CN206698149U - High-power IGBT device electric energy reclaims heat abstractor - Google Patents
High-power IGBT device electric energy reclaims heat abstractor Download PDFInfo
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- CN206698149U CN206698149U CN201720427959.2U CN201720427959U CN206698149U CN 206698149 U CN206698149 U CN 206698149U CN 201720427959 U CN201720427959 U CN 201720427959U CN 206698149 U CN206698149 U CN 206698149U
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Abstract
The utility model provides high-power IGBT device electric energy recovery heat abstractor.The high-power IGBT device electric energy recovery heat abstractor is made up of high-power IGBT device, fin, semiconductor thermoelectric module, mu balanced circuit, battery and water cooled pipeline.The device is that the thermo-electric generation sheet of semiconductor thermoelectric module is fixed on the fin of fin by buckle, the semiconductor thermoelectric module realizes heat to electricity conversion using thermoelectric power generation principle, the electric energy output end connection mu balanced circuit input of semiconductor thermoelectric module, circuit output end of pressure-stabilizing connection battery.A large amount of heat energy of high-power IGBT device are converted into the electric energy for being available for utilizing by the utility model.Current conversion station, transformer station in practical power systems etc. can be widely applied, and can store gained electric energy and be applied to other electrical equipments.
Description
Technical field
It the utility model is related to semiconductor temperature differential generating field, and in particular to one kind distributes heat using high-power IGBT device
Amount carries out the device of thermo-electric generation recovery radiating.
Background technology
With the development of Power Electronic Technique, IGBT device be widely used in, large-power occasions.It is such as defeated in direct current
In the current conversion station of electric system, frequently with IGBT as converter valve, to realize the conversion of alternating current-direct current.However, IGBT is due to working
During conduction loss and switching loss be present, cause IGBT caloric value bigger, if can not smoothly radiate, just will cause
Device temperature rise is too high, causes Module Fail.If amount of heat caused by IGBT can be used to generate electricity, then can not only make to radiate
Journey is smoothed out, and industrial waste heat can be made to be utilized, improve the utilization rate of the energy, save natural resources.Therefore study
There is very real meaning to generate electricity using the heat of high-power IGBT device.
Thermoelectric generation is a kind of Seebeck effect based on semi-conducting material, directly converts heat into the skill of electric energy
Art.Thermoelectric generation has the advantages that shockproof, noiseless, pollution-free, compact-sized, reliability is high, service life is long, with
Era development, in the environment of energy scarcity problem becomes increasingly conspicuous, thermoelectric generation obtains many national attention.But
The efficiency of thermoelectric generation is not high in actual use, and limiting the reason for its efficiency improves mainly has heat conduction not fill
Divide, thermal losses is too big etc. in diabatic process.These deficiencies, which can turn into, restricts the bottle that thermoelectric generation is used widely
Neck.
Utility model content
The purpose of this utility model is to solve the problems, such as that above-mentioned IGBT energy waste and overcomes the temperature difference caused by sending used heat
A kind of the shortcomings that generating efficiency is not high, there is provided new electric energy realized based on semiconductor thermoelectric module on high-power IGBT device
Recycle device.
The purpose of this utility model is achieved through the following technical solutions.
High-power IGBT device electric energy reclaims heat abstractor, and it includes high-power IGBT device, fin, semiconductor thermoelectric
Module, mu balanced circuit, battery and water cooled pipeline, the fin are arranged on high-power IGBT device, the fin of fin
It is fixed together with the thermo-electric generation sheet of semiconductor thermoelectric module, semiconductor thermoelectric module realizes thermoelectricity using thermoelectric power generation principle
Conversion, the voltage output end of semiconductor thermoelectric module connects with mu balanced circuit input, after some semiconductor thermoelectric modules
Circuit output end of pressure-stabilizing series and parallel, reconnect battery or other electrical equipments.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
The width design of degree and water cooled pipeline, can effectively radiate, realize that maximal efficiency realizes heat to electricity conversion again.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
Semiconductor thermoelectric module described in the width of degree and water cooled pipeline is made up of some pieces of thermo-electric generation sheets, and the hot face of thermo-electric generation sheet is straight
Connect and be attached on fin, there is thermo-electric generation sheet attaching the both sides of each fin.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
Water cooled pipeline described in the width of degree and water cooled pipeline is by inlet channel, rectangle attach pipeline, outlet conduit is formed, the water cooled pipeline
Rectangle attach pipeline and be close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece around mode using vertical serpentine rings, make huyashi-chuuka (cold chinese-style noodles) and hot face enough
Temperature difference.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
The thermo-electric generation sheet fin fixed by snap in fin in semiconductor thermoelectric module described in the width of degree and water cooled pipeline
On, buckle has good heat-proof quality, and can dismantle, in order to change the thermo-electric generation in semiconductor thermoelectric module
Piece.
High-power IGBT device electric energy described in the utility model reclaims heat abstractor directly by the temperature of semiconductor thermoelectric module
Poor power generation sheet is covered in the fin both side surface of fin, by the waste-heat power generation directly distributed using IGBT, realizes that the energy returns
Receive the purpose utilized.
Compared with prior art, the utility model has the following advantages that and beneficial effect：
1. high-power IGBT device electric energy of the present utility model reclaims heat abstractor, current conversion station rectification, inversion electricity are installed on
On the switching device on road, reach the purpose of IGBT coolings and Waste Heat Reuse, realize that the energy effectively utilizes.
2. high-power IGBT device electric energy of the present utility model reclaims heat abstractor, including high-power IGBT device, radiating
Piece, semiconductor thermoelectric module, mu balanced circuit, battery and water cooled pipeline, there is higher power generation stability and reliability.
3. high-power IGBT device electric energy of the present utility model reclaims heat abstractor, the temperature difference in its semiconductor thermoelectric module
Power generation sheet is fixed by snap, and on the fin of fin, buckle can be dismantled, and be advantageous at any time examine thermo-electric generation sheet
Look into replacing.
Brief description of the drawings
Fig. 1 is the theory diagram that high-power IGBT device electric energy reclaims heat abstractor in example.
Fig. 2 is apparatus structure schematic diagram in the example of the utility model（With the structure example on single fin）.
Fig. 3 is that the single fin semiconductor-on-insulator electrothermal module of device and water cooled pipeline are partially schematic in the example of the utility model
Figure.
Embodiment
In order that the utility model is more clearly understood, below with reference to accompanying drawing, to preferred embodiment of the present utility model
It is described in detail.It should be appreciated that preferred embodiment only for illustrate the utility model, rather than in order to limit this practicality newly
The protection domain of type.
This example a kind of high-power IGBT device electric energy recovery heat abstractor, including high-power IGBT device, fin,
Semiconductor thermoelectric module, mu balanced circuit, battery and water cooled pipeline.The present apparatus is by the voltage stabilizing after some semiconductor thermoelectric modules
Circuit output end series and parallel, to ensure last output sufficient amount electrical power.
It is theory diagram of the present utility model as shown in Figure 1, fin 4 is fixed on one by buckle 6 and thermo-electric generation sheet 2
Rise, semiconductor thermoelectric module is realized heat to electricity conversion using thermoelectric power generation principle and is connected with fin 3, mu balanced circuit input with
The electric energy output end connection of semiconductor thermoelectric module, circuit output end of pressure-stabilizing connection battery realize electric energy recovery and radiating.
This example recovery high-power IGBT used heat produces the part of electric energy, as shown in Fig. 2 fin 3 is arranged on into big work(
In rate IGBT device 1, two sides of each fin 4 are solid by buckle 6 according to fin 4 and the size of thermo-electric generation sheet 2
Surely upper correct amount thermo-electric generation sheet 2 so that the heat that fin 4 distributes can be fully by sorption enhanced.Fig. 2 is one embodiment
Schematic diagram, represent that the both sides of each fin 4 are fully covered by four pieces of thermo-electric generation sheets put by sphere of movements for the elephants shape 2.Tradition
Fin spacing of fin the width calculation of the thickness of thermo-electric generation sheet 2 and water cooled pipeline is entered, while tradition
Heat abstractor do not account for heat energy being converted into electric energy by thermo-electric generation sheet 2 yet, and the design considers thermo-electric generation sheet 2
Thickness and water cooled pipeline width, produce enough thermo-electric generation effects.Semiconductor thermoelectric module is former using thermo-electric generation
After reason realizes heat to electricity conversion, the electric energy output end of semiconductor thermoelectric module connects with mu balanced circuit input, then is partly led some
Circuit output end of pressure-stabilizing series and parallel after body electrothermal module, battery or supply other equipment are reconnected, accident can be used as standby
With power supply, illumination etc. is provided for high-voltage convertor station.
As shown in figure 3, being tightly secured in thermo-electric generation sheet 2 and fin 4 together by buckle 6, ensure fin 4 and the temperature difference
Heat between power generation sheet 2 fully conducts, while buckle 6 is detachable, is conveniently replaceable power generation sheet.Each piece of each point of the both sides of fin 4
One water cooled pipeline of cloth, by inlet channel 7, rectangle attach pipeline 9, outlet conduit 8 is formed, the rectangle attaches every water cooled pipeline
Pipeline 9 is close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece 2 using vertical serpentine rings around mode, protects the cold and hot two sides of thermo-electric generation sheet 2
Enough temperature differences are held, to improve generating efficiency.
Further analyze operation principle of the present utility model and designing points.
1st, the scientific reasonability of the spacing of fin：
（1）It is necessary on the two sides of each plate thermo-electric generation piece according to the requirement of thermo-electric generation sheet in semiconductor thermoelectric module
Certain voltage could be produced with certain temperature difference.And the spacing of fin of traditional fin is not by thermo-electric generation sheet
Thickness and the width calculation of water cooled pipeline enter, while traditional heat abstractor does not account for sending out heat energy by the temperature difference yet
Electric piece is converted into electric energy, therefore the design needs to consider the thickness of thermo-electric generation sheet and the width of water cooled pipeline, produces enough
Thermo-electric generation effect.
（2）In order to reach higher generating efficiency, the fin both side surface overwhelming majority of fin should be made to be sent out by the temperature difference
Electric piece covering, reduces exposed surface area as far as possible.
2nd, the function of buckle：
（1）Thermo-electric generation sheet in semiconductor thermoelectric module is fixed by snap on the fin of fin, and buckle has
There is good heat-proof quality, and can dismantle, in order to change thermo-electric generation sheet.
（2）The good heat-proof quality of buckle is to prevent that power generation sheet the two poles of the earth temperature difference not enough influences caused by buckle heat conduction
Generating efficiency.
In summary：A kind of high-power IGBT device electric energy recovery heat abstractor provided by the utility model, can be applied to
High-voltage convertor station etc. needs to use high-power IGBT occasion, both can monitor IGBT working in real time, while carry again
For the station electricity consumption of certain power, the effect that very good energy recovery utilizes can be played.
Preferred embodiment of the present utility model is the foregoing is only, is not limited to the utility model, for this technology
For the those of ordinary skill in field, the technical solution of the utility model is modified or equivalent substitution, without departure from this
The protection domain of utility model.
Claims (5)
1. high-power IGBT device electric energy reclaims heat abstractor, it is characterised in that including high-power IGBT device, fin, partly leads
Body electrothermal module, mu balanced circuit, battery and water cooled pipeline, the fin are arranged on high-power IGBT device, fin
Fin and the thermo-electric generation sheet of semiconductor thermoelectric module be fixed together, semiconductor thermoelectric module is real using thermoelectric power generation principle
Existing heat to electricity conversion, the voltage output end of semiconductor thermoelectric module connects with mu balanced circuit input, by some semiconductor thermoelectric moulds
Circuit output end of pressure-stabilizing series and parallel after block, reconnect battery or other electrical equipments.
2. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the fin
Including a base and some fins, spacing of fin is according to the thickness of thermo-electric generation sheet and the width design of water cooled pipeline.
3. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the semiconductor
Electrothermal module is made up of some pieces of thermo-electric generation sheets, and the hot face of thermo-electric generation sheet is directly attached on fin, and the two of each fin
There is thermo-electric generation sheet attaching side.
4. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the water cooling tube
By inlet channel, rectangle attach pipeline, outlet conduit is formed, the rectangle of the water cooled pipeline attaches pipeline and uses vertical serpentine rings in road
It is close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece around mode, makes huyashi-chuuka (cold chinese-style noodles) and the enough temperature differences in hot face.
5. the high-power IGBT device electric energy recovery heat abstractor according to claim 1 and claim 3, it is characterised in that
Thermo-electric generation sheet in the semiconductor thermoelectric module is fixed by snap on the fin of fin, and buckle has thermal insulation
Energy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720427959.2U CN206698149U (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720427959.2U CN206698149U (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206698149U true CN206698149U (en) | 2017-12-01 |
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ID=60445639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720427959.2U Expired - Fee Related CN206698149U (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206698149U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972783A (en) * | 2017-04-22 | 2017-07-21 | 华南理工大学 | High-power IGBT device electric energy reclaims heat abstractor |
| CN108646507A (en) * | 2018-05-15 | 2018-10-12 | 芜湖威灵数码科技有限公司 | A kind of holographic projector with heat sinking function |
| CN112327967A (en) * | 2020-10-19 | 2021-02-05 | 珠海格力电器股份有限公司 | Temperature control device and method of power device and electrical equipment |
-
2017
- 2017-04-22 CN CN201720427959.2U patent/CN206698149U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972783A (en) * | 2017-04-22 | 2017-07-21 | 华南理工大学 | High-power IGBT device electric energy reclaims heat abstractor |
| CN108646507A (en) * | 2018-05-15 | 2018-10-12 | 芜湖威灵数码科技有限公司 | A kind of holographic projector with heat sinking function |
| CN112327967A (en) * | 2020-10-19 | 2021-02-05 | 珠海格力电器股份有限公司 | Temperature control device and method of power device and electrical equipment |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171201 Termination date: 20190422 |