CN206820651U - A kind of booster circuit and new energy resources system based on n level perception active impedance networks - Google Patents
A kind of booster circuit and new energy resources system based on n level perception active impedance networks Download PDFInfo
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- CN206820651U CN206820651U CN201720751595.3U CN201720751595U CN206820651U CN 206820651 U CN206820651 U CN 206820651U CN 201720751595 U CN201720751595 U CN 201720751595U CN 206820651 U CN206820651 U CN 206820651U
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Abstract
The utility model discloses a kind of booster circuit and new energy resources system based on n level perception active impedance networks, including switching tube, storage capacitor, fly-wheel diode and n level perception active impedance networks, wherein, n level perception active impedances network includes a first order inductance boost unit, 2 intergrade inductance boost units of n and n-th grade of inductance boost unit, first order inductance boost unit includes the first inductance, n-th diode and the diodes of 2n 1, kth intergrade inductance boost unit includes the diode of kth 1, kth inductance, the diodes of 2n+k 2 and the diodes of the n-th+k 1, 2≤k≤n 1, n-th grade of inductance boost unit includes the n-th 1 diode and the n-th inductance.The application make it that the resistance to junior diode of stream is chosen in the type selecting of diode can meet to require, on the one hand, reduces cost, on the other hand, the loss of diode is small, improves the efficiency of circuit.
Description
Technical field
Pressure build-up technique field is the utility model is related to, more particularly to a kind of liter based on n level perception active impedance networks
Volt circuit and new energy resources system.
Background technology
With the development of power system, increasing new energy resources system is linked into power network, and new energy resources system is especially
Requirement of the systems such as photovoltaic, fuel cell to Power Electronic Technique also more and more higher.Because photovoltaic, cell of fuel cell have electricity
The characteristics of forcing down, generally require the use that can just be connected to the grid after the DC-DC converter lifting voltage of very high-gain.
The DC-DC converter of the high-gain used in the prior art often uses cascade connection type DC-DC converter or DC-AC
Converter, specifically as depicted in figs. 1 and 2, Fig. 1 are that a kind of structure of n levels perception active impedance network of the prior art is shown
It is intended to, Fig. 2 is the structural representation using the Boost circuit of the active impedance network in Fig. 1.When switch is opened, refer to
Fig. 3, Fig. 3 are the working waveform figure of the Boost circuit shown in Fig. 2, it is seen then that the (n-1)th diode and 2n-1 diodes are removed, should
Other diodes all subject the accumulative of multiple inductive currents in circuit, and size of current is from 2iL-(n-1)iL, so that
Obtain the diode for needing to select resistance to stream higher grade in the type selecting of diode, on the one hand, cost is high, and on the other hand, these two
The loss of pole pipe is also bigger, reduces the efficiency of circuit.
Therefore, how to provide a kind of scheme for solving above-mentioned technical problem is that those skilled in the art need to solve at present
Problem.
Utility model content
The purpose of this utility model is to provide a kind of booster circuit based on n level perception active impedance networks and new energy system
System, on the one hand, reduce cost, on the other hand, the loss of diode is small, improves the efficiency of circuit.
In order to solve the above technical problems, the utility model provides a kind of boosting based on n level perception active impedance networks
Circuit, applied to new energy resources system, the new energy resources system includes dc source and load, the booster circuit include switching tube,
Storage capacitor, fly-wheel diode and n level perception active impedance networks, n >=3, wherein：
The first end of the n levels perception active impedance network is connected with the positive pole of the dc source, and the n levels perception has
Second end of source impedance network is connected with the anode of the fly-wheel diode and the first end of the switching tube respectively, the afterflow
The negative electrode of diode is connected with the first end of the storage capacitor and one end of load respectively, the second end point of the storage capacitor
The second end of the other end, the switching tube and the negative pole of the dc source not with the load are connected；
The n levels perception active impedance network includes a first order inductance boost unit, n-2 intergrade inductance boost
Unit and n-th grade of inductance boost unit, the first order inductance boost unit include the first inductance, the n-th diode and the
2n-1 diodes, kth intergrade inductance boost unit include the diode of kth -1, kth inductance, 2n+k-2 diodes and n-th+
K-1 diodes, 2≤k≤n-1, n-th grade of inductance boost unit include the (n-1)th diode and the n-th inductance；First electricity
The anode of the first end of the sense anode with the first diode, the second diode respectively until the anode of the (n-1)th diode is connected, its
First end of the common port as the n levels perception active impedance network, the second end of first inductance is respectively with described the n-th two
The anode of the anode of pole pipe and the 2n-1 diodes connects, the negative electrodes of the 2n-1 diodes respectively with 2n diodes
Negative electrode, 2n+1 diodes negative electrode until 3n-3 diodes negative electrode and the n-th inductance first end connection, its common port
As the second end of the n levels perception active impedance network, the negative electrode of the negative electrode of n-th diode and first diode
Connection, the negative electrode of the diode of kth -1 is connected with the first end of kth inductance, the second end of the kth inductance respectively with it is described
The anode of the anode of 2n+k-2 diodes and the n-th+k-1 diodes connects, negative electrode and the kth diode of the n-th+k-1 diodes
Negative electrode connection；The negative electrode of (n-1)th diode is connected with the second end of n-th inductance.
Preferably, the inductance value of the first inductance, the inductance value of the second inductance are until the inductance value of the n-th inductance is equal；
The then gain of the booster circuit isWherein, D is the dutycycle of switching tube, and Vs is described
The voltage of dc source, Vout are the output voltage of the booster circuit.
Preferably, the switching tube is NMOS, the first end to drain as the switching tube of the NMOS, described
Second end of the NMOS source electrode as the switching tube.
Preferably, the switching tube is IGBT, the first end of the colelctor electrode of the IGBT as the switching tube, described
Second end of the IGBT emitter stage as the switching tube.
In order to solve the above technical problems, the utility model additionally provides a kind of new energy resources system, including dc source and negative
Carry, in addition to the booster circuit as described above based on n level perception active impedance networks.
Preferably, the dc source is solar panel.
The utility model provides a kind of booster circuit and new energy resources system based on n level perception active impedance networks, bag
Include switching tube, storage capacitor, fly-wheel diode and n level perception active impedance networks, n >=3, wherein, n level perception active impedance nets
The positive pole of the first end of network and dc source connects, the second end of n level perception active impedance networks respectively with fly-wheel diode
The first end of anode and switching tube connects, and the negative electrode of fly-wheel diode connects with the first end of storage capacitor and one end of load respectively
Connect, the negative pole of the second end of the storage capacitor other end with load, the second end of switching tube and dc source respectively is connected；N levels
Perceptual active impedance network includes a first order inductance boost unit, n-2 intergrade inductance boost unit and one n-th grade
Inductance boost unit, first order inductance boost unit include the first inductance, the n-th diode and 2n-1 diodes, kth intergrade
Inductance boost unit includes the diode of kth -1, kth inductance, 2n+k-2 diodes and the n-th+k-1 diodes, 2≤k≤n-1,
N-th grade of inductance boost unit includes the (n-1)th diode and the n-th inductance.
This application provides a kind of booster circuit based on n level perception active impedance networks with brand new, and it is tied
Structure also determines its different course of work from booster voltage of the prior art, compared with prior art, also reduces 2n-
The current stress of 4 diodes, so that the resistance to junior diode of stream is chosen in the type selecting of diode to be met
It is required that, on the one hand, cost is reduced, on the other hand, the loss of diode is small, improves the efficiency of circuit.
Brief description of the drawings
, below will be to prior art and embodiment in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
In the required accompanying drawing used be briefly described, it should be apparent that, drawings in the following description are only of the present utility model
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other accompanying drawings.
Fig. 1 is a kind of structural representation of n levels perception active impedance network of the prior art；
Fig. 2 is the structural representation using the Boost circuit of the active impedance network in Fig. 1；
Fig. 3 is the working waveform figure of the Boost circuit shown in Fig. 2；
Fig. 4 is a kind of structural representation of the booster circuit based on n level perception active impedance networks provided by the utility model
Figure；
Fig. 5 is a kind of structural representation of the booster circuit based on 4 grades of perceptual active impedance networks provided by the utility model
Figure；
When Fig. 6 opens for switching tube, the fundamental diagram of the booster circuit shown in Fig. 4；
When Fig. 7 is that switching tube turns off, the fundamental diagram of the booster circuit shown in Fig. 4；
Fig. 8 is the working waveform figure of the booster circuit shown in Fig. 4.
Embodiment
Core of the present utility model is to provide a kind of booster circuit based on n level perception active impedance networks and new energy system
System, on the one hand, reduce cost, on the other hand, the loss of diode is small, improves the efficiency of circuit.
It is new below in conjunction with this practicality to make the purpose, technical scheme and advantage of the utility model embodiment clearer
Accompanying drawing in type embodiment, the technical scheme in the embodiment of the utility model is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model part of the embodiment, rather than whole embodiments.Based on the implementation in the utility model
Example, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, is belonged to
The scope of the utility model protection.
Fig. 4 and Fig. 5 are refer to, wherein, Fig. 4 is that one kind provided by the utility model is based on n level perception active impedance networks
Booster circuit structural representation, Fig. 5 is a kind of boosting based on 4 grades of perceptual active impedance networks provided by the utility model
The structural representation of circuit；The booster circuit is applied to new energy resources system, and new energy resources system includes dc source VsWith load R,
The booster circuit includes switching tube Q, storage capacitor C, sustained diode3n-2And n level perception active impedance networks, n >=3, its
In：
The first end of n level perception active impedance networks and dc source VsPositive pole connection, n level perception active impedance networks
The second end respectively with sustained diode3n-2Anode and switching tube Q first end connection, sustained diode3n-2Negative electrode point
Not with storage capacitor C first end and loading R one end and be connected, storage capacitor C the second end respectively the other end with load R,
Switching tube Q the second end and dc source VsNegative pole connection；
N level perception active impedances network includes a first order inductance boost unit, n-2 intergrade inductance boost unit
And n-th grade of inductance boost unit, first order inductance boost unit include the first inductance L1, the n-th diode DnWith 2n-1 bis-
Pole pipe D2n-1, kth intergrade inductance boost unit includes the diode of kth -1 Dk-1, kth inductance Lk, 2n+k-2 diodes D2n+k-2
And n-th+k-1 diodes the Dn+k-1, 2≤k≤n-1, n-th grade of inductance boost unit include the (n-1)th diode Dn-1And the n-th inductance Ln；
First inductance L1First end respectively with the first diode D1Anode, the anode of the second diode is until the (n-1)th diode Dn-1
Anode connection, first end of its common port as n level perception active impedance networks, the first inductance L1The second end respectively with
N diodes DnAnode and 2n-1 diodes D2n-1Anode connection, 2n-1 diodes D2n-1Negative electrode respectively with 2n bis-
Pole pipe D2nNegative electrode, 2n+1 diodes D2n+1Negative electrode until 3n-3 diodes D3n-3Negative electrode and the n-th inductance LnFirst
End connection, second end of its common port as n level perception active impedance networks, the n-th diode DnNegative electrode and the first diode D1
Negative electrode connection, the diode of kth -1 Dk-1Negative electrode and kth inductance LkFirst end connection, kth inductance LkThe second end respectively with
2n+k-2 diodes D2n+k-2Anode and the n-th+k-1 diodes Dn+k-1Anode connection, the n-th+k-1 diodes Dn+k-1The moon
Pole and kth diode DkNegative electrode connection；(n-1)th diode Dn-1Negative electrode and the n-th inductance LnThe second end connection.
Specifically, the booster circuit based on n level perception active impedance networks provided for the application, different from traditional
Circuit structure also determines that it is different from the course of work of traditional circuit, refer to Fig. 6 and Fig. 7, wherein, Fig. 6 opens for switching tube
When logical, the fundamental diagram of the booster circuit shown in Fig. 4, when Fig. 7 is that switching tube turns off, the work of the booster circuit shown in Fig. 4
Schematic diagram；Its course of work is described with reference to the structure of booster circuit provided herein：
Specifically, when switching tube Q is opened, the 2n-1 diodes D in first order inductance boost unit2n-1, intergrade
The diode of kth -1 D in inductance boost unitk-1With 2n+k-2 diodes D2n+k-2, in n-th grade of inductance boost unit n-th-
1 diode Dn-1Turn on, the n-th diode D in first order inductance boost unitn, the n-th+k- in intergrade inductance boost unit
1 diode Dn+k-1And sustained diode3n-2Shut-off.First inductance L in first order inductance boost unit1Pass through Vs-L1-D2n-1-Q
Path charges, the first inductance L1Electric current is linearly increasing, and kth inductance passes through V in intergrade inductance boost units-Dk-1-Lk-
D2n+k-2- Q channel charges, and the electric current of kth inductance is linearly increasing, the n-th inductance L in n-th grade of inductance boost unitnPass through Vs-
Dn-1-Ln- Q channel charges, the n-th inductance LnElectric current it is linearly increasing, per one-level boosting unit in the diode that turns on only be subjected to
This grade of inductive current, current stress are only the 1/n of total current, and now, storage capacitor C provides energy for load R.If inductance value
L1==Lk==Ln, then inductive currentThen first order inductance boost
2n-1 diodes D in unit2n-1, the diode of kth -1 D in intergrade inductance boost unitk-1With 2n+k-2 diodes
D2n+k-2, the (n-1)th diode D in n-th grade of inductance boost unitn-1The electric current of conductingIn first order inductance boost unit
The n-th diode Dn, the n-th+k-1 diodes D in intergrade inductance boost unitn+k-1Electric current
When switching tube Q is turned off, the n-th diode D in first order inductance boost unitn, intergrade inductance boost unit
In the n-th+k-1 diodes Dn+k-1And sustained diode3n-2Turn on, the 2n-1 diodes in first order inductance boost unit
D2n-1, the diode of kth -1 D in intergrade inductance boost unitk-1With 2n+k-2 diodes D2n+k-2, n-th grade of inductance boost
The (n-1)th diode D in unitn-1Shut-off.All pass through V per the inductance in one-level inductance boost units-L1-Dn-…-Lk-
Dn+k-1-…-Ln-D3n-2- C//R paths discharge, and provide energy, inductance L to load R1…、Lk、…、LnElectric current linearly subtract
It is small.If inductance value L1==Lk==Ln, then inductive currentThen
2n-1 diodes D in one-level inductance boost unit2n-1, the diode of kth -1 D in intergrade inductance boost unitk-1With
2n+k-2 diodes D2n+k-2, the (n-1)th diode D in n-th grade of inductance boost unitn-1Electric currentIn first order inductance boost unit
N-th diode Dn, the n-th+k-1 diodes D in intergrade inductance boost unitn+k-1Electric current
Specifically, Fig. 8 is refer to, Fig. 8 is the working waveform figure of the booster circuit shown in Fig. 4.It can be seen that with traditional boosting
The (n-1)th diode D is removed in circuitn-1With 2n-1 diodes D2n-1It is solely subjected to an inductive current to compare, is ensureing in the application
While high-gain, when switching tube Q is turned on, the electric current for also additionally reducing 3n-3- (n-1) -2=2n-4 diodes should
Power, it can meet so that the booster circuit in the application when choosing diode, chooses the resistance to junior diode of stream
It is required that, on the one hand, cost is reduced, on the other hand, the loss of diode is small, improves the efficiency of circuit, has stronger reality
With property and economy.
This application provides a kind of booster circuit based on n level perception active impedance networks with brand new, and it is tied
Structure also determines its different course of work from booster voltage of the prior art, compared with prior art, also reduces 2n-
The current stress of 4 diodes, so that the resistance to junior diode of stream is chosen in the type selecting of diode to be met
It is required that, on the one hand, cost is reduced, on the other hand, the loss of diode is small, improves the efficiency of circuit.
As a kind of preferred embodiment, the first inductance L1Inductance value, the inductance value of the second inductance is until the n-th inductance Ln
Inductance value it is equal；
The then gain of booster circuit isWherein, D is switching tube Q dutycycle, and Vs is described straight
The voltage of power supply is flowed, Vout is the output voltage of the booster circuit.
Specifically, the application is not particularly limited for the value of inductance, is determined according to actual conditions.
Work as L1==Lk==LnWhen, it is assumed here that switching tube Q dutycycle is D.In a cycle
Interior, the output voltage of booster circuit is Vout, draw following voltage gain derivation：
It is linearly increasing per the inductive current in one-level inductance boost unit when switch Q is opened, and it is added in every one-level inductance two
The voltage at end is：
When switching Q shut-offs, linearly reduce per the inductive current in one-level inductance boost unit, and be added in every one-level inductance two
The voltage at end is：
For inductance L1、L2、···、Ln, can be obtained by " voltage-second balance " theorem：
I.e.：
nVs×DT+(Vs-Vout) × (1-D) T=0
Solve：
As a kind of preferred embodiment, switching tube Q is NMOS, the first end of NMOS drain electrode as switching tube Q,
Second end of the NMOS source electrode as switching tube Q.
As a kind of preferred embodiment, switching tube Q is IGBT, the first end of IGBT colelctor electrode as switching tube Q,
Second end of the IGBT emitter stage as switching tube Q.
Specifically, in actual applications, if the electric current in boosting is very big, switching tube Q here can also be by multiple
NMOS modules in parallel NMOS, or for by IGBT module in parallel multiple IGBT.
In addition, switching tube Q here is also an option that other kinds of switching tube, the application does not do special limit herein
It is fixed, determined according to actual conditions.
The utility model additionally provides a kind of new energy resources system, including dc source and load, in addition to base described above
In the booster circuit of n level perception active impedance networks.
As a kind of preferred embodiment, dc source is solar panel.
In addition, dc source here can also be other kinds of dc source, such as fuel cell etc., the application exists
This is not particularly limited.
In addition, a kind of introduction of the new energy resources system provided for the application refer to above-described embodiment, the application is herein
Repeat no more.
It should be noted that in this manual, such as first and second or the like relational terms are used merely to one
Individual entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operate it
Between any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Cover including for nonexcludability, so that process, method, article or equipment including a series of elements not only include those
Key element, but also the other element including being not expressly set out, or also include for this process, method, article or set
Standby intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element in the process including the key element, method, article or equipment also be present.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (6)
1. a kind of booster circuit based on n level perception active impedance networks, applied to new energy resources system, the new energy resources system bag
Include dc source and load, it is characterised in that the booster circuit includes switching tube, storage capacitor, fly-wheel diode and n levels perception
Active impedance network, n >=3, wherein：
The first end of the n levels perception active impedance network is connected with the positive pole of the dc source, the active resistance of the n levels perception
Second end of anti-network is connected with the anode of the fly-wheel diode and the first end of the switching tube respectively, the pole of afterflow two
The negative electrode of pipe is connected with the first end of the storage capacitor and one end of load respectively, the second end of the storage capacitor respectively with
The negative pole connection of the other end of the load, the second end of the switching tube and the dc source；
The n levels perception active impedance network includes a first order inductance boost unit, n-2 intergrade inductance boost unit
And n-th grade of inductance boost unit, the first order inductance boost unit include the first inductance, the n-th diode and 2n-1
Diode, kth intergrade inductance boost unit include the diode of kth -1, kth inductance, 2n+k-2 diodes and the n-th+k-1 two
Pole pipe, 2≤k≤n-1, n-th grade of inductance boost unit include the (n-1)th diode and the n-th inductance；The of first inductance
The anode of one end anode with the first diode, the second diode respectively is until the anode of the (n-1)th diode is connected, its common port
As the first end of the n levels perception active impedance network, the second end of first inductance respectively with n-th diode
The anode of anode and the 2n-1 diodes connects, the negative electrodes of 2n-1 diodes the moon with 2n diodes respectively
Pole, the negative electrode of 2n+1 diodes are until the first end connection of the negative electrode and the n-th inductance of 3n-3 diodes, its common port conduct
Second end of the n levels perception active impedance network, the negative electrode of the negative electrode of n-th diode and first diode connect
Connect, the negative electrode of the diode of kth -1 is connected with the first end of kth inductance, and the second end of the kth inductance is respectively with described
The anode of the anode of 2n+k-2 diodes and the n-th+k-1 diodes connects, negative electrode and the kth diode of the n-th+k-1 diodes
Negative electrode connects；The negative electrode of (n-1)th diode is connected with the second end of n-th inductance.
2. the booster circuit as claimed in claim 1 based on n level perception active impedance networks, it is characterised in that the first inductance
Inductance value, the inductance value of the second inductance until the n-th inductance inductance value it is equal；
The then gain of the booster circuit isWherein, D is the dutycycle of switching tube, and Vs is the direct current
The voltage of power supply, Vout are the output voltage of the booster circuit.
3. the booster circuit as claimed in claim 1 or 2 based on n level perception active impedance networks, it is characterised in that described to open
It is NMOS to close pipe, and the first end to drain as the switching tube of the NMOS, the source electrode of the NMOS is as the switch
Second end of pipe.
4. the booster circuit according to claim 1 or 2 based on n level perception active impedance networks, it is characterised in that described
Switching tube is IGBT, and the first end of the colelctor electrode of the IGBT as the switching tube, the emitter stage of the IGBT is as institute
State the second end of switching tube.
5. a kind of new energy resources system, including dc source and load, it is characterised in that also include such as any one of claim 1-4
The described booster circuit based on n level perception active impedance networks.
6. new energy resources system according to claim 5, it is characterised in that the dc source is solar panel.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107086776A (en) * | 2017-06-26 | 2017-08-22 | 广东工业大学 | A kind of booster circuit and new energy resources system based on n grades of perceptual active impedance networks |
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| CN107086776A (en) * | 2017-06-26 | 2017-08-22 | 广东工业大学 | A kind of booster circuit and new energy resources system based on n grades of perceptual active impedance networks |
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