CN206742258U - A kind of silicon-based detector - Google Patents
A kind of silicon-based detector Download PDFInfo
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- CN206742258U CN206742258U CN201720586871.5U CN201720586871U CN206742258U CN 206742258 U CN206742258 U CN 206742258U CN 201720586871 U CN201720586871 U CN 201720586871U CN 206742258 U CN206742258 U CN 206742258U
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- ohmic contact
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- based detector
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Abstract
The utility model discloses a kind of silicon-based detector, is related to photo-detector technical field;Including substrate, ohmic contact layer and absorbed layer；Absorbed layer is on ohmic contact layer and forms one-level convex table top, and ohmic contact layer is on substrate and forms two level convex table top；Absorbed layer is provided with ohmic contact；Ohm contact electrode is designed with ohmic contact and one-level convex table top；There is anti-reflection film on the mesa structure that substrate, ohmic contact layer and absorbed layer are formed；Substrate is provided with the pressure welding point being connected with Ohm contact electrode；Substrate back is provided with photo-emission part, and substrate back is provided with reflectance coating;The covering of explorer response scope is ultraviolet near infrared band, and in ultraviolet and near-infrared the two wave bands response enhancing, and detector performance is optimized.
Description
Technical field
Photo-detector technical field is the utility model is related to, more particularly to a kind of enhanced silicon-based detector of infrared and ultraviolet
And preparation method thereof.
Background technology
All objects launch the radiant light related to its temperature and characteristic, and the light of these different-wavebands contains object
Abundant information itself.In order to make full use of these information, be developed the photo-detector of various wave bands, especially infrared and
Ultraviolet band, its application are extremely extensive.Silicon is a kind of extremely ripe semi-conducting material, and its response spectrum can prolong from ultraviolet band
Near infrared band is reached, and processing technology cost is relatively low, is suitable for preparing ultraviolet and near infrared detector.Traditional silicon detection
Device, it is preferable in visible-range response by the performance of preparation technology, structure and material in itself is limited, and ultraviolet and near red
Wave section response is weaker.For this phenomenon, can be existed by improving panel detector structure and preparation technology to improve silicon-based detector
The ultraviolet and response of near infrared band, but this improvement is typically just for ultraviolet band or just for infrared band, very big
The performance of detector is constrained in degree, silicon-based detector is have impact on and is applied while ultraviolet and infrared band.
Utility model content
The technical problems to be solved in the utility model is to be directed to above-mentioned the deficiencies in the prior art, there is provided a kind of silicon substrate detection
Device, the covering of explorer response scope is ultraviolet near infrared band, and in ultraviolet and near-infrared the two wave bands response enhancing, detection
High sensitivity.
In order to solve the above technical problems, technical solution adopted in the utility model is：Including substrate, ohmic contact layer and
Absorbed layer；Absorbed layer is on ohmic contact layer and forms one-level convex table top, and ohmic contact layer is on substrate and to form two level convex
Shape table top；Absorbed layer is provided with ohmic contact；Ohm contact electrode is designed with ohmic contact and one-level convex table top；Lining
There is anti-reflection film on the mesa structure that bottom, ohmic contact layer and absorbed layer are formed；Substrate is provided with to be connected with Ohm contact electrode
Pressure welding point；Substrate back is provided with photo-emission part, and substrate back is provided with reflectance coating.
Preferably, substrate back is provided with reflectance coating.
Preferably, substrate is highly doped silicon ohmic contact layer for insulation or SI-substrate, ohmic contact layer, inhale
Receipts layer is undoped silicon Intrinsic Gettering layer.
Preferably, ohmic contact layer is N-type silicon ohmic contact layer, N-type silicon ohmic contact layer doping concentration is greater than 5 ×
1018cm-3, thickness is more than 2um.
Preferably, absorbed layer is undoped intrinsic silicon absorbed layer, undoped intrinsic silicon absorbed layer doping concentration is less than 2 ×
1014cm-3, thickness is more than 300um.
Preferably, ohmic contact, which is Annular ohmic, contacts ring, and it is heavily doped P-type Ohmic contact ring.
Preferably, anti-reflection film and reflectance coating are the two-layered medium that silicon nitride and silica are formed.
Preferably, Ohm contact electrode includes p-type Ohm contact electrode and N-type silicon Ohm contact electrode, connect in ohm
In contact portion for p-type Ohm contact electrode, on one-level convex table top is N-type silicon Ohm contact electrode.
It is using beneficial effect caused by above-mentioned technical proposal：The utility model upper surface p-type Ohmic contact is ring
Shape, it is light absorbs area in annular, avoids surface light absorbs " dead band " phenomenon of light absorbs area heavy doping formation, improve device
To the responsiveness of ultraviolet band；The silicon nitride of frontal design, the medium anti-reflection film of silicon dioxide thickness are 300nm- to wavelength
Transmissivity can be achieved up to more than 90% in 1100nm light, improves device to the ultraviolet response near infrared band；Do at the back side
Zigzag etching processing and deposit silicon nitride, the reflectance coating of silica, the good reflection near infrared band can be achieved, and
Reflection light is not orthogonal to device plane structure, increases light absorbs of the device near infrared band, improves device near red
The response of wave section；Using insulation or the mesa structure of SI-substrate, p-type and N-type Ohm contact electrode are guided into substrate
On, device capacitor can be reduced, improve the response speed of device.
The utility model improves silicon-based detector in ultraviolet and near infrared band responsiveness with a kind of simple structure,
And the influence to response device speed is reduced as far as possible, reduce cost.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model one embodiment；
Fig. 2 is the utility model cross section structure schematic diagram.
In figure：1st, substrate；2nd, ohmic contact layer；3rd, absorbed layer；4th, one-level convex table top；5th, two level convex table top；6th, Europe
Nurse contacts electrode；7th, pressure welding point；8th, photo-emission part；9th, heavily doped P-type Ohmic contact ring；10th, anti-reflection film；11st, p-type Ohmic contact
Electrode；12nd, N-type Ohm contact electrode；13rd, undoped silicon Intrinsic Gettering layer；14th, N-type silicon ohmic contact layer；15th, insulation or half
Dielectric substrate.
Embodiment
The utility model is described in further detail with reference to the accompanying drawings and detailed description.
Embodiment 1：
As shown in figure 1, be a kind of one embodiment of silicon-based detector of the utility model, including substrate 1, ohmic contact layer
2 and absorbed layer 3；Absorbed layer 3 is on ohmic contact layer 2 and forms one-level convex table top 4, and ohmic contact layer 2 is on substrate 1 and shape
Into two level convex table top 5；Absorbed layer 3 is provided with ohmic contact；Ohm is designed with ohmic contact and one-level convex table top 5
Contact electrode 6；There is anti-reflection film 10 on the mesa structure that substrate 1, ohmic contact layer 2 and absorbed layer 3 are formed；Substrate 1 is provided with
The pressure welding point 7 being connected with Ohm contact electrode 6；The back side of substrate 1 is provided with photo-emission part 8, and photo-emission part 8 can be zigzag,
Can be the dot of protrusion or be protrusion trapezoidal table top, it is optimal for zigzag；Substrate back is provided with reflectance coating, light reflection
Reflectance coating also is provided with portion 8.
Substrate 1, ohmic contact layer 2 and absorbed layer 3 form mesa structure, and Ohm contact electrode 6 is guided on substrate 1,
Device capacitor can be reduced, improve the response speed of device；Substrate 1 is provided with the pressure welding point 7 communicated with Ohm contact electrode 6,
Front is planar structure, and is provided with anti-reflection film 10, the more preferable throw light of surface energy, overleaf provided with photo-emission part 8, and overleaf
Provided with reflectance coating, double to absorb near-infrared ripple and near-infrared ripple reflected so that the present apparatus ultraviolet and near-infrared this two
The response enhancing of individual wave band, the present apparatus can respond near-infrared to the wave band between ultraviolet, but in near-infrared and the two ultraviolet ripples
Section response can strengthen, and detectivity is high.
Preferably, substrate 1 is insulation or SI-substrate, fast response time.
Preferably, ohmic contact layer 2 is highly doped silicon ohmic contact layer 14, N-type silicon ohmic contact layer 14 (i-Si)
Doping concentration is greater than 5 × 1018cm-3, concentration is advantageous to reduce resistance greatly, and thickness is more than 2um, and thickness, which is advantageous to reduce greatly, goes here and there
Join resistance.
Preferably, absorbed layer 3 is undoped silicon Intrinsic Gettering layer (N-Si) 13, undoped intrinsic silicon absorbed layer 13 adulterates
Concentration is less than 2 × 1014cm-3, the small good absorbing to ripple of concentration, thickness is more than 300um, and thickness is advantageous to reduce series resistance greatly.
Preferably, ohmic contact, which is Annular ohmic, contacts ring, and it is heavily doped P-type ohmic contact 9.Loop configuration
Without tip, cuspidated structure can compare concentration by electric field at tip, in order to improve reliability design into not having cuspidated ring
Shape, ohmic contact are annular, are light absorbs area in annular, and it is " dead to avoid the surface light absorbs that the heavy doping of light absorbs area is formed
Area " phenomenon, device is improved integrally to the responsiveness of ultraviolet band.
Preferably, ohmic contact layer 2 is N-type silicon ohmic contact layer 14, the doping concentration of N-type silicon ohmic contact layer 14 is big
In 5 × 1018cm-3, concentration is advantageous to reduce resistance greatly, and thickness is more than 2um, and thickness is advantageous to greatly reduction series resistance.
Preferably, absorbed layer is undoped intrinsic silicon absorbed layer 13, the undoped doping concentration of intrinsic silicon absorbed layer 13 is small
In 2 × 1014cm-3, the small good absorbing to ripple of concentration, thickness is more than 300um, and thickness is advantageous to reduce series resistance greatly.
Preferably, anti-reflection film 10 and reflectance coating are the two-layered medium that silicon nitride and silica are formed, silicon nitride and two
The level of silica two layer medium up and down without certain limitation, can with silicon nitride on top can also silica on top,
The order of silicon nitride and silica can be set as needed, and set thickness；The silicon nitride thickness of anti-reflection film 10 is 50nm, two
Silicon oxide thickness is 85nm, and under this thickness, silicon nitride is located at the lower section of silica, silicon nitride thickness 50nm, silica
Transmissivity can be achieved up to more than 90% to the light that wavelength is 300nm ~ 1100nm in thickness 85nm medium anti-reflection film, improves
Device is to the ultraviolet response near infrared band；Reflectance coating silicon nitride thickness is 60nm, silicon dioxide thickness 90nm, thick herein
Under degree, silicon nitride is located at the lower section of silica, and reflectance coating adds jagged photo-emission part 8, can be achieved near infrared band
Good reflection, the reflectivity of light is reached more than 90%, and reflection light is not orthogonal to device plane structure, increases device
To the light absorbs of near infrared band, response of the device near infrared band is improved.
Preferably, Ohm contact electrode 6 includes p-type Ohm contact electrode 11 and N-type silicon Ohm contact electrode 12, in Europe
On nurse contact site for p-type Ohm contact electrode 11, on one-level convex table top 4 is N-type silicon Ohm contact electrode 12.
The utility model is suitable for the making of ultraviolet infrared enhanced type silicon detector cells or focal plane device, can meet
The demand of multiband Photodetection system development, there is important application in the imaging of target, alarm and monitoring and optical communication field
Prospect.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
All any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (8)
- A kind of 1. silicon-based detector, it is characterised in that：Including substrate（1）, ohmic contact layer（2）And absorbed layer（3）；The absorption Layer（3）In ohmic contact layer（2）Go up and form one-level convex table top（4）, ohmic contact layer（2）In substrate（1）Go up and form two Level convex table top（5）；The absorbed layer（3）It is provided with ohmic contact；The ohmic contact and one-level convex table top（4）On It is designed with Ohm contact electrode（6）；The substrate（1）, ohmic contact layer（2）And absorbed layer（3）On the mesa structure formed There is anti-reflection film（10）；The substrate（1）It is provided with and Ohm contact electrode（6）Connected pressure welding point（7）；The substrate（1）The back of the body Face is provided with photo-emission part（8）.
- A kind of 2. silicon-based detector according to claim 1, it is characterised in that the substrate（1）The back side is provided with reflectance coating.
- A kind of 3. silicon-based detector according to claim 1, it is characterised in that the substrate（1）For insulation or semi-insulating lining Bottom, ohmic contact layer（2）For highly doped silicon ohmic contact layer, absorbed layer（3）For undoped silicon Intrinsic Gettering layer.
- 4. a kind of silicon-based detector according to claim 3, it is characterised in that the N-type silicon ohmic contact layer doping is dense Degree is greater than 5 × 1018cm-3, thickness is more than 2um.
- A kind of 5. silicon-based detector according to claim 3, it is characterised in that the undoped intrinsic silicon absorbed layer doping Concentration is less than 2 × 1014cm-3, thickness is more than 300um.
- 6. a kind of silicon-based detector according to claim 1, it is characterised in that the ohmic contact connects for Annular ohmic Ring is touched, and is heavily doped P-type Ohmic contact ring（9）.
- A kind of 7. silicon-based detector according to claim 1, it is characterised in that the anti-reflection film（10）It is nitrogen with reflectance coating The two-layered medium that SiClx and silica are formed.
- A kind of 8. silicon-based detector according to claim 1, it is characterised in that the Ohm contact electrode（6）Including p-type Ohm contact electrode（11）With N-type silicon Ohm contact electrode（12）, on ohmic contact for p-type Ohm contact electrode （11）, in one-level convex table top（4）On be N-type silicon Ohm contact electrode（12）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720586871.5U CN206742258U (en) | 2017-05-24 | 2017-05-24 | A kind of silicon-based detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720586871.5U CN206742258U (en) | 2017-05-24 | 2017-05-24 | A kind of silicon-based detector |
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| CN206742258U true CN206742258U (en) | 2017-12-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544731A (en) * | 2019-09-05 | 2019-12-06 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector and preparation method thereof |
| CN110676327A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector integrated with antireflection film layer and preparation method thereof |
-
2017
- 2017-05-24 CN CN201720586871.5U patent/CN206742258U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544731A (en) * | 2019-09-05 | 2019-12-06 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector and preparation method thereof |
| CN110676327A (en) * | 2019-09-05 | 2020-01-10 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector integrated with antireflection film layer and preparation method thereof |
| WO2021042626A1 (en) * | 2019-09-05 | 2021-03-11 | 中国电子科技集团公司第十三研究所 | Ultraviolet detector and preparation method therefor |
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