CN207269268U - A kind of silicon microphone of high SNR - Google Patents
A kind of silicon microphone of high SNR Download PDFInfo
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- CN207269268U CN207269268U CN201721135190.3U CN201721135190U CN207269268U CN 207269268 U CN207269268 U CN 207269268U CN 201721135190 U CN201721135190 U CN 201721135190U CN 207269268 U CN207269268 U CN 207269268U
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Abstract
The utility model discloses a kind of silicon microphone of high SNR, including：PCB, installs the first housing and the second housing on the pcb side by side, and, mount the MEMS chip and IC chip on the pcb and being located in the first shell body；Formed with the first cavity in the first shell body, formed with chip cavity between the MEMS chip and the PCB, formed with the second cavity in the second shell body, second cavity is connected with the chip cavity by the sound passage of leading opened up inside the PCB, and acoustic holes are offered on second housing.The utility model embodiment has the following advantages：1st, sensitivity and the SNR of silicon microphone can be improved, the higher frequency response of silicon microphone can also be improved；2nd, harmful effect of the optical noise to MEMS is avoided；3rd, the environmental suitability of silicon microphone can be improved.
Description
Technical field
It the utility model is related to silicon microphone technical field, and in particular to a kind of silicon microphone of high SNR.
Background technology
Silicon microphone is compact with size, and the characteristic such as strong and reflowable welding of stability, leads in mobile phone, laptop etc.
The application in domain is more and more extensive.
Conventional silicon microphone is mainly by PCB（Printed Circuit Board, printed circuit board）, housing, MEMS（
Micro-Electro-Mechanical System, MEMS）Chip and IC（Integrated circuit, integrate electricity
Road）Chip forms.Housing cavity is much larger than back cavity as ante-chamber, the inner cavity of MEMS chip as back cavity, ante-chamber.Therefore, it is traditional
Silicon microphone be difficult to realize acceptable higher SNR（SIGNAL-NOISE RATIO, signal-to-noise ratio）And sensitivity.
Utility model content
The utility model embodiment provides a kind of silicon microphone of high SNR, for providing high SNR, height by improved structure
The silicon microphone of sensitivity.
Used technical solution is：
A kind of silicon microphone of high SNR, including：PCB, installs the first housing and the second housing on the pcb side by side,
And mount the MEMS chip and IC chip on the pcb and being located in the first shell body；Formed in the first shell body
There is the first cavity, it is interior formed with the second chamber formed with chip cavity, the second shell body between the MEMS chip and the PCB
Body, second cavity and the chip cavity are connected by the sound passage of leading opened up inside the PCB, on second housing
Offer acoustic holes.
Wherein, second cavity（22）Sound passage is led with described（24）And the chip cavity（23）Form ante-chamber,
First cavity（21）Form back cavity.
Wherein, the MEMS chip is the MEMS chip of high SNR.
As can be seen from the above technical solutions, the utility model embodiment has the following advantages：
1st, the second housing for offering acoustic holes is added, the chip cavity of its second internal cavity and MEMS chip connects
Logical, collectively as ante-chamber, and the first cavity of the first enclosure interior is closer to as back cavity in this way, ante-chamber and back cavity have
Volume, it is thus possible to improve sensitivity and the SNR of silicon microphone, the higher frequency response of silicon microphone can also be improved；
2nd, acoustic holes open up on the second housing, and extraneous light cannot be shone directly into MEMS chip, thus be avoided that
Harmful effect of the optical noise to MEMS；
3rd, the environmental factor such as steam is stopped be subject to the second housing, it is difficult to directly affects MEMS chip, can improve silicon wheat
The environmental suitability of gram wind.
Brief description of the drawings
, below will be to embodiment and description of the prior art in order to illustrate more clearly of the utility model embodiment technical solution
Needed in attached drawing be briefly described, it should be apparent that, drawings in the following description are only the utility model
Some embodiments, for those of ordinary skill in the art, without creative efforts, can also be according to this
A little attached drawings obtain other attached drawings.
Fig. 1 is a kind of structure diagram of the silicon microphone for high SNR that the utility model embodiment provides.
Embodiment
It is real below in conjunction with the utility model in order to make those skilled in the art more fully understand the utility model
The attached drawing in example is applied, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described
Embodiment is only the embodiment of the utility model part, instead of all the embodiments.Based on the reality in the utility model
Apply example, those of ordinary skill in the art's all other embodiments obtained without making creative work, all should
When the scope for belonging to the utility model protection.
Term " first " in the specification and claims of the utility model and above-mentioned attached drawing, " second ", " the 3rd "
Etc. being for distinguishing different objects, rather than for describing particular order.In addition, term " comprising " and " having " and they
Any deformation, it is intended that cover non-exclusive include.Such as contain the process of series of steps or unit, method, system,
The step of product or equipment are not limited to list or unit, but the step of not listing or unit are alternatively further included,
Or alternatively further include for the intrinsic other steps of these processes, method, product or equipment or unit.
Below by specific embodiment, it is described in detail respectively.
Please refer to Fig.1, the utility model provides a kind of silicon microphone of high SNR.
Silicon microphone is mainly made of PCB, housing, MEMS chip and IC chip.MEMS chip（DIE）, it is silicon base chip,
It is used for realization acoustic-electric conversion；IC chip is specially ASIC（Application Specific Integrated Circuit, specially
Use integrated circuit）, it is connected with MEMS DIE, the processing such as amplifies for being done to the electric signal of conversion, then export to PCB.On PCB
Equipped with pad or other input/output structures.
As shown in Figure 1, the silicon microphone of the high SNR of the utility model can include：
PCB10, installs the first housing 11 and the second housing 12 on the pcb side by side, and, it is mounted on described
PCB10 is upper and MEMS chip 13 and IC chip 14 in first housing 11.
Formed with the first cavity 21 in first housing 11, between the MEMS chip 13 and the PCB10 formed with
Chip cavity 23, second housing 12 are interior logical formed with the second cavity 22, second cavity 22 and the chip cavity 23
Cross inside the PCB10 sound passage 24 of leading opened up to connect, acoustic holes 15 are offered on second housing 12.
In this way, second cavity 22 and sound passage 24 and the chip cavity 23 of leading form ante-chamber, described the
One cavity 21 forms back cavity.External sound signal can enter ante-chamber from acoustic holes 15, vibrate the silicon thin film in MEMS chip.This reality
To apply in example, back cavity is made of the first cavity, and volume is larger, and even bigger suitable with ante-chamber, therefore, silicon thin film is easier to vibrate,
The sensitivity higher of silicon microphone, moreover, the design that ante-chamber back cavity volume is suitable so that the SNR highers of silicon microphone, can be with
Improve the higher frequency response of silicon microphone.
In the present embodiment, the acoustic holes 15 can be opened on the side wall of second housing 12, and acoustic holes 15 can be with
There is one or more.
Optionally, the waterproof sound passing membrane 16 for covering the acoustic holes is pasted with the side wall of second housing 12, to carry
High water resistance, improves the environmental suitability of silicon microphone.
Optionally, can be structure as a whole for the ease of production and assembly, first housing 11 and second housing 12,
At this time, two housings share a side wall.Optionally, in order to improve the height of security, the first housing 11 and the second housing 12
Can be identical.
Optionally, the MEMS chip of high SNR can be selected in the MEMS chip.The silicon wheat wind product of the present embodiment for bottom into
The product of sound, the MEMS die for having high SNR in industry arrange in pairs or groups therewith.Such as the MEMS DIE of the high SNR of ADI companies production.
In conclusion the utility model provides a kind of silicon microphone of high SNR, by using above-mentioned technical proposal, sheet
Utility model embodiment achieves following technique effect：
1st, the second housing for offering acoustic holes is added, the chip cavity of its second internal cavity and MEMS chip connects
Logical, collectively as ante-chamber, and the first cavity of the first enclosure interior is closer to as back cavity in this way, ante-chamber and back cavity have
Volume, it is thus possible to improve sensitivity and the SNR of silicon microphone, the higher frequency response of silicon microphone can also be improved；
2nd, acoustic holes open up on the second housing, and extraneous light cannot be shone directly into MEMS chip, thus be avoided that
Harmful effect of the optical noise to MEMS；
3rd, the environmental factor such as steam is stopped be subject to the second housing, it is difficult to directly affects MEMS chip, can improve silicon wheat
The environmental suitability of gram wind.
In the above-described embodiments, the description to each embodiment all emphasizes particularly on different fields, and is not described in some embodiment
Part, may refer to the associated description of other embodiments.
Above-described embodiment is only to illustrate the technical solution of the utility model, rather than its limitations；The common skill of this area
Art personnel should be understood：It can still modify the technical solution described in the various embodiments described above, or to its middle part
Technical characteristic is divided to carry out equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from this practicality
The spirit and scope of new each embodiment technical solution.
Claims (6)
- A kind of 1. silicon microphone of high SNR, it is characterised in that including：PCB（10）, the first housing on the pcb is installed side by side（11）With the second housing（12）, and, it is mounted on described PCB（10）Go up and be located at first housing（11）Interior MEMS chip（13）And IC chip（14）；First housing（11）It is interior formed with the first cavity（21）, the MEMS chip（13）With the PCB（10）Between shape Into there is chip cavity（23）, second housing（12）It is interior formed with the second cavity（22）, second cavity（22）With it is described Chip cavity（23）Pass through the PCB（10）What inside opened up leads sound passage（24）Connection, second housing（12）On open up There are acoustic holes（15）.
- 2. the silicon microphone of high SNR according to claim 1, it is characterised in thatSecond cavity（22）Sound passage is led with described（24）And the chip cavity（23）Form ante-chamber, first chamber Body（21）Form back cavity.
- 3. the silicon microphone of high SNR according to claim 1, it is characterised in thatThe acoustic holes（15）It is opened in second housing（12）Side wall on.
- 4. the silicon microphone of high SNR according to claim 1, it is characterised in thatSecond housing（12）Side wall on be pasted with the covering acoustic holes（15）Waterproof sound passing membrane（16）.
- 5. the silicon microphone of high SNR according to claim 1, it is characterised in thatFirst housing（11）With second housing（12）It is structure as a whole.
- 6. the silicon microphone of high SNR according to claim 1, it is characterised in thatThe MEMS chip is the MEMS chip of high SNR.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721135190.3U CN207269268U (en) | 2017-09-05 | 2017-09-05 | A kind of silicon microphone of high SNR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721135190.3U CN207269268U (en) | 2017-09-05 | 2017-09-05 | A kind of silicon microphone of high SNR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207269268U true CN207269268U (en) | 2018-04-24 |
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ID=61961450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721135190.3U Active CN207269268U (en) | 2017-09-05 | 2017-09-05 | A kind of silicon microphone of high SNR |
Country Status (1)
| Country | Link |
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| CN (1) | CN207269268U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698991A (en) * | 2018-12-25 | 2019-04-30 | 西安易朴通讯技术有限公司 | Water-proof sound-transmitting component and electronic equipment containing it |
| CN109769184A (en) * | 2019-01-16 | 2019-05-17 | 钰太芯微电子科技（上海）有限公司 | A kind of encapsulating structure of microphone |
-
2017
- 2017-09-05 CN CN201721135190.3U patent/CN207269268U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698991A (en) * | 2018-12-25 | 2019-04-30 | 西安易朴通讯技术有限公司 | Water-proof sound-transmitting component and electronic equipment containing it |
| CN109769184A (en) * | 2019-01-16 | 2019-05-17 | 钰太芯微电子科技（上海）有限公司 | A kind of encapsulating structure of microphone |
| CN109769184B (en) * | 2019-01-16 | 2024-04-02 | 钰太芯微电子科技（上海）有限公司 | Packaging structure of microphone |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181218 Address after: 628000 Shilong Industrial Park, Guangyuan Economic and Technological Development Zone, Sichuan Province (Hongtian Electronic Industrial Park) Patentee after: Sichuan Ruihao Microelectronics Technology Co., Ltd. Address before: 518000 Qinghu Industrial Park, Qingxiang Road, Longhua Street, Longhua New District, Shenzhen City, Guangdong Province, 9 Blocks A and 6E Patentee before: Shenzhen echen Electronics Co., Ltd. |