CN206759461U - Single-side belt electro-optic modulation arrangement - Google Patents

Abstract

A single-sideband electro-optical modulation device, comprising: a first coupler, a second coupler, a beam splitter, a beam combiner, a phase shifter, a first microring modulator and a second microring modulator, wherein: the laser output The optical carrier is coupled to the silicon waveguide through the first coupler, the output end of the first coupler is connected to the input end of the optical splitter, and the output end of the optical splitter is respectively connected to the input end of the first microring modulator and the input end of the second microring modulator The output terminal of the first microring modulator is connected with the input terminal of the beam combiner, the output terminal of the second microring modulator is connected with the input terminal of the beam combiner after passing through the phase shifter, and the output terminal of the beam combiner is connected with the second The coupler is connected, the electrode of the first microring modulator receives the voltage driving signal and bias voltage through the first T-type biaser, and the electrode of the second microring modulator receives the Hilber signal through the second T-type biaser Transformed voltage drive signal and bias voltage. The utility model has low power consumption, small size, and is convenient for integration and miniaturization.

Description

Single-sideband electro-optic modulation device

technical field

The utility model relates to a technology in the field of communication, in particular to a single-side charged light modulation device.

Background technique

Single sideband modulation is an advanced modulation technique that can utilize power and bandwidth more effectively. The bandwidth of the modulated signal output by ordinary AM technology and double sideband modulation technology is twice that of the source signal. The single sideband modulation technology only sends one sideband, but contains all information, so that the effectiveness of the frequency band is improved. The implementation methods of single sideband modulation mainly include filtering method and phase shifting method. The filtering method is to obtain a single sideband signal by filtering out a sideband, thus losing the energy of a sideband. In other words, to achieve the same radio frequency power at the receiving end, it is necessary to increase the energy of the modulated microwave signal. The phase shifting method is to suppress the generation of one sideband and convert its energy to another sideband, thus effectively utilizing the energy of the microwave signal.

The traditional phase-shift SSB modulation technology is mainly realized by using Mach-Zehnder modulator, relatively speaking, it occupies a large area and consumes a lot of power. For optical communication and interconnection systems that require multiple SSB modulation subsystems, the use of Mach-Zehnder modulators requires a larger design area and greater power consumption. Compared with Mach-Zehnder modulators, silicon-based microring modulators have obvious advantages in size and power consumption.

Utility model content

The utility model aims at the above-mentioned deficiencies in the prior art, and proposes a single-side electrified light modulation device, which has the characteristics of low power consumption, small size, easy integration and miniaturization.

The utility model is achieved through the following technical solutions:

The utility model comprises: a first coupler, a second coupler, a beam splitter, a beam combiner, a phase shifter, a first microring modulator and a second microring modulator, wherein: the laser output optical carrier through the first coupling The coupler is coupled to the silicon waveguide, the output end of the first coupler is connected to the input end of the optical splitter, the output end of the optical splitter is respectively connected to the input end of the first microring modulator and the input end of the second microring modulator, and the first microring modulator The output end of the ring modulator is connected to the input end of the beam combiner, the output end of the second micro-ring modulator is connected to the input end of the beam combiner after passing through the phase shifter, and the output end of the beam combiner is connected to the second coupler and the light Coupled from the silicon waveguide to the optical fiber, the first micro-ring modulator is connected to the first T-type bias device and receives the voltage driving signal and bias voltage, and the second micro-ring modulator is connected to the second T-type bias device and receives The voltage driving signal and bias voltage after Hilbert transformation.

The first coupler, the second coupler, the beam splitter, the beam combiner, the first microring modulator, the second microring modulator and the phase shifter are integrated in the same silicon chip.

The parameters of the first microring modulator and the second microring modulator can be specifically designed according to requirements and conditions of the processing platform.

The first coupler and the second coupler may be end face couplers or grating couplers.

The optical splitter is a single-input double-output structure, which can be a multimode interference coupler or a Y branch.

The beam combiner is a double-input single-output structure, which can be a multimode interference coupler or a Y branch.

The phase shifter is a 90 degree phase shifter.

Said laser is a narrowband laser.

Description of drawings

Fig. 1 is a structural representation of the utility model;

Fig. 2 is the modulation curve of the used microring modulator of embodiment emulation;

Fig. 3 is the schematic diagram of the SSB spectrum simulation result of microwave signal;

FIG. 4 is a schematic diagram of a simulation result of a single sideband spectrum of a data signal.

detailed description

As shown in Figure 1, this embodiment includes: a first coupler, a second coupler, a beam splitter, a beam combiner, a phase shifter, a first microring modulator and a second microring modulator, wherein: the laser output The optical carrier is coupled to the silicon waveguide through the first coupler, the output end of the first coupler is connected to the input end of the optical splitter, and the output end of the optical splitter is respectively connected to the input end of the first microring modulator and the input end of the second microring modulator The output terminal of the first microring modulator is connected with the input terminal of the beam combiner, the output terminal of the second microring modulator is connected with the input terminal of the beam combiner after passing through the phase shifter, and the output terminal of the beam combiner is connected with the second The coupler is connected to couple the light from the silicon waveguide to the optical fiber, the first microring modulator is connected to the first T-type biaser and receives the voltage driving signal and bias voltage, the second microring modulator is connected to the second T-type biaser The bias device is connected to receive the Hilbert-transformed voltage driving signal and the bias voltage.

The first coupler, the second coupler, the beam splitter, the beam combiner, the first microring modulator, the second microring modulator and the phase shifter are integrated in the same silicon chip.

The first coupler and the second coupler may be end face couplers or grating couplers.

The optical splitter is a single-input double-output structure, which can be a multimode interference coupler or a Y branch. .

The beam combiner is a double-input single-output structure, which can be a multimode interference coupler or a Y branch.

The phase shifter is a 90 degree phase shifter. The lasers are narrowband lasers.

The first microring modulator and the second microring modulator resonate at 1550nm when not powered on, the Q value is 5000, the coupling coefficient between the straight waveguide and the microring is 0.145, and the effective refractive index of the waveguide is 2.6 , the loss of the microring waveguide is 10000dB/m, the coefficient of refractive index change is approximately 0.001/V, and the loss of the microring waveguide introduced by power is approximately 1000dB/(m*V). The modulation curve is shown in Figure 2, which shows that the above simulation parameter settings are reasonable, and there is an approximately linear relationship between the output optical power of the modulator and the modulation voltage, which is consistent with the actual situation.

As shown in FIG. 3 , the bias voltage of the microwave signal is 0.3V, the peak-to-peak value is 0.4V, the frequency is 10GHz, the output wavelength of the laser 10 is 1550nm, and the line width is 10MHz. After the light is turned on and the power is turned on, the spectrum of the single sideband signal obtained, the lower sideband and the first order sideband are effectively suppressed.

As shown in Figure 4, the bias voltage of the NRZ signal is 0.15V, the amplitude is 0.13V, the frequency is 10GHz, the laser output wavelength is 1550nm, and the line width is 10MHz. After the light is turned on and the power is turned on, the spectrum of the single sideband signal obtained, the lower sideband is suppressed, and the sideband suppression ratio is about 10dB.

The above specific implementation can be partially adjusted in different ways by those skilled in the art without departing from the principle and purpose of the utility model. The scope of protection of the utility model is subject to the claims and is not limited by the above specific implementation. Each implementation scheme within its scope is bound by the utility model.

Claims (7)

1. A single-sideband electro-optic modulation device is characterized in that, comprising: a first coupler, a second coupler, an optical splitter, a beam combiner, a phase shifter, a first microring modulator and a second microring modulation device, wherein: the laser output optical carrier is coupled to the silicon waveguide through the first coupler, the output end of the first coupler is connected to the input end of the optical splitter, and the output end of the optical splitter is respectively connected to the input end of the first microring modulator and the second The input terminals of the two microring modulators are connected, the output terminal of the first microring modulator is connected with the input terminal of the beam combiner, the output terminal of the second microring modulator is connected with the input terminal of the beam combiner after passing through the phase shifter, and the beam combiner The output end of is connected with the second coupler, the first micro-ring modulator is connected with the first T-type bias device, and the second micro-ring modulator is connected with the second T-type bias device. 2. The SSB electro-optic modulation device according to claim 1, characterized in that, the first coupler, the second coupler, the beam splitter, the beam combiner, the first micro-ring modulator, the second micro-ring modulator, The ring modulator and phase shifter are integrated on the same silicon chip. 3. The single sideband electro-optic modulation device according to claim 1, wherein the first coupler and the second coupler are end face couplers or grating couplers. 4. The single-sideband electro-optic modulation device according to claim 1, wherein the optical splitter is a single-input double-output multimode interference coupler or a Y-branch structure. 5 . The single sideband electro-optic modulation device according to claim 1 , wherein the beam combiner is a dual-input single-output multimode interference coupler or a Y branch structure. 6. The single-sideband electro-optical modulation device according to claim 1, wherein the phase shifter is a 90-degree phase shifter. 7. The single sideband electro-optic modulation device according to claim 1, wherein the laser is a narrowband laser.