CN206591180U - A kind of board-like PECVD boards - Google Patents
A kind of board-like PECVD boards Download PDFInfo
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- CN206591180U CN206591180U CN201720154337.7U CN201720154337U CN206591180U CN 206591180 U CN206591180 U CN 206591180U CN 201720154337 U CN201720154337 U CN 201720154337U CN 206591180 U CN206591180 U CN 206591180U
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Abstract
The utility model discloses a kind of board-like PECVD boards, conveying roller including being placed with graphite frame, the feed cavity discharged successively along the upper transmission direction of conveying roller, preheating cavity, front for the front matte in silicon chip forms the first process cavity of front side silicon nitride silicon layer, cooling chamber and discharging chamber, the second process cavity for forming back side silicon nitride silicon layer at the back side of silicon chip is additionally provided between first process cavity and cooling chamber, the 3rd process cavity that back side silicon dioxide layer is formed for the back side of the back side silicon nitride silicon layer in silicon chip is additionally provided between second process cavity and cooling chamber；Silicon chip to be processed is placed on graphite frame, and sequentially passes through feed cavity, preheating cavity, the first process cavity, the second process cavity, the 3rd process cavity, cooling chamber and discharging chamber along the upper transmission direction of conveying roller.The board-like PECVD boards, can realize the processing of front side silicon nitride silicon and back side silicon nitride silicon, the cell piece prepared can double-sided reflecting light so that effectively lifted backlight absorptivity.
Description
Technical field
The utility model is related to technical field of solar cell manufacturing, more particularly to a kind of board-like PECVD boards.
Background technology
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.Device of solar generating is also known as solar cell or photovoltaic cell, can be by
Solar energy is directly changed into electric energy, and its electricity generating principle is the photovoltaic effect based on semiconductor PN.Device of solar generating
Core be cell piece, it is most at present to be all made of silicon chips.
In order to lift the market competitiveness of photovoltaic cell, it is badly in need of the cost of electricity-generating of reduction cell piece, and the cost of naked silicon chip
More than the 50% of whole cell piece processing cost is accounted for, therefore, the cost for reducing naked silicon chip is imperative, and reduces silicon
Piece thickness is then one of effective ways of effective reduction silicon chip cost.But with the reduction of silicon wafer thickness, it will there is more length
Wave band sunshine is perforated through silicon chip, it is impossible to absorbed by silicon chip, and efficiency is lost；Therefore, in cell piece production process
In, it is necessary to cell piece semi-finished product battery be silicon chip surface plate last layer antireflective coating.
At present, using plasma enhancing chemical gaseous phase depositing process (PECVD, Plasma Enhanced Chemical
Vapor Deposition), make gas occur to chemically react and formed coating, i.e. antireflective coating in silicon chip surface.This anti-reflection
Penetrating the main function of film is：Reduce reflectivity, good body to be passivated and surface passivation, and utilize the strong densification of silicon nitride film
Property and resistance to most acid-base property, silicon chip surface formation protective layer.
In the prior art, for the board-like PECVD boards in PECVD methods, as shown in figure 1, including conveying roller 3 ', edge
Feed cavity 4 ', preheating cavity 5 ', the first process cavity 6 ', cooling chamber 9 ' that the upper transmission direction of conveying roller 3 ' discharges successively, go out
Expect chamber 10 ', silicon chip 1 ' to be processed is positioned on graphite frame 2 ', and graphite frame 2 ' is placed on conveying roller 3 ', rolled by transmitting
Wheel 3 ' drives silicon chip 1 ' to be processed to sequentially pass through feed cavity 4 ', preheating cavity 5 ', the first process cavity 6 ', cooling chamber 9 ', discharging chamber
After 10 ', cell piece is formed, its structure is as shown in Fig. 2 including silicon chip 1 ', there is matte 11 ' in the front of silicon chip 1 ', and matte is more than 11 '
There is front side silicon nitride silicon layer 12 ', there is Al-BSF 13 ' at the back side of silicon chip 1 ', it can be seen that, the cell piece produced by the board, only
Front side silicon nitride silicon layer 13 ' is formed in the front of silicon chip, the reflection of front lighting is only realized, and the reflection of back light can not be by this
Board realizes that this is accomplished by extra equipment and individually processes realization so that the quantity that process equipment needs is more, and process is numerous
It is trivial.
Utility model content
The purpose of this utility model is a kind of board-like PECVD boards of proposition, can realize front side silicon nitride silicon and back side nitrogen
The processing of SiClx, the cell piece prepared can double-sided reflecting light so that effectively lifted backlight absorptivity.
For up to this purpose, the utility model uses following technical scheme：
A kind of board-like PECVD boards, including the conveying roller of graphite frame is placed with, along the upper transmission of the conveying roller
Feed cavity that direction is discharged successively, preheating cavity, the front for the front matte in silicon chip form the first of front side silicon nitride silicon layer
Process cavity, cooling chamber and discharging chamber,
It is additionally provided between first process cavity and the cooling chamber for forming back side silicon nitride silicon at the back side of silicon chip
Second process cavity of layer, is additionally provided between second process cavity and the cooling chamber for the back side silicon nitride silicon layer in silicon chip
The back side formed back side silicon dioxide layer the 3rd process cavity；
Silicon chip to be processed is placed on the graphite frame, and is sequentially passed through along the upper transmission direction of the conveying roller
The feed cavity, the preheating cavity, first process cavity, second process cavity, the 3rd process cavity, the cooling chamber
And the discharging chamber.
As a kind of preferred embodiment, ammonia and silane gas, and the second process cavity have been passed through in second process cavity
In be furnished with the first microwave-excitation device.
It is preferred that, the thickness of the back side silicon nitride silicon layer deposited through second process cavity is 50~100nm, refractive index
For 2.30~2.60.
It is further preferred that the thickness of the back side silicon nitride silicon layer is 80nm, refractive index is 2.50.
As a kind of preferred embodiment, it has been passed through in silane and laughing gas, and the 3rd process cavity of institute and has matched somebody with somebody in the 3rd process cavity
There is the second microwave-excitation device.
It is preferred that, the thickness of the back side silicon dioxide layer of the 3rd process cavity deposition is 20~50nm, refractive index
For 1.45~1.70.
It is further preferred that the thickness of the back side silicon dioxide layer is 30nm, refractive index is 1.65.
The beneficial effects of the utility model are：
Board-like PECVD boards of the present utility model, the deposition of front side silicon nitride silicon layer is realized by the first process cavity, passes through
Two process cavities realize the deposition of back side silicon nitride silicon layer, realize the deposition of back side silicon dioxide layer by the 3rd process cavity, thus
During the time processing of the board, front side silicon nitride silicon layer, back side silicon nitride silicon layer and back side silicon dioxide layer can be successively realized,
The reflection of front lighting is realized using front side silicon nitride silicon layer, the reflection of back light, and back side silicon nitride are realized using back side silicon nitride silicon layer
Silicon layer can realize that the stress of front side silicon nitride silicon layer is neutralized, and be more beneficial for protecting cell piece；And back side silicon dioxide layer can with
With back side silicon nitride silicon layer, to form total reflection, the reflectivity of cell piece back light is further improved；Therefore, the board is laid out
Rationally so that preparation process is more smooth, it is to avoid change the feeding, discharge operation that other boards are caused in processing midway, it is ensured that processing matter
Amount；Its integrated first process cavity, the second process cavity and the 3rd process cavity, the cell piece prepared can double-sided reflecting light, from
And effectively lift backlight absorptivity.
Brief description of the drawings
Fig. 1 is the structural representation of board-like PECVD boards of the prior art；
Fig. 2 is the cell piece structural representation that the board-like PECVD boards in Fig. 1 are processed；
Fig. 3 is the structural representation of board-like PECVD boards of the present utility model；
Fig. 4 is the cell piece structural representation that the board-like PECVD boards in Fig. 3 are processed.
In figure：
1st, silicon chip；2nd, graphite frame；3rd, upper conveying roller；4th, feed cavity；5th, preheating cavity；6th, the first process cavity；7th, the second work
Skill chamber；8th, the 3rd process cavity；9th, cooling chamber；10th, discharging chamber；
11st, matte；12nd, front side silicon nitride silicon layer；13rd, Al-BSF；14th, back side silicon nitride silicon layer；15th, back side silicon dioxide layer；
1 ', silicon chip；2 ', graphite frame；3 ', upper conveying roller；4 ', feed cavity；5 ', preheating cavity；6 ', first process cavity；9’、
Cooling chamber；10 ', discharging chamber；
11 ', matte；12 ', front side silicon nitride silicon layer；13 ', Al-BSF.
Embodiment
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by embodiment.
As shown in figure 3, a kind of board-like PECVD boards, including the conveying roller 3 of graphite frame 2 is placed with, along the transmission
Feed cavity 4 that the upper transmission direction of roller 3 is discharged successively, preheating cavity 5, the front for the front matte 11 in silicon chip 1 are formed
The first process cavity 6, cooling chamber 9 and the discharging chamber 10 of front side silicon nitride silicon layer 12；First process cavity 6 and the cooling chamber 9
Between be additionally provided with the second process cavity 7 for forming back side silicon nitride silicon layer 14 at the back side of silicon chip 1, second process cavity 7
It is additionally provided between the cooling chamber 9 and forms back side silicon dioxide layer for the back side of the back side silicon nitride silicon layer 14 in silicon chip 1
15 the 3rd process cavity 8.
Silicon chip 1 to be processed is placed on the graphite frame 2, and along the conveying roller 3 upper transmission direction successively
By the feed cavity 4, the preheating cavity 5, first process cavity 6, second process cavity 7, the 3rd process cavity 8,
The cooling chamber 9 and the discharging chamber 10.
The board-like PECVD boards, the deposition of front side silicon nitride silicon layer 12 is realized by the first process cavity 6, passes through the second technique
Chamber 7 realizes the deposition of back side silicon nitride silicon layer 14, realizes the deposition of back side silicon dioxide layer 15 by the 3rd process cavity 8, thus
During the time processing of the board, front side silicon nitride silicon layer 12, back side silicon nitride silicon layer 14 and back side titanium dioxide can be successively realized
Silicon layer 15, the reflection of front lighting is realized using front side silicon nitride silicon layer 12, and the reflection of back light is realized using back side silicon nitride silicon layer 14,
And back side silicon nitride silicon layer 14 can realize that the stress of front side silicon nitride silicon layer 12 is neutralized, and be more beneficial for protecting cell piece；And the back side two
Silicon oxide layer 15 can match back side silicon nitride silicon layer 14, to form total reflection, further improve the reflection of cell piece back light
Rate.
Therefore, the board is rationally distributed so that preparation process is more smooth, it is to avoid change what other boards were caused in processing midway
Feeding, discharge is operated, it is ensured that crudy；Its integrated first process cavity, the second process cavity and the 3rd process cavity, the electricity prepared
Pond piece can double-sided reflecting light so that effectively lifted backlight absorptivity.
As a kind of preferred embodiment, ammonia and silane gas, and the second process cavity have been passed through in second process cavity 7
It is furnished with the first microwave-excitation device in 7.Plasma is inspired using the first microwave-excitation device, coordinates ammonia and silane gas
Body, with the backside deposition back side silicon nitride silicon layer 14 of silicon chip 1.It is preferred that, the back side nitrogen deposited through second process cavity 7
The thickness of SiClx layer 14 is 50~100nm, and refractive index is 2.30~2.60.For example, the thickness of the back side silicon nitride silicon layer 14 is
50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, refractive index be 2.30,2.35,
2.40th, 2.45,2.50,2.55,2.60, it is further preferred that in the present embodiment, the thickness of the back side silicon nitride silicon layer 14 is
80nm, refractive index is 2.50.
As a kind of preferred embodiment, it has been passed through in the 3rd process cavity 8 in silane and laughing gas, and the 3rd process cavity 8 of institute
Equipped with the second microwave-excitation device.Plasma is inspired using the second microwave-excitation device, coordinates silane and laughing gas, with the back of the body
The backside deposition back side silicon dioxide layer 15 of face silicon nitride layer 14.It is preferred that, the back side two of the 3rd process cavity 8 deposition
The thickness of silicon oxide layer 15 is 20~50nm, and refractive index is 1.45~1.70.For example, the thickness of the back side silicon dioxide layer 15
For 20nm, 22nm, 25nm, 28nm, 30nm, 33nm, 35nm, 37nm, 40nm, 42nm, 45nm, 48nm, 80nm, refractive index is
1.45、1.46、1.47、1.48、1.49、1.50、1.52、1.53、1.54、1.55、1.56、1.57、1.58、1.59、1.60、
1.61st, 1.62,1.63,1.64,1.65,1.66,1.67,1.68,1.69,1.70, it is further preferred that in the present embodiment,
The thickness of the back side silicon dioxide layer 15 is 30nm, and refractive index is 1.65.
As shown in figure 4, processing obtained cell piece structure, including silicon chip 1 by the board, there is matte 11 in the front of silicon chip 1,
There is front side silicon nitride silicon layer 12 on matte 11, there are back side silicon nitride silicon layer 14, the and of back side silicon dioxide layer 15 in the back side of silicon chip 1 successively
Al-BSF 13.The cell piece can realize total reflection, effectively improve absorptivity.
In summary, with the reduction of silicon wafer thickness, more long-wave band sunshines is had and are perforated through silicon chip, it is impossible to by silicon
Piece is absorbed, and in the present embodiment, back side silicon nitride silicon layer, back side silicon dioxide layer is provided with the back side of silicon chip, to increase
Plus the reflection of back light, light path of the light in wafer bulk is added, this is beneficial to the lifting of cell piece efficiency.
Board of the present utility model, operation and control are simple, and the film that front and back is realized on same board sinks
Product.
Technical principle of the present utility model is described above in association with specific embodiment.These descriptions are intended merely to explain this reality
With new principle, and the limitation to the utility model protection domain can not be construed in any way.Based on explanation herein,
Those skilled in the art, which would not require any inventive effort, can associate other embodiments of the present utility model,
These modes are fallen within protection domain of the present utility model.
Claims (7)
1. a kind of board-like PECVD boards, it is characterised in that the conveying roller (3) including being placed with graphite frame (2), along described
Feed cavity (4) that the upper transmission direction of conveying roller (3) is discharged successively, preheating cavity (5), for the front matte in silicon chip (1)
(11) front forms the first process cavity (6), cooling chamber (9) and the discharging chamber (10) of front side silicon nitride silicon layer (12),
It is additionally provided between first process cavity (6) and the cooling chamber (9) for forming back side nitrogen at the back side of silicon chip (1)
The second process cavity (7) of SiClx layer (14), being additionally provided between second process cavity (7) and the cooling chamber (9) is used for
The back side of the back side silicon nitride silicon layer (14) of silicon chip (1) forms the 3rd process cavity (8) of back side silicon dioxide layer (15)；
Silicon chip (1) to be processed is placed on the graphite frame (2), and along the conveying roller (3) upper transmission direction according to
It is secondary by the feed cavity (4), the preheating cavity (5), first process cavity (6), second process cavity (7), described the
Three process cavities (8), the cooling chamber (9) and the discharging chamber (10).
2. board-like PECVD boards according to claim 1, it is characterised in that be passed through ammonia in second process cavity (7)
It is furnished with the first microwave-excitation device in gas and silane gas, and the second process cavity of institute (7).
3. board-like PECVD boards according to claim 2, it is characterised in that the institute deposited through second process cavity (7)
The thickness for stating back side silicon nitride silicon layer (14) is 50~100nm, and refractive index is 2.30~2.60.
4. board-like PECVD boards according to claim 3, it is characterised in that the thickness of the back side silicon nitride silicon layer (14)
For 80nm, refractive index is 2.50.
5. board-like PECVD boards according to claim 1, it is characterised in that be passed through silicon in the 3rd process cavity (8)
It is furnished with the second microwave-excitation device in alkane and laughing gas, and the 3rd process cavity (8) of institute.
6. board-like PECVD boards according to claim 5, it is characterised in that it is described that the 3rd process cavity (8) deposits
The thickness of back side silicon dioxide layer (15) is 20~50nm, and refractive index is 1.45~1.70.
7. board-like PECVD boards according to claim 6, it is characterised in that the thickness of the back side silicon dioxide layer (15)
Spend for 30nm, refractive index is 1.65.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720154337.7U CN206591180U (en) | 2017-02-20 | 2017-02-20 | A kind of board-like PECVD boards |
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| CN201720154337.7U CN206591180U (en) | 2017-02-20 | 2017-02-20 | A kind of board-like PECVD boards |
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| CN206591180U true CN206591180U (en) | 2017-10-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760621A (en) * | 2020-12-09 | 2021-05-07 | 晋能光伏技术有限责任公司 | Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition |
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- 2017-02-20 CN CN201720154337.7U patent/CN206591180U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760621A (en) * | 2020-12-09 | 2021-05-07 | 晋能光伏技术有限责任公司 | Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition |
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| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Funing atlas sunshine Power Technology Co., Ltd Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |