CN206727882U - A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification - Google Patents
A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification Download PDFInfo
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- CN206727882U CN206727882U CN201720043756.3U CN201720043756U CN206727882U CN 206727882 U CN206727882 U CN 206727882U CN 201720043756 U CN201720043756 U CN 201720043756U CN 206727882 U CN206727882 U CN 206727882U
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model discloses a kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its include AC input cell, PFC boost unit, inversion reversed phase unit and：Metal-oxide-semiconductor full-bridge rectification unit, include the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the first electric capacity, output head anode after the interconnection of the source electrode of the source electrode of first metal-oxide-semiconductor and the second metal-oxide-semiconductor as metal-oxide-semiconductor full-bridge rectification unit, negative pole of output end after the drain electrode of 3rd metal-oxide-semiconductor and the drain electrode interconnection of the 4th metal-oxide-semiconductor as metal-oxide-semiconductor full-bridge rectification unit, first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, and second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor simultaneously turn on.The utility model can improve conversion efficiency, realize fan-free cooling requirements, and reduce noise.
Description
Technical field
It the utility model is related to voltage conversion circuit, more particularly to a kind of intelligent amendment based on metal-oxide-semiconductor full-bridge rectification
Wave voltage change-over circuit.
Background technology
In the prior art, AC turn AC intelligent boost-buck conversion equipments be otherwise known as travelling socket, voltage conversion circuit be should
Use AC turn AC intelligent boost-buck conversion equipments be otherwise known as travelling socket Key Circuit, can AC/AC conversion in realize
It is depressured the simultaneously function of burning voltage and frequency.For AC/AC just in meaningful formula equipment, rectification part uses diode or rectification mostly at present
Bridge makees rectifier cell, and when AC voltages reach 90V, commutation diode or the heating of bridge heap are serious, therefore, are set in portable AC-AC
Need to increase fan cooling in standby, but this mode will bring noise problem, while the PF values inputted are low, and the cost of product
It is higher, volume is larger.
Utility model content
The technical problems to be solved in the utility model is, in view of the shortcomings of the prior art, there is provided one kind can improve voltage
The PF values of conversion equipment, reduce noise, reduce product cost, easily realize output short circuit protection based on metal-oxide-semiconductor full-bridge rectification
Intelligent amendment wave voltage change-over circuit.
In order to solve the above technical problems, the utility model adopts the following technical scheme that.
A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it includes：One exchange input is single
Member, for incoming transport electricity；One metal-oxide-semiconductor full-bridge rectification unit, include the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor,
Four metal-oxide-semiconductors and the first electric capacity, the drain electrode of first metal-oxide-semiconductor and the source electrode of the 3rd metal-oxide-semiconductor are all connected to AC input cell
First output end, the drain electrode of second metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor are all connected to the second output of AC input cell
End, the output after the source electrode interconnection of the source electrode and the second metal-oxide-semiconductor of first metal-oxide-semiconductor as metal-oxide-semiconductor full-bridge rectification unit
Rectify pole, as metal-oxide-semiconductor full-bridge rectification unit after the drain electrode of the 3rd metal-oxide-semiconductor and the drain electrode interconnection of the 4th metal-oxide-semiconductor
Negative pole of output end, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the 3rd metal-oxide-semiconductor and the grid of the 4th metal-oxide-semiconductor
Pole is respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, second metal-oxide-semiconductor
Simultaneously turned on the 3rd metal-oxide-semiconductor, first electric capacity is parallel to the output end of metal-oxide-semiconductor full-bridge rectification unit；One PFC boost list
Member, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit, and the PFC boost unit is used for the defeated of metal-oxide-semiconductor full-bridge rectification unit
Go out voltage and carry out boost conversion；One inversion reversed phase unit, it is connected to the output end of PFC boost unit, the inversion reversed phase unit
For being alternating current by the output voltage inversion of PFC boost unit.
Preferably, the PFC boost unit includes boost inductance, first switch pipe, the first commutation diode and electrolysis
Electric capacity, the front end of the boost inductance are connected to the output end of input block, and the rear end of the boost inductance is connected to first and opened
The drain electrode of pipe, the source ground of the first switch pipe are closed, the grid of the first switch pipe is used to access PWM controls letter all the way
Number, the anode of drain electrode the first commutation diode of connection of the first switch pipe, the negative electrode conduct of first commutation diode
The output end of PFC boost unit, and the positive pole of the negative electrode connection electrochemical capacitor of first commutation diode, the negative pole of electrochemical capacitor
Ground connection.
Preferably, it is connected with pull down resistor between the grid and source electrode of the first switch pipe.
Preferably, a control unit, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the 3rd MOS are also included
The grid of the grid of pipe, the grid of the 4th metal-oxide-semiconductor and first switch pipe is electrically connected in control unit, by the control
Unit and the on off operating mode for controlling the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and first switch pipe.
Preferably, the first output end of the AC input cell and the second output end are connected by current-limiting resistance respectively
In control unit, to make control unit obtain the phase of alternating current voltage.
Preferably, the AC input cell includes socket, the first insurance, lightning protection resistance, common mode inhibition inductance and peace
Electric capacity is advised, first insurance is serially connected with the zero line or live wire of socket, and the front end of the common mode inhibition inductance is parallel to socket,
The lightning protection resistance is parallel to the front end of common mode inhibition inductance, and the safety electric capacity is parallel to the rear end of common mode inhibition inductance, and
Output end of the rear end of the common mode inhibition inductance as AC input cell.
Preferably, a D/C voltage sampling unit is also included, the D/C voltage sampling unit includes be sequentially connected in series
Two sampling resistors and the 3rd sampling resistor, the front end of second sampling resistor is connected to the output end of PFC boost unit, described
The rear end of 3rd sampling resistor is connected to control unit, makes control single by second sampling resistor and the 3rd sampling resistor
The electric signal of member collection PFC boost unit output.
Preferably, the inversion reversed phase unit includes being opened by second switch pipe, the 3rd switching tube, the 4th switching tube and the 5th
Close the inverter bridge of pipe composition, the grid of the second switch pipe, grid, the grid and the 5th of the 4th switching tube of the 3rd switching tube
The grid of switching tube is connected to control unit, and the 4th switching tube, the 5th switching tube, are controlled by described control unit
Six switching tubes and the 7th switching tube on or off, to make the inversion reversed phase unit output AC voltage.
Preferably, the output end of the inversion reversed phase unit is in series with the second insurance.
Preferably, described control unit includes single-chip microcomputer and its peripheral circuit.
In intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed in the utility model, it will exchange
Input block connects alternating-current power supply so that metal-oxide-semiconductor full-bridge rectification unit is transported in AC-AC fax, in metal-oxide-semiconductor full-bridge rectification
In unit, when L is sinusoidal half cycle, the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is made to turn on, electric current is by fiery L lines, the second metal-oxide-semiconductor, first
Electric capacity, the 3rd metal-oxide-semiconductor form loop, and when N lines be sinusoidal half cycle, the first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor turn on, electric current by N lines,
First metal-oxide-semiconductor, the first electric capacity, the 4th metal-oxide-semiconductor form loop；Pass through said process so that DC voltage is formed on the first electric capacity,
First electric capacity be in order to filter out the ripple after rectification, and then obtain smooth direct current and transmit to PFC boost unit carry out
Boost conversion, finally using inversion reversed phase unit by the output voltage inversion of PFC boost unit be alternating current for use.It is above-mentioned
In voltage conversion circuit, because the conducting internal resistance of metal-oxide-semiconductor is seldom, so consumption power of the electric current on metal-oxide-semiconductor is with regard to very little, therefore
Efficiency after rectification can be very high, and can effectively improve the PF values of voltage conversion device, while without fan cooling, and then reduce and make an uproar
Sound, product cost is reduced, and reduce small product size.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of amendment wave voltage change-over circuit.
Fig. 2 is the circuit block diagram of control unit.
Embodiment
The utility model is described in more detail with reference to the accompanying drawings and examples.
The utility model discloses a kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, with reference to
Shown in Fig. 1 and Fig. 2, it includes：
One AC input cell 10, for incoming transport electricity；
One metal-oxide-semiconductor full-bridge rectification unit 20, include the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th
Metal-oxide-semiconductor Q4 and the first electric capacity C1, the first metal-oxide-semiconductor Q1 drain electrode are all connected to exchange input with the 3rd metal-oxide-semiconductor Q3 source electrode
First output end of unit 10, the drain electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 source electrode are all connected to exchange input list
Second output end of member 10, the source electrode of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 source electrode are used as metal-oxide-semiconductor after being connected with each other
After the output head anode of full-bridge rectification unit 20, the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 drain electrode are connected with each other
As the negative pole of output end of metal-oxide-semiconductor full-bridge rectification unit 20, the grid of the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 grid,
3rd metal-oxide-semiconductor Q3 grid and the 4th metal-oxide-semiconductor Q4 grid are respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor
Q1 and the 4th metal-oxide-semiconductor Q4 are simultaneously turned on, and the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 are simultaneously turned on, and the first electric capacity C1 is simultaneously
It is coupled to the output end of metal-oxide-semiconductor full-bridge rectification unit 20；
One PFC boost unit 30, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit 20, and the PFC boost unit 30 is used
Boost conversion is carried out in the output voltage to metal-oxide-semiconductor full-bridge rectification unit 20；
One inversion reversed phase unit 50, the output end of PFC boost unit 30 is connected to, the inversion reversed phase unit 50 is used for will
The output voltage inversion of PFC boost unit 30 is alternating current.
In above-mentioned intelligent amendment wave voltage change-over circuit, AC input cell 10 is connected into alternating-current power supply so that hand over
Alternating current transmission is flowed to metal-oxide-semiconductor full-bridge rectification unit 20, in metal-oxide-semiconductor full-bridge rectification unit 20, when L is sinusoidal half cycle, is made
Second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 conductings, electric current is by fiery L lines, the second metal-oxide-semiconductor Q2, the first electric capacity C1, the 3rd metal-oxide-semiconductor Q3 shapes
Into loop, when N lines are sinusoidal half cycle, the first metal-oxide-semiconductor Q1 and the 4th metal-oxide-semiconductor Q4 conductings, electric current by N lines, the first metal-oxide-semiconductor Q1,
First electric capacity C1, the 4th metal-oxide-semiconductor Q4 form loop；Pass through said process so that form DC voltage on the first electric capacity C1, this
One electric capacity C1 is to filter out the ripple after rectification, and then obtains smooth direct current and transmit to PFC boost unit 30 to carry out
Boost conversion, finally using inversion reversed phase unit 50 by the output voltage inversion of PFC boost unit 30 be alternating current for use.
In above-mentioned voltage conversion circuit, metal-oxide-semiconductor is employed as rectifying device, because the conducting internal resistance of metal-oxide-semiconductor is seldom, so electric current exists
Consumption power on metal-oxide-semiconductor is with regard to very little, therefore the efficiency after rectification can be very high, and can effectively improve the PF of voltage conversion device
Value, while without fan cooling, and then reduce noise, reduce product cost, and reduce small product size.
In practical application, when the output end of metal-oxide-semiconductor full-bridge rectification unit 20 connects circuit abnormal, can directly it close
The first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 pwm signal are closed, input electricity is closed so as to reach
The purpose of pressure, preferably to protect subsequent cell circuit.
To cause the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 to respond rapidly to, this practicality
It is new to employ four resistance (R1, R2, R3, R4), respectively as the pull down resistor of four rectification metal-oxide-semiconductors to prevent from misleading.
On part of boosting, the PFC boost unit 30 includes boost inductance L2, first switch pipe Q5, the first rectification
Diode D1 and electrochemical capacitor C2, the boost inductance L2 front end are connected to the output end of input block 10, the boosting electricity
Sense L2 rear end is connected to first switch pipe Q5 drain electrode, the source ground of the first switch pipe Q5, the first switch pipe
Q5 grid is used to access pwm control signal all the way, the first commutation diode D1's of drain electrode connection of the first switch pipe Q5
Anode, the output end of the negative electrode of the first commutation diode D1 as PFC boost unit 30, and first commutation diode D1
Negative electrode connection electrochemical capacitor C2 positive pole, electrochemical capacitor C2 negative pole ground connection.
Further, it is connected with pull down resistor R5 between the grid and source electrode of the first switch pipe Q5.Utilize drop-down electricity
First switch pipe Q5 quick response can be achieved in resistance.
In above-mentioned PFC boost unit 30, if input line voltage is less than 230V, control unit output high-frequency controling signal
GATEs of the PWM5 to first switch pipe Q5, the half-wave alternating voltage after the full-bridge rectification of four metal-oxide-semiconductors compositions is by first switch pipe
Q5 is boosted in a manner of PFC boost, and specific boosting principle is：When first switch pipe Q5 is turned on, the electricity on the first electric capacity C1
Flow through boost inductance L2, first switch pipe Q5 to GND and form loop, boost inductance L2 storage energy；When first switch pipe Q5 is closed
When disconnected, the induced electromotive force more much higher than input voltage can be formed on boost inductance, induced electromotive force is through the rectification of continued flow tube first
Unidirectional pulsating volage, which is formed, after diode D1 progress rectifications gives high-frequency filter circuit filtering again.And first switch pipe Q5 is root
The input line voltage adopted according to alternating current sampling circuit controls PWM1 change in duty cycle for modulation fundamental wave, through the first rectification
Level after diode D1 rectifications is the but envelope half-wave level containing high-frequency impulse by sinusoidal variations.When input line voltage etc.
Single-chip microcomputer U1 closes high frequency modulated circuit when 230V voltages, and first switch pipe Q5 does not work；MOS full-bridge rectifications are filtered
Voltage after ripple directly exports through L2, the first commutation diode D1.
In order to realize closed-loop control, the present embodiment also includes a control unit 60, the grid of the first metal-oxide-semiconductor Q1,
Second metal-oxide-semiconductor Q2 grid, the 3rd metal-oxide-semiconductor Q3 grid, the 4th metal-oxide-semiconductor Q4 grid and first switch pipe Q5 grid difference
Control unit 60 is electrically connected at, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd MOS are controlled by described control unit 60
Pipe Q3, the 4th metal-oxide-semiconductor Q4 and first switch pipe Q5 on off operating mode.Further, described control unit 60 includes single-chip microcomputer U1
And its peripheral circuit.
Further, on the sampling to AC signal, the first output end of the AC input cell 10 and second defeated
Go out end and control unit 60 is connected to by current-limiting resistance respectively, to make control unit 60 obtain the phase of alternating current voltage.Tool
Body refers to, the width that control unit passes through sampling resistor (R10, R11, R12, R14, R17, R18, R19, R20) Sample AC voltage
Value and phase, and then control the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 conduction phase with
Time.
In the present embodiment, the AC input cell 10 includes socket, the first insurance F2, lightning protection resistance RV1, common mode suppression
Inductance L1 and safety electric capacity CX1 processed, the first insurance F2 are serially connected with the zero line or live wire of socket, the common mode inhibition inductance
L1 front end is parallel to socket, and the lightning protection resistance RV1 is parallel to common mode inhibition inductance L1 front end, the safety electric capacity CX1
It is parallel to common mode inhibition inductance L1 rear end, and output of the rear end of the common mode inhibition inductance L1 as AC input cell 10
End.
As a kind of preferred embodiment, the present embodiment also includes a D/C voltage sampling unit 40, and the D/C voltage sampling is single
Member 40 includes the second sampling resistor R13 and the 3rd sampling resistor R15 being sequentially connected in series, before the second sampling resistor R13
End is connected to the output end of PFC boost unit 30, and the rear end of the 3rd sampling resistor R15 is connected to control unit 60, by
The second sampling resistor R13 and the 3rd sampling resistor R15 and make control unit 60 gather the telecommunications of the output of PFC boost unit 30
Number.Above-mentioned voltage sample part is made up of R13, R15, for giving the voltage adopted to control unit, and then determines that inversion is fallen
The phase and ON time of facies unit.
On Converting Unit, the inversion reversed phase unit 50 includes being opened by second switch pipe Q6, the 3rd switching tube Q7, the 4th
Close the inverter bridge of pipe Q8 and the 5th switching tube Q9 compositions, the grid of the second switch pipe Q6, the 3rd switching tube Q7 grid, the
Four switching tube Q8 grid and the 5th switching tube Q9 grid are connected to control unit 60, by described control unit 60
The 4th switching tube Q1, the 5th switching tube Q2, the 6th switching tube Q3 and the 7th switching tube Q4 on or off are controlled, it is described inverse to make
Become the output AC voltage of reversed phase unit 50.Further, the output end of the inversion reversed phase unit 50 is in series with the second insurance F1.
Above-mentioned inversion reversed phase unit 50 is by second switch pipe Q6, the 3rd switching tube Q7, the switches of the 4th switching tube Q8 and the 5th
Pipe Q9 form, after filtering after DC voltage by second switch pipe Q6, load, the 5th switching tube Q9 is formed loop to load confession
Electricity, form first half period power frequency level；Second half period power frequency level is opened by the 4th switching tube Q8, load, the 3rd
Close pipe Q7 and form loop, a complete power frequency amendment alternating current wave pressure is so formed in load.Control unit exports
Pwm signal send out PWM6, PWM7L, PWM8, PWM9L respectively after drive circuit to second switch pipe Q6, the 3rd switching tube
Q7, the 4th switching tube Q8 and the 5th switching tube Q9 GATE poles.Phase in inversion phase inverter is with frequency according to control chip
The pattern of inner setting is operated.
Intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed in the utility model, have efficient
The features such as rate, high PF values, while without fan, it uses the cold true mode of nature, can eliminate noise.The utility model is complete in input
Output voltage, and fixed output frequency can be automatically adjusted in voltage range, and output voltage is exported with correcting ripple,
Automatic shaping function is pressed with to alternating current, the utility model contains voltage and current sampling circuit in addition, can anti-surge voltage with
Electric current.
Simply the utility model preferred embodiment described above, is not limited to the utility model, all in this practicality
Modification, equivalent substitution or improvement made in new technical scope etc., should be included in the model that the utility model is protected
In enclosing.
Claims (10)
1. a kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it is characterised in that include：
One AC input cell, for incoming transport electricity；
One metal-oxide-semiconductor full-bridge rectification unit, include the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the first electricity
Hold, draining for first metal-oxide-semiconductor is all connected to the first output end of AC input cell with the source electrode of the 3rd metal-oxide-semiconductor, described
The drain electrode of second metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor are all connected to the second output end of AC input cell, the first MOS
Output head anode after the interconnection of the source electrode of the source electrode of pipe and the second metal-oxide-semiconductor as metal-oxide-semiconductor full-bridge rectification unit, the described 3rd
Negative pole of output end after the drain electrode of metal-oxide-semiconductor and the drain electrode interconnection of the 4th metal-oxide-semiconductor as metal-oxide-semiconductor full-bridge rectification unit, it is described
The grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are respectively used to access
Pwm pulse signal, to make first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are simultaneously
Conducting, first electric capacity are parallel to the output end of metal-oxide-semiconductor full-bridge rectification unit；
One PFC boost unit, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit, and the PFC boost unit is used for metal-oxide-semiconductor
The output voltage of full-bridge rectification unit carries out boost conversion；
One inversion reversed phase unit, is connected to the output end of PFC boost unit, and the inversion reversed phase unit is used for PFC boost list
The output voltage inversion of member is alternating current.
2. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 1
In the PFC boost unit includes boost inductance, first switch pipe, the first commutation diode and electrochemical capacitor, the boosting
The front end of inductance is connected to the output end of input block, and the rear end of the boost inductance is connected to the drain electrode of first switch pipe, institute
The source ground of first switch pipe is stated, the grid of the first switch pipe is used to access pwm control signal all the way, and described first opens
The anode of drain electrode the first commutation diode of connection of pipe is closed, the negative electrode of first commutation diode is as PFC boost unit
Output end, and the positive pole of the negative electrode connection electrochemical capacitor of first commutation diode, the negative pole ground connection of electrochemical capacitor.
3. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 2
In being connected with pull down resistor between the grid and source electrode of the first switch pipe.
4. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 3
In also including a control unit, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the 3rd metal-oxide-semiconductor,
The grid of four metal-oxide-semiconductors and the grid of first switch pipe are electrically connected in control unit, are controlled by described control unit
First metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the on off operating mode of the 4th metal-oxide-semiconductor and first switch pipe.
5. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 4
In, the first output end and the second output end of the AC input cell are connected to control unit by current-limiting resistance respectively,
To make control unit obtain the phase of alternating current voltage.
6. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 1
Include socket, the first insurance, lightning protection resistance, common mode inhibition inductance and safety electric capacity in, the AC input cell, described
One insurance is serially connected with the zero line or live wire of socket, and the front end of the common mode inhibition inductance is parallel to socket, the lightning protection resistance
The front end of common mode inhibition inductance is parallel to, the safety electric capacity is parallel to the rear end of common mode inhibition inductance, and the common mode inhibition
Output end of the rear end of inductance as AC input cell.
7. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 4
In, also include a D/C voltage sampling unit, the D/C voltage sampling unit include the second sampling resistor for being sequentially connected in series and
3rd sampling resistor, the front end of second sampling resistor are connected to the output end of PFC boost unit, the 3rd sampling resistor
Rear end be connected to control unit, made by second sampling resistor and the 3rd sampling resistor control unit gather PFC liters
Press the electric signal of unit output.
8. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 4
In the inversion reversed phase unit is inverse including being made up of second switch pipe, the 3rd switching tube, the 4th switching tube and the 5th switching tube
Become bridge, the grid of the second switch pipe, grid, the grid of the 4th switching tube and the grid of the 5th switching tube of the 3rd switching tube
Control unit is connected to, the 4th switching tube, the 5th switching tube, the 6th switching tube and are controlled by described control unit
Seven switching tube on or off, to make the inversion reversed phase unit output AC voltage.
9. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 8
In the output end of the inversion reversed phase unit is in series with the second insurance.
10. the intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its feature exist as claimed in claim 4
In described control unit includes single-chip microcomputer and its peripheral circuit.
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|---|---|---|---|
| CN201720043756.3U CN206727882U (en) | 2017-01-12 | 2017-01-12 | A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
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| CN201720043756.3U CN206727882U (en) | 2017-01-12 | 2017-01-12 | A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787809A (en) * | 2017-01-12 | 2017-05-31 | 广东百事泰电子商务股份有限公司 | A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
-
2017
- 2017-01-12 CN CN201720043756.3U patent/CN206727882U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787809A (en) * | 2017-01-12 | 2017-05-31 | 广东百事泰电子商务股份有限公司 | A kind of intelligent amendment wave voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
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