CN206595965U - A kind of sense amp circuit with electromagnetic interference rejection ability - Google Patents

A kind of sense amp circuit with electromagnetic interference rejection ability Download PDF

Info

Publication number
CN206595965U
CN206595965U CN201720198251.4U CN201720198251U CN206595965U CN 206595965 U CN206595965 U CN 206595965U CN 201720198251 U CN201720198251 U CN 201720198251U CN 206595965 U CN206595965 U CN 206595965U
Authority
CN
China
Prior art keywords
amplifier
integrated circuit
detection module
light detection
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201720198251.4U
Other languages
Chinese (zh)
Inventor
张小磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hubei free trade area east core technology Co., Ltd.
Original Assignee
Wuhan Elephant Creative Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Elephant Creative Technology Ltd filed Critical Wuhan Elephant Creative Technology Ltd
Priority to CN201720198251.4U priority Critical patent/CN206595965U/en
Application granted granted Critical
Publication of CN206595965U publication Critical patent/CN206595965U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Amplifiers (AREA)

Abstract

The utility model discloses a kind of sense amp circuit with electromagnetic interference rejection ability, including light detection module and amplifier integrated circuit, the smooth detection module includes photodiode, the output pin of light detection module and the first loop antenna, wherein the quantity of the output pin of light detection module is two, and output pin of the photodiode respectively with two light detection modules is connected, the amplifier integrated circuit includes the input pin of amplifier integrated circuit, electric capacity, transistor, second loop antenna and amplifier output pin, wherein the quantity of the input pin of amplifier integrated circuit is two, and the input pin of amplifier integrated circuit is corresponding with the output pin of light detection module, two bonding lines are connected between the output pin of light detection module and the input pin of amplifier integrated circuit, and two bonding lines intersect setting.The utility model is reasonable in design, effectively suppression electromagnetic interference, and will not increase hardware cost and volume.

Description

A kind of sense amp circuit with electromagnetic interference rejection ability
Technical field
The utility model is related to electromagnetic signal perturbation technique field, more particularly to a kind of with electromagnetic interference rejection ability Sense amp circuit.
Background technology
Optical receiver module receives the light data transmission signal of (GHz) at a high speed by the optical fiber known to industry.At these Generally there is a photo-detector by the electric signal transmission being coupled out to amplifying circuit in optical receiver module, process is:Optical fiber will Optical signal is found on photo-detector, and then photo-detector response produces photoelectric current, and amplifying circuit amplifies these current signals.
In the application for receiving sensor, the electromagnetic interference problem of transducing signal is generally faced.This electromagnetic interference is asked Topic is due to the signal produced by sensor, the signal of sensor amplification, and the signal on circuit, these signal amplitudes difference It is too big caused.For example, generally in microampere to the photoelectric current between milliampere produced by photodiode.However, across resistance amplification The signal of photodiode is converted into amplitude in 0.25-5V even more big voltage signals by device or other change-over circuits.This Individual voltage signal terminates 50-Ohm resistance, and 5-100mA circulation is produced in the place of closely photodiode.This circulation Produce a very big interference signal.Therefore, this interference signal must be reduced.It is as shown in Figure 1 current existing skill In art, the layout of photodiode and corresponding amplifying circuit, this layout electromagnetic interference described before just having.
Fig. 1 is the schematic diagram that a photodiode is connected to an amplifier integrated circuit.Photo-detector shown in Fig. 1 It is made up of photodiode and two photo-detector output pins.Photodiode is connected to photo-detector output pin, because This electric current for working as produced by photodiode receives light stimulus has been flowed on these output pins.
Input of the amplifier integrated circuit by connecting photo-detector module output pin and amplifier integrated circuit is drawn The bonding line response light detector module of pin.In the example depicted in figure 1, the amplifier integrated circuit that signal is input to is by one Transistor and an electric capacity are represented.Amplifier integrated circuit is exported result to late-class circuit by amplifier output pin.Put The amplifier that big device integrated circuit is included may be considered one kind in art.A kind of application therein, can be with The photo-signal that photodetector is provided is converted into the convenient electric signal handled by late-class circuit using trans-impedance amplifier.
It is illustrated in figure 2 in currently existing technology, a kind of photodiode comprising Fig. 1 circuit theory diagrams-amplifier electricity The layout block diagram on road.In fig. 2, photo-detector module includes a photodiode, the connected light inspection of photodiode connection Survey the bonding line of module output pin and amplifier integrated circuit input pin.
Fig. 3 is shown in currently existing technology, and a kind of photodiode-amplifier connects the emulation three-dimensional view angle of circuit. In figure 3, photo-detector module includes a photodiode, the connected light detection module output pin of photodiode connection And the bonding line of amplifier integrated circuit input pin.Amplifier integrated circuit can be a kind of knot in art Structure, structure for example before described by Fig. 1.
Although in photodiode in the prior art, as Figure 1-3-amplifier connection circuit, can effectively by The photoelectricity that photodiode is produced is streamed in amplifier integrated circuit.But so processing is not optimal, because these Circuit is to amplifier output signal, and the optical detector module that is included of system and its produced by amplifier integrated circuit His interference of signal is very sensitive.Sensitivity to interference signal can be found out by Fig. 1 before.When light detects mould When block is connected to amplifier integrated circuit by two parallel bonding lines, high Q RF loops will be formed, connect Ru same Receive antenna.Shown in the dotted line of this loop in Fig. 1.This loop antenna is output to input coupling to amplifier integrated circuit Close, and cause the unstable interference of the distorted signals and device of whole system, it is very sensitive.In other words, by amplifier Signal passes through the change of electromagnetic field caused by loop antenna device in output or system, will produce the ring of an interference photoelectric current Road electric current, this interference electric current is produced by pipe detection module, and will cause systematic distortion and unstable.
There is research to be directed to reducing the interference sensitlzing effect of high Q RF loops as shown in Figure 1 before.One kind side therein Formula is as shown in Figure 4.Fig. 4 is the three end light detection module circuit theory diagrams for being connected to amplifier integrated circuit.Fig. 4 light inspection Module is surveyed to be made up of 3 short photodiodes and 3 light detection module output pins.
Amplifier integrated circuit is by connecting the input pin of light detection module output pin and amplifier integrated circuit Bonding line, response light detection module.In the example in fig. 4, amplifier integrated circuit is by a transistor and an electric capacity, by In the connection in photodiode-amplifier circuit, by introduce two pairs of loops in opposite direction come reduce be output to input, And the influence that other in system are disturbed, therefore Fig. 4 structure is better than Fig. 1.The two loops are by 3 end photodiodes, key Zygonema, and amplifier integrated circuit composition.Loop composition in similar two Fig. 1 of the two loops.However, due to the two Loop disturbing effect is cancelled out each other, and experimentally the interference suppressioning effect of the two loops is better than the circuit shown in Fig. 1.More Specifically, because one of loop is close, and almost similar in appearance to produced by another loop, therefore a loop Electromagnetic field change will be offset by another loop.This structure naturally has the special feature that one of loop is produced Change produced by the change of raw electromagnetic field, with another loop is close consistent in amplitude, but in the opposite direction. Due to cancelling out each other for two interference electric currents, therefore to be transferred to amplifier integrated for the signal code only produced by photodiode In circuit.
Although on to inside and outside interference, Fig. 4 structure is better than Fig. 1, and it lacks advantage in cost. Fig. 4 circuit needs 3 higher end photodiodes of cost, and needs extra input and output pin, and extra Bonding line.In addition, Fig. 4 structure needs additional space cost compared to Fig. 1.All controlled in a system cost and space Obtain under very strict environment, Fig. 4 scheme is unacceptable.
Therefore, one kind is needed to improve electromagnetic interference problem at present, while avoid increasing cost and pin number again Solution.
Utility model content
The purpose of this utility model is that, in order to solve shortcoming present in prior art, and the one kind proposed is dry with electromagnetism Disturb the sense amp circuit of rejection ability.
To achieve these goals, the utility model employs following technical scheme:
A kind of sense amp circuit with electromagnetic interference rejection ability, including light detection module and the integrated electricity of amplifier Road, the smooth detection module includes photodiode, the output pin of light detection module and the first loop antenna, and wherein light is detected The quantity of the output pin of module is two, and output pin of the photodiode respectively with two light detection modules is connected, institute Stating amplifier integrated circuit includes input pin, electric capacity, transistor, the second loop antenna and the amplifier of amplifier integrated circuit The quantity of the input pin of output pin, wherein amplifier integrated circuit is two, and the input pin of amplifier integrated circuit Output pin with light detection module is corresponding, the output pin of light detection module and the input pin of amplifier integrated circuit it Between be connected with two bonding lines, and two bonding lines intersect setting, the input pin of one of amplifier integrated circuit It is connected with one end of electric capacity, the other end of electric capacity and the emitter stage of transistor are connected, the base stage of transistor and another amplifier The input pin connection of integrated circuit, amplifier output pin is connected with late-class circuit.
It is preferred that, the smooth detection module is photo-detector.
It is preferred that, the opposite in phase of first loop antenna and the second loop antenna.
It is preferred that, insulating barrier is provided between the bonding line, and insulating barrier is silica, polytetrafluoroethylene (PTFE), glass, cunning Stone, plastics or glass fibre are made.
In the utility model, a kind of sense amp circuit with electromagnetic interference rejection ability is using intersection bonding line Structure, change electromagnetic field using loop antenna and loop antenna, and then cause the change of photoamplifier electric current, coordinate and intersect Loop caused by the bonding line of formula is in opposite direction so that the two interference electric currents are cancelled out each other, effectively suppression electromagnetic interference, and Hardware cost and volume will not be increased, reduce feedback and be output to the influence of input, significantly, the utility model designs cloth to effect Office is reasonable, easy to use, effectively suppression electromagnetic interference, and will not increase hardware cost and volume.
Brief description of the drawings
Fig. 1 is the connection circuit theory diagrams of light detection module and amplifier integrated circuit in the prior art;
The layout that Fig. 2 connects for photodiode in the prior art-amplifier circuit;
The emulation 3-D view that Fig. 3 connects for photodiode in the prior art-amplifier circuit;
Fig. 4 connects the circuit theory diagrams of amplifier integrated circuit for three end Photoelectric Detection modules in the prior art;
Fig. 5 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability in embodiment one Using intersect bonding line Photoelectric Detection module and amplifier integrated circuit catenation principle figure;
Fig. 6 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability in embodiment one The corresponding layout block diagram of use cross key wire structure circuit;
Fig. 7 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability in embodiment one Be used for suppress interference cross key wire structure circuit corresponding to three-dimensional software mimetic view;
Fig. 8 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability in embodiment two By intersect bonding line connect three end light detection modules and amplifier integrated circuit circuit theory diagrams;
Fig. 9 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability generation sense The method of amplified signal AF panel;
Figure 10 be the utility model proposes a kind of sense amp circuit with electromagnetic interference rejection ability manufacture have There is the method flow diagram of the sense amp circuit of electromagnetic interference rejection ability.
In figure:510 smooth detection modules, 520 photodiodes, the output pin of 530 smooth detection modules, 540 bonding lines, 550 amplifier integrated circuits, the input pin of 560 amplifier integrated circuits, 565 electric capacity, 570 transistors, the output of 580 amplifiers Pin, 590 first loop antennas, 595 second loop antennas.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole Embodiment.
Embodiment one
Reference picture 5,6,7,9,10, a kind of sense amp circuit with electromagnetic interference rejection ability, including light detection mould Block 510 and amplifier integrated circuit 550, light detection module 510 include photodiode 520, the output pin of light detection module 530 and first loop antenna 590, wherein the quantity of the output pin 530 of light detection module is two, and photodiode 520 It is connected respectively with the output pin 530 of two light detection modules, amplifier integrated circuit 550 includes the defeated of amplifier integrated circuit Enter pin 560, electric capacity 565, transistor 570, the second loop antenna 595 and amplifier output pin 580, wherein amplifier is integrated The quantity of the input pin 560 of circuit is two, and the output of the input pin 560 and light detection module of amplifier integrated circuit Pin 530 is corresponding, is connected between the output pin 530 of light detection module and the input pin 560 of amplifier integrated circuit Two bonding lines 540, and two bonding lines 540 intersect setting, the input pin 560 of one of amplifier integrated circuit Be connected with one end of electric capacity 565, the other end of electric capacity 565 is connected with the emitter stage of transistor 570, the base stage of transistor 570 with The input pin 560 of another amplifier integrated circuit is connected, and amplifier output pin 580 is connected with late-class circuit.
In the utility model, light detection module 510 is photo-detector, the first loop antenna 590 and the second loop antenna 595 Opposite in phase, insulating barrier is provided between bonding line 540, and insulating barrier is silica, polytetrafluoroethylene (PTFE), glass, talcum, modeling Material or glass fibre are made;Amplifier integrated circuit 550 is connected to when light detection module 510 intersects bonding line 540 by two When middle, set up similar to the two high Q RF loops of reception antenna.The two loop antennas 590 and 595 will change electromagnetic field, because This will cause the change of photoamplifier electric current.Due to position very close to, photodiode caused by the two loop antennas- The change of amplifier circuit electric current, close to equal in amplitude.Also, loop is in opposite direction caused by intersecting bonding line, Naturally the change of photodiode-amplifier circuit electric current caused by the two upper loop antennas is in opposite direction.The two are done Disturb electric current to cancel out each other, therefore improve electromagnetic interference, in photodiode-amplifying circuit only have photodiode produced by Electric current be amplified;The utility model is changed using the structure for intersecting bonding line using loop antenna 590 and loop antenna 595 Electromagnetic Field, and then cause the change of photoamplifier electric current, coordinate loop caused by the bonding line of staggered form in the opposite direction, to make Obtain the two interference electric currents to cancel out each other, effectively suppression electromagnetic interference, and hardware cost and volume will not be increased, reduce feedback And the influence of input is output to, significantly, the utility model layout is rationally, easy to use, effectively suppresses electromagnetism for effect Interference, and hardware cost and volume will not be increased.
Embodiment two
There is a kind of reference picture 8, sense amp circuit with electromagnetic interference rejection ability, one kind electromagnetic interference to suppress energy The sense amp circuit of power, including light detection module 510 and amplifier integrated circuit 550, light detection module 510 include three end light The loop antenna 590 of output pin 530 and first of electric diode 520, the light detection module at three ends, wherein three end photodiodes 520 are connected with the output pin 530 of the light detection module at three ends, and amplifier integrated circuit 550 includes amplifier integrated circuit Input pin 560, electric capacity 565, transistor 570, the second loop antenna 595 and amplifier output pin 580, wherein amplifier collection Quantity into the input pin 560 of circuit is three, and input pin 560 and the light detection module of amplifier integrated circuit is defeated Go out that pin 530 is corresponding, the output pin 530 of two of which light detection module and two amplifiers being wherein correspondingly arranged are integrated It is connected with two bonding lines 540 between the input pin 560 of circuit, and two bonding lines 540 intersect setting, one of them The input pin 560 of amplifier integrated circuit is connected with one end of electric capacity 565, the other end of electric capacity 565 and the hair of transistor 570 Emitter-base bandgap grading is connected, and the base stage of transistor 570 is connected with the input pin 560 of another amplifier integrated circuit, and amplifier output is drawn Pin 580 is connected with late-class circuit.
In the utility model, light detection module 510 is photo-detector, the first loop antenna 590 and the second loop antenna 595 Opposite in phase, insulating barrier is provided between bonding line 540, and insulating barrier is silica, polytetrafluoroethylene (PTFE), glass, talcum, modeling Material or glass fibre are made;Intersecting bonding line can equally be used in the structure of three end photodiode 520, to produce similar figure 4 two positions are close, equivalent loop 590 and 595 in opposite direction.Therefore it may also used to reduce electromagnetic interference.Such as Fig. 8 It is shown, only produce the opposite loop of both direction due to intersecting bonding line, it is not necessary to Article 3 bonding line, therefore also without making With the 3rd input pin 560 of amplifier circuit.So in circuit design, the 3rd input pin of amplifier circuit 560 can remove, so as to reduce number of pins and hardware cost.
It is described above, only the utility model preferably embodiment, but protection domain of the present utility model is not This is confined to, any one skilled in the art is in the technical scope that the utility model is disclosed, according to this practicality New technical scheme and its utility model design are subject to equivalent substitution or change, should all cover in protection model of the present utility model Within enclosing.

Claims (4)

1. a kind of sense amp circuit with electromagnetic interference rejection ability, including light detection module (510) and amplifier it is integrated Circuit (550), it is characterised in that the smooth detection module (510) includes photodiode (520), the output of light detection module The quantity of the output pin (530) of pin (530) and the first loop antenna (590), wherein light detection module is two, and photoelectricity Diode (520) is connected with the output pin (530) of two light detection modules respectively, amplifier integrated circuit (550) bag Include input pin (560), electric capacity (565), transistor (570), the second loop antenna (595) and the amplification of amplifier integrated circuit The quantity of the input pin (560) of device output pin (580), wherein amplifier integrated circuit is two, and the integrated electricity of amplifier The input pin (560) on road is corresponding with the output pin (530) of light detection module, the output pin (530) of light detection module Two bonding lines (540), and two bonding line (540) phases are connected between the input pin (560) of amplifier integrated circuit Mutually arranged in a crossed manner, the input pin (560) of one of amplifier integrated circuit is connected with one end of electric capacity (565), electric capacity (565) the other end is connected with the emitter stage of transistor (570), base stage and the integrated electricity of another amplifier of transistor (570) Input pin (560) connection on road, amplifier output pin (580) is connected with late-class circuit.
2. a kind of sense amp circuit with electromagnetic interference rejection ability according to claim 1, it is characterised in that institute Light detection module (510) is stated for photo-detector.
3. a kind of sense amp circuit with electromagnetic interference rejection ability according to claim 1, it is characterised in that institute State the opposite in phase of the first loop antenna (590) and the second loop antenna (595).
4. a kind of sense amp circuit with electromagnetic interference rejection ability according to claim 1, it is characterised in that institute State and insulating barrier is provided between bonding line (540), and insulating barrier is silica, polytetrafluoroethylene (PTFE), glass, talcum, plastics or glass Glass fiber is made.
CN201720198251.4U 2017-03-02 2017-03-02 A kind of sense amp circuit with electromagnetic interference rejection ability Expired - Fee Related CN206595965U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720198251.4U CN206595965U (en) 2017-03-02 2017-03-02 A kind of sense amp circuit with electromagnetic interference rejection ability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720198251.4U CN206595965U (en) 2017-03-02 2017-03-02 A kind of sense amp circuit with electromagnetic interference rejection ability

Publications (1)

Publication Number Publication Date
CN206595965U true CN206595965U (en) 2017-10-27

Family

ID=60126314

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720198251.4U Expired - Fee Related CN206595965U (en) 2017-03-02 2017-03-02 A kind of sense amp circuit with electromagnetic interference rejection ability

Country Status (1)

Country Link
CN (1) CN206595965U (en)

Similar Documents

Publication Publication Date Title
Lee et al. An equivalent circuit model for a Ge waveguide photodetector on Si
CN105302286A (en) Light Sensing Device and Method of Arranging Light Sensing Element Thereof
US20090189059A1 (en) Systems and methods for cross-over bond-wires for tia input
CN206595965U (en) A kind of sense amp circuit with electromagnetic interference rejection ability
CN106404154A (en) Optical fiber acoustic wave detection system
CN106656057A (en) Sensing amplifying circuit with electromagnetic interference and inhibiting capacity and manufacturing method for same
CN205940760U (en) Terahertz detection device
CN209069558U (en) Detector responsivity test device based on TO CAN encapsulation
US6175438B1 (en) Differential optical signal receiver
US10594400B2 (en) Free space optical communication-enabled textile assembly
CN106341088B (en) Galvo-preamplifier, time resolution reading circuit and time resolved detection device
CN109596899A (en) Dynamic response electromagnetic radiation intensity detection device based on flexible textile fabric
Chiu et al. GaAs-based, 1.55 um High Speed, High Saturation power, Low-Temperature Grown GaAs Pin Photodetector
Lee et al. An 8.5 Gb/s CMOS OEIC with on-chip photodiode for short-distance optical communications
CN208125278U (en) A kind of pyroelectric infrared sensor
Khan et al. Photoresponse modeling and analysis of InGaP/GaAs double-HPTs
Youn et al. A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector
CN102759370B (en) Optical sensing system based on planer optical waveguide
Ramli et al. Optical wireless front-end receiver design
JPH07250035A (en) Optical receiver
CN110515490A (en) Signal processing circuit
CN204694779U (en) A kind of wearable electromagnetic radiation meter
US9350458B2 (en) Disturbance tolerant optical device
CN106549024A (en) A kind of traveling wave photodetector of integrated coupling polarization manipulation
CN209216071U (en) Hollow circuit block infrared touch display

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: 430000 1845, room 18, block A, overseas talent building, 999 high tech Avenue, East Lake New Technology Development Zone, Wuhan, Hubei.

Patentee after: Hubei free trade area east core technology Co., Ltd.

Address before: 430000 8-203-029 (Y), Guan Nan Fu Xing medical park, 58 Optics Valley Road, East Lake New Technology Development Zone, Wuhan, Hubei.

Patentee before: Wuhan elephant Creative Technology Limited

CP03 Change of name, title or address
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171027

Termination date: 20200302

CF01 Termination of patent right due to non-payment of annual fee