CN206712660U - A kind of Bootstrapping drive circuit and switching power circuit - Google Patents
A kind of Bootstrapping drive circuit and switching power circuit Download PDFInfo
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- CN206712660U CN206712660U CN201720334480.4U CN201720334480U CN206712660U CN 206712660 U CN206712660 U CN 206712660U CN 201720334480 U CN201720334480 U CN 201720334480U CN 206712660 U CN206712660 U CN 206712660U
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Abstract
The utility model discloses a kind of Bootstrapping drive circuit, applied to Switching Power Supply, Switching Power Supply includes being serially connected in the magnetic bead in the semiconductor switch device loop of lower bridge arm, and the first end of magnetic bead is connected to the first end of the semiconductor switch device of the upper bridge arm in Switching Power Supply, wherein, the Bootstrapping drive circuit includes diode, bootstrap capacitor and first resistor, the positive pole of diode is connected to the positive pole of voltage source, the negative pole of diode is connected to the first end of bootstrap capacitor, and the second end of bootstrap capacitor is connected to the first end of magnetic bead via first resistor.The utility model to increase the charge and discharge electrostrictive coefficient of bootstrapping driving circuit, and then avoids the problem of Bootstrapping drive circuit electric voltage exception is higher by a resistance of being connected on bootstrapping driving circuit.Further, by the way that resistance and magnetic bead are accessed into Switching Power Supply simultaneously, the high-frequency resonant of switching device can effectively be improved.
Description
Technical field
It the utility model is related to semiconductor switch device technical field, more particularly to a kind of Bootstrapping drive circuit and switch
Power circuit.
Background technology
In semiconductor switch device, generally use RCD (Residual Current Device, residual current device)
Absorbing circuit absorbs high-frequency resonant.Can be with the intrinsic parasitic capacitance of adjusting device by RCD absorbing circuits, but be difficult that its is complete
It totally disappeared and remove.Resonant frequency can be reduced by increasing electric capacity, resistance in resonant capacitance or adjustment RC filtering, but finally all can not be complete
It totally disappeared and remove resonance phenomena.Therefore, will to EMC (Electro Magnetic Compatibility, Electro Magnetic Compatibility) at some
Higher application scenario is asked, has strict demand to frequency of oscillation, it will usually improves EMC performances using magnetic bead.
In Switching Power Supply, in bridge circuit, the driving of upper bridge arm is typically all floating ground, uses bootstrapping actuation techniques
It is a kind of inexpensive solution.Bootstrapping driving is typically formed using a bootstrap capacitor and a diode, bootstrap capacitor
Driving voltage with driving reference ground to have much relations floatingly, and after introducing magnetic bead is used for EMC performance improvements, bootstrapping driving can produce
The problem of raw driving voltage exception.Fig. 1 show the signal of the switching power circuit using Bootstrapping drive circuit in the prior art
Figure.As shown in figure 1, when diode D2 is turned on, electric current drastically becomes big, and a voltage drop can be produced on magnetic bead L1, causes HS points
Voltage-to-ground is negative, and because impedance is very low on bootstrapping driving circuit, charging rate is fast, and voltage on bootstrap capacitor can be made to fill height,
It is probably voltage more than MOS (Metal Oxide Semiconductor, metal-oxide semiconductor (MOS)) in some severe operating modes
Pipe grid leak is extremely pressure-resistant, damages metal-oxide-semiconductor.
Utility model content
The purpose of this utility model is that bootstrapping is driven for prior art after introducing magnetic bead is used for EMC performance improvements
Dynamic the problem of producing driving voltage exception, there is provided a kind of Bootstrapping drive circuit and switching power circuit.
In order to achieve the above object, the technical scheme of use is the utility model：A kind of Bootstrapping drive circuit, applied to opening
Powered-down source, the Switching Power Supply include being serially connected in the magnetic bead in the semiconductor switch device loop of lower bridge arm, and the of the magnetic bead
One end is connected to the first end of the semiconductor switch device of the upper bridge arm in the Switching Power Supply, and the Bootstrapping drive circuit includes
Diode, bootstrap capacitor and first resistor, the positive pole of the diode are connected to the positive pole of voltage source, the negative pole of the diode
The first end of the bootstrap capacitor is connected to, the second end of the bootstrap capacitor is connected to the magnetic bead via the first resistor
First end.
Preferably, boot driving voltage uC, the first resistor the second end and the tie point of the first end of the magnetic bead
The negative pulse amplitude u at placeHS, the bootstrap capacitor capacitance c, the resistance r of the first resistor and partly leading for the upper bridge arm
Meet following relation between the maximum voltage value u that the grid of body switching device pipe can be born：
The utility model also provides a kind of switching power circuit, including voltage source, Bootstrapping drive circuit, upper bridge arm are partly led
Body switching device, the semiconductor switch device of lower bridge arm, magnetic bead, the Bootstrapping drive circuit include diode, bootstrap capacitor and
First resistor, the positive pole of the diode are connected to the positive pole of the voltage source, the negative pole of the diode be connected to it is described from
The first end of electric capacity is lifted, the second end of the bootstrap capacitor is connected to first end and the company of the magnetic bead via the first resistor
The first end of the semiconductor switch device of the upper bridge arm is connected to, the second end of the magnetic bead is connected to the lower bridge arm semiconductor
The first end of switching device, the second end ground connection of the lower bridge arm semiconductor switch device.
Preferably, boot driving voltage uC, the first resistor the second end and the tie point of the first end of the magnetic bead
The negative pulse amplitude u at placeHS, the bootstrap capacitor capacitance c, the resistance r of the first resistor and partly leading for the upper bridge arm
Meet following relation between the maximum voltage value u that the grid of body switching device can be born：
Preferably, the second end of the semiconductor switch device of the upper bridge arm is connected with second resistance and amplifier, described
The negative pole of diode is connected to the first input end of the amplifier, and the second end of the bootstrap capacitor is connected to the amplifier
The second input, the second resistance is connected to the output end of the amplifier and the semiconductor switch device of the upper bridge arm
The second end between.
Preferably, loop where the semiconductor switch device of the lower bridge arm includes fly-wheel diode, and the of the magnetic bead
Two ends are connected to the negative pole of the fly-wheel diode, the plus earth of the fly-wheel diode.
Implement the utility model embodiment, have the advantages that：The utility model passes through on bootstrapping driving circuit
One resistance of series connection, to increase the charge and discharge electrostrictive coefficient of bootstrapping driving circuit, and then it is inclined to avoid Bootstrapping drive circuit electric voltage exception
The problem of high.Further, by the way that resistance and magnetic bead are accessed into Switching Power Supply simultaneously, the height of switching device can effectively be improved
Frequency resonance.
Brief description of the drawings
Below in conjunction with drawings and examples, the utility model is described in further detail, in the accompanying drawings：
Fig. 1 show the schematic diagram of the switching power circuit using Bootstrapping drive circuit in the prior art.
Fig. 2 show the schematic diagram of the switching power circuit using Bootstrapping drive circuit of one embodiment of the invention offer.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only explaining this
Utility model, it is not used to limit the utility model.
Embodiment one
The utility model provides a kind of Bootstrapping drive circuit, applied to Switching Power Supply.As shown in Fig. 2 the Switching Power Supply
First end including the magnetic bead L1 in the semiconductor switch device loop for being serially connected in lower bridge arm, and magnetic bead L1 is connected to the switch
The semiconductor switch device U1 of upper bridge arm in power supply first end, for example, as shown in Fig. 2 semiconductor switch device U1 is MOS
Pipe, then magnetic bead L1 first end is connected to the source electrode of metal-oxide-semiconductor；The input voltage vin of Switching Power Supply connects with external power source input,
The output voltage Vout of Switching Power Supply is connected with using the external devices of the external power source.The Bootstrapping drive circuit includes diode
D2, bootstrap capacitor C1 and first resistor R1.The positive pole of the diode D2 is connected to voltage source Uc positive pole, the diode D2
Negative pole be connected to the first end of the bootstrap capacitor C1, the second end of the bootstrap capacitor C1 connects via the first resistor R1
It is connected to the first end of the magnetic bead L1.Above-mentioned semiconductor switch device U1 concretely metal-oxide-semiconductors.
In Switching Power Supply, can by connect magnetic bead reduce switching device high-frequency resonant, if but magnetic bead be connected on down
On the semiconductor devices loop of bridge arm, such as L1, then the violent situation of curent change in afterflow, can produce voltage on magnetic bead
Drop, floating ground reference point HS (the second end of the first resistor R1 and the tie point of the first end of the magnetic bead L1) occur one
Negative pulse.The switching device of upper bridge arm is driven using bootstrapping, at the afterflow moment, bootstrap capacitor C1 chargings, because floating ground reference point
There is a negative pulse, so the voltage on bootstrap capacitor can abnormal higher, higher degree (magnetic directly proportional to magnetic bead L1 voltage drop
Pearl characteristic is relevant with size of current).The utility model is increased bootstrapping and driven by the first resistor R1 that connected on bootstrap capacitor loop
The charge and discharge electric constant in dynamic loop, avoids negative pulse.
Further, boot driving voltage uC, the first resistor R1 the second end and the first end of the magnetic bead L1
Negative pulse amplitude u at tie pointHS, the capacitance c of the bootstrap capacitor, the resistance r of the first resistor and the upper bridge arm
Semiconductor switch device U1 the maximum voltage value u that can bear of grid between meet following relation：
The utility model is by a resistance of being connected on bootstrapping driving circuit, to increase the discharge and recharge of bootstrapping driving circuit
Coefficient, and then avoid the problem of Bootstrapping drive circuit electric voltage exception is higher.
Embodiment two
The utility model provides a kind of Switching Power Supply.As shown in Fig. 2 including voltage source Uc, Bootstrapping drive circuit, upper bridge arm
Semiconductor switch device U1, semiconductor switch device, the magnetic bead L1 of lower bridge arm.The Bootstrapping drive circuit include diode D2,
Bootstrap capacitor C1 and first resistor R1.The positive pole of the diode D2 is connected to the positive pole of the voltage source Uc, the diode
D2 negative pole is connected to the first end of the bootstrap capacitor C1, and the second end of the bootstrap capacitor C1 is via the first resistor R1
It is connected to the first end of the magnetic bead L1 and is connected to the semiconductor switch device U1 of upper bridge arm first end, for example, such as
Shown in Fig. 2, semiconductor switch device U1 is metal-oxide-semiconductor, then magnetic bead L1 first end is connected to the source electrode of metal-oxide-semiconductor；The magnetic bead L1
The second end be connected to the first end of the lower bridge arm semiconductor switch device, the second of the lower bridge arm semiconductor switch device
End ground connection.
In Switching Power Supply, can by connect magnetic bead reduce switching device high-frequency resonant, if but magnetic bead be connected on down
On the semiconductor devices loop of bridge arm, such as L1, then the violent situation of curent change in afterflow, can produce voltage on magnetic bead
Drop, floating ground reference point (the second end of the first resistor R1 and the tie point of the first end of the magnetic bead L1) occur that one is born
Pulse.The switching device of upper bridge arm is driven using bootstrapping, at the afterflow moment, bootstrap capacitor C1 chargings, because floating ground reference point has
One negative pulse, so the voltage on bootstrap capacitor can abnormal higher, higher degree (magnetic bead directly proportional to magnetic bead L1 voltage drop
Characteristic is relevant with size of current).The utility model increases bootstrapping driving by the first resistor R1 that connected on bootstrap capacitor loop
The charge and discharge electric constant in loop, avoids negative pulse.
Further, the semiconductor switch device U1 of upper bridge arm the second end is connected with second resistance R2 and amplifier A.Institute
The negative pole for stating diode D2 is connected to the first input end of the amplifier A, and the second end of the bootstrap capacitor C1 is connected to institute
State amplifier A the second input, the second resistance R2 be connected to the amplifier A output end and the upper bridge arm half
Between conductor switching device U1 the second end.Specifically, the semiconductor switch device U1 of upper bridge arm the second end is control terminal, example
Such as, the semiconductor switch device U1 of upper bridge arm is metal-oxide-semiconductor, then second resistance R2 is connected to the output end of the amplifier A and upper
Between the semiconductor switch device U1 of bridge arm grid.
Further, loop where the semiconductor switch device of the lower bridge arm includes sustained diode 1, the magnetic bead
L1 the second end is connected to the negative pole of the sustained diode 1, the plus earth of the sustained diode 1.
Further, boot driving voltage uC, the first resistor R1 the second end and the company of the first end of the magnetic bead
The negative pulse amplitude u of junctionHS, the capacitance c of the bootstrap capacitor, the resistance r of the first resistor R1 and the upper bridge arm
Semiconductor switch device U1 the maximum voltage value u that can bear of grid between meet following relation：
The utility model is by a resistance of being connected on bootstrapping driving circuit, to increase the discharge and recharge of bootstrapping driving circuit
Coefficient, and then avoid the problem of Bootstrapping drive circuit electric voltage exception is higher.Further, by the way that resistance and magnetic bead are connect simultaneously
Enter Switching Power Supply, can effectively improve the high-frequency resonant of switching device.
Above disclosed is only a kind of preferred embodiment of the utility model, not to limit the utility model,
All made within spirit of the present utility model and principle all any modification, equivalent and improvement etc., should be included in this reality
Within new protection domain.
Claims (6)
1. a kind of Bootstrapping drive circuit, applied to Switching Power Supply, the semiconductor that the Switching Power Supply includes being serially connected in lower bridge arm is opened
The magnetic bead in device loop is closed, and the first end of the magnetic bead is connected to the semiconductor switching device of the upper bridge arm in the Switching Power Supply
The first end of part, it is characterised in that the Bootstrapping drive circuit includes diode, bootstrap capacitor and first resistor, two pole
The positive pole of pipe is connected to the positive pole of voltage source, and the negative pole of the diode is connected to the first end of the bootstrap capacitor, it is described from
The second end for lifting electric capacity is connected to the first end of the magnetic bead via the first resistor.
2. Bootstrapping drive circuit according to claim 1, it is characterised in that bootstrapping driving voltage uC, the first resistor
Second end and the negative pulse amplitude u at the tie point of the first end of the magnetic beadHS, the bootstrap capacitor capacitance c, described
Meet such as between the maximum voltage value u that the grid of the semiconductor switch device of the resistance r of one resistance and the upper bridge arm can be born
Lower relation：
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3. a kind of switching power circuit, including the semiconductor switch device of voltage source, Bootstrapping drive circuit, upper bridge arm, lower bridge arm
Semiconductor switch device, magnetic bead, it is characterised in that the Bootstrapping drive circuit include diode, bootstrap capacitor and first electricity
Resistance, the positive pole of the diode are connected to the positive pole of the voltage source, and the negative pole of the diode is connected to the bootstrap capacitor
First end, the second end of the bootstrap capacitor is connected to the first end of the magnetic bead via the first resistor and is connected to institute
The first end of the semiconductor switch device of bridge arm is stated, the second end of the magnetic bead is connected to the lower bridge arm semiconductor switching device
The first end of part, the second end ground connection of the lower bridge arm semiconductor switch device.
4. switching power circuit according to claim 3, it is characterised in that bootstrapping driving voltage uC, the first resistor
Second end and the negative pulse amplitude u at the tie point of the first end of the magnetic beadHS, the bootstrap capacitor capacitance c, described
Meet such as between the maximum voltage value u that the grid of the semiconductor switch device of the resistance r of one resistance and the upper bridge arm can be born
Lower relation：
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5. switching power circuit according to claim 3, it is characterised in that the semiconductor switch device of the upper bridge arm
Second end is connected with second resistance and amplifier, and the negative pole of the diode is connected to the first input end of the amplifier, institute
The second end for stating bootstrap capacitor is connected to the second input of the amplifier, and the second resistance is connected to the amplifier
Between second end of the semiconductor switch device of output end and the upper bridge arm.
6. switching power circuit according to claim 3, it is characterised in that the semiconductor switch device institute of the lower bridge arm
Include fly-wheel diode in loop, the second end of the magnetic bead is connected to the negative pole of the fly-wheel diode, the pole of afterflow two
The plus earth of pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720334480.4U CN206712660U (en) | 2017-03-31 | 2017-03-31 | A kind of Bootstrapping drive circuit and switching power circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720334480.4U CN206712660U (en) | 2017-03-31 | 2017-03-31 | A kind of Bootstrapping drive circuit and switching power circuit |
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| Publication Number | Publication Date |
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| CN206712660U true CN206712660U (en) | 2017-12-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046376A (en) * | 2021-11-23 | 2022-02-15 | 浙江工业大学 | Electromagnetic switch valve driving circuit and method based on capacitance bootstrap technology |
-
2017
- 2017-03-31 CN CN201720334480.4U patent/CN206712660U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046376A (en) * | 2021-11-23 | 2022-02-15 | 浙江工业大学 | Electromagnetic switch valve driving circuit and method based on capacitance bootstrap technology |
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Address after: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: Suzhou Huichuan United Power System Co.,Ltd. Address before: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU HUICHUAN UNITED POWER SYSTEM Co.,Ltd. |