CN112760621A - Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition - Google Patents
Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition Download PDFInfo
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- CN112760621A CN112760621A CN202011450582.5A CN202011450582A CN112760621A CN 112760621 A CN112760621 A CN 112760621A CN 202011450582 A CN202011450582 A CN 202011450582A CN 112760621 A CN112760621 A CN 112760621A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 27
- 238000000151 deposition Methods 0.000 title claims abstract description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 21
- 230000008021 deposition Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 238000001816 cooling Methods 0.000 claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 16
- 238000007789 sealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a multilayer PECVD device suitable for amorphous silicon deposition of an HJT battery, which comprises: the preheating cavity, the process cavity and the cooling cavity are communicated in sequence, and the silicon wafer is preheated in the preheating cavity, then conveyed to the process cavity for depositing an amorphous silicon film, and conveyed from the process cavity to the cooling cavity for cooling; one side surface of the process cavity is provided with an air inlet, the opposite side surface is provided with a tail gas pipeline, at least two electrode plates are arranged inside the process cavity, the electrode plates are arranged in parallel in the vertical direction and are separated from two adjacent electrode plates through an insulating block, and the two adjacent electrode plates are respectively connected with a radio frequency power supply and a zero potential; the tail gas pipeline is at least provided with an air exhaust hole; the invention relates to single-cavity multilayer amorphous silicon deposition equipment, wherein electrode plates are arranged in parallel in the vertical direction to form a multilayer structure, so that the occupied area of the equipment can be effectively reduced, the capacity of the single equipment is greatly increased, and the problems in the prior art are solved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a multi-layer PECVD device suitable for amorphous silicon deposition of an HJT cell.
Background
With the development of solar cell technology, the development of high-efficiency cells is more and more emphasized. HJT cells (silicon-based heterojunction solar cells) passivated with an intrinsic amorphous silicon layer (a-Si: h (i)) are one of the major research directions. As is well known, the silicon-based heterojunction solar cell not only has high conversion efficiency and high open-circuit voltage, but also has the advantages of low temperature coefficient, no Light Induced Degradation (LID), no induced degradation (PID), low preparation process temperature and the like. In addition, the silicon-based heterojunction battery ensures high conversion efficiency, and the thickness of the silicon wafer can be reduced to 100 mu m, so that the consumption of silicon materials is effectively reduced, and the silicon-based heterojunction battery can be used for preparing a bendable component.
For the HJT battery, the amorphous silicon plays a key role in passivation and formation of a p-n junction and plays a decisive role in the conversion efficiency of the HJT battery, so that the preparation of the amorphous silicon thin film with excellent performance is a key technology for obtaining the high-efficiency HJT battery. At present, the amorphous silicon deposition of the HJT battery mainly comprises two types of equipment, namely plate PECVD and Cat-CVD, and the two types of amorphous silicon deposition equipment mainly comprise the following problems: 1. the vacuum cavity is large, so that the equipment is expensive; 2. the flat-plate type carrier plate is characterized in that one carrier plate is placed in one cavity, and the capacity of single equipment is small; 3, the equipment has large size, high matching cost of factory service and automation and large occupied area. It can be seen that the current amorphous silicon deposition equipment is a main influence factor for limiting the large-scale mass production of HJT battery products.
Therefore, how to provide a multi-layer PECVD apparatus with smaller volume and occupied area suitable for amorphous silicon deposition of HJT cell is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT battery
In order to achieve the purpose, the invention adopts the following technical scheme:
a multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT cells, comprising: the preheating cavity, the process cavity and the cooling cavity are communicated in sequence, and the silicon wafer is preheated in the preheating cavity, then conveyed to the process cavity for depositing an amorphous silicon film, and conveyed from the process cavity to the cooling cavity for cooling;
one side surface of the process cavity is provided with an air inlet, the opposite side surface is provided with a tail gas pipeline, at least two electrode plates are arranged inside the process cavity, the electrode plates are arranged in parallel in the vertical direction and are separated from two adjacent electrode plates through an insulating block, and the two adjacent electrode plates are respectively connected with a radio frequency power supply and a zero potential; the tail gas pipeline is at least provided with an air exhaust hole;
the silicon chip is placed between two adjacent electrode plates, the electrode plates are fixedly or movably arranged in the process cavity, when the electrode plates are fixedly arranged, except for the topmost electrode plate, each electrode plate is provided with a movable carrier plate, the silicon chip is arranged on the movable carrier plate, and when the electrode plates are movably arranged in the process cavity, the silicon chip is directly placed on the two adjacent electrode plates;
wherein, at least one silicon wafer is arranged between every two adjacent electrode plates.
Preferably, the distance between two adjacent electrode plates is 10mm-50 mm.
Preferably, 1-200 silicon wafers are included between every two adjacent electrode plates.
Preferably, the frequency of the radio frequency power supply is 40kHz-40 MHz.
Preferably, the air inlet is provided with an air homogenizing plate, and the air homogenizing plate is provided with air homogenizing holes.
Preferably, the cavity of the process chamber is of a cubic structure, the cavity of the process chamber is insulated from the electrode plate, and the wall of the process chamber is provided with a heating plate for heating the temperature in the cavity of the process chamber to 150-300 ℃.
Preferably, the electrode plate or the movable carrier plate is moved by a high temperature resistant roller or belt.
Preferably, the preheating cavity is of a sealing structure in a working state, the preheating cavity is correspondingly connected with the process cavity through the transmission device, the internal structure of the preheating cavity is the same as that of the process cavity, and the electrode plates in the two cavities are correspondingly arranged respectively.
Preferably, the cooling chamber is of a sealing structure in a working state, the process chamber is correspondingly connected with the cooling chamber through the transmission device, the internal structure of the cooling chamber is the same as that of the process chamber, and the electrode plates in the two chambers are correspondingly arranged respectively.
Preferably, the side surfaces of the preheating cavity, the process cavity and the cooling cavity are provided with opening and closing structures, the opening and closing structures are closed when the preheating cavity, the process cavity and the cooling cavity are in a working state, and the opening and closing structures are opened in the process of conveying the silicon wafers.
According to the technical scheme, compared with the prior art, the invention discloses a multilayer PECVD device suitable for amorphous silicon deposition of an HJT battery, the device is a single-cavity multilayer amorphous silicon deposition device, electrode plates are arranged in parallel in the vertical direction to form a multilayer structure, the occupied area of the device can be effectively reduced, the size of the device can be reduced, the problems in the prior art are solved, the device can heat electrode plates, and the adjacent electrode plates are respectively connected with a radio frequency power supply and a zero potential, so that the device has the effect of plasma enhanced chemical vapor deposition in the environment of electrifying and reaction gas.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a process chamber structure in a multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT cell according to the present invention;
FIG. 2 is a schematic diagram of a movable carrier plate structure in a multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT battery according to the present invention;
FIG. 3 is a schematic diagram of a gas homogenizing plate structure in a multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT cell according to the present invention;
wherein, the device comprises 1-a gas homogenizing plate, 2-a gas inlet, 3-a radio frequency power supply, 4-a tail gas pipeline, 5-an insulating block, 6-an electrode plate or a movable carrier plate, 7-a gas homogenizing hole and 8-a silicon wafer groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment discloses a multilayer PECVD device suitable for amorphous silicon deposition of an HJT battery, which comprises: the preheating cavity, the process cavity and the cooling cavity are communicated in sequence, and the silicon wafer is preheated in the preheating cavity, then conveyed to the process cavity for depositing an amorphous silicon film and conveyed from the process cavity to the cooling cavity for cooling;
as shown in fig. 1, one side surface of the process chamber is provided with an air inlet 2, the opposite side surface is provided with a tail gas pipeline 4, at least two electrode plates 6 are arranged in the process chamber, the electrode plates 6 are arranged in parallel in the vertical direction and are separated by 5 to form two adjacent electrode plates 6, and the two adjacent electrode plates 6 are respectively connected with a radio frequency power supply 3 and a zero potential; the tail gas pipeline 4 is provided with at least one air exhaust hole;
the silicon chip is placed between two adjacent electrode plates 6, the electrode plates 6 are fixedly or movably arranged in the process cavity, when the electrode plates 6 are fixedly arranged, except for the topmost electrode plate 6, each electrode plate 6 is provided with a movable carrier plate 6, the silicon chip is arranged on the movable carrier plate 6, and when the electrode plates 6 are movably arranged in the process cavity, the silicon chip is directly placed on the two adjacent electrode plates 6;
wherein, at least one silicon wafer is arranged between every two adjacent electrode plates 6.
It should be noted that: reaction gas enters the process cavity through the gas inlet 2, the gas inlet 2 enables the gas to be uniformly distributed through the gas homogenizing plate 1, the tail gas pipeline 4 is provided with a plurality of extraction holes, the balance of gas flow in the cavity can be realized, the tail gas is uniformly extracted by the vacuum pump, the process cavity can be extracted to a vacuum environment, and the pressure intensity in the process cavity is controllable.
Because the space between two adjacent electrode plates 6 is small, and the silicon wafer is not easy to be directly placed, the device for bearing the silicon wafer can be moved outside the equipment, in order to achieve the purpose, the invention adopts two modes of arranging the slidable electrode plate 6 or the movable carrier plate 6, and the movable electrode plate 6 or the movable carrier plate 6 can be arranged by using a high-temperature resistant belt or a roller. The electrode plate 6 is made of conductive metal materials such as aluminum and stainless steel, and the electrode plate 6 also has a heating function at a temperature of 20-300 ℃.
The process chamber is in a closed structure in a working state.
The movable carrier 6 is provided with 1-200 silicon wafer slots 8, as shown in fig. 2.
In order to further implement the technical scheme, the distance between two adjacent electrode plates 6 is 10mm-50 mm.
In order to further implement the technical scheme, 1-200 silicon wafers are arranged between every two adjacent electrode plates 6.
In order to further implement the above technical solution, the frequency of the radio frequency power supply 3 is 40kHz-40 MHz.
It should be noted that: and selecting a corresponding matcher during connection.
In order to further implement the above technical solution, an air uniform plate 1 is disposed at the air inlet 2, and an air uniform hole 7 is disposed on the air uniform plate 1, as shown in fig. 3.
In order to further implement the above technical solution, the cavity of the process chamber is a cubic structure, the cavity of the process chamber is insulated from the electrode plate 6, and the wall of the process chamber is provided with a heating plate for heating the temperature in the cavity of the process chamber to 150-.
In order to further implement the above technical solution, the electrode plate 6 or the movable carrier plate 6 is moved by a high temperature resistant roller or belt.
In order to further implement the technical scheme, the preheating cavity is in a sealing structure in a working state, the preheating cavity is correspondingly connected with the process cavity through the transmission device, the internal structure of the preheating cavity is the same as that of the process cavity, and the electrode plates 6 in the two cavities are correspondingly arranged respectively.
In order to further implement the technical scheme, the cooling cavity is in a sealing structure in a working state, the process cavity is correspondingly connected with the cooling cavity through the transmission device, the internal structure of the cooling cavity is the same as that of the process cavity, and the electrode plates 6 in the two cavities are correspondingly arranged respectively.
In order to further implement the technical scheme, the side surfaces of the preheating cavity, the process cavity and the cooling cavity are respectively provided with an opening and closing structure, the opening and closing structures are closed when the preheating cavity, the process cavity and the cooling cavity are in a working state, and the opening and closing structures are opened in the process of transmitting the silicon wafers.
The working principle of the invention is as follows:
the opening and closing structure of the preheating cavity is opened, the silicon wafer is conveyed to the movable electrode plate or the movable carrier plate 6 in the preheating cavity from the external structure, after the preheating cavity is preheated, the opening and closing structure of the process cavity is opened, the movable electrode plate or the movable carrier plate 6 is used for depositing an amorphous silicon film, the silicon wafer is conveyed to the movable electrode plate or the movable carrier plate 6 in the process cavity through the conveying device, and then the silicon wafer is conveyed to the cooling cavity opened by the opening and closing structure from the process cavity to be cooled.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A multi-layer PECVD apparatus suitable for amorphous silicon deposition of HJT cells, comprising: the preheating chamber, the process chamber and the cooling chamber are communicated in sequence, and the preheating chamber is characterized in that a silicon wafer is preheated and then is conveyed to the process chamber for depositing an amorphous silicon film, and the silicon wafer is conveyed from the process chamber to the cooling chamber for cooling;
one side surface of the process cavity is provided with an air inlet, the opposite side surface is provided with a tail gas pipeline, at least two electrode plates are arranged inside the process cavity, the electrode plates are arranged in parallel in the vertical direction and are separated from two adjacent electrode plates through an insulating block, and the two adjacent electrode plates are respectively connected with a radio frequency power supply and a zero potential; the tail gas pipeline is at least provided with an air exhaust hole;
the silicon chip is placed between two adjacent electrode plates, the electrode plates are fixedly or movably arranged in the process cavity, when the electrode plates are fixedly arranged, except for the topmost electrode plate, each electrode plate is provided with a movable carrier plate, the silicon chip is arranged on the movable carrier plate, and when the electrode plates are movably arranged in the process cavity, the silicon chip is directly placed on the two adjacent electrode plates;
wherein, at least one silicon wafer is arranged between every two adjacent electrode plates.
2. The multi-layer PECVD apparatus of claim 1, wherein the distance between two adjacent electrode plates is 10mm-50 mm.
3. The multi-layer PECVD apparatus of claim 1, wherein between every two adjacent electrode plates, there are 1-200 silicon wafers.
4. The multi-layer PECVD apparatus of claim 1, wherein the frequency of the RF power source is 40kHz-40 MHz.
5. The multi-layer PECVD apparatus as claimed in claim 1, wherein the gas inlet is provided with a gas homogenizing plate having gas homogenizing holes.
6. The multi-layer PECVD apparatus as claimed in claim 1, wherein the chamber of the process chamber has a cubic structure, the electrode plate is insulated from the chamber of the process chamber, and a heating plate is disposed on the chamber wall to heat the temperature in the chamber of the process chamber to 150-300 ℃.
7. The apparatus of claim 1, wherein the electrode plate or the movable carrier plate is moved by a high temperature roller or a belt.
8. The apparatus of claim 1, wherein the preheating chamber is a sealed structure in operation, the preheating chamber is correspondingly connected to the process chamber via a transmission device, the internal structure of the preheating chamber is the same as the internal structure of the process chamber, and the electrode plates in the two chambers are correspondingly disposed.
9. The apparatus of claim 8, wherein the cooling chamber is a sealed structure in operation, the process chamber and the cooling chamber are correspondingly connected by a transmission device, the internal structure of the cooling chamber is the same as the internal structure of the process chamber, and the electrode plates in the two chambers are correspondingly disposed.
10. The multi-layer PECVD apparatus of claim 1, wherein the preheating chamber, the process chamber and the cooling chamber are provided with open-close structures on their sides, and the open-close structures are closed when in operation and opened when transferring silicon wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011450582.5A CN112760621A (en) | 2020-12-09 | 2020-12-09 | Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011450582.5A CN112760621A (en) | 2020-12-09 | 2020-12-09 | Multilayer PECVD equipment suitable for HJT battery amorphous silicon deposition |
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| CN112760621A true CN112760621A (en) | 2021-05-07 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176011A1 (en) * | 2002-03-12 | 2003-09-18 | Kyocera Corporation | Cat-PECVD method, film forming apparatus for implementing the method, film formed by use of the method and device manufactured using the film |
| CN206591180U (en) * | 2017-02-20 | 2017-10-27 | 苏州阿特斯阳光电力科技有限公司 | A kind of board-like PECVD boards |
| CN109778148A (en) * | 2019-03-01 | 2019-05-21 | 晋能光伏技术有限责任公司 | It is a kind of for producing the PECVD device of heterojunction solar battery plated film |
-
2020
- 2020-12-09 CN CN202011450582.5A patent/CN112760621A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176011A1 (en) * | 2002-03-12 | 2003-09-18 | Kyocera Corporation | Cat-PECVD method, film forming apparatus for implementing the method, film formed by use of the method and device manufactured using the film |
| CN206591180U (en) * | 2017-02-20 | 2017-10-27 | 苏州阿特斯阳光电力科技有限公司 | A kind of board-like PECVD boards |
| CN109778148A (en) * | 2019-03-01 | 2019-05-21 | 晋能光伏技术有限责任公司 | It is a kind of for producing the PECVD device of heterojunction solar battery plated film |
Non-Patent Citations (1)
| Title |
|---|
| 师昌绪: "材料科学探索", 河北教育出版社, pages: 337 * |
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