CN206516637U - A kind of five grid polycrystalline cell pieces - Google Patents
A kind of five grid polycrystalline cell pieces Download PDFInfo
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- CN206516637U CN206516637U CN201720224455.0U CN201720224455U CN206516637U CN 206516637 U CN206516637 U CN 206516637U CN 201720224455 U CN201720224455 U CN 201720224455U CN 206516637 U CN206516637 U CN 206516637U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides a kind of five grid polycrystalline cell piece, belongs to technical field of solar batteries.This five grid polycrystalline cell piece, including substrate, described substrate is provided with some main gate lines and some secondary grid lines, main gate line is mutually perpendicular to secondary grid line and is connected in point of intersection, characterized in that, being connected with welding in described main gate line, anti-breaking grid are provided between every two secondary grid lines, connected between main gate line and secondary grid line by gradual change grid, and gradual change grid are connected the width of one end with main gate line and are more than the width that gradual change grid are connected one end with pair grid line；Described substrate includes body; body includes p-type polysilicon piece, N-type polycrystalline silicon piece and the connected region being arranged between p-type polysilicon piece and N-type polycrystalline silicon piece; the upside of p-type polysilicon piece is provided with p-type polysilicon film; N-type polycrystalline silicon film is provided with the downside of N-type polycrystalline silicon piece; described body surface is provided with the outside of conducting film, the conducting film and is provided with diaphragm.The utility model has the advantages that optoelectronic transformation efficiency is high.
Description
Technical field
The utility model belongs to technical field of solar batteries, is related to a kind of five grid polycrystalline cell piece.
Background technology
With the development of solar battery sheet, in order to improve battery efficiency, the width of main grid is more and more narrow, the line footpath of secondary grid
It is same to challenge thinner level.The effect of solar battery sheet pair grid is to collect the electricity that cell piece surface photovoltage effect is produced
Son, then collects and forms electric current, by secondary grid current to main grid.
Welding is the important raw and processed materials during welding photovoltaic component, and the quality of welding quality will directly influence photovoltaic group
The collection efficiency of part electric current, the power influence on photovoltaic module is very big.Welding must be accomplished during series cells
Firm welding, it is to avoid the generation of rosin joint dry joint phenomenon.Manufacturer must be according to selected cell piece when selecting welding
Characteristic determines the welding with what state.The standard typically selected be according to the thickness of cell piece and the number of short circuit current flow come
The thickness of welding is determined, the width of welding is consistent with the main delete line width of battery, and the soft or hard degree of welding is generally dependent on electricity
The thickness and soldering appliance of pond piece.At present, many front main grid line for battery piece design width are 1.4mm, and most array at present
The conventional use of welding of part factory is 1.6-2.0mm width, due to the welding wider width used, the solar cell of identical quantity
The welding rod that piece is used will be higher by a lot, add cost, in addition the welding of wider width also blocked excessive cell piece by
Smooth surface so that the light-receiving area of cell piece diminishes, and reduces photovoltaic efficiency.
In the manufacturing process of solar battery sheet, if because printing bad between two main grids during printing
Secondary grid on have simultaneously at two or the above disconnected grid, the cell piece designed without anti-breaking grid will not in the position electric current of two disconnected grid
Give and passing through, the secondary grid also just represented between the two disconnected grid are in failure state, so as to influence the electrical property of cell piece, cause
Cell piece efficiency is relatively low.
In addition, in the manufacturing process of solar battery sheet, during welding welding, soldering tip temperature drift, operation are not
Cross and weld caused by specification etc., cause main grid to be broken with secondary grid junction, reduce the electricity conversion of cell piece.
The content of the invention
The purpose of this utility model is there is above mentioned problem for existing technology, it is proposed that a kind of five grid polycrystalline battery
Piece, technical problem to be solved in the utility model is how to improve the electricity conversion of cell piece.
The purpose of this utility model can be realized by following technical proposal：A kind of five grid polycrystalline cell pieces, including substrate,
Described substrate is provided with some main gate lines being parallel to each other and some secondary grid lines being parallel to each other, and main gate line and secondary grid line are mutual
It is connected vertically and in point of intersection, it is characterised in that be connected between welding, every two secondary grid lines and be provided with described main gate line
Anti-breaking grid, are connected between main gate line and secondary grid line by gradual change grid, and gradual change grid are connected the width of one end with main gate line more than gradually
Become the width that grid are connected one end with secondary grid line；Described substrate includes body, and body includes p-type polysilicon piece, N-type polycrystalline silicon piece
And the connected region being arranged between p-type polysilicon piece and N-type polycrystalline silicon piece, p-type polysilicon piece be in N-type polycrystalline silicon piece it is upper
Side, p-type polysilicon piece both sides are provided with Top electrode, and the upside of p-type polysilicon piece is provided with p-type polysilicon film, described N-type polycrystalline silicon
Piece both sides, which are provided with the downside of bottom electrode, N-type polycrystalline silicon piece, is provided with N-type polycrystalline silicon film, and described body surface is provided with conducting film, described
Diaphragm is provided with the outside of conducting film.
In the presence of welding, packaging efficiency can be improved；In the presence of anti-breaking grid, it can make have two on secondary grid line
Can still collecting for grid of breaking more than at place or two electronically forms current direction main gate line, so as to improve the efficiency of cell piece；
In the presence of gradual change grid, by increasing capacitance it is possible to increase the welding pulling force of main grid, reduced weldering and cause main grid and the fracture of secondary grid junction.
In the presence of conducting film, electrical efficiency can be increased；In the presence of diaphragm, this five grid polycrystalline electricity is added
The service life of pond piece；In the presence of p-type polysilicon film and the N-type polycrystalline silicon film, effective guarantee p-type polysilicon piece and N-type
The stabilization of polysilicon chip, improves the efficiency of opto-electronic conversion.
In five above-mentioned grid polycrystalline cell pieces, the quantity of described main gate line is 5, and the width of main gate line is 0.6-
0.9mm。
In five above-mentioned grid polycrystalline cell pieces, the quantity of described secondary grid line is 24-40 roots, and the width of secondary grid line is
0.02-0.04mm。
In five above-mentioned grid polycrystalline cell pieces, the width of described wider one end of gradual change grid is 0.6-0.9mm, narrower by one
The width at end is 0.02-0.04mm.
In five above-mentioned grid polycrystalline cell pieces, the width of described anti-breaking grid is 0.02-0.04mm.
In five above-mentioned grid polycrystalline cell pieces, the width of described welding is 0.8-1mm.
In five above-mentioned grid polycrystalline cell pieces, the specification of described substrate is 156.75*156.75.
In five above-mentioned grid polycrystalline cell pieces, described main gate line, secondary grid line, gradual change grid and anti-breaking grid pass through printing
Mode be fixed on substrate.
Compared with prior art, the utility model has advantages below：
1st, the utility model can improve packaging efficiency by welding；The efficiency of cell piece can be improved by anti-breaking grid；
The welding pulling force of main grid can be increased by gradual change grid.
2nd, the utility model can increase electrical efficiency by conducting film；This five grid polycrystalline battery is added by diaphragm
The service life of piece；Pass through p-type polysilicon film and N-type polycrystalline silicon film effective guarantee p-type polysilicon piece and N-type polycrystalline silicon piece
It is stable, improve the efficiency of opto-electronic conversion.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of substrate in the utility model.
In figure, 1, substrate；11st, body；111st, p-type polysilicon piece；112nd, N-type polycrystalline silicon piece；113rd, connected region；12nd, p-type
Polysilicon film；13rd, N-type polycrystalline silicon film；14th, conducting film；15th, diaphragm；2nd, main gate line；3rd, secondary grid line；4th, welding；5th, it is anti-breaking
Grid；6th, gradual change grid.
Embodiment
The following is specific embodiment of the utility model and with reference to accompanying drawing, further is made to the technical solution of the utility model
Description, but the utility model is not limited to these embodiments.
As shown in figure 1, a kind of five grid polycrystalline cell piece, including substrate 1, the specification of substrate 1 is 156.75*156.75, base
Plate 1 is provided with 5 main gate lines 2 and 32 secondary grid lines 3 being parallel to each other being parallel to each other, and main gate line 2 is mutually perpendicular to secondary grid line 3
And be connected in point of intersection.It is connected with described main gate line 2 between welding 4, every two secondary grid lines 3 and is provided with anti-breaking grid 5, main grid
Connected between line 2 and secondary grid line 3 by gradual change grid 6, and gradual change grid 6 be connected with main gate line 2 width of one end more than gradual change grid 6 and
Secondary grid line 3 connects the width of one end.Main gate line 2, secondary grid line 3, gradual change grid 6 and anti-breaking grid 5 are fixed on by way of printing
On substrate 1.
In the present embodiment, the width of main gate line 2 is 0.8mm, specifically, the width of main gate line 2 can be according to actual feelings
Condition, changes between 0.6-0.9mm.
In the present embodiment, the quantity of secondary grid line 3 changes between 24-40 roots, and the width of secondary grid line 3 is 0.3mm.Specifically
, it can be changed according to actual conditions, the width of secondary grid line 3 between 0.02-0.04mm.
In the present embodiment, the width of the wider one end of gradual change grid 6 is 0.8mm, and the width of narrower one end is 0.03mm.Specifically
, it can be changed according to actual conditions, the width of the wider one end of gradual change grid 6 in 0.6-0.9mm, the width of narrower one end can be
0.02-0.04mm changes.
In the present embodiment, the width of anti-breaking grid 5 is 0.03mm.Specifically, can according to actual conditions, anti-breaking grid 5
Width can change between 0.02-0.04mm.
In the present embodiment, the width of welding 4 is 0.9mm.Specifically, can be according to actual conditions, the width of welding 4
0.8-1mm。
This five grid polycrystalline cell piece, in the presence of welding 4, can improve packaging efficiency；In the presence of anti-breaking grid 5,
It can make to have on secondary grid line 3 disconnected can still collecting for grid more than at two or at two to electronically form current direction main gate line 2, from
And improve the efficiency of cell piece；In the presence of gradual change grid 6, by increasing capacitance it is possible to increase the welding pulling force of main grid, reduced weldering and cause main grid
With the fracture of secondary grid junction.
As shown in Fig. 2 substrate 1 includes body 11, body 11 includes p-type polysilicon piece 111, N-type polycrystalline silicon piece 112 and set
The connected region 113 between p-type polysilicon piece 111 and N-type polycrystalline silicon piece 112 is put, p-type polysilicon piece 111 is in N-type polycrystalline silicon
The upside of piece 112, the both sides of p-type polysilicon piece 111 are provided with Top electrode, and the upside of p-type polysilicon piece 111 is provided with p-type polysilicon film
12, the described both sides of N-type polycrystalline silicon piece 112 are provided with bottom electrode, and the downside of N-type polycrystalline silicon piece 112 is provided with N-type polycrystalline silicon film 13, institute
The surface of body 11 stated is provided with conducting film 14, and the outside of conducting film 14 is provided with diaphragm 15.
This five grid polycrystalline cell piece, in the presence of conducting film 14, can increase electrical efficiency；In the effect of diaphragm 15
Under, add the service life of this five grid polycrystalline cell piece；In the presence of p-type polysilicon film 12 and N-type polycrystalline silicon film 13, have
Effect has ensured the stabilization of p-type polysilicon piece 111 and N-type polycrystalline silicon piece 112, improves the efficiency of opto-electronic conversion.
Specific embodiment described herein is only to the utility model spirit explanation for example.The utility model institute
Category those skilled in the art can make various modifications or supplement or using similar to described specific embodiment
Mode substitute, but without departing from spirit of the present utility model or surmount scope defined in appended claims.
Although more having used 1, substrate herein；11st, body；111st, p-type polysilicon piece；112nd, N-type polycrystalline silicon piece；
113rd, connected region；12nd, p-type polysilicon film；13rd, N-type polycrystalline silicon film；14th, conducting film；15th, diaphragm；2nd, main gate line；3rd, secondary grid
Line；4th, welding；5th, anti-breaking grid；6th, the term such as gradual change grid, but it is not precluded from the possibility using other terms.Use these terms
Just for the sake of more easily describing and explaining essence of the present utility model；It is construed as any additional limitation all
Disagreed with the utility model spirit.
Claims (8)
1. a kind of five grid polycrystalline cell piece, including substrate, described substrate are provided with some main gate lines being parallel to each other and some
The secondary grid line being parallel to each other, main gate line is mutually perpendicular to secondary grid line and is connected in point of intersection, it is characterised in that described main grid
It is connected with line between welding, every two secondary grid lines and is provided with anti-breaking grid, is connected between main gate line and secondary grid line by gradual change grid, and
The width that gradual change grid are connected one end with main gate line is more than the width that gradual change grid are connected one end with secondary grid line；Described substrate includes this
Body, body includes p-type polysilicon piece, N-type polycrystalline silicon piece and the connection being arranged between p-type polysilicon piece and N-type polycrystalline silicon piece
Area, p-type polysilicon piece be in N-type polycrystalline silicon piece upside, p-type polysilicon piece both sides be provided with Top electrode, p-type polysilicon piece it is upper
Side is provided with p-type polysilicon film, and described N-type polycrystalline silicon piece both sides, which are provided with the downside of bottom electrode, N-type polycrystalline silicon piece, is provided with N-type polycrystalline
Silicon fiml, described body surface is provided with the outside of conducting film, the conducting film and is provided with diaphragm.
2. five grid polycrystalline cell piece according to claim 1, it is characterised in that the quantity of described main gate line is 5, main
The width of grid line is 0.6-0.9mm.
3. five grid polycrystalline cell piece according to claim 2, it is characterised in that the quantity of described secondary grid line is 24-40
Root, the width of secondary grid line is 0.02-0.04mm.
4. five grid polycrystalline cell piece according to claim 3, it is characterised in that the width of described wider one end of gradual change grid
For 0.6-0.9mm, the width of narrower one end is 0.02-0.04mm.
5. five grid polycrystalline cell piece according to claim 4, it is characterised in that the width of described anti-breaking grid is 0.02-
0.04mm。
6. five grid polycrystalline cell piece according to claim 5, it is characterised in that the width of described welding is 0.8-1mm.
7. the five grid polycrystalline cell pieces according to any one in claim 1-6, it is characterised in that the rule of described substrate
Lattice are 156.75*156.75.
8. the five grid polycrystalline cell pieces according to any one in claim 1-6, it is characterised in that described main gate line,
Secondary grid line, gradual change grid and anti-breaking grid are fixed on substrate by way of printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720224455.0U CN206516637U (en) | 2017-03-09 | 2017-03-09 | A kind of five grid polycrystalline cell pieces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720224455.0U CN206516637U (en) | 2017-03-09 | 2017-03-09 | A kind of five grid polycrystalline cell pieces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206516637U true CN206516637U (en) | 2017-09-22 |
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ID=59870069
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720224455.0U Expired - Fee Related CN206516637U (en) | 2017-03-09 | 2017-03-09 | A kind of five grid polycrystalline cell pieces |
Country Status (1)
| Country | Link |
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| CN (1) | CN206516637U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108717950A (en) * | 2018-07-13 | 2018-10-30 | 天合光能股份有限公司 | A kind of anti-breaking grid photovoltaic cell and photovoltaic cell component |
| CN114093969A (en) * | 2020-07-31 | 2022-02-25 | 苏州阿特斯阳光电力科技有限公司 | Battery piece, photovoltaic module with battery piece and manufacturing method of photovoltaic module |
-
2017
- 2017-03-09 CN CN201720224455.0U patent/CN206516637U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108717950A (en) * | 2018-07-13 | 2018-10-30 | 天合光能股份有限公司 | A kind of anti-breaking grid photovoltaic cell and photovoltaic cell component |
| CN108717950B (en) * | 2018-07-13 | 2020-03-27 | 天合光能股份有限公司 | Grid-breakage-preventing photovoltaic cell piece and photovoltaic cell assembly |
| CN114093969A (en) * | 2020-07-31 | 2022-02-25 | 苏州阿特斯阳光电力科技有限公司 | Battery piece, photovoltaic module with battery piece and manufacturing method of photovoltaic module |
| CN114093969B (en) * | 2020-07-31 | 2024-04-12 | 苏州阿特斯阳光电力科技有限公司 | Battery piece, photovoltaic module with battery piece and manufacturing method of photovoltaic module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170922 Termination date: 20200309 |
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| CF01 | Termination of patent right due to non-payment of annual fee |