CN207250569U

CN207250569U - Semiconductor device

Info

Publication number: CN207250569U
Application number: CN201721320039.7U
Authority: CN
Inventors: 石田拓也
Original assignee: Asahi Kasei EMD Corp
Current assignee: Asahi Kasei Microdevices Corp
Priority date: 2016-10-14
Filing date: 2017-10-13
Publication date: 2018-04-17
Anticipated expiration: 2027-10-13

Abstract

A kind of semiconductor device of the rupture for inhibiting element of no island construction is provided.In conventional semiconductor device, exist and problem points as rupture easily occur in the exposed division of element.The sensor of the utility model possesses element, multiple lead terminals, multiple conductors and sealing.Element has magnetoelectricity conversion function or photoelectric converting function, has substrate, the active layer being formed on substrate and the multiple electrodes being electrically connected with active layer.Multiple lead terminals are configured in around Hall element when overlooking.The multiple electrodes of Hall element are electrically connected by conductor with multiple lead terminals respectively.Sealing contains synthetic resin, by the face of active layer side of Hall element, the side of Hall element, Hall element face, that is, back side with active layer opposite side outer edge and multiple conductors cover.

Description

Semiconductor device

Technical field

It the utility model is related to a kind of semiconductor device.

Background technology

In recent years, with the miniaturization of electronic equipment, the continuous small-sized/slimming of electronic unit.Particularly Magnetic Sensor, In infrared ray sensor, since the situation that the thickness of sensor has an impact the thickness of electronic equipment is more, it is strongly required The slimming of encapsulation.

For example, in patent document 1, the slimming on Magnetic Sensor, it is proposed that encapsulation is formed as into no island construction and (is saved The construction of the island portion for loading Hall element is omited).That is, the Magnetic Sensor without island construction has Hall element from close The construction that the lower surface of envelope resin is exposed.Moreover, in the Magnetic Sensor without island construction described in patent document 1, forming The whole back side of the substrate of Hall element forms protective layer, which exposes from the lower surface of sealing resin.

Patent document 1：Japanese Unexamined Patent Publication 2016-21549 publications

Utility model content

Utility model will solve the problems, such as

In element from the sensor without island construction that the lower surface of sealing resin is exposed, there is easily exposing in element Problem points as rupture occur for portion.

The problem of the utility model is to provide a kind of semiconductor device without island construction for the rupture for inhibiting element.

The solution used to solve the problem

(1) to solve the above-mentioned problems, the semiconductor device of a mode of the utility model has element, it is with magnetic Electric conversion function or photoelectric converting function, there is substrate, form active layer on the substrate and with active layer electricity The multiple electrodes of connection；Multiple lead terminals, the multiple lead terminal are configured in around the element when overlooking；It is more The multiple electrode of the element is electrically connected by a conductor, the multiple conductor with the multiple lead terminal respectively；And Sealing, it contains synthetic resin, by the face of the active layer side of the element, the side of the element, the element Covered with the outer edge at face, that is, back side of the active layer opposite side and the multiple conductor, wherein, the back side has Exposed surface.

(2) in the semiconductor device described in (1), the flat shape of the substrate is polygon, the substrate with The corner of the polygon on the face of the active layer opposite side is covered by the sealing.

(3) in the semiconductor device described in (1) or (2), the back side more than 5% and less than 50% by described close Envelope portion covers.

(4) in the semiconductor device described in (1) or (2), by the substrate and the active layer opposite side The thickness of the sealing of the outer edge covering in face is more than 1 μm and less than 30 μm

(5) in the semiconductor device described in (1) or (2), the element has a protective layer, and the protective layer is by the base The part not covered by the sealing covering with the face of the active layer opposite side of plate.

(6) in the semiconductor device described in (1) or (2), the element is the Hall member that thickness is less than 100 μm Part.

(7) in the semiconductor device described in (1) or (2), the element is that the infrared ray that thickness is less than 250 μm is examined Survey element.

(8) in the semiconductor device described in (1) or (2), the element is that the infrared ray that thickness is less than 250 μm is sent out Optical element.

(9) semiconductor device of another mode of the utility model possesses：Element, it is with magnetoelectricity conversion function or light Electric conversion function, has the active layer of substrate and formation on the substrate；And sealing, it is at least by the element The face of the active layer side and the outer edge covering with face, that is, back side of the active layer opposite side of the element, its In, the back side has exposed surface.

The effect of utility model

An a kind of mode according to the present utility model, there is provided the semiconductor dress without island construction of rupture for inhibiting element Put.

Brief description of the drawings

Fig. 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d) are sensor (the magnetic sensing for showing first embodiment respectively Device) stereogram, top view, sectional view corresponding with the C-C sections of Fig. 1 (b) and bottom view.

Fig. 2 is the figure of the manufacture method of the Magnetic Sensor of explanatory drawin 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d), is to show Go out the top view in state of the surface of substrate formed with Hall element.

Fig. 3 (a), Fig. 3 (b) and Fig. 3 (c) are the Magnetic Sensor of explanatory drawin 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d) Manufacture method figure, be show for the substrate formed with Hall element the back side formed protective layer process sectional view.

Fig. 4 is the figure of the manufacture method of the Magnetic Sensor of explanatory drawin 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d), is table Show the top view of the state after protective layer is formed at the back side of the substrate formed with Hall element.

Fig. 5 (a), Fig. 5 (b), Fig. 5 (c), Fig. 5 (d) and Fig. 5 (e) be by the order explanatory drawin 1 (a) of process, Fig. 1 (b), The top view of the manufacture method of the Magnetic Sensor of Fig. 1 (c) and Fig. 1 (d).

Fig. 6 is the top view of the preferable method of the process of explanatory drawin 5 (c).

Fig. 7 (a), Fig. 7 (b), Fig. 7 (c), Fig. 7 (d) and Fig. 7 (e) be by the order explanatory drawin 1 (a) of process, Fig. 1 (b), The resin seal process of the manufacture method of the Magnetic Sensor of Fig. 1 (c) and Fig. 1 (d) and the top view of later process.

Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) and Fig. 8 (d) are sensor (the infrared ray biography for showing second embodiment respectively Sensor) stereogram, top view, sectional view corresponding with the C-C sections of Fig. 8 (b) and bottom view.

Fig. 9 (a), Fig. 9 (b) and Fig. 9 (c) are the figures of the manufacture method for the sensor for illustrating embodiment, are as pin The process of protective layer is formed to the back side of the substrate formed with element and show with shown in Fig. 3 (a), Fig. 3 (b) and Fig. 3 (c) The sectional view of the different method of method.

Description of reference numerals

100：Magnetic Sensor；10：Hall element；10a：The face of the active layer side of Hall element is (with substrate opposite side Face)；10b：The side of Hall element；11：Substrate；111：The back side (face with active layer opposite side) of substrate；111a：Substrate The back side outer edge (back side of Hall element)；111b：The central portion at the back side of substrate；12：Active layer；13a~13d：Electricity Pole；21~24：Lead terminal；21a~24a：The upper surface of lead terminal；21b~24b：The medial surface of lead terminal；21c~ 24c：The lateral surface of lead terminal；21d~24d：The lateral surface of lead terminal；21e~24e：The lower surface of lead terminal is (from close The face that the second of envelope portion shows out)；31~34：Conductor；40：Insulating layer (protective layer)；40a：Lower surface (the Hall member of insulating layer The back side of part, exposed surface)；50：Sealing；50a：Element lower portions covering part (part of covering outer edge 111a)；51：First Face；52：Second face；60：Exterior coating；700：Infrared ray sensor；70：Infrared-ray detecting element；70a：The work of Hall element The face (face with substrate opposite side) of property layer side；70b：The side of Hall element；71：Substrate；711：The back side of substrate is (with work Face, the back side of infrared-ray detecting element of property layer opposite side)；711a：The outer edge at the back side of substrate；711b：The back of the body of substrate The central portion (exposed surface of infrared-ray detecting element) in face；72：Active layer；73a~73d：Electrode.

Embodiment

Hereinafter, the embodiment of the utility model is illustrated, but the utility model is not limited to embodiment as shown below. In embodiment as shown below, carry out technically preferably limiting to implement the utility model, but the restriction It is not the necessary important document of the utility model.

In addition, in figure used in the following description, it is illustrated that each several part size relationship sometimes with actual ruler Very little relation is different.

(first embodiment)

As first embodiment, it is to the semiconductor device that Hall element is used as to the element with magnetoelectricity conversion function Magnetic Sensor illustrates.

(structure of Magnetic Sensor)

As shown in Fig. 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d), the Magnetic Sensor 100 of the embodiment has Hall Element 10, four (multiple) lead terminal 21~24, four (more) conductor 31~34, plastic sealing 50 and Exterior coating 60.Magnetic Sensor 100 does not have the island portion for being used for loading Hall element 10.That is, Magnetic Sensor 100 has No island construction.

As shown in Fig. 1 (a), Magnetic Sensor 100 has the face shaping of cuboid.It is configured with suddenly in the inside of the cuboid That element 10, lead terminal 21~24 and conductor 31~34.Formed sealing 50 synthetic resin be filled in these components with Formed between six faces of cuboid, and form six faces.That is, sealing 50 has with Hall element 10 The first face 51 when substrate-side is downside as upper space, the second face 52 as lowest surface and two pairs of sides 53,54. In Fig. 1 (b), the second face 52 of sealing 50 only show.

As shown in Fig. 1 (b), Hall element 10 has substrate 11, forms being formed by semiconductive thin film on the substrate 11 Active layer (magnetic sense part) 12 and four (multiple) electrode 13a~13d being electrically connected with active layer 12.

As shown in Fig. 1 (c), Fig. 1 (d), the plan view shape of substrate 11 is square (polygon).Substrate 11 is for example by containing half The material of the GaAs (GaAs) of insulating properties is formed.In addition, as substrate 11, additionally it is possible to use the material shape by siliceous (Si) etc. Into semiconductor substrate, ferrite substrate etc. there is the substrate of poly- magnetic effect.

Active layer 12 is, for example, the film formed by the material containing compound semiconductors such as indium antimonide (InSb), GaAs.

The thickness of Hall element 10 is, for example, less than 100 μm.

In addition, Hall element 10 has insulating layer 40.Insulating layer 40 is at the back side of the substrate 11 of Hall element 10 (with activity The face of 12 opposite side of layer) 111 part (central portion) 111b in addition to the 111a of outer edge configures with contact condition.Also It is to say, the part for being not sealed with portion 50 and covering at the back side 111 of substrate 11 is covered by insulating layer 40.The following table of insulating layer 40 Face (face, that is, back side with the active layer opposite side of Hall element 10) 40a and the second face 52 of sealing 50 are in the same face It is interior.

In this way, the back side of Hall element 10 by insulating layer 40 lower surface 40a and substrate 11 the back side 111 outer edge 111a is formed, and the lower surface 40a of insulating layer 40 becomes exposed surface.That is, the back side of Hall element 10 has exposed surface.

As the material for forming insulating layer 40, synthetic resin, metal oxide can be enumerated.Insulating layer 40 can by by Any layer in layer that material containing synthetic resin is formed and the layer formed by the material of containing metal oxide form or The double-layer structural of these layers.As the example of synthetic resin, photo-induced corrosion resistant material (minus, eurymeric all can) can be enumerated, in ring The material of filler is included in the thermohardening type resin such as oxygen tree fat.As the material of filler, preferably silica (SiO₂), aluminium oxide (Al₂O₃) etc. ceramics.As metal oxide, titanium oxide (TiO can be used₂) etc..

In the case where insulating layer 40 is formed by the material comprising the synthetic resin for adding filler, insulating layer 40 covers Hall The thickness of the part at the back side 111 of element 10 is determined by the size of filler.The thickness is for example set to more than 2 μm, but from protection From the viewpoint of Hall element 10, more than 10 μm and less than 30 μm are preferably set to.In the situation that insulating layer 40 is metal oxide Under, in manufacture method, when increasing thickness, production cost becomes higher, therefore is for example preferably set to 1 μm or so.

In addition, in the case where being spherical filler, " size of filler " refers to the diameter of ball, is crushed with sphere In the case of the filler of shape afterwards, " size of filler " refers to the size of the best part in the diametric(al) of protocorm body, In the case where being the filler of threadiness, " size of filler " refers to the major diameter of fibre section.

Lead terminal 21~24 is for obtaining Magnetic Sensor 100 and the exterior terminal being electrically connected.As shown in Fig. 1 (b), Lead terminal 21~24 is configured in around Hall element 10 when overlooking.

As shown in Fig. 1 (a)~Fig. 1 (d), lead terminal 21~24 have upper surface (face of 51 side of the first face) 21a~ 24a, medial surface 21b~24b, lateral surface 21c~24c as 53 the same face of side with sealing 50, become and sealing Lateral surface 21d~24d of 50 54 the same face of side, as 52 the same face of the second face with sealing 50 lower surface 21e~ 24e and notch part 21f~24f.Notch part 21f~24f is the shape that the latter half of lead terminal 21~24 is lacked Part, is present in 54 side of side of sealing 50.

Lead terminal 21~24 is formed such as the metal material as copper (Cu) or copper alloy, iron (Fe) or the alloy of iron content, Particularly preferably it is made of copper.Can be to a part of the upper surface 21a~24a or lower surface 21e~24e of lead terminal 21~24 It is etched (that is, half-etching).Implement plating alternatively, it is also possible to a part of upper surface 21a~24a to lead terminal 21~24 Silver-colored (Ag) or nickel plating (Ni)-palladium (Pd)-gold (Au).Alternatively, it is also possible to lower surface 21e~24e to lead terminal 21~24 Implement nickel plating (Ni)-palladium (Pd)-gold (Au) or tin plating (Sn).

As shown in Fig. 1 (b), conductor 31~34 is respectively by electrode 13a~13d and lead terminal possessed by Hall element 10 21~24 are electrically connected.Specifically, lead terminal 21 is connected by conductor 31 with electrode 13a, conductor 32 by lead terminal 22 with electricity Lead terminal 23 is connected by pole 13b connections, conductor 33 with electrode 13c, and lead terminal 24 is connected by conductor 34 with electrode 13d.

Conductor 31~34 is for example formed by the material containing gold, silver or copper.

As shown in Fig. 1 (c), Fig. 1 (d), sealing 50 is (opposite with substrate 11 by the face of 12 side of active layer of Hall element 10 The face of side) 10a and side 10b, substrate 11 the back side 111 outer edge (back side of Hall element 10) 111a, insulating layer 40 Four side 40b, electrode 13a~13d, upper surface (face of 51 side of the first face) 21a~24a, interior of lead terminal 21~24 Side 21b~24b and notch part 21f~24f and conductor 31~34 cover.

Lateral surface 21c~24c of lead terminal 21~24 is in the same face with the side 53 of sealing 50.Lead terminal 21 ~24 lateral surface 21d~24d is in the same face with the side 54 of sealing 50.The lower surface 21e of lead terminal 21~24~ The lower surface 40a of 24e and insulating layer 40 and the second face 52 of sealing 50 are in the same face.

As shown in Fig. 1 (d), square four angle of the plan view shape of the forming substrate 11 on the back side 111 of substrate 11 Portion is covered by sealing 50.In addition, the outer edge 111a covered by sealing 50 at the back side 111 of substrate 11 overleaf 111 In more than 5% and less than 50% scope, preferably more than 15% and in less than 50% scope, more preferably more than 25% and In less than 50% scope.

As described above, the back side of Hall element 10 is by the lower surface 40a of insulating layer 40 and the back side 111 of substrate 11 Outer edge 111a is formed, and the lower surface 40a of insulating layer 40 becomes exposed surface.That is, Magnetic Sensor preferably In 100, the lower surface 40a of the insulating layer 40 at the back side of Hall element 10 and the outer edge 111a at the back side 111 of substrate 11 are formed In the outer edge 111a at the back side 111 of only substrate 11 covered by sealing 50.

Thus, the back side of Hall element 10 by the part that sealing 50 covers the back side of Hall element 10 5% with In upper and less than 50% scope, preferably more than 15% and in less than 50% scope, more preferably more than 25% and 50% In following scope.

It is further preferred, that the portion by the outer edge 111a at the back side 111 of the covering substrate 11 in the thickness of sealing 50 The thickness of (element lower portions covering part) 50a is divided for example to be set to the scope of more than 1 μm and less than 30 μm.Its reason is as follows.

That is, in the case where insulating layer 40 is synthetic resin, insulating layer 40 is being set to 10 μm of preferred thickness Above and in the case of less than 30 μm, by the way that the thickness of element lower portions covering part 50a is set to more than 10 μm and less than 30 μm, energy It is enough that the lower surface (the second face 52 of sealing 50) of the lower surface 40a and element lower portions covering part 50a of insulating layer 40 are set to same Simultaneously.In addition, in the case where insulating layer 40 is metal oxide, by the way that insulating layer 40 is set to preferred thickness for 1 μm or so, The lower surface (the second face 52 of sealing 50) of the lower surface 40a of insulating layer 40 and element lower portions covering part 50a can be set to The same face.

Thus,, can be by insulating layer 40 in the case where insulating layer 40 is set to preferred thickness when these comprehensive situations The lower surface (the second face 52 of sealing 50) of lower surface 40a and element lower portions covering part 50a be set under the element of the same face The thickness of portion covering part 50a becomes more than 1 μm and less than 30 μm of scope.

Synthetic resin for forming sealing 50, it is desirable to which insulating properties, linear expansion coefficient are expanded with the line of lead terminal The close value of coefficient, impact resistance, heat resistance (can bear to carry out Magnetic Sensor 100 high fever during reflow soldering) are and resistance to Hygroscopicity.

When the linear expansion coefficient for the synthetic resin for forming sealing 50 is the value close with the linear expansion coefficient of lead terminal When, the stress of the encapsulation generation because of thermal stress and in Magnetic Sensor 100 can be suppressed, therefore encapsulate and be less likely to occur to rupture.Cause This, such as in the case where lead terminal is made of copper, as the material of sealing 50, preferably using with the expansion of the line of copper Coefficient (16.8 × 10^-6/ DEG C) synthetic resin of close linear expansion coefficient.

On impact resistance, as the material of sealing 50, preferably using the high synthetic resin of spring rate.

As the synthetic resin of formation sealing 50, such as the heat-curing resins such as epoxy resin, teflon can be enumerated (Teflon, registration mark).The linear expansion coefficient of these resins is 10 × 10^-6/ DEG C~20 × 10^-6/ DEG C or so.Sealing 50 It can be formed, can also be formed by two or more synthetic resin by a kind of synthetic resin.In addition, employing use described later The forming process of thin slice in the case of forming sealing 50, can also exist in the part of 51 side of the first face of sealing 50 and form The synthetic resin of the thin slice.

Exterior coating 60 is formed at the following table for the lead terminal 21~24 that the same face is in the second face 52 of sealing 50 Face (back side) 21e~24e.Exterior coating 60 is for example formed by tin (Sn).

(action)

In the case where carrying out detection magnetic (magnetic field) using the Magnetic Sensor 100 of the embodiment, for example, by lead terminal 21 It is connected with power supply potential (+), and lead terminal 22 is connected with earthing potential (GND), so that electric current is from lead terminal 21 Flow to lead terminal 22.Then, the potential difference V1-V2 (=hall output voltage VH) between lead terminal 23,24 is measured.Separately Outside, the size in magnetic field is detected according to the size of the hall output voltage VH determined, according to hall output voltage VH just Bear to detect the direction in magnetic field.

(effect, effect)

On the Magnetic Sensor 100 of the embodiment, the substrate 11 for forming Hall element 10 is square, the back of the body of substrate 11 The outer edge 111a in face 111 is continuously covered from the side 10b of Hall element 10 by sealing 50.In addition, this is capped Partly (element lower portions covering part 50a) includes square four corner of forming substrate 11, is present in the area at the back side 111 More than 5% and less than 50% scope, is preferably in more than 15% and less than 50% scope, be more preferably the presence of in 25% with It is upper and less than 50% scope.

Thus, although the Magnetic Sensor 100 of the embodiment is constructed for no island and (thickness is less than 100 μm with thin ) Hall element 10, but due to substrate 11 the back side 111 outer edge 111a from the side 10b of Hall element 10 it is continuous Ground is covered by sealing 50, therefore Hall element 10 is less likely to occur to rupture.Particularly substrate 11 plan view shape be with In the case of the plan view shape in corner, because of the possibility ruptured using corner as stress caused by basic point in Hall element 10 Property becomes higher, but in the Magnetic Sensor 100 of present embodiment, since corner is covered by sealing 50, can reduce this Possibility.

There are following situation：When the area of the outer edge 111a covered by sealing 50 at the back side 111 of substrate 11 is less than The area at the back side 111 of substrate 11 5% when, Hall element 10 can not be obtained and do not allow easily rupturable effect.In addition, work as the ratio When (coverage rate that substrate outer edge portion is covered by sealing) is more than 50%, the area covered by insulating layer 40 relatively diminishes.Cause This, can not fully obtain performance obtained from existing because of insulating layer 40, prevent leakage current from flowing to Hall element 10 sometimes Effect.

That is, there are following situation：At the back side 111 of substrate 11 for forming Hall element 10, there are 40 He of insulating layer The element lower portions covering part 50a of sealing 50, but since element lower portions covering part 50a is a part for sealing 50, Formed by the material different from insulating layer 40.In which case it is preferable that the covering that substrate outer edge portion is covered by sealing 50 Rate is less than 50%.

In addition, Magnetic Sensor 100 according to first embodiment, due to the central portion 111b quilts at the back side 111 of substrate 11 Insulating layer 40 covers, therefore when being installed using solder, by hindering contact of the solder with Hall element 10, can prevent Leakage current flows to Hall element 10.

(manufacture method)

Illustrate that the magnetic of embodiment senses using Fig. 2~Fig. 7 (a), Fig. 7 (b), Fig. 7 (c), Fig. 7 (d) and Fig. 7 (e) The manufacture method of device 100.

First, as shown in Fig. 2, preparing to be formed by the material containing GaAs and pattern formed with multiple Hall elements 10 Wafer 150.Then, the back side (face with the face opposite side of the pattern formed with Hall element 10) 151 of wafer 150 is carried out Grinding is so that wafer 150 becomes defined thickness (such as 100 μm).As the method for grinding, exist using slurry (grinding agent with The mixture of water or ethanol etc.) method, the method that is ground using liquids such as acid that are ground.

Then, plan view shape is formed than Hall element 10 in the position of each Hall element 10 at the back side 151 of wafer 150 The small insulating layer 40 of plan view shape.As the forming method of insulating layer 40, enumerate shown in such as Fig. 3 (a), Fig. 3 (b), Fig. 3 (c) Method.

In the method shown in Fig. 3 (a), Fig. 3 (b), Fig. 3 (c), first, as shown in Fig. 3 (a), by photoetching process by arsenic The back side 151 (that is, back side 111 of the substrate 11 of Hall element 10) for changing the wafer 150 that gallium is formed is formed in each Hall There is the corrosion-resisting pattern 140 of opening portion 141 at the position of element 10.Then, by sputtering method or vapour deposition method the state crystalline substance The back side 151 of circle 150 forms metal oxide film 41.Thus, as shown in Fig. 3 (b), in the upper surface of corrosion-resisting pattern 140 and against corrosion (that is, direct at the back side 151 of wafer 150) forms metal oxide film 41 in the opening portion 141 of pattern 140.

Then, the state by using liquids such as n-methyl-2-pyrrolidone (NMP) by corrosion-resisting pattern 140 from Fig. 3 (b) The back side 151 of wafer 150 remove, the gold that the back side 151 of wafer 150 is directly formed only is remained in as shown in Fig. 3 (c) Belong to oxide-film 41 and be used as insulating layer 40 (using stripping mode).Thus, as shown in figure 4, on the back side 151 of wafer 150 The position of each Hall element 10 forms insulating layer 40.

Then, by along line of cut L1 cutting crystal wafers 150, to obtain the Hall element 10 of singualtion.Thus, obtain Hall elements 10 of the central portion 111b at the back side 111 of substrate 11 formed with insulating layer 40.

Then, the lead frame 120 shown in Fig. 5 (a) is prepared.Lead frame 120 has leading part 121~124.Leading part 121 ~123 overlook when the shape with the two or four lead terminal comprising adjacent Magnetic Sensor 100.Leading part 124 has There is the shape of a lead terminal comprising Magnetic Sensor 100.Such as Fig. 7 (a), Fig. 7 (b), Fig. 7 (c), Fig. 7 (d) and Fig. 7 (e) Shown, lead frame 120 has in the position corresponding with notch part 21f~24f of each lead terminal of leading part 121~124 to be lacked Oral area 120f.

In addition, do not illustrate by leading part 122 and connecting portion that the outer rim of leading part 124 along lead frame 120 is connected with And by connecting portion of each leading part 121~124 along line of cut L2 connections.

Then, the heat resistance film 80 for example made of polyimides is pasted at the back side of lead frame 120, with heat resistance film 80 The part (perforation region) there is no leading part 121~124 of lead frame 120 is sealed from rear side.As heat resistance film 80, make There is the heat resistance film of the adhesive layer of insulating properties used in a face, connect heat resistance film 80 and lead frame 120 by the adhesive layer Close.That is, obtain the conjugant 81 of heat resistance film 80 and lead frame 120.Fig. 5 (b) shows the state after the process.

Then, will be configured in Hall element 10 of the back side 111 of substrate 11 formed with insulating layer 40 in the upper of conjugant 81 Surface (adhesive layer of heat resistance film 80) Hall element configuring area (by lead terminal 21~24 surround region) (that is, into Row chip engages).Fig. 5 (c) shows the state after the process.

In the process, as shown in fig. 6, making insulating layer 40 be embedded in heat resistance film 80 when the condition of adjustment chip engagement During adhesive layer 80a, during the sealing 50 stated after its formation, resin is easily entered by the Hall element 10 with insulating layer 40 and viscous Close in the space 84 that layer 80a is surrounded.But in this case, the lower surface 40a of insulating layer 40 is from the second face 52 of sealing 50 The prominent amount with invading the partial response of adhesive layer 80a.

Then, it is heat-treated and (that is, is cured) after chip engagement has been carried out, makes heat resistance film 80 and insulating layer 40 Adaptation improves.

Then, one end of conductor 31~34 is connected with each lead terminal 21~24 respectively, by the another of conductor 31~34 End is connected with electrode 13a~13d (that is, carries out wire bonding) respectively.Fig. 5 (d) shows the state after the process.

Then, the conjugant 81 of the state of Fig. 5 (d) is put into mould, it is close to be formed in the upper surface side of conjugant 81 Envelope portion 50.Specifically, first, as shown in Fig. 7 (a), prepare thin slice 94 and possess the mould 90 of lower die 91 and upper mold 92, will be thin Piece 94 is configured to the entire surface of the lower surface (the opposite face with lower die 91) of covering upper mold 92.Thin slice 94 is for example by teflon (note Volume trade mark) it is made.

Then, the conjugant 81 of the state of Fig. 5 (d) is configured in mould 90.Specifically, 31~34 side court of conductor is made On conjugant 81 is placed in lower die 91, configure upper mold 92 in the upside of conductor 31~34 with separating predetermined distance, make thin slice 94 are adsorbed in the lower surface of upper mold 92.At this time, the interval between the lower surface of thin slice 94 and the upper surface of lower die 91 is set as The big size of the setting value (less than 100 μm) of distance D than Fig. 2.Fig. 7 (a) shows the state.

Then, after molten resin is flowed into the space between upper mold 92 and lower die 91 to the state of Fig. 7 (a), make Upper mold 92, which declines, to apply compression stress to molten resin, between thus making between the lower surface of thin slice 94 and the upper surface of lower die 91 It is consistent every the setting value of the distance D with Fig. 2.Afterwards, sealing 50 is formed by cooling down.In the process, resin enter by In the space that the adhesive layer of Hall element 10 and heat resistance film 80 with insulating layer 40 surrounds, so as to form element lower portions covering Portion 50a.Fig. 7 (b) shows the state.

Then, after the conjugant 81 formed with sealing 50 is taken out from mould 90, by heat resistance film 80 from connecing Zoarium 81 is peeled off.Thus, multiple sensor precursors (Magnetic Sensor 100 before forming exterior coating 60) are obtained to be combined into Combination 1000.Fig. 7 (c) and Fig. 5 (e) show the state.

, pair then exterior coating is implemented in the face that the lead frame 120 of the same face is in the second face 52 of sealing 50.By This, at the lower surface of lead terminal 21~24 (back side), 21e~24e forms exterior coating 60, obtains multiple 100 knots of Magnetic Sensor Close the combination 1001 formed.Fig. 7 (d) shows the state.

Then, after pasting cutting belt 93 in the first face 51 of sealing 50, cutting belt 93 is made to be combined in downside Body 1001 is arranged on cutter device, and combination 1001 is cut along the line of cut L2 shown in Fig. 5 (e).Thus, multiple magnetic are obtained to pass Sensor 100.Fig. 7 (e) shows the state.

In addition, resin enter by Hall element 10, insulating layer 40 and heat resistance film 80 adhesive layer surround space Lai Formed in the process of element lower portions covering part 50a, resin is around the outer edge of the lower surface 40a of insulating layer 40 sometimes.In the feelings Under condition, the exposed surface at the back side of Hall element 10 is less than the lower surface 40a of insulating layer 40.Can also be as the situation, in magnetic In sensor 100, the outer edge of the lower surface 40a of insulating layer 40 is covered by sealing, so that the lower surface 40a of insulating layer 40 Central portion becomes exposed surface.

(second embodiment)

As second embodiment, the semiconductor to infrared-ray detecting element to be used as to the element with photoelectric converting function Device, that is, infrared ray sensor illustrates.

(structure of infrared ray sensor)

As shown in Fig. 8 (a), Fig. 8 (b), Fig. 8 (c) and Fig. 8 (d), the infrared ray sensor 700 of the embodiment has Infrared-ray detecting element 70, four (multiple) lead terminal 21~24, two (more) conductor 31,32 and by containing synthesize tree The sealing 50 that the material of fat is formed.Infrared ray sensor 700 does not have the island portion for being used for loading infrared-ray detecting element 70. That is the infrared ray sensor 700 of the embodiment is constructed with no island.

The infrared ray sensor 700 of the embodiment replaces Hall element 10 with infrared-ray detecting element 70, does not have Standby insulating layer 40 and exterior coating 60, point in addition are identical with the Magnetic Sensor 100 of first embodiment.Therefore, only Pair point different from Magnetic Sensor 100 illustrates.

As shown in Fig. 8 (b), Fig. 8 (c), infrared-ray detecting element 70 has the substrate 71 of infrared transparency, is formed in base The active layer (infrared ray sense part) 72 formed by semiconductive thin film on plate 71 and be electrically connected with active layer 72 two are (more It is a) electrode 73a, 73b.Electrode 73a is connected with the n-layer of active layer 72, and electrode 73b is connected with the p-type layer of active layer 72.

Substrate 71 is for example formed by the material of the GaAs (GaAs) containing half insulation.

Active layer 72 is, for example, the film formed by the material containing compound semiconductors such as indium antimonide (InSb), GaAs.

The thickness of infrared-ray detecting element 70 is, for example, less than 250 μm.

In addition, as shown in Fig. 8 (c), Fig. 8 (d), sealing 50 is by the face of 72 side of active layer of infrared-ray detecting element 70 (face with 71 opposite side of substrate) 70a and side 70b, infrared-ray detecting element 70 substrate 71 the back side 711 outer edge 711a, electrode 73a, 73b, lead terminal 21~24 upper surface (face of 51 side of the first face) 21a~24a, medial surface 21b~ 24b and notch part 21f~24f and conductor 31,32 cover.

The central portion 711b at the back side 711 of substrate 71 is not sealed with portion 50 and covers.The central portion 711b at the back side 711 is red The smooth surface of outside line, is present in the second face 52 than sealing 50 by inboard position, exposes from the second face 52 of sealing 50.

As shown in Fig. 8 (d), the vertical view shape of the substrate 71 of the formation infrared-ray detecting element 70 on the back side 111 of substrate 11 Square four corner of shape is covered by sealing 50.

In addition, in infrared ray sensor 700 preferably, the back side 111 of substrate 11 is infrared-ray detecting element 70 back side, the outer edge 711a covered by sealing 50 at the back side 711 overleaf 711 more than 5% and less than 50% In the range of, preferably more than 15% and in less than 50% scope, more preferably more than 25% and in less than 50% scope.

In addition, the part that the outer edge 711a at the back side 711 by substrate 71 in the thickness of sealing 50 is covered is (under element Portion's covering part) thickness of 50a is for example set as in more than 1 μm and less than 30 μm of scope.

(action)

In the case where detecting infrared ray amount using the infrared ray sensor 700 of the embodiment, by the back of the body of substrate 71 Face 711 is set to the potential difference V1-V2 (=photoelectromotive force) between smooth surface, such as measure lead terminal 21,22.In addition, according to The size of the photoelectromotive force determined detects received infrared ray amount.

(effect, effect)

On the infrared ray sensor 700 of the embodiment, the substrate 71 for forming infrared-ray detecting element 70 is square, The outer edge 711a at the back side 711 of substrate 71 is continuously covered from the side 70b of infrared-ray detecting element 70 by sealing 50. In addition, the part (element lower portions covering part 50a) of the covering includes square four corner of forming substrate 71, it is present in the back of the body More than the 5% of the area in face 711 and less than 50% scope, more than 15% and less than 50% scope is preferably in, it is more excellent Choosing is present in more than 25% and less than 50% scope.

Thus, although the infrared ray sensor 700 of the embodiment is constructed for no island and (thickness is 250 μm with thin It is following) infrared-ray detecting element 70, but due to substrate 71 the back side 711 outer edge 711a from infrared-ray detecting element 70 Side 70b rise and continuously covered by sealing 50, therefore infrared-ray detecting element 70 is less likely to occur to rupture.Particularly in base The plan view shape of plate 71 be the plan view shape with corner in the case of, because using corner as stress caused by basic point and infrared The possibility that line detection devices 70 rupture becomes higher, but in the infrared ray sensor 700 of present embodiment, due to corner Covered by sealing 50, therefore the possibility can be reduced.

There are following situation：When the area of the outer edge 711a covered by sealing 50 at the back side 711 of substrate 71 is less than The area at the back side 711 of substrate 71 5% when, can not obtain infrared-ray detecting element 70 be less likely to occur rupture effect.Separately Outside, when the ratio (coverage rate that substrate outer edge portion is covered by sealing) becomes larger, smooth surface (the central portion 711b at the back side 711) Relatively diminish, the light receiving efficiency of infrared ray declines, therefore the ratio preferably is set to less than 50%.

In addition, the central portion 711b at the back side 711 of the substrate 71 as smooth surface of infrared-ray detecting element 70 is from sealing Expose in second face 52 in portion 50.That is, the back side 711 of the back side, that is, substrate 71 of infrared-ray detecting element 70 have not by The exposed surface (central portion 711b) that sealing 50 covers.Thus, compared with the central portion 711b protected seams covering at the back side 711, Infrared detection sensitivity is better.Further, since smooth surface (the central portion 711b at the back side 711) is present in than sealing 50 By inboard position, therefore even if being covered without protected seam, smooth surface is not allowed to be also easy to produce stain, damage yet in the second face 52.

(manufacture method)

It is big with the manufacture method of Magnetic Sensor 100 in addition to a part on the manufacture method of infrared ray sensor 700 Cause identical, therefore only a pair point different from the manufacture method of Magnetic Sensor 100 illustrates.

Prepare the gaas wafer formed with infrared-ray detecting element 70, to replace the formation shown in Fig. 2 to have Hall element 10 wafer 150, forms plan view shape in the position of each infrared-ray detecting element at the back side of the gaas wafer and compares infrared ray The small protective layer (insulating layer 40 equivalent to Fig. 4) of the plan view shape of detecting element.The protective layer is formed by photo-induced corrosion resistant material.

In chip bonding process, infrared-ray detecting element 70 is replaced the Hall element 10 shown in Fig. 5 (c) configure and connect The upper surface of zoarium 81.

After the formation process of sealing 50 and it is separated into before multiple infrared ray sensors 700, by protective layer from red The back side 711 of the substrate 71 of outer line detection devices 70 removes.That is, it will be equivalent to insulate in the state of shown in Fig. 7 (c) The protective layer of layer 40 removes.

In addition, the formation process without exterior coating 60.

In the method, in the formation process of sealing 50, in order to protect the back side of the substrate 71 as smooth surface 711, the central portion 711b at the back side 711 is formd by protective layer.

(note)

In the Magnetic Sensor 100 of first embodiment, the central portion at the back side 111 of substrate 11 is covered by insulating layer 40 111b, but insulating layer 40 can not also be set, expose the central portion 111b at the back side 111.In this case, the back of the body of substrate 11 The overall back side for becoming Hall element 10 in face 111, the central portion 111b at the back side 111 become exposed surface.

In the Magnetic Sensor 100 of first embodiment and the infrared ray sensor 700 of second embodiment, Hall element 10 and the plan view shape of infrared-ray detecting element 70 be square, but also can in the case of polygon beyond square Using.

In the infrared ray sensor 700 of second embodiment, smooth surface (the central portion 711b at the back side 711 of substrate 71) Expose, but the protective layer of infrared transparency can also be set in the smooth surface.In this case, by by gold such as titanium oxide Belong to the protective layer that oxide forms 1 μm or so, it can be ensured that insulating properties simultaneously reduces infrared reflection rate.Alternatively, it is also possible to set The protective layer simultaneously makes the lower surface of protective layer consistent with the second face 52.

In the manufacture method of the infrared ray sensor 700 of second embodiment, set premised on removal by photic anti- The protective layer that corrosion material is formed after forming sealing 50, which is removed, but can also set by titanium oxide etc. The protective layer that metal oxide is formed, leaves the protective layer without removing it.

In the forming method of the sealing 50 illustrated by first embodiment, the following table of upper mold 92 is covered by thin slice 94 Face, and decline upper mold 92 to apply compression stress after molten resin is flowed into mould 90, but can also replace Which carries out and transmits shaping, can not also use thin slice 94.

As forming the method for protective layer that is formed by metal oxide at the position of each element of wafer rear, except Forming method (Fig. 3 (a), Fig. 3 (b) and Fig. 3 of the insulating layer 40 illustrated in the manufacture method of above-mentioned Magnetic Sensor 100 (c) method shown in) beyond, additionally it is possible to enumerate the method shown in Fig. 9 (a), Fig. 9 (b) and Fig. 9 (c).

In the method shown in Fig. 9 (a), Fig. 9 (b) and Fig. 9 (c), first, by sputtering method or vapour deposition method in wafer The entire surface at 150 back side 151 forms metal oxide film 41.Then, using negative resist, formed at the position of each element The remaining corrosion-resisting pattern 140A of erosion resistant 142.Fig. 9 (a) shows the state.

Then, it will not removed, become by the metal oxide film 41 that corrosion-resisting pattern 140A is covered by dry ecthing, wet etching State shown in Fig. 9 (b).Then, corrosion-resisting pattern 140A is removed using organic solvent etc..Thus, as shown in Fig. 9 (c), in crystalline substance Insulating layer 40 is formed at the position of each element at the back side 151 of circle 150.

As the method that insulating layer (protective layer) is formed by synthetic resin, in the case of photo-induced corrosion resistant material, Neng Goulie The photoetching process using photomask is lifted, in the case of heat reactive resin, can be enumerated using distributor come in the formation of protective layer Position irrigates resin and makes its cured method.

In the case where the double-layer structural by possessing synthetic resin layer and metal oxide layer forms insulating layer (protective layer), Such as in the method shown in the method shown in Fig. 3 (a), Fig. 3 (b) and Fig. 3 (c), Fig. 9 (a), Fig. 9 (b) and Fig. 9 (c), After forming metal oxide layer in the position of each element of wafer rear first, by above-mentioned method in the gold formed Belong to and form synthetic resin layer on oxide skin(coating).

(variation)

The infrared-ray detecting element 70 of second embodiment is replaced by using infrared light-emitting component, can be obtained infrared Line light emitting diode.Infrared light-emitting diode is the infrared light emission member used as the element with photoelectric converting function The semiconductor device of part.Photoelectric converting function possessed by infrared-ray detecting element is the work(for converting optical signals to electric signal Can, photoelectric converting function possessed by infrared light-emitting component is the function of converting electrical signals to optical signal.Infrared light emission Element is preferably the infrared light-emitting component that thickness is less than 250 μm.

In this infrared light-emitting diode, it can obtain same with the infrared ray sensor of second embodiment 700 Effect.

(embodiment)

Hereinafter, the embodiment and comparative example of the utility model are illustrated.

Produced by the method described in first embodiment shown in Fig. 1 (a), Fig. 1 (b), Fig. 1 (c) and Fig. 1 (d) First embodiment Magnetic Sensor 100.

As the substrate 11 of Hall element 10, GaAs substrate has been used., will by being ground the back side 150 of wafer 150 The thickness of Hall element 10 is set to 90 μm.

The thickness of insulating layer 40 is set as 10 μm.The central portion 111b at the back side 111 of substrate 11 is covered by insulating layer 40, if For 70% state covered by insulating layer 40 of the area at the back side 111.Use Hitachi's chemical conversion production as negative resist " KI-1000-T4 ", insulating layer 40 is formed by using the photoetching process of photomask.That is, insulating layer 40 is by photic anti- Corrosion material is formed.To formed insulating layer 40 after wafer 150 the back side 151 paste UV curing type cutting belts after in the state of into The cutting gone for the singualtion of Hall element 10.

Plate after the entire surface of Cu plates applies Ni-Pd-Au coating is processed to form leading part 121~124, by This produces lead frame 120.As heat resistance film 80, polyimide film has been used.As adhesive layer 81a, the thickness has been used to be 10 μm of thermoplastic resin.

As conductor 31~34, Au lines have been used.As the synthetic resin of sealing 50, use and contained silica The epoxy resin of filler.

As thin slice 94, " 50MW " for having used Asahi Glass (Co., Ltd.) to produce.The thickness of the thin slice 94 is 50 μm.With The mode that the thickness of Magnetic Sensor 100 is set as 185 μm the formation of sealing 50 has been subjected to.In the formation process of sealing 50 In, resin is entered in the space by the adhesive layer encirclement of Hall element 10, insulating layer 40 and heat resistance film 80, with 10 μm of thickness Form element lower portions covering part 50a.

Obtained Magnetic Sensor 100 has insulating layer 40 and element lower portions covering part 50a as shown in Fig. 1 (c), The area of outer edge (comprising including the corner) 111a covered by sealing 50 at the back side 111 of substrate 11 is the face at the back side 111 Long-pending 30%.

In the formation process without insulating layer 40 epoxy formed with 10 μm has been pasted at the back side 151 of wafer 150 In the state of the UV curing types cutting belt (that is, cutting-chip engages one-piece type cutting belt) of class chip attachment film, Hall has been carried out The singualtion of element 10.That is, the formation of sealing 50 is carried out by not forming the method for element lower portions covering part 50a Process.Magnetic Sensor is produced by the method same as Example 1 of point in addition.Thus, obtained in Fig. 1 (c) With the insulating layer 40 formed by epoxy resin, without element lower portions covering part 50a, Hall element 10 the back side 111 with it is close The consistent Magnetic Sensor in second face 52 in envelope portion 50.

The Magnetic Sensor of embodiment 1 and comparative example 1 is prepared to 20 respectively, has carried out following experiment.

As measuring machine, prepare digital force-measuring instrument (IMADA produces " ZP-50 "), point diameter is mounted with its press section For the pressing fixture of 0.2mm.

First, Magnetic Sensor is positioned over the flat of platform in a manner of the second face 52 of sealing 50 is located at downside On horizontal plane.In this condition, fixture will pressed with load：About 200g, compressing time：The condition of about 1 second is pressed against sealing After first face 51 in portion 50, the pressing is released.Then, the action of 5 pressings and releasing is repeated.That is, The load test for the load for applying 5 about 200g is carried out.

Then, using the Magnetic Sensor after entity microscope observing load test sealing 50 the second face 52, come true Whether the substrate 11 recognized in Hall element 10 is ruptured.

As a result, in the Magnetic Sensor of embodiment 1,20 all without rupturing, but the magnetic in comparative example 1 senses In device, there are 10 to be ruptured in 20.That is, it is known that pass through the back side 111 by sealing covering Hall element The 30% of outer edge (comprising including corner) 111a, can be less likely to occur to rupture.It is thought that because by being covered by sealing Cover and disperseed the stress for concentrating on corner.

Claims

1. a kind of semiconductor device, it is characterised in that possess：

Element, its with magnetoelectricity conversion function or photoelectric converting function, have substrate, formed active layer on the substrate with And the multiple electrodes being electrically connected with the active layer；

Multiple lead terminals, the multiple lead terminal are configured in around the element when overlooking；

The multiple electrode of the element is electrically connected by multiple conductors, the multiple conductor with the multiple lead terminal respectively Connect；And

Sealing, it contains synthetic resin, by the face of the active layer side, the side of the element, the member of the element Part is covered with the outer edge at face, that is, back side of the active layer opposite side and the multiple conductor,

Wherein, the back side has exposed surface.

2. semiconductor device according to claim 1, it is characterised in that

The flat shape of the substrate is polygon, described polygon on the face with the active layer opposite side of the substrate The corner of shape is covered by the sealing.

3. semiconductor device according to claim 1 or 2, it is characterised in that

More than 5% and less than the 50% of the back side is covered by the sealing.

4. semiconductor device according to claim 1 or 2, it is characterised in that

The thickness for the sealing that the outer edge of the substrate and the face of the active layer opposite side is covered for 1 μm with It is upper and less than 30 μm.

5. semiconductor device according to claim 1 or 2, it is characterised in that

The element has protective layer, and the protective layer is by the substrate with the face of the active layer opposite side not by institute State the part covering of sealing covering.

6. semiconductor device according to claim 1 or 2, it is characterised in that

The element is the Hall element that thickness is less than 100 μm.

7. semiconductor device according to claim 1 or 2, it is characterised in that

The element is the infrared-ray detecting element that thickness is less than 250 μm.

8. semiconductor device according to claim 1 or 2, it is characterised in that

The element is the infrared light-emitting component that thickness is less than 250 μm.

9. a kind of semiconductor device, it is characterised in that possess：

Element, it has the activity of substrate and formation on the substrate with magnetoelectricity conversion function or photoelectric converting function Layer；And

Sealing, it is at least by opposite with the active layer the one of the face of the active layer side of the element and the element The outer edge covering at face, that is, back side of side,

Wherein, the back side has exposed surface.