CN206698149U - High-power IGBT device electric energy reclaims heat abstractor - Google Patents

Abstract

The utility model provides a high-power IGBT device electric energy recovery heat dissipation device. The high-power IGBT device electric energy recovery cooling device is composed of a high-power IGBT device, a heat sink, a semiconductor thermoelectric module, a voltage stabilizing circuit, a storage battery and a water-cooling pipeline. The device fixes the thermoelectric power generation sheet of the semiconductor thermoelectric module on the fin of the heat sink by buckling. The semiconductor thermoelectric module uses the principle of thermoelectric power generation to realize thermoelectric conversion. The output end of the circuit is connected to the storage battery. The utility model converts a large amount of heat energy of a high-power IGBT device into available electric energy. It can be widely used in converter stations and substations in the actual power system, and the obtained electric energy can be stored and applied to other electrical equipment.

Description

High-power IGBT device power recovery cooling device

technical field

The utility model relates to the field of semiconductor thermoelectric power generation, in particular to a device which utilizes high-power IGBT devices to dissipate heat to perform thermoelectric power generation, recovery and heat dissipation.

Background technique

With the development of power electronics technology, IGBT devices have been widely used in medium and high power applications. For example, in the converter station of the direct current transmission system, IGBT is often used as the converter valve to realize the conversion of AC and DC. However, due to the conduction loss and switching loss in the working process of the IGBT, the heat generated by the IGBT is relatively large. If the heat cannot be dissipated smoothly, the temperature of the device will rise too high and the module will fail. If a large amount of heat generated by IGBT can be used for power generation, not only can the cooling process be carried out smoothly, but also industrial waste heat can be utilized, energy utilization can be improved, and natural resources can be saved. Therefore, it is of practical significance to study the use of heat from high-power IGBT devices to generate electricity.

Thermoelectric power generation technology is a technology that directly converts thermal energy into electrical energy based on the Seebeck effect of semiconductor materials. Thermoelectric power generation technology has the advantages of no vibration, no noise, no pollution, compact structure, high reliability, and long service life. With the development of the times, in the environment of increasingly prominent energy shortages, thermoelectric power generation technology has attracted the attention of many countries. However, in actual use, the efficiency of thermoelectric power generation technology is not high. The main reasons that limit the improvement of its efficiency are insufficient heat conduction, too much heat loss during the heat transfer process, and so on. These deficiencies will become the bottleneck restricting the wide application of thermoelectric power generation technology.

Utility model content

The purpose of this utility model is to solve the problem of energy waste caused by the waste heat generated by the above-mentioned IGBT and overcome the shortcomings of low power generation efficiency due to temperature difference, and provide a new type of electric energy recovery and utilization device based on semiconductor thermoelectric modules implemented on high-power IGBT devices.

The purpose of this utility model is achieved through the following technical solutions.

High-power IGBT device power recovery heat dissipation device, which includes high-power IGBT devices, heat sinks, semiconductor thermoelectric modules, voltage stabilizing circuits, batteries and water cooling pipes, the heat sink is installed on the high-power IGBT devices, the fins of the heat sink and The thermoelectric power generation sheets of the semiconductor thermoelectric module are fixed together. The semiconductor thermoelectric module realizes thermoelectric conversion by using the principle of thermoelectric power generation. The voltage output terminal of the semiconductor thermoelectric module is connected to the input terminal of the voltage stabilizing circuit. , Parallel, and then connect the battery or other electrical equipment.

Further, the heat sink includes a base and several fins, and the spacing between the fins is designed according to the thickness of the thermoelectric power generation sheet and the width of the water-cooling pipe, which can not only effectively dissipate heat, but also achieve maximum efficiency to realize thermoelectric conversion.

Further, the heat sink includes a base and several fins, and the distance between the fins is based on the thickness of the thermoelectric generation sheet and the width of the water-cooling pipe. Attached to the fins, there are thermoelectric power generation sheets attached to both sides of each fin.

Further, the heat sink includes a base and several fins, and the distance between the fins is based on the thickness of the thermoelectric power generation sheet and the width of the water-cooling pipe. The water-cooling pipe is composed of a water inlet pipe, a rectangular attachment pipe, and a water outlet pipe. The water-cooling pipe The rectangular attachment pipe adopts a vertical serpentine wrapping method to cling to the cold surface of each thermoelectric power generation sheet, so that there is a sufficient temperature difference between the cold surface and the hot surface.

Further, the heat sink includes a base and several fins, and the distance between the fins is fixed on the fins of the heat sink by buckling the thermoelectric power generation fins in the semiconductor thermoelectric module according to the thickness of the thermoelectric power generation fins and the width of the water-cooling pipeline. The buckle has good heat insulation performance and can be disassembled to facilitate the replacement of the thermoelectric power generation sheet in the semiconductor thermoelectric module.

The high-power IGBT device electric energy recovery heat dissipation device of the utility model directly covers the thermoelectric power generation sheet of the semiconductor thermoelectric module on the two sides of the fin of the heat sink, and realizes the purpose of energy recovery and utilization by directly using the waste heat emitted by the IGBT to generate electricity.

Compared with the prior art, the utility model has the following advantages and beneficial effects:

1. The high-power IGBT device electric energy recovery heat dissipation device of the utility model is installed on the switching device of the rectification and inverter circuit of the converter station, so as to achieve the purpose of IGBT cooling and waste heat utilization, and realize the effective utilization of energy.

2. The high-power IGBT device electric energy recovery heat dissipation device of the utility model includes a high-power IGBT device, a heat sink, a semiconductor thermoelectric module, a voltage stabilizing circuit, a storage battery and a water-cooling pipeline, and has high power generation stability and reliability.

3. In the high-power IGBT device electric energy recovery heat dissipation device of the present utility model, the thermoelectric power generation chip in the semiconductor thermoelectric module is fixed on the fin of the heat sink through a buckle, and the buckle can be disassembled, which is conducive to checking and replacing the thermoelectric power generation chip at any time .

Description of drawings

Fig. 1 is a functional block diagram of the high-power IGBT device electric energy recovery heat dissipation device in the example.

Figure 2 is a schematic diagram of the structure of the device in the example of the utility model (using the structure on a single fin as an example).

Fig. 3 is a partial schematic diagram of the semiconductor thermoelectric module and the water-cooling pipeline on a single fin of the device in the example of the utility model.

detailed description

In order to make the utility model clearer, the preferred embodiments of the utility model will be described in detail below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments are only for illustrating the utility model, rather than limiting the protection scope of the utility model.

A high-power IGBT device electric energy recovery cooling device in this example includes a high-power IGBT device, a heat sink, a semiconductor thermoelectric module, a voltage stabilizing circuit, a storage battery and a water-cooling pipeline. This device connects the output ends of the voltage stabilizing circuits behind several semiconductor thermoelectric modules in series and in parallel to ensure the final output of sufficient electric power.

As shown in Figure 1, it is a functional block diagram of the utility model, the fins 4 are fixed together with the thermoelectric power generation sheet 2 through the buckle 6, the semiconductor thermoelectric module realizes thermoelectric conversion by using the thermoelectric power generation principle and is connected with the heat sink 3, and the voltage stabilizing circuit The input end is connected to the electric energy output end of the semiconductor thermoelectric module, and the output end of the voltage stabilizing circuit is connected to the storage battery to realize electric energy recovery and heat dissipation.

This example recycles the part of high-power IGBT waste heat to generate electric energy. As shown in Figure 2, the heat sink 3 is installed on the high-power IGBT device 1, and the two sides of each fin 4 are based on the area of the fin 4 and the thermoelectric power generation chip 2. The size is fixed with an appropriate number of thermoelectric power generation chips 2 through the buckle 6, so that the heat emitted by the fins 4 can be fully absorbed and transformed. Fig. 2 is a schematic diagram of an embodiment, showing that the two sides of each fin 4 are fully covered by four thermoelectric power generation sheets 2 arranged in the shape of "Tian". The traditional heat sink fin spacing does not take into account the thickness of the thermoelectric power generation sheet 2 and the width of the water-cooling pipe. At the same time, the traditional heat dissipation device does not consider the conversion of heat energy into electrical energy through the thermoelectric power generation sheet 2, but this design considers the thermoelectric power generation The thickness of sheet 2 and the width of the water-cooling pipeline generate sufficient thermoelectric power generation effect. After the semiconductor thermoelectric module realizes thermoelectric conversion by using the principle of thermoelectric power generation, the power output terminal of the semiconductor thermoelectric module is connected to the input terminal of the voltage stabilizing circuit, and then the output terminals of the voltage stabilizing circuit after several semiconductor thermoelectric modules are connected in series and parallel, and then connected to the battery or supply Other equipment can be used as emergency backup power supply, providing lighting for high-voltage converter stations, etc.

As shown in Figure 3, the thermoelectric power generation sheet 2 and the fin 4 are tightly fixed together by the buckle 6 to ensure sufficient heat conduction between the fin 4 and the thermoelectric power generation chip 2, and the buckle 6 is detachable for easy replacement power generation sheet. A water-cooling pipe is distributed on both sides of each fin 4, and each water-cooling pipe is composed of a water inlet pipe 7, a rectangular attachment pipe 9, and a water outlet pipe 8. The cold surface of the thermoelectric generation sheet 2 maintains a sufficient temperature difference between the hot and cold sides of the thermoelectric generation sheet 2 to improve power generation efficiency.

Further analyze the working principle and design points of the utility model.

1. The scientific rationality of the spacing of the heat sink:

(1) According to the requirements of the thermoelectric power generation sheet in the semiconductor thermoelectric module, there must be a certain temperature difference between the two sides of each thermoelectric power generation film to generate a certain voltage. However, the fin spacing of the traditional heat sink does not take into account the thickness of the thermoelectric power generation sheet and the width of the water-cooling pipe. At the same time, the traditional cooling device does not consider the conversion of heat energy into electrical energy through the thermoelectric power generation sheet. Therefore, this design needs to consider the thermoelectric power generation. The thickness of the sheet and the width of the water-cooling pipe can generate sufficient thermoelectric power generation effect.

(2) In order to achieve higher power generation efficiency, most of the surface on both sides of the fin of the heat sink should be covered by the thermoelectric power generation sheet, and the exposed surface area should be minimized.

2. The function of the buckle:

(1) Fix the thermoelectric power generation sheet in the semiconductor thermoelectric module on the fin of the heat sink through the buckle. The buckle has good heat insulation performance and can be disassembled to facilitate the replacement of the thermoelectric power generation chip.

(2) The good heat insulation performance of the buckle is to prevent the insufficient temperature difference between the two poles of the power generation sheet caused by the heat conduction of the buckle to affect the power generation efficiency.

To sum up: the utility model provides a high-power IGBT device power recovery cooling device, which can be applied to high-voltage converter stations and other occasions that need to use high-power IGBTs. It can not only monitor the working status of IGBTs in real time, but also provide certain High power station electricity consumption can achieve a very good effect of energy recovery and utilization.

The above is only a preferred embodiment of the utility model, and is not intended to limit the utility model. For those of ordinary skill in the art, modifications or equivalent replacements to the technical solutions of the utility model will not depart from the utility model scope of protection.

Claims (5)

1. High-power IGBT device electric energy recovery heat dissipation device is characterized in that it includes high-power IGBT device, heat sink, semiconductor thermoelectric module, voltage stabilizing circuit, storage battery and water cooling pipeline, and the heat sink is installed on the high-power IGBT device, and the heat sink The fins of the semiconductor thermoelectric module are fixed together with the thermoelectric power generation sheet of the semiconductor thermoelectric module. The semiconductor thermoelectric module uses the principle of thermoelectric power generation to realize thermoelectric conversion. The voltage output terminal of the semiconductor thermoelectric module is connected to the input terminal of the voltage stabilization circuit, and the voltage stabilization The output terminals of the circuit are connected in series and in parallel, and then connected to batteries or other electrical equipment. 2. The high-power IGBT device electric energy recovery cooling device according to claim 1, characterized in that the heat sink includes a base and a plurality of fins, and the fin spacing is designed according to the thickness of the thermoelectric sheet and the width of the water-cooling pipeline. 3. The high-power IGBT device electric energy recovery heat dissipation device according to claim 1, characterized in that the semiconductor thermoelectric module is composed of several thermoelectric power generation sheets, the thermal surface of the thermoelectric power generation sheet is directly attached to the fins, and each fin There are thermoelectric power generation sheets attached to both sides of the sheet. 4. The high-power IGBT device electric energy recovery heat dissipation device according to claim 1, wherein the water-cooling pipeline is composed of a water inlet pipeline, a rectangular attachment pipeline, and a water outlet pipeline, and the rectangular attachment pipeline of the water-cooling pipeline adopts a vertical snake The shape wrapping method is close to the cold surface of each thermoelectric power generation sheet, so that there is a sufficient temperature difference between the cold surface and the hot surface. 5. The high-power IGBT device electric energy recovery cooling device according to claim 1 and claim 3, characterized in that the thermoelectric power generation sheet in the semiconductor thermoelectric module is fixed on the fin of the heat sink by a buckle, and the buckle has a spacer thermal performance.