CN206574716U - A kind of horizontal high-voltage power bipolar junction transistor - Google Patents
A kind of horizontal high-voltage power bipolar junction transistor Download PDFInfo
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- CN206574716U CN206574716U CN201720194577.XU CN201720194577U CN206574716U CN 206574716 U CN206574716 U CN 206574716U CN 201720194577 U CN201720194577 U CN 201720194577U CN 206574716 U CN206574716 U CN 206574716U
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Abstract
The utility model discloses a kind of horizontal high-voltage power bipolar junction transistor；Specifically on the basis of a kind of conventional lateral direction power dipole collective pipe, the injection of N-type ring-type is added between all collecting zones and launch site, and by optimizing the layout of all metals of first layer, make colelctor electrode first layer metal all standing on collecting zone, size exceeds twice of collecting zone junction depth, and emitter metal is drawn by through hole and the second minor metal.Theory analysis is under reverse pressure-resistant working condition in device, all collector junction edges are due to the covering of Metal field plate, so that the curvature effect of edge curved surface knot is substantially reduced during depletion region diffusion, it is pressure-resistant drastically to become big, and the addition of N rings can greatly reduce the leakage current between device collector and emitter stage.Horizontal high-voltage power bipolar junction transistor of the present utility model is drawn in the case of the influence less of remaining parameter by emulation and actual flow result, BVcbo improves more than 40%, BVceo and improves more than 40%, electric leakage one magnitude of capability improving.
Description
Technical field
The utility model is related to technical field of semiconductors, specifically a kind of horizontal high-voltage power bipolar junction transistor.
Background technology
Middle 1940s, because the electronics systems such as navigation, communication, weaponry are increasingly complicated, lead
The integrated and miniaturization demand for sending a telegraph sub-circuit is increasingly urgent, and nineteen fifty-nine U.S.'s Fairchild Semiconductor has converged predecessor finally
Technological achievement, first piece of practical silicon integrated circuit is manufactured that using planar bipolar technique integrated technology, is integrated circuit
Using and greatly develop and started the beginning, the technique of bipolar integrated circuit is practical at first new in all integrated circuit technologies
Type, is also that application is most commonly used, with the continuous progress of integrated circuit technique, although being chosen by the huge of CMOS technology
War, bipolar technology still relies on the advantage in terms of its high speed, high transconductance, low noise and higher current driving ability,
Development is still very fast, and application field main at present is the simulations such as high-operational amplifier, driver, interface, power management and superelevation
Fast integrated circuit.
Bipolar integrated circuit early stage is main using standard silicon materials as substrate, and uses buried regions technique and isolation technology, after
Continue on the basis of standard bipolar planar technology bipolar utility model polysilicon emitter successively, complementary bipolar, SiGe it is bipolar,
The technique such as SOI Fully dielectric isolations are bipolar, and it is mutual to take thin-film epitaxy, deep trench isolation, polysilicon autoregistration, multiple layer metal extensively
The technologies such as connection so that the bipolar device performance for the novel technique manufacture released successively is improved constantly, but bipolar process is integrated
Technology also becomes to become increasingly complex.
In bipolar process primary element include active device and passive device, passive device mainly include resistance, inductance and
Electric capacity, active device has diode, NPN pipes, Semi-active suspension, substrate PNP transistor, suspension PNP pipe etc..For in bipolar process
For single active component, designer wishes that the characteristic of device each side is all optimal, and bipolar junction transistor has height
The series of advantages such as gain, high current, high-frequency, but continuing to develop with bipolar process integrated technology, show
Drawback is also more and more obvious, and power tube can be understood as multiple bipolar junction transistors and be formed in parallel, the spy such as its is pressure-resistant, electric leakage
Property high pressure field limitation it is particularly evident, it is pressure-resistant, to leak electricity with the parameter such as gain, frequency, device size be quite to be difficult to reconcile
, thus consider each factor just turn into designer one it is extremely difficult the problem of.
Utility model content
The purpose of this utility model is to solve in the prior art, the pressure-resistant deficiency of horizontal high-voltage power bipolar junction transistor
The problems such as with leaking electricity bigger than normal.
To realize that the technical scheme that the utility model purpose is used is a kind of such, horizontal high-voltage power dipole
Transistor, it is characterised in that including P type substrate, n type buried layer, p type buried layer, N-type epitaxy layer, N-type heavy doping ring region, p-type isolation
It is situated between before penetrating region, N-type reach through region, p-type collecting zone, N-type heavy doping base, p-type launch site, pre- oxygen layer, field oxygen layer, TEOS metals
Matter layer, colelctor electrode first layer metal, emitter stage first layer metal, base stage first layer metal, emitter stage second layer metal, colelctor electrode
Second layer metal, base stage second layer metal and IMD planarized dielectrics.
The n type buried layer is located at the centre position of P type substrate upper surface.
The p type buried layer is located at the two ends of P type substrate upper surface.
The N-type epitaxy layer is located on n type buried layer, the N-type epitaxy layer and P type substrate, n type buried layer and p type buried layer
It is in contact.
The p-type isolation penetrating region is in contact with the two ends of N-type epitaxy layer, the bottom of the p-type isolation penetrating region and p-type
The top of buried regions is connected.
The N-type reach through region is located at the left end of n type buried layer, the bottom of the N-type reach through region and the top phase of n type buried layer
Even.
The p-type collecting zone is made up of one or more construction unit repeated.The p-type collecting zone includes ring-type collection
Electric area and center round shape launch site.The p-type collecting zone is located at the centre position of N-type epitaxy layer.
The p-type launch site is located at the centre position of N-type epitaxy layer.The p-type launch site is located between p-type collecting zone.
The N-type heavy doping ring region is located between p-type collecting zone and p-type launch site.
The N-type heavy doping base structure annular in shape, one end of the N-type heavy doping base is located in N-type reach through region
Between position, the other end be located at N-type epitaxy layer in.
The field oxygen layer be located at N-type reach through region upper surface outside, N-type reach through region and p-type collecting zone between upper surface,
Upper surface, the outside of N-type heavy doping base upper surface between p-type collecting zone and N-type heavy doping base.The N-type heavy doping
Base is one end in N-type epitaxy layer.
The pre- oxygen layer is located at the position between the field oxygen layer on N-type epitaxy layer.
The TEOS before-metal medium layers are covered in the position of the non-opening contact hole of whole device surface.The contact hole point
Not Wei Yu within p-type collecting zone, within p-type launch site and within N-type reach through region, the contact hole respectively with p-type collecting zone, P
Type launch site and N-type heavy doping base are in contact.
The emitter stage first layer metal is located in the contact hole of p-type launch site, the emitter stage first layer metal and p-type
Launch site and TEOS before-metal medium layers are in contact.The edge metal size of the emitter stage first layer metal is sent out no more than p-type
Penetrate area.
The colelctor electrode first layer metal is located in the contact hole of p-type collecting zone, the colelctor electrode first layer metal and p-type
Collecting zone and TEOS before-metal medium layers are in contact.The edge metal size of the colelctor electrode first layer metal exceedes p-type current collection
The length at area two ends is 1~5 times of junction depth.
The base stage first layer metal is located in the contact hole of N-type reach through region, and the base stage first layer metal and N-type are heavily doped
Miscellaneous base and TEOS before-metal medium layers are in contact.The edge metal size of the base stage first layer metal is heavily doped no more than N-type
Miscellaneous base.
The IMD planarized dielectrics are located at colelctor electrode first layer metal, emitter stage first layer metal and base stage first layer gold
The position of non-opened hole on category.The through hole is located on emitter stage first layer metal, the portion of colelctor electrode first layer metal
On subregion and on the subregion of base stage first layer metal.
The emitter stage second layer metal is located on the through hole that all emitter stage first layer metals are opened.
The base stage second layer metal is located on the through hole that all base stage first layer metals are opened.
The colelctor electrode second layer metal is located on the through hole that all colelctor electrode first layer metals are opened.
Further, the material of the P type substrate and N-type epitaxy layer includes body silicon, carborundum, GaAs, indium phosphide or germanium
Silicon.
Further, the transistor can be horizontal PNP, additionally it is possible to be horizontal NPN and substrate PNP device.
Further, the p-type launch site is made up of one or more construction unit repeated.
Of the present utility model to have the technical effect that unquestionable, the utility model has advantages below：
1) it is specially in a kind of conventional transverse direction the utility model proposes a kind of horizontal high-voltage power bipolar junction transistor
On the basis of power bipolar junction collective pipe, the injection of N-type ring-type is added between all collecting zones and launch site, and pass through
Optimize the layout of all metals of first layer, make colelctor electrode first layer metal all standing on collecting zone, size exceeds collecting zone
Twice of junction depth, and emitter metal is drawn by through hole and the second minor metal.
2) the utility model theory analysis is under reverse pressure-resistant working condition in device, and all collector junction edges are due to gold
Belong to the covering of field plate so that the curvature effect of edge curved surface knot is substantially reduced when depletion region spreads, it is pressure-resistant drastically to become big, and N rings
Addition can greatly reduce the leakage current between device collector and emitter stage.
3) horizontal high-voltage power bipolar junction transistor of the present utility model is drawn by emulation and actual flow result
In the case of the influence less of remaining parameter, BVcbo improves more than 40%, BVceo and improves more than 40%, electric leakage capability improving one
Individual magnitude.
Brief description of the drawings
Fig. 1 is a kind of 3-D solid structure figure of horizontal high-voltage power bipolar junction transistor of the present utility model；
Fig. 2 is a kind of two-dimension plane structure figure of horizontal high-voltage power bipolar junction transistor of the present utility model；
Fig. 3 is the n type buried layer domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure；
Fig. 4 is the p type buried layer domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure；
Fig. 5 be a kind of horizontal high-voltage power bipolar junction transistor of the present utility model p-type isolation reach through region domain and
Its device architecture；
Fig. 6 is the N-type reach through region domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Part structure；
Fig. 7 is the active area domain and its device junction of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure.
Fig. 8 is p-type launch site and the p-type current collection of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Area's domain and its device architecture.
Fig. 9 be a kind of horizontal high-voltage power bipolar junction transistor of the present utility model N-type heavy doping source region domain and
Its device architecture.
Figure 10 is the contact porose area domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Part structure.
Figure 11 is the M1 metals domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure.
Figure 12 is the through hole domain and its device junction of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure.
Figure 13 is the M2 metals domain and its device of a kind of horizontal high-voltage power bipolar junction transistor of the present utility model
Structure.
In figure：P type substrate 100, n type buried layer 101, p type buried layer 102, N-type epitaxy layer 103, N-type heavy doping ring region 104, P
Type isolation penetrating region 105, N-type reach through region 106, p-type collecting zone 107, N-type heavy doping base 108, p-type launch site 109, pre- oxygen
Layer 110, field oxygen layer 111, TEOS before-metal medium layers 112, colelctor electrode first layer metal 113, emitter stage first layer metal 114,
Base stage first layer metal 115, emitter stage second layer metal 116, colelctor electrode second layer metal 117, the and of base stage second layer metal 118
IMD planarized dielectrics 119.
Embodiment
With reference to embodiment, the utility model is described in further detail, but should not be construed the above-mentioned master of the utility model
Topic scope is only limitted to following embodiments.It is common according to this area in the case where not departing from the above-mentioned technological thought of the utility model
Technological know-how and customary means, make various replacements and change, all should be included in protection domain of the present utility model.
As shown in Fig. 1~Figure 13, a kind of horizontal high-voltage power bipolar junction transistor, it is characterised in that including P type substrate
100th, n type buried layer 101, p type buried layer 102, N-type epitaxy layer 103, N-type heavy doping ring region 104, p-type isolation penetrating region 105, N-type
Reach through region 106, p-type collecting zone 107, N-type heavy doping base 108, p-type launch site 109, pre- oxygen layer 110, field oxygen layer 111, TEOS
Before-metal medium layer 112, colelctor electrode first layer metal 113, emitter stage first layer metal 114, base stage first layer metal 115, hair
Emitter-base bandgap grading second layer metal 116, colelctor electrode second layer metal 117, base stage second layer metal 118 and IMD planarized dielectrics 119.
The n type buried layer 101 is located at the centre position of the upper surface of P type substrate 100.
The p type buried layer 102 is located at the two ends of the upper surface of P type substrate 100.
The N-type epitaxy layer 103 is located on n type buried layer 101, and the N-type epitaxy layer 103 is buried with P type substrate 100, N-type
Layer 101 and p type buried layer 102 are in contact.
The p-type isolation penetrating region 105 is in contact with the two ends of N-type epitaxy layer 103, the p-type isolation penetrating region 105
Bottom is connected with the top of p type buried layer 102.
The N-type reach through region 106 is located at the left end of n type buried layer 101, the bottom of the N-type reach through region 106 and n type buried layer
101 top is connected.
The p-type collecting zone 107 is made up of one or more construction unit repeated.The p-type collecting zone 107 includes
Ring-type collecting zone and center round shape launch site.The p-type collecting zone 107 is located at the centre position of N-type epitaxy layer 103.
The p-type launch site 109 is located at the centre position of N-type epitaxy layer 103.The p-type launch site 109 is located at p-type collection
Between electric area 107.
The N-type heavy doping ring region 104 is located between p-type collecting zone 107 and p-type launch site 109.
The N-type heavy doping base 108 structure annular in shape, one end of the N-type heavy doping base 108 is located at N-type break-through
The centre position in area 106, the other end is located in N-type epitaxy layer 103.
The field oxygen layer 111 is located at outside, N-type reach through region 106 and the p-type collecting zone 107 of the upper surface of N-type reach through region 106
Between upper surface, p-type collecting zone 107 and N-type heavy doping base 108 between upper surface, the upper table of N-type heavy doping base 108
The outside in face.The N-type heavy doping base 108 is one end in N-type epitaxy layer 103.
The pre- oxygen layer 110 is located at the position between the field oxygen layer 111 on N-type epitaxy layer 103.
The TEOS before-metal medium layers 112 are covered in the position of the non-opening contact hole of whole device surface.The contact
Hole is located within p-type collecting zone 107, within p-type launch site 109 and within N-type reach through region 106 respectively, the contact hole difference
It is in contact with p-type collecting zone 107, p-type launch site 109 and N-type heavy doping base 108.
The emitter stage first layer metal 114 is located in the contact hole of p-type launch site 109, the emitter stage first layer gold
Category 114 is in contact with p-type launch site 109 and TEOS before-metal medium layers 112.The edge of the emitter stage first layer metal 114
Metal dimension is no more than p-type launch site 109.
The colelctor electrode first layer metal 113 is located in the contact hole of p-type collecting zone 107, the colelctor electrode first layer gold
Category 113 is in contact with p-type collecting zone 107 and TEOS before-metal medium layers 112.The edge of the colelctor electrode first layer metal 113
The length that metal dimension exceedes the two ends of p-type collecting zone 107 is 1~5 times of junction depth.
The base stage first layer metal 115 is located in the contact hole of N-type reach through region 106, the base stage first layer metal 115
It is in contact with N-type heavy doping base 108 and TEOS before-metal medium layers 112.The edge metal of the base stage first layer metal 115
Size is no more than N-type heavy doping base 108.
The IMD planarized dielectrics 119 are located at colelctor electrode first layer metal 113, emitter stage first layer metal 114 and base stage
The position of non-opened hole on first layer metal 115.The through hole is located on emitter stage first layer metal 114, colelctor electrode
On the subregion of first layer metal 113 and on the subregion of base stage first layer metal 115.
The emitter stage second layer metal 116 is located on the through hole that all emitter stage first layer metals 114 are opened.
The base stage second layer metal 118 is located on the through hole that all base stage first layer metals 115 are opened.
The colelctor electrode second layer metal 117 is located on the through hole that all colelctor electrode first layer metals 113 are opened.
Claims (4)
1. a kind of horizontal high-voltage power bipolar junction transistor, it is characterised in that including P type substrate (100), n type buried layer
(101), p type buried layer (102), N-type epitaxy layer (103), N-type heavy doping ring region (104), p-type isolation penetrating region (105), N-type are worn
Logical area (106), p-type collecting zone (107), N-type heavy doping base (108), p-type launch site (109), pre- oxygen layer (110), field oxygen layer
(111), TEOS before-metal medium layers (112), colelctor electrode first layer metal (113), emitter stage first layer metal (114), base stage
First layer metal (115), emitter stage second layer metal (116), colelctor electrode second layer metal (117), base stage second layer metal
And IMD planarized dielectrics (119) (118)；
The n type buried layer (101) is located at the centre position of P type substrate (100) upper surface；
The p type buried layer (102) is located at the two ends of P type substrate (100) upper surface；
The N-type epitaxy layer (103) is located on n type buried layer (101), the N-type epitaxy layer (103) and P type substrate (100), N
Type buried regions (101) and p type buried layer (102) are in contact；
P-type isolation penetrating region (105) is in contact with the two ends of N-type epitaxy layer (103), and the p-type isolates penetrating region (105)
Bottom be connected with the top of p type buried layer (102)；
The N-type reach through region (106) is located at the left end of n type buried layer (101), and the bottom of the N-type reach through region (106) is buried with N-type
The top of layer (101) is connected；
The p-type collecting zone (107) is made up of one or more construction unit repeated；The p-type collecting zone (107) includes
Ring-type collecting zone and center round shape launch site；The p-type collecting zone (107) is located at the centre position of N-type epitaxy layer (103)；
The p-type launch site (109) is located at the centre position of N-type epitaxy layer (103)；The p-type launch site (109) is located at p-type
Between collecting zone (107)；
The N-type heavy doping ring region (104) is located between p-type collecting zone (107) and p-type launch site (109)；
The N-type heavy doping base (108) structure annular in shape, one end of the N-type heavy doping base (108) is located at N-type break-through
The centre position in area (106), the other end is located in N-type epitaxy layer (103)；
The field oxygen layer (111) is located at the outside, N-type reach through region (106) and p-type collecting zone of N-type reach through region (106) upper surface
(107) upper surface between upper surface, p-type collecting zone (107) and N-type heavy doping base (108) between, N-type heavy doping base
The outside of area (108) upper surface；The N-type heavy doping base (108) is one end in N-type epitaxy layer (103)；
The pre- oxygen layer (110) is located at the position between the field oxygen layer (111) on N-type epitaxy layer (103)；
The TEOS before-metal medium layers (112) are covered in the position of the non-opening contact hole of whole device surface；The contact hole
Respectively within p-type collecting zone (107), within p-type launch site (109) and within N-type reach through region (106), the contact hole
It is in contact respectively with p-type collecting zone (107), p-type launch site (109) and N-type heavy doping base (108)；
The emitter stage first layer metal (114) is located in the contact hole of p-type launch site (109), the emitter stage first layer gold
Category (114) is in contact with p-type launch site (109) and TEOS before-metal medium layers (112)；The emitter stage first layer metal
(114) edge metal size is no more than p-type launch site (109)；
The colelctor electrode first layer metal (113) is located in the contact hole of p-type collecting zone (107), the colelctor electrode first layer gold
Category (113) is in contact with p-type collecting zone (107) and TEOS before-metal medium layers (112)；The colelctor electrode first layer metal
(113) length that edge metal size exceedes p-type collecting zone (107) two ends is 1~5 times of junction depth；
The base stage first layer metal (115) is located in the contact hole of N-type reach through region (106), the base stage first layer metal
(115) it is in contact with N-type heavy doping base (108) and TEOS before-metal medium layers (112)；The base stage first layer metal
(115) edge metal size is no more than N-type heavy doping base (108)；
The IMD planarized dielectrics (119) are located at colelctor electrode first layer metal (113), emitter stage first layer metal (114) and base
The position of non-opened hole on pole first layer metal (115)；The through hole be located at emitter stage first layer metal (114) on,
On the subregion of colelctor electrode first layer metal (113) and on the subregion of base stage first layer metal (115)；
The emitter stage second layer metal (116) is located on the through hole that all emitter stage first layer metals (114) are opened；
The base stage second layer metal (118) is located on the through hole that all base stage first layer metals (115) are opened；
The colelctor electrode second layer metal (117) is located on the through hole that all colelctor electrode first layer metals (113) are opened.
2. a kind of horizontal high-voltage power bipolar junction transistor according to claim 1, it is characterised in that：The p-type lining
The material of bottom (100) and N-type epitaxy layer (103) includes body silicon, carborundum, GaAs, indium phosphide or germanium silicon.
3. a kind of horizontal high-voltage power bipolar junction transistor according to claim 1, it is characterised in that：The transistor
Can be horizontal PNP, additionally it is possible to be horizontal NPN and substrate PNP device.
4. a kind of horizontal high-voltage power bipolar junction transistor according to claim 1, it is characterised in that：The p-type hair
Area (109) is penetrated to be made up of one or more construction unit repeated.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946356A (en) * | 2017-03-02 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of transverse direction high-voltage power bipolar junction transistor and its manufacture method |
| CN108493231A (en) * | 2018-02-13 | 2018-09-04 | 重庆中科渝芯电子有限公司 | A kind of high voltage substrate pnp bipolar junction transistor and its manufacturing method |
-
2017
- 2017-03-02 CN CN201720194577.XU patent/CN206574716U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946356A (en) * | 2017-03-02 | 2018-04-20 | 重庆中科渝芯电子有限公司 | A kind of transverse direction high-voltage power bipolar junction transistor and its manufacture method |
| CN107946356B (en) * | 2017-03-02 | 2024-04-09 | 重庆中科渝芯电子有限公司 | Lateral high-voltage power bipolar junction transistor and manufacturing method thereof |
| CN108493231A (en) * | 2018-02-13 | 2018-09-04 | 重庆中科渝芯电子有限公司 | A kind of high voltage substrate pnp bipolar junction transistor and its manufacturing method |
| CN108493231B (en) * | 2018-02-13 | 2020-03-27 | 重庆中科渝芯电子有限公司 | High-voltage substrate PNP bipolar junction transistor and manufacturing method thereof |
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