CN206789546U - A kind of cmos image sensor - Google Patents
A kind of cmos image sensor Download PDFInfo
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- CN206789546U CN206789546U CN201720508127.3U CN201720508127U CN206789546U CN 206789546 U CN206789546 U CN 206789546U CN 201720508127 U CN201720508127 U CN 201720508127U CN 206789546 U CN206789546 U CN 206789546U
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- image sensor
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Abstract
The utility model discloses a kind of cmos image sensor, including image sensor chip and substrate, the upper surface of image sensor chip has photosensitive area, image sensor chip is fixedly installed on the middle part of substrate, substrate surface is surrounded by annular protrusion, and substrate is connected with optical glass by described annular protrusion;The edge area distribution of image sensor chip lower surface has several blind holes, image sensor chip lower surface and the side surface of blind hole are provided with passivation layer, the side surface away from image sensor chip is connected with metallic conductive pattern layer on institute's passivation layer, a side surface of the metallic conductive pattern layer away from passivation layer is connected with a welding resisting layer, several through holes are provided with welding resisting layer, metallic conductive pattern layer is respectively connected with a soldered ball by each through hole.Imaging sensor of the present utility model has that processing technology is simple, and the structure that optical glass is connected with substrate is simple, and optical glass can prevent dust from entering chip.
Description
Technical field
Technical field of semiconductors is the utility model is related to, it particularly relates to a kind of cmos image sensor.
Background technology
Imaging sensor has been widely used in the digital device of digital camera, camera phone etc..Image
Sensor assembly may include the imaging sensor for image information to be converted to power information.Specifically, imaging sensor can
Including electronics can be converted photons to show the semiconductor devices with storage image.The example of imaging sensor includes electric charge
Coupled apparatus(CCD), complementary metal oxide silicon(CMOS)Imaging sensor(CIS)Deng.
The problems such as existing imaging sensor has the shortcomings that many, and complicated with processing technology, and cost is high, therefore
Need improvement badly.
Utility model content
For the above-mentioned technical problem in correlation technique, the utility model proposes a kind of cmos image sensor, Neng Gouke
Take the above-mentioned deficiency of prior art.
To realize above-mentioned technical purpose, what the technical solution of the utility model was realized in:
A kind of cmos image sensor, including image sensor chip and substrate, the upper surface of described image sensor chip
With photosensitive area, described image sensor chip is fixedly installed on the middle part of described substrate, the surrounding of described substrate surface
Provided with annular protrusion, described substrate is connected with optical glass by described annular protrusion;Under described image sensor chip
The edge area distribution on surface has several blind holes, and the side surface of described image sensing chip lower surface and blind hole is provided with blunt
Change layer, the side surface away from image sensor chip is connected with metallic conductive pattern layer, described metal on described passivation layer
A side surface of the conductive pattern layer away from passivation layer is connected with a welding resisting layer, and several through holes, institute are provided with described welding resisting layer
The metallic conductive pattern layer stated is respectively connected with a soldered ball by each through hole.
Further, described optical glass lower surface is provided with the annular groove coordinated with described annular protrusion.
Further, described welding resisting layer is ink.
The beneficial effects of the utility model:Imaging sensor of the present utility model has that processing technology is simple, optical glass
The structure being connected with substrate is simple, and optical glass can prevent dust from entering chip.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
In the required accompanying drawing used be briefly described, it should be apparent that, drawings in the following description are only of the present utility model
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other accompanying drawings.
Fig. 1 is the structural representation of the cmos image sensor according to the utility model embodiment;
In figure:1st, substrate;2nd, annular protrusion;3rd, optical glass;4th, image sensor chip;5th, photosensitive area;6th, passivation layer;
7th, metallic conductive pattern layer;8th, welding resisting layer;9th, through hole;10th, soldered ball.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, every other embodiment that those of ordinary skill in the art are obtained all belongs to
In the scope of the utility model protection.
As shown in figure 1, a kind of cmos image sensor according to the utility model embodiment, including image sensing core
Piece 4 and substrate 1, the upper surface of described image sensor chip 4 have photosensitive area 5, and described image sensor chip 4 is fixedly installed
In the middle part of described substrate 1, the described surface of substrate 1 is surrounded by annular protrusion 2, and described substrate 1 is by described
Annular protrusion 2 is connected with optical glass 3;The edge area distribution of the described lower surface of image sensor chip 4 has several
The side surface of blind hole, the lower surface of described image sensing chip 4 and blind hole is provided with passivation layer 6, away from image on described passivation layer 6
One side surface of sensing chip 4 is connected with metallic conductive pattern layer 7, described metallic conductive pattern layer 7 away from passivation layer 6 one
Side surface is connected with a welding resisting layer 8, and several through holes 9 are provided with described welding resisting layer 8, and described metallic conductive pattern layer 7 is logical
Cross each through hole 9 and be respectively connected with a soldered ball 10.
In one embodiment, the described lower surface of optical glass 3 is provided with the annular coordinated with described annular protrusion 2
Groove.
In one embodiment, described welding resisting layer 8 is ink.
In order to facilitate above-mentioned technical proposal of the present utility model is understood, below by way of new to this practicality in specifically used mode
The above-mentioned technical proposal of type is described in detail.
Imaging sensor of the present utility model has that processing technology is simple, and the structure that optical glass is connected with substrate is simple,
And optical glass can prevent dust from entering chip.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc., the utility model should be included in
Protection domain within.
Claims (3)
1. a kind of cmos image sensor, it is characterised in that including image sensor chip(4)And substrate(1), described image passes
Sense chip(4)Upper surface there is photosensitive area(5), described image sensor chip(4)It is fixedly installed on described substrate(1)'s
Middle part, described substrate(1)Surface is surrounded by annular protrusion(2), described substrate(1)Pass through described annular protrusion
(2)It is connected with optical glass(3);Described image sensor chip(4)The edge area distribution of lower surface has several blind
Hole, described image sensing chip(4)Lower surface and the side surface of blind hole are provided with passivation layer(6), described passivation layer(6)It is upper remote
Image sensor chip(4)A side surface be connected with metallic conductive pattern layer(7), described metallic conductive pattern layer(7)It is remote
Passivation layer(6)A side surface be connected with a welding resisting layer(8), described welding resisting layer(8)On be provided with several through holes(9), it is described
Metallic conductive pattern layer(7)Pass through each through hole(9)It is respectively connected with a soldered ball(10).
A kind of 2. cmos image sensor according to claim 1, it is characterised in that described optical glass(3)Following table
Face is provided with and described annular protrusion(2)The annular groove of cooperation.
A kind of 3. cmos image sensor according to claim 1, it is characterised in that described welding resisting layer(8)For ink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720508127.3U CN206789546U (en) | 2017-05-09 | 2017-05-09 | A kind of cmos image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720508127.3U CN206789546U (en) | 2017-05-09 | 2017-05-09 | A kind of cmos image sensor |
Publications (1)
Publication Number | Publication Date |
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CN206789546U true CN206789546U (en) | 2017-12-22 |
Family
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Family Applications (1)
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CN201720508127.3U Active CN206789546U (en) | 2017-05-09 | 2017-05-09 | A kind of cmos image sensor |
Country Status (1)
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CN (1) | CN206789546U (en) |
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2017
- 2017-05-09 CN CN201720508127.3U patent/CN206789546U/en active Active
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