CN206751971U - A kind of sapphire crystal growth crucible - Google Patents
A kind of sapphire crystal growth crucible Download PDFInfo
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- CN206751971U CN206751971U CN201720391081.1U CN201720391081U CN206751971U CN 206751971 U CN206751971 U CN 206751971U CN 201720391081 U CN201720391081 U CN 201720391081U CN 206751971 U CN206751971 U CN 206751971U
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- crystal growth
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Abstract
The utility model discloses a kind of sapphire growth crucible, including crucible body, the crucible body includes side wall and the base being connected, the inner plane of the base is provided with concaveconvex structure, the concaveconvex structure includes groove and projection, and the opening width of the groove is more than the width of bottom portion of groove.The utility model, which provides, a kind of to be optimized crucible bottom thermograde, reduces the sapphire crystal growth crucible that crystal falls the crack probability after crucible extremely.
Description
Technical field
It the utility model is related to crystal production technical field, more particularly to a kind of sapphire crystal growth crucible.
Background technology
Sapphire fusing point is 2045 DEG C, has fusing point height, heat conduction is good, hardness is high, electrical insulating property is good, strong alkali-acid resistance is rotten
Erosion, the features such as transmission region is wide, be widely used in the civil equipments such as mobile phone screen, minute surface, and be applied to guided missile dome,
Go straight up to the military industry equipments such as arbor.
The growing method of sapphire crystal have it is a variety of, mainly including kyropoulos, heat-exchanging method, EFG technique etc..Wherein, use
The crystal defect of kyropoulos growth is few, and dislocation density is low, is the main flow growing method of sapphire industry.Kyropoulos abbreviation KY methods,
Its principle is that raw material first is heated into fusing to form melt, then touches bath surface with the seed crystal of monocrystalline, in seed crystal and melt
Solid liquid interface on start to grow the monocrystalline of monoclinic crystal structure identical with seed crystal, seed crystal is slowly lifted upwards, seed crystal to
Brilliant neck was formed after upper lifting a period of time, after melt and the freezing rate at seed crystal interface are stable, seed crystal no longer lifts, only with drop
Low-power controls the mode of cooldown rate monocrystalline is gradually down solidified from top, i.e., by control the thermograde of melt come
The speed of growth of crystal is controlled, until eventually forming a complete single-crystal boule.
In practical application in industry, the fusing of raw material and sapphire growth course are realized in the crucible in single crystal growing furnace
, for existing crucible structure as shown in figure 1, crucible includes side wall 1 and base 2, the inner surface of its center base 2 is plane.Raw material
The viscous drag and thermal conduction resistance of the melt formed after fusing are smaller so that and melt flow rate is relatively large, and heat exchange is rapid,
This can cause the thermograde of crucible bottom smaller and unstable so that the controllability of sapphire growth speed reduces, in crystal
Later growth is also easy to produce the too fast phenomenon of crystal growth.In addition, under normal circumstances crystal be suspended in crucible but not with crucible
It is in contact, after crystal falls crucible extremely, because the contact area of crystal and crucible bottom is larger, single crystal growing furnace is transferred in crucible
Crystal heat it is more, cause the crystals temperature difference to increase, and the stress of crystals is directly proportional to the temperature difference, in turn results in crystalline substance
The excessive probability increase for producing cracking of body stress, improves production cost.
Therefore, it is unstable to solve crucible bottom thermograde, reduce crystal fall extremely the crack probability after crucible have it is important
Meaning.
Utility model content
In order to overcome problem present in correlation technique, the utility model, which provides one kind, can optimize crucible bottom temperature ladder
Degree, reduce the sapphire crystal growth crucible that crystal falls the crack probability after crucible extremely.
To achieve the above object, the utility model employs following technical scheme：
A kind of sapphire crystal growth crucible, including crucible body, the crucible body include the side wall that is connected and
Base, the inner plane of the base are provided with concaveconvex structure, and the concaveconvex structure includes groove and projection, and the groove is opened
Width is more than the width of bottom portion of groove at mouthful.
Optionally, the groove includes the first groove and the second groove, and first groove is at least provided with two and mutual
Parallel, second groove is at least provided with two and parallel to each other；
First groove intersects with the second groove on the inner plane of base.
Optionally, first groove and the second groove are linear inverted trapezoidal groove, wherein, the first groove and second recessed
Groove intersects vertically, and the upper bottom a of inverted trapezoidal groove scope is 2-5mm, and the scope for the b that goes to the bottom is 4-10mm, and high h scope is 1-
5mm。
Optionally, the inverted trapezoidal groove size of first groove and the second groove is identical, first groove and second recessed
Groove is uniform omnidirectional distribution, and the projection of formation is size identical trapezoid body.
Optionally, first groove and the second groove are arc-shaped slot, and the radius R of arc-shaped slot scope is 2
~5mm, first groove intersect with the second texturearunaperpendicular and form projection.
Optionally, first groove and the second groove are size identical arc-shaped slot, every first groove it
Between interval and every second groove between interval it is equal, first groove and the second groove are uniform omnidirectional distribution
And it is crossed to form projection.
Optionally, the cross sectional shape of the groove is V-arrangement or ellipse arc.
The utility model also provides another sapphire crystal growth crucible, including crucible body, the crucible sheet
Body includes side wall and the base being connected, and the inner plane of the base is provided with concaveconvex structure, and the concaveconvex structure includes setting
Multiple projections in chassis interior plane are put, space is formed between the multiple projection, the space bottom width, which is less than, to be opened
Width at mouthful.
Optionally, the projection is size identical hemisphere, and projection is uniformly distributed arrangement on the inner plane of base,
The hemispheroidal radius is 2-5mm.
Optionally, the projection is shaped as prismatoid or spheroid.
The utility model reduces stream of the melt in crucible by setting concaveconvex structure in the base inner surface of crucible
Dynamic speed, realize the technique effect of optimization crucible bottom thermograde, meanwhile, when sapphire crystal in growth course it is abnormal
Reduce when falling crucible with the contact area of crucible, reduce heat transfer rate, reduce the stress of crystals, it is brilliant to have reached reduction
Body falls the technique effect of the crack probability after crucible extremely.
Brief description of the drawings
In order to illustrate more clearly of the technical solution of the utility model, below by the required accompanying drawing used in embodiment
It is briefly described, it should be apparent that, for those of ordinary skills, do not paying the premise of creative labor
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is existing long crucible structure schematic diagram；
Fig. 2 is a kind of crucible cross-sectional view of embodiment of the present utility model；
Fig. 3 is a kind of crucible overlooking the structure diagram of embodiment of the present utility model；
Fig. 4 is a kind of schematic cross-section of the inverted trapezoidal groove of embodiment of the present utility model：
Fig. 5 is the crucible cross-sectional view of another embodiment of the present utility model：
Fig. 6 is the crucible overlooking the structure diagram of another embodiment of the present utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clear, complete description.Obviously, described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
The utility model provides a kind of sapphire crystal growth crucible, and the crucible includes crucible body, the crucible
Body includes side wall 1 and the base 2 being connected, and concaveconvex structure, the concaveconvex structure are provided with the inner plane of the base 2
Including groove 3 and projection 4, the opening width of the groove 3 is more than the width of the bottom of groove 3, to avoid working as opening width
Opening of the unfashioned Binding in groove 3 when too small so that melt can not flow, and influence the follow-up growth of crystal
Journey.It is that the utility model is fluted by being set in the plane of base 2 of crucible compared with the crucible of plane with existing bottom
3 structures being combined with projection 4, reduce the flow velocity of melt in crucible, and rate of heat exchange reduces so that crucible bottom temperature ladder
Degree can be more stable, and then strengthens the controllability of thermograde, the temperature control operation being easy in production process.Meanwhile crystal
Caused impurity can be stored in groove 3 to greatest extent in process of production, be advantageous to reduce in crystal ending growth course
The impurity content of crystal.
The utility model has various embodiments.For example, the groove 3 can include the first different groove of bearing of trend
31 and second groove 32, first groove 31 is at least provided with two and parallel to each other, second groove 32 at least provided with
Two and it is parallel to each other, the first groove 31 intersects with the second groove 32 on the inner plane of base 2, and is formed corresponding
Projection 4.Wherein, the first groove 31 and the second groove 32 are that linear pattern or shaped form and bearing of trend can not do specific limit
It is fixed.The groove 32 of first groove 31 and second is provided parallel to structure has guide effect to melt flows in crucible, makes
The heat exchange and flow direction for obtaining melt keep stabilising direction relatively, are easy to control and regulation to crucible internal temperature gradient.
Fig. 2 to Fig. 4 is a kind of structural representation of embodiment of the present utility model, on the inner surface of stool 2
First groove 31 and the second groove 32 are arranged to structure identical linear pattern inverted trapezoidal groove, the upper bottom a of inverted trapezoidal groove model
It is 2-5mm to enclose, and the scope for the b that goes to the bottom is 4-10mm, and high h scope is 1-5mm.The groove 3 includes intersecting vertically first recessed
The groove 32 of groove 31 and second, the groove 32 of the first groove 31 and second is crossed to form projection 4, in the size range of inverted trapezoidal groove
Interior size to the first groove 31 and the second groove 32 and space between distance and do not do excessive restriction, now projection 4
Shape and dimensional structure be that mutual alignment relation between size and groove 3 by every groove 3 determines.The present embodiment
By being distributed a series of orthogonal inverted trapezoidal grooves in the plane of base 2 of crucible, a series of raised 4 are formed, crucible can be optimized
Bottom temp gradient, reduce melt flow.Used crucible bottom is plane in the prior art scheme, crystal growth mistake
Caused impurity can be adhered to crystal bottom periphery in journey, form ring-type polycrystalline material, above-mentioned polycrystalline material stress is larger, works as crystalline substance
After body drops extremely, crack probability is big.And used by the present embodiment crucible structure cause it is caused miscellaneous in crystal growing process
Matter can be stored in inverted trapezoidal groove to greatest extent, reduce the impurity content in crystal, and reduction is adhered to crystal bottom periphery
Polycrystalline material quantity.
Preferably, the interval between the interval between every first groove 31 and every second groove 32 is set to
Identical size, and the groove 3 of the section shape being spaced between two grooves 3 and inverted trapezoidal shape is centrosymmetric, i.e., it is described
First groove 31 and the second groove 32 are uniform omnidirectional distribution, and the projection 4 of formation is size identical trapezoid body.In reality
The stress intensity of crystals is directly proportional to the temperature difference in production, when crystal falls crucible extremely, the big place with crucible contact area,
Heat transfer is more, and the temperature difference is larger, and the less place of contact area, heat transfer are less, and the temperature difference is smaller.And in the present embodiment
Contact of the crystal with crucible is a contact and uniform multiple spot distribution, and contact area is small, and heat transfer is less and more uniform, crystal
The internal temperature difference can diminish, and stress will also decrease, and then reduce crystal and fall the probability to be ftractureed after crucible extremely.
Fig. 5 and Fig. 6 be the utility model another kind embodiment structural representation, the interior surface of the stool 2
The first groove 31 and the second groove 32 set is structure identical arc-shaped slot, and the radius R of arc-shaped slot scope is 2
~5mm.The groove 32 of first groove 31 and second intersects vertically and forms projection 4, right in the size range of arc-shaped slot
The size of first groove 31 and the second groove 32 and space between distance and do not do excessive setting, now the shape of projection 4
Shape and dimensional structure are that the mutual alignment relation between radius size and groove 3 by every groove 3 determines.
Preferably, the groove 32 of the first groove 31 and second intersects vertically, and between every first groove 31 between
Every and every second groove 32 between interval it is equal, i.e., described first groove 31 and the second groove 32 are uniform orthogonal
Distribution, and form corresponding projection 4.The projection 4 formed in the present embodiment is also uniform omnidirectional distribution so that when crystal with
Contact point is uniform when the projection 4 of crucible bottom is in contact, can steady decrease conduct the heat into crystal, while melt is in earthenware
Flow velocity fluctuation in crucible reduces, and the controllability of thermograde is more preferable.
In addition to the groove 3 of above two form, the utility model can also use the groove 3 or difference of other forms
It is combined between the groove 3 of cross sectional shape, for example, the cross sectional shape of the groove 3 can also be V-arrangement or ellipse arc,
Require that the opening width of the groove 3 is more than the width of the bottom of groove 3 when using ellipse arc, to avoid unfashioned crystalline substance
Body is adhered to the opening of groove 3, influences the growth course of crystal.
Certainly, above-mentioned first groove 31 is parallel to each other and the second groove 32 is parallel to each other that simply one kind of groove 3 is set
The citing rather than restriction of mode, the relative position relation between the groove 3 can not also do above-mentioned restriction, when groove 3
Between it is interlaced when can also form corresponding projection 4, reach and reduce when crystal falls crucible extremely and the contact area of crucible
Effect, while realize the effect for reducing crucible bottom melt flows.
The concaveconvex structure can also use another implementation, including be arranged on the inner plane of stool 2
Multiple projections, form corresponding space between the projection, and the space is another using plane where the inner surface of base 2 as bottom
Hold and be less than opening width for opening, the bottom width of its void so that unfashioned crystal will not in growth course
Block the opening in space, the space can allow the melt flows in crucible, reach effect same during with setting groove 3.
Another embodiment of the present utility model can be that multiple projections are provided with the interior surface of stool 2, described
Projection is size identical hemisphere, and the scope of the hemispheroidal radius R is 2-5mm.Inner surface of the projection in base 2
On be uniformly distributed arrangement so that between projection formed rule space, the bottom width scope in the space is 0~2mm.When
So, the arrangement mode of the projection rule is the effect for doing the thermograde of bottom for control evenly, actual convexity
The arrangement mode and size of block can not do excessive limitation.In addition, the shape of the projection can also use except hemisphere
The structures such as prismatoid, spheroid, stabilization is changed using raised brim during prismatoid, be easy to guide the flow direction of melt, while also can
The effect of contact area when the reduction crystal for reaching good is in contact with crucible.When projection uses spheroid, it is also necessary to protect
The bottom width for demonstrate,proving the space is less than opening width, and having sticking unshaped crystal during avoiding too small openings blocks sky
Gap, excessively hinder the flowing of melt.The effect obtained when the projection uses spheroid with hemisphere is similar, while can be with
By selecting suitable spheroid structure to be easily adjusted to the size and shape in space.
In the structure that the projection of the present embodiment and space are combined, the projection enables to the melt flow in crucible
Reduce, the space of rule enables melt to have metastable flow direction in crucible bottom, is easy to heat by controlling
Power realizes the control to melt temperature gradient.Caused impurity can be stored in crystal to greatest extent in process of production simultaneously
In space, be advantageous to reduce the impurity content of crystal in crystal ending growth course.
The a diameter of 500mm of crucible body being related in above-mentioned multiple embodiments, is highly 650~700mm, the side wall
1 thickness is 15~20mm, and the thickness of the base 2 is 50-70mm.The inwall of wherein described side wall 1 is connected one with base 2
The thickness at end is more than the other end so that the inclined plane and the angle of the axis of crucible body that the inwall of side wall 1 is formed are 1 °.
Those skilled in the art will readily occur to this practicality after considering specification and putting into practice utility model disclosed herein
New other embodiments.The utility model is intended to any modification, purposes or adaptations of the present utility model,
These modifications, purposes or adaptations follow general principle of the present utility model and undocumented including the utility model
Common knowledge or conventional techniques in the art.Description and embodiments are considered only as exemplary, and this practicality is new
The scope of type is only limited by appended claim.
Claims (10)
1. a kind of sapphire crystal growth crucible, including crucible body, the crucible body include the side wall (1) being connected and
Base (2), it is characterised in that：
The inner plane of the base (2) is provided with concaveconvex structure, and the concaveconvex structure includes groove (3) and projection (4), described
The opening width of groove (3) is more than the width of groove (3) bottom.
2. sapphire crystal growth crucible according to claim 1, it is characterised in that：
The groove (3) includes the first groove (31) and the second groove (32), first groove (31) at least provided with two simultaneously
And it is parallel to each other, second groove (32) is at least provided with two and parallel to each other；
First groove (31) is intersected with the second groove (32) on the inner plane of base (2).
3. sapphire crystal growth crucible according to claim 2, it is characterised in that：
First groove (31) and the second groove (32) they are linear inverted trapezoidal groove, wherein, the first groove (31) and second
Groove (32) intersects vertically, and the upper bottom a of inverted trapezoidal groove scope is 2-5mm, and the scope for the b that goes to the bottom is 4-10mm, high h model
It is 1-5mm to enclose.
4. sapphire crystal growth crucible according to claim 3, it is characterised in that：
First groove (31) is identical with the inverted trapezoidal groove size of the second groove (32), first groove (31) and second recessed
Groove (32) is uniform omnidirectional distribution, and the projection (4) of formation is size identical trapezoid body.
5. sapphire crystal growth crucible according to claim 2, it is characterised in that：
First groove (31) and the second groove (32) are arc-shaped slot, the radius R of arc-shaped slot scope is 2~
5mm, first groove (31) intersect vertically with the second groove (32) and formed raised (4).
6. sapphire crystal growth crucible according to claim 5, it is characterised in that：
First groove (31) and the second groove (32) are size identical arc-shaped slot, every first groove (31) it
Between interval and every second groove (32) between interval it is equal, first groove (31) and the second groove (32) are
Uniform omnidirectional distribution is simultaneously crossed to form raised (4).
7. sapphire crystal growth crucible according to claim 1, it is characterised in that：
The cross sectional shape of the groove (3) is V-arrangement or ellipse arc.
8. a kind of sapphire crystal growth crucible, including crucible body, the crucible body include the side wall (1) being connected and
Base (2), it is characterised in that：
The inner plane of the base (2) is provided with concaveconvex structure, and the concaveconvex structure includes being arranged on base (2) inner plane
On multiple projections, form space between the multiple projection, the bottom width in the space is less than opening width.
9. sapphire crystal growth crucible according to claim 8, it is characterised in that：
The projection is size identical hemisphere, and projection is uniformly distributed arrangement, the hemisphere on the inner plane of base (2)
The radius of body is 2-5mm.
10. sapphire crystal growth crucible according to claim 8, it is characterised in that：The shape of the projection is ladder
Body or spheroid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720391081.1U CN206751971U (en) | 2017-04-14 | 2017-04-14 | A kind of sapphire crystal growth crucible |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720391081.1U CN206751971U (en) | 2017-04-14 | 2017-04-14 | A kind of sapphire crystal growth crucible |
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| Publication Number | Publication Date |
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| CN206751971U true CN206751971U (en) | 2017-12-15 |
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| CN201720391081.1U Active CN206751971U (en) | 2017-04-14 | 2017-04-14 | A kind of sapphire crystal growth crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 015100 the Inner Mongolia Autonomous Region Bayannaoer Economic Development Zone Hetao Street South, Fuyuan Road East (Bayi Township Harvest Village) Patentee after: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. Address before: 015100 room No. 112, No. 1, Fuyuan North Road, Bayannaoer economic and Technological Development Zone, Bayannaoer City, the Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. |
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| CP02 | Change in the address of a patent holder | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A crucible for sapphire crystal growth Effective date of registration: 20200929 Granted publication date: 20171215 Pledgee: Industrial and Commercial Bank of China Limited Bayannur Linhe sub branch Pledgor: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. Registration number: Y2020150000063 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |