CN206759422U - A kind of VCO circuits of low-power high-performance - Google Patents
A kind of VCO circuits of low-power high-performance Download PDFInfo
- Publication number
- CN206759422U CN206759422U CN201720405210.8U CN201720405210U CN206759422U CN 206759422 U CN206759422 U CN 206759422U CN 201720405210 U CN201720405210 U CN 201720405210U CN 206759422 U CN206759422 U CN 206759422U
- Authority
- CN
- China
- Prior art keywords
- circuit
- voltage
- low
- fets
- vco
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model discloses a kind of VCO circuits of low-power high-performance, including band-gap reference circuit, low-dropout linear voltage-regulating circuit LDO, current converter circuit and ring oscillator circuit, the band-gap reference circuit, low-dropout linear voltage-regulating circuit, current converter circuit and ring oscillator circuit are sequentially connected from left to right, the band-gap reference circuit is used to provide not with the reference voltage of temperature and mains voltage variations, the low-dropout linear voltage-regulating circuit LDO is used to band-gap reference producing voltage doubles and output voltage is kept constant, the current converter circuit includes three layers of conversion equipment, the ring oscillator circuit is composed in parallel by Pyatyi oscillator；Output frequency is high at lower voltages for the utility model, and small with technique change, frequency-adjustable scope is big, and the output frequency variation with temperature of voltage controlled oscillator is small, and chip cost is low, and circuit structure is simple, low in energy consumption.
Description
Technical field
It the utility model is related to circuit field, and in particular to a kind of VCO circuits of low-power high-performance.
Background technology
Oscillator is a kind of electronic component for being used to produce the repeating signals such as sine wave, square wave, is widely used in communication, electricity
The every field such as son, Aero-Space, medical science；Wherein voltage controlled oscillator (VCO, Voltage-Controlled Oscillator)
Due to the frequency of oscillation with voltage change can be provided, turn into the important component of radio circuit, also referred to as frequency modulation its, use
In producing FM signal, generally used in modern communication technology, Bluetooth technology etc., in technical field of electronic communication, VCO with
Current source, amplifier have status of equal importance.
Initial VCO is assembled using discrete component, proposed as the communications field is continuous to end product it is light,
It is thin, short, small etc. to require, and require low cost, high-performance, can produce in enormous quantities, therefore grinding on voltage controlled oscillator
Study carefully and be concentrated mainly on circuit structure, performance, volume and cost of manufacture etc., and developing direction is to use mainstream standard CMOS
The VCO circuits of technique are designed and developed.
It is big mainly to include LC voltage controlled oscillators, phase noise and RC voltage controlled oscillators etc. three for voltage controlled oscillator at present
Class.Wherein LC voltage controlled oscillators are by voltage-controlled element --- varactor is placed in oscillation circuit and formed；Crystal is voltage-controlled
What oscillator then formed varactor and quartz-crystal body phase concatenation, because the VCO of both types can not compatibility standard
CMOS technology, therefore use RC voltage controlled oscillators in integrated circuit mostly at present, the present invention is directed to RC voltage controlled oscillators.
RC voltage controlled oscillators include common RC charge and discharges electrical oscillator and ring oscillator two major class.
In the prior art, linear voltage controlled oscillator is exactly a kind of typical RC charge and discharge electrical oscillators, such to shake
Device is swung by the way that compared with the reference voltage of comparator, the voltage on electric capacity is obtained into periodic waveform.RC charge and discharges
Electrical oscillator generally realizes high-frequency using high power supply voltage to accelerate the discharge and recharge of load capacitance；Once supply voltage reduces,
Electric-field intensity declines, and semiconductor carriers translational speed is slack-off, and switching speed also declines, so as to cause frequency to reduce.In addition by
Using semiconductor devices such as resistance, electric capacity in the VCO of this structure, influenceed by technique change, frequency change can be bigger；
Additionally, due to resistance, electric capacity these passive devices are added, cause to need to increase lithographic mask layer in ic processing
It is secondary, it can so greatly increase the cost of chip.
Delay unit in ring oscillator can be diversified.The first kind：Fully differential ring oscillator frequently with
Three arrive the structure of Pyatyi.Typical differential ring oscillator employs the difference delay unit of balanced load and anti-in the prior art
Feedback-replica bias circuit；Also a kind of differential ring oscillator, wherein delay unit employ the passive devices such as resistance, pass through
The resistance value for adjusting cross-coupled transistor pairs is adjusted to enter line frequency to voltage controlled oscillator.Due to being difficult under the conditions of CMOS technology
The accurate resistance of resistance is made, therefore also can replace resistance with PMOS, is its conducting resistance when PMOS is in deep linear zone
Almost constant.
Second class is the basic ring oscillator structure being made up of phase inverter.Phase inverter forms ring oscillator common
Very universal in oscillator, wherein phase inverter is as delay unit, and level Four loop is under certain working condition in this oscillator
Situation that is locked, can not vibrating occurs.To solve problem above, latch is with the addition of in delay unit, lock can be broken
Death situation state, dynamic regulation ability is enhanced, realize the function of voltage control frequency.
The structure of the class ring oscillator of the above two is relatively complicated, so causes VCO chip area larger, in addition more than
The VCO power consumptions of several structures are relatively large, phase inverter form basic ring oscillator structure although power consumption compared with above fully differential
Ring oscillator is small, but circuit structure is also more complicated, and chip area can not accomplish very little.
3rd class：In order to simplify structure, area is reduced, power consumption is reduced, using some special delay units, has in VCO
In employ the structure of cmos transmission gate as delay unit；Schmidt trigger is additionally used in addition, is meeting oscillating condition
In the case of play a part of phasing back and shaping.This kind of voltage controlled oscillator employs transmission gate as thyrite, but by
The breadth length ratio of pipe is depended in metal-oxide-semiconductor conducting resistance, and pipe breadth length ratio is limited by the factors such as processing limit, this structure
Its frequency-adjustable scope of VCO is smaller, can not all meet under many applicable cases.
In addition, in the prior art, VCO output frequencies can change with the change of temperature.Give one example, in room temperature
Under, when output frequency is 20MHz, traditional VCO frequency variation is about 6.57M Hz, and comparatively existing VCO becomes
Change amount is smaller, but has 0.9MHz, 4.5% has also been reached if percentagewising, such temperature characterisitic exists
It is in many VCO applications and unacceptable.
The content of the invention
For problems of the prior art, the utility model provides a kind of VCO circuits of low-power high-performance, its
Output frequency is high at lower voltages, and small with technique change, frequency-adjustable scope is big, and the output frequency of voltage controlled oscillator is with temperature
Change small, chip cost is low, and circuit structure is simple, low in energy consumption.
Technical scheme is used by the utility model：A kind of VCO circuits of low-power high-performance, including band-gap reference electricity
Road, low-dropout linear voltage-regulating circuit LDO, current converter circuit and ring oscillator circuit, the band-gap reference circuit, low pressure
Difference linear voltage-stabilizing circuit, current converter circuit and ring oscillator circuit are sequentially connected from left to right, the band-gap reference electricity
Road is used to provide not to be used for band with the reference voltage of temperature and mains voltage variations, the low-dropout linear voltage-regulating circuit LDO
Gap benchmark produces voltage doubles and output voltage is kept constant, and the current converter circuit includes three layers of conversion equipment, institute
Current converter circuit first layer conversion equipment is stated to be converted into controlling by low-dropout linear voltage-regulating circuit LDO outputs constant voltage
Constant voltage control electric current I1 is transformed into by supply voltage by electric current I1 processed, the current converter circuit second layer conversion equipment
Electric current I2 is converted into controlling two suppressions of VCO frequency by control electric current I2, the current converter circuit third layer conversion equipment
Voltage VBP and VBN processed, the ring oscillator circuit are composed in parallel by Pyatyi oscillator.
Preferably, the band-gap reference circuit includes eight FETs, and eight FETs include four N-type fields
Effect pipe and four p-type FETs.
Preferably, it is described to include nine FETs, nine FETs including low-dropout linear voltage-regulating circuit LDO
Including five N-type FETs and four p-type FETs.
Preferably, the current converter circuit includes ten FETs, and described ten FETs include five N-types
FET and five p-type FETs.
Preferably, the ring oscillator circuit is divided into Pyatyi oscillator and composed in parallel, including 24 field-effects
Pipe, 24 FETs include 12 N-type FETs and 12 p-type FETs.
The beneficial effect that the utility model reaches is：
1st, the stability varied with temperature using VCO output frequencies are improved after band-gap reference module, suitable for frequency with
Temperature change requires very small occasion；Emulation for output for 350MHz this centre frequency progress temperature characterisitics, as a result
Show, temperature is in the range of -40~125 DEG C, output center frequency change about 0.18%, much smaller than other VCO structures.
2nd, it is 2.5V by 1.25V voltages increase caused by band-gap reference after using LDO modules.Under usual low voltage condition
The bias current of ring oscillator is smaller, so as to increase rise, fall time so that upset is slack-off, can so as to influence frequency
Adjust scope.With the raising of operating voltage, bias current is also improved so that the adjustable extent of frequency is very big.
3rd, by using special current converter so that control voltage VT and electric current I1 are linear, and by I1 mirrors
As being a linear relationship between obtained VCO control electric currents I2 and control voltage VT, and not with supply voltage VDD change and
Change, the linearity of VCO output frequencies is improved by producing stably and controllable bias current, and be relatively adapted to low-voltage；From
Output frequency can be seen that when supply voltage changes between 1.2~3V with input control terminal voltage change curve figure, VCO
Reference frequency output can reach 200~500MHz, and VCO frequency controlled area charactert is wider, can meet what different application changed to frequency
It is required that.
4th, in electric current suppressive ring oscillation structure, because phase inverter size is smaller, each OSC sections can so be reduced
The parasitic capacitance of point.After electric capacity reduces, the electric current required for reaching certain frequency will reduce, you can with certain biasing
Output frequency is improved under electric current, also beneficial to the stability of VCO output frequencies, and uses such design greatly to reduce
The power consumption of circuit.Other this structure, which can effectively suppress ambient noise, includes the influence of power supply and substrate noise, has good
Anti-noise ability.
5th, whole VCO circuit structures are simple, can effectively save chip area；Using 0.35 μm of technique；Whole VCO face
Product only has 0.02mm2；VCO chip area is small；In addition in whole VCO only with the active device in standard CMOS process, one
Aspect further reduces the cost of chip, while reduces influence of the technique change to output frequency.
Brief description of the drawings
The utility model is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the overall circuit block diagram of the utility model VCO circuits；
Fig. 2 is the circuit diagram of the utility model band-gap reference structure；
Fig. 3 is the utility model low pressure difference linear voltage regulator LDO circuit diagram；
Fig. 4 is the circuit diagram of the utility model current converter；
Fig. 5 is the circuit diagram of the utility model ring oscillator；
Fig. 6 is that the utility model VCO output frequencies vary with temperature tendency chart；
Fig. 7 is the utility model VCO output frequencies with control signal VT changing trend diagrams；
Fig. 8 is the utility model VCO current simulations figure.
Embodiment
Specific embodiment of the present utility model is described further below in conjunction with the accompanying drawings.
Technical scheme is used by the utility model：
As shown in Figures 1 to 8, the VCO circuits of a kind of low-power high-performance, including band-gap reference circuit, low pressure difference linearity
Mu balanced circuit LDO, current converter circuit and ring oscillator circuit, the band-gap reference circuit, low pressure difference linearity voltage stabilizing electricity
Road, current converter circuit and ring oscillator circuit are sequentially connected from left to right, and the band-gap reference circuit is used to provide not
With the reference voltage of temperature and mains voltage variations, the low-dropout linear voltage-regulating circuit LDO is used to band-gap reference producing electricity
Pressure doubles and output voltage is kept constant, and the current converter circuit includes three layers of conversion equipment, the current converter
Low-dropout linear voltage-regulating circuit LDO outputs constant voltage is converted into control electric current I1, institute by circuit first layer conversion equipment
State the current converter circuit second layer conversion equipment constant voltage control electric current I1 is transformed into by supply voltage control electric current I2,
The current converter circuit third layer conversion equipment by electric current I2 be converted into controlling two of VCO frequency suppress voltage VBP and
VBN, the ring oscillator circuit are composed in parallel by Pyatyi oscillator.
Preferably, the band-gap reference circuit includes eight FETs, and eight FETs include four N-type fields
Effect pipe and four p-type FETs.
In the band-gap reference circuit, the source electrode of P11 pipes connects power supply, grounded-grid；The drain electrode of P11 pipes connects N11 drain electrode
And grid；Source electrode connecting resistance R11 one end of N11 pipes, resistance R11 other ends ground connection；The source electrode of P12 pipes connects power supply, and grid meets P12
Drain electrode and P13 pipes grid and N13 drain electrode；N12 drain electrode connects N13 drain electrode, and grid connects P11 drain electrode with N11's
Grid, source electrode connect N13 source electrode and resistance R12 one end, another termination T11 of resistance emitter stage；N13 drain electrode connects P12's
Drain electrode, grid connect N14 grid, and source electrode connects N12 source electrode；T11 base ground connection, collecting zone ground connection；P13 source electrode connects electricity
Source, grid connect P12 grid and P14 grid, and drain electrode connects N14 drain and gate；N14 drain electrode P13 drain electrode is with N13's
Grid, grid connect N13 grid, and source electrode connects T12 emitter stage；T12 base stages and colelctor electrode are all grounded；P14 source electrode connects power supply,
Grid connects P13 grid and Vbias, and drain electrode connects Vref and R13 one end, another termination T13 of R13 emitter stage；T13 base stage
All it is grounded with colelctor electrode.
The band-gap reference circuit compensate for Vbe and vary with temperature by trying to be cancelled out each other using positive and negative temperature coefficient
Influence to output voltage, within the temperature range of -40 DEG C to 125 DEG C, the output voltage close to zero-temperature coefficient can be obtained.
It is highly suitable for keeping stable output reference voltage in the environment of temperature and spread of voltage.This band-gap reference power consumption
It is low, easily start, it is low to the degree of dependence of technique.The band-gap reference module produces one and become little with temperature and supply voltage
The 1.25V reference voltages of change.Emulation for output for 350MHz this centre frequency progress temperature characterisitics, as a result such as accompanying drawing 6
It is shown, the results showed that, temperature is in the range of -40~125 DEG C, output center frequency change about 0.18%, much smaller than other VCO
Structure.
Preferably, it is described to include nine FETs, nine FETs including low-dropout linear voltage-regulating circuit LDO
Including five N-type FETs and four p-type FETs.
In the low-dropout linear voltage-regulating circuit LDO, P21 source electrode connects power supply, and grid meets Vbias, and drain electrode connects N21 leakage
Pole and grid；N21, which drains, connects P21 drain electrode, and grid connects P21 drain electrode and N24 grid, source ground；P22 source electrode connects electricity
Source, grid connect the drain electrode of P23 grid and P22.Drain electrode connects N22 drain electrode；N22 drain electrode connects P22 drain electrode, grounded-grid,
Source electrode connects the drain electrode of N23 source electrode and N24；N24 drain electrode connects N22 and N23 source electrode, and grid connects N21 grid, and source electrode connects
Ground；P23 source electrode connects power supply, and grid connects P22 grid, and drain electrode connects N23 drain electrode and P24 grid；N23 drain electrode meets P23
Drain electrode, grid meets Vref, and source electrode connects N24 drain electrode；The C21 drain electrode of a termination P23 and P24 grid, another termination
Vldo；A C22 termination Vldo, other end ground connection；P24 source electrode connects power supply, and grid connects P23 drain electrode, and drain electrode meets Vldo；
A R21 termination Vldo, other end ground connection and R22 one end, the R22 other end are also grounded；N25 grid meets Vldo, source electrode and
Drain electrode connection is grounded simultaneously.
It is 2.5V by 1.25V voltages increase caused by band-gap reference after LDO modules.Ring under usual low voltage condition
The bias current of shape oscillator is smaller, so as to increase rising, fall time so that upset is slack-off, so as to influence the adjustable of frequency
Scope.With the raising of operating voltage, bias current is also improved so that the adjustable extent of frequency is very big, this structure
LDO have the advantages that cost is low, noise is small.
Preferably, the current converter circuit includes ten FETs, and described ten FETs include five N-types
FET and five p-type FETs.
In the current converter circuit, P30 pipe source electrodes meet V1do, and P30 tube grids connect P31 tube grids and the drain electrode of P30 pipes,
The drain electrode of N30 pipes connects the drain electrode of P30 pipes, and N30 tube grids connect VT, N30 pipe source electrode connecting resistances I_R one end, resistance other end ground connection；
P31 pipe source electrodes meet V1do, and P31 tube grids connect P30 tube grids, and the drain electrode of N31 pipes connects the drain electrode of P31 pipes, and N31 tube grids connect N32 pipe grid
Pole and the drain electrode of N31 pipes, N31 pipe source grounds；P32 pipe source electrodes connect power supply, and P32 tube grids connect P33 tube grids and the leakage of P32 pipes
Pole, the drain electrode of N32 pipes connect the drain electrode of N31 pipes, N32 pipe source grounds；P33 pipe source electrodes connect power supply, and P33 tube grids connect P32 tube grids,
The drain electrode of N33 pipes connects the drain electrode of P33 pipes, and N33 tube grids connect the drain electrode of N33 pipes and N34 tube grids, N33 pipe source grounds；P34 pipe source electrodes
Power supply and electric capacity C32 one end are connect, P34 tube grids connect the drain electrode of electric capacity the C32 other end VBP and P34 pipe, and the drain electrode of N34 pipes connects the leakage of P34 pipes
Pole, N34 tube grids connect electric capacity C33 one end VBN, electric capacity C33 other ends ground connection, N34 pipe source grounds.
Current conversion module in the utility model refers to VCO is controlled into electricity first with above LDO output constant voltages
Pressure VT is converted into control electric current I1；Then mirror current source principle is used, LDO outputs constant voltage control electric current I1 is transformed into
By supply voltage control electric current I2；Finally produce control VCO frequency by electric current I2 two suppress voltage VBP and VBN.
As shown in figure 4, the electric current I_R flowed through on resistance R can be calculated with below equation：
In above formula, Vthn is the cut-in voltage of N30 pipes, and because the size W/L designs of N30 pipes are larger, and I_R is designed
It is again less than normal, therefore it is very small to fall the overdrive voltage on N30 pipes, can ignore when calculating.Design, control in this way
Directrix sexual intercourse is established between electric current I_R on voltage VT and resistance R.And from accompanying drawing 4 as can be seen that being exported by LDO constant
Voltage-controlled electric current I1 is again proportional with I_R；Therefore control voltage VT and electric current I1 is linear.
In addition from accompanying drawing 4 as can be seen that I2 is by mirror current source and I1 proportion relations, therefore generation
The electric current I2 (also referred to as VCO control electric currents) that VCO suppresses voltage is a linear relationship between control voltage VT, and not with electricity
Source voltage VDD change and change, therefore in CMOS technology processing procedure of the present invention, designed VCO operating voltage
Can be from 1.2V to 3.3V, and corresponding output frequency has the extraordinary linearity.
VBP the and VBN voltages exported as produced by I2 can be produced vibration by the interference of clock signal, so as to influence VCO
Frequency.This vibration can effectively be reduced by adding C32, C33 electric capacity, avoid the change of VCO output frequencies.
By using special current converter so that control voltage VT and electric current I1 are linear；And by I1 mirror images
It is a linear relationship between obtained VCO control electric currents I2 and control voltage VT, and does not become with supply voltage VDD change
Change；By producing stably and controllable bias current, the linearity (as shown in Figure 8) of VCO output frequencies is improved, and be relatively adapted to
Low-voltage；Accompanying drawing 7 be output frequency with input control terminal voltage change curve, it can be seen that when supply voltage 1.2
When changing between~3V, VCO reference frequency outputs can reach 200~500MHz, and VCO frequency controlled area charactert is wider, can meet not
With requirement of the application to frequency change.
Preferably, the ring oscillator circuit is divided into Pyatyi oscillator and composed in parallel, including 24 field-effects
Pipe, 24 FETs include 12 N-type FETs and 12 p-type FETs.
In the ring oscillator circuit, P402 pipe source electrodes connect power supply, and P402 tube grids meet VBP, and the drain electrode of P402 pipes connects
P401 pipes drain, and P401 tube grids connect N401 tube grids and N411 tube grids, and P401 pipe source electrodes connect N401 pipes source electrode and electric capacity CL
One end, electric capacity CL other ends ground connection, the drain electrode of N401 pipes connect the drain electrode of N402 pipes, and N402 tube grids connect VBN, N402 pipe source grounds；
P404 pipe source electrodes connect power supply, and P404 tube grids meet VBP, and the drain electrode of P404 pipes connects the drain electrode of P403 pipes, and P403 tube grids connect N403 pipe grid
Pole and P401 pipe source electrodes, P403 pipe source electrodes connect N403 pipe source electrodes, and the drain electrode of N403 pipes connects the drain electrode of N404 pipes, and N404 tube grids meet VBN,
N404 pipe source grounds；P406 pipe source electrodes connect power supply, and P406 tube grids meet VBP, and the drain electrode of P406 pipes connects the drain electrode of P405 pipes, P405 pipes
Grid connects N405 tube grids and P403 pipe source electrodes, and P405 pipe source electrodes connect N405 pipe source electrodes, and the drain electrode of N405 pipes connects the drain electrode of N406 pipes,
N406 tube grids connect VBN, N406 pipe source grounds；P408 pipe source electrodes connect power supply, and P408 tube grids meet VBP, and the drain electrode of P408 pipes connects
P407 pipes drain, and P407 tube grids connect N407 tube grids and P405 pipe source electrodes, and P407 pipe source electrodes connect N407 pipe source electrodes, the leakage of N407 pipes
Pole connects the drain electrode of N408 pipes, and N408 tube grids connect VBN, N408 pipe source grounds；P410 pipe source electrodes connect power supply, and P410 tube grids connect
The drain electrode of VBP, P410 pipe connects the drain electrode of P409 pipes, and P409 tube grids connect N409 tube grids and P407 pipe source electrodes, and P409 pipe source electrodes connect
N409 pipe source electrodes, the drain electrode of N409 pipes connect the drain electrode of N410 pipes, and N410 tube grids connect VBN, N410 pipe source grounds；P411 pipe source electrodes connect
Power supply, P411 tube grids connect N411 tube grids and P409 pipe source electrodes, and the drain electrode of P411 pipes connects the drain electrode of N411 pipes, and N411 pipe source electrodes connect
Ground；P412 pipe source electrodes connect power supply, and P412 tube grids connect N412 tube grids and the drain electrode of P411 pipes, and the drain electrode of P412 pipes connects the drain electrode of N412 pipes
And VCO, N412 pipe source ground.
Ring oscillator is most important submodule in VCO, and the utility model, which employs a kind of controlled inverter and is used as, to be prolonged
Shi Danyuan ring oscillator structure, the two suppress power supplies and nothing by VBP and VBN for the electric current of this controlled inverter
Method reaches its due maximum, therefore referred to as electric current suppressive ring oscillator.
The utility model designs electric current suppressive annular OSC circuits using Pyatyi, and this is mainly based upon overall VCO face
The consideration of product and power consumption, because, series is fewer between ring oscillator frequency and series inversely, frequency of oscillation is higher；
Series is more, and the shake of output frequency can be amplified step by step.Such design can both improve defeated under certain bias current
Go out frequency, also beneficial to the stability of VCO output frequencies.
In accompanying drawing 5, P401 pipes and N401 pipes are used as phase inverter and current source, and P402 pipes and N402 pipes are respectively by VBP and VBN
Control, suppress to flow through P401 pipes, the electric current of N401 pipes, i.e., the phase inverter being made up of P401 pipes and N401 pipes is in electric current and suppressed
State, they collectively form the one-level of ring oscillator.Wherein the input gate capacitance of rear stage, P401 and N401 drain terminal is over the ground
Electric capacity summation CL, its load capacitance as prime.The every one-level being made up of P401, P402, N401 and N402 is born to this
Carry electric capacity and carry out discharge and recharge.Charging and discharging currents are identical, for the I in figuredc1, therefore the frequency of N level electric current suppressive ring oscillators
Fosc can be represented with below equation：
Charging and discharging currents Idc1 in above formula, controlled, that is, be suppressed by VBP and VBN.According to analysis above,
Charging and discharging currents size is set by input control voltage.This structure can effectively suppress ambient noise and be made an uproar including power supply and substrate
The influence of sound, there is good anti-noise ability.
Ring oscillator should try one's best when designing reduces the size of wherein phase inverter, can so reduce each OSC nodes
Parasitic capacitance.After electric capacity reduces, the electric current required for reaching certain frequency will reduce, you can with certain bias current
Lower raising output frequency, also beneficial to the stability of VCO output frequencies, and such design is used greatly to reduce circuit
Power consumption.This ring oscillator is not only simple in construction, and by the size of the inverted device electric current of easily controlling stream, i.e., it is negative
The impulse electricity size of current of electric capacity is carried, so as to neatly control frequency of oscillation.
Accompanying drawing 8 is whole VCO current simulations result, it can be seen that average current is not more than 2.2mA, and maximum power dissipation does not surpass
7.26mW is crossed, in addition in fig. 7, the control electric current that VCO control voltages VT is converted into is I_R in figure, can be with bright from figure
It is aobvious to find out it is a kind of directrix sexual intercourse between the two.The electric current controlled by LDO outputs constant voltage is I1 in figure, and supply voltage
The electric current controlled is I2 in figure, and the electric current is VCO control electric currents, is also apparent linear relationship between VT.
Whole VCO circuit structures are simple, can effectively save chip area；Using 0.35 μm of technique；Whole VCO area
Only 0.02mm2；In addition chip is on the one hand further reduced in whole VCO only with the active device in standard CMOS process
Cost, while reduce influence of the technique change to output frequency.
Above is preferred embodiment of the present utility model, not makees any formal limitation to the utility model,
It is every according to the technical essence of the utility model to any simple modification, equivalent change and modification made for any of the above embodiments,
Belong in the range of utility model technical scheme.
Claims (5)
1. the VCO circuits of a kind of low-power high-performance, it is characterised in that including band-gap reference circuit, low pressure difference linearity voltage stabilizing electricity
Road LDO, current converter circuit and ring oscillator circuit, the band-gap reference circuit, low-dropout linear voltage-regulating circuit, electric current
Converter circuit and ring oscillator circuit are sequentially connected from left to right, the band-gap reference circuit be used to provide not with temperature and
The reference voltage of mains voltage variations, the low-dropout linear voltage-regulating circuit LDO are used to band-gap reference producing voltage doubles simultaneously
Output voltage is set to keep constant, the current converter circuit includes three layers of conversion equipment, the current converter circuit first
Low-dropout linear voltage-regulating circuit LDO outputs constant voltage is converted into control electric current by layer conversion equipmentI1, the electric current turn
Converter circuit second layer conversion equipment is by constant voltage control electric currentI1It is transformed into by supply voltage control electric currentI2, the electric current
Converter circuit third layer conversion equipment is by electric currentI2It is converted into controlling two of VCO frequency to suppress voltage VBP and VBN, it is described
Ring oscillator circuit is composed in parallel by Pyatyi oscillator.
A kind of 2. VCO circuits of low-power high-performance according to claim 1, it is characterised in that the band-gap reference electricity
Road includes eight FETs, and eight FETs include four N-type FETs and four p-type FETs.
3. the VCO circuits of a kind of low-power high-performance according to claim 1, it is characterised in that described including low voltage difference
Linear voltage-stabilizing circuit LDO includes nine FETs, and nine FETs include five N-type FETs and four p-types
FET.
A kind of 4. VCO circuits of low-power high-performance according to claim 1, it is characterised in that the current converter
Circuit includes ten FETs, and described ten FETs include five N-type FETs and five p-type FETs.
A kind of 5. VCO circuits of low-power high-performance according to claim 1, it is characterised in that the ring oscillator
Circuit is divided into Pyatyi oscillator and composed in parallel, including 24 FETs, and 24 FETs include ten
Two N-type FETs and 12 p-type FETs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720405210.8U CN206759422U (en) | 2017-04-18 | 2017-04-18 | A kind of VCO circuits of low-power high-performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720405210.8U CN206759422U (en) | 2017-04-18 | 2017-04-18 | A kind of VCO circuits of low-power high-performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206759422U true CN206759422U (en) | 2017-12-15 |
Family
ID=60613973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720405210.8U Active CN206759422U (en) | 2017-04-18 | 2017-04-18 | A kind of VCO circuits of low-power high-performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206759422U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112994445A (en) * | 2021-04-25 | 2021-06-18 | 四川蕊源集成电路科技有限公司 | Apparatus and method for reducing electromagnetic interference of DC-DC power supply |
-
2017
- 2017-04-18 CN CN201720405210.8U patent/CN206759422U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112994445A (en) * | 2021-04-25 | 2021-06-18 | 四川蕊源集成电路科技有限公司 | Apparatus and method for reducing electromagnetic interference of DC-DC power supply |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106961277A (en) | A kind of VCO circuits of low-power high-performance | |
| CN103166604B (en) | A kind of low-power consumption sheet internal clock produces circuit | |
| CN102064801B (en) | All-silicon clock generator realized on basis of complementary metal oxide semiconductor (CMOS) process | |
| CN105207670B (en) | It is segmented low pressure control gain ring oscillator and tuning slope change-over circuit | |
| CN104184469A (en) | Ring oscillator with low power consumption and low temperature coefficient | |
| CN114421766A (en) | High-precision oscillator circuit applied to switching power supply and having jitter frequency and slope compensation functions | |
| US10355643B2 (en) | Differential Colpitts voltage-controlled oscillator | |
| CN106209086A (en) | Voltage-controlled oscillator | |
| CN107124157A (en) | A kind of high q-factor, inductance value can coarse adjustment fine tuning broadband active inductance | |
| US20130009715A1 (en) | Inductance-capacitance (lc) oscillator | |
| CN206759422U (en) | A kind of VCO circuits of low-power high-performance | |
| CN113489460B (en) | RC oscillating circuit and RC oscillator | |
| CN108347242B (en) | Ring oscillator | |
| CN106160738B (en) | Ring voltage-controlled oscillator circuit | |
| CN105811925B (en) | Ring oscillator | |
| CN103414466B (en) | A kind of annular voltage controlled oscillator of high speed | |
| CN107959476B (en) | Low-power consumption current starvation type oscillator circuit | |
| CN107317580B (en) | High-stability oscillator circuit and implementation method thereof | |
| CN110336558A (en) | Oscillating circuit and integrated circuit | |
| CN110719070B (en) | Low-power consumption voltage-controlled oscillator based on dynamic threshold technology | |
| CN103812503A (en) | Differential delay unit circuit and ring oscillator | |
| CN111629463B (en) | Oscillating circuit | |
| CN105281762B (en) | The voltage control CMOS LC oscillators of anti-process fluctuation under 60GHz phaselocked loop low-voltages | |
| CN108933594A (en) | Voltage controlled oscillator and phaselocked loop | |
| CN208986908U (en) | A kind of annular voltage controlled oscillator, phaselocked loop and communication equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210816 Address after: No.88, East Zhongtong Road, Shuofang, Xinwu District, Wuxi City, Jiangsu Province, 214000 Patentee after: WUXI ROUM SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 214000 No.1 qianou Road, Wuxi City, Jiangsu Province Patentee before: JIANGSU VOCATIONAL College OF INFORMATION TECHNOLOGY |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.88, East Zhongtong Road, Shuofang, Xinwu District, Wuxi City, Jiangsu Province, 214000 Patentee after: Jiangsu Donghai Semiconductor Co.,Ltd. Address before: No.88, East Zhongtong Road, Shuofang, Xinwu District, Wuxi City, Jiangsu Province, 214000 Patentee before: WUXI ROUM SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |