS respectively, it acts on the grid voltage for being to protect high location switch HS and is pacifying
In gamut, while using the reverse breakdown characteristics of the grid source voltage-stabiliser tube ZD, produce the freewheel current of winding N1 and be adapted to
Positive drive voltage, using the forward conduction characteristic of the grid source voltage-stabiliser tube ZD, produce the discharge current of clamping capacitance Cc
Raw less negative drive voltage；This device either voltage-stabiliser tube, or Transient Suppression Diode, or varistor.
3. a kind of high location switch drive circuit according to claim 1, it is characterized in that, the gate-source capacitance Cg is connected in parallel on
The grid and source electrode of high location switch HS, it is storage electric charge that it, which is acted on, for delay and running high location switch HS turn-on and turn-off.
4. a kind of high location switch drive circuit according to claim 1, it is characterized in that, the base impedance Zb is connected in parallel on
The base stage and emitter of high-order triode HN, base impedance Zb either resistance, or inductance, or capacitance.
5. a kind of high location switch drive circuit according to claim 1, it is characterized in that, the high location switch HS and low level
LS either switch mosfet devices, or triode, or IGBT, or GaN switching devices are switched, either
SiC switching devices.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720829682.6U CN207339632U (en) | 2017-07-10 | 2017-07-10 | A kind of high location switch drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720829682.6U CN207339632U (en) | 2017-07-10 | 2017-07-10 | A kind of high location switch drive circuit |
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| CN207339632U true CN207339632U (en) | 2018-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248810A (en) * | 2017-07-10 | 2017-10-13 | 马丽娟 | A kind of high-side switch drive circuit |
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2017
- 2017-07-10 CN CN201720829682.6U patent/CN207339632U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248810A (en) * | 2017-07-10 | 2017-10-13 | 马丽娟 | A kind of high-side switch drive circuit |
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