CN105939126A - Switch inductor type hybrid quasi-Z-source inverter - Google Patents
Switch inductor type hybrid quasi-Z-source inverter Download PDFInfo
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- CN105939126A CN105939126A CN201610508676.0A CN201610508676A CN105939126A CN 105939126 A CN105939126 A CN 105939126A CN 201610508676 A CN201610508676 A CN 201610508676A CN 105939126 A CN105939126 A CN 105939126A
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- 238000010586 diagram Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a switch inductor type hybrid quasi-Z-source inverter. The inverter comprises a voltage source, a switch inductor unit which consists of a first inductor, a second inductor, a fourth diode, a fifth diode and a sixth diode, a switch voltage-boosting unit which consists of a first capacitor, a first diode, a second diode and an MOS transistor S, a quasi-Z-source unit which consists of a third inductor, a second capacitor, a third capacitor and a third diode, a three-phase inverter bridge, an output filtering inductor, a filtering capacitor and a load. The overall circuit combines the single-level voltage-boosting/voltage-bucking characteristics of each of the voltage-boosting unit and the quasi-Z-source unit as well as the characteristic of the parallel charge and series discharge of the switch capacitor, and has a higher output voltage gain; the output and the input are common-grounded, so that the voltage stress of the switching device in the inverter bridge is reduced; and in addition, the circuit is free of starting impact current and impact current in the switch-on moment of the switching tube.
Description
Technical field
The present invention relates to Power Electronic Circuit technical field, be specifically related to a kind of switched inductors type and mix quasi-Z-source inverter
Circuit.
Background technology
In fuel cell power generation, photovoltaic generation, due to single solaode or single fuel cell provide straight
Stream voltage is relatively low, it is impossible to meets the need for electricity of existing electrical equipment, can not meet grid-connected demand, generally requires multiple
Battery is together in series the voltage reaching required.On the one hand this method greatly reduces the reliability of whole system, on the other hand
Also need to solve series average-voltage problem.For this reason, it may be necessary to can be high-tension high-gain converter circuit low voltage transition.The most several
The Z source booster converter that year proposes is a kind of high-gain converter circuit, but this circuit has higher impedance network electric capacity electricity
Compressive stress, source current is discontinuous, exports and inputs the most altogether, and there is the biggest inrush current problem during circuit start,
Limit the application in practice of this circuit.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, it is provided that it is inverse that a kind of switched inductors type mixes quasi-Z source
Becoming device circuit, concrete technical scheme is as follows.
A kind of switched inductors type mixes quasi-Z-source inverter circuit, including voltage source, switched inductors unit, boost switching list
Z source unit first, quasi-, three phase inverter bridge, output inductor, filter capacitor and AC threephase load.Described switched inductors list
Unit is made up of the first inductance, the second inductance, the 4th diode, the 5th diode and the 6th diode；Described boost switching unit
It is made up of the first electric capacity, the first diode, metal-oxide-semiconductor S and the second diode；Described quasi-Z source unit is by the 3rd inductance, the second electricity
Appearance, the 3rd electric capacity and the 3rd diode are constituted.
Above-mentioned a kind of switched inductors type mixes in quasi-Z-source inverter circuit, the positive pole of described voltage source and the first inductance
The anode of one end and the 4th diode connects；The negative electrode of described 4th diode is electric with the negative electrode of the 5th diode and second respectively
One end of sense connects；The other end of described first inductance connects with the anode of the 5th diode and the anode of the 6th diode respectively
Connect；The negative electrode of described 6th diode respectively with the other end, the anode of the first diode and the drain electrode of metal-oxide-semiconductor S of the second inductance
Connect；The source electrode of described metal-oxide-semiconductor S is connected with the anode of the second diode and the negative pole of the first electric capacity respectively；Described one or two pole
The negative electrode of pipe anode with positive pole, the negative pole of the 3rd electric capacity and the 3rd diode of the first electric capacity respectively is connected；Described 3rd 2
The negative electrode of pole pipe is connected with the positive pole of the second electric capacity and one end of the 3rd inductance respectively；The positive pole of described 3rd electric capacity is respectively with
The other end of three inductance and the positive ends of three phase inverter bridge connect；The negative pole of described voltage source respectively with the moon of the second diode
Pole, the second electric capacity negative pole and three phase inverter bridge negative polarity end connect.
Compared with prior art, circuit of the present invention has the advantage that and technique effect: circuit output voltage of the present invention increases
Benefit is higher, reduces the voltage stress of inverter bridge breaker in middle device；Inrush current had good inhibiting effect, reliably
Property improve；And output is with input altogether, thus it is more suitably applied to the generation of electricity by new energy skill such as fuel cell power generation and photovoltaic generation
Art field.
Accompanying drawing explanation
Fig. 1 is that a kind of switched inductors type in the specific embodiment of the invention mixes quasi-Z-source inverter circuit.
Fig. 2 is the simple equivalent circuit that the quasi-Z-source inverter of mixing of a kind of switched inductors type shown in Fig. 1 carries out model analysis.
Fig. 3 a, Fig. 3 b are that shown in Fig. 1, a kind of switched inductors type quasi-Z-source inverter of mixing leads directly at its three phase inverter bridge respectively
Time and non-straight-through time equivalent circuit diagram.
Fig. 4 a is sensitizing factor curve and the switched inductors Z-source inverter of circuit of the present invention, based on diode two grades expansion
Quasi-Z-source inverter and the sensitizing factor curve comparison diagram of traditional Z source inventer.
Fig. 4 b is the graph of relation of the index of modulation M and AC output voltage gain G of four kinds of inverters.
Fig. 4 c is the comparison diagram of four kinds of inverter breaker in middle device voltage stress.
Fig. 4 d is with Vi=20V, gives circuit direct side of the present invention as a example by straight-through dutycycle D=0.2 relevant with AC
The simulation result figure of variable.
Detailed description of the invention
Technical scheme is explained in detail by above content, below in conjunction with concrete to the present invention of accompanying drawing
Enforcement is further described.
With reference to Fig. 1, a kind of switched inductors type of the present invention mixes quasi-Z-source inverter circuit, and it includes voltage source Vi、
Switched inductors unit, boost switching unit, quasi-Z source network, three phase inverter bridge, output inductor, filter capacitor and three are relative
Claim load.Described switched inductors unit is by the first inductance L1, the second inductance L2, the 4th diode D4, the 5th diode D5With the 6th
Diode D6Constitute；Described boost switching unit is by the first electric capacity C1, the first diode D1, metal-oxide-semiconductor S and the second diode D2Structure
Become；Described quasi-Z source network is by the 3rd inductance L3, the second electric capacity C2, the 3rd electric capacity C3With the 3rd diode D3Constitute.Work as inverter bridge
Lead directly to and (be equivalent to S1Guan Bi) simultaneously metal-oxide-semiconductor S conducting time, described first diode D1, the second diode D2, the 3rd diode D3
With the 5th diode D5It is turned off, the 4th diode D4With the 6th diode D6Conducting, three phase inverter bridge AC load short circuits.
Second electric capacity C2To the 3rd inductance L3Charging；Described voltage source ViWith the first electric capacity C1With the 3rd electric capacity C3Together in parallel first
Inductance L1With the second inductance L2Charging energy-storing.Straight-through (S is equivalent to when inverter bridge is non-1Turn off) simultaneously metal-oxide-semiconductor S turn off time, inverter bridge
AC load accesses main circuit.Described first diode D1, the second diode D2, the 3rd diode D3With the 5th diode D5
It is both turned on, the 4th diode D4With the 6th diode D6Turn off.Described voltage source ViWith the first inductance L1With the second inductance L2Together
To the first electric capacity C in parallel1With the second electric capacity C2Charging energy-storing, forms loop；3rd inductance L3With the 3rd electric capacity C3Parallel connection, shape
Become loop；Meanwhile, voltage source ViWith the first inductance L1, the second inductance L2With the 3rd inductance L3Given by three phase inverter bridge together and hand over
Stream lateral load is powered.Whole circuit structure is simple, has higher output voltage gain, exports and input commonly, and circuit is not
There is starting current impact and switching tube opens the current impact of moment.
The concrete connection of circuit of the present invention is as follows: the positive pole of described voltage source and one end of the first inductance and the 4th diode
Anode connect；The negative electrode of described 4th diode is connected with the negative electrode of the 5th diode and one end of the second inductance respectively；Institute
The other end stating the first inductance is connected with the anode of the 5th diode and the anode of the 6th diode respectively；Described 6th diode
Negative electrode drain electrode with the other end, the anode of the first diode and the metal-oxide-semiconductor S of the second inductance respectively be connected；Described metal-oxide-semiconductor S's
Source electrode is connected with the anode of the second diode and the negative pole of the first electric capacity respectively；The negative electrode of described first diode is respectively with first
The anode of the positive pole of electric capacity, the negative pole of the 3rd electric capacity and the 3rd diode connects；The negative electrode of described 3rd diode is respectively with
The positive pole of two electric capacity and one end of the 3rd inductance connect；The positive pole of described 3rd electric capacity respectively with the other end of the 3rd inductance and
The positive ends of three phase inverter bridge connects；The negative pole of described voltage source respectively with the negative electrode of the second diode, the second electric capacity negative
The negative polarity end of pole and three phase inverter bridge connects.
Fig. 3 a, Fig. 3 b give the process chart of circuit of the present invention.Fig. 3 a, Fig. 3 b are that inverter bridge is straight-through and non-straight respectively
The equivalent circuit diagram of logical period.Having the part that electric current flows through during solid line represents changer in figure, dotted line represents in changer without electricity
The part that stream flows through.
The work process of the present invention is as follows:
In the stage 1, (be equivalent to S as Fig. 3 a: inverter bridge is straight-through1Guan Bi) simultaneously metal-oxide-semiconductor S conducting time, described first diode
D1, the second diode D2, the 3rd diode D3With the 5th diode D5It is turned off, the 4th diode D4With the 6th diode D6Lead
Logical, three phase inverter bridge AC load short circuits.Circuit forms two loops, respectively: the second electric capacity C2To the 3rd inductance L3Fill
Electricity, forms loop；Voltage source ViWith the first electric capacity C1With the 3rd electric capacity C3Together to the first inductance L in parallel1With the second inductance L2
Charging energy-storing, forms loop.
In the stage 2, as non-in Fig. 3 b: inverter bridge leading directly to (is equivalent to S1Turn off) simultaneously metal-oxide-semiconductor S turn off time, inverter bridge AC
Load accesses main circuit.Described first diode D1, the second diode D2, the 3rd diode D3With the 5th diode D5It is both turned on,
4th diode D4With the 6th diode D6Turn off.Circuit forms four loops, respectively: described voltage source ViWith the first inductance
L1With the second inductance L2Together to the first electric capacity C in parallel1With the second electric capacity C2Charging energy-storing, forms loop；3rd inductance L3With
3rd electric capacity C3Parallel connection, forms loop；Meanwhile, voltage source ViWith the first inductance L1, the second inductance L2With the 3rd inductance L3Lead to together
Cross three phase inverter bridge to AC load supplying.
To sum up situation, when inverter bridge leads directly to metal-oxide-semiconductor S conducting, when inverter bridge non-straight-through time metal-oxide-semiconductor S turn off.Therefore set
The straight-through dutycycle of inverter bridge is D, then the conducting dutycycle of metal-oxide-semiconductor S is similarly D, and the configuration switch cycle is Ts.And set VL1With
VL2And VL3It is respectively the first inductance L1, the second inductance L2With the 3rd inductance L3The voltage at two ends, VC1、VC2And VC3It is respectively first
Electric capacity C1, the second electric capacity C2With the 3rd electric capacity C3Voltage, VSFor the voltage between metal-oxide-semiconductor S drain electrode and source electrode, VPNFor inverter bridge
Direct current side chain voltage.After inverter enters steady operation, draw following voltage relationship derivation.
Stage 1: inverter bridge is straight-through (is equivalent to S1Guan Bi) during metal-oxide-semiconductor conducting simultaneously, corresponding equivalent circuit diagram 3a institute
Show therefore there is an equation below:
VL1_on=VL2_on=Vi+VC1+VC3 (1)
VL3_on=VC2 (2)
VS=VPN=0 (3)
The straight-through time of inverter bridge and the ON time of metal-oxide-semiconductor S are DTs。
Stage 2: non-the leading directly to of inverter bridge (is equivalent to S1Turn off) during metal-oxide-semiconductor S turns off simultaneously, corresponding equivalent circuit such as figure
Shown in 3b, therefore there is an equation below:
VL1_off+VL2_off=Vi-VC1 (4)
VL3_off=-VC3 (5)
VC1=VC2 (6)
VS=VC1 (7)
VPN=VC1+VC3 (8)
The turn-off time of inverter bridge non-straight-through time and metal-oxide-semiconductor S is (1-D) Ts。
Analyze, to the first inductance L according to above1, the second inductance L2With the 3rd inductance L3Use inductance Flux consumption conservation respectively
Principle, simultaneous formula (1), formula (2), formula (4) and formula (5) can obtain:
Vi+(2D-1)VC1+DVC3=(1-D) VL2_off (9)
Vi+(2D-1)VC1+DVC3=(1-D) VL1_off (10)
DVC2=(1-D) VC3 (11)
Thus, simultaneous formula (6), formula (7), formula (8), formula (9), formula (10) and formula (11) can draw the first electric capacity C1Voltage
VC1With the second electric capacity C2Voltage VC2Voltage source ViBetween relational expression be:
3rd electric capacity C3Voltage VC3With supply voltage ViRelational expression be:
Voltage between the drain-source pole at metal-oxide-semiconductor S two ends is:
Inverter bridge direct current side chain voltage VPNFor:
Sensitizing factor (Boost Factor) B of inverter circuit the most of the present invention is:
Corresponding AC output voltage gain G is:
G=MB=(0～∞) (17)
The sensitizing factor curve of circuit the most of the present invention and switched inductors Z-source inverter, based on diode two
The quasi-Z-source inverter of level expansion and the sensitizing factor curve comparison diagram of traditional Z source inventer；Figure includes circuit of the present invention
Sensitizing factor curve, the sensitizing factor curve of switched inductors Z-source inverter, the quasi-Z-source inverter expanded based on diode two grades
Sensitizing factor curve, and the sensitizing factor curve of traditional Z source inventer.As seen from the figure, circuit of the present invention does not surpasses in dutycycle D
In the case of crossing 0.26, sensitizing factor B just can reach the biggest, hence it is evident that higher than the sensitizing factor of other inverter topologies,
And dutycycle D of circuit of the present invention is not over 0.26.
Fig. 4 b is the graph of relation of the index of modulation M and AC output voltage gain G of four kinds of inverters, as seen from the figure
In the case of having identical AC output voltage gain G, circuit of the present invention can be used than other three kinds of inverter circuits
To bigger index of modulation M, inverter is modulated, and then improves the DC voltage utilization rate of inverter, improve exchange
The quality of side output voltage waveforms.
Fig. 4 c is the comparison of four kinds of inverter breaker in middle device voltage stress, opens in circuit inverter bridge the most of the present invention
The voltage stress closing device will be little than other three kinds of inverter topologies, and then reduces the cost price using switching device
With.
Fig. 4 d is with Vi=20V, gives circuit direct side of the present invention as a example by straight-through dutycycle D=0.2 relevant with AC
The simulation result of variable.During D=0.2, sensitizing factor B=5, inverter bridge DC-link voltage VPN=B*Vi=100V, capacitance voltage
VC1=VC3=80V, VC2=20V, the voltage VS=80V at switch S two ends.Additionally, Fig. 4 d gives inductive current iL1,iL2
And iL3Waveform, AC output phase voltage VphaseWith output line voltage VlineWaveform, and three-phase symmetrical ohmic load two
Terminal voltage VRLWaveform.
In sum, circuit of the present invention has higher output voltage gain, exports and inputs commonly, reduces inverter bridge
The voltage stress of breaker in middle device, and there is not inrush current in circuit and switching tube opens the dash current of moment.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not by described embodiment
Limit, the change made under other any spirit without departing from the present invention and principle, modify, substitute, combine, simplify,
All should be the substitute mode of equivalence, within being included in protection scope of the present invention.
Claims (3)
1. a switched inductors type mixes quasi-Z-source inverter circuit, it is characterised in that include voltage source (Vi), switched inductors unit,
Boost switching unit, quasi-Z source unit, three phase inverter bridge, output inductor, filter capacitor and three phase symmetry load；Described open
Close inductance unit by the first inductance (L1), the second inductance (L2), the 4th diode (D4), the 5th diode (D5) and the six or two pole
Pipe (D6) constitute；Described boost switching unit is by the first electric capacity (C1), the first diode (D1), metal-oxide-semiconductor (S) and the second diode
(D2) constitute；Described quasi-Z source unit is by the 3rd inductance (L3), the second electric capacity (C2), the 3rd electric capacity (C3) and the 3rd diode (D3)
Constitute.
A kind of switched inductors type the most according to claim 1 mixes quasi-Z-source inverter circuit, it is characterised in that described voltage
Source (Vi) positive pole and the first inductance (L1) one end and the 4th diode (D4) anode connect；Described 4th diode (D4)
Negative electrode respectively with the 5th diode (D5) negative electrode and the second inductance (L2) one end connect；Described first inductance (L1) another
One end respectively with the 5th diode (D5) anode and the 6th diode (D6) anode connect；Described 6th diode (D6)
Negative electrode respectively with the second inductance (L2) the other end, the first diode (D1) anode and metal-oxide-semiconductor (S) drain electrode connect；Described
The source electrode of metal-oxide-semiconductor (S) respectively with the second diode (D2) anode and the first electric capacity (C1) negative pole connect；Described one or two pole
Pipe (D1) negative electrode respectively with the first electric capacity (C1) positive pole, the 3rd electric capacity (C3) negative pole and the 3rd diode (D3) anode
Connect；Described 3rd diode (D3) negative electrode respectively with the second electric capacity (C2) positive pole and the 3rd inductance (L3) one end connect；
Described 3rd electric capacity (C3) positive pole respectively with the 3rd inductance (L3) the other end and three phase inverter bridge positive ends connect；Institute
State voltage source (Vi) negative pole respectively with the second diode (D2) negative electrode, (the C of the second electric capacity2) negative pole and three phase inverter bridge
Negative polarity end connect.
A kind of switched inductors type the most according to claim 1 mixes quasi-Z-source inverter circuit, it is characterised in that when three contraries
When becoming bridge arm direct pass AC load short circuits metal-oxide-semiconductor (S) conducting simultaneously of bridge, described first diode (D1), the second diode
(D2), the 3rd diode (D3) and the 5th diode (D5) be turned off, the 4th diode (D4) and the 6th diode (D6) conducting, the
Two electric capacity (C2) to the 3rd inductance (L3) charging；Described voltage source (Vi) and the first electric capacity (C1) and the 3rd electric capacity (C3) together to also
First inductance (L of connection1) and the second inductance (L2) charging energy-storing；Connect into AC load when the brachium pontis of three phase inverter bridge is non-straight
When metal-oxide-semiconductor (S) turns off simultaneously, described first diode (D1), the second diode (D2), the 3rd diode (D3) and the five or two pole
Pipe (D5) be both turned on, the 4th diode (D4) and the 6th diode (D6) turn off, described voltage source (Vi) and the first inductance (L1) and
Second inductance (L2) together to the first electric capacity (C in parallel1) and the second electric capacity (C2) charging energy-storing, form loop；3rd inductance
(L3) and the 3rd electric capacity (C3) in parallel, form loop；Meanwhile, voltage source (Vi) and the first inductance (L1), the second inductance (L2) and the
Three inductance (L3) pass through three phase inverter bridge together to AC load supplying.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134942A (en) * | 2017-06-16 | 2017-09-05 | 华南理工大学 | A kind of quasi- Z-source inverter of active switch capacitor |
| CN107565814A (en) * | 2017-09-30 | 2018-01-09 | 华南理工大学 | A kind of quasi- Z source switch boosting inverters of high-gain suitable for fuel cell power generation |
| CN111865129A (en) * | 2020-07-09 | 2020-10-30 | 南京航空航天大学 | Four-switch single-phase single-stage type switch boosting inverter |
| CN112054707A (en) * | 2020-08-12 | 2020-12-08 | 中国科学院电工研究所 | Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor |
| WO2022139435A1 (en) * | 2020-12-22 | 2022-06-30 | 한국과학기술원 | Load driving device |
| CN115800734A (en) * | 2023-02-08 | 2023-03-14 | 浙江日风电气股份有限公司 | Single-stage second-order boost inverter, boost method, device, equipment and medium |
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| CN105529918A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | High-gain Trans-Z source boost converter |
| CN205847124U (en) * | 2016-06-30 | 2016-12-28 | 华南理工大学 | A kind of switched inductors type mixes quasi-Z-source inverter |
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| CN107134942A (en) * | 2017-06-16 | 2017-09-05 | 华南理工大学 | A kind of quasi- Z-source inverter of active switch capacitor |
| CN107565814A (en) * | 2017-09-30 | 2018-01-09 | 华南理工大学 | A kind of quasi- Z source switch boosting inverters of high-gain suitable for fuel cell power generation |
| CN111865129A (en) * | 2020-07-09 | 2020-10-30 | 南京航空航天大学 | Four-switch single-phase single-stage type switch boosting inverter |
| CN112054707A (en) * | 2020-08-12 | 2020-12-08 | 中国科学院电工研究所 | Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor |
| WO2022139435A1 (en) * | 2020-12-22 | 2022-06-30 | 한국과학기술원 | Load driving device |
| CN115800734A (en) * | 2023-02-08 | 2023-03-14 | 浙江日风电气股份有限公司 | Single-stage second-order boost inverter, boost method, device, equipment and medium |
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