CN206864499U - Modular, semiconductor structure and light fixture - Google Patents

Modular, semiconductor structure and light fixture Download PDF

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Publication number
CN206864499U
CN206864499U CN201720566046.9U CN201720566046U CN206864499U CN 206864499 U CN206864499 U CN 206864499U CN 201720566046 U CN201720566046 U CN 201720566046U CN 206864499 U CN206864499 U CN 206864499U
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heat
conductive
modular
pad
semiconductor structure
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李刚
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Shenzhen Dadao Semiconductor Co Ltd
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Shenzhen Dadao Semiconductor Co Ltd
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Abstract

The utility model discloses a kind of Modular, semiconductor structure and light fixture, Modular, semiconductor structure includes at least a multilayer circuit board and heat-conducting substrate;First surface of the heat-conducting substrate away from multilayer circuit board is provided with some conductive welding disks, and the second surface of heat-conducting substrate towards multilayer circuit board is provided with some first connection pads;Some first conductive poles are provided with heat-conducting substrate, the both ends of the first conductive pole extend through first surface and second surface and pad connection is connected with conductive welding disk and first;Multilayer circuit board is provided with some second connection pads towards the surface of heat-conducting substrate, and the second connection pad is connected pad connection conducting conductive welding disk and multilayer circuit board with first.The utility model is simple in construction, pass through the combination of heat-conducting substrate and the multilayer circuit board to conduct electricity very well, realize to realizing that high current controls on a large scale to different colours luminescent device required by intelligent lighting, the light source species that can be used is not limited, monolithic conductive good heat conductivity, suitable for industrialized manufacture.

Description

Modular, semiconductor structure and light fixture
Technical field
A kind of Modular, semiconductor structure is the utility model is related to, more particularly to a kind of manufacture high power intelligent that is applicable illuminates The Modular, semiconductor structure and light fixture of light source.
Background technology
With the lifting of semiconductor light emitting efficiency, the decline of manufacturing cost and the raising of service life, its application is Through covering the fields such as display, backlight and illumination.
, can oneself be wide by the intelligent lightings of APP controlled in wireless changing color freelies in order to meet the lighting demand under different scenes It is general to be applied to the fields such as business, household, office, landscape, stage.Normal monochrome white-light illuminating is different from, in order in different feelings Under scape, the light of different colours is projected from same illuminator, its light source must be by the monochromatic light of different wave length, such as Red, green, blue, Huang, and/or the white light composition of different-colour, then by the luminous strong of power controller controls each colour light sources Degree, so as to be combined into the light projection of thousands of kinds of different colours to face to be illuminated, realizes the purpose of intelligent lighting.
The general principle of above-mentioned intelligent lighting is very similar with widely known full color display.Common full color display The semiconductor light-emitting elements of different colours, such as red, green, blue light emitting diode are arranged in multilayer circuit board by generally use in order On, full-color display is realized by the electric current of each red, green, blue light emitting diode by power supply and addressable controller control Purpose.Multilayer circuit board is rigidity or flexible, and the base material of use includes but is not limited to papery, glass cloth, synthetic fibers matter, nothing Spin cloth, composite.
As shown in figure 1, in currently used full color display, including multilayer circuit board 10, external pad 11, be arranged on it is more Conducting channel 12 in sandwich circuit board 10, the conductive welding disk 13 for being arranged on the surface of multilayer circuit board 10, connection conductive welding disk 13 and The metallic conduction post 14 of conducting channel 12 and the light emitting diode 15 being welded on conductive welding disk 13.
As shown in Figure 1, for area it is big, without optically focused and for the full color display without requirements such as projection distances, it is each Individual light emitting diode 15 by electric current be only several milliamperes to tens milliamperes, caused heat completely can be by being arranged on multilayer The fan of the behind of wiring board 10, by forcing the method for cooling multiplayer wiring board 10 to realize the radiating of full color display, to multilayer The capacity of heat transmission of the material of wiring board 10 is less demanding.
The use environment of intelligent lighting is entirely different with full color display with requirement.On the one hand, in order to being placed on In the illuminator of finite volume, the dimension of light source of intelligent lighting is extremely limited;On the other hand, in order to meet necessarily to project There is enough illumination according to surface at distance, required by the brightness on the light source surface of intelligent lighting or flat light source surface area Luminous flux output be far longer than full color display.In order to achieve the above object, each light emitting diode shown in Fig. 1 leads to The electric current crossed is not tens milliamperes but hundreds to thousands milliampere.Obviously, it is very big can not to pass through thermal resistance for its caused heat Multilayer circuit board, even if cooling is still forced in the back side using fan, the huge temperature difference caused by multilayer circuit board thermal resistance can be with Cause multilayer circuit board surface temperature rise very big, not only influence service life, reliability and the light decay of light emitting diode, it is also possible to Burn resin base circuit board.
See for aobvious, the heat-conducting substrate that currently used multilayer circuit board cannot function as intelligent lighting illuminating source makes With.Therefore, it is necessary to design a kind of Modular, semiconductor structure that can be used for high power intelligent illumination illuminating source.
Utility model content
The technical problems to be solved in the utility model is, there is provided a kind of group for being applicable manufacture high power intelligent lighting source Type semiconductor structure and the light fixture using the Modular, semiconductor structure.
Technical scheme is used by the utility model solves its technical problem:A kind of Modular, semiconductor structure is provided, Including at least a multilayer circuit board and heat-conducting substrate;First surface of the heat-conducting substrate away from the multilayer circuit board is provided with Some conductive welding disks, the second surface of the heat-conducting substrate towards the multilayer circuit board are provided with some first connection pads;Institute State in heat-conducting substrate and be provided with some first conductive poles, the both ends of first conductive pole extend through the first of the heat-conducting substrate Surface and second surface, pad connection is connected with the conductive welding disk and first;
The multilayer circuit board is provided with some second connection pads, second connection towards the surface of the heat-conducting substrate Pad is connected pad connection with described first and turns on the conductive welding disk and multilayer circuit board.
Preferably, if the multilayer circuit board includes base material, the dried layer conducting channel that is arranged in the base material and some Second conductive pole, some external pads of setting on the substrate;The second connection pad is arranged on the base material direction On the surface of the heat-conducting substrate, the external pad be arranged on the base material backwards to and/or the table towards the heat-conducting substrate On face;Second conductive pole electrically connects with the conducting channel, and through the surface of the base material, connects described the respectively Two connection pads and external pad.
Preferably, the conducting channel includes positive conductive circuit and negative conductive circuit;The external pad is included just The external pad of extremely external pad and negative pole;
Second conductive pole includes some positive conductive posts and some negative conductive posts;Some positive conductive posts lead to A positive conductive circuit is crossed with the external pad of the positive pole to be connected, or, some negative conductive posts pass through an institute Negative conductive circuit is stated with the external pad of the negative pole to be connected.
Preferably, in some conductive welding disks, mutually insulated between the different conductive welding disk of polarity, polarity identical Pad is connected after the conductive welding disk interconnection with described first by first conductive pole again to be connected.
Preferably, in some first connection pads, mutually insulated between different the first connection pad of polarity, pole Property identical described in first connection interconnected after again with it is corresponding it is described second connection pad be connected.
Preferably, in some second connection pads, mutually insulated between different the second connection pad of polarity, pole Property identical described in second connection interconnected.
Preferably, the heat-conducting substrate is ceramic wafer, heat conduction plastic plate or metallic plate;
The multilayer circuit board is rigidity or flexible copper-clad plate.
Preferably, first surface of the heat-conducting substrate away from the multilayer circuit board is provided with some external pads, described External pad is connected with least one conductive welding disk;And/or the heat-conducting substrate is towards the second of the multilayer circuit board Surface is provided with some external pads, and the external pad is connected pad with least 1 first and is connected.
Preferably, the first surface of the heat-conducting substrate, second surface and/or side are provided with an at least thermal conductive zone.
Preferably, the Modular, semiconductor structure also includes and the close-connected heat-conducting piece in the thermal conductive zone.
Preferably, the periphery of the partly or entirely Modular, semiconductor structure is surrounded in the heat-conducting piece extension, forms institute State the heat sink of Modular, semiconductor structure, supporter, housing, and/or radiator.
Preferably, the heat-conducting piece being connected with the Modular, semiconductor structure is fixed on heat sink, housing, support Thing, and/or spreader surface..
Preferably, the Modular, semiconductor structure also includes being connected to light emitting diode on the conductive welding disk, and/ Or light-emitting diode chip for backlight unit.
The Modular, semiconductor structure also includes the light emitting diode being connected on the conductive welding disk.
The utility model also provides a kind of light fixture, including the Modular, semiconductor structure described in any of the above item.
Preferably, the light fixture also includes radiator;The heat sink of Modular, semiconductor structure, supporter, housing and/ Or radiator is connected with the radiator.
Modular, semiconductor structure of the present utility model, it is simple in construction, pass through heat-conducting substrate and the conduction of good heat conductivity The combination of the good multilayer circuit board of performance, it can be achieved to realizing high current to different colours luminescent device required by intelligent lighting Control on a large scale, is not limited the light source species that can be used, and composite unit structure is simple, monolithic conductive good heat conductivity, Suitable for industrialized manufacture.Using the light fixture of the Modular, semiconductor structure, species is extensive, can high-power illumination.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing:
Fig. 1 be prior art full color display in multilayer circuit board structural representation;
Fig. 2 is the structural representation of the Modular, semiconductor structure of the utility model first embodiment;
Fig. 3 is the structural representation of the Modular, semiconductor structure of the utility model second embodiment;
Fig. 4 is the structural representation of the Modular, semiconductor structure of the utility model 3rd embodiment;
Fig. 5 is the structural representation of the Modular, semiconductor structure of the utility model fourth embodiment.
Embodiment
In order to which the technical characteristics of the utility model, purpose and effect are more clearly understood, it is detailed now to compare accompanying drawing Illustrate specific embodiment of the present utility model.
As shown in Fig. 2 the Modular, semiconductor structure of the utility model first embodiment, including an at least multilayer circuit board 20 and heat-conducting substrate 30, multilayer circuit board 20 and heat-conducting substrate 30 can relative spacing set.
Wherein, heat-conducting substrate 30 may include opposite first surface and second surface, in addition to be connected to first surface and Side between second surface periphery.First surface of the heat-conducting substrate 30 away from multilayer circuit board 20 is provided with some conductive welding disks 31, the second surface of heat-conducting substrate 30 towards multilayer circuit board 20 is provided with some first connection pads 32, is set in heat-conducting substrate 30 There are some first conductive poles 33, the both ends of the first conductive pole 33 extend through the first surface and second surface of heat-conducting substrate 30, Pad 32 is connected with conductive welding disk 31 and first to connect, so as to which conductive welding disk 31 is connected pad by the first conductive pole 33 with first 32 are connected.
Corresponding first connection pad 32, multilayer circuit board 20 are provided with some second connections towards the surface of heat-conducting substrate 30 and welded Disk 21, the second connection pad 21 are connected the connection of pad 32 conducting conductive welding disk 31 and multilayer circuit board 20 with first.Second connection The connection that pad 21 and first is connected between pad 32 can be realized by the mode such as welding or wire connection.
Specifically, if if multilayer circuit board 20 may include base material 22, dried layer conducting channel 23, some second conductive poles 24 and Do external pad 25.Second connection pad 21 is arranged on base material 22 towards on the surface of heat-conducting substrate 30;External pad 25 can be with Base material 22 is arranged on the surface of heat-conducting substrate 30, base material 22 can also be arranged on towards on the surface of heat-conducting substrate 30; Or the external part of pad 25 is arranged on substrate 22 and is arranged on the direction of substrate 22 backwards to the surface of heat-conducting substrate 30, remainder The surface of heat-conducting substrate 30.The conductive pole 24 of conducting channel 23 and second is arranged in base material 22;Second conductive pole 24 and conduction electricity Road 23 electrically connects, and through the surface of base material 22, the second connection pad 21 and external pad 25 is connected respectively, so as to which second connects Pad 21, conducting channel 23, the second conductive pole 24 is connect with external pad 25 to be connected, and then the conductive welding disk on heat-conducting substrate 30 31 by the first conductive pole 33, first connect pad 32, second connect pad 21, the conductive pole 24 of conducting channel 23 and second with External pad 25 is connected.
Multilayer circuit board 20 can be rigidity or flexible copper-clad plate.The material of the base material 22 of multilayer circuit board 20 includes but unlimited In papery, glass cloth, synthetic fibers matter, nonwoven cloth, composite etc..
Heat-conducting substrate 30 can be ceramic wafer, heat conduction plastic plate or metallic plate (such as copper coin or aluminium sheet);Wherein ceramic wafer bag Include but be not limited to aluminum oxide, aluminium nitride, devitrified glass, boron nitride etc..
Conductive welding disk 31 is used for connecting luminous diode 40 and/or light-emitting diode chip for backlight unit, so as to of the present utility model group Type semiconductor structure may also include light emitting diode 40 and/or light-emitting diode chip for backlight unit, can be connected to by modes such as welding On conductive welding disk 31.Certainly, light emitting diode 40 and/or light-emitting diode chip for backlight unit also may not include in Modular, semiconductor structure In.
Further, in some conductive welding disks 31, include positive conductive pad and negative conductive pad, respectively with hair The positive pole of optical diode 40 connects with negative pole;One positive conductive pad and a negative conductive pad form one group and a hair Optical diode 40 connects.Mutually insulated between the different conductive welding disk 31 of polarity, polarity identical conductive welding disk 32 can interconnect after again Pad 32 is connected by the first conductive pole 33 with first to be connected.
Accordingly, some first conductive poles 33 include positive conductive post and negative conductive post, positive conductive post and positive pole Conductive welding disk is connected, and negative conductive post is connected with negative conductive pad.
In some first connection pads 32, include positive pole connection pad and connect pad with negative pole;Positive pole connects pad It is connected with positive conductive post, negative pole connection pad is connected with negative conductive post.Phase between the first different connection pad 32 of polarity Insulation, polarity identical first connects to be connected with the corresponding second connection pad 21 again after pad 32 can interconnect.
In some second connection pads 21, include positive pole connection pad and connect pad with negative pole;Second connection pad 21 positive pole connection pad and the first positive pole connection pad connection for being connected pad 32, the negative pole connection weldering of the second connection pad 21 Disk and the first negative pole connection pad connection for being connected pad 32.Mutually insulated between the second different connection pad 21 of polarity, polarity Identical second connects pad 22 and can interconnected.Polarity identical second is connected after pad 22 interconnects again by multilayer circuit board 20 The second conductive pole 24 be connected with conducting channel 23 conducting.
Connected it is to be appreciated that above-mentioned conductive welding disk 31, first connects pad 32 and second in pad 21, it may be selected One or more carry out the interconnection of same polarity.
In addition, conducting channel 23 also includes positive conductive circuit and negative conductive circuit, the second conductive pole 24 includes Positive conductive post and negative conductive post, external pad 25 include the external pad of positive pole and the external pad of negative pole.
The positive conductive pad of conductive welding disk 31 passes through the positive conductive post of the first conductive pole 33, the first connection pad 32 Positive pole connection pad, the positive pole of the second connection pad 21 connect the positive pole of pad, positive conductive circuit and the second conductive pole 24 Conductive pole is connected with the external pad of positive pole;The negative conductive that the negative conductive pad of conductive welding disk 31 passes through the first conductive pole 33 Post, first connection pad 32 negative pole connection pad, second connection pad 21 negative pole connection pad, negative conductive circuit and The negative conductive post of second conductive pole 24 is connected with the external pad of negative pole.
As shown in figure 3, the Modular, semiconductor structure of the utility model second embodiment, including an at least multilayer circuit board 20 and heat-conducting substrate 30, multilayer circuit board 20 and heat-conducting substrate 30 can relative spacing set.
Wherein, first surface of the heat-conducting substrate 30 away from multilayer circuit board 20 is provided with some conductive welding disks 31, heat-conducting substrate 30 are provided with some first connection pads 32 towards the second surface of multilayer circuit board 20, are led provided with some first in heat-conducting substrate 30 Electric post 33, the both ends of the first conductive pole 33 extend through the first surface and second surface of heat-conducting substrate 30, with conductive welding disk 31 Connect with the first connection pad 32, be connected so as to which conductive welding disk 31 is connected pad 32 by the first conductive pole 33 with first.
Corresponding first connection pad 32, multilayer circuit board 20 are provided with some second connections towards the surface of heat-conducting substrate 30 and welded Disk 21, the second connection pad 21 are connected the connection of pad 32 conducting conductive welding disk 31 and multilayer circuit board 20 with first.Second connection The connection that pad 21 and first is connected between pad 32 can be realized by the mode such as welding or wire connection.
If multilayer circuit board 20 may include base material 22, dried layer conducting channel 23, some second conductive poles 24 and some external Pad 25, specific set refer to above-mentioned first embodiment.
Further, conducting channel 23 includes positive conductive circuit 231 and negative conductive circuit 232;External pad 25 wraps Include the external pad 251 of positive pole and the external pad 252 of negative pole.
Second conductive pole 24 includes some positive conductive posts 241 and some negative conductive posts 242.Wherein, some positive poles are led Electric post 241 can be connected by a positive conductive circuit 231 pad 251 external with positive pole, and the positive conductive circuit 231 is formed altogether Pole conducting channel;Or some negative conductive posts 242 are connected by a negative conductive circuit 232 pad 252 external with negative pole Logical, the negative conductive circuit 23 forms copolar conducting channel.
In the present embodiment, as shown in figure 3, it illustrates some positive conductive posts 241 by a positive conductive circuit 231 with The external pad 251 of one positive pole is connected, some negative conductive posts 242 by some negative conductive circuits 232 respectively with it is some The external pad 252 of negative pole is connected.
The setting of copolar conducting channel, the setting of external pad 25 can be reduced, simplify structure and follow-up conducting connection.
As shown in figure 4, the Modular, semiconductor structure of the utility model 3rd embodiment, including an at least multilayer circuit board 20 and heat-conducting substrate 30, multilayer circuit board 20 and heat-conducting substrate 30 can relative spacing set.
On heat-conducting substrate 30 structure of the setting such as conductive welding disk and multilayer circuit board 20 etc. can refer to above-mentioned first or Second embodiment, it will not be repeated here.
Unlike above-mentioned first, second embodiment:First surface, second surface and/or the side of heat-conducting substrate 30 Provided with an at least thermal conductive zone 34, for connecting heat-conducting piece 50, so as to heat caused by light emitting diode 40, light-emitting diode chip for backlight unit Heat-conducting piece 50 can be transferred to by heat-conducting substrate 30, reach the purpose of radiating.
In the present embodiment, Modular, semiconductor structure also includes heat-conducting piece 50 close-connected with thermal conductive zone 34.Heat-conducting piece 50 include but is not limited to reflow soldering with the close connection implementation of thermal conductive zone 34, thermal conducting agent is Nian Jie, casting die is fixed, screw is tight Gu etc., thermal conductive zone 34 and the junction tight of heat-conducting piece 50, it is ensured that heat-conducting effect.
Heat-conducting piece 50 can use the material of the good heat conductivities such as copper, aluminium to be made.
Alternatively, heat-conducting piece 50 can be loop configuration, be connected to positioned at the side of multilayer circuit board 20 on thermal conductive zone 34. Or as shown in figure 4, in the present embodiment, the periphery of part or all of Modular, semiconductor structure, shape are surrounded in the extension of heat-conducting piece 50 Into heat sink, supporter, housing, and/or radiator.
As shown in figure 5, the Modular, semiconductor structure of the utility model fourth embodiment, including an at least multilayer circuit board 20 and heat-conducting substrate 30, multilayer circuit board 20 and heat-conducting substrate 30 can relative spacing set.
On heat-conducting substrate 30 structure of the setting such as conductive welding disk and multilayer circuit board 20 etc. can refer to above-mentioned first or Second embodiment, it will not be repeated here.
First surface, second surface and/or the side of heat-conducting substrate 30 are provided with an at least thermal conductive zone 34, for connecting heat conduction Part 50, so as to which heat caused by light emitting diode 40, light-emitting diode chip for backlight unit can be transferred to heat-conducting piece 50 by heat-conducting substrate 30, Reach the purpose of radiating.
In the present embodiment, Modular, semiconductor structure also includes heat-conducting piece 50 close-connected with thermal conductive zone 34.
The present embodiment is unlike above-mentioned 3rd embodiment:Heat-conducting piece 50 be fixed on heat sink, housing, supporter, and/or Spreader surface.Therefore, the present embodiment may also include be connected with heat-conducting piece 50 heat sink 60, housing, supporter, and/or radiating Device.
In the present embodiment, heat-conducting piece 50 is loop configuration, is connected to positioned at the side of multilayer circuit board 20 on thermal conductive zone 34. Heat sink 60 surround the periphery of part or all of multilayer circuit board 20;Wherein, heat sink 60 pit 61 is provided with, multilayer circuit board 20 holds Put in pit 61, so as to which heat sink 60 is substantially u-shaped, multilayer circuit board 20 is surrounded wherein.
Heat sink 60 are mainly made of copper;Heat-conducting piece 50 can be made up of materials such as copper, aluminium, and both can be connected by modes such as welding It is connected together.
In addition, in Modular, semiconductor structure of the present utility model, heat-conducting substrate 30 away from multilayer circuit board 20 first Surface can also be provided with some external pads (not shown), and external pad is connected with an at least conductive welding disk 31;And/or heat conduction The second surface of substrate 30 towards multilayer circuit board 20 is provided with some external pads (not shown), external pad and at least one first Connection pad 32 is connected.
Modular, semiconductor structure monolithic conductive good heat conductivity of the present utility model, suitable for various light fixtures, especially It is large-power lamp, and is applied to industrialized manufacture.
With reference to figure 2-5, any Modular, semiconductor in light fixture of the present utility model, including above-mentioned first to fourth implementation Structure.
Further, light fixture may also include radiator.Radiator can with the heat sink of Modular, semiconductor structure, supporter, Housing and/or radiator connection, pass through heat sink, supporter, housing and/or radiator so as to the heat of Modular, semiconductor structure Radiator is delivered to, reaches good radiating effect, it is ensured that normal, the continuous firing of light fixture.
Embodiment of the present utility model is the foregoing is only, not thereby limits the scope of the claims of the present utility model, it is every The equivalent structure or equivalent flow conversion made using the utility model specification and accompanying drawing content, or be directly or indirectly used in Other related technical areas, similarly it is included in scope of patent protection of the present utility model.

Claims (15)

1. a kind of Modular, semiconductor structure, it is characterised in that including at least a multilayer circuit board and heat-conducting substrate;It is described to lead First surface of the hot substrate away from the multilayer circuit board is provided with some conductive welding disks, and the heat-conducting substrate is towards the multilayer wire The second surface of road plate is provided with some first connection pads;It is provided with some first conductive poles in the heat-conducting substrate, described first The both ends of conductive pole extend through the first surface and second surface of the heat-conducting substrate, are connected with the conductive welding disk and first Pad connects;
The multilayer circuit board is provided with some second connection pads, the second connection pad towards the surface of the heat-conducting substrate Pad connection, which is connected, with described first turns on the conductive welding disk and multilayer circuit board.
2. Modular, semiconductor structure according to claim 1, it is characterised in that the multilayer circuit board include base material, If the dried layer conducting channel being arranged in the base material and some second conductive poles, some external welderings of setting on the substrate Disk;The second connection pad is arranged on the base material towards on the surface of the heat-conducting substrate, and the external pad is arranged on The base material is on the surface of the heat-conducting substrate;Second conductive pole electrically connects with the conducting channel, And through the surface of the base material, the second connection pad and external pad are connected respectively.
3. Modular, semiconductor structure according to claim 2, it is characterised in that the conducting channel includes positive conductive Circuit and negative conductive circuit;The external pad includes the external pad of positive pole and the external pad of negative pole;
Second conductive pole includes some positive conductive posts and some negative conductive posts;Some positive conductive posts pass through one The positive conductive circuit is connected with the external pad of the positive pole, or, some negative conductive posts are described negative by one Pole conducting channel is connected with the external pad of the negative pole.
4. Modular, semiconductor structure according to claim 1, it is characterised in that in some conductive welding disks, polarity Mutually insulated between the different conductive welding disks, pass through first conductive pole again after conductive welding disk interconnection described in polarity identical Pad is connected with described first to be connected.
5. Modular, semiconductor structure according to claim 1, it is characterised in that in some first connection pads, Polarity it is different it is described first connection pad between mutually insulate, described in polarity identical first connection interconnected after again with it is corresponding It is described second connection pad be connected.
6. Modular, semiconductor structure according to claim 1, it is characterised in that in some second connection pads, Mutually insulated between different the second connection pad of polarity, the second connection interconnected described in polarity identical.
7. Modular, semiconductor structure according to claim 1, it is characterised in that the heat-conducting substrate is ceramic wafer, led Thermoplastic offset plate or metallic plate;
The multilayer circuit board is rigidity or flexible copper-clad plate.
8. Modular, semiconductor structure according to claim 1, it is characterised in that the heat-conducting substrate is away from the multilayer The first surface of wiring board is provided with some external pads, and the external pad is connected with least one conductive welding disk;With/ Or, the second surface of the heat-conducting substrate towards the multilayer circuit board is provided with some external pads, the external pad with extremely Few one first connection pad is connected.
9. according to the Modular, semiconductor structure described in claim any one of 1-8, it is characterised in that the of the heat-conducting substrate One surface, second surface and/or side are provided with an at least thermal conductive zone.
10. Modular, semiconductor structure according to claim 9, it is characterised in that the Modular, semiconductor structure is also Including with the close-connected heat-conducting piece in the thermal conductive zone.
11. Modular, semiconductor structure according to claim 10, it is characterised in that part is surrounded in the heat-conducting piece extension Or whole peripheries of the Modular, semiconductor structures, formed the heat sink of Modular, semiconductor structure, supporter, housing, And/or radiator.
12. Modular, semiconductor structure according to claim 10, it is characterised in that with the Modular, semiconductor structure The heat-conducting piece being connected is fixed on heat sink, housing, supporter, and/or spreader surface.
13. according to the Modular, semiconductor structure described in claim any one of 1-8, it is characterised in that the combined semi is led Body structure also includes the light emitting diode being connected on the conductive welding disk, and/or light-emitting diode chip for backlight unit.
14. a kind of light fixture, it is characterised in that including the Modular, semiconductor structure described in claim any one of 1-13.
15. light fixture according to claim 14, it is characterised in that the light fixture also includes radiator;The combined semi The heat sink of conductor structure, supporter, housing and/or radiator are connected with the radiator.
CN201720566046.9U 2017-05-19 2017-05-19 Modular, semiconductor structure and light fixture Active CN206864499U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068845A (en) * 2017-05-19 2017-08-18 深圳大道半导体有限公司 Modular, semiconductor structure and light fixture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068845A (en) * 2017-05-19 2017-08-18 深圳大道半导体有限公司 Modular, semiconductor structure and light fixture
CN107068845B (en) * 2017-05-19 2024-03-19 深圳大道半导体有限公司 Combined semiconductor structure and lamp

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