CN206538474U - A kind of differential mixed type chemical vapor phase growing apparatus - Google Patents
A kind of differential mixed type chemical vapor phase growing apparatus Download PDFInfo
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- CN206538474U CN206538474U CN201720273705.XU CN201720273705U CN206538474U CN 206538474 U CN206538474 U CN 206538474U CN 201720273705 U CN201720273705 U CN 201720273705U CN 206538474 U CN206538474 U CN 206538474U
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- runner
- sprues
- runners
- chemical vapor
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Abstract
The utility model discloses a kind of differential mixed type chemical vapor phase growing apparatus, it is made up of casing, runner plate, insulated enclosure pad, reative cell, pillar, pedestal, heating system and radio system.Runner plate has two gas accesses, two kinds of different reacting gas can be respectively enterd, two kinds of gases are evenly distributed in the space of flow field respectively in the flow field of runner plate after differential shunting action, and two kinds of gases after shunting can be mixed respectively, be sprayed after mixing through shower nozzle.The hybrid runner of the utility model differential can improve the uniformity of gas mixing and the uniformity of gas distribution, make chemical vapour deposition film evenly, eliminate gas mixer, simplify equipment；Using electromagnetic induction heating mode, the rate of heat addition is fast, and improves the utilization rate of electric energy, reduces cost；In addition, the utility model chemical vapor deposition unit can close an entrance for the reacting gas mixed, entered by an entrance, can equally improve gas distribution uniformity.
Description
Technical field
The invention belongs to the field of being vapor-deposited, more particularly to a kind of differential mixed type chemical vapor phase growing apparatus.
Background technology
For on object formed film CVD method be generally divided into physical vapour deposition (PVD) (PVD) method (for example,
Sputtering) and chemical vapor deposition (CVD) method, it is special with the physics of the physical characteristic of sedimentary origin and thin-film material in PVD methods
Property identical mode forms film, different with the physical characteristic of thin-film material with the physical characteristic of sedimentary origin in CVD method
Mode forms film using chemical reaction.Because the uniformity and step coverage of PVD methods composition or thickness are not so good as CVD side
Method, therefore generally more use CVD method.
CVD method includes aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (LPCVD) and plasma
Strengthen chemical vapor deposition (PECVD) etc..In CVD method, because PECVD methods can realize low temperature depositing, and film forming
Speed is fast, therefore PECVD methods are used widely.PECVD methods are to be will be implanted into using microwave or radio frequency in reaction chamber
Reacting gas is ionized so that reacting gas is in plasmoid, and plasma chemistry activity is very strong, it is easy to occur anti-
Should, go out desired film in deposition on substrate.
Thin film deposition processes are it is crucial that deposition film is uniform, and researcher proposes a large amount of improve to this and seen
Point.For uniform deposition film, it is uniformly distributed reacting gas or plasma plays very important effect.Therefore, it is perhaps intercalation into
Etc. a kind of patent of invention entitled " device for chemical vapor deposition " (201110280169.3) application is disclosed, pass through one
The gas diffusion part of taper is planted, the dispersing uniformity of gas is improved, so as to improve the uniformity of deposition film.This gas point
The reacting gas dissipated in method is spread from centre to surrounding, and gas flow is open, it is impossible to ensure that gas is uniformly dispersed, and this
The method of kind requires that reacting gas carries out premixing processing before vapor phase growing apparatus is entered, and improves the complexity of device.In addition,
For the reacting gas easily reacted under normal temperature condition, mixing in advance easily causes gas antedating response, causes blocking
And influence deposition effect.
The content of the invention
It is an object of the invention to improve existing chemical deposition device gas dispersion effect, simplifying device, there is provided one kind is micro-
Divide mixed type chemical vapor phase growing apparatus.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, by casing, runner plate, insulated enclosure pad, reaction
Room, pillar, pedestal, heating system and radio system composition；The reative cell is the reaction compartment for carrying out chemical vapor deposition；Stream
Guidance tape is arranged on above reative cell, and runner plate inner flow passage is shunted by A entrances, B entrances, A sprues, B sprues, A runners, B
Road, A branch flow passages, B branch flow passages, collect runner, mixing runner and shower nozzle composition；The electrode of radio system is arranged on runner plate
Side；Casing is located at below runner plate, and itself and runner plate institute encircling space are the reaction compartment, and the bottom surface of casing is provided with
Multiple aspirating holes of even arrangement, aspirating hole is connected with exhaust tube, and is communicated to air extractor；Insulated enclosure pad upper surface and
Lower surface is contacted with runner plate and casing respectively, and insulated enclosure pad, runner plate and casing are fixed；Pedestal is located in reative cell,
By upright supports；Substrate is placed above pedestal, substrate can be used for deposition film or place product to be deposited.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, A entrances and the B entrances of the runner plate are located at runner
The both sides of plate, A entrances are connected with A sprues, and B entrances are connected with B sprues, and A sprues be arranged in parallel with B sprues；A main flows
Road is connected with multiple A runners, and each A runners are vertical with A sprues, and B sprues are connected with multiple B runners, each B runners
It is vertical with B sprues, each A runners and the cross arrangement that each B runners are " A-B-A-B " formula；Each A runners respectively with it is many
Individual A branch flow passages connection, each B runners are connected with multiple B branch flow passages respectively, and corresponding each A branch flow passages are collecting with B branch flow passages
Runner converges, and respectively collects flow passage mixing runner, mixes flow passage shower nozzle.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the A sprues of the runner plate and breaking for B sprues
Face depth is more than the section depth of each A runners and each B runners.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the mixing runner cross sectional shape of the runner plate is by square
Shape becomes round, and area of section reduces rapidly.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the runner plate can be by upper plate, middle plate, lower plate three
Block metallic plate assembles, and upper plate, middle plate, lower plate are bolted；Upper plate inner flow passage is A entrances, B entrances, A runners, B point
The top half of runner and A sprues and B sprues；Middle plate inner flow passage is A branch flow passages, B branch flow passages and A sprues and B
The latter half of sprue；Lower plate inner flow passage is to collect runner, mixing runner and shower nozzle.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the runner plate can also be by metal 3D printing method
Machine-shaping.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, its heating system is electromagnetic induction heating mode, plus
Heat coil is located in pedestal, and heating coil arrangement mode is that annular arrangement or dot matrix are arranged.
From above technical scheme, the beneficial effects of the invention are as follows：
The hybrid runner of differential can improve the uniformity of gas mixing and the uniformity of gas distribution, make chemical vapor deposition
Product film evenly, eliminates gas mixer, simplifies equipment；Using electromagnetic induction heating mode, the rate of heat addition is fast, and
The utilization rate of electric energy is improved, cost is reduced；In addition, chemical vapor deposition unit of the present invention is anti-for what is mixed
Gas is answered, an entrance can be closed, is entered by an entrance, can equally improve gas distribution uniformity.
Brief description of the drawings
Fig. 1 is a kind of differential mixed type chemical vapor phase growing apparatus structural representation of the invention；
Fig. 2 is a kind of differential mixing runner structural representation of differential mixed type chemical vapor phase growing apparatus of the invention；
Fig. 3 is a kind of differential mixing runner front view of differential mixed type chemical vapor phase growing apparatus of the invention；
Fig. 4 is a kind of differential mixing runner top view of differential mixed type chemical vapor phase growing apparatus of the invention；
Fig. 5 for a kind of differential mixed type chemical vapor phase growing apparatus of the invention differential mixing runner branch flow passage to shower nozzle knot
Composition.
Fig. 6 is a kind of a kind of combining structure of differential mixed type chemical vapor phase growing apparatus runner plate of the invention.
In figure：1. pillar, 2. exhaust tubes, 3. reative cells, 4. casings, 5. shower nozzles, 6. insulated enclosure pads, 7. runner plates,
8.A entrances, 9. air inlet pipe, 10. runners, 11. electrodes, 12.B entrances, 13. substrates, 14. heating coils, 15. pedestals, 16. pumpings
Device, 17.A sprues, 18.A runners, 19.A branch flow passages, 20. collect runner, 21. mixing runners, 22.B sprues, 23.B
Runner, 24.B branch flow passages, 25. upper plates, plate, 27. lower plates, 28. bolts in 26..
Embodiment
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, as shown in figure 1, close by casing 4, runner plate 7, insulation
Gasket 6, reative cell 3, pillar 1, pedestal 15, heating system and radio system composition；The reative cell 3 is progress chemical gaseous phase
The reaction compartment of deposition；Runner plate 7 is arranged on the top of reative cell 3, and the inner flow passage 10 of runner plate 7 is by A entrances 8, B entrances 12, A main flows
Road 17, B sprues 22, A runners 18, B runners 23, A branch flow passages 19, B branch flow passages 24, collect runner 20, mixing runner 21
Constituted with shower nozzle 5；The electrode 11 of radio system is arranged on the top of runner plate 7；Casing 4 is located at the lower section of runner plate 7, itself and runner plate
7 encircling spaces are the reaction compartment 3, and the bottom surface of casing 4 is provided with the multiple aspirating holes uniformly arranged, and aspirating hole is with taking out
Tracheae 2 is connected, and is communicated to air extractor 16；The upper and lower surface of insulated enclosure pad 6 respectively with runner plate 7 and casing
4 contacts, it is fixed between insulated enclosure pad 6, runner plate 7 and casing 6；Pedestal 15 is located in reative cell 3, is supported by column 1；Base
Substrate 13 is placed in the top of seat 15, and substrate can be used for deposition film or place product to be deposited.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, as in Figure 2-4, the A entrances 8 of the runner plate 7
It is located at the both sides of runner plate 7 with B entrances 12, A entrances 8 are connected with A sprues 17, and B entrances 12 are connected with B sprues 22, A main flows
Road 17 and B sprues 22 be arranged in parallel；A sprues 17 are connected with multiple A runners 18, and each A runners 18 hang down with A sprues 17
Directly, B sprues 22 are connected with multiple B runners 23, and each B runners 23 are vertical with B sprues 22, and each A runners 18 divide with each B
Runner 23 is the cross arrangement of " A-B-A-B " formula；Each A runners 18 are connected with multiple A branch flow passages 19 respectively, each B shuntings
Road 23 is connected with multiple B branch flow passages 24 respectively, and corresponding each A branch flow passages 19 and B branch flow passages 24 converge collecting runner 20, each to converge
The connection mixing runner 21 of mass flow pathway 20, the mixing connection shower nozzle 5 of runner 21.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, A sprues 17 and the B sprues of the runner plate 7
22 section depth is more than the section depth of each A runners 18 and each B runners 22.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the cross sectional shape of mixing runner 21 of the runner plate 7
Become round by rectangle, and area of section reduces rapidly.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the runner plate 7 can by upper plate 25, middle plate 26,
27 3 pieces of metallic plates of lower plate assemble, and upper plate 25, middle plate 26, lower plate 27 are fixed by bolt 28, as shown in Figure 5；In upper plate 25
Runner is the top half of A entrances 8, B entrances 12, A runners 18, B runners 23 and A sprues 17 and B sprues 22；In
The inner flow passage of plate 26 is the latter half of A branch flow passages 19, B branch flow passages 24 and A sprues 17 and B sprues 22；Flowed in lower plate 27
Road is to collect runner 20, mixing runner 21 and shower nozzle 5.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, the runner plate 7 can also be by metal 3D printing side
Method machine-shaping.
A kind of differential mixed type chemical vapor phase growing apparatus of the present invention, its heating system is electromagnetic induction heating mode, plus
Heat coil 14 is located in pedestal, and heating coil arrangement mode is that annular arrangement or dot matrix are arranged.
Below by taking the chemical vapor deposition of silicon nitride as an example, the present invention will be described：
For a kind of differential mixed type chemical vapor phase growing apparatus of the invention that reative cell area is 1000mm × 1000mm,
The aperture of A entrances 8 and B entrances 12 is 40mm, and A sprues 17 are rectangle with the cross sectional shape of B sprues 22, and channel width 40mm is deep
35mm.A sprues 17 are connected with 15 A runners 18, and B sprues 22 are connected with 15 B runners 23, each A runners 18 with
Each cross sectional shape of B runners 23 is rectangle, the wide 30mm in square-section, deep 30mm.Each A runners 18 respectively with 15 A branch
Runner 19 is connected, and each B runners 23 are connected with 15 B branch flow passages 24 respectively, each A branch flow passages 19 and the section shape of B branch flow passages 24
Shape is rectangle, and square-section is 15mm × 20mm.Each A branch flow passages 19 are 20mm × 20mm in sectional dimension with B branch flow passages 24
The runner 20 that collects converge.Respectively collect the connection mixing runner 21 of runner 20, mix rectangle of the section of runner 21 by 20mm × 20mm
Fade to diameter 8mm circle.The connection mixing runner 21 of shower nozzle 5, is frustum shape, exit diameter is 40mm.By two
Secondary fluid course additive process, last shower nozzle 5 is each 15 arrangements of transverse and longitudinal, and the centre distance of adjacent each shower nozzle 5 is 55mm.
Before reaction is carried out, the reative cell 3 of runner plate 7 is in open state.After substrate 13 is positioned and mounted on pedestal 14,
Runner plate 7 is positioned and mounted on casing 4 and insulated enclosure pad 6 by mechanical arm or oil cylinder (not marked in figure), utilized
Air extractor 16 vacuumizes device.With silane SiH4As silicon source, with ammonia NH3As nitrogen source, silane enters from A entrances 8,
Ammonia enters from B entrances 12.The silane for being passed through A entrances 8 enters A sprues 17, and being dispersed into each A through differential shunting action shunts
Road 18, because the section depth of A sprues 17 is bigger than the section depth of A runner 18 so that silane preferentially fills after the entrance of A entrances 8
Full whole A sprues 17, afterwards into each A runners 18, so the gas inlet of each A runners 18 is more uniform.Into
The silane of each A runners 18 is under differential shunting action even into each A branch flow passages 19.The ammonia for being passed through B entrances 12 enters B master
Runner 22, each B runners 23 are dispersed into through differential shunting action, because the section depth of B sprues 22 is than the section of B runner 23
Depth is big so that ammonia is after the entrance of B entrances 12, preferentially full of whole B sprues 22, afterwards into each B runners 23, so
The gas inlet of each B runners 23 is more uniform.Into each B runners 23 ammonia under differential shunting action even into
Each B branch flow passages 24.Silane in corresponding each A branch flow passages 19 and the ammonia in each B branch flow passages 24 converge collecting runner 20, it
Enter mixed flow road 21 afterwards.Because the mixing cross sectional shape of runner 21 by rectangle is changing into circle, and area of section diminishes rapidly,
So that the simulation model for mixing gases flows in mixing runner 21 is disorderly, accelerate the mixing of silane and ammonia, mixed gas is via shower nozzle 5
Spray.Because heater is placed on pedestal 15, the temperature of runner plate 7 is not high, therefore collecting runner 20, mixing runner 21
Will not occur deposition reaction with the mixed gas in shower nozzle 5.Such a runner design so that silane can be sufficiently mixed with ammonia,
And the gas that each shower nozzle 5 sprays is evenly distributed.The mixed gas sprayed from each shower nozzle 5 occurs under the action of radio of electrode 6
Ionization, forms plasmoid.The mixed gas of plasmoid contacts the substrate after electromagnetic induction heating, progressively
Deposit, form silicon nitride film.In addition, in course of reaction, air extractor 16 can enter to the gas pressure in reative cell 3
Row control, because aspirating hole is uniformly arranged in casing, pumping is uniform, and pressure is more balanced everywhere in reative cell 3.
Claims (7)
1. a kind of differential mixed type chemical vapor phase growing apparatus, it is characterised in that：By casing, runner plate, insulated enclosure pad, anti-
Answer room, pillar, pedestal, heating system and radio system composition；The reative cell is the reaction compartment for carrying out chemical vapor deposition；
Runner plate is arranged on above reative cell, and runner plate inner flow passage is divided by A entrances, B entrances, A sprues, B sprues, A runners, B
Runner, A branch flow passages, B branch flow passages, collect runner, mixing runner and shower nozzle composition；The electrode of radio system is arranged on runner plate
Side；Casing is located at below runner plate, and itself and runner plate institute encircling space are the reaction compartment, and the bottom surface of casing is provided with
Multiple aspirating holes of even arrangement, aspirating hole is connected with exhaust tube, and is communicated to air extractor；Insulated enclosure pad upper surface and
Lower surface is contacted with runner plate and casing respectively, and insulated enclosure pad, runner plate and casing are fixed；Pedestal is located in reative cell,
By upright supports；Substrate is placed above pedestal, substrate can be used for deposition film or place product to be deposited.
2. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：The runner plate
A entrances and B entrances be located at the both sides of runner plate, A entrances are connected with A sprues, and B entrances are connected with B sprues, A sprues
It is be arranged in parallel with B sprues；A sprues are connected with multiple A runners, and each A runners are vertical with A sprues, B sprues with it is many
Individual B runners connection, each B runners are vertical with B sprues, each A runners intersecting for " A-B-A-B " formula with each B runners
Arrangement；Each A runners are connected with multiple A branch flow passages respectively, and each B runners are connected with multiple B branch flow passages respectively, corresponding
Each A branch flow passages and B branch flow passages converge collecting runner, respectively collect flow passage mixing runner, mix flow passage shower nozzle.
3. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：The runner plate
A sprues in the section depth of A runners；The section depth of B sprues is more than the section depth of B runners.
4. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：The runner plate
Mixing runner cross sectional shape become round by rectangle, and area of section reduces rapidly.
5. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：The runner plate
It can be assembled by upper plate, middle plate, three pieces of metallic plates of lower plate, upper plate, middle plate, lower plate are bolted；Upper plate inner flow passage is A
Entrance, B entrances, A runners, the top half of B runners and A sprues and B sprues；Middle plate inner flow passage be A branch flow passages,
The latter half of B branch flow passages and A sprues and B sprues；Lower plate inner flow passage is to collect runner, mixing runner and shower nozzle.
6. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：The runner plate
By metal 3D printing method machine-shaping.
7. a kind of differential mixed type chemical vapor phase growing apparatus according to claim 1, it is characterised in that：Its heating system
For electromagnetic induction heating mode, heating coil is located in pedestal, and heating coil arrangement mode is that annular arrangement or dot matrix are arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720273705.XU CN206538474U (en) | 2017-03-21 | 2017-03-21 | A kind of differential mixed type chemical vapor phase growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720273705.XU CN206538474U (en) | 2017-03-21 | 2017-03-21 | A kind of differential mixed type chemical vapor phase growing apparatus |
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| Publication Number | Publication Date |
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| CN206538474U true CN206538474U (en) | 2017-10-03 |
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| CN201720273705.XU Expired - Fee Related CN206538474U (en) | 2017-03-21 | 2017-03-21 | A kind of differential mixed type chemical vapor phase growing apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756887A (en) * | 2017-03-21 | 2017-05-31 | 北京化工大学 | A kind of differential mixed type chemical vapor phase growing apparatus |
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2017
- 2017-03-21 CN CN201720273705.XU patent/CN206538474U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756887A (en) * | 2017-03-21 | 2017-05-31 | 北京化工大学 | A kind of differential mixed type chemical vapor phase growing apparatus |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171003 |