CN206947354U - GaNHEMT tube core structures on High resistivity substrate - Google Patents
GaNHEMT tube core structures on High resistivity substrate Download PDFInfo
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- CN206947354U CN206947354U CN201720594509.2U CN201720594509U CN206947354U CN 206947354 U CN206947354 U CN 206947354U CN 201720594509 U CN201720594509 U CN 201720594509U CN 206947354 U CN206947354 U CN 206947354U
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Abstract
The utility model discloses the GaN HEMT tube core structures on a kind of High resistivity substrate, it is related to GaN HEMT device technical field of structures, from bottom to top including ground plane, substrate, channel layer, barrier layer, dielectric, table top, fill area, grid, source electrode and drain electrode；Grid and drain electrode are below dielectric, barrier layer and channel layer immediately below grid and drain electrode to form fill area by emptying, filling gold in fill area, ground plane is gold, and the barrier layer and channel layer of grid and drain electrode underface to form fill area by emptying, be subsequently filled gold, because gold utensil has good electric conductivity, therefore the parasitic conductance between grid and drain electrode over the ground reduces, and so as to reduce loss of the radiofrequency signal on substrate, improves the radio-frequency performance of device.
Description
Technical field
GaN HEMT device technical field of structures is the utility model is related to, more particularly to the GaN on a kind of High resistivity substrate
HEMT tube core structures.
Background technology
GaN HEMT devices have the advantages that power density is high, power added efficiency is high and applies bandwidth, in radio frequency
The great application prospect in field.
At present, the substrate that commercial GaN HEMT tube cores use is mainly semi-insulation SiC substrate.Semi-insulation SiC substrate has
The advantages of small, perfect heat-dissipating is adapted to GaN lattices.It is also a kind of good frequency microwave material simultaneously.
Research finds some High resistivity substrates as prepared GaN HEMT tube cores on high resistant SiC and can reduce GaN HEMT tube cores
Cost.But High resistivity substrate is not good RF Materials, the grid PAD and drain electrode PAD that High resistivity substrate adds tube core are arrived
Parasitic conductance between ground.Cause the radio-frequency performance of GaN HEMT devices on High resistivity substrate than GaN on semi-insulation SiC substrate
HEMT is poor.
Utility model content
The technical problems to be solved in the utility model is to be directed to above-mentioned the deficiencies in the prior art, there is provided on a kind of High resistivity substrate
GaN HEMT tube core structures, solve the problems, such as the radio-frequency performance difference of GaN HEMT devices, have reduce radiofrequency signal in substrate
On loss, improve device radio-frequency performance the characteristics of.
In order to solve the above technical problems, technical solution adopted in the utility model is：A kind of GaN on High resistivity substrate
HEMT tube core structures, it is characterised in that：From bottom to top include ground plane, substrate, channel layer, barrier layer, dielectric, table top,
Fill area, grid, source electrode and drain electrode；Grid and drain electrode are dielectric, grid and the barrier layer and ditch immediately below drain electrode below
Channel layer is emptied to form fill area, and filling gold in fill area, ground plane is gold.
Preferably, grid includes gate metal and grid PAD, and gate metal is connected with grid PAD by strip metal；Institute
Stating drain electrode includes drain metal and alloy and drain electrode PAD, and drain metal and alloy are connected with drain electrode PAD by strip metal；Source
Pole includes source metal and alloy and source electrode PAD, source metal and alloy are connected with source electrode PAD by strip metal.
Preferably, drain metal and alloy and table top pass through high-temperature quick thermal annealing or n+GaN regrowth process is formed
Ohmic contact；Source metal and alloy and table top pass through high-temperature quick thermal annealing or n+GaN regrowth process forms ohm and connect
Touch；Gate metal and table top directly contact form Schottky contacts.
Preferably, table top is formed by the way of ion implanting or etching, and land depth is no less than 30nm.
Preferably, substrate is high resistant SiC, high resistant Si or high resistant GaN.
Preferably, channel layer is the GaN that Fe is adulterated or C is adulterated.
Preferably, barrier layer AlxGa1-xN, wherein 0.05<x<1.
Preferably, dielectric is silica, hafnium oxide, silicon nitride, aluminium nitride, aluminum oxide and the group between them
Close, thickness 100nm-5000nm.
It is using beneficial effect caused by above-mentioned technical proposal：The utility model is by designing on High resistivity substrate
Barrier layer and channel layer immediately below GaN HEMT tube core structures, grid and drain electrode to form fill area by emptying, and are subsequently filled gold,
Because gold utensil has good electric conductivity, therefore the parasitic conductance between grid and drain electrode over the ground reduces, so as to reduce radio frequency letter
Loss number on substrate, improve the radio-frequency performance of device.
Brief description of the drawings
Fig. 1 is the utility model overall structure side view.
Fig. 2 is the utility model overall structure top view.
In figure：1st, ground plane；2nd, substrate；3rd, channel layer；4th, barrier layer；5th, dielectric；6th, grid；7th, source electrode；8th, leak
Pole；9th, table top；10th, drain PAD；11st, source electrode PAD；12nd, grid PAD；13rd, drain metal and alloy；14th, source metal and conjunction
Gold；15th, gate metal；16th, strip metal；17th, fill area.
Embodiment
The utility model is described in further detail with reference to the accompanying drawings and detailed description.
As shown in figure 1, it is the utility model overall structure side view, from bottom to top including ground plane 1, substrate 2, channel layer
3rd, barrier layer 4, dielectric 5, table top 9, fill area 17, grid 7, source electrode 7 and drain electrode 8；Grid 7 and drain electrode 8 are below insulation
Barrier layer 4 and channel layer 3 immediately below medium 5, grid 7 and drain electrode 8 are emptied to form fill area 17, are filled in fill area 17
Gold, ground plane 1 are gold.
Substrate 2 is high resistant SiC, high resistant Si or high resistant GaN.
Channel layer 3 is the GaN that Fe is adulterated or C is adulterated, and barrier layer 4 is AlxGa1-xN, wherein 0.05<x<1, the He of channel layer 3
Barrier layer 4 forms the main body of GaN HEMT-structures.
Dielectric 5 is silica, hafnium oxide, silicon nitride, aluminium nitride, aluminum oxide and the combination between them, thickness
For 100nm-5000nm.
Table top 9 is formed by the way of ion implanting or etching, and the depth of table top 9 is no less than 30nm.
Ground plane 1 is connected with fill area 17, and ground plane 1 and shell sintering can also be played a part of into ground connection.
Due to the presence of fill area 17, make grid PAD12 and the PAD10 that drains reduce relative to the parasitic conductance between ground,
So as to which the parasitic drain on substrate 2 reduces, the radio-frequency performance of device is improved.
As shown in Fig. 2 being utility model overall structure top view, grid 7 includes gate metal 15 and grid PAD12, grid
Pole metal 15 and grid PAD12 are connected by strip metal 16；Drain electrode 8 includes drain metal and alloy 13 and drain electrode PAD10, leakage
Pole metal and alloy 13 and drain electrode PAD10 are connected by strip metal 16；Source electrode 7 includes source metal and alloy 14 and source electrode
PAD11, source metal and alloy 14 and source electrode PAD11 are connected by strip metal 16, and PAD roles in tube core are to visit
Pin provides the bonding point during pressure point and offer circuits assembly.
Drain metal and alloy 13 and table top 9 pass through high-temperature quick thermal annealing or n+GaN regrowth process forms ohm
Contact；Source metal and alloy 14 and table top 9 pass through high-temperature quick thermal annealing or n+GaN regrowth process forms ohm and connect
Touch；Gate metal 15 and the directly contact of table top 9 form Schottky contacts.Grid can be regulated and controled by changing the upper voltage of gate metal 15
The carrier concentration of pole 7 times, so as to realize the regulation and control to device.
After adopting the above technical scheme, by by the grid 7 in the GaN HEMT tube core structures on High resistivity substrate and drain electrode 8
The barrier layer 4 and channel layer 3 of underface are drawn to form fill area 17, are subsequently filled as gold, because gold utensil has good electric conductivity,
Therefore the parasitic conductance between grid 7 and drain electrode 8 over the ground reduces, and so as to reduce the loss of radiofrequency signal on the substrate 2, improves
The radio-frequency performance of device.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
All any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (8)
- A kind of 1. GaN HEMT tube core structures on High resistivity substrate, it is characterised in that：Include ground plane from bottom to top（1）, substrate （2）, channel layer（3）, barrier layer（4）, dielectric（5）, table top（9）, fill area（17）, grid（6）, source electrode（7）And drain electrode （8）；Grid（6）And drain electrode（8）It is dielectric below（5）, grid（6）And drain electrode（8）The barrier layer of underface（4）And raceway groove Layer（3）Fill area is formed by emptying（17）, fill area（17）Interior filling gold, ground plane（1）For gold.
- 2. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The grid（6） Including gate metal（15）With grid PAD（12）, gate metal（15）With grid PAD（12）Pass through strip metal（16）Connection； The drain electrode（8）Including drain metal and alloy（13）With drain electrode PAD（10）, drain metal and alloy（13）With drain electrode PAD （10）Pass through strip metal（16）Connection；Source electrode（7）Including source metal and alloy（14）With source electrode PAD（11）, source metal And alloy（14）With source electrode PAD（11）Pass through strip metal（16）Connection.
- 3. the GaN HEMT tube core structures on High resistivity substrate according to claim 2, it is characterised in that：The drain metal And alloy（13）And table top（9）Pass through high-temperature quick thermal annealing or n+GaN regrowth process forms Ohmic contact；Source metal And alloy（14）And table top（9）Pass through high-temperature quick thermal annealing or n+GaN regrowth process forms Ohmic contact；Gate metal （15）And table top（9）Directly contact forms Schottky contacts.
- 4. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The table top（9） Formed by the way of ion implanting or etching, table top（9）Depth is no less than 30nm.
- 5. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The substrate（2） For high resistant SiC, high resistant Si or high resistant GaN.
- 6. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The channel layer （3）For the GaN of Fe doping or C doping.
- 7. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The barrier layer （4）For AlxGa1-xN, wherein 0.05<x<1.
- 8. the GaN HEMT tube core structures on High resistivity substrate according to claim 1, it is characterised in that：The dielectric （5）For silica, hafnium oxide, silicon nitride, aluminium nitride, aluminum oxide and the combination between them, thickness 100nm-5000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720594509.2U CN206947354U (en) | 2017-05-25 | 2017-05-25 | GaNHEMT tube core structures on High resistivity substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720594509.2U CN206947354U (en) | 2017-05-25 | 2017-05-25 | GaNHEMT tube core structures on High resistivity substrate |
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| Publication Number | Publication Date |
|---|---|
| CN206947354U true CN206947354U (en) | 2018-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720594509.2U Withdrawn - After Issue CN206947354U (en) | 2017-05-25 | 2017-05-25 | GaNHEMT tube core structures on High resistivity substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104142A (en) * | 2017-05-25 | 2017-08-29 | 中国电子科技集团公司第十三研究所 | GaNHEMT tube core structures on High resistivity substrate |
-
2017
- 2017-05-25 CN CN201720594509.2U patent/CN206947354U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104142A (en) * | 2017-05-25 | 2017-08-29 | 中国电子科技集团公司第十三研究所 | GaNHEMT tube core structures on High resistivity substrate |
| CN107104142B (en) * | 2017-05-25 | 2023-06-13 | 中国电子科技集团公司第十三研究所 | GaNHEMT die structure on high resistance substrate |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180130 Effective date of abandoning: 20230613 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20180130 Effective date of abandoning: 20230613 |