CN207183794U - Short cavity sticking-type 532nm semiconductor pump lasers - Google Patents
Short cavity sticking-type 532nm semiconductor pump lasers Download PDFInfo
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- CN207183794U CN207183794U CN201721189784.2U CN201721189784U CN207183794U CN 207183794 U CN207183794 U CN 207183794U CN 201721189784 U CN201721189784 U CN 201721189784U CN 207183794 U CN207183794 U CN 207183794U
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Abstract
A kind of short cavity sticking-type 532nm semiconductor pump lasers are the utility model is related to, are made up of LD laser diode pumping sources, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2, it is characterised in that：LD laser diode pumping sources, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2 are by being arranged sequentially in same optical axis from front to back, to be close to arrange between LD laser diode pumping sources and LM operation materials, planoconvex lens M2 is the colimated light system of laser.It removes focus lamp, and the 532nm semiconductor lasers manufactured using related process are cost-effective, reduce size, improve efficiency, similarly serving to favor large-scale production.
Description
Technical field
A kind of short cavity sticking-type 532nm semiconductor pump lasers are the utility model is related to, belong to laser apparatus, especially
It is a kind of device design by second_harmonic generation wavelength for the short cavity sticking-type semiconductor pump laser of 532nm laser.
Background technology
In recent years, with the development of LD technologies, the green laser modules of LD pumpings because its have good directionality, decay it is small,
The advantages that visual acuity, it can be used in bright and outdoor location, in fields such as optical communication, laser display and measurements, application is wide
It is general.With the continuous progress of science and technology, the production of electronic device increasingly optimizes, while technology is increasingly improved, to it
Core component laser module also proposes higher requirement accordingly, pursues small size, in light weight, high efficiency just becomes laser
The only way which must be passed of module design.
Traditional 532nm lasers are by pumping source, focus lamp, operation material, frequency-doubling crystal, beam expanding lens and planoconvex lens group
Into.Operation material selects Nd-doped yttrium vanadate, Nd:YVO4For tetragonal crystal, belong to zircon（SrSiO4）Type structure, single shaft crystallographic system.
Nd:YVO4Middle active ions position has a low point group symmetry, and ion oscillation intensity is big.Nd ions have sensitization to make in mechanism
With improving its absorbability.Nd:YVO4There is larger stimulated emission interface at 1.06 μm, be Nd:Four times of YAG,
Absorber Bandwidth about 20nm near 808nm, is Nd:As many as five times of YAG, and absorption peak is also very high, so particularly suitable for
LD pumpings.
Frequency multiplication, optical second harmonic.In general laser is all to directly obtain laser using gain medium, so
Wave band it is very limited, if using frequency doubling technology, i.e., carry out frequency multiplication in the laser using frequency-doubling crystal, then be obtained with
More multiwave laser outputs, so the selection of frequency-doubling crystal is particularly significant.Match-type is that the LBO refractive indexes of I types are
1.56, effective nonlinear coefficient 1.16 × 10-12M/v, damage threshold 2.5GW/cm2, it is absorbed as 0.005cm-1.Because its have it is upper
Characteristic is stated, the frequency-doubling crystal being widely used as in semiconductor laser.
The laser diode LD that it is 808nm by wavelength output that the principle for the semiconductor laser that output wavelength is 532nm, which is,
As pumping source, pumped laser crvstal Nd-doped yttrium vanadate Nd:YVO4The laser that output wavelength is 1064nm is obtained, is then passed through again
After frequency-doubling crystal frequency multiplication, the laser that wavelength is 532nm will be obtained and exported.This technology has been very ripe, but in order to up to
Requirement to modern science and technology to technique, we carry out improvement innovation on the basis of traditional handicraft, in the composition zero of laser
Remove focus lamp in part, such design can both reduce laser dimensions, cost-effective, make laser diode pumping source LD straight
Connect and act on working-laser material, the two takes the mode closely pasted, and controls light to dissipate by adjusting the distance between they
Degree, while the purpose of increase lasing efficiency is served again.
The content of the invention
The purpose of this utility model is to provide a kind of short cavity sticking-type 532nm semiconductor pump lasers, and it removes focusing
Mirror, the 532nm semiconductor lasers that are manufactured using related process are cost-effective, reduce size, improve efficiency, similarly serve to favor big rule
The production of mould.
What the technical solution of the utility model was realized in：Short cavity sticking-type 532nm semiconductor pump lasers, by LD
Laser diode pumping source, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2 compositions, it is characterised in that：LD swashs
Optical diode pumping source, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2 are by being arranged sequentially in from front to back
In same optical axis, to be close to arrange between LD laser diode pumping sources and LM operation materials, planoconvex lens M2 is the standard of laser
Direct line system.
Described LD laser diode pumping sources are laser diode, and pump light peak output wavelength is 808nm, pump light
It is applied in gain medium.
Described LM operation materials are Nd-doped yttrium vanadate Nd:YVO4, laser is wavelength 1064nm.
Good effect of the present utility model is that its size is small, in light weight, efficiency high；Remove focus lamp, utilize related process
The 532nm semiconductor lasers of manufacture are cost-effective, reduce size, improve efficiency, similarly serve to favor large-scale production.
Brief description of the drawings
Fig. 1 is the structure composition schematic diagram of the embodiment of the present invention.
Embodiment
The utility model is described further below in conjunction with the accompanying drawings：As shown in figure 1, short cavity sticking-type 532nm semiconductors
Pump laser, it is made up of LD laser diode pumping sources, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2,
It is characterized in that：LD laser diode pumping sources, LM operation materials, LBO frequency-doubling crystals, beam expanding lens M1, planoconvex lens M2 are by the past
Being arranged sequentially in same optical axis after, to be close to arrange between LD laser diode pumping sources and LM operation materials, plano-convex
Mirror M2 is the colimated light system of laser.
Described LD laser diode pumping sources are laser diode, and pump light peak output wavelength is 808nm, pump light
It is applied in gain medium.
Described LM operation materials are Nd-doped yttrium vanadate Nd:YVO4, laser is wavelength 1064nm.
The pump light that LD laser diode pumping sources are sent carries out pumping to LM operation materials, produces laser, is applied to LBO
Frequency-doubling crystal, then expanded by beam expanding lens, collimated finally by colimated light system；LD laser diode pumping sources are laser two
Pole pipe, output wavelength 808nm, pump light are applied in working-laser material LM.
The laser diode LD that output wavelength is 808nm is taken as pumping source, pumping operation material Nd:YVO4Obtain
1064nm laser, then by obtaining the laser that output wavelength is 532nm after LBO frequency-doubling crystal frequencys multiplication.
Both LD laser diode pumping sources and LM operation materials take the mode closely pasted, and it is laser diode-pumped to adjust LD
The distance between source and LM operation materials, change the divergence of hot spot.
Claims (3)
1. short cavity sticking-type 532nm semiconductor pump lasers, by LD laser diode pumping sources, LM operation materials, LBO frequencys multiplication
Crystal, beam expanding lens M1, planoconvex lens M2 compositions, it is characterised in that：LD laser diode pumping sources, LM operation materials, LBO frequencys multiplication are brilliant
Body, beam expanding lens M1, planoconvex lens M2 are by being arranged sequentially in same optical axis from front to back, LD laser diode pumping sources and LM works
Make to be close to arrange between material, planoconvex lens M2 is the colimated light system of laser.
2. according to the short cavity sticking-type 532nm semiconductor pump lasers described in claim 1, it is characterised in that described LD
Laser diode pumping source is laser diode, and pump light peak output wavelength is 808nm, and pump light is applied to laser gain Jie
In matter.
3. according to the short cavity sticking-type 532nm semiconductor pump lasers described in claim 1, it is characterised in that described LM
Operation material is Nd-doped yttrium vanadate Nd:YVO4, laser is wavelength 1064nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721189784.2U CN207183794U (en) | 2017-09-18 | 2017-09-18 | Short cavity sticking-type 532nm semiconductor pump lasers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721189784.2U CN207183794U (en) | 2017-09-18 | 2017-09-18 | Short cavity sticking-type 532nm semiconductor pump lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207183794U true CN207183794U (en) | 2018-04-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721189784.2U Expired - Fee Related CN207183794U (en) | 2017-09-18 | 2017-09-18 | Short cavity sticking-type 532nm semiconductor pump lasers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207183794U (en) |
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2017
- 2017-09-18 CN CN201721189784.2U patent/CN207183794U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180403 |
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| CF01 | Termination of patent right due to non-payment of annual fee |