CN206541309U - A kind of LID read write lines and its across resistance amplifying circuit - Google Patents
A kind of LID read write lines and its across resistance amplifying circuit Download PDFInfo
- Publication number
- CN206541309U CN206541309U CN201720046430.6U CN201720046430U CN206541309U CN 206541309 U CN206541309 U CN 206541309U CN 201720046430 U CN201720046430 U CN 201720046430U CN 206541309 U CN206541309 U CN 206541309U
- Authority
- CN
- China
- Prior art keywords
- signal
- voltage
- module
- control module
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Amplifiers (AREA)
Abstract
The utility model provides a kind of LID read write lines and its across resistance amplifying circuit, includes across resistance amplifying circuit across resistance amplification module, tail current pipe module, common source amplification module, at least one voltage control module and at least one current control module corresponding with the voltage control module quantity.The utility model embodiment is connected to the common source amplification module of external power source by setting altogether with tail current pipe module, the corner frequency across resistance amplifying circuit can be significantly reduced, and it is switched on or switched off the connection between common source amplification module by voltage control module control electric current control module, common source amplification module is set to control the current range of the direct current signal of tail current pipe module output, so as to by controlling the current range of the direct current signal effectively to control the counteracting scope of the DC component in sensor current signal, the accounting scope of DC component offset can effectively be controlled, improve the stability of loop.
Description
Technical field
The utility model embodiment belongs to light identification technology field, more particularly to a kind of LID read write lines and its across resistance amplification
Circuit.
Background technology
Light recognizes (LID, light identification) technology, is a kind of new contactless automatic identification skill
Art, the optical signal that the technology is launched or reflected by detected target object recognizes destination object, and obtains in optical signal and taken
The related data of band.Light identification technology has without manual intervention, electromagnetic-radiation-free, not by electromagnetic interference and anti-monitors etc. excellent
Point, security is good, reliability is high, and extensive use is waited until in electronic label technology field, wherein most commonly seen application is known for light
Other read write line or optical label read write line.
However, in existing light identification read write line or optical label read write line across resistance amplifying circuit exist corner frequency it is high,
The problem of loop is unstable, seriously reduces the optical signal detecting performance of light identification read write line or optical label read write line.
Utility model content
The utility model embodiment provides a kind of LID read write lines and its across resistance amplifying circuit, can significantly reduce and be put across resistance
The accounting scope of the corner frequency, the effectively DC component that control is offset of big circuit, improves the stability of loop.
The utility model embodiment on the one hand provide it is a kind of applied to LID read write lines across resistance amplifying circuit, it include across
Hinder amplification module, tail current pipe module, common source amplification module, at least one voltage control module and with the voltage control module
At least one corresponding current control module of quantity;
It is described across the signal input part of resistance amplification module and the signal output part of the tail current pipe module and each described
The output end of current control module is connected to the signal output part of the photodiode circuit of the LID read write lines altogether, described across resistance
The signal output part of amplification module is the output end across resistance amplifying circuit, the feedback signal output across resistance amplification module
End is total to the feedback signal input terminal of the common source amplification module and the first voltage input of each voltage control module
Connect, the power end of the power end of the tail current pipe module and the common source amplification module, each voltage control module
Power end and the input of each current control module are connected to external power source, the controlled termination of the tail current pipe module altogether
The control end of the common source amplification module, the signal input part of the common source amplification module connects each voltage control module
Signal output part, the equal input reference voltage signal of reference voltage end of each voltage control module, each voltage control
The control end of molding block corresponds to the controlled end of one current control module of connection;
It is described that the sensor current signal that the photodiode circuit is exported is converted into voltage signal across resistance amplification module
And exported after being amplified, and DC component in the sensor current signal is respectively to the common source amplification module and every
The individual voltage control module output voltage feedback signal;Each voltage control module according to the feedback voltage signal and
The size of the reference voltage signal, controls its corresponding each described current control module to be switched on or switched off and is put with the common source
Connection between big module, with the direct current signal exported by tail current pipe module described in the common source amplification module dynamic control
Offset the counteracting scope of the DC component in the sensor current signal.
It is preferred that, it is described to include operational amplifier, error amplifier, the first electric capacity, the second electric capacity, the across resistance amplification module
One resistance and reference voltage source;
The reverse input end and the reference voltage of the in-phase input end of the operational amplifier and the error amplifier
The positive pole in source connects altogether, and the one of the negative pole and the first resistor of the inverting input of the operational amplifier and second electric capacity
End connects altogether constitutes the signal input part across resistance amplification module, the output end of the operational amplifier and the error amplifier
In-phase input end, the positive pole of second electric capacity and the other end of the first resistor to connect composition altogether described across resistance amplification module
Signal output part, the positive pole of the output end of the error amplifier and first electric capacity connects that composition is described to amplify mould across resistance altogether
The feedback signal output of block, the negative pole ground connection of first electric capacity.
It is preferred that, the tail current pipe module includes the first N-type metal-oxide-semiconductor, the grid of the first N-type metal-oxide-semiconductor, drain electrode and
Source electrode is respectively controlled end, output end and the input of the tail current pipe module.
It is preferred that, the common source amplification module includes the second N-type metal-oxide-semiconductor and the first p-type metal-oxide-semiconductor, the second N-type MOS
The source electrode of pipe is the power end of the common source amplification module, and the grid of the second N-type metal-oxide-semiconductor is the common source amplification module
The drain electrode of control end, the source electrode of the second N-type metal-oxide-semiconductor and the first p-type metal-oxide-semiconductor connects the composition common source amplification module altogether
Signal input part, the grid of the second N-type metal-oxide-semiconductor and drain electrode connect altogether, the source ground of the first p-type metal-oxide-semiconductor.
It is preferred that, each voltage control module includes voltage comparator and SPDT is switched;
The first input end of the voltage comparator and the second input are respectively the first electricity of the voltage control module
Input and second voltage input are pressed, the output end of the voltage comparator connects with the controlled end that the SPDT is switched
Connect, the first connection end, the second connection end and the 3rd connection end of the SPDT switch are respectively the voltage control mould
Control end, signal output part and the power end of block;
The voltage comparator inputs the feedback voltage signal and the reference voltage, and relatively more described feedback voltage letter
Number and the reference voltage signal voltage swing, if the voltage of the feedback voltage signal be less than or equal to the reference voltage
Signal, then the voltage comparator control current control module described in the SPDT switch connection and the external power source
Between connection, the current control module is disconnected the connection between the common source amplification module;If the feedback voltage
The voltage of signal is more than the reference voltage signal, then the voltage comparator is controlled described in the SPDT switch connection
Connection between current control module and the common source amplification module, makes the current control module disconnect and the external power source
Between connection.
It is preferred that, the SPDT switch is that single-pole double-throw relay or single pole double throw analog are switched.
It is preferred that, each current control module includes the 3rd N-type metal-oxide-semiconductor, the grid of the 3rd N-type metal-oxide-semiconductor,
Drain electrode and source electrode are respectively controlled end, output end and the input of the current control module.
The utility model embodiment also provides a kind of LID read write lines, and it includes photodiode circuit, signal transacting electricity
Road, signal transition detection circuit and it is above-mentioned across resistance amplifying circuit;
The sensor current signal output termination signal input part across resistance amplifying circuit of the photodiode circuit,
The signal output across resistance amplifying circuit terminates the first signal input part of the signal transition detection circuit, and the signal is jumped
Become the secondary signal input access reference burst signal of detection circuit, the signal output termination of the signal transition detection circuit
The signal input part of the signal processing circuit;
The photodiode circuit obtains the optical signal of optical label transmitting or reflection and is converted to sensor current signal;Institute
The DC component offset across resistance amplifying circuit in the sensor current signal is stated, the sensing after DC component will be counteracted
Current signal is converted to voltage signal and exported after being amplified to the signal transition detection circuit, the signal transition detection
The lasting bound-time of the voltage signal exported described in electric circuit inspection across resistance amplifying circuit, and the lasting jump is being detected every time
When the change time is more than preset time, a pulse voltage signal is exported to the signal processing circuit, the signal processing circuit
Treatment Analysis is carried out to the pulse voltage signal and obtains data signal.
It is preferred that, the signal transition detection circuit includes signal time delay device and XOR device, the signal delayer
Second input of the input of part and the XOR device is connected to the signal output part across resistance amplifying circuit, the letter altogether
The first input end of the output termination XOR device of number time delay device, the output of the XOR device is terminated at the signal
Manage the signal input part of circuit.
It is preferred that, the photodiode circuit includes photodiode, and the output end of the photodiode is the light
The sensor current signal output end of electric diode circuit, the input end grounding of photodiode.
The utility model embodiment is connected to the common source amplification module of external power source by setting altogether with tail current pipe module, can
To significantly reduce the corner frequency across resistance amplifying circuit, and it is switched on or switched off by voltage control module control electric current control module
With the connection between common source amplification module, common source amplification module is set to control the electric current model of the direct current signal of tail current pipe module output
Enclose, so as to by controlling the current range of the direct current signal effectively to control the counteracting of the DC component in sensor current signal
Scope, can effectively control the accounting scope of DC component offset, improve the stability of loop.
Brief description of the drawings
, below will be to needed for embodiment description in order to illustrate more clearly of the technical scheme in the utility model embodiment
The accompanying drawing to be used is briefly described, it should be apparent that, drawings in the following description are some embodiments of the present utility model,
For those of ordinary skill in the art, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings
Other accompanying drawings.
Fig. 1 is the electrical block diagram of the prior art across resistance amplifying circuit that the utility model is provided;
Fig. 2 is the structured flowchart across resistance amplifying circuit that one embodiment of the present utility model is provided;
Fig. 3 is the electrical block diagram across resistance amplifying circuit that one embodiment of the present utility model is provided;
Fig. 4 is the electrical block diagram across resistance amplifying circuit that another implementation of the present utility model is provided;
Fig. 5 is the structured flowchart for the LID read write lines that one embodiment of the present utility model is provided;
Fig. 6 is the concrete structure block diagram for the LID read write lines that one embodiment of the present utility model is provided.
Embodiment
In order that those skilled in the art more fully understand the utility model scheme, it is real below in conjunction with the utility model
The accompanying drawing in example is applied, the technical scheme in the utility model embodiment is explicitly described, it is clear that described embodiment
It is the embodiment of the utility model part, rather than whole embodiments.Based on the embodiment in the utility model, this area
The every other embodiment that those of ordinary skill is obtained under the premise of creative work is not made, should all belong to this practicality
Novel protected scope.
Term " comprising " and their any changes in specification and claims of the present utility model and above-mentioned accompanying drawing
Shape, it is intended that covering is non-exclusive to be included.Process, method or system, product for example comprising series of steps or unit or
The step of equipment is not limited to list or unit, but alternatively also include the step of do not list or unit, or it is optional
Ground is also included for the intrinsic other steps of these processes, method, product or equipment or unit.In addition, term " first ", " the
Two " and " the 3rd " etc. are to be used to distinguish different objects, not for description particular order.
If Fig. 1 is the electrical block diagram commonly used in the prior art across resistance amplifying circuit.Should be across resistance amplifying circuit bag
Include metal-oxide-semiconductor Mctl, operational amplifier G1, error amplifier EA, reference voltage source Vref, electric capacity Cf, resistance RfWith electric capacity Cm, metal-oxide-semiconductor
MctlSource electrode access external power source VDD, gate error amplifier EA output end, drain electrode and photodiode PD output end
With operational amplifier G1 inverting input, operational amplifier G1 in-phase input end and error amplifier EA inverting input
With reference voltage source VrefOutput end connect altogether, electric capacity CfWith resistance RfParallel connection is connected to operational amplifier after constituting filter circuit
Between G1 inverting input and output end, error amplifier EA output end passes through electric capacity CmGround connection, photodiode PD's
Input end grounding.
It is above-mentioned across resistance amplifying circuit transmission function be:
Wherein, L (s) is loop gain;
According to formulaCalculating is obtained
Wherein ADCIt is error amplifier EA low-frequency gain, ωp1=1/Ro2CmIf, RfADCωp1> > 1, the then circuit
The high pass corner frequency ω of frequency responseHP=RfADCωp1gmctl=RfADCgmctl/Ro2Cm;
According to ωHPCalculation formula calculate understand, to make ωHPLess than tens hertz, then need electric capacity Cm capacitance
Cm increases to nF (nanofarad) magnitude, but be due to nanofarad magnitude electric capacity volume it is larger be difficult to integrate into chip, so passing through
Increase electric capacity Cm capacitance is unpractical come the corner frequency for reducing whole circuit.
In order to solve the above problems, as shown in Fig. 2 one embodiment of the present utility model provides a kind of across resistance amplifying circuit
100, it is applied to LID read write lines, and it is included across hindering amplification module 10, tail current pipe module 20, common source amplification module 30, at least
One voltage control module 40 and at least one current control module 50 corresponding with the quantity of voltage control module 40.
What the present embodiment was provided is across the annexation in resistance amplifying circuit 100 between each module:
Across the signal input part and the signal output part and each current control of tail current pipe module 20 of resistance amplification module 10
The output end of module 50 is connected to the signal output part of the photodiode circuit 201 of LID read write lines altogether, across resistance amplification module 10
Signal output part is the output end vo across resistance amplifying circuit 100, is put across the feedback signal output of resistance amplification module 10 with common source
The big feedback signal input terminal of module 30 and the first voltage input of each voltage control module 40 connect altogether, tail current pipe module
20 power end and the power end of common source amplification module 30, the power end of each voltage control module 40 and each current control mould
The input of block 50 is connected to external power source VDD altogether, the control end of the controlled termination common source amplification module 30 of tail current pipe module 20,
The signal input part of common source amplification module 30 connects the signal output part of each voltage control module 40, each voltage control module 40
The equal input reference voltage signal Vth of reference voltage end.
The control end of each voltage control module 40 corresponds to the controlled end of one current control module 50 of connection.
In a particular application, photodiode circuit 201 can be single photodiode or by multiple photoelectricity
The photodiode array of diode composition;Signal processing circuit 202 can specifically pass through universal integrated circuit, such as CPU
(Central Processing Unit, central processing unit), or pass through ASIC (Application Specific
Integrated Circuit, application specific integrated circuit) realize.
In the present embodiment, a voltage control module 40 and a current control module 50 illustrate only.
The present embodiment provided across resistance amplifying circuit 100 operation principle be:
The sensor current signal that photodiode circuit is exported is converted into voltage signal across resistance amplification module and put
Exported after big, and the DC component in sensor current signal is defeated to common source amplification module and each voltage control module respectively
Go out voltage feedback signal;Each voltage control module controls its right according to the size of feedback voltage signal and reference voltage signal
The each current control module answered is switched on or switched off the connection between common source amplification module, to pass through light source amplification module dynamic
Control the counteracting scope of the direct current offset signal DC component of tail current pipe module output.
In a particular application, voltage control module and corresponding current control module can suitably be increased and decreased according to actual needs
Quantity, to improve the stability of circuit, it is ensured that voltage control module can pass through current control module control amplification module pair
It is controlled across the direct current signal of resistance amplification module output.
The utility model embodiment is connected to the common source amplification module of external power source by setting altogether with tail current pipe module, can
To significantly reduce the corner frequency across resistance amplifying circuit, and it is switched on or switched off by voltage control module control electric current control module
With the connection between common source amplification module, common source amplification module is set to control the electric current model of the direct current signal of tail current pipe module output
Enclose, so as to by controlling the current range of the direct current signal effectively to control the counteracting of the DC component in sensor current signal
Scope, can be so that the accounting scope for the DC component that effective control is offset improves the stability of loop.
As shown in figure 3, in one embodiment of the present utility model, across resistance amplification module 10 include operational amplifier G1,
Error amplifier EA, the first electric capacity Cm, the second electric capacity Cf, first resistor RfWith reference voltage source Vref;
Operational amplifier G1 in-phase input end and error amplifier EA reverse input end and reference voltage source VrefJust
Extremely connect altogether, operational amplifier G1 inverting input and the second electric capacity CfNegative pole and first resistor RfOne end connect altogether composition across
Hinder the signal input part of amplification module 10, operational amplifier G1 output end and error amplifier EA in-phase input end, second
Electric capacity CfPositive pole and first resistor RfThe other end connect altogether constitute across resistance amplification module 10 signal output part VO, error amplification
Device EA output end and the first electric capacity CmPositive pole connect altogether constitute across resistance amplification module 10 feedback signal output, the first electric capacity
CmNegative pole ground connection.
In the present embodiment, photodiode circuit is photodiode PD, its input end grounding.
As shown in figure 3, in the present embodiment, tail current pipe module 20 includes the first N-type metal-oxide-semiconductor Mctl, the first N-type metal-oxide-semiconductor
MctlGrid, drain electrode and source electrode be respectively tail current pipe module 20 controlled end, output end and input.
As shown in figure 3, in the present embodiment, common source amplification module 30 includes the second N-type metal-oxide-semiconductor M1With the first p-type metal-oxide-semiconductor M2,
Second N-type metal-oxide-semiconductor M1Source electrode be common source amplification module power end, the second N-type metal-oxide-semiconductor M1Grid be common source amplification module
Control end, the second N-type metal-oxide-semiconductor M1Source electrode and the first p-type metal-oxide-semiconductor M2Drain electrode connect altogether constitute common source amplification module signal
Input, the second N-type metal-oxide-semiconductor M1Grid and drain electrode connect altogether, the first p-type metal-oxide-semiconductor M2Source ground.
As shown in figure 3, in the present embodiment, each voltage control module 40 includes voltage comparator cmp1 and hilted broadsword is double
Throw type switch Vgctl1。
Voltage comparator cmp1 first input end Vg.M2It is respectively voltage control module 40 with the second input Vth1
First voltage input and second voltage input, voltage comparator cmp1 output end and SPDT switch Vgctl1By
Control end 4 is connected, SPDT switch Vgctl1The first connection end 1, the second connection end 2 and the 3rd connection end 3 be respectively voltage
Control end, signal output part and the power end of control module 40.
The operation principle of voltage control module 40 is:
Voltage comparator input feedback voltage signal and reference voltage, and compare feedback voltage signal and reference voltage signal
Voltage swing, if the voltage of feedback voltage signal is less than or equal to reference voltage signal, voltage comparator control hilted broadsword is double
The connection between type switch connection current control module and external power source is thrown, current control module is disconnected and common source amplification module
Between connection;If the voltage of feedback voltage signal is more than reference voltage signal, voltage comparator control SPDT is opened
The connection between turn-on current control module and common source amplification module is closed, current control module is disconnected between external power source
Connection.
In a particular application, SPDT switch is that single-pole double-throw relay or single pole double throw analog are switched;Hilted broadsword is double
Throwing type switch can switch by two single-pole single-throw(SPST types of equivalence replacement.
As shown in figure 3, in the present embodiment, each current control module 50 includes the 3rd N-type metal-oxide-semiconductor Mctl1, the 3rd N
Type metal-oxide-semiconductor Mctl1Grid, drain electrode and source electrode be respectively current control module 50 controlled end, output end and input.
Shown in Fig. 3 across resistance amplifying circuit transmission function be:
The high pass corner frequency of its frequency response
It can be significantly reduced across resistance amplifying circuit high pass corner frequency by adjusting metal-oxide-semiconductor M1, M2 mutual conductance gm1 and gm2,
Such as gm2/gm1=1/200 then electric capacity CmCapacitance can reduce by 200 times, greatly reduce needed for electric capacity area.Pass through
Voltage comparator cmp1 automatically controls metal-oxide-semiconductor Mctl1 and metal-oxide-semiconductor Mctl2 switch, adjust automatically metal-oxide-semiconductor Mctl breadth length ratio,
The counteracting scope for the counteracting DC component that can be multiplied turn avoid due to not caused enough the loop of metal-oxide-semiconductor M2 grid voltages voltage
Stability problem.
As shown in figure 4, in one embodiment of the present utility model, in one embodiment of the present utility model, across resistance
Amplifying circuit 100 includes two voltage control modules 40 and two current control modules 50.One of voltage control module bag
Include first voltage comparator cmp1 and the first SPDT switch Vgctl1, its attachment structure is referring to Fig. 3, the control of another voltage
Module includes second voltage comparator cmp2 and the second SPDT switch Vgctl2, the circuit connection of two voltage control modules
Structure is identical.One of current control module includes the 3rd N-type metal-oxide-semiconductor Mctl1, and its attachment structure is referring to Fig. 3, another electricity
Flow control module includes the 4th N-type metal-oxide-semiconductor Mctl2, and the circuit connection structure of two current control modules is identical.
The operation principle of voltage control module shown in Fig. 4 and current control module is:
As metal-oxide-semiconductor M2 grid voltages Vg.M2During than reference voltage Vth1 and reference voltage Vth2 low, metal-oxide-semiconductor Mctl1 and metal-oxide-semiconductor
Mctl2 grid is by respectively by connecing VDD, metal-oxide-semiconductor Mctl1 and metal-oxide-semiconductor Mctl2 shut-off, with photodiode PD direct currents
The increase metal-oxide-semiconductor M2 of component grid voltage Vg,M2Also corresponding rise, when grid voltage exceedes reference voltage Vth1 or reference voltage Vth2,
Metal-oxide-semiconductor Mctl1 or metal-oxide-semiconductor Mctl2 grid voltages meet bias voltage Vgctl, phase by the SPDT switch each connected respectively
That answers adds the breadth length ratio of current control module, can improve the DC offset of circuit with Self Adaptive Control metal-oxide-semiconductor M2 grid voltages
Scope and stability.
As shown in figure 5, one embodiment of the present utility model also provides a kind of LID read write lines, it includes photodiode
Circuit 201, signal processing circuit 202, signal transition detection circuit 203 and across resistance amplifying circuit 100.
The sensor current signal output of photodiode circuit 201 terminates the signal input part across resistance amplifying circuit 100, across
Hinder the first signal input part of the signal output termination signal transition detection circuit 203 of amplifying circuit 100, transition detection circuit
203 secondary signal input Mode_EN access reference burst signals, the signal output termination of signal transition detection circuit 203
The signal input part of signal processing circuit 202.
In the present embodiment, photodiode circuit is photodiode, and the output end of the photodiode is the pole of photoelectricity two
The sensor current signal output end of pipe circuit, the input end grounding of photodiode.
The operation principle of LID read write lines that the present embodiment is provided is:
Photodiode circuit obtains the optical signal of optical label transmitting or reflection and is converted to sensor current signal;Put across resistance
Big circuit offsets the DC component in sensor current signal, and the sensor current signal counteracted after DC component is converted into electricity
Press signal and exported after being amplified and give signal transition detection circuit, signal transition detection electric circuit inspection is across resistance amplifying circuit output
Voltage signal lasting bound-time, and detect every time lasting bound-time more than preset time when, export an arteries and veins
Voltage signal is rushed to signal processing circuit, signal processing circuit pulse voltage signal carries out Treatment Analysis and obtains data signal.
In a particular application, if the optical label that LID read write lines are read is passive label, optical label does not receive enough
During energy, then can not reflected light signal or reflection optical signal it is more faint.Therefore, in order to overcome signal processing circuit can not
The problem of detecting the small-signal of optical label reflection, can be detected by increasing signal transition detection circuit across resistance amplification electricity
The change of the signal of road output, response is refused when the signal of its output is less than certain pulsewidth.
As shown in fig. 6, in one embodiment of the present utility model, signal transition detection circuit 203 specifically includes signal
Delay circuit 2031 and XOR circuit 2032, the input of signal delay circuit 2031 and the second input of XOR circuit 2032
The signal output part across resistance amplifying circuit 100 is connected to altogether, the output termination XOR circuit 2032 of signal delay circuit 2031
First input end, the output termination signal processing circuit 202 of XOR circuit 2032.
Signal delay circuit is specifically for realizing signal stabilization function, when the signal across resistance amplifying circuit output is less than necessarily
Response is refused during pulsewidth, XOR circuit carries out logic specifically for the pulsewidth size to the signal across resistance amplifying circuit output and sentenced
It is disconnected.
The present embodiment provide LID read write lines can active detecting optical label transmitting or reflection optical signal, and detection
To processing generation data signal is carried out during signal to signal in time, sensitivity is high, and can be not responding to optical label reflection automatically
Or the small-signal of transmitting, it is to avoid the data signal of output error, the accuracy of optical signal identification can be effectively improved.
In other embodiment of the present utility model, it can be equally applicable in LID labels across resistance amplifying circuit.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Any modifications, equivalent substitutions and improvements made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (10)
1. it is a kind of applied to LID read write lines across resistance amplifying circuit, it is characterised in that it is described to include putting across resistance across resistance amplifying circuit
Big module, tail current pipe module, common source amplification module, at least one voltage control module and with the voltage control module quantity
At least one corresponding current control module;
The signal input part across resistance amplification module and the signal output part and each electric current of the tail current pipe module
The output end of control module is connected to the signal output part of the photodiode circuit of the LID read write lines altogether, described across resistance amplification
The signal output part of module is the output end across resistance amplifying circuit, the feedback signal output across resistance amplification module with
The feedback signal input terminal of the common source amplification module and the first voltage input of each voltage control module connect altogether, institute
State the power end of tail current pipe module and the power end of the common source amplification module, the power end of each voltage control module
External power source is connected to altogether with the input of each current control module, and the controlled termination of the tail current pipe module is described common
The control end of source amplification module, the signal that the signal input part of the common source amplification module connects each voltage control module is defeated
Go out end, the equal input reference voltage signal of reference voltage end of each voltage control module, each voltage control module
Control end correspond to connection one current control module controlled end;
It is described the sensor current signal that the photodiode circuit is exported is converted into voltage signal to go forward side by side across resistance amplification module
Exported after row amplification, and the DC component in the sensor current signal is respectively to the common source amplification module and each institute
State voltage control module output voltage feedback signal;Each voltage control module is according to the feedback voltage signal and described
The size of reference voltage signal, controls its corresponding each described current control module to be switched on or switched off and amplifies mould with the common source
Connection between block, with the direct current offset signal exported by tail current pipe module described in the common source amplification module dynamic control
The counteracting scope of DC component in the sensor current signal.
2. as claimed in claim 1 applied to LID read write lines across resistance amplifying circuit, it is characterised in that described across resistance amplification
Module includes operational amplifier, error amplifier, the first electric capacity, the second electric capacity, first resistor and reference voltage source;
The reverse input end and the reference voltage source of the in-phase input end of the operational amplifier and the error amplifier
Positive pole is connect altogether, and the inverting input of the operational amplifier is total to the negative pole of second electric capacity and one end of the first resistor
Connect and constitute the signal input part across resistance amplification module, the output end of the operational amplifier is same with the error amplifier
The other end of phase input, the positive pole of second electric capacity and the first resistor connects altogether constitutes the letter across resistance amplification module
The positive pole of number output end, the output end of the error amplifier and first electric capacity connect altogether constitute it is described across resistance amplification module
Feedback signal output, the negative pole ground connection of first electric capacity.
3. as claimed in claim 1 applied to LID read write lines across resistance amplifying circuit, it is characterised in that the tail current pipe
Module includes the first N-type metal-oxide-semiconductor, and grid, drain electrode and the source electrode of the first N-type metal-oxide-semiconductor are respectively the tail current pipe module
Controlled end, output end and input.
4. as claimed in claim 1 applied to LID read write lines across resistance amplifying circuit, it is characterised in that the common source amplification
Module includes the second N-type metal-oxide-semiconductor and the first p-type metal-oxide-semiconductor, and the source electrode of the second N-type metal-oxide-semiconductor is the common source amplification module
Power end, the grid of the second N-type metal-oxide-semiconductor is the control end of the common source amplification module, the source of the second N-type metal-oxide-semiconductor
Pole and the drain electrode of the first p-type metal-oxide-semiconductor connect the signal input part for constituting the common source amplification module, the second N-type MOS altogether
The grid of pipe and drain electrode connect altogether, the source ground of the first p-type metal-oxide-semiconductor.
5. as claimed in claim 1 applied to LID read write lines across resistance amplifying circuit, it is characterised in that each voltage
Control module includes voltage comparator and SPDT is switched;
The first input end of the voltage comparator and the second input are respectively that the first voltage of the voltage control module is defeated
Enter end and second voltage input, the controlled end that the output end of the voltage comparator is switched with the SPDT is connected,
The first connection end, the second connection end and the 3rd connection end of the SPDT switch are respectively the voltage control module
Control end, signal output part and power end;
The voltage comparator inputs the feedback voltage signal and the reference voltage, and relatively more described feedback voltage signal and
The voltage swing of the reference voltage signal, if the voltage of the feedback voltage signal is believed less than or equal to the reference voltage
Number, then the voltage comparator control current control module and the external power source described in the SPDT switch connection it
Between connection, the current control module is disconnected the connection between the common source amplification module;If the feedback voltage letter
Number voltage be more than the reference voltage signal, then the voltage comparator controls electricity described in the SPDT switch connection
Connection between flow control module and the common source amplification module, make the current control module disconnect with the external power source it
Between connection.
6. as claimed in claim 5 applied to LID read write lines across resistance amplifying circuit, it is characterised in that the single-pole double throw
Type switch is that single-pole double-throw relay or single pole double throw analog are switched.
7. as claimed in claim 1 applied to LID read write lines across resistance amplifying circuit, it is characterised in that each electric current
Control module includes the 3rd N-type metal-oxide-semiconductor, and grid, drain electrode and the source electrode of the 3rd N-type metal-oxide-semiconductor are respectively the electric current control
Controlled end, output end and the input of molding block.
8. a kind of LID read write lines, it is characterised in that the LID read write lines include photodiode circuit, signal processing circuit,
Signal transition detection circuit and as described in any one of claim 1~7 across resistance amplifying circuit;
The sensor current signal output termination signal input part across resistance amplifying circuit of the photodiode circuit, it is described
The first signal input part of the signal transition detection circuit, the signal saltus step inspection are terminated across the signal output of resistance amplifying circuit
The secondary signal input access reference burst signal of slowdown monitoring circuit, the signal output termination of the signal transition detection circuit is described
The signal input part of signal processing circuit;
The photodiode circuit obtains the optical signal of optical label transmitting or reflection and is converted to sensor current signal;It is described across
Hinder amplifying circuit and offset DC component in the sensor current signal, the induced-current after DC component will be counteracted
Signal is converted to voltage signal and exported after being amplified to the signal transition detection circuit, the signal transition detection circuit
The lasting bound-time of the detection voltage signal across resistance amplifying circuit output, and when detecting the lasting saltus step every time
Between when being more than preset time, export one pulse voltage signal to the signal processing circuit, the signal processing circuit is to institute
State pulse voltage signal progress Treatment Analysis and obtain data signal.
9. LID read write lines as claimed in claim 8, it is characterised in that the signal transition detection circuit is delayed including signal
Second input of device and XOR device, the input of the signal time delay device and the XOR device be connected to altogether it is described across
Hinder the signal output part of amplifying circuit, the first input end of the output termination XOR device of the signal time delay device, institute
State the signal input part of the output termination signal processing circuit of XOR device.
10. LID read write lines as claimed in claim 8, it is characterised in that the photodiode circuit includes the pole of photoelectricity two
Pipe, the output end of the photodiode is the sensor current signal output end of the photodiode circuit, photodiode
Input end grounding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720046430.6U CN206541309U (en) | 2017-01-16 | 2017-01-16 | A kind of LID read write lines and its across resistance amplifying circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720046430.6U CN206541309U (en) | 2017-01-16 | 2017-01-16 | A kind of LID read write lines and its across resistance amplifying circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206541309U true CN206541309U (en) | 2017-10-03 |
Family
ID=59938862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720046430.6U Active CN206541309U (en) | 2017-01-16 | 2017-01-16 | A kind of LID read write lines and its across resistance amplifying circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206541309U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106599754A (en) * | 2017-01-16 | 2017-04-26 | 深圳市傲科微创有限公司 | LID reader-writer and transresistance amplifier circuit thereof |
-
2017
- 2017-01-16 CN CN201720046430.6U patent/CN206541309U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106599754A (en) * | 2017-01-16 | 2017-04-26 | 深圳市傲科微创有限公司 | LID reader-writer and transresistance amplifier circuit thereof |
CN106599754B (en) * | 2017-01-16 | 2023-08-11 | 深圳市傲科光电子有限公司 | LID reader-writer and transimpedance amplifying circuit thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100186820B1 (en) | Temperature compensated apd detector bias and transimpedance amplifier circuitry for laser range finders | |
CN102498406B (en) | High linear fast peak detector | |
CN105684304B (en) | Trans-impedance amplifier circuit | |
CN104296606B (en) | A kind of laser fuze receives system | |
CA2681765A1 (en) | Double quench circuit for an avalanche current device | |
CN105282460A (en) | Enhanced dynamic range reading method and circuit having offset cancellation | |
CN201854007U (en) | High-precision overcurrent protection circuit | |
CN202772843U (en) | Long term evolution (LTE) frequency range power amplifier protecting module | |
CN106841749A (en) | One kind realizes two-way high-side current detection circuit using single amplifier | |
CN105811761A (en) | Current sampling circuit and boost circuit integrated with current sampling circuit | |
CN107681984A (en) | A kind of millimeter wave fast pulse reflects excessive real-time protection circuit and its guard method | |
CN206541309U (en) | A kind of LID read write lines and its across resistance amplifying circuit | |
CN113300205B (en) | Fiber laser protection system and device | |
CN106599754A (en) | LID reader-writer and transresistance amplifier circuit thereof | |
CN103441471A (en) | Over-current protection circuit of three-way output DC/DC converter | |
US20050213270A1 (en) | Optical receiver | |
US9379675B2 (en) | Power detector with overdrive detection | |
CN106056052B (en) | A kind of fingerprint collecting circuit | |
CN102244499A (en) | High-sensitivity front-end circuit of transimpedance amplifier (TIA) | |
CN111106867A (en) | Detection module suitable for continuous variable quantum random number generation | |
CN105222900B (en) | Infrared focal plane array reading circuit | |
CN206595997U (en) | Light shifter | |
CN207301140U (en) | The urea pump detection device resetted with overcurrent and overload | |
US10965247B2 (en) | Apparatus and method for measuring one or more characteristics of one or more photovoltaic cells | |
CN204613276U (en) | A kind of peak-detector circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200826 Address after: 518000 2602, building 3, Chongwen Park, Zhiyuan, No. 3370, Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN ALUKSEN OPTOELECTRONICS Co.,Ltd. Address before: Longhua new city streets and Cameron road Mei Road 518000 Guangdong city of Shenzhen province intersection Guanghao international center block A 20H Patentee before: SHENZHEN ALUKSEN Co.,Ltd. |