CN206908855U - A kind of piezoelectric microphone - Google Patents
A kind of piezoelectric microphone Download PDFInfo
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- CN206908855U CN206908855U CN201720575489.4U CN201720575489U CN206908855U CN 206908855 U CN206908855 U CN 206908855U CN 201720575489 U CN201720575489 U CN 201720575489U CN 206908855 U CN206908855 U CN 206908855U
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- piezoelectric
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- piezoelectric film
- hollow hole
- gap
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- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 18
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- 238000009826 distribution Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 abstract description 4
- 208000027418 Wounds and injury Diseases 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 208000014674 injury Diseases 0.000 abstract description 3
- 230000009545 invasion Effects 0.000 abstract description 3
- -1 particulate Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000005236 sound signal Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
The utility model discloses a kind of piezoelectric microphone, including the substrate with back of the body chamber, and it is connected to by insulating barrier the piezoelectric film above substrate；Piezoelectric film and the position on the inside of substrate tie point are provided with multiple hollow holes on the piezoelectric film, hollow hole on the piezoelectric film overlaps with substrate at least in part, there is gap, the gap is configured to passage together with hollow hole on the piezoelectric film between the position of hollow hole and substrate.For relatively conventional engraved structure, gap of the present utility model can hinder sound directly to be spread out of by hollow hole, so as to substantially reduce the piezoelectric microphone low frequency signal, intermediate-freuqncy signal leakage rate, improve the performance of piezoelectric microphone.And the gap can also effectively prevent dust, particulate, water invasion from producing injury to chip.
Description
Technical field
Microphone field is the utility model is related to, more particularly, to a kind of piezoelectric microphone.
Background technology
MEMS microphone application popularization is in consumption electronic products.Traditional MEMS microphone is mainly condenser type
Microphone, it includes substrate and forms backplane, vibrating diaphragm on substrate.The vibrating diaphragm constitutes capacitor arrangement with backplane.
Using the design of this duplicature, the air damping problem between backplane and vibrating diaphragm can not be avoided, therefore its SNR parameters residence exists
65dB levels.The efficiency of follow-up MEMS capacitive microphone will upgrade, it is necessary to by the breakthrough on material technology and design architecture.
With the development of science and technology, piezoelectric silicon microphone gradually starts to grow up, the manufacture craft letter of piezoelectric microphones
It is single.Because making it not limited by air damping using the design architecture of monofilm, SNR is lifted naturally.This external cause piezoelectric type silicon wheat
The structure of gram wind is simple, and it is also greatly promoted to the adaptive capacity to environment such as antifouling, dust-proof, waterproof.In recent years, with AIN, PZT
The breakthrough of material, piezoelectric type MEMS microphone is by for the exploitation main flow of MEMS microphone of new generation.
But piezoelectric microphones, compared with condenser microphone, the disadvantage for influenceing its popularization and application is piezoelectricity Mike
The sensitivity of wind is too low.That is the ability of piezoelectric film sensing audio signal is far below the energy of vibrating diaphragm in Electret Condencer Microphone
Power.In order to lift the sensitivity of piezoelectric microphone, most manufacturers all use the design that hollow out is carried out on piezoelectric film, but this
The design of kind hollow out make it that the leakage of low frequency signal even intermediate-freuqncy signal is very serious；And also reduce the significant surface of piezoelectric film
Product, makes it can not be efficiently received sound signal, and properties of product have very big gap with gross data, can not reach expected property
Energy.
Utility model content
A purpose of the present utility model is to provide a kind of new solution of piezoelectric microphone.
According to first aspect of the present utility model, there is provided a kind of piezoelectric microphone, including the substrate with back of the body chamber, with
And the piezoelectric film above substrate is connected to by insulating barrier；On the piezoelectric film on the inside of piezoelectric film and substrate tie point
Position is provided with multiple hollow holes, and the hollow hole on the piezoelectric film overlaps with substrate at least in part, the piezoelectricity
There is gap, the gap is configured to passage together with hollow hole on film between the position of hollow hole and substrate.
Alternatively, the multiple hollow hole is distributed around the back of the body chamber of the substrate.
Alternatively, the insulating barrier between the substrate and piezoelectric film is in continuous continual cyclic structure.
Alternatively, the insulating barrier between the substrate and piezoelectric film is in the cyclic structure being interrupted.
Alternatively, the hollow hole is penetrated to the edge of piezoelectric film, the hollow hole Relative distribution at two of interruption absolutely
Between edge layer.
Alternatively, hollow hole overlaps to the part between piezoelectricity center membrane with substrate on the piezoelectric film.
Alternatively, the gap between the piezoelectric film and substrate is 0.5um~3um.
Alternatively, the hollow hole is rounded, rectangle, ellipse, sector or trapezoidal.
Alternatively, the piezoelectric film successively include be combined with each other first electrode layer, piezoelectric intermediate layer, second electricity
Pole layer.
Alternatively, the first electrode layer, piezoelectric intermediate layer, the second electrode lay are compounded in one by way of deposition
Rise.
A kind of piezoelectric microphone suitable for both sides sound source provided by the utility model, hollow hole only pass through gap
The passage of connection piezoelectric film both sides can be formed, this allows for normal pronunciation and could only circulated away by gap.It is relative to pass
For the engraved structure of system, gap of the present utility model can hinder sound directly to be spread out of by hollow hole, so as to significantly
The piezoelectric microphone low frequency signal, the leakage rate of intermediate-freuqncy signal are reduced, improves the performance of piezoelectric microphone.And between being somebody's turn to do
Gap can also effectively prevent dust, particulate, water invasion from producing injury to chip.
Inventor of the present utility model has found that in the prior art, the engraved structure set on piezoelectric film can cause low
The leakage of frequency signal even intermediate-freuqncy signal is very serious；And the effective area of piezoelectric film is also reduced, make it can not be effectively
Sound signal is received, properties of product have very big gap with gross data, can not reach estimated performance.Therefore, the utility model
Either technical problem to be solved is that those skilled in the art never expect or without pre- the technical assignment to be realized
What the phase arrived, therefore the utility model is a kind of new technical scheme.
It is of the present utility model other by referring to the drawings to the detailed description of exemplary embodiment of the present utility model
Feature and its advantage will be made apparent from.
Brief description of the drawings
It is combined in the description and the accompanying drawing of a part for constitution instruction shows embodiment of the present utility model, and
And it is used to explain principle of the present utility model together with its explanation.
Fig. 1 is the top view of the utility model piezoelectric film.
Fig. 2 is the schematic diagram of sound source under the utility model microphone.
Fig. 3 is the schematic diagram of sound source on the utility model microphone.
Fig. 4 is the top view of another embodiment of the utility model piezoelectric film.
Embodiment
Various exemplary embodiments of the present utility model are described in detail now with reference to accompanying drawing.It should be noted that：It is unless another
Illustrate outside, the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments is unlimited
The scope of the utility model processed.
The description only actually at least one exemplary embodiment is illustrative to be never used as to this practicality below
New and its application or any restrictions used.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
Referring to figs. 1 to Fig. 2, the utility model provides a kind of piezoelectric microphone, including substrate 1, and passes through insulation
Layer 2 is connected to the piezoelectric film 3 of the top of substrate 1.Formed with back of the body chamber 10, the edge of the piezoelectric film 3 passes through the central region of substrate 1
Insulating barrier 2 is supported on the top of substrate 1, so as to ensure the insulation between piezoelectric film 3 and substrate 1, and piezoelectric film 3 is connected except edge
The other regions for connecing position are suspended at the top that substrate 1 carries on the back chamber 10.
Microphone of the present utility model can use MEMS technology to manufacture, and monocrystalline silicon material, insulating barrier 2 can be selected in substrate 1
Silica material can be used, piezoelectric film 3 can use AIN, PZT material.In one specific embodiment party of the utility model
In formula, the piezoelectric film 3 successively include be combined with each other first electrode layer 30, piezoelectric intermediate layer 31, the second electrode lay
32.It is this it is compound can be by being sequentially depositing to realize in MEMS technology, can also be by known to piezoelectric field
Other manner is carried out, and is no longer illustrated herein.
The shape of piezoelectric film 3 of the present utility model and substrate 1 matches, and it can select circular, rectangle or this area skill
Other shapes known to art personnel.Wherein, multiple hollow holes 4 are provided with the piezoelectric film 3, the plurality of hollow hole 4 is set
Put on the inner side of piezoelectric film 3 and the link position of substrate 1.That is, the marginal position of piezoelectric film 3 passes through insulating barrier 2
Support and be connected to the top of substrate 1, the hollow hole 4 is arranged on the vibration area of piezoelectric film 3, so that the hollow hole 4
The purpose for improving the sensitivity of piezoelectric film 3 can be played.
Wherein, the hollow hole 4 on the piezoelectric film 3 overlaps with substrate 1 at least in part.With reference to figure 2, the pressure
Hollow hole 4 on electrolemma 3 is at least partially situated at the surface of substrate 1 so that the position of hollow hole 4 and substrate 1 on piezoelectric film 3
Between there is gap 5.That is, there is no insulating barrier 2 between the position of 3 hollow hole of piezoelectric film 4 and substrate 1 so that on piezoelectric film 3
The position of hollow hole 4 vacantly in the surface of substrate 1.The gap 5 is configured to connect the back of the body chamber 10 together with hollow hole 4
With the passage of the top of piezoelectric film 3.
Piezoelectric microphone of the present utility model, hollow hole, which only has to be made up of gap, connects the logical of piezoelectric film both sides
Road, this allows for normal pronunciation and could only circulated away by gap.For relatively conventional engraved structure, this practicality is new
The gap of type can hinder sound directly to be spread out of by hollow hole, so as to substantially reduce piezoelectric microphone low frequency letter
Number, the leakage rate of intermediate-freuqncy signal, improve the performance of piezoelectric microphone.And the gap can also effectively prevent dust, particulate,
Water invasion produces injury to chip.
Piezoelectric microphone of the present utility model is both applicable to sound source, is equally applicable to lower sound source, with reference to figure 2, figure
3.Fig. 2 illustrates the schematic diagram of lower sound source, and sound enters from the lower section of back of the body chamber 10, and now gap 5 can reduce low frequency, intermediate frequency
Leakage rate of the signal from hollow hole 4.Fig. 3 shows the schematic diagram of sound source, and sound enters from the top of piezoelectric film 3, by engraving
When emptying aperture 4 is entered in gap 5, the gap 5 can equally hinder low frequency, the leakage rate of intermediate-freuqncy signal.
Piezoelectric microphone of the present utility model, because the Relative distribution of hollow hole 4 is carrying on the back the outside of chamber 10, this is allowed for can
To control, adjust the leakage rate of acoustic pressure.Such as the length and height in gap 5 can be controlled, hindered so as to reach regulation gap 5
The purpose of ability.
Such as in one specific embodiment of the utility model, the height in the gap 5 for example can be 0.5um~
3um。
In the utility model another specific embodiment, hollow hole 4 on the piezoelectric film 3 can partly with
Substrate 1 overlaps, and can also all overlap, so as to realize the regulation of the lateral dimension of gap 5.Further preferred
It is that the position of hollow hole 4 to the part between the center of piezoelectric film 3 overlaps with substrate 1 on the piezoelectric film 3.Also
It is to say, not only the position of hollow hole 4 all overlaps with substrate 1, and hollow hole 4 is between the center of piezoelectric film 3 on piezoelectric film 3
Region be also partly extended to the surface of substrate 1, and participate in the formation in gap 5.This substantially prolongs the horizontal chi in gap 5
It is very little, improve the ability of the obstruction of gap 5；And longer gap 5 can also effectively avoid dust particle from invading to the inside of chip.
Multiple hollow holes 4 of the present utility model are uniformly looped around the surrounding that substrate 1 carries on the back chamber 10, the multiple hollow hole 4
It can such as arrange in circular annular form structure as shown in Figure 1, or arrangement is in rectangular ring structure as shown in Figure 4.Wherein, hollow out
Hole 4 can be with rounded, rectangle, ellipse, sector or trapezoidal etc..Insulating barrier 2 between the substrate 1 and piezoelectric film 3 can be in
Continuous continual ring-type, can also be in the cyclic structure of interruption.
When the insulating barrier 2 between substrate 1 and piezoelectric film 3 is in continuous continual cyclic structure, that is to say, that the insulation
Layer 2 is the ring-type of closing, and its substrate 1, the circumferential of piezoelectric film 3 all close, and now, only exist gap 5 and the structure of hollow hole 4
Into passage.
When cyclic structure of the insulating barrier 2 between substrate 1 and piezoelectric film 3 in interruption, the gap 5, two be interrupted
Can form multiple passages between insulating barrier 2 and between hollow hole 4, the structure relative to an above-mentioned only channel case and
Speech, the amount of leakage of microphone can be increased.
Hollow hole 4 of the present utility model can be arranged on the inside of piezoelectric film 3.In contrast, hollow hole 4 can also
Penetrate to the edge of piezoelectric film 3, now, the position that the hollow hole 4 can be with Relative distribution between two insulating barriers 2 of interruption
On, prevent insulating barrier 2 from contacting the hollow hole 4, to ensure not interfering with the effect of the raising sensitivity of piezoelectric film 3 of hollow hole 4.
Although some specific embodiments of the present utility model are described in detail by example, this area
It is to be understood by the skilled artisans that example above merely to illustrate, rather than in order to limit the scope of the utility model.This
Field it is to be understood by the skilled artisans that can not depart from the scope of the utility model and spirit in the case of, to above example
Modify.The scope of the utility model is defined by the following claims.
Claims (10)
- A kind of 1. piezoelectric microphone, it is characterised in that：Including the substrate (1) with back of the body chamber (10), and pass through insulating barrier (2) The piezoelectric film (3) being connected to above substrate (1)；On the piezoelectric film (3) in piezoelectric film (3) and substrate (1) tie point The position of side is provided with multiple hollow holes (4), and the hollow hole (4) on the piezoelectric film (3) is overlapping with substrate (1) at least in part Together, there are gap (5) between the position of hollow hole (4) and substrate (1) on the piezoelectric film (3), the gap (5) is with engraving Emptying aperture (4) is configured to passage together.
- 2. piezoelectric microphone according to claim 1, it is characterised in that：The multiple hollow hole (4) is around the lining Back of the body chamber (10) distribution at bottom (1).
- 3. piezoelectric microphone according to claim 1, it is characterised in that：Between the substrate (1) and piezoelectric film (3) Insulating barrier (2) is in continuous continual cyclic structure.
- 4. piezoelectric microphone according to claim 1, it is characterised in that：Between the substrate (1) and piezoelectric film (3) Insulating barrier (2) is in the cyclic structure being interrupted.
- 5. piezoelectric microphone according to claim 4, it is characterised in that：The hollow hole (4) is penetrated to piezoelectric film (3) Edge, hollow hole (4) Relative distribution is between two insulating barriers (2) of interruption.
- 6. piezoelectric microphone according to claim 1, it is characterised in that：Hollow hole (4) is extremely pressed on the piezoelectric film (3) Part between electrolemma (3) center overlaps with substrate (1).
- 7. piezoelectric microphone according to claim 1, it is characterised in that：Between the piezoelectric film (3) and substrate (1) Gap (5) is 0.5um~3um.
- 8. piezoelectric microphone according to claim 1, it is characterised in that：The hollow hole (4) is rounded, rectangle, ellipse It is circular, fan-shaped or trapezoidal.
- 9. piezoelectric microphone according to claim 1, it is characterised in that：The piezoelectric film (3) includes being compounded in successively First electrode layer (30) together, piezoelectric intermediate layer (31), the second electrode lay (32).
- 10. piezoelectric microphone according to claim 9, it is characterised in that：The first electrode layer (30), piezoelectric Intermediate layer (31), the second electrode lay (32) are combined with each other by way of deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720575489.4U CN206908855U (en) | 2017-05-22 | 2017-05-22 | A kind of piezoelectric microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720575489.4U CN206908855U (en) | 2017-05-22 | 2017-05-22 | A kind of piezoelectric microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206908855U true CN206908855U (en) | 2018-01-19 |
Family
ID=61289177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720575489.4U Active CN206908855U (en) | 2017-05-22 | 2017-05-22 | A kind of piezoelectric microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206908855U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107071672A (en) * | 2017-05-22 | 2017-08-18 | 歌尔股份有限公司 | A kind of piezoelectric microphone |
| CN108337617A (en) * | 2018-03-02 | 2018-07-27 | 上海微联传感科技有限公司 | Piezoelectric microphone |
| CN110519679A (en) * | 2019-10-11 | 2019-11-29 | 安徽奥飞声学科技有限公司 | A kind of MEMS structure |
| WO2021000070A1 (en) * | 2019-06-29 | 2021-01-07 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
-
2017
- 2017-05-22 CN CN201720575489.4U patent/CN206908855U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107071672A (en) * | 2017-05-22 | 2017-08-18 | 歌尔股份有限公司 | A kind of piezoelectric microphone |
| CN108337617A (en) * | 2018-03-02 | 2018-07-27 | 上海微联传感科技有限公司 | Piezoelectric microphone |
| WO2021000070A1 (en) * | 2019-06-29 | 2021-01-07 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN110519679A (en) * | 2019-10-11 | 2019-11-29 | 安徽奥飞声学科技有限公司 | A kind of MEMS structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191118 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co., Ltd Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Gore Co., Ltd. |
|
| TR01 | Transfer of patent right |