CN106549024A - A kind of traveling wave photodetector of integrated coupling polarization manipulation - Google Patents
A kind of traveling wave photodetector of integrated coupling polarization manipulation Download PDFInfo
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- CN106549024A CN106549024A CN201610959639.1A CN201610959639A CN106549024A CN 106549024 A CN106549024 A CN 106549024A CN 201610959639 A CN201610959639 A CN 201610959639A CN 106549024 A CN106549024 A CN 106549024A
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- 230000010287 polarization Effects 0.000 title claims abstract description 46
- 238000010168 coupling process Methods 0.000 title claims abstract description 30
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 30
- 230000008878 coupling Effects 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 71
- 230000005540 biological transmission Effects 0.000 claims abstract description 35
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 description 14
- 230000005622 photoelectricity Effects 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 230000004043 responsiveness Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
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- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Abstract
The present invention relates to a kind of traveling wave photodetector of integrated coupling polarization manipulation, at least include a Component units, described each Component units include radio-frequency transmission line, the photo detecting unit for being carried in radio-frequency transmission line both sides respectively, two one end passive optical waveguides being connected with each other, the passive two-dimensional grating for being opened in two passive optical waveguide junctions, and wherein radio-frequency transmission line is connected with the outfan of photo detecting unit；Passive optical waveguide is used to provide optical signal for the photo detecting unit of radio-frequency transmission line both sides.
Description
Technical field
The present invention relates to field of photodetectors, more particularly, to a kind of traveling wave photoelectricity of integrated coupling polarization manipulation
Detector.
Background technology
In photoelectric communication link, opto-electronic conversion of the optical signal by photodetector realizes the demodulation of rf signal.Pass
The face incidence photodetector of system, due to the dual restriction that there is carrier transit response and the response of circuit relaxation so that photoelectricity
The bandwidth parameter and responsiveness parameter of detector can not optimize simultaneously, and the bandwidth efficiency product index of detector is restricted.For solution
The deficiency of the bandwidth efficiency product that certainly traditional face incidence photodetector faces, can adopt the design side of traveling-wave structure photo-detector
Case, on the premise of the carrier responsive bandwidth of device is not sacrificed, optimizes from the radio circuit angle of photodetector.Pass through
Radio-frequency transmission line disperses the capacitive relaxation of p-i-n photo detecting units, alleviates the overall RC high frequencies of equivalent circuit and blocks so that OK
The overall bandwidth of wave detector is not limited by electric capacity.It is simultaneously distributed in parallel using multiple detectors, by passive optical waveguide
Conveying optical signal, increases the optical signal absorption of device from cumulative angle, increases the responsiveness index of detector so that this
Plant the overall bandwidth efficiency product of distributed traveling wave photodetector and potentiality are had more than traditional face incidence detector, in broadband Large Copacity
The Microwave photonics field such as light carrier radio communication there is good competitiveness and application prospect.
However, the application of distributed traveling wave photodetector specific surface incidence photodetector has higher optical coupling to want
Ask.Due to the waveguide Integrated Trait of traveling-wave structure photodetector, optical signal needs efficient coupling ability through fiber-optic transfer
Into waveguide, and finally absorbed by photo detecting unit, realize opto-electronic conversion.And optical signal is through the long range propagation of optical fiber
Afterwards, its polarization information can occur random fluctuation, and the direct-coupling without Polarization Control, one side coupling efficiency are low, cause device
The responsiveness of part is relatively low；On the other hand the transmission of the unexpected patterns such as transverse magnetic mould TM moulds can be excited, the photoelectricity of device is destroyed
Velocity Matching Conditions, cause bandwidth of a device serious degradation, therefore, the polarization to optical fiber input optical signal is needed using end coupling
State is strictly controlled；Grating may also be employed carry out the vertical coupled mode in surface replacing end coupling, but due to grating
Diffraction to the Polarization-Sensitive of incident illumination, the polarization state of optical signal to the coupling of optical signal, waveguide, absorb and photoelectricity turns
Change with large effect, and final responsiveness to device application, signal to noise ratio and channel width etc. produce considerable influence.For solution
The polarization selectivity problem combined with optical fiber by certainly traditional traveling wave photodetector, frequently with preposition Polarization Controller, polarization mode
The method such as transducer or polarization maintaining optical fibre, it is to avoid traveling detector response caused by the change of fiber middle light signal polarization state becomes
Change, it is ensured that the efficient stable of communications.But by the way of Polarization Controller or polarization maintaining optical fibre, cause photoelectricity link complicated
Change, hardware cost is consequently increased, routine use and maintenance also become difficult.
The content of the invention
An a kind of difficult problem of the present invention for solution above prior art, there is provided traveling wave light electrical resistivity survey of integrated coupling polarization manipulation
Device is surveyed, the detector can realize the coupling polarization manipulation to optical signal, compared with prior art, its photoelectricity link simplifies, drop
Low hardware is built and maintenance cost, with larger market potential.
To realize above goal of the invention, the technical scheme of employing is：
A kind of traveling wave photodetector of integrated coupling polarization manipulation, at least including a Component units, described each composition is single
It is passive that unit includes radio-frequency transmission line, be carried in radio-frequency transmission line both sides respectively photo detecting unit, two one end are connected with each other
Fiber waveguide, the passive two-dimensional grating for being opened in two passive optical waveguide junctions, wherein radio-frequency transmission line and photo detecting unit
Outfan connects；Passive optical waveguide is used to provide optical signal for the photo detecting unit of radio-frequency transmission line both sides.
Its specific operation principle is as follows：During optical signal is from standard single-mode fiber outgoing to passive two-dimensional grating, wherein hanging down
The optical signal of straight polarization is separated after passive two-dimensional grating, with transverse electric field mould（TE moulds）Form be coupled to it is corresponding,
In the passive optical waveguide of respective polarization direction, the optical signal of coupling is fed radio-frequency transmission line both sides by passive optical waveguide
Photo detecting unit, photo detecting unit are carried out opto-electronic conversion and obtain radiofrequency signal to optical signal, and radiofrequency signal is passed by radio frequency
Defeated line output.
In such scheme, optical signal is with transverse electric field mould（TE moulds）Form be coupled in corresponding waveguide, ensured light letter
Coupling efficiency in number from fiber coupling to passive optical waveguide, it is to avoid transverse magnetic mould（TM moulds）Etc. non-transmitting pattern or non-speed
Match pattern is excited, it is to avoid caused by loss responsiveness reduce and modal dispersion caused by bandwidth of a device degeneration
Deng improving the signal to noise ratio of photodetector.Simultaneously as being primary standard single mode coupled to the optical signal in two passive wave guides
The optical signal of orthogonal polarization state in optical fiber, then no matter in single-mode fiber, how the polarization information of optical signal is distributed, can be high
Effect is coupled to photo detecting unit and is absorbed, it is not necessary in advance the polarization state of incident optical signal is regulated and controled and is screened, can be real
The unrelated optical detection of polarization of existing single-mode fiber, simplifies the configuration of the device in photoelectricity link, hardware cost and debugging, safeguards into
This.
Preferably, the quantity of the Component units is 2 or more than 2.So that Component units quantity increases to 2 or 2
More than individual, photodetector can be enabled while 2 groups or the orthogonal optical signal of more than 2 groups polarization states are isolated
Come, and be converted into corresponding radiofrequency signal respectively to be exported, realize the opto-electronic conversion of integrated polarizing demultiplexing.
Preferably, the quantity of the photo detecting unit for being carried in radio-frequency transmission line both sides respectively is multiple, and multiple light are visited
Unit is surveyed in radio-frequency transmission line both sides periodic distribution；The outfan and radio frequency transmission of the photo detecting unit of radio-frequency transmission line both sides
Line connects.
Preferably, the n poles ground connection of the photo detecting unit, the letter of the outfan of photo detecting unit and the radio-frequency transmission line
Number electrode S connection.
Preferably, passive optical waveguide is made using silicon nitride material.Using silicon nitride material width window, low-loss, low color
Dissipate, refractive index is moderate, the advantage that processing tolerance is high so that photodetector is in the Microwave photonics such as light carrier radio communication field
With wide application prospect.
Preferably, the epitaxial structure of the photo detecting unit is made using indium phosphide semi-conducting material.Using indium phosphide
Advantage that the doping of base semiconductor material high carrier mobility, direct band gap and band gap is adjustable etc. so that photodetector is being passed
There is the advantage for being difficult to substitute in system C-band optic communication.
Preferably, the traveling wave photodetector is integrated in the chips, and the substrate of chip adopts indium phosphide.
Compared with prior art, the invention has the beneficial effects as follows：
The photodetector optical signal that the present invention is provided is with transverse electric field mould（TE moulds）Form be coupled in corresponding waveguide, protect
Coupling efficiency in having hindered optical signal from fiber coupling to passive optical waveguide, it is to avoid transverse magnetic mould（TM moulds）Etc. non-transmitting pattern
Or non-speeds match pattern is excited, it is to avoid caused by loss responsiveness reduce and modal dispersion caused by bandwidth of a device
Degeneration etc., improve the signal to noise ratio of photodetector.Simultaneously as being former mark coupled to the optical signal in two passive wave guides
The optical signal of orthogonal polarization state in quasi-monomode fiber, then no matter in single-mode fiber, how the polarization information of optical signal is distributed,
Efficient coupling is to photo detecting unit and is absorbed for energy, it is not necessary in advance the polarization state of incident optical signal is regulated and controled and is sieved
Choosing, is capable of achieving the unrelated optical detection of polarization of single-mode fiber, simplify device configuration in photoelectricity link, hardware cost and debugging,
Maintenance cost.
Description of the drawings
Structural representations of the Fig. 1 for the photoelectric sensor of embodiment 1.
Structural representations of the Fig. 2 for the photoelectric sensor of embodiment 2.
Fig. 3 carries out detached schematic diagram to optical signal for passive two-dimensional grating.
Specific embodiment
Accompanying drawing being for illustration only property explanation, it is impossible to be interpreted as the restriction to this patent；
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Embodiment 1
The structural representation of the photodetector that Fig. 1 is provided by the present embodiment, the photodetector of the present embodiment include one
Component units, described each Component units include radio-frequency transmission line 1, are carried in the photo detecting unit 2, two of transmission line both sides respectively
Passive optical waveguide 3 that bar one end is connected with each other, the passive two-dimensional grating 4 for being opened in two passive optical waveguide junctions, wherein penetrating
Frequency transmission line is connected with the outfan of photo detecting unit 2；Passive optical waveguide is used to provide optical signal for photo detecting unit.
Wherein, metallic RF transmission line 1 is from left to right followed successively by ground electrode G, signal electrode S, ground electrode G, ground electrode G,
Signal electrode S, ground electrode G constitute the electrode framework of traveling wave photo-detector（GSG）, signal electrode S and the light of radio-frequency transmission line 1 are visited
Survey the outfan connection of unit 2.In the present embodiment, photodetector is integrated in the chips, and its substrate 5 adopts InP substrate.
Its specific operation principle is as follows：During optical signal is from 9 outgoing of standard single-mode fiber to passive two-dimensional grating 4, wherein
The optical signal of vertical polarization is separated after passive two-dimensional grating 4, with transverse electric field mould（TE moulds）Form be coupled to correspondence
, in the passive optical waveguide 3 of respective polarization direction, the optical signal of coupling is fed the light of its side by passive optical waveguide 3
Probe unit 2, photo detecting unit 2 are carried out opto-electronic conversion and obtain radiofrequency signal to optical signal, and radiofrequency signal is passed by radio frequency
Defeated line 1 is exported.
Fig. 3 carries out detached schematic diagram to optical signal for passive two-dimensional grating 4, as shown in Fig. 2 in optical fiber 9 outgoing light
Signal has various polarization modes 6, and wherein the orthogonal two ways of optical signals of polarization state 7,8 is solved via passive two-dimensional grating 4 partially
Shake after multiplexing, respectively enterd in the form of TE moulds in corresponding, vertical with polarization direction passive optical waveguide 3.
In such scheme, optical signal is with transverse electric field mould（TE moulds）Form be coupled in corresponding passive optical waveguide 3, ensure
Optical signal from optical fiber 9 coupled to passive optical waveguide 3 in coupling efficiency, it is to avoid transverse magnetic mould（TM moulds）Etc. non-transmitting pattern
Or non-speeds match pattern is excited, it is to avoid caused by loss responsiveness reduce and modal dispersion caused by bandwidth of a device
Degeneration etc., improve the signal to noise ratio of photodetector.Simultaneously as coupled to the optical signal in two passive optical waveguides 3 being
The optical signal of orthogonal polarization state in primary standard single-mode fiber 9, the then polarization information regardless of optical signal in single-mode fiber 9
Efficient coupling is to photo detecting unit 2 and is absorbed for distribution, energy, it is not necessary in advance the polarization state of incident optical signal is regulated and controled
And screening, be capable of achieving the unrelated optical detection of polarization of single-mode fiber 9, simplify device configuration in photoelectricity link, hardware cost and
Debugging, maintenance cost.
In specific implementation process, the quantity of the photo detecting unit 2 for setting 1 both sides of radio-frequency transmission line respectively is many
Individual, multiple photo detecting units 2 are in 1 both sides periodic distribution of radio-frequency transmission line；The photo detecting unit 2 of 1 both sides of radio-frequency transmission line
Outfan is connected with radio-frequency transmission line 1.
In specific implementation process, passive optical waveguide 3 is made using silicon nitride material.Using silicon nitride material width window
Mouth, low-loss, low dispersion, the advantage that refractive index is moderate, processing tolerance is high so that photodetector is in light carrier radio communication etc.
Microwave photonics field has wide application prospect.
In specific implementation process, the epitaxial structure of the photo detecting unit 2 adopts indium phosphide semi-conducting material system
Into.Using indium phosphide semi-conducting material high carrier mobility, the direct band gap and band gap doping advantage such as adjustable so that light
Electric explorer has the advantage for being difficult to substitute in traditional C-band optic communication.
Embodiment 2
As shown in Fig. 2 the photoelectric sensor provided by the present embodiment includes two Component units, radio-frequency transmission line 1 from a left side to
The right side is followed successively by ground electrode G, signal electrode S1, ground electrode G, signal electrode S2, ground electrode G, ground electrode G, signal electrode S1, it is electric
Pole G, signal electrode S2, ground electrode G constitute the electrode framework of two traveling wave photo-detectors arranged side by side（GSGSG）；Signal electrode S1, letter
Number electrode S2 is connected with the outfan of the photo detecting unit 2 of two Component units respectively.The present embodiment causes Component units quantity
2 are increased to, photodetector can be enabled while 2 groups of polarization states orthogonal optical signal is separated, and point
It is not converted into corresponding radiofrequency signal to be exported, realizes the opto-electronic conversion of integrated polarizing demultiplexing.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no need to be exhaustive to all of embodiment.It is all this
Any modification, equivalent and improvement made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (7)
1. a kind of traveling wave photodetector of integrated coupling polarization manipulation, it is characterised in that：At least include a Component units, institute
Stating each Component units includes radio-frequency transmission line, the photo detecting unit for being carried in radio-frequency transmission line both sides respectively, two one end phases
The passive optical waveguide for connecting, the passive two-dimensional grating for being opened in two passive optical waveguide junctions, wherein radio-frequency transmission line with
The outfan connection of photo detecting unit；Passive optical waveguide is used to provide optical signal for the photo detecting unit of radio-frequency transmission line both sides.
2. the traveling wave photodetector of integrated coupling polarization manipulation according to claim 1, it is characterised in that：The composition
The quantity of unit is 2 or more than 2.
3. the traveling wave photodetector of integrated coupling polarization manipulation according to claim 2, it is characterised in that：The difference
The quantity for being carried in the photo detecting unit of radio-frequency transmission line both sides is multiple, and multiple photo detecting units are in radio-frequency transmission line both sides week
Phase property is distributed；The outfan of the photo detecting unit of radio-frequency transmission line both sides is connected with radio-frequency transmission line.
4. the traveling wave photodetector of integrated coupling polarization manipulation according to claim 1, it is characterised in that：The light is visited
The n poles ground connection of unit is surveyed, the outfan of photo detecting unit is connected with the signal electrode S of the radio-frequency transmission line.
5. the traveling wave photodetector of integrated coupling polarization manipulation according to claim 1, it is characterised in that：Passive light wave
Lead and made using silicon nitride material.
6. the traveling wave photodetector of integrated coupling polarization manipulation according to claim 1, it is characterised in that：The light is visited
The epitaxial structure for surveying unit is made using indium phosphide semi-conducting material.
7. the traveling wave photodetector of the integrated coupling polarization manipulation according to any one of claim 1 ~ 6, it is characterised in that：
The traveling wave photodetector is integrated in the chips, and the substrate of chip adopts indium phosphide.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112304906A (en) * | 2020-10-23 | 2021-02-02 | 重庆理工大学 | Dual-channel probe type 81-degree inclined fiber bragg grating sensor system and preparation method and application thereof |
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| US20060280405A1 (en) * | 2003-03-21 | 2006-12-14 | Gunn Iii Lawrence C | Polarization splitting grating couplers |
| CN102540505A (en) * | 2012-01-13 | 2012-07-04 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
| WO2013123294A2 (en) * | 2012-02-15 | 2013-08-22 | Cogo Optronics, Inc. | Mach-zehnder optical modulator using a balanced coplanar stripline with lateral ground planes |
| CN104330905A (en) * | 2014-11-12 | 2015-02-04 | 天津工业大学 | Two-dimensional grating coupling-based silicon-based QPSK (Quadrature Phase Shift Keying) photomodulator |
| CN105261667A (en) * | 2015-10-30 | 2016-01-20 | 中山大学 | Travelling wave structure photo-detector chip and preparation method thereof |
| CN205427236U (en) * | 2015-10-15 | 2016-08-03 | 扬州瑞威光电科技有限公司 | Plane single scale intergration wavelength devision multiplex - demultiplexer |
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2016
- 2016-10-27 CN CN201610959639.1A patent/CN106549024A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030034854A1 (en) * | 2001-08-16 | 2003-02-20 | Tzeng Liang D. | Differential transmission line for high bandwidth signals |
| US20060280405A1 (en) * | 2003-03-21 | 2006-12-14 | Gunn Iii Lawrence C | Polarization splitting grating couplers |
| CN102540505A (en) * | 2012-01-13 | 2012-07-04 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
| WO2013123294A2 (en) * | 2012-02-15 | 2013-08-22 | Cogo Optronics, Inc. | Mach-zehnder optical modulator using a balanced coplanar stripline with lateral ground planes |
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| CN112304906A (en) * | 2020-10-23 | 2021-02-02 | 重庆理工大学 | Dual-channel probe type 81-degree inclined fiber bragg grating sensor system and preparation method and application thereof |
| CN112304906B (en) * | 2020-10-23 | 2024-01-23 | 重庆理工大学 | Dual-channel probe type 81-degree inclined fiber bragg grating sensor system and preparation method and application thereof |
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