CN109055917B - Single-chamber double-sided coating plasma chemical vapor deposition system - Google Patents
Single-chamber double-sided coating plasma chemical vapor deposition system Download PDFInfo
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- CN109055917B CN109055917B CN201811045206.0A CN201811045206A CN109055917B CN 109055917 B CN109055917 B CN 109055917B CN 201811045206 A CN201811045206 A CN 201811045206A CN 109055917 B CN109055917 B CN 109055917B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
The invention discloses a single-chamber double-sided coating plasma chemical vapor deposition system, which is characterized in that an electrode switching device is additionally arranged outside a chamber of a traditional deposition system, and four contact heads, namely an upper electrode contact head, a radio frequency power line contact head, a lower electrode contact head and a grounding contact head, are arranged in the switching device; according to the invention, the communication relation between different contact heads is adjusted in the film coating process, so that double-sided film coating of a sample can be realized under the condition of no sheet turning, the sample is always in a stable environment during film coating, the problem of poor device performance caused by sample taking is solved, the process stability is improved, and the equipment cost is reduced.
Description
[ technical field ] A method for producing a semiconductor device
The invention belongs to the field of semiconductor photoelectronic device manufacturing, and relates to a single-chamber double-sided coating plasma chemical vapor deposition system.
[ background of the invention ]
The plasma chemical vapor deposition (PECVD) system decomposes reaction gas by plasma glow discharge, generates reactive excimer which deposits on the surface of a sample, and performs chemical reaction on the surface of the sample to obtain uniform and consistent functional thin film materials, wherein common materials include thin film materials such as silicon oxide, silicon nitride, silicon carbide, amorphous silicon and the like. PECVD equipment is widely used in semiconductor, photovoltaic and photoelectronic industries and is the core equipment of the industries. Referring to fig. 1, a conventional PECVD apparatus includes a core plasma reaction chamber including an upper electrode connected to a radio frequency power source, a lower electrode having one end grounded, a gas inlet, and a substrate holder; the PECVD equipment also comprises a vacuum measuring system, a butterfly valve stabilizing system, a heating system, a vacuum obtaining system, a sample transmission unit and the like, wherein a sample to be deposited is placed on a sample rack, after a certain proportion of reaction gas is introduced into the chamber, the pressure of the chamber is adjusted through the butterfly valve, and then a functional film is prepared through glow discharge of an upper electrode radio frequency electrode, the deposition direction of the film is single and fixed, and only one side (upper surface) of the sample can be coated in a single chamber. Along with the development requirement of a coating process, some samples need to be coated on the upper surface and the lower surface of the samples, at the moment, the samples need to be turned over by adopting the traditional PECVD equipment, the samples need to be moved out of a deposition reaction chamber in the step, and the turning is carried out after the vacuum is broken, so that the surface pollution of the samples is easily caused, and the stability of the process is influenced. Especially for devices with sensitive interface states, the device performance is easy to deteriorate and even be discarded. For example, in the current photovoltaic field, a crystalline silicon heterojunction cell is a bifacial cell, and the main structure of the cell is as follows: the cell structure comprises four layers of thin films, two layers on each surface, and a boron-doped amorphous silicon/amorphous silicon intrinsic layer/N-type crystalline silicon/amorphous silicon intrinsic layer/phosphorus-doped amorphous silicon layer, wherein the intrinsic amorphous silicon is a surface passivation film. The battery structure has high requirements on a PECVD process, and mainly ensures that the surface of the cleaned N-type silicon wafer cannot be polluted or oxidized, so that the cleaned N-type silicon wafer is required to finish the deposition of an amorphous silicon passivation film as soon as possible. At the moment, the traditional PECVD equipment has limitations, if the deposition of four layers of films is to be completed, the silicon wafer needs to be turned over for many times or deposition chambers are added, so that the cost and the complexity of the process are improved, and the development of the type of battery industry is not facilitated. At present, the photovoltaic industry in China develops rapidly, and crystalline silicon products occupy more than 90% of market share in the photovoltaic market. However, the power generation cost of the crystalline silicon battery is still higher than that of thermal power, the crystalline silicon battery needs to be developed by national subsidies, and the production cost of the solar battery needs to be further reduced in order to finally realize the flat price grid connection of photovoltaic power generation. The equipment cost occupies a large proportion of the whole production cost of the solar cell, wherein the PECVD equipment is the core equipment of the photovoltaic industry. At present, the high-end PECVD equipment in China basically depends on import and is expensive, how to reduce the cost of the PECVD equipment and how to reduce the complexity of the process is the key for reducing the production cost of solar cells and improving the market competitiveness of the high-end PECVD equipment in China.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provide the PECVD system, which realizes the double-sided coating deposition of a sample under the condition that the sample is not turned over, reduces the equipment cost and the production cost and improves the stability of the product process.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a single-chamber double-sided coating plasma chemical vapor deposition system comprises a chamber and an electrode switching device; the upper part in the cavity is provided with an upper electrode penetrating through the upper surface of the cavity, and the lower part in the cavity is provided with a lower electrode penetrating through the lower surface of the cavity; an upper electrode contact head, a radio frequency power line contact head, a lower electrode contact head and a grounding contact head are arranged in the electrode switching device; the upper electrode contact is communicated with the upper electrode, and the lower electrode contact is connected with the lower electrode; the radio frequency power line contact is communicated with a radio frequency power supply, and the grounding contact is grounded;
in the process of coating a deposited sample in the chamber, when an upper electrode contact in the electrode switching device is communicated with a radio frequency power line contact, a lower electrode contact is communicated with a grounding contact, and the upper surface of the deposited sample is coated; when a lower electrode contact head in the electrode switching device is communicated with a radio frequency power line contact head, an upper electrode contact head is communicated with a grounding contact head, and the lower surface of the sample is deposited with a film.
The invention is further improved in that:
preferably, the upper electrode and the upper electrode contact are communicated through a radio frequency line; the lower electrode is communicated with the lower electrode contact head through a radio frequency line.
Preferably, the upper electrode contact, the radio frequency power line contact, the lower electrode contact and the grounding contact are all made of conductive materials.
Preferably, the conductive material is copper, silver or gold.
Preferably, the upper electrode contact, the radio frequency power line contact, the lower electrode contact and the grounding contact are communicated through a male-female plug structure.
Preferably, the upper electrode contact and the lower electrode contact are fixedly provided with male head structures; the radio frequency power line contact and the grounding contact are fixedly provided with female head structures.
Preferably, the male and female plugs are communicated manually.
Preferably, the upper electrode and the lower electrode are symmetrical structures, and the structures and materials of the electrodes are the same.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a single-chamber double-sided coating plasma chemical vapor deposition system, which is characterized in that an electrode switching device is additionally arranged outside a chamber of a traditional deposition system, and four contact heads, namely an upper electrode contact head, a radio frequency power line contact head, a lower electrode contact head and a grounding contact head, are arranged in the switching device; according to the invention, the communication relation between different contact heads is adjusted in the film coating process, so that double-sided film coating of a sample can be realized under the condition of no sheet turning, the sample is always in a stable environment during film coating, the problem of poor device performance caused by sample taking is solved, the stability of the process is improved, and the use cost of equipment is reduced due to the reduction of steps.
Furthermore, the electrode is connected with the electrode contact head through the radio frequency wire, so that the medium for transmitting radio frequency current stably transmits current.
Furthermore, each contact in the electrode switching device is made of a conductive material, so that the transmission of radio frequency current is ensured.
Furthermore, the upper electrode and the lower electrode of the invention are communicated with the radio frequency power line contact or the grounding contact through a male plug and a female plug; the communication mode is convenient and firm to communicate, and transmission power is stable during connection.
Furthermore, the control mode of the communication of the male plug and the female plug is set to be a manual mode, so that the cost is low, and the control is easy.
Furthermore, the upper electrode and the lower electrode are of symmetrical structures, and the structures and the materials of the electrodes are the same, so that when the upper electrode contact is contacted with the radio frequency power supply contact and the lower electrode contact is contacted with the grounding contact, the upper electrode becomes a radio frequency electrode and the lower electrode becomes a grounding electrode; when the upper electrode contact head is contacted with the grounding contact head and the lower electrode contact head is contacted with the radio frequency power supply contact head, the upper electrode is a grounding electrode and the lower electrode is a radio frequency electrode; the switching of the electrodes is realized.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a conventional PECVD chamber structure;
FIG. 2 is a schematic structural view of a PECVD chamber of the present invention;
FIG. 3 is a schematic diagram of a PECVD upper electrode as a radio frequency electrode and a lower electrode grounded in accordance with the present invention;
FIG. 4 is a schematic diagram of a PECVD lower electrode as a radio frequency electrode and an upper electrode grounded in accordance with the present invention;
wherein: 2-1 is an upper electrode; 2-2 is a lower electrode; 2-3 are deposition samples; 2-4 is a sample frame; 2-5 are chambers; 2-6 are radio frequency lines; 2-7 are electrode switching devices; 2-8 are radio frequency power supplies; 2-9 is ground; 2-10 is an upper electrode contact; 2-11 are radio frequency power line contacts; 2-12 are lower electrode contacts; 2-13 are grounding contact heads; 2-14 are reaction gas inlets; 2-15 are air outlets; 3-16 are plasma discharge glow areas.
[ detailed description ] embodiments
The invention is described in further detail below with reference to the accompanying drawings:
referring to FIG. 2, a schematic diagram of a PECVD chamber structure of the present invention is shown, wherein the system comprises a chamber 2-5 and an electrode switching device 2-7; an upper electrode 2-1 penetrating through the upper surface is arranged at the upper part in the chamber 2-5, a lower electrode 2-2 penetrating through the lower surface is arranged at the lower part in the chamber 2-5, a sample rack 2-4 is fixedly arranged in the chamber 2-5, and a reaction gas inlet 2-14 and a gas outlet 2-15 are arranged in the chamber 2-5; during film coating, other gases such as hydrogen and the like are introduced into the chamber 2-5, and the deposition sample 2-3 is placed on the sample rack 2-4; the upper electrode 2-1 and the lower electrode 2-2 are consistent in material and structure design.
An upper electrode contact 2-10, a radio frequency power line contact 2-11, a lower electrode contact 2-12 and a grounding contact 2-13 are arranged in the electrode switching device 2-7; the upper electrode contact 2-10 is connected with the upper electrode 2-1 through a radio frequency wire 2-6, and the lower electrode contact 2-12 is connected with the lower electrode 2-2 through a radio frequency wire 2-6; the radio frequency power line contact 2-11 is connected with the radio frequency power supply 2-8, and the grounding contact 2-13 is grounded 2-9; all contacts in the electrode switching devices 2-7 are of a conductive material; the conductive material is selected from copper, silver or gold.
When the upper electrode contact 2-10 is communicated with the radio frequency power line contact 2-11 or the grounding contact 2-13, the upper electrode contact is communicated with the grounding contact through a male plug and a female plug; when the lower electrode contact 2-12 is communicated with the radio frequency power line contact 2-11 or the grounding contact 2-13, the lower electrode contact is communicated with the grounding contact through a male plug and a female plug. Wherein, the upper electrode contact 2-10 and the lower electrode contact 2-12 are fixedly provided with male head structures; the radio frequency power line contact heads 2-11 and the grounding contact heads 2-13 are fixedly provided with female head structures, and the electrode switching device 2-7 is a closed metal box to prevent electromagnetic leakage. The male plug and the female plug are communicated in a manual mode.
The working process of the invention is as follows:
referring to fig. 3, when the upper electrode contact is connected with the radio frequency power supply contact, the lower electrode contact is connected with the ground contact, the upper electrode 2-1 serves as a radio frequency electrode and the lower electrode 2-2 serves as a ground electrode, and the plasma glow area 3-16 is located between the upper electrode 2-1 and the deposition sample 2-3, so that the upper surface coating of the deposition sample 2-3 can be realized;
referring to fig. 4, when the upper electrode contact is connected to the ground contact and the lower electrode contact is connected to the rf power contact, the upper electrode 2-1 serves as a ground electrode and the lower electrode 2-2 serves as an rf electrode, and the plasma glow area 3-16 is located between the deposited sample 2-3 and the lower electrode, so that the lower surface of the deposited sample 2-3 can be coated.
The working principle is as follows:
the two counter electrodes in the PECVD chamber are symmetrically designed and are insulated from the vacuum chamber. Radio frequency wires are led out from the two electrodes and connected to a newly designed switching device, and a contact of the switching switch can be connected with two positions, namely a radio frequency power wire, so that the electrodes can be changed into radio frequency electrodes to provide radio frequency power feed-in; the other position is connected to ground, so that the electrode becomes a ground electrode. While the counter electrode also maintains the same structure and material design. Therefore, the radio-frequency electrode can be switched into the grounding electrode through the external switching device, and the grounding electrode can also be switched into the radio-frequency electrode, so that double-sided coating of the sample can be realized under the condition that the sample is not turned over.
The invention has the advantages that: the electrode is connected with the switching device, so that the electrode can be used as a radio frequency electrode and a grounding electrode, double-sided coating deposition of a sample is realized under the condition that the sample is not turned over, the cost of equipment is reduced, and the stability of a film deposition process is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A single-chamber double-sided coating plasma chemical vapor deposition system is characterized by comprising a chamber (2-5) and an electrode switching device (2-7); an upper electrode (2-1) penetrating through the upper surface of the chamber (2-5) is arranged at the upper part in the chamber (2-5), and a lower electrode (2-2) penetrating through the lower surface of the chamber (2-5) is arranged at the lower part in the chamber (2-5); an upper electrode contact head (2-10), a radio frequency power line contact head (2-11), a lower electrode contact head (2-12) and a grounding contact head (2-13) are arranged in the electrode switching device (2-7); the upper electrode contact head (2-10) is communicated with the upper electrode (2-1), and the lower electrode contact head (2-12) is connected with the lower electrode (2-2); the radio frequency power line contact heads (2-11) are communicated with a radio frequency power supply (2-8), and the grounding contact heads (2-13) are grounded (2-9);
in the process of coating a deposited sample (2-3) in the chamber (2-5), when an upper electrode contact (2-10) in the electrode switching device (2-7) is communicated with a radio frequency power line contact (2-11), a lower electrode contact (2-12) is communicated with a grounding contact (2-13), and the upper surface of the deposited sample (2-3) is coated; when a lower electrode contact head (2-12) in the electrode switching device (2-7) is communicated with a radio frequency power line contact head (2-11), an upper electrode contact head (2-10) is communicated with a grounding contact head (2-13), and the lower surface of a sample (2-3) is deposited with a coating film;
the upper electrode (2-1) is communicated with the upper electrode contact head (2-10) through a radio frequency wire (2-6); the lower electrode (2-2) is communicated with the lower electrode contact head (2-12) through a radio frequency wire (2-6);
the upper electrode contact (2-10), the radio frequency power line contact (2-11), the lower electrode contact (2-12) and the grounding contact (2-13) are communicated through a male-female plug structure.
2. A single-chamber double-sided coated plasma chemical vapor deposition system as claimed in claim 1, wherein the upper electrode contact (2-10), the rf power line contact (2-11), the lower electrode contact (2-12) and the ground contact (2-13) are all made of conductive material.
3. A single-chamber double-sided coated plasma chemical vapor deposition system as claimed in claim 2, wherein the conductive material is selected from copper, silver or gold.
4. A single-chamber double-sided coating plasma chemical vapor deposition system according to claim 1, wherein the upper electrode contact head (2-10) and the lower electrode contact head (2-12) are fixedly provided with male structures; the radio frequency power line contact (2-11) and the grounding contact (2-13) are fixedly provided with female head structures.
5. A single-chamber double-sided coated plasma chemical vapor deposition system as claimed in claim 1, wherein the male and female plugs are manually connected.
6. A single-chamber double-sided coating plasma chemical vapor deposition system according to any of claims 1 to 5, characterized in that the upper electrode (2-1) and the lower electrode (2-2) are of symmetrical structure, and the structure and material of the electrodes are the same.
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| CN110402007B (en) * | 2019-07-31 | 2021-10-01 | 北京交通大学 | Material surface treatment device based on air glow discharge plasma |
| US11898248B2 (en) | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
| CN111218674B (en) * | 2020-03-09 | 2024-09-17 | 龙鳞(深圳)新材料科技有限公司 | PECVD radio frequency feed-in electrode system and PECVD device |
| CN113445029A (en) * | 2020-03-25 | 2021-09-28 | 拓荆科技股份有限公司 | Double-sided deposition apparatus and method |
| CN114000126A (en) * | 2021-10-29 | 2022-02-01 | 龙鳞(深圳)新材料科技有限公司 | Chemical vapor deposition waterproof coating device |
| CN114289413A (en) * | 2022-01-04 | 2022-04-08 | 深圳市普拉斯玛自动化设备有限公司 | Program control electrode polarity changing device for vacuum plasma cleaning machine |
| CN116024554A (en) * | 2022-11-11 | 2023-04-28 | 陕西隆基乐叶光伏科技有限公司 | Double-sided film plating method and tubular PECVD equipment |
| CN116387411A (en) * | 2023-04-12 | 2023-07-04 | 苏州迈为科技股份有限公司 | Large-area double-frequency heterojunction solar cell film deposition method and equipment |
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| DE112011105584T5 (en) * | 2011-08-30 | 2014-06-26 | Mitsubishi Electric Corp. | Plasma deposition apparatus and plasma deposition method |
| AT513190B9 (en) * | 2012-08-08 | 2014-05-15 | Berndorf Hueck Band Und Pressblechtechnik Gmbh | Apparatus and method for plasma coating a substrate, in particular a press plate |
| JP6356516B2 (en) * | 2014-07-22 | 2018-07-11 | 東芝メモリ株式会社 | Plasma processing apparatus and plasma processing method |
| CN106756886B (en) * | 2016-12-27 | 2019-05-14 | 中国科学院微电子研究所 | Control method of variable electric field atomic layer deposition system |
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