CN106972783A - High-power IGBT device electric energy reclaims heat abstractor - Google Patents
High-power IGBT device electric energy reclaims heat abstractor Download PDFInfo
- Publication number
- CN106972783A CN106972783A CN201710268378.3A CN201710268378A CN106972783A CN 106972783 A CN106972783 A CN 106972783A CN 201710268378 A CN201710268378 A CN 201710268378A CN 106972783 A CN106972783 A CN 106972783A
- Authority
- CN
- China
- Prior art keywords
- fin
- thermo
- igbt device
- electric energy
- power igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
Abstract
Heat abstractor is reclaimed the invention provides high-power IGBT device electric energy.The high-power IGBT device electric energy reclaims heat abstractor and is made up of high-power IGBT device, fin, semiconductor thermoelectric module, mu balanced circuit, battery and water cooled pipeline.The device is that the thermo-electric generation sheet of semiconductor thermoelectric module is fixed on the fin of fin by buckle, the semiconductor thermoelectric module realizes heat to electricity conversion using thermo-electric generation principle, the electric energy output end connection mu balanced circuit input of semiconductor thermoelectric module, circuit output end of pressure-stabilizing connection battery.A large amount of heat energy of high-power IGBT device are converted into the electric energy for being available for utilizing by the present invention.Current conversion station, transformer station in practical power systems etc. can be widely applied, and can store gained electric energy and be applied to other electrical equipments.
Description
Technical field
The present invention relates to semiconductor temperature differential generating field, and in particular to one kind distributes heat using high-power IGBT device and entered
Row thermo-electric generation reclaims the device of radiating.
Background technology
With the development of Power Electronic Technique, IGBT device be widely used in, large-power occasions.For example it is defeated in direct current
In the current conversion station of electric system, frequently with IGBT as converter valve, to realize the conversion of alternating current-direct current.However, IGBT is due in work
During there is conduction loss and switching loss, cause IGBT caloric value than larger, if can not smoothly radiate, just will cause
Device temperature rise is too high, cause Module Fail.If the amount of heat that can produce IGBT is used to generate electricity, then can not only make to radiate
Journey is smoothed out, and industrial waste heat can be made to be utilized, improve the utilization rate of the energy, save natural resources.Therefore study
Generated electricity using the heat of high-power IGBT device with very real meaning.
Thermoelectric generation is a kind of Seebeck effect based on semi-conducting material, directly converts heat into the skill of electric energy
Art.Thermoelectric generation has the advantages that shockproof, noiseless, pollution-free, compact conformation, reliability height, service life are long, with
Era development, in the environment of energy scarcity problem becomes increasingly conspicuous, thermoelectric generation obtains many national attention.But
The efficiency of thermoelectric generation is not high in actual use, and limiting the reason for its efficiency is improved mainly has heat conduction not fill
Point, in diabatic process thermal losses it is too big etc..These deficiencies can turn into the bottle that restriction thermoelectric generation is used widely
Neck.
The content of the invention
The purpose of the present invention is to solve the problems, such as that above-mentioned IGBT sends caused by used heat energy waste and overcomes thermo-electric generation
There is provided a kind of new electric energy recovery realized based on semiconductor thermoelectric module on high-power IGBT device for inefficient shortcoming
Utilize device.
The purpose of the present invention is achieved through the following technical solutions.
High-power IGBT device electric energy reclaims heat abstractor, and it includes high-power IGBT device, fin, semiconductor thermoelectric
Module, mu balanced circuit, battery and water cooled pipeline, the fin are arranged on high-power IGBT device, the fin of fin
It is fixed together with the thermo-electric generation sheet of semiconductor thermoelectric module, semiconductor thermoelectric module realizes thermoelectricity using thermo-electric generation principle
Conversion, voltage output end and mu balanced circuit the input connection of semiconductor thermoelectric module, after some semiconductor thermoelectric modules
Circuit output end of pressure-stabilizing series and parallel, reconnects battery or other electrical equipments.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
The width design of degree and water cooled pipeline, can effectively radiate, realize that maximal efficiency realizes heat to electricity conversion again.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
Semiconductor thermoelectric module described in the width of degree and water cooled pipeline is made up of some pieces of thermo-electric generation sheets, and the hot face of thermo-electric generation sheet is straight
Connect and be attached on fin, there is thermo-electric generation sheet attaching the both sides of each fin.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
Water cooled pipeline described in the width of degree and water cooled pipeline is attached pipeline, outlet conduit and constituted by inlet channel, rectangle, the water cooled pipeline
Rectangle attach pipeline and be close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece around mode using vertical serpentine rings, make huyashi-chuuka (cold chinese-style noodles) and hot face enough
Temperature difference.
Further, the fin includes a base and some fins, and spacing of fin is according to the thickness of thermo-electric generation sheet
The thermo-electric generation sheet fin fixed by snap in fin in semiconductor thermoelectric module described in the width of degree and water cooled pipeline
On, buckle has good heat-proof quality, and can dismantle, in order to change the thermo-electric generation in semiconductor thermoelectric module
Piece.
High-power IGBT device electric energy of the present invention reclaims heat abstractor and directly sends out the temperature difference of semiconductor thermoelectric module
Electric piece is covered in the fin both side surface of fin, by the waste-heat power generation directly distributed using IGBT, realizes energy recovery profit
Purpose.
Compared with prior art, the invention has the advantages that and beneficial effect：
1. the high-power IGBT device electric energy of the present invention reclaims heat abstractor, current conversion station rectification, the switch of inverter circuit are installed on
On device, the purpose of IGBT coolings and Waste Heat Reuse is reached, realizes that the energy is effectively utilized.
2. the high-power IGBT device electric energy of the present invention reclaims heat abstractor, including high-power IGBT device, fin, half
Conductor electrothermal module, mu balanced circuit, battery and water cooled pipeline, with higher power generation stability and reliability.
3. the high-power IGBT device electric energy of the present invention reclaims the thermo-electric generation in heat abstractor, its semiconductor thermoelectric module
Piece is fixed by snap, and on the fin of fin, buckle can be dismantled, and be conducive at any time checking more thermo-electric generation sheet
Change.
Brief description of the drawings
Fig. 1 is the theory diagram of high-power IGBT device electric energy recovery heat abstractor in example.
Fig. 2 is apparatus structure schematic diagram in present example（With the structure example on single fin）.
Fig. 3 is the single fin semiconductor-on-insulator electrothermal module of device and water cooled pipeline partial schematic diagram in present example.
Embodiment
In order that the present invention is more clearly understood, below with reference to accompanying drawing, the preferred embodiments of the present invention are carried out detailed
Description.It should be appreciated that preferred embodiment is only for the explanation present invention, the protection domain being not intended to be limiting of the invention.
A kind of high-power IGBT device electric energy of this example reclaims heat abstractor, including high-power IGBT device, fin,
Semiconductor thermoelectric module, mu balanced circuit, battery and water cooled pipeline.The present apparatus is by the voltage stabilizing after some semiconductor thermoelectric modules
Circuit output end series and parallel, to ensure finally to export sufficient amount electrical power.
It is as shown in Figure 1 the theory diagram of the present invention, fin 4 is fixed together by buckle 6 with thermo-electric generation sheet 2,
Semiconductor thermoelectric module realizes heat to electricity conversion using thermo-electric generation principle and is connected with fin 3, mu balanced circuit input and half
The electric energy output end connection of conductor electrothermal module, circuit output end of pressure-stabilizing connection battery realizes that electric energy is reclaimed and radiating.
This example reclaims the part that high-power IGBT used heat produces electric energy, as shown in Fig. 2 fin 3 is arranged on into big work(
In rate IGBT device 1, two sides of each fin 4 are solid by buckle 6 according to fin 4 and the size of thermo-electric generation sheet 2
Surely upper correct amount thermo-electric generation sheet 2 so that the heat that fin 4 is distributed can be fully by sorption enhanced.Fig. 2 is one embodiment
Schematic diagram, represent that the thermo-electric generation sheet 2 both sides of each fin 4 put by four pieces by sphere of movements for the elephants shape is fully covered.Tradition
Fin spacing of fin the width calculation of the thickness of thermo-electric generation sheet 2 and water cooled pipeline is not entered, while traditional
Heat abstractor do not account for heat energy being converted into electric energy by thermo-electric generation sheet 2 yet, and the design considers thermo-electric generation sheet 2
Thickness and water cooled pipeline width, produce enough thermo-electric generation effect.Semiconductor thermoelectric module is former using thermo-electric generation
Reason realizes after heat to electricity conversion that the electric energy output end and mu balanced circuit input of semiconductor thermoelectric module are connected, then are partly led some
Circuit output end of pressure-stabilizing series and parallel after body electrothermal module, reconnects battery or supply other equipment, can be standby as accident
With power supply, illumination etc. is provided for high-voltage convertor station.
As shown in figure 3, thermo-electric generation sheet 2 and fin 4 are tightly secured in together by buckle 6, it is ensured that fin 4 and the temperature difference
Heat between generating piece 2 fully conducts, while buckle 6 is detachable, is conveniently replaceable generating piece.Each piece of each point of the both sides of fin 4
One water cooled pipeline of cloth, every water cooled pipeline is attached pipeline 9, outlet conduit 8 and constituted by inlet channel 7, rectangle, and the rectangle is attached
Pipeline 9 is close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece 2 using vertical serpentine rings around mode, protects the cold and hot two sides of thermo-electric generation sheet 2
Enough temperature differences are held, to improve generating efficiency.
Further analyze the operation principle and designing points of the present invention.
1st, the scientific reasonability of the spacing of fin：
（1）According to the requirement of thermo-electric generation sheet in semiconductor thermoelectric module, must have on the two sides of each plate thermo-electric generation piece
Certain temperature difference could produce certain voltage.And the spacing of fin of traditional fin is not by the thickness of thermo-electric generation sheet
The width calculation of degree and water cooled pipeline is entered, while traditional heat abstractor does not account for heat energy passing through thermo-electric generation sheet yet
Electric energy is converted into, therefore the design needs to consider the thickness of thermo-electric generation sheet and the width of water cooled pipeline, produces enough temperature difference
Generating effect.
（2）In order to reach higher generating efficiency, the fin both side surface overwhelming majority of fin should be made to be sent out by the temperature difference
Electric piece covering, reduces exposed surface area as far as possible.
2nd, the function of buckle：
（1）Thermo-electric generation sheet in semiconductor thermoelectric module is fixed by snap on the fin of fin, and buckle has good
Good heat-proof quality, and can dismantle, in order to change thermo-electric generation sheet.
（2）The good heat-proof quality of buckle is to prevent that generating piece the two poles of the earth temperature difference not enough influences caused by buckle heat conduction
Generating efficiency.
In summary：A kind of high-power IGBT device electric energy that the present invention is provided reclaims heat abstractor, can be applied to high pressure
Current conversion station etc. needs to use high-power IGBT occasion, both can monitor IGBT working in real time, while providing one again
Determine the station electricity consumption of power, the effect that very good energy recovery is utilized can be played.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the general of the art
For logical technical staff, technical scheme is modified or equivalent substitution, without departure from the protection model of the present invention
Enclose.
Claims (5)
1. high-power IGBT device electric energy reclaims heat abstractor, it is characterised in that including high-power IGBT device, fin, partly lead
Body electrothermal module, mu balanced circuit, battery and water cooled pipeline, the fin are arranged on high-power IGBT device, fin
Fin and the thermo-electric generation sheet of semiconductor thermoelectric module be fixed together, semiconductor thermoelectric module is real using thermo-electric generation principle
Existing heat to electricity conversion, voltage output end and mu balanced circuit the input connection of semiconductor thermoelectric module, by some semiconductor thermoelectric moulds
Circuit output end of pressure-stabilizing series and parallel after block, reconnects battery or other electrical equipments.
2. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the fin
Including a base and some fins, spacing of fin is according to the thickness of thermo-electric generation sheet and the width design of water cooled pipeline.
3. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the semiconductor
Electrothermal module is made up of some pieces of thermo-electric generation sheets, and the hot face of thermo-electric generation sheet is directly attached on fin, and the two of each fin
There is thermo-electric generation sheet attaching side.
4. high-power IGBT device electric energy according to claim 1 reclaims heat abstractor, it is characterised in that the water cooling tube
Road is attached pipeline, outlet conduit and constituted by inlet channel, rectangle, and the rectangle of the water cooled pipeline attaches pipeline and uses vertical serpentine rings
It is close to the huyashi-chuuka (cold chinese-style noodles) of every plate thermo-electric generation piece around mode, makes huyashi-chuuka (cold chinese-style noodles) and the enough temperature differences in hot face.
5. the high-power IGBT device electric energy according to claim 1 and claim 3 reclaims heat abstractor, it is characterised in that
Thermo-electric generation sheet in the semiconductor thermoelectric module is fixed by snap on the fin of fin, and buckle has thermal insulation
Energy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710268378.3A CN106972783A (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710268378.3A CN106972783A (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106972783A true CN106972783A (en) | 2017-07-21 |
Family
ID=59333908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710268378.3A Pending CN106972783A (en) | 2017-04-22 | 2017-04-22 | High-power IGBT device electric energy reclaims heat abstractor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106972783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970818A (en) * | 2019-12-27 | 2020-04-07 | 广东电网有限责任公司电力科学研究院 | Electric energy quality control device |
| CN111509827A (en) * | 2020-05-29 | 2020-08-07 | 广东工业大学 | Charging device for low-power-consumption peripheral |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101267014A (en) * | 2007-03-12 | 2008-09-17 | 五邑大学 | A temperature difference semiconductor module with cooling and heating and temperature difference power generation function |
| US20110214707A1 (en) * | 2010-03-08 | 2011-09-08 | Fujitsu Limited | Thermoelectric generator |
| JP2014075555A (en) * | 2012-10-05 | 2014-04-24 | Hitachi Chemical Co Ltd | Thermoelectric conversion power generator |
| CN104638982A (en) * | 2015-03-05 | 2015-05-20 | 广州威能机电有限公司 | Thermoelectric generator |
| KR20160081425A (en) * | 2014-12-31 | 2016-07-08 | 재단법인대구경북과학기술원 | Solar heat collector type thermoelecric generation apparatus |
| CN206698149U (en) * | 2017-04-22 | 2017-12-01 | 华南理工大学 | High-power IGBT device electric energy reclaims heat abstractor |
-
2017
- 2017-04-22 CN CN201710268378.3A patent/CN106972783A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101267014A (en) * | 2007-03-12 | 2008-09-17 | 五邑大学 | A temperature difference semiconductor module with cooling and heating and temperature difference power generation function |
| US20110214707A1 (en) * | 2010-03-08 | 2011-09-08 | Fujitsu Limited | Thermoelectric generator |
| JP2014075555A (en) * | 2012-10-05 | 2014-04-24 | Hitachi Chemical Co Ltd | Thermoelectric conversion power generator |
| KR20160081425A (en) * | 2014-12-31 | 2016-07-08 | 재단법인대구경북과학기술원 | Solar heat collector type thermoelecric generation apparatus |
| CN104638982A (en) * | 2015-03-05 | 2015-05-20 | 广州威能机电有限公司 | Thermoelectric generator |
| CN206698149U (en) * | 2017-04-22 | 2017-12-01 | 华南理工大学 | High-power IGBT device electric energy reclaims heat abstractor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970818A (en) * | 2019-12-27 | 2020-04-07 | 广东电网有限责任公司电力科学研究院 | Electric energy quality control device |
| CN111509827A (en) * | 2020-05-29 | 2020-08-07 | 广东工业大学 | Charging device for low-power-consumption peripheral |
| CN111509827B (en) * | 2020-05-29 | 2022-02-15 | 广东工业大学 | Charging device for low-power-consumption peripheral |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206698149U (en) | High-power IGBT device electric energy reclaims heat abstractor | |
| CN206100754U (en) | Heat -dissipation system for whole unit of large -power inverter | |
| CN203734617U (en) | Natural flow-type solar energy comprehensive utilization device | |
| CN201739025U (en) | Waste heat generating set of automobile | |
| CN204290782U (en) | The high power Multipurpose thermal electric device of rectilinear or horizontal | |
| CN203747724U (en) | Natural flowing type photovoltaic-photothermal-thermoelectric power generation comprehensive utilization device | |
| CN106972783A (en) | High-power IGBT device electric energy reclaims heat abstractor | |
| JP2007019260A (en) | Thermoelectric conversion system | |
| CN207149660U (en) | Heat abstractor and power-supply system | |
| CN203368358U (en) | Plateau-type distributed photovoltaic grid-connected inverter | |
| CN108874082A (en) | A kind of computer cabinet inside waste heat recovery plant | |
| CN101499746A (en) | Plate type semiconductor thermo-electric generation apparatus | |
| CN104779838A (en) | Automobile cooling liquid waste heat recycling device | |
| CN204156756U (en) | A kind of new micro thermoelectric generator device | |
| CN207283424U (en) | A kind of high power density IGBT water-cooling modules | |
| CN206835012U (en) | A kind of automobile engine residual heat TRT | |
| CN205847193U (en) | A kind of solar photovoltaic generation system power supply | |
| CN111174603B (en) | Energy-saving air cooler cooling system | |
| CN207652329U (en) | A kind of water-cooled photovoltaic DC-to-AC converter | |
| CN203012616U (en) | Heat-dissipating electricity-saving device of notebook computer | |
| CN106301008B (en) | A kind of water-cooling frequency converter rectification module structure | |
| CN202421373U (en) | Test device for temperature rise of high-voltage direct-current transmission converter valve assembly | |
| CN216345388U (en) | LNG temperature difference power generation vaporizer | |
| CN111224580A (en) | Array type direct-current power supply based on thermoelectric power generation | |
| TWI830943B (en) | Charging module for electric vehicle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |