CN206929725U - Wavelength converter and laser fluorescence conversion hysteria light source - Google Patents
Wavelength converter and laser fluorescence conversion hysteria light source Download PDFInfo
- Publication number
- CN206929725U CN206929725U CN201720524993.1U CN201720524993U CN206929725U CN 206929725 U CN206929725 U CN 206929725U CN 201720524993 U CN201720524993 U CN 201720524993U CN 206929725 U CN206929725 U CN 206929725U
- Authority
- CN
- China
- Prior art keywords
- wavelength converter
- adhesive linkage
- layer
- reflecting layer
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The utility model discloses a kind of Wavelength converter and laser fluorescence conversion hysteria light source.The Wavelength converter includes substrate layer (4), argentum reflecting layer (2) and the fluorescence coating (1) stacked gradually, and the argentum reflecting layer (2) is used for the light beam for reflecting the outgoing from the fluorescence coating (1).Wherein, the substrate layer (4) is aluminium nitride substrate, and the Wavelength converter also includes：Adhesive linkage (3), the adhesive linkage (3) is arranged between the substrate layer (4) and the argentum reflecting layer (2), and the adhesive linkage (3) is bonded to the substrate layer (4) and the argentum reflecting layer (2) securely.The laser fluorescence conversion hysteria light source includes above-mentioned Wavelength converter and the laser aid as incident light source.According to the utility model, higher reflectivity, thermal conductivity and long-time stability can be realized.
Description
Technical field
Laser fluorescence conversion hysteria light source is the utility model is related to, particularly Wavelength converter.
Background technology
As develop in current various LASER Light Sources it is very fast, using a kind of wider LASER Light Source, laser fluorescence conversion hysteria
Light source includes laser, Wavelength converter and output end, wherein, generally by stack gradually substrate layer, reflecting layer and luminous
The Wavelength converter of layer (following, to be referred to as " three level stack structure ") composition produces the color of needs under the exciting of laser
Light, and exported via output end.As can be seen that Wavelength converter is the critical component of laser fluorescence conversion hysteria light source, its
The height of performance directly determines the quality of laser fluorescence conversion hysteria light source.However, with the raising of laser power, for wavelength
The requirement of the performances such as the reflectivity of conversion equipment, thermal conductivity, stability also improves constantly.When the laser that high power laser is sent
During illumination wavelength conversion equipment, the temperature of Wavelength converter raises quickly and heat increases sharply, it is therefore desirable to its have compared with
High reflectivity, thermal conductivity, stability etc..
Mainly there are two types in reflecting layer in current Wavelength converter：One kind is to use white scattering particles and glass
The diffusing reflection layer that glass powder mixed sintering is formed；Another kind is using compact metal (for example, silver, aluminium) reflecting layer.Diffusing reflection layer is complete
Portion is sintered by inorganic material and formed, and heat resistance is higher, but the thermal conductivity of the scattering particles and glass dust as its composition material
It is relatively low, and in order to ensure higher reflectivity, the sintering structure of diffusing reflection layer is typically loose structure, and thermal resistance is higher, so as to
It is unfavorable for the raising of reliability and luminosity of the Wavelength converter under the exciting of the laser that superpower laser is sent.Though
So thermal resistance can be reduced by the way that the thickness of diffusing reflection layer is thinned, but this can reduce its reflectivity again.Therefore, diffusing reflection layer exists
It can not ensure that there is higher reflectivity, thermal conductivity, stability simultaneously in principle.Compact metal reflecting layer is by metal paste, glass
Glass powder and organic carrier mixed sintering are formed, it is possible to achieve higher reflectivity and thermal resistance is relatively low.Such compact metal reflection
The raw metal generally use aluminium or silver of layer.Because reflectivity of the silver in visible light wave range is far above aluminium, thus argentum reflecting layer is
Preferably.
In addition, aluminium nitride ceramics turns into the active material of heat-conducting substrate layer in recent years.It has good mechanical performance, resists
Folding intensity is higher than aluminium oxide ceramics.It also has high thermal conductivity, is more than 5 times of aluminium oxide ceramics.But with regard to heat-conducting effect
Speech, aluminium nitride substrate is the optimal heat-conducting substrate in addition to metal.In addition, aluminium nitride ceramics also has high-temperature stability so that
Aluminium nitride substrate has very high heat endurance.However, when aluminium nitride substrate forms as substrate layer and above-mentioned argentum reflecting layer
During stacked structure, because silver is poor with the sintering adhesive force of aluminium nitride substrate, the phenomenon of stripping occurs in actual use, leads
Product reliability is caused to reduce.Although it can be carried in the sintering method of aluminium nitride substrate by using glass dust and silver powder mixed sintering
The adhesive force of high argentum reflecting layer, but this argentum reflecting layer is due to containing glass structure so that and reflectivity does not reach fine silver reflection
Effect and thermal resistance is higher, heat-conducting effect is poor.
Utility model content
The purpose of this utility model is to propose that a kind of wavelength with higher reflectivity, thermal conductivity and long-term reliability turns
Changing device and the laser fluorescence conversion hysteria light source containing the Wavelength converter.
According to embodiment of the present utility model, there is provided a kind of Wavelength converter.The Wavelength converter include according to
Substrate layer, argentum reflecting layer and the fluorescence coating of secondary stacking, the argentum reflecting layer are used to reflect the light beam being emitted from the fluorescence coating.
Wherein, the substrate layer is aluminium nitride substrate, and the Wavelength converter also includes adhesive linkage, and the adhesive linkage is arranged on
Between the substrate layer and the argentum reflecting layer, and the adhesive linkage is bonded to the substrate layer and the silver reflection securely
Layer.
Preferably, the fluorescence coating wraps up upper surface and the side wall of the argentum reflecting layer so that the argentum reflecting layer is by institute
State fluorescence coating and adhesive linkage sealing.
The adhesive linkage can be glass adhesive linkage.The thickness of the glass adhesive linkage is 0.01~30 μm.For being formed
The thermal coefficient of expansion of the glass dust of the glass adhesive linkage is 0.6 × 10-6/ K~8.6 × 10-6/K.In addition, the glass dust
Glass softening point temperature is preferable higher than 900 DEG C.
The adhesive linkage can be alumina layer.The thickness of the alumina layer can be 0.01~30 μm.
Preferably, the argentum reflecting layer has the close-packed structure of Argent grain.The thickness of the argentum reflecting layer is 1~100 μ
m.Silver powder raw material for forming the argentum reflecting layer is preferably spherical or sheet, and particle size range can be 0.01~20 μ
m.The tap density of the silver powder raw material can be more than 2g/cm3。
According to another embodiment of the present utility model, there is provided a kind of laser fluorescence conversion hysteria light source.The laser fluorescence
Conversion hysteria light source includes the laser aid of above-mentioned Wavelength converter and the incident light source as the Wavelength converter.
The utility model by setting adhesive linkage between aluminum-nitride-based flaggy and argentum reflecting layer, solve argentum reflecting layer with
The problem of aluminium nitride substrate adhesive property difference.In addition, Wavelength converter of the present utility model and laser fluorescence conversion hysteria light source
The high thermal conductivity of high reflectance and aluminium nitride substrate with argentum reflecting layer, and the high thermal conductivity of argentum reflecting layer further increases
Heat conduction and heat radiation effect.Therefore, according to Wavelength converter of the present utility model and laser fluorescence conversion hysteria light source can have compared with
High reflectivity, thermal conductivity and long-time stability.
Brief description of the drawings
Fig. 1 is the cross-sectional view for illustrating the Wavelength converter according to an embodiment of the present utility model.
Fig. 2 is the cross-sectional view for illustrating the Wavelength converter according to another embodiment of the present utility model.
Embodiment
Described in detail next, with reference to accompanying drawing according to Wavelength converter of the present utility model.
Fig. 1 is the schematic sectional view for showing an embodiment according to Wavelength converter of the present utility model.
As shown in figure 1, it is different from three level stack structure of the prior art, turned according to the wavelength of an embodiment of the present utility model
Changing device has four layers of stacked structure, i.e., the aluminum-nitride-based flaggy 4 stacked gradually from top to bottom, adhesive linkage 3, the and of argentum reflecting layer 2
Fluorescence coating 1.
Aluminum-nitride-based flaggy 4 is the aluminum nitride ceramic substrate for having high thermal conductivity, and its thickness is 1~1000 μm.
Argentum reflecting layer 2 is used to reflect the light beam being emitted from fluorescence coating 1, and is at least mixed by silver powder and organic carrier
Formed into silver paste and through oversintering.It is mixed into for example, argentum reflecting layer can also be by silver powder, organic carrier and glass dust
Silver paste is simultaneously formed through oversintering.Argentum reflecting layer 2 has the close-packed structure of Argent grain.Here, it should be appreciated that when
The density that the argentum reflecting layer formed is sintered by silver paste has reached 10g/cm3During the above, you can be referred to as " the closs packing knot of Argent grain
Structure ".Organic carrier can be known any appropriate organic carrier, for example, it may be ethyl cellulose, terpinol, butyl
The organic carrier of carbitol, butyl carbitol ester mixed dissolution.The thickness range of argentum reflecting layer 2 be 1~100 μm, preferably 2~
50 μm, more preferably 5~30 μm.In the case of argentum reflecting layer thickness is less than 1 μm, silver paste technique is not easily controlled；Silver-colored anti-
In the case of thickness degree is penetrated more than 100 μm, it is unfavorable for obtaining fine and close smooth argentum reflecting layer surface.The particle size range of raw material silver powder is
0.01~20 μm, silver powder of the particle diameter less than 0.01 μm is not easy to disperse, and silver paste surface prepared by silver powder of the particle diameter more than 20 μm is put down
Whole degree is not easily controlled, and the bigger silver powder of particle diameter is less susceptible to the densified sintering product in aluminum-nitride-based plate surface, and adhesive force is got over
Difference.Raw material silver powder is preferably spherical or sheet, both shaped particles advantageously form silver powder close-packed structure so that silver is anti-
It is finer and close to penetrate layer.The tap density of raw material silver powder is more than 2g/cm3, preferably greater than 4g/cm3, more preferably greater than 6g/cm3。
Fluorescence coating 1 is formed by fluorescent material, glass dust and organic carrier mixed sintering.Fluorescent material preferably has garnet knot
The Lu of structure3Al5O12:Ce3+、Y3Al5O12:Ce3+Etc. yellow and green emitting phosphor.Glass dust preferably has the borosilicate of high thermal stability
Hydrochlorate lead-free glass powder.The thickness range of fluorescence coating 1 is preferably 10~1000 μm.Fluorescence coating 1 is sent under the exciting of exciting light
The stimulated light of predetermined color.
Adhesive linkage 3 is arranged between aluminum-nitride-based flaggy 4 and argentum reflecting layer 2, adhesive linkage 3 and aluminum-nitride-based flaggy 4 and silver
Reflecting layer 2 can be bonded securely.For example, adhesive linkage 3 can be alumina layer.Known arbitrarily suitable side can be used
Formula formed on aluminium nitride substrate 4 as alumina layer.For example, adhesive linkage 3 can be made by heating aluminum-nitride-based flaggy 4
Its surface oxidation and the alumina layer obtained.Or adhesive linkage 3 can be formed using physical coating technique in aluminium nitride substrate
Pellumina on 4 surfaces, physical coating technique described here include but is not limited to vacuum evaporation and magnetic control sputtering plating.By aoxidizing
The thickness range of adhesive linkage 3 that aluminium is formed can be 0.01~30 μm, preferably 0.1~20 μm, still more preferably for 0.5~
10μm., can be on the premise of meeting advantageously to implement manufacturing process, it is ensured that alumina layer has low in above-mentioned thickness range
Thermal resistance.
Alternately, adhesive linkage 3 can also be glass adhesive linkage.Contain glass dust and organic carrier in glass adhesive linkage.
Organic carrier in glass adhesive linkage can be known any appropriate organic carrier, for example, it may be ethyl cellulose, pine
Oleyl alcohol, butyl carbitol, the organic carrier of butyl carbitol ester mixed dissolution.The thickness range of glass adhesive linkage 3 can be
0.01~30 μm, preferably 0.1~20 μm, it is still more preferably 0.5~10 μm., can be full in above-mentioned thickness range
On the premise of foot advantageously implements manufacturing process, it is ensured that glass adhesive linkage 3 has low thermal resistance.For forming glass adhesive linkage
For the thermal coefficient of expansion of glass dust close to the thermal coefficient of expansion of aluminium nitride, i.e. the scope of its thermal coefficient of expansion is 0.6*10-6/ K~
8.6*10-6/ K, preferably 1.6*10-6/ K~7.6*10-6/ K, more preferably 2.6*10-6/ K~6.6*10-6/K.So in nitrogen
Change aluminium base on high temperature sintering glass paste it is small with the thermal stress of aluminium nitride substrate after the cooling period, can realize with it is aluminum-nitride-based
The more preferable bonding of plate.In addition, research is found, will substantially occur at a temperature of forming the silver paste of argentum reflecting layer more than 700 DEG C
Sintering behavior.Because the thermal coefficient of expansion of silver is much higher relative to the glass dust and aluminium nitride substrate of glass adhesive linkage 3, therefore apply
The argentum reflecting layer being overlying on glass adhesive linkage 3 occurs in high temperature sintering cooling procedure more obviously to be shunk and may stick up
It is bent.Further study show that the glass softening point temperature of glass adhesive linkage 3 is higher, the degree of above-mentioned warpage is lower.Work as glass
When the glass softening point temperature Tf of adhesive linkage 3 is higher than 900 DEG C, warpage does not occur substantially for argentum reflecting layer, can be in glass adhesive linkage 3
It is upper to realize close smooth bonding.
Fig. 2 shows the schematic sectional view of another embodiment according to Wavelength converter of the present utility model.Root
Construction according to the Wavelength converter shown in the construction and Fig. 1 of the Wavelength converter of the embodiment is essentially identical, both
It the difference is that only：In fig. 2, the coating width of fluorescence coating 1 is more than the coating width of argentum reflecting layer 2.So, fluorescence coating 1
It is formed to wrap upper surface and the side wall of argentum reflecting layer 2.Therefore, in the present embodiment, fluorescence coating 1 and aluminium nitride substrate
4 argentum reflecting layer 2 is fully sealed, and makes it completely isolated with external environment condition, it is therefore prevented that argentum reflecting layer 2 blacks because of vulcanization, enters
One step improves the long-time stability of device.
It should be appreciated that above-mentioned embodiment be only exemplary rather than it is restricted.For example, for forming fluorescence coating
Glass dust, the glass dust for forming argentum reflecting layer and for formed glass adhesive linkage glass dust can with identical or different,
And the glass dust that can be arbitrarily adapted to according to known to being actually needed selection.For example, for forming the organic carrier of fluorescence coating, using
Can be with identical or different in the organic carrier for forming argentum reflecting layer and the organic carrier for forming glass adhesive linkage, and can root
The organic carrier being arbitrarily adapted to known to selection according to being actually needed.
In addition, can have preferably hair using according to the Wavelength converter of four layers of stacked structure of the present utility model
Light efficiency and brightness.In order to prove beneficial effect and be easy to measurement to record, swash what the blue laser of different luminous powers was sent
Under the shooting condition of light, make sample 1 and the stabilized illumination 3min of sample 2, at the same time, measure sample 1 respectively and the light of sample 2 leads to
Measure to evaluate respective luminous efficiency and brightness, wherein, sample 1 is to stack gradually aluminum-nitride-based flaggy according to of the present utility model
4th, the Wavelength converter of glass adhesive linkage 3, argentum reflecting layer 2 and fluorescence coating 1, sample 2 are of the prior art to stack gradually nitrogen
Change the Wavelength converter (not shown) of aluminium base flaggy, diffusing reflection layer and fluorescence coating.Experimental result is as shown in Table 1 below.
The experimental result of the sample 1 of table 1 and sample 2
| Luminous power/W | Luminous flux/Lm of sample 2 | Luminous flux/Lm of sample 1 |
| 4.6 | 1163.1 | 1193.3 |
| 7 | 1714.2 | 1749.0 |
| 9.3 | — | 2300.7 |
As seen from Table 1, under the shooting condition for the laser that the blue laser of 4.6W luminous powers is sent, the hair of sample 1
Light efficiency improves 2.6% compared to the luminous efficiency of sample 2；Bar is excited in the laser that the blue laser of 7W luminous powers is sent
Under part, the luminous efficiency of sample 1 improves 2.0% compared to the luminous efficiency of sample 2；And as luminous power is increased to 9.3W, sample
The luminous flux of product 2 even occurs declining phenomenon, and the luminous flux of sample 1 further increases.Therefore, according to ripple of the present utility model
Long conversion equipment is while with higher reflectivity, thermal conductivity and stability, also with more preferable luminous efficiency and brightness.
Above-mentioned Wavelength converter is included according to laser fluorescence conversion hysteria light source of the present utility model.In addition, laser fluorescence
Conversion hysteria light source is additionally provided with laser aid.The laser aid is used as the incident light source of the Wavelength converter.
Although turn above with reference to the accompanying drawings of according to Wavelength converter of the present utility model and laser fluorescence
Remodel light source, but the utility model not limited to this, and it will be understood by those skilled in the art that enclosed without departing from the utility model
In the case of the spirit or scope that claims limit, various changes, combination, secondary combination and modification can be made.
Claims (10)
1. a kind of Wavelength converter, including substrate layer (4), argentum reflecting layer (2) and the fluorescence coating (1) stacked gradually, the silver
Reflecting layer (2) is used for the light beam for reflecting the outgoing from the fluorescence coating (1),
Characterized in that, the substrate layer (4) is aluminium nitride substrate, and
The Wavelength converter also includes：
Adhesive linkage (3), the adhesive linkage (3) are arranged between the substrate layer (4) and the argentum reflecting layer (2), and described
Adhesive linkage (3) is bonded to the substrate layer (4) and the argentum reflecting layer (2) securely.
2. Wavelength converter according to claim 1, it is characterised in that fluorescence coating (1) the parcel silver reflection
The upper surface of layer (2) and side wall so that the argentum reflecting layer (2) is sealed by the fluorescence coating (1) and the adhesive linkage (3).
3. Wavelength converter according to claim 1 or 2, it is characterised in that the adhesive linkage (3) is glass bonding
Layer.
4. Wavelength converter according to claim 3, it is characterised in that the thickness of the glass adhesive linkage be 0.01~
30μm。
5. Wavelength converter according to claim 3, it is characterised in that form the glass dust of the glass adhesive linkage
Thermal coefficient of expansion is 0.6 × 10-6/ K~8.6 × 10-6/K。
6. Wavelength converter according to claim 3, it is characterised in that form the glass dust of the glass adhesive linkage
Glass softening point temperature is higher than 900 DEG C.
7. Wavelength converter according to claim 1 or 2, it is characterised in that the adhesive linkage (3) is alumina layer.
8. Wavelength converter according to claim 7, it is characterised in that the thickness of the alumina layer is 0.01~30
μm。
9. Wavelength converter according to claim 1 or 2, it is characterised in that the argentum reflecting layer (2) has Argent grain
Close-packed structure.
A kind of 10. laser fluorescence conversion hysteria light source, it is characterised in that the laser fluorescence conversion hysteria light source include laser aid and
Wavelength converter as claimed in any one of claims 1-9 wherein, the laser aid are used as entering for the Wavelength converter
Penetrate light source.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720524993.1U CN206929725U (en) | 2017-05-12 | 2017-05-12 | Wavelength converter and laser fluorescence conversion hysteria light source |
| PCT/CN2018/074749 WO2018205694A1 (en) | 2017-05-12 | 2018-01-31 | Wavelength conversion device and phosphor-converted laser light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720524993.1U CN206929725U (en) | 2017-05-12 | 2017-05-12 | Wavelength converter and laser fluorescence conversion hysteria light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206929725U true CN206929725U (en) | 2018-01-26 |
Family
ID=61350785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720524993.1U Active CN206929725U (en) | 2017-05-12 | 2017-05-12 | Wavelength converter and laser fluorescence conversion hysteria light source |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN206929725U (en) |
| WO (1) | WO2018205694A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205694A1 (en) * | 2017-05-12 | 2018-11-15 | 深圳市光峰光电技术有限公司 | Wavelength conversion device and phosphor-converted laser light source |
| CN110261942A (en) * | 2018-03-12 | 2019-09-20 | 深圳光峰科技股份有限公司 | Wavelength converter and preparation method thereof |
| CN111063810A (en) * | 2018-10-16 | 2020-04-24 | 深圳光峰科技股份有限公司 | Light emitting device and method for manufacturing the same |
| CN111129261A (en) * | 2019-12-18 | 2020-05-08 | 华中科技大学鄂州工业技术研究院 | White light LED and preparation process method thereof |
| CN115895657A (en) * | 2022-10-11 | 2023-04-04 | 中国计量大学 | Fluorescent emission layer prepared based on metal aluminum-based mesoporous alumina and preparation method and application thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019167819A1 (en) * | 2018-03-01 | 2019-09-06 | 住友ベークライト株式会社 | Paste adhesive composition and semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5457176B2 (en) * | 2007-06-08 | 2014-04-02 | 東洋鋼鈑株式会社 | Manufacturing method of light reflector |
| CN201327844Y (en) * | 2008-12-02 | 2009-10-14 | 苏州久腾光电科技有限公司 | Package structure of surface-mount LED module |
| CN101673802B (en) * | 2009-09-27 | 2011-11-23 | 上海大学 | Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof |
| US9287684B2 (en) * | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
| CN202253379U (en) * | 2011-08-19 | 2012-05-30 | 苏州锦富新材料股份有限公司 | High heat conduction composite membrane reflecting plate |
| CN106195924B (en) * | 2013-06-08 | 2019-05-03 | 深圳光峰科技股份有限公司 | A kind of Wavelength converter and preparation method thereof, related lighting fixtures |
| CN103730565B (en) * | 2014-01-17 | 2016-08-03 | 北京大学东莞光电研究院 | A kind of method for packing of aluminium nitride COB LED light source |
| CN105805699B (en) * | 2014-12-30 | 2019-01-08 | 深圳市光峰光电技术有限公司 | The preparation method of Wavelength converter |
| CN206929725U (en) * | 2017-05-12 | 2018-01-26 | 深圳市光峰光电技术有限公司 | Wavelength converter and laser fluorescence conversion hysteria light source |
-
2017
- 2017-05-12 CN CN201720524993.1U patent/CN206929725U/en active Active
-
2018
- 2018-01-31 WO PCT/CN2018/074749 patent/WO2018205694A1/en active Application Filing
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205694A1 (en) * | 2017-05-12 | 2018-11-15 | 深圳市光峰光电技术有限公司 | Wavelength conversion device and phosphor-converted laser light source |
| CN110261942A (en) * | 2018-03-12 | 2019-09-20 | 深圳光峰科技股份有限公司 | Wavelength converter and preparation method thereof |
| CN111063810A (en) * | 2018-10-16 | 2020-04-24 | 深圳光峰科技股份有限公司 | Light emitting device and method for manufacturing the same |
| CN111063810B (en) * | 2018-10-16 | 2021-11-12 | 深圳光峰科技股份有限公司 | Light emitting device and method for manufacturing the same |
| CN111129261A (en) * | 2019-12-18 | 2020-05-08 | 华中科技大学鄂州工业技术研究院 | White light LED and preparation process method thereof |
| CN111129261B (en) * | 2019-12-18 | 2021-06-01 | 华中科技大学鄂州工业技术研究院 | White light LED and preparation process method thereof |
| CN115895657A (en) * | 2022-10-11 | 2023-04-04 | 中国计量大学 | Fluorescent emission layer prepared based on metal aluminum-based mesoporous alumina and preparation method and application thereof |
| CN115895657B (en) * | 2022-10-11 | 2024-06-04 | 中国计量大学 | Fluorescent emission layer prepared based on metal aluminum-based mesoporous alumina, preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018205694A1 (en) | 2018-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206929725U (en) | Wavelength converter and laser fluorescence conversion hysteria light source | |
| TWI311803B (en) | ||
| EP1873563B1 (en) | Light-emitting device using reflective member and illuminating device | |
| US8506130B2 (en) | Optical element for a light emitting device and a method of manufacturing thereof | |
| US8916893B2 (en) | Light-emitting device | |
| TW201201420A (en) | Phosphor ceramic and light-emitting device | |
| CN108930919B (en) | Wavelength conversion device, preparation method thereof and light source | |
| CN104953014A (en) | Multilayer structure glass fluorescent powder sheet, manufacturing method therefor, and light-emitting device | |
| JP2012510716A (en) | LED assembly | |
| CN107565003A (en) | Quantum dot LED encapsulation structure | |
| EP3739257B1 (en) | Wavelength conversion apparatus | |
| JP2007201156A (en) | Light emitting diode and package therefor | |
| JP2017107071A (en) | Wavelength conversion member and wavelength conversion element, and light emitting device using the same | |
| CN111213075B (en) | Wavelength conversion member and light emitting device | |
| EP2092578A1 (en) | Illumination device, particularly with luminescent ceramics | |
| TW200522396A (en) | Light emitting devices with enhanced luminous efficiency | |
| CN109681846B (en) | Wavelength conversion device and preparation method thereof | |
| CN108870119A (en) | Wavelength converter and preparation method thereof, laser fluorescence conversion hysteria light source | |
| JP2006156447A (en) | Wiring board for light emitting element, light emitting device and its manufacturing method | |
| KR101478124B1 (en) | Led package and menufacturing method of the same | |
| CN112537953B (en) | Composite fluorescent ceramic and preparation method thereof | |
| KR20060031629A (en) | Substrate for mounting luminous element and luminous element | |
| JP2012044000A (en) | Substrate for mounting light emitting device | |
| Zheng et al. | A double-layer white light converter with high-efficiency heat transfer structure for high-power NUV LEDs/LDs | |
| CN109964154A (en) | The light-diffusing films of extraction performance with enhancing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address after: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518055 Guangdong province Shenzhen Nanshan District Xili town south of Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |
|
| CP03 | Change of name, title or address |