CN206727918U - A kind of full N pipe single-phase motor-driving devices - Google Patents
A kind of full N pipe single-phase motor-driving devices Download PDFInfo
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- CN206727918U CN206727918U CN201720488127.1U CN201720488127U CN206727918U CN 206727918 U CN206727918 U CN 206727918U CN 201720488127 U CN201720488127 U CN 201720488127U CN 206727918 U CN206727918 U CN 206727918U
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Abstract
A kind of full N pipe single-phase motor-driving devices, include drive circuit, power circuit, control circuit, booster circuit, the output end of the power circuit is connected with drive circuit, control circuit, booster circuit input respectively, the drive circuit includes metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4, triode T8, triode T9, and the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 are NMOS tube.Metal-oxide-semiconductor in drive circuit of the present utility model belongs to NMOS tube, low manufacture cost, selectivity is extensively, substitute can be quickly found out in a short time when material short supply, and it is big by the electric current of NMOS tube, it is safe, therefore not only efficiency high cost is low for the utility model, powerful motor can be driven, and circuit structure is simple, while compare the space for saving pcb board.
Description
Technical field
A kind of technical field of driving is the utility model is related to, especially a kind of full N pipe single-phase motor-driving devices.
Background technology
Single-phase full bridge motor on the market generally uses LB11867RV chip ICs or LB11867FV chip ICs at present, passes through
It is used in combination using P channels metal-oxide-semiconductor and N channels metal-oxide-semiconductor, motor running is controlled using single-power voltage can.
To adapt to the use demand of DC micro-motor, each semiconductor manufacturer is proposed the special integrated electricity of DC MOTOR CONTROL
Road, the single-phase full bridge motor-driven system based on MCU controls is formed, single-phase full bridge motor driving on the market at present is substantially
Using the metal-oxide-semiconductor structure of N under upper P.Its advantage is using integrated, and peripheral cell is few, and drive circuit is simple, and cost is relatively
Low, control is simple, is adapted to the driving structure for doing low-voltage low current.
But because using the metal-oxide-semiconductor structure of N under upper P, PMOS internal resistance is big, and power output is limited, be not suitable for high-power electricity
The demand of machine driving, and the N pipes of equivalent parameters differ nearly 3 times with P pipe MOS prices, and while P pipes TO-252 encapsulation is following
Rarely accomplished that more than 600V, P managed 1/3rd of only about N pipes market, if being difficult to find conjunction in the case of running out of goods
Suitable substitute.
The content of the invention
To solve the above problems, the utility model provides a kind of full N pipe single-phase motor-driving devices, low manufacture cost, MOS
Pipe is all N-type pipe, and big by electric current, safe, effectively improves service efficiency.
To achieve the above object, the technical solution adopted in the utility model is：A kind of full N pipe single-phase motor-driving devices,
Include drive circuit, power circuit, control circuit, booster circuit, the output end of the power circuit respectively with drive circuit,
Control circuit, the connection of booster circuit input, the drive circuit include metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor
N4, triode T8, triode T9, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 grid pass through resistance R19, resistance R20 and boosting electricity respectively
Road output end VH connections, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 drain electrode and power circuit output end DV connections, the metal-oxide-semiconductor N1,
Drain electrode of the metal-oxide-semiconductor N2 source electrode respectively with metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 is connected, the drain electrode of the metal-oxide-semiconductor N3 and metal-oxide-semiconductor N4 drain electrode
Between be connected with motor coil winding L, the source electrode of the metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 source electrode are grounded by resistance R36, control electricity
Road is also grounded by resistance R38, R36, and for current sample, the grid of the metal-oxide-semiconductor N3 passes through resistance R29 and control circuit
Input AL connections, the grid of the metal-oxide-semiconductor N4 pass through the input BL connections of resistance R30 and control circuit, the triode
T8 base stage is connected by the output end of resistance R25 and control circuit, and colelctor electrode is connected by resistance R21 and metal-oxide-semiconductor N1 grid
Connect, grounded emitter, the base stage of the triode T9 is connected by the output end of resistance R26 and control circuit, and colelctor electrode passes through
Resistance R22 is connected with metal-oxide-semiconductor N1 grid, grounded emitter, and the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 are
NMOS tube.
Specifically, the booster circuit includes diode D6, diode D7, electric capacity C7, the pole of electric capacity C9, MMBT5401 tri-
Pipe T1, the diode D6 positive poles are connected with power supply VCC, and negative pole is connected with diode D7 positive poles, and the diode cathode passes through
Electric capacity C9 is grounded, the diode cathode output signal VH, and the diode D6 negative poles also pass through electric capacity C7's and triode T1
Colelctor electrode is connected, and the output end of emitter stage and power circuit is connected, and base stage is connected by resistance R8 with emitter stage, and base stage also passes through
The amplification electric current of R9 connection 100KHz frequencies.
Specifically, described power circuit includes diode D1, diode D5,78L05 chip U1, electric capacity C5, electric capacity
CX, the diode D1, diode D5 positive poles are connected with 12V inputs respectively, the diode D1 negative poles and metal-oxide-semiconductor N1, MOS
Pipe N2 drain electrode connection, the negative pole of the diode D5 is connected with chip U1 input, chip U1 output end respectively with liter
The input connection of volt circuit, control circuit.
Specifically, described control circuit includes US1881 chips, MCU chip, the input of the US1881 chips
It is connected with the output end of power circuit, the output end of the US1881 chips and the input of MCU chip connect.
The beneficial effects of the utility model are：
Metal-oxide-semiconductor in drive circuit of the present utility model belongs to NMOS tube, low manufacture cost, and selectivity extensively, works as device
Substitute can be quickly found out in a short time when part short supply or other problemses, and it is big by the electric current of NMOS tube, it is safe,
Therefore not only efficiency high cost is low for the utility model, can drive powerful motor, and circuit structure is simple, while compares section
Save the space of pcb board.
Brief description of the drawings
Fig. 1 is the circuit diagram of utility model.
Drawing reference numeral explanation：1：Power circuit；2：Booster circuit；3：Control circuit；4：Drive circuit.
Embodiment
Refer to shown in Fig. 1, the utility model on：A kind of full N pipe single-phase motor-driving devices, include drive circuit
4th, power circuit 1, control circuit 3, booster circuit 2, the output end of the power circuit 1 respectively with drive circuit 4, control circuit
3rd, the input of booster circuit 2 connects, and the drive circuit 4 includes metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4, three poles
Pipe T8, triode T9, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 grid are exported by resistance R19, resistance R20 and booster circuit 2 respectively
VH connections are held, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 drain electrode are connected with the output end DV of power circuit 1, the metal-oxide-semiconductor N1, metal-oxide-semiconductor
Drain electrode of the N2 source electrode respectively with metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 is connected, between the drain electrode of the metal-oxide-semiconductor N3 and metal-oxide-semiconductor N4 drain electrode
Wired motor hoop winding L is also connected with, the source electrode of the metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 source electrode are grounded by resistance R36, control circuit
Also it is grounded by resistance R38, R36, for current sample, the grid of the metal-oxide-semiconductor N3 passes through resistance R29 and control circuit 3
Input AL connections, the grid of the metal-oxide-semiconductor N4 are connected by resistance R30 with the input BL of control circuit 3, the triode
T8 base stage is connected by resistance R25 with the output end of control circuit 3, and colelctor electrode is connected by resistance R21 and metal-oxide-semiconductor N1 grid
Connect, grounded emitter, the base stage of the triode T9 is connected by resistance R26 with the output end of control circuit 3, and colelctor electrode passes through
Resistance R22 is connected with metal-oxide-semiconductor N1 grid, grounded emitter, and the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 are
NMOS tube.
Compared with prior art, the metal-oxide-semiconductor in drive circuit 4 of the present utility model belongs to NMOS tube, low manufacture cost,
Selectivity extensively, can be quickly found out substitute in a short time, and pass through NMOS tube when device short supply or other problemses
Electric current is big, safe, therefore not only efficiency high cost is low for the utility model, can drive powerful motor, and circuit knot
Structure is simple, while compares the space for saving pcb board.
Specifically, the booster circuit 2 includes diode D6, diode D7, electric capacity C7, electric capacity C9, MMBT5401 tri-
Pole pipe T1, the diode D6 positive poles are connected with power supply VCC, and negative pole is connected with diode D7 positive poles, and the diode cathode leads to
Electric capacity C9 ground connection is crossed, the diode cathode output signal VH, the diode D6 negative poles also pass through electric capacity C7 and triode T1
Colelctor electrode connection, emitter stage is connected with the output end of power circuit 1, and base stage is connected by resistance R8 with emitter stage, and base stage is also
Pass through the amplification electric current of R9 connection 100KHz frequencies.
Specifically, the power circuit 1 includes diode D1, diode D5,78L05 chip U1, electric capacity C5, electric capacity
CX, the diode D1, diode D5 positive poles are connected with 12V inputs respectively, the diode D1 negative poles and metal-oxide-semiconductor N1, MOS
Pipe N2 drain electrode connection, the negative pole of the diode D5 is connected with chip U1 input, chip U1 output end respectively with liter
The input connection of volt circuit 2, control circuit 3.
Specifically, the control circuit 3 includes US1881 chips, MCU chip, the input of the US1881 chips with
The output end connection of power circuit 1, the output end of the US1881 chips and the input of MCU chip connect.
The utility model is further described below by specific embodiment.
In this specific embodiment, power circuit 1 is connected by output end DV with drive circuit 4, for drive circuit
4MOS pipes are powered, and power circuit 1 is connected by 5V ends with booster circuit 2；Booster circuit 2 is connected with control circuit 3, control circuit
3 MCU chip main function is logical using the drive signal and the duty cycle signals of booster power for producing metal-oxide-semiconductor, booster circuit 2
Cross to act synergistically with MCU chip and produce the about 100Khz duty cycle signals of 5V voltages 50%；
In this specific embodiment, when supply voltage is 12V, supply voltage obtains by diode D5 and chip U1
To a 5V voltages, for being powered to MCU chip.The power circuit 1 is additionally provided with filter capacitor CX, on absorbing coil
Crest voltage, in case damage driving metal-oxide-semiconductor, the DV ends are grounded by filter capacitor CX, wherein, the core in this specific embodiment
Piece U1 model 78L05, the diode D5 models 4148；
In this specific embodiment, the diode D6 positive poles of the booster circuit 2 are connected with VCC ends, the diode D6
Negative pole triode T1 colelctor electrode is connect by electric capacity C7, the emitter stage of the triode T1 is connected with power supply 5V ends, the 5V
End connects triode T1 base stage by resistance R8, and the base stage of the triode T1 connects 100K ends by resistance R9, and the purpose is to will
Using the duty cycle signals that MCU is produced by T1 triodes amplification electric current, the positive pole of the diode D7 is with diode D6's
Negative pole is connected, and the negative pole of the diode D7 is grounded by electric capacity C9, and the VH ends are connected with diode D7 negative pole, and D6 is anti-
The voltage only to boost pours in down a chimney to VCC, leads to characteristic of the high frequency resistance low frequency with storing electricity using electric capacity, makes D6, D7 junctions are folded
Making alive reaches about 16.2V (12-D5 ~ 0.3V-D6 ~ 0.3V+4.8), and obtains an about 15.9V with C9 rectifying and wave-filterings by D7
DC voltage VH, VH15.9-DV11.3=4.6V.Wherein, the model of the triode T1 in this specific embodiment
MMBT5401, diode D6, diode D7 models 4148, electric capacity C7 models 106, electric capacity C9 models 474, resistance R8 electricity
Resistance is 10K, and resistance R9 resistance values are 2.2K；
In this specific embodiment, the VH terminal voltages in the drive circuit 4 are about 15.9V, and the voltage at DV ends is about
11.3V, VH15.9-DV11.3=4.6V, institute's above bridge mos gate pole have been obtained than voltage of the drain electrode of metal-oxide-semiconductor higher than more than 3.5,
The metal-oxide-semiconductor of bridge arm can just be controlled by now providing signal, and the grid of the metal-oxide-semiconductor N1 passes through triode T8 and the AH of MCU chip
End connection, the grid of the metal-oxide-semiconductor N2 is connected by the BH ends of triode T9 and MCU chip, because the I/O port pin of MCU chip
Maximum pressure-resistant only 5V, so AH will pass through triode T8 and make voltage amplification, VH voltage is about 15.9, when AH is low level
When triode T8 be in cut-off state, the voltage that colelctor electrode C and metal-oxide-semiconductor N1 grid G voltage is about 15.9, DV is about
11.2V now metal-oxide-semiconductor N1 VGS voltages are about 4.7V, so metal-oxide-semiconductor N1 is in the conduction state；When AH is high level,
Triode T8 colelctor electrode C in the conduction state and metal-oxide-semiconductor N1 grid voltage is about 0.2V or so, and now metal-oxide-semiconductor N1, which is in, cuts
Only state, so as to realize the driving to metal-oxide-semiconductor N1.The grid of the metal-oxide-semiconductor N3 and the AL ends of MCU chip connect, metal-oxide-semiconductor N4's
The BL ends of grid and MCU chip are connected, and the pwm signal that AL and BL drives as motor, lower bridge arm N3 and metal-oxide-semiconductor N4 is drawn by MCU
Pin directly drives, because MCU I/O ports pin output voltage is 0V and 5V, output 5V has met metal-oxide-semiconductor maximum 3.5V's
Driving voltage.Wherein, the N-type metal-oxide-semiconductor N1 in this specific embodiment, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4 model
IRFR8314, the triode T8, triode T9 model MMBT5551.
Embodiment of above is only that preferred embodiment of the present utility model is described, not to the utility model
Scope be defined, on the premise of the utility model design spirit is not departed from, this area ordinary skill technical staff is to reality
The various modifications made with new technical scheme and improvement, the protection that claims of the present utility model determine all should be fallen into
In the range of.
Claims (4)
1. a kind of full N pipe single-phase motor-driving devices, include drive circuit, power circuit, control circuit, booster circuit, institute
The output end for stating power circuit is connected with drive circuit, control circuit, booster circuit input respectively, it is characterised in that described
Drive circuit include metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor N4, triode T8, triode T9, the metal-oxide-semiconductor N1,
Metal-oxide-semiconductor N2 grid is connected by resistance R19, resistance R20 with booster circuit output end VH respectively, the metal-oxide-semiconductor N1, metal-oxide-semiconductor
N2 drain electrode and the output end DV connections of power circuit, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 source electrode respectively with metal-oxide-semiconductor N3, metal-oxide-semiconductor
N4 drain electrode connection, is also associated with motor coil winding L between the drain electrode of the metal-oxide-semiconductor N3 and metal-oxide-semiconductor N4 drain electrode, described
Metal-oxide-semiconductor N3 source electrode, metal-oxide-semiconductor N4 source electrode are grounded by resistance R36, and the grid of the metal-oxide-semiconductor N3 passes through resistance R29 and control
The input AL connections of circuit, the grid of the metal-oxide-semiconductor N4 are described by the input BL connections of resistance R30 and control circuit
Triode T8 base stage is connected by the output end of resistance R25 and control circuit, and colelctor electrode passes through resistance R21's and metal-oxide-semiconductor N1
Grid is connected, grounded emitter, and the base stage of the triode T9 is connected by the output end of resistance R26 and control circuit, current collection
Pole is connected by resistance R22 with metal-oxide-semiconductor N1 grid, grounded emitter, the metal-oxide-semiconductor N1, metal-oxide-semiconductor N2, metal-oxide-semiconductor N3, metal-oxide-semiconductor
N4 is NMOS tube.
A kind of 2. full N pipe single-phase motor-driving devices according to claim 1, it is characterised in that the booster circuit bag
Contain diode D6, diode D7, electric capacity C7, electric capacity C9, MMBT5401 triode T1, the diode D6 positive poles and power supply
VCC connections, negative pole are connected with diode D7 positive poles, and the diode cathode is grounded by electric capacity C9, and the diode cathode is defeated
Go out signal VH, the diode D6 negative poles are also connected by electric capacity C7 with triode T1 colelctor electrode, the hair of the triode T1
The output end of emitter-base bandgap grading and power circuit is connected, and base stage is connected by resistance R8 with emitter stage, and base stage also connects 100KHz by R9
The amplification electric current of frequency.
A kind of 3. full N pipe single-phase motor-driving devices according to claim 1, it is characterised in that the power circuit bag
Contain diode D1, diode D5,78L05 chip U1, electric capacity C5, electric capacity CX, the diode D1, diode D5 positive poles difference
It is connected with 12V inputs, the diode D1 negative poles are connected with metal-oxide-semiconductor N1, metal-oxide-semiconductor N2 drain electrode, and the diode D5's is negative
Pole is connected with chip U1 input, and the input of chip U1 output end respectively with booster circuit, control circuit is connected.
A kind of 4. full N pipe single-phase motor-driving devices according to claim 1, it is characterised in that the control circuit bag
Containing US1881 chips, MCU chip, the input of the US1881 chips and the output end of power circuit connect, described
The output end of US1881 chips and the input of MCU chip connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488127.1U CN206727918U (en) | 2017-05-04 | 2017-05-04 | A kind of full N pipe single-phase motor-driving devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488127.1U CN206727918U (en) | 2017-05-04 | 2017-05-04 | A kind of full N pipe single-phase motor-driving devices |
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| Publication Number | Publication Date |
|---|---|
| CN206727918U true CN206727918U (en) | 2017-12-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720488127.1U Active CN206727918U (en) | 2017-05-04 | 2017-05-04 | A kind of full N pipe single-phase motor-driving devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206727918U (en) |
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2017
- 2017-05-04 CN CN201720488127.1U patent/CN206727918U/en active Active
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