CN113489460B - RC oscillating circuit and RC oscillator - Google Patents
RC oscillating circuit and RC oscillator Download PDFInfo
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- CN113489460B CN113489460B CN202110751914.1A CN202110751914A CN113489460B CN 113489460 B CN113489460 B CN 113489460B CN 202110751914 A CN202110751914 A CN 202110751914A CN 113489460 B CN113489460 B CN 113489460B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
- H03B5/129—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a bias voltage or a power supply
Abstract
The application relates to an RC oscillating circuit and an RC oscillator. The RC oscillation circuit comprises a bias circuit and an oscillation unit which are sequentially connected; the bias circuit comprises a first-stage self-adjusting loop and a second-stage self-adjusting loop; the first-stage self-adjusting loop comprises a first voltage drop unit and a first negative feedback circuit; the first negative feedback circuit adjusts the voltage value of the power supply voltage processed by the first voltage drop unit and outputs negative feedback voltage; the second-stage self-adjusting loop comprises a second voltage drop unit and a second negative feedback circuit; the second negative feedback circuit adjusts the voltage value of the negative feedback voltage processed by the second voltage drop unit and outputs an oscillating voltage for supplying power to the oscillating unit. The application simplifies the structure of the bias circuit, improves the self-adjusting capability of the bias circuit, realizes the purpose of low-power consumption high-precision voltage self-adjusting oscillator, improves the output frequency precision of the RC oscillator, and is beneficial to circuit integration and multi-occasion application.
Description
Technical Field
The present application relates to the field of radio frequency communications technologies, and in particular, to an RC oscillating circuit and an RC oscillator.
Background
The RC (resistor and capacitor) oscillator is used as a common signal generating circuit, has the characteristics of simple structure, low power consumption, low cost, easy integration and the like, and is widely applied to the on-chip low-frequency clock generating circuit. The RC oscillator utilizes the resistor-capacitor charge-discharge time delay unit to generate oscillation, the generated frequency is greatly influenced by power supply voltage, power supply noise and environmental temperature, and the electrical characteristics of various components forming the oscillator, and under different application occasions, different processes and temperature changes can influence the output frequency precision. Therefore, designing an oscillator whose oscillation output frequency is independent of process and temperature variation, and which has low power consumption, high accuracy, and satisfies a wide voltage range has become an important research direction.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the traditional oscillator has the problems of complex structure, high circuit power consumption and inapplicability to low-power-consumption application occasions.
Disclosure of Invention
In view of the above, it is necessary to provide an RC oscillating circuit and an RC oscillator that can simplify the structure and reduce power consumption.
In order to achieve the above object, in one aspect, an embodiment of the present application provides an RC oscillating circuit, including a bias circuit and an oscillating unit connected in sequence; the bias circuit comprises a first-stage self-adjusting loop and a second-stage self-adjusting loop;
the first-stage self-adjusting loop comprises a first voltage drop unit and a first negative feedback circuit; the first negative feedback circuit adjusts the voltage value of the power supply voltage processed by the first voltage drop unit and outputs negative feedback voltage;
the second-stage self-adjusting loop comprises a second voltage drop unit and a second negative feedback circuit; the second negative feedback circuit adjusts the voltage value of the negative feedback voltage processed by the second voltage drop unit and outputs an oscillating voltage for supplying power to the oscillating unit;
the first negative feedback circuit comprises a first MOS tube and a second MOS tube; the drain electrode of the first MOS tube and the grid electrode of the second MOS tube are both connected with the first voltage drop unit, and the grid electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with the second voltage drop unit; the second negative feedback circuit comprises a third MOS tube and a fourth MOS tube; the drain electrode of the third MOS tube and the grid electrode of the fourth MOS tube are connected with negative feedback voltage, and the grid electrode of the third MOS tube and the source electrode of the fourth MOS tube are both connected with the oscillating unit;
the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the fourth MOS tube; the drain electrode of the second MOS tube is connected with a power supply voltage; the source electrode of the first MOS tube and the source electrode of the third MOS tube are used for grounding.
In one embodiment, the bias circuit further includes a fifth MOS transistor and a sixth MOS transistor;
the grid electrode of the fifth MOS tube and the drain electrode of the fifth MOS tube are both connected with the source electrode of the first MOS tube; the source electrode of the sixth MOS tube is respectively connected with the source electrode of the third MOS tube and the source electrode of the fifth MOS tube, and the grid electrode of the sixth MOS tube and the drain electrode of the sixth MOS tube are used for grounding.
In one embodiment, the first voltage drop unit is a first current mirror; the second voltage drop unit is a second current mirror;
the first current mirror comprises a seventh MOS tube and an eighth MOS tube, and the grid electrode of the seventh MOS tube is connected with the grid electrode of the eighth MOS tube; the source electrode of the seventh MOS tube and the source electrode of the eighth MOS tube are connected with power supply voltage; the drain electrode of the eighth MOS tube is respectively connected with the drain electrode of the first MOS tube and the grid electrode of the second MOS tube; the drain electrode of the seventh MOS tube, the grid electrode of the seventh MOS tube and the grid electrode of the eighth MOS tube are used for grounding;
the second current mirror comprises a ninth MOS tube and a tenth MOS tube, and the grid electrode of the ninth MOS tube is connected with the grid electrode of the tenth MOS tube; the source electrode of the ninth MOS tube and the source electrode of the tenth MOS tube are connected with negative feedback voltage; the drain electrode of the tenth MOS tube is respectively connected with the drain electrode of the third MOS tube and the grid electrode of the fourth MOS tube; the drain electrode of the ninth MOS tube, the grid electrode of the ninth MOS tube and the grid electrode of the tenth MOS tube are used for grounding.
In one embodiment, the bias circuit further comprises a third current mirror;
the third current mirror comprises an eleventh MOS tube and a twelfth MOS tube; the grid electrode of the eleventh MOS tube is connected with the grid electrode of the twelfth MOS tube; the grid electrode of the eleventh MOS tube, the drain electrode of the eleventh MOS tube and the grid electrode of the twelfth MOS tube are connected with reference currents; the drain electrode of the twelfth MOS tube is respectively connected with the drain electrode of the seventh MOS tube, the grid electrode of the seventh MOS tube and the grid electrode of the eighth MOS tube; the source electrode of the eleventh MOS tube and the source electrode of the twelfth MOS tube are used for grounding.
In one of the embodiments of the present application,
the first MOS tube, the second MOS tube, the third MOS tube, the fourth MOS tube, the fifth MOS tube, the eleventh MOS tube and the twelfth MOS tube are NMOS tubes; the sixth MOS tube, the seventh MOS tube, the eighth MOS tube, the ninth MOS tube and the tenth MOS tube are PMOS tubes.
In one embodiment, the negative feedback voltage is greater than the oscillating voltage; the power supply voltage is greater than the lowest operating voltage of the bias circuit; the range of the power supply voltage comprises 1.8V to 3.6V;
the voltage value of the lowest working voltage is the sum of the negative feedback voltage, the gate-source voltage of the second MOS tube and the drain-source voltage of the eighth MOS tube.
In one embodiment, the oscillating unit comprises a periodic oscillating circuit and a compensation adjusting circuit;
the periodic oscillation circuit comprises a thirteenth MOS tube, a fourteenth MOS tube, a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube;
the source electrode of the thirteenth MOS tube, the source electrode of the fourteenth MOS tube and the source electrode of the fifteenth MOS tube are connected with oscillation voltage; the source electrode of the sixteenth MOS tube, the source electrode of the seventeenth MOS tube and the source electrode of the eighteenth MOS tube are used for grounding;
the grid electrode of the thirteenth MOS tube is respectively connected with the grid electrode of the sixteenth MOS tube and one end of the compensation adjusting circuit; the drain electrode of the thirteenth MOS tube is respectively connected with the grid electrode of the fourteenth MOS tube, the drain electrode of the sixteenth MOS tube and the grid electrode of the seventeenth MOS tube; the drain electrode of the fourteenth MOS tube is respectively connected with the grid electrode of the fifteenth MOS tube, the drain electrode of the seventeenth MOS tube and the grid electrode of the eighteenth MOS tube; the drain electrode of the fifteenth MOS tube and the drain electrode of the eighteenth MOS tube are connected with the other end of the compensation adjustment circuit.
In one embodiment, the compensation adjustment circuit includes a capacitance adjustment array and a compensation resistance array;
one end of the capacitance adjustment array is respectively connected with the grid electrode of the thirteenth MOS tube and the grid electrode of the sixteenth MOS tube, and the other end of the capacitance adjustment array is connected with one end of the compensation resistor array; the other end of the compensation resistor array is respectively connected with the drain electrode of the fifteenth MOS tube and the drain electrode of the eighteenth MOS tube.
In one embodiment, the thirteenth MOS transistor, the fourteenth MOS transistor, and the fifteenth MOS transistor are PMOS transistors; the sixteenth MOS tube, the seventeenth MOS tube and the eighteenth MOS tube are NMOS tubes;
the threshold voltage of the third MOS tube, the threshold voltage of the sixteenth MOS tube, the threshold voltage of the seventeenth MOS tube and the threshold voltage of the eighteenth MOS tube are all the same;
the threshold voltage of the sixth MOS tube, the threshold voltage of the thirteenth MOS tube, the threshold voltage of the fourteenth MOS tube and the threshold voltage of the fifteenth MOS tube are the same.
An RC oscillator comprises the RC oscillation circuit; the RC oscillator further comprises a clock output circuit connected with the oscillating unit.
One of the above technical solutions has the following advantages and beneficial effects:
the application adopts the bias circuit comprising the first-stage self-adjusting loop and the second-stage self-adjusting loop to output stable power supply voltage of the oscillating unit, replaces the traditional complex voltage bias adjusting structure, completes two-stage self-adjustment of the power supply voltage and improves the output frequency precision of the RC oscillator; the first-stage self-adjusting loop comprises a first negative feedback circuit, the second-stage self-adjusting loop comprises a second negative feedback circuit, and therefore two-stage negative feedback adjustment of power supply voltage is achieved, and the influence of the bias voltage of the oscillating unit on the change of the power supply voltage is reduced; when the power supply voltage generates large fluctuation, the bias circuit can rapidly self-regulate the bias voltage and stably supply power to the oscillating unit, so that the effect of being capable of working in a wide power supply voltage range is achieved. The application simplifies the structure of the bias circuit, improves the self-adjusting capability of the bias circuit, realizes the purpose of low-power consumption high-precision voltage self-adjusting oscillator, improves the output frequency precision of the RC oscillator, and is beneficial to circuit integration and multi-occasion application.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is a diagram of an application environment of an RC oscillating circuit in one embodiment;
FIG. 2 is a schematic diagram of an overall structure of an RC oscillator circuit according to one embodiment;
FIG. 3 is a schematic diagram of an RC oscillator circuit in one embodiment;
FIG. 4 is a schematic diagram of an RC oscillator circuit according to another embodiment;
FIG. 5 is a schematic diagram of a specific configuration of a bias circuit in one embodiment;
FIG. 6 is a schematic diagram of an oscillating unit in one embodiment;
FIG. 7 is a schematic diagram showing a specific structure of an oscillating unit in one embodiment;
FIG. 8 is a schematic diagram of an equivalent circuit of a capacitance adjustment array according to one embodiment;
FIG. 9 is a schematic diagram of an equivalent circuit of a compensation resistor array in one embodiment;
FIG. 10 is a schematic diagram of a circuit configuration of an RC oscillator in one embodiment;
FIG. 11 is a diagram illustrating the relationship between the output frequency of the RC oscillator and the power supply voltage according to one embodiment;
FIG. 12 is a graph showing the relationship between the output frequency and the temperature of the RC oscillator in one embodiment.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Embodiments of the application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that the terms first, second, etc. as used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element.
Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or be connected to the other element through intervening elements. Further, "connection" in the following embodiments should be understood as "electrical connection", "communication connection", and the like if there is transmission of electrical signals or data between objects to be connected.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof. Also, the term "and/or" as used in this specification includes any and all combinations of the associated listed items.
The traditional oscillator structure is composed of a band gap reference circuit, a current mirror circuit, a comparison voltage generating circuit, a periodic signal generating circuit, a non-overlapping clock output circuit and the like, and the bias voltage of the stable oscillator is provided by using band gap reference, LDO (Low Dropout Regulator, low dropout linear voltage regulator) and the like; however, the traditional structure adopts a band gap reference circuit, a low-dropout linear regulating circuit, a comparator circuit and the like, the loop structure is complex, the circuit power consumption is high, and the circuit is not suitable for low-power consumption application occasions; meanwhile, the traditional structure has low integration level, and the oscillation output frequency is easily influenced by factors such as process, voltage, temperature and the like.
Structurally, the application provides a simplified bias circuit, which is favorable for circuit integration and multi-occasion application instead of adopting voltage bias adjustment structures such as reference voltage, current source, LDO and the like. Meanwhile, in performance, the application adopts a two-stage self-adjusting bias voltage stabilizing structure, improves the self-adjusting capability of a bias circuit, achieves the purpose of wide power supply voltage operation, and further improves the output frequency precision of the RC oscillator.
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The RC oscillation circuit provided by the application can be applied to an application environment shown in figure 1. Specifically, fig. 1 shows an overall RC oscillator architecture employing the RC oscillating circuit of the present application, which may include sequentially connected rc_bias, rc_osc, and rc_clkout; wherein rc_bias may represent a BIAS circuit in the present application, rc_osc may represent an oscillation unit in the present application, and rc_clkout may represent a clock output circuit. Further, the bias circuit may be a voltage bias generating circuit, the oscillating unit may be a periodic oscillation generating circuit, and the clock output circuit may be a non-overlapping clock output circuit. It will be appreciated that the application can be applied in the field of clock counting.
In one embodiment, as shown in fig. 2, an RC oscillating circuit is provided, which is exemplified by application of the circuit to the RC oscillator in fig. 1, and includes a bias circuit 10 and an oscillating unit 20 connected in sequence; the bias circuit 10 includes a first stage self-adjusting loop 110 and a second stage self-adjusting loop 120;
the first stage self-tuning loop 110 includes a first voltage drop unit 112 and a first negative feedback circuit 114; the first negative feedback circuit 114 adjusts the voltage value of the power supply voltage processed by the first voltage drop unit 112 and outputs a negative feedback voltage;
the second stage self-regulating loop 120 includes a second voltage drop unit 122 and a second negative feedback circuit 124; the second negative feedback circuit 124 adjusts the voltage value of the negative feedback voltage processed by the second voltage drop unit 122, and outputs an oscillating voltage for supplying power to the oscillating unit 20;
as shown in fig. 3, the first negative feedback circuit 114 includes a first MOS transistor (MN 3) and a second MOS transistor (MN 4); the drain electrode of the first MOS tube (MN 3) and the grid electrode of the second MOS tube (MN 4) are both connected with the first voltage drop unit 112, and the grid electrode of the first MOS tube (MN 3) and the source electrode of the second MOS tube (MN 4) are both connected with the second voltage drop unit 122; the second negative feedback circuit 124 includes a third MOS transistor (MN 5) and a fourth MOS transistor (MN 6); the drain electrode of the third MOS tube (MN 5) and the grid electrode of the fourth MOS tube (MN 6) are connected with negative feedback Voltage (VT), and the grid electrode of the third MOS tube (MN 5) and the source electrode of the fourth MOS tube (MN 6) are both connected with the oscillating unit 20;
the grid electrode of the first MOS tube (MN 3) is respectively connected with the source electrode of the second MOS tube (MN 4) and the drain electrode of the fourth MOS tube (MN 6); the drain electrode of the second MOS tube (MN 4) is connected with a power supply Voltage (VDD); the source electrode of the first MOS tube (MN 3) and the source electrode of the third MOS tube (MN 5) are used for grounding.
Specifically, the first voltage drop unit 112 may perform voltage drop processing on the power supply Voltage (VDD) that is input, and output the voltage drop processed by the first voltage drop unit 112 to the first negative feedback circuit 114, and then the first negative feedback circuit 114 adjusts the voltage value of the power supply Voltage (VDD) that is processed by the first voltage drop unit 112, so as to output a negative feedback Voltage (VT); that is, the negative feedback Voltage (VT) in the present application may refer to the first stage negative feedback output voltage.
The second voltage drop unit 122 may perform voltage drop processing on the negative feedback Voltage (VT) received, and output the voltage drop processed by the second voltage drop unit 122 to the second negative feedback circuit 124, and then the second negative feedback circuit 124 adjusts the voltage value of the negative feedback Voltage (VT) processed by the second voltage drop unit 122, and outputs an oscillating Voltage (VP) for supplying power to the oscillating unit 20; i.e. the oscillating Voltage (VP) may refer to the second stage negative feedback output voltage; the oscillating Voltage (VP) may be referred to as an oscillator supply voltage.
The application can realize two-stage negative feedback regulation of the power supply Voltage (VDD) and reduce the influence of the bias voltage of the oscillating unit on the change of the power supply voltage; in addition, the bias circuit can replace the traditional complex voltage bias adjustment structure, such as a band gap reference circuit and a low dropout linear adjustment circuit, and for example, the bias circuit replaces the complex voltage bias adjustment structure such as reference voltage, a current source, LDO and the like, thereby simplifying the circuit structure and being beneficial to circuit integration and multi-occasion application. It should be noted that, the first voltage drop unit and the second voltage drop unit in the present application may refer to a unit device capable of performing voltage drop processing on an incoming voltage, and in some examples, a current mirror may be used to implement the functions of the first voltage drop unit and the second voltage drop unit, which is not limited in this application.
Further, as shown in fig. 3, the first negative feedback circuit may include a first MOS transistor (MN 3) and a second MOS transistor (MN 4), and the second negative feedback circuit may include a third MOS transistor (MN 5) and a fourth MOS transistor (MN 6). The bias circuit in the RC oscillation circuit can realize the two-stage self-adjustment function by comprising two negative feedback loops formed by MN3, MN4, MN5 and MN6, respectively adjust the voltage values of VT and VP through the two-stage negative feedback action, and stabilize the oscillation voltage VP output through the two-stage negative feedback loops where the VT and VP are positioned in a large power supply voltage variation range, thereby improving the output frequency precision of the RC oscillation circuit. In some embodiments, the negative feedback voltage is greater than the oscillating voltage, i.e., VT > VP.
The first stage self-tuning loop is described below in connection with a specific example: the input power supply voltage VDD is subjected to voltage drop by the first voltage drop unit, and then the VT voltage value is regulated by a negative feedback loop formed by MN3 and MN 4. When the power supply voltage is raised, the VT voltage is raised, namely VGMN3 is increased, the VDMN3 voltage is lowered according to the phase relation of the MOS tube, namely VGMN4 voltage in the loop is lowered, VSMN4 voltage is lowered, and the VT voltage is lowered at the moment. Similarly, after the voltage of the second-stage negative feedback voltage input voltage VT is reduced by the second voltage-reducing unit, the VP voltage value is continuously adjusted by the negative feedback formed by the self-adjusting loops MN5 and MN6, and the influence of the bias voltage of the oscillating unit on the change of the power supply voltage is reduced by the two-stage self-adjusting structure.
The application stabilizes the constant output of the voltage at the source voltage (node VP) of MN6 through two-stage negative feedback, and realizes the self-adjustment of low-power consumption high-precision voltage through the voltage division mode of two-stage negative feedback, thereby achieving the purpose of wide power supply voltage operation. In some embodiments, the range of the power supply voltage includes 1.8V to 3.6V, i.e. the range of the power supply voltage may be: 1.8V-3.6V.
In one embodiment, the bias circuit may further include a fifth MOS transistor and a sixth MOS transistor;
the grid electrode of the fifth MOS tube and the drain electrode of the fifth MOS tube are both connected with the source electrode of the first MOS tube; the source electrode of the sixth MOS tube is respectively connected with the source electrode of the third MOS tube and the source electrode of the fifth MOS tube, and the grid electrode of the sixth MOS tube and the drain electrode of the sixth MOS tube are used for grounding.
Specifically, as shown in fig. 4, the BIAS circuit (rc_bias) may further include a fifth MOS transistor (MN 2) and a sixth MOS transistor (MP 5). The grid electrode of the fifth MOS tube (MN 2) and the drain electrode of the fifth MOS tube (MN 2) are connected with the source electrode of the first MOS tube (MN 3); the source electrode of the sixth MOS tube (MP 5) is respectively connected with the source electrode of the third MOS tube (MN 5) and the source electrode of the fifth MOS tube (MN 2), and the grid electrode of the sixth MOS tube (MP 5) and the drain electrode of the sixth MOS tube (MP 5) are used for grounding.
It can be clear that the voltage value of the oscillating Voltage (VP) is the sum of the threshold voltage of the third MOS transistor (MN 5) and the threshold voltage of the sixth MOS transistor (MP 5); namely, in the application, loop bias node voltage: vp=vthmn5+vthmp5.
The voltage value of the negative feedback Voltage (VT) is the sum of the gate-source voltage of the first MOS tube (MN 3), the gate-source voltage of the fifth MOS tube (MN 2) and the threshold voltage of the sixth MOS tube (MP 5); namely, in the application, loop bias node voltage: vt=vgsmn3+vgsmn2+vthmp5.
According to the application, MN3, MN4, MN5 and MN6 are used for respectively adjusting VT and VP (VT > VP) voltage values through two-stage negative feedback actions, and the oscillating voltage VP is stabilized and output through the two-stage negative feedback loop where VT and VP are positioned in a large power supply voltage variation range, so that the output frequency precision of the RC oscillating circuit is improved.
In one embodiment, as shown in fig. 5, the first voltage drop unit is a first current mirror; the second voltage drop unit is a second current mirror;
the first current mirror comprises a seventh MOS tube (MP 0) and an eighth MOS tube (MP 1), and the grid electrode of the seventh MOS tube (MP 0) is connected with the grid electrode of the eighth MOS tube (MP 1); the source electrode of the seventh MOS tube (MP 0) and the source electrode of the eighth MOS tube (MP 1) are connected with a power supply Voltage (VDD); the drain electrode of the eighth MOS tube (MP 1) is respectively connected with the drain electrode of the first MOS tube (MN 3) and the grid electrode of the second MOS tube (MN 4); the drain electrode of the seventh MOS tube (MP 0), the grid electrode of the seventh MOS tube (MP 0) and the grid electrode of the eighth MOS tube (MP 1) are used for grounding;
the second current mirror comprises a ninth MOS tube (MP 3) and a tenth MOS tube (MP 4), and the grid electrode of the ninth MOS tube (MP 3) is connected with the grid electrode of the tenth MOS tube (MP 4); the source electrode of the ninth MOS tube (MP 3) and the source electrode of the tenth MOS tube (MP 4) are connected with negative feedback Voltage (VT); the drain electrode of the tenth MOS tube (MP 4) is respectively connected with the drain electrode of the third MOS tube (MN 5) and the grid electrode of the fourth MOS tube (MN 6); the drain electrode of the ninth MOS tube (MP 3), the grid electrode of the ninth MOS tube (MP 3) and the grid electrode of the tenth MOS tube (MP 4) are used for grounding.
In one embodiment, as shown in fig. 5, the bias circuit may further include a third current mirror;
the third current mirror may include an eleventh MOS transistor (MN 0) and a twelfth MOS transistor (MN 1); the grid electrode of the eleventh MOS tube (MN 0) is connected with the grid electrode of the twelfth MOS tube (MN 1); a grid electrode of the eleventh MOS tube (MN 0), a drain electrode of the eleventh MOS tube (MN 0) and a grid electrode of the twelfth MOS tube (MN 1) are connected with a reference current (IREF); the drain electrode of the twelfth MOS tube (MN 1) is respectively connected with the drain electrode of the seventh MOS tube (MP 0), the grid electrode of the seventh MOS tube (MP 0) and the grid electrode of the eighth MOS tube (MP 1); the source electrode of the eleventh MOS tube (MN 0) and the source electrode of the twelfth MOS tube (MN 1) are used for being grounded.
Specifically, the two-stage self-adjusting negative feedback loop of the present application may include MN3, MN4, MN5, and MN6; wherein, the first stage self-adjusting loop: the power supply voltage VDD is regulated by a negative feedback loop formed by MN3 and MN4 after being subjected to voltage drop by the current mirrors MP0 and MP 1. When the power supply voltage is raised, the VT voltage is raised, namely VGMN3 is increased, and according to the phase relation of the MOS tube, the VDMN3 voltage is lowered, namely VGMN4 voltage in the loop is lowered, and the VSMN4 voltage is lowered, and at the moment, the VT voltage is lowered. Similarly, after the voltage of the second-stage negative feedback voltage input VT is reduced by the current mirrors MP3 and MP4, the negative feedback formed by the self-adjusting loops MN5 and MN6 continuously adjusts the VP voltage value, and the influence of the bias voltage of the oscillating unit on the change of the power supply voltage is reduced by a two-stage self-adjusting structure.
In one embodiment, the supply Voltage (VDD) is greater than the lowest operating voltage (VDDmin) of the bias circuit; the range of the power supply voltage comprises 1.8V to 3.6V;
the voltage value of the lowest working voltage (VDDmin) may be the sum of the negative feedback Voltage (VT), the gate-source voltage (VGSMN 4) of the second MOS transistor, and the drain-source voltage (VDSMP 1) of the eighth MOS transistor.
Specifically, the voltage value of the negative feedback Voltage (VT) may be the sum of the oscillating Voltage (VP), the gate-source voltage (VGSMN 6) of the fourth MOS transistor, and the drain-source voltage (VDSMP 4) of the tenth MOS transistor; the loop bias node voltage expression in the present application may include:
VP＝VthMN5+VthMP5
VT＝VP+VGSMN6+VDSMP4＝VGSMN3+VGSMN2+VthMP5
VDDmin＝VT+VGSMN4+VDSMP1
furthermore, within a certain range (i.e., the supply voltage operating range of the bias circuit, which may be 1.8V-3.6V in one example), VP may be constantly output when the supply voltage satisfies VDD > VDDmin, thereby improving the output frequency accuracy of the oscillator.
According to the application, the purpose of wide power supply voltage operation is achieved by a voltage division mode of two-stage negative feedback; in one example, VDD can vary between 1.8v-3.6v by stabilizing the voltage constant output at the MN6 source voltage (node VP) with two-stage negative feedback, VP can be constant output as long as VDD > VDDmin.
In one embodiment, as shown in fig. 5, the first MOS transistor (MN 3), the second MOS transistor (MN 4), the third MOS transistor (MN 5), the fourth MOS transistor (MN 6), the fifth MOS transistor (MN 2), the eleventh MOS transistor (MN 0), and the twelfth MOS transistor (MN 1) are all NMOS transistors; the sixth MOS tube (MP 5), the seventh MOS tube (MP 0), the eighth MOS tube (MP 1), the ninth MOS tube (MP 3) and the tenth MOS tube (MP 4) are PMOS tubes.
It will be appreciated that the above-described circuit may be applied in devices such as RC oscillators or the like. The two-stage self-adjusting feedback structure can realize low-temperature drift high-precision voltage output, and has basically the same effect as the traditional band gap reference circuit or the low-voltage difference linear adjusting circuit in a plurality of low-power consumption occasions. Furthermore, the application not only simplifies the circuit structure, but also can replace the traditional complex voltage bias adjustment structure.
In one embodiment, as shown in fig. 6, the oscillation unit (rc_osc) may include a periodic oscillation circuit and a compensation adjustment circuit;
the periodic oscillation circuit can comprise a thirteenth MOS tube (MP 6), a fourteenth MOS tube (MP 7), a fifteenth MOS tube (MP 8), a sixteenth MOS tube (MN 7), a seventeenth MOS tube (MN 8) and an eighteenth MOS tube (MN 9);
the source electrode of the thirteenth MOS tube (MP 6), the source electrode of the fourteenth MOS tube (MP 7) and the source electrode of the fifteenth MOS tube (MP 8) are connected with an oscillating voltage; the source electrode of the sixteenth MOS tube (MN 7), the source electrode of the seventeenth MOS tube (MN 8) and the source electrode of the eighteenth MOS tube (MN 9) are used for grounding;
the grid electrode of the thirteenth MOS tube (MP 6) is respectively connected with the grid electrode of the sixteenth MOS tube (MN 7) and one end of the compensation adjusting circuit; the drain electrode of the thirteenth MOS tube (MP 6) is respectively connected with the grid electrode of the fourteenth MOS tube (MP 7), the drain electrode of the sixteenth MOS tube (MN 7) and the grid electrode of the seventeenth MOS tube (MN 8); the drain electrode of the fourteenth MOS tube (MP 7) is respectively connected with the grid electrode of the fifteenth MOS tube (MP 8), the drain electrode of the seventeenth MOS tube (MN 8) and the grid electrode of the eighteenth MOS tube (MN 9); the drain electrode of the fifteenth MOS tube (MP 8) and the drain electrode of the eighteenth MOS tube (MN 9) are connected with the other end of the compensation adjustment circuit.
Specifically, the application adopts a two-stage self-adjusting mode: when the power supply voltage fluctuates greatly, the BIAS circuit (RC_BIAS) can quickly self-regulate the BIAS voltage and stably supply power to the oscillating unit (RC_OSC), so that the effect of being capable of working in a wide power supply voltage range is achieved. Meanwhile, the above-described oscillation unit (rc_osc) may act as a periodic oscillation generating circuit in an RC oscillation circuit or an RC oscillator.
Further, in one embodiment, the thirteenth MOS transistor (MP 6), the fourteenth MOS transistor (MP 7), and the fifteenth MOS transistor (MP 8) are PMOS transistors; the sixteenth MOS tube (MN 7), the seventeenth MOS tube (MN 8) and the eighteenth MOS tube (MN 9) are NMOS tubes;
the threshold voltage of the third MOS tube (MN 5), the threshold voltage of the sixteenth MOS tube (MN 7), the threshold voltage of the seventeenth MOS tube (MN 8) and the threshold voltage of the eighteenth MOS tube (MN 9) are the same;
the threshold voltage of the sixth MOS tube (MP 5), the threshold voltage of the thirteenth MOS tube (MP 6), the threshold voltage of the fourteenth MOS tube (MP 7) and the threshold voltage of the fifteenth MOS tube (MP 8) are the same.
Specifically, in the present application, the threshold voltages of the bias circuit and the MOS transistor in the oscillation unit may be set as follows: vthmn5=vthmn7=vthmn8=vthmn9, vthmp5=vthmp6=vthmp7=vthmp8, and thus the oscillation unit efficiency can be improved. In the application, the threshold voltages of the bias circuit and the MOS tube in the oscillation unit can be equivalent to the initial loop gain provided by the bias circuit to the oscillation unit, which is beneficial to quick oscillation starting, namely the efficiency of the oscillation unit is improved.
It will be appreciated that the threshold voltage is determined by the parameters of the transistor itself, the different types of transistors Vth being different; the MOS transistor with the same threshold voltage can be realized by taking transistors with the same Vth.
In one embodiment, as shown in FIG. 7, the compensation adjustment circuit may include a capacitance adjustment array (C0) and a compensation resistance array (R0);
one end of the capacitance adjustment array (C0) is respectively connected with the grid electrode of the thirteenth MOS tube (MP 6) and the grid electrode of the sixteenth MOS tube (MN 7), and the other end of the capacitance adjustment array is connected with one end of the compensation resistor array (R0); the other end of the compensating resistor array (R0) is respectively connected with the drain electrode of the fifteenth MOS tube (MP 8) and the drain electrode of the eighteenth MOS tube (MN 9).
Specifically, in the present application, the capacitance adjustment array (C0) may be implemented using a high-precision capacitance adjustment array; and the compensating resistor array (R0) can be realized by adopting a positive and negative temperature coefficient compensating resistor array structure. Furthermore, the oscillation unit (RC_OSC) adopts a positive and negative temperature coefficient compensation resistor array structure and a high-precision capacitance adjustment array, so that the output oscillation frequency achieves the low-temperature drift effect.
The positive and negative temperature coefficient compensation resistor array structure can be an equivalent circuit of R0; the high precision capacitance adjustment array may be an equivalent circuit of C0. The oscillation unit (RC_OSC) is used as a periodic oscillation generating circuit, and based on the two RC array structures (C0 and R0), temperature compensation and accurate frequency output are realized, namely the output oscillation frequency reaches the low temperature drift effect.
It should be noted that the BIAS circuits in fig. 6 and fig. 7 may be implemented by using the BIAS circuit (rc_bias) in the foregoing embodiments, which is not described herein.
In some embodiments, the high-precision capacitance adjustment array is an equivalent circuit of C0, which can be implemented by a plurality of capacitance and switch combinations, and the specific equivalent circuit can refer to fig. 8; the equivalent circuit of the positive and negative temperature coefficient compensating resistor array structure R0 can be realized by combining a plurality of resistors and switches, and the specific equivalent circuit can be seen in FIG. 9.
The application adopts a two-stage self-adjusting feedback structure to replace a band gap reference circuit and a low-voltage difference linear adjusting circuit, is applicable to an oscillator bias power supply unit with a wide working power supply range in a two-stage self-adjusting mode, and adopts a positive and negative temperature coefficient compensation resistor array structure and a high-precision capacitance adjusting array to achieve the effects of supporting a wide working voltage range and low temperature drift.
In one embodiment, an RC oscillator is provided, including the RC oscillating circuit described above; the RC oscillator further comprises a clock output circuit connected with the oscillating unit.
Specifically, as shown in fig. 10, the RC oscillator of the present application may include a BIAS circuit (rc_bias), an oscillation unit (rc_osc), and a clock output circuit (rc_clkout) connected in sequence; further, the bias circuit may be a voltage bias generating circuit, the oscillating unit may be a periodic oscillation generating circuit, and the clock output circuit may be a non-overlapping clock output circuit.
That is, the RC oscillator may include a voltage bias generation circuit, a periodic oscillation generation circuit, and a non-overlapping clock output circuit connected in sequence. The application adopts the two-stage self-adjusting bias circuit and the oscillating unit with the compensation adjusting circuit, thereby realizing the purpose of the low-power consumption high-precision voltage self-adjusting oscillator.
Based on the application, the bias circuit is simplified to a certain extent in structure, and the bias circuit is favorable for circuit integration and multi-occasion application instead of adopting the traditional voltage bias adjustment structure such as reference voltage, current source, LDO and the like. In performance, the two-stage self-adjusting bias voltage stabilizing structure is adopted, so that the self-adjusting capability of the bias circuit is improved, the purpose of wide power supply voltage operation is achieved, and the output frequency of the RC oscillator is further improved.
In one example, the test result and the data analysis are performed by adopting the method, and the oscillator output frequency test result is obtained as follows:
as shown in the relationship between the output frequency and the power supply voltage in fig. 11 and the relationship between the output frequency and the temperature in fig. 12, it is known that the actual test result shows that the central output frequency is 32.125KHz at the room temperature of 25 ℃, and the power supply voltage has a variation range of: 1.8V-3.6V, the output frequency variation is 6.3X10 -4 V; temperature change range: -40 ℃ -120 ℃, the output frequency is changed to: 2.15X10 -5 /℃。
Above, the application adopts the two-stage self-adjusting feedback structure to replace the traditional complex structure, and adopts the two-stage self-adjusting mode: when the power supply voltage generates large fluctuation, the bias circuit can rapidly self-regulate the bias voltage and stably supply power to the oscillating unit, so that the effect of being capable of working in a wide power supply voltage range is achieved. The oscillating unit adopts a positive and negative temperature coefficient compensating resistor array structure and a high-precision capacitance adjusting array, so that the output oscillating frequency achieves the low-temperature drift effect.
In the description of the present specification, reference to the terms "some embodiments," "other embodiments," "desired embodiments," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. An RC oscillating circuit is characterized by comprising a biasing circuit and an oscillating unit which are connected in sequence; the bias circuit comprises a first-stage self-adjusting loop and a second-stage self-adjusting loop;
the first-stage self-adjusting loop comprises a first voltage drop unit and a first negative feedback circuit; the first negative feedback circuit adjusts the voltage value of the power supply voltage processed by the first voltage drop unit and outputs negative feedback voltage;
the second-stage self-adjusting loop comprises a second voltage drop unit and a second negative feedback circuit; the second negative feedback circuit adjusts the voltage value of the negative feedback voltage processed by the second voltage drop unit and outputs an oscillating voltage for supplying power to the oscillating unit;
the first negative feedback circuit comprises a first MOS tube and a second MOS tube; the drain electrode of the first MOS tube and the grid electrode of the second MOS tube are both connected with the first voltage drop unit, and the grid electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with the second voltage drop unit; the second negative feedback circuit comprises a third MOS tube and a fourth MOS tube; the drain electrode of the third MOS tube and the grid electrode of the fourth MOS tube are connected with the negative feedback voltage, and the grid electrode of the third MOS tube and the source electrode of the fourth MOS tube are both connected with the oscillating unit;
the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the fourth MOS tube; the drain electrode of the second MOS tube is connected to the power supply voltage; the source electrode of the first MOS tube and the source electrode of the third MOS tube are used for grounding.
2. The RC oscillating circuit of claim 1, wherein the biasing circuit further comprises a fifth MOS transistor and a sixth MOS transistor;
the grid electrode of the fifth MOS tube and the drain electrode of the fifth MOS tube are connected with the source electrode of the first MOS tube; the source electrode of the sixth MOS tube is respectively connected with the source electrode of the third MOS tube and the source electrode of the fifth MOS tube, and the grid electrode of the sixth MOS tube and the drain electrode of the sixth MOS tube are used for grounding.
3. The RC oscillating circuit of claim 2, wherein the first voltage drop unit is a first current mirror; the second voltage drop unit is a second current mirror;
the first current mirror comprises a seventh MOS tube and an eighth MOS tube, and the grid electrode of the seventh MOS tube is connected with the grid electrode of the eighth MOS tube; the source electrode of the seventh MOS tube and the source electrode of the eighth MOS tube are connected to the power supply voltage; the drain electrode of the eighth MOS tube is respectively connected with the drain electrode of the first MOS tube and the grid electrode of the second MOS tube; the drain electrode of the seventh MOS tube, the grid electrode of the seventh MOS tube and the grid electrode of the eighth MOS tube are used for grounding;
the second current mirror comprises a ninth MOS tube and a tenth MOS tube, and the grid electrode of the ninth MOS tube is connected with the grid electrode of the tenth MOS tube; the source electrode of the ninth MOS tube and the source electrode of the tenth MOS tube are connected with the negative feedback voltage; the drain electrode of the tenth MOS tube is respectively connected with the drain electrode of the third MOS tube and the grid electrode of the fourth MOS tube; the drain electrode of the ninth MOS tube, the grid electrode of the ninth MOS tube and the grid electrode of the tenth MOS tube are used for grounding.
4. The RC oscillating circuit of claim 3, wherein the biasing circuit further comprises a third current mirror;
the third current mirror comprises an eleventh MOS tube and a twelfth MOS tube; the grid electrode of the eleventh MOS tube is connected with the grid electrode of the twelfth MOS tube; the grid electrode of the eleventh MOS tube, the drain electrode of the eleventh MOS tube and the grid electrode of the twelfth MOS tube are connected with reference currents; the drain electrode of the twelfth MOS tube is respectively connected with the drain electrode of the seventh MOS tube, the grid electrode of the seventh MOS tube and the grid electrode of the eighth MOS tube; the source electrode of the eleventh MOS tube and the source electrode of the twelfth MOS tube are used for being grounded.
5. The RC oscillator circuit of claim 4, wherein,
the first MOS tube, the second MOS tube, the third MOS tube, the fourth MOS tube, the fifth MOS tube, the eleventh MOS tube and the twelfth MOS tube are NMOS tubes; the sixth MOS tube, the seventh MOS tube, the eighth MOS tube, the ninth MOS tube and the tenth MOS tube are PMOS tubes.
6. The RC oscillating circuit of claim 4, wherein the negative feedback voltage is greater than the oscillating voltage; the power supply voltage is greater than the lowest operating voltage of the bias circuit; the value range of the power supply voltage comprises 1.8V to 3.6V;
the voltage value of the lowest working voltage is the sum of the negative feedback voltage, the gate-source voltage of the second MOS tube and the drain-source voltage of the eighth MOS tube.
7. The RC oscillating circuit of claim 2, wherein the oscillating unit comprises a periodic oscillating circuit and a compensation adjusting circuit;
the periodic oscillation circuit comprises a thirteenth MOS tube, a fourteenth MOS tube, a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube;
the source electrode of the thirteenth MOS tube, the source electrode of the fourteenth MOS tube and the source electrode of the fifteenth MOS tube are connected with the oscillating voltage; the source electrode of the sixteenth MOS tube, the source electrode of the seventeenth MOS tube and the source electrode of the eighteenth MOS tube are used for grounding;
the grid electrode of the thirteenth MOS tube is respectively connected with the grid electrode of the sixteenth MOS tube and one end of the compensation adjustment circuit; the drain electrode of the thirteenth MOS tube is respectively connected with the grid electrode of the fourteenth MOS tube, the drain electrode of the sixteenth MOS tube and the grid electrode of the seventeenth MOS tube; the drain electrode of the fourteenth MOS tube is respectively connected with the grid electrode of the fifteenth MOS tube, the drain electrode of the seventeenth MOS tube and the grid electrode of the eighteenth MOS tube; the drain electrode of the fifteenth MOS tube and the drain electrode of the eighteenth MOS tube are connected with the other end of the compensation adjustment circuit.
8. The RC oscillating circuit of claim 7, wherein the compensation adjustment circuit comprises a capacitance adjustment array and a compensation resistance array;
one end of the capacitance adjustment array is respectively connected with the grid electrode of the thirteenth MOS tube and the grid electrode of the sixteenth MOS tube, and the other end of the capacitance adjustment array is connected with one end of the compensation resistor array; the other end of the compensation resistor array is respectively connected with the drain electrode of the fifteenth MOS tube and the drain electrode of the eighteenth MOS tube.
9. The RC oscillating circuit of claim 7, wherein the thirteenth MOS transistor, the fourteenth MOS transistor, and the fifteenth MOS transistor are PMOS transistors; the sixteenth MOS tube, the seventeenth MOS tube and the eighteenth MOS tube are NMOS tubes;
the threshold voltage of the third MOS tube, the threshold voltage of the sixteenth MOS tube, the threshold voltage of the seventeenth MOS tube and the threshold voltage of the eighteenth MOS tube are all the same;
the threshold voltage of the sixth MOS tube, the threshold voltage of the thirteenth MOS tube, the threshold voltage of the fourteenth MOS tube and the threshold voltage of the fifteenth MOS tube are all the same.
10. An RC oscillator comprising an RC oscillating circuit as claimed in any one of claims 1 to 9; the RC oscillator further comprises a clock output circuit connected with the oscillating unit.
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