CN108696318B - Single sideband electro-optic modulation device for carrier suppression - Google Patents
Single sideband electro-optic modulation device for carrier suppression Download PDFInfo
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- CN108696318B CN108696318B CN201710220383.7A CN201710220383A CN108696318B CN 108696318 B CN108696318 B CN 108696318B CN 201710220383 A CN201710220383 A CN 201710220383A CN 108696318 B CN108696318 B CN 108696318B
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- ring modulator
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- 230000001629 suppression Effects 0.000 title description 5
- 230000003287 optical effect Effects 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000009466 transformation Effects 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/5165—Carrier suppressed; Single sideband; Double sideband or vestigial
Abstract
A carrier suppressed single sideband electro-optic modulation device comprising: the invention has low power consumption, small size and convenient integration.
Description
Technical Field
The invention relates to a technology in the field of communication, in particular to a single-sideband electro-optical modulation device for carrier suppression.
Background
Single sideband modulation is an advanced modulation technique that can more efficiently utilize power and bandwidth. The bandwidth of the modulated signal output by the common amplitude modulation technology and the double-sideband modulation technology is twice that of the source signal. The single sideband modulation technology of carrier suppression only transmits one sideband and does not transmit a carrier, so that the power of a transmitting end is greatly saved, the consumption of power supply energy is reduced, and meanwhile, all information is contained, so that the effectiveness of a frequency band is improved. The single sideband modulation method mainly comprises a filtering method and a phase shifting method. The filtering method is to obtain a single sideband signal by filtering one sideband, so that the energy of one sideband is lost, in other words, the energy of a modulated microwave signal is increased to achieve the same radio frequency power at the receiving end. The phase shifting method is to convert the energy of one sideband to the other sideband by inhibiting the generation of the other sideband, so that the energy of the microwave signal is effectively utilized.
The traditional phase-shifting single-sideband modulation technology is mainly realized by using a Mach-Zehnder modulator, and is relatively large in occupied area and power consumption. For optical communication and interconnection systems that require multiple single sideband modulation subsystems, the design area required to utilize a mach-zehnder modulator is greater and the power consumption is greater. Silicon-based micro-ring modulators offer significant advantages in size and power consumption over mach-zehnder modulators.
Disclosure of Invention
The invention provides a single sideband electro-optical modulation device with carrier suppression, which has the characteristics of low power consumption, small size, convenient integration and miniaturization.
The invention is realized by the following technical scheme:
the invention comprises the following steps: the optical fiber comprises a first coupler, a second coupler, a first optical splitter, a second optical splitter, a third optical splitter, a first micro-ring modulator, a second micro-ring modulator, a third micro-ring modulator, a fourth micro-ring modulator, a first phase shifter, a second phase shifter, a third phase shifter, a first beam combiner, a second beam combiner and a third beam combiner, wherein: the output optical carrier of the laser is coupled to the silicon waveguide through a first coupler, the output end of the first coupler is connected with the input end of a first optical splitter, the output end of the first optical splitter is connected with the input end of a second optical splitter and the input end of a third optical splitter respectively, the output end of the second optical splitter is connected with the input end of the first phase shifter and the input end of the first micro-ring modulator respectively, the output end of the first phase shifter is connected with the input end of the second micro-ring modulator, the output end of the first micro-ring modulator and the output end of the second micro-ring modulator are connected with the input end of a second combiner, the output end of the third optical splitter is connected with the input end of the second phase shifter and the input end of the third micro-ring modulator respectively, the output end of the third micro-ring modulator and the output end of the fourth micro-ring modulator are connected with the input end of the third combiner, the output end of the third combiner is connected with the input end of the third phase shifter, the output end of the second combiner and the output end of the third combiner are connected with the first optical coupler and the second combiner are connected with the input end of the silicon waveguide.
The first micro-ring modulator receives a voltage driving signal and bias voltage output by a signal source through a first T-shaped bias device; the second micro-ring modulator receives the inverted voltage driving signal and the offset voltage output by the signal source through a second T-shaped biaser; the third micro-ring modulator receives the voltage driving signal and the bias voltage which are output by the signal source and subjected to Hilbert transformation through a third T-type bias; the fourth micro-ring modulator receives the voltage driving signal and the bias voltage which are output by the signal source and are subjected to Hilbert transformation and inversion through a fourth T-type bias device.
The first coupler, the second coupler, the first light splitter, the second light splitter, the third light splitter, the first micro-ring modulator, the second micro-ring modulator, the third micro-ring modulator, the fourth micro-ring modulator, the first phase shifter, the second phase shifter, the third phase shifter, the first beam combiner, the second beam combiner and the third beam combiner are integrated on the same silicon-based chip.
The first phase shifter and the second phase shifter are both 180-degree phase shifters, and the third phase shifter is a 90-degree phase shifter.
The first coupler and the second coupler are preferably end-face couplers or grating couplers.
The first beam splitter, the second beam splitter and the third beam splitter are of a single-input double-output structure, and preferably a multimode interference coupler or a Y-branch is adopted.
The first beam combiner, the second beam combiner and the third beam combiner are of a double-input single-output structure, and preferably a multimode interference coupler or a Y-branch is adopted.
The laser is a narrow-band laser.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a graph of modulation curves of a micro-ring modulator used in the simulation of the embodiment;
FIG. 3 is a schematic diagram of single sideband spectral simulation results of a microwave signal;
FIG. 4 is a schematic diagram of a single sideband spectral simulation result of a data signal;
in the figure: a first coupler, a second coupler, a first optical splitter 3, a second optical splitter 4, a third optical splitter 5, a second beam combiner 6, a third beam combiner 7, a first beam combiner 8, a first micro-ring modulator 9, a second micro-ring modulator 10, a third micro-ring modulator 11, a fourth micro-ring modulator 12, a first phase shifter 13, a second phase shifter 14 and a third phase shifter 15.
Detailed Description
As shown in fig. 1, the present embodiment includes: a first coupler 1, a second coupler 2, a first beam splitter 3, a second beam splitter 4, a third beam splitter 5, a first micro-ring modulator 9, a second micro-ring modulator 10, a third micro-ring modulator 11, a fourth micro-ring modulator 12, a first phase shifter 13, a second phase shifter 14, a third phase shifter 15, a first beam combiner 8, a second beam combiner 6, and a third beam combiner 7, wherein: the laser output optical carrier is coupled to the silicon waveguide through a first coupler 1, the output end of the first coupler 1 is connected with the input end of a first beam splitter 3, the output end of the first beam splitter 3 is respectively connected with the input end of a second beam splitter 4 and the input end of a third beam splitter 5, the output end of the second beam splitter 4 is respectively connected with the input end of a first phase shifter 13 and the input end of a first micro-ring modulator 9, the output end of the first phase shifter 13 is connected with the input end of a second micro-ring modulator 10, the output end of the first micro-ring modulator 9 and the output end of the second micro-ring modulator 10 are connected with the input end of a second beam combiner 6, the output end of the third beam splitter 5 is respectively connected with the input end of a second phase shifter 14 and the input end of a third micro-ring modulator 11, the output end of the third micro-ring modulator 11 and the output end of the fourth micro-ring modulator 12 are connected with the input end of a third beam combiner 7, the output end of the third beam combiner 7 is connected with the input end of the third beam combiner 8, and the output end of the third beam combiner 15 is connected with the output end of the third beam combiner 8 in the second beam combiner 6.
The first micro-ring modulator 9 receives a voltage driving signal and bias voltage output by a signal source through a first T-shaped bias; the second micro-ring modulator 10 receives the inverted voltage driving signal and the offset voltage output by the signal source through a second T-shaped biaser; the third micro-ring modulator 11 receives the voltage driving signal and the bias voltage which are output by the signal source and subjected to Hilbert transformation through a third T-type bias; the fourth micro-ring modulator 12 receives the voltage driving signal and the bias voltage output by the signal source and subjected to Hilbert transformation and inversion through a fourth T-type bias.
The first phase shifter 13 and the second phase shifter 14 are both 180-degree phase shifters, and the third phase shifter 15 is a 90-degree phase shifter.
The first coupler 1 and the second coupler 2 may be end-face couplers or grating couplers.
The first beam splitter 3, the second beam splitter 4 and the third beam splitter 5 are of a single-input double-output structure, and can be multimode interference couplers or Y-branches.
The first beam combiner 8, the second beam combiner 6 and the third beam combiner 7 are of a dual-input single-output structure, and can be a multimode interference coupler or a Y-branch.
The first micro-ring modulator 9, the second micro-ring modulator 10, the third micro-ring modulator 11 and the fourth micro-ring modulator 12 resonate at 1550nm when not powered, the Q value is 5000, the coupling coefficient between the straight waveguide and the micro-ring is 0.145, the effective refractive index of the waveguide is 2.6, the loss of the micro-ring waveguide is 10000dB/m, the refractive index change coefficient is approximately 0.001/V, and the micro-ring waveguide loss introduced by power-up is approximately 1000 dB/(m.times.V). The modulation curve is shown in fig. 2, which shows that the simulation parameter setting is reasonable, and the output optical power of the modulator and the modulation voltage have a section of approximately linear relation area which is consistent with reality.
As shown in FIG. 3, the peak-to-peak value of the microwave signal is 0.4V, the frequency is 10GHz, the bias voltage is 0.3V, the output wavelength of the laser is 1550nm, and the line width is 10MHz. After the power is applied, the spectrum of the obtained single-sideband signal is effectively inhibited by the carrier and the first-order sideband of the lower sideband.
As shown in FIG. 4, the amplitude of the NRZ signal is 0.13V, the frequency is 10GHz, the bias voltage is 0.15V, the output wavelength of the laser is 1550nm, and the line width is 10MHz. After the power is applied, the spectrum of the single sideband signal is obtained, the carrier wave and the lower sideband are restrained, and the sideband restraining ratio is about 15dB.
The foregoing embodiments may be partially modified in numerous ways by those skilled in the art without departing from the principles and spirit of the invention, the scope of which is defined in the claims and not by the foregoing embodiments, and all such implementations are within the scope of the invention.
Claims (7)
1. A carrier suppressed single sideband electro-optic modulation device comprising: the optical fiber comprises a first coupler, a second coupler, a first optical splitter, a second optical splitter, a third optical splitter, a first micro-ring modulator, a second micro-ring modulator, a third micro-ring modulator, a fourth micro-ring modulator, a first phase shifter, a second phase shifter, a third phase shifter, a first beam combiner, a second beam combiner and a third beam combiner, wherein: the output optical carrier of the laser is coupled to the silicon waveguide through a first coupler, the output end of the first coupler is connected with the input end of a first optical splitter, the output end of the first optical splitter is respectively connected with the input end of a second optical splitter and the input end of a third optical splitter, the output end of the second optical splitter is respectively connected with the input end of the first phase shifter and the input end of the first micro-ring modulator, the output end of the first phase shifter is connected with the input end of the second micro-ring modulator, the output end of the first micro-ring modulator and the output end of the second micro-ring modulator are both connected with the input end of a second combiner, the output end of the third optical splitter is respectively connected with the input end of the second phase shifter and the input end of the third micro-ring modulator, the output end of the third micro-ring modulator and the output end of the fourth micro-ring modulator are both connected with the input end of the third combiner, the output end of the third combiner is connected with the input end of the third phase shifter, the output end of the second combiner and the output end of the third combiner are both connected with the output end of the second combiner and the third optical splitter are coupled to the silicon waveguide;
the first micro-ring modulator receives a voltage driving signal and bias voltage output by a signal source through a first T-shaped bias device; the second micro-ring modulator receives the inverted voltage driving signal and the offset voltage output by the signal source through a second T-shaped biaser; the third micro-ring modulator receives the voltage driving signal and the bias voltage which are output by the signal source and subjected to Hilbert transformation through a third T-type bias; the fourth micro-ring modulator receives the voltage driving signal and the bias voltage which are output by the signal source and are subjected to Hilbert transformation and inversion through a fourth T-type bias device.
2. The carrier suppressed single sideband electro-optic modulation device of claim 1, wherein the first coupler, the second coupler, the first optical splitter, the second optical splitter, the third optical splitter, the first micro-ring modulator, the second micro-ring modulator, the third micro-ring modulator, the fourth micro-ring modulator, the first phase shifter, the second phase shifter, the third phase shifter, the first beam combiner, the second beam combiner, and the third beam combiner are integrated on a same silicon-based chip.
3. The carrier-suppressed single-sideband electro-optic modulation device of claim 1, wherein said first coupler and said second coupler are end-face couplers or grating couplers.
4. The carrier suppressed single sideband electro-optic modulation device of claim 1 wherein said first phase shifter and said second phase shifter are both 180 degree phase shifters and said third phase shifter is a 90 degree phase shifter.
5. The carrier suppressed single sideband electro-optic modulation device of claim 1, wherein said first optical splitter, second optical splitter and third optical splitter are single-input dual-output multimode interference couplers or Y-branch structures.
6. The carrier suppressed single sideband electro-optic modulation device of claim 1, wherein said first combiner, second combiner and third combiner are dual-input single-output multimode interference couplers or Y-branch structures.
7. The carrier-suppressed single-sideband electro-optic modulation device of claim 1 wherein said laser is a narrowband laser.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710220383.7A CN108696318B (en) | 2017-04-06 | 2017-04-06 | Single sideband electro-optic modulation device for carrier suppression |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710220383.7A CN108696318B (en) | 2017-04-06 | 2017-04-06 | Single sideband electro-optic modulation device for carrier suppression |
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| CN108696318A CN108696318A (en) | 2018-10-23 |
| CN108696318B true CN108696318B (en) | 2023-11-03 |
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| CN111238464B (en) * | 2020-01-19 | 2021-11-09 | 浙江大学 | Detection method of resonant optical gyroscope based on reciprocity modulation and time division switching |
| CN111610596B (en) * | 2020-07-13 | 2022-02-22 | 中国电子科技集团公司第四十四研究所 | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799608A (en) * | 2010-04-02 | 2010-08-11 | 上海交通大学 | Electric-control broadband photon radio-frequency phase shifter based on silicon-based micro-ring resonant cavity |
| CN103326789A (en) * | 2013-05-03 | 2013-09-25 | 华中科技大学 | System and method for frequency tunable microwave phase shifting |
| US8879916B1 (en) * | 2011-12-04 | 2014-11-04 | Hrl Laboratories, Llc | Methods and apparatus for locking the optical phase of single-sideband amplitude-modulation signals |
| CN106487451A (en) * | 2016-11-11 | 2017-03-08 | 中国科学院半导体研究所 | Microwave photon phase changer and method |
| CN206673978U (en) * | 2017-04-06 | 2017-11-24 | 上海交通大学 | The single-side belt electro-optic modulation arrangement that carrier wave suppresses |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070104492A1 (en) * | 2005-11-03 | 2007-05-10 | Ipitek, Inc. | System for and method of single slideband modulation for analog optical link |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799608A (en) * | 2010-04-02 | 2010-08-11 | 上海交通大学 | Electric-control broadband photon radio-frequency phase shifter based on silicon-based micro-ring resonant cavity |
| US8879916B1 (en) * | 2011-12-04 | 2014-11-04 | Hrl Laboratories, Llc | Methods and apparatus for locking the optical phase of single-sideband amplitude-modulation signals |
| CN103326789A (en) * | 2013-05-03 | 2013-09-25 | 华中科技大学 | System and method for frequency tunable microwave phase shifting |
| CN106487451A (en) * | 2016-11-11 | 2017-03-08 | 中国科学院半导体研究所 | Microwave photon phase changer and method |
| CN206673978U (en) * | 2017-04-06 | 2017-11-24 | 上海交通大学 | The single-side belt electro-optic modulation arrangement that carrier wave suppresses |
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