CN207176073U - A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure - Google Patents
A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure Download PDFInfo
- Publication number
- CN207176073U CN207176073U CN201721135325.6U CN201721135325U CN207176073U CN 207176073 U CN207176073 U CN 207176073U CN 201721135325 U CN201721135325 U CN 201721135325U CN 207176073 U CN207176073 U CN 207176073U
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- Prior art keywords
- flange
- radiofrequency signal
- vapor deposition
- chemical vapor
- insulating
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- Withdrawn - After Issue
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment to introduce structure, including Double water-cooled cavity, coaxial fitting, radome, radome are arranged on the top of Double water-cooled cavity；Coaxial fitting is arranged on radome, and a welded flange is set between radome and Double water-cooled cavity；The top of welded flange sets the first insulating flange；One wiring flange is set above the first insulating flange, a centrally disposed center hole on wiring flange, a groove is opened up above it, an air inlet pipe is set；In its both sides, one brush is respectively set；It is arranged in groove；One end of brush props up the outside of air inlet pipe；The other end of brush props up the both sides of groove；Air inlet pipe sequentially passes through downwards the first insulating flange, welded flange and Double water-cooled cavity；An insulation sleeve is set between air inlet pipe and the first insulating flange, welded flange and Double water-cooled cavity；Solve the problems, such as that radiofrequency signal introduces failure.
Description
Technical field
It the utility model is related to radiofrequency signal and introduce structure, more particularly to a kind of plasma enhanced chemical vapor deposition is set
Standby radiofrequency signal introduces structure.
Background technology
The preparation method of plasma enhanced chemical vapor deposition, be made in settling chamber using glow discharge its ionize after
Semiconductor film material preparation and the preparation method of other materials film of chemical reaction deposit are carried out on substrate.Plasma increases
Extensive chemical is vapor-deposited：In chemical vapor deposition, excited gas, it is set to produce low temperature plasma, intensified response material
Chemism, so as to carry out a kind of method of extension.This method can form solid film at a lower temperature.It is such as anti-at one
Indoor matrix material should be placed on negative electrode, be passed through reacting gas and keeps certain temperature to compared with low pressure (1~600Pa), matrix,
Glow discharge is produced in some way, and nearby gas ionization, reacting gas are activated matrix surface, while matrix surface produces
Cathodic sputtering, so as to improve surface-active.On the surface not only there is common thermal chemical reaction, also there is complexity
Plasma chemical reaction.Deposition film is exactly to be formed under the collective effect of both chemical reactions.
In order under existing technical conditions, in existing plasma enhanced chemical vapor deposition (PECVD) equipment,
In order to strengthen plasma enhanced chemical vapor deposition speed, using the method for exciting glow discharge of radio-frequency drive, but
In the prior art for using radio-frequency drive excite the method for glow discharge during, often result in the process in radio-frequency drive
In because radiofrequency signal is during introducing, in the defects of structure of introducing, often result in radiofrequency signal and outside shell
The parts such as body, flange work in the state of poor sealing so that radiofrequency signal can not really reach plasma enhanced chemical
In the chamber of (PECVD) equipment that is vapor-deposited, radiofrequency signal is caused to introduce failure.
Utility model content
The purpose of this utility model is that the utility model purpose realizes one kind etc. according in place of above-mentioned the deficiencies in the prior art
The radiofrequency signal of gas ions enhancing chemical vapor depsotition equipment introduces structure, including Double water-cooled cavity, coaxial fitting, screen
Cover is covered, described radome is arranged on the top of Double water-cooled cavity；Described coaxial fitting is arranged on radome, its
It is characterised by, a welded flange is set between described radome and Double water-cooled cavity；Set in the top of welded flange
First insulating flange；One wiring flange is set above the first described insulating flange, and center is set on described wiring flange
A center hole is put, a groove is opened up above described center hole, an air inlet pipe is set in described center hole；
In described air inlet pipe both sides, one brush is respectively set；Described brush is arranged in described groove；One end of described brush
Prop up the outside of air inlet pipe；The other end of described brush props up the both sides of groove；Described air inlet pipe sequentially passes through downwards
One insulating flange, welded flange and Double water-cooled cavity；In air inlet pipe and described the first insulating flange, welded flange and bilayer
One insulation sleeve is set between water cooling cavity.
The top of wiring flange described further sets the second insulating flange.
One inlet flange further is set in the top of the second described insulating flange.
First sealing ring is further set between the second described insulating flange and inlet flange.
Further in the lower section of the second described insulating flange, the second sealing ring is set in the top of wiring flange；Connecing
The blue lower section of collimation method；3rd sealing ring is set between the first insulating flange.
Further in the lower section of the first described insulating flange；4th sealing ring is set on welded flange.
Hole is threaded on welded flange described further, is threadedly coupled with Double water-cooled cavity.
First insulating flange, wiring flange are further set respectively inside described radome, the second insulating flange, entered
Gas flange；And it is bolted and the first insulating flange, wiring flange, the second insulating flange, inlet flange is fixed on welding
On flange.
The technique effect of the utility model patent essentially consists in, and is set using above-mentioned plasma enhanced chemical vapor deposition
Standby radiofrequency signal introduces structure, solves during radiofrequency signal introduces, radiofrequency signal with the part such as flange, housing
Contact and cause the technical problem of failure.
Brief description of the drawings
Fig. 1 is overall schematic of the present utility model；
Fig. 2 is complete section schematic diagram of the present utility model；
Fig. 3 is local internal structure schematic diagram of the present utility model；
Fig. 4 is the schematic diagram of wiring flange of the present utility model；
Fig. 5 is the complete section schematic diagram of wiring flange of the present utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describe, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole realities
Apply example.Based on the embodiment in the utility model, those of ordinary skill in the art institute under the premise of creative work is not made
The every other embodiment obtained, belong to the scope of the utility model protection.
In in conjunction with the embodiments, shown in accompanying drawing 1, a kind of PECVD is disclosed in the present embodiment
The radiofrequency signal of depositing device introduces structure, including Double water-cooled cavity 1, coaxial fitting 2, radome 3, by radome 3
It is arranged on the top of Double water-cooled cavity 1；Coaxial fitting 2 is arranged on radome 3, this is that overall plasma increases
The radiofrequency signal of extensive chemical vapor deposition apparatus introduces the overall diagram of structure；
With reference to shown in accompanying drawing 2, accompanying drawing 3, accompanying drawing 4, accompanying drawing 5, it is incorporated between radome 3 and Double water-cooled cavity 1 and sets
One welded flange 4；In the top of welded flange 4, the first insulating flange 5 is set；One wiring is set above the first insulating flange 5
Flange 6, a centrally disposed center hole 61 on wiring flange 6, a groove 62 is opened up in the top of center hole 61, at center
One air inlet pipe 11 is set in circular hole 61；In the both sides of air inlet pipe 11, one brush 9 is respectively set；Brush 9 is arranged in groove 62；Brush 9
One end prop up the outside of air inlet pipe 11；The other end of brush 9 props up the both sides of groove 62；Air inlet pipe 11 sequentially passes through downwards the
One insulating flange 5, welded flange 6 and Double water-cooled cavity 1；In air inlet pipe 11 and the first insulating flange 5, welded flange 6 and double
An insulation sleeve 10 is set between layer water cooling cavity 1.Result in formation of the radio frequency of plasma enhanced chemical vapor deposition equipment letter
Number introduce the main structure of structure, solve during radiofrequency signal introduces, radiofrequency signal with the portion such as flange, housing
Part contacts and causes the technical problem of failure.Solve and be introduced directly into plasma enhanced chemical vapor deposition in radiofrequency signal and set
The structure of standby chamber.
With reference to shown in accompanying drawing 3, the top of wiring flange 6 sets the second insulating flange 7, and such structure ensures in connection
Insulation between the insulating flange 7 of orchid 6 and second, ensure that radiofrequency signal during introducing, seals up the upper of wiring flange 6
The structure such as groove 62 and brush 9.
In conjunction with shown in accompanying drawing 3, in order to further realize structure that radiofrequency signal introduces, in the upper of the second insulating flange 7
Side sets an inlet flange 8；It is connected using on inlet flange 8 with air inlet pipe 11, realizes being passed through for reacting gas.
In order to which the entirety that the radiofrequency signal ensured in plasma enhanced chemical vapor deposition equipment is introduced into structure is realized,
It is preferable to provide in embodiment, with reference to shown in accompanying drawing 3, the first sealing is set between the second insulating flange 7 and inlet flange 8
Circle 81.In the lower section of the second insulating flange 7, second sealing ring 63 is set in the top of wiring flange 6；Under wiring flange 6
Side；3rd sealing ring 64 is set between the first insulating flange 5；In the lower section of the first insulating flange 5；Set on welded flange 4
Put the 4th sealing ring 41.
Double-layer water is fixed in order to realize that the radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure
Cold cavity 1, with reference to shown in accompanying drawing 3, hole 42 is threaded on welded flange 4, is threadedly coupled with Double water-cooled cavity 1；
First insulating flange 5, wiring flange 6, the second insulating flange 7, inlet flange 8 are set respectively inside radome 3；And pass through spiral shell
Tether to connect and the first insulating flange 5, wiring flange 6, the second insulating flange 7, inlet flange 8 are fixed on welded flange 4.
As preferred embodiment of the present utility model, it is obvious to a person skilled in the art that the utility model is not
It is limited to the details of above-mentioned one exemplary embodiment, and in the case of without departing substantially from spirit or essential attributes of the present utility model, energy
It is enough to realize the utility model, and the scope of protection of the utility model in other specific forms.Which point therefore, no matter come from
See, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the utility model is by appended claims
Rather than described above limits, it is intended that all changes capsule in the implication and scope of the equivalency of claim will be fallen
Include in the utility model.Any reference in claim should not be considered as to the involved claim of limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It is appreciated that other embodiment.
Claims (8)
1. the radiofrequency signal of plasma enhanced chemical vapor deposition equipment a kind of introduces structure, including it is Double water-cooled cavity, same
Shaft cable joint, radome, described radome are arranged on the top of Double water-cooled cavity；Described coaxial fitting is set
On radome, it is characterised in that a welded flange is set between described radome and Double water-cooled cavity；In welding
Blue top sets the first insulating flange；One wiring flange is set above the first described insulating flange, in described wiring
A centrally disposed center hole, opens up a groove above described center hole on flange, in described center hole
One air inlet pipe is set；In described air inlet pipe both sides, one brush is respectively set；Described brush is arranged in described groove；It is described
One end of brush prop up the outside of air inlet pipe；The other end of described brush props up the both sides of groove；Described air inlet pipe to
Under sequentially pass through the first insulating flange, welded flange and Double water-cooled cavity；In air inlet pipe and the first described insulating flange, weldering
One insulation sleeve is set between acting flange and Double water-cooled cavity.
2. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 1 introduces structure, its
It is characterised by, the top of described wiring flange sets the second insulating flange.
3. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 2 introduces structure, its
It is characterised by, one inlet flange is set in the top of the second described insulating flange.
4. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 3 introduces structure, its
It is characterised by, the first sealing ring is set between the second described insulating flange and inlet flange.
5. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 4 introduces structure, its
It is characterised by, in the lower section of the second described insulating flange, the second sealing ring is set in the top of wiring flange；In wiring flange
Lower section；3rd sealing ring is set between the first insulating flange.
6. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 5 introduces structure, its
It is characterised by, in the lower section of the first described insulating flange；4th sealing ring is set on welded flange.
7. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 1 introduces structure, institute
Hole is threaded on the welded flange stated, is threadedly coupled with Double water-cooled cavity.
8. a kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment as claimed in claim 1 introduces structure,
First insulating flange, wiring flange, the second insulating flange, inlet flange are set respectively inside described radome；And pass through spiral shell
Tether to connect and the first insulating flange, wiring flange, the second insulating flange, inlet flange are fixed on welded flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721135325.6U CN207176073U (en) | 2017-09-06 | 2017-09-06 | A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721135325.6U CN207176073U (en) | 2017-09-06 | 2017-09-06 | A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207176073U true CN207176073U (en) | 2018-04-03 |
Family
ID=61742871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721135325.6U Withdrawn - After Issue CN207176073U (en) | 2017-09-06 | 2017-09-06 | A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207176073U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326344A (en) * | 2017-09-06 | 2017-11-07 | 上海福宜真空设备有限公司 | A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure |
-
2017
- 2017-09-06 CN CN201721135325.6U patent/CN207176073U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326344A (en) * | 2017-09-06 | 2017-11-07 | 上海福宜真空设备有限公司 | A kind of radiofrequency signal of plasma enhanced chemical vapor deposition equipment introduces structure |
| CN107326344B (en) * | 2017-09-06 | 2023-06-23 | 上海福宜真空设备有限公司 | Radio frequency signal introducing structure of plasma enhanced chemical vapor deposition equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180403 Effective date of abandoning: 20230623 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180403 Effective date of abandoning: 20230623 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |