CN206460953U - A kind of encapsulating structure - Google Patents
A kind of encapsulating structure Download PDFInfo
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- CN206460953U CN206460953U CN201621228805.2U CN201621228805U CN206460953U CN 206460953 U CN206460953 U CN 206460953U CN 201621228805 U CN201621228805 U CN 201621228805U CN 206460953 U CN206460953 U CN 206460953U
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- encapsulating structure
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- igbt chip
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Abstract
A kind of encapsulating structure, including igbt chip (1), diode chip for backlight unit (2), substrate (3), the first pin (4), second pin (5) and the 3rd pin (6)；Substrate (3) is electrically connected with the 3rd pin (6), and is isolated respectively with the first pin (4) and second pin (5)；Igbt chip (1) and diode chip for backlight unit (2) are respectively welded on substrate (3)；The colelctor electrode (C) of igbt chip (1) is electrically connected with substrate (3) respectively with the negative electrode of diode chip for backlight unit (2)；The emitter stage (E) of igbt chip (1) is electrically connected by wire with the routing area of second pin (5) respectively with the anode of diode chip for backlight unit (2)；The grid (G) of igbt chip (1) is electrically connected by wire with the routing area of the first pin；3rd pin (6) is located at the same side of the first pin (4) and second pin (5).Encapsulating structure clever structure of the present utility model, it is practical.
Description
Technical field
The utility model is related to field of semiconductor package, more particularly to a kind of encapsulating structure.
Background technology
IGBT is Insulated Gate Bipolar Transistor abbreviation, means insulated gate bipolar transistor.
IGBT is driven by BJT (bipolar transistor) and MOSFET (insulated-gate type field effect transistor) the compound full-control type voltage constituted
Dynamic formula electronic device.The device has switching frequency height, input impedance is larger, heat endurance is good, drive circuit is simple, low saturation
The characteristic such as voltage and high current, by as power device be widely used in alternating current generator, frequency converter, Switching Power Supply, lighting circuit,
The Industry Controls such as Traction Drive, digital camera, electromagnetic heating apparatus, UPS, electric welding machine, wind-power electricity generation and power electronic system neck
In domain.
With the aggravation of competition, IGBT encapsulation technology is always in the trend towards raising integrated level, reduction chip size
Development, associated therewith is the formation for crossing high temperature and thermal stress that device power and power density are sharply increased and produced, thus
Bring the reduction of device job stability and the increase of spoilage.And existing single IGBT can only increase temperature measuring equipment in its vicinity,
Therefore the accuracy and promptness of thermometric are bad, and IGBT temperature control is protected not in time.
In addition, IGBT is operated mainly in complete machine under on off state, and most of uses are under the conditions of inductive load, this
Sample, carries out protection to IGBT and is particularly important.At present, when using and designing IGBT, the surplus typically stayed all compared with
Greatly, but still can not resist from extraneous interference and various Problem of Failure caused by itself complete machine.IGBT failures are mainly by collecting
Overvoltage/excessively stream of the overvoltage/excessively stream and grid of electrode and emitter stage causes.In addition, the presence of leakage inductance and lead-in inductance, will cause
IGBT colelctor electrode overvoltage, and latching effect is produced in device inside, make IGBT lockout failures.Meanwhile, higher overvoltage meeting
Puncture IGBT.
Utility model content
The purpose of this utility model is in view of the above-mentioned problems, proposing a kind of encapsulating structure.
The technical scheme that the utility model is proposed is as follows：
The utility model proposes a kind of encapsulating structure, including igbt chip, diode chip for backlight unit, substrate, the first pin,
Two pins and the 3rd pin；Substrate is electrically connected with the 3rd pin, and is isolated respectively with the first pin and second pin；IGBT cores
Piece and diode chip for backlight unit are respectively welded on substrate；The colelctor electrode C of igbt chip and the negative electrode of diode chip for backlight unit respectively with substrate
Electrical connection；The emitter E of igbt chip and the anode of diode chip for backlight unit are electrically connected by the routing area of wire and second pin respectively
Connect；The grid G of igbt chip is electrically connected by wire with the routing area of the first pin；3rd pin is located at the first pin and second
The same side of pin.
In the above-mentioned encapsulating structure of the utility model, in addition to the 4th pin, the 5th pin, the 6th pin and for auxiliary
The control IC for helping control igbt chip to be operated；Substrate respectively with the 4th pin, the 5th pin, the 6th pin every
From；Control IC be welded in second pin, and control IC respectively with the first pin, the 4th pin,
5th pin and the 6th pin are electrically connected with；4th pin connects the signal input part of external circuit；5th pin connects external circuit
Signal output part；6th pin connects power end.
In the above-mentioned encapsulating structure of the utility model, the 4th pin is arranged between the first pin and second pin, and the 5th
Pin and the 6th pin are separately positioned between second pin and the 3rd pin.
In the above-mentioned encapsulating structure of the utility model, in addition to for igbt chip, control IC, first to be drawn
The routing area of pin, the routing area of the 4th pin, the routing area of second pin, the routing area of the 5th pin, the routing of the 6th pin
The Plastic Package shell that area is packaged together；The Plastic Package shell offers open-minded on the position between the 6th pin and the 3rd pin
Mouthful.
In the above-mentioned encapsulating structure of the utility model, igbt chip and control IC are non-coplanar.
In the above-mentioned encapsulating structure of the utility model, the both sides of Plastic Package shell offer heat emission hole respectively.
In the above-mentioned encapsulating structure of the utility model, the 4th pin includes the Part I parallel with the first pin, with the
The Part II of the conllinear Part III of one pin and connection Part I and Part III.
Encapsulating structure of the present utility model diode of reverse parallel connection one between the colelctor electrode C and emitter E of igbt chip
Chip, so as to provide afterflow passage to igbt chip, prevents its breakdown.By the encapsulation of diode chip for backlight unit and igbt chip also
Driving and the direct temperature measurement of igbt chip are realized, strengthens the accuracy of thermometric.Meanwhile, also increase controls IC, with
Coordinate with igbt chip, so that the sensitiveness of electrical equipment transition is greatly reduced igbt chip.In addition, in encapsulating structure, control
IC processed isolates setting with igbt chip, so as to improve radiating efficiency.Encapsulating structure structure of the present utility model is skilful
It is wonderful, it is practical.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing：
Fig. 1 shows the schematic diagram of the encapsulating structure of the utility model first embodiment；
Fig. 2 shows the schematic diagram of the other direction of the encapsulating structure shown in Fig. 1；
Fig. 3 shows the schematic diagram of the encapsulating structure of the utility model second embodiment.
Embodiment
The technical scheme in the invention for solving the technical problem is：IGBT encapsulation technology is always integrated towards improving
Degree, the trend development for reducing chip size, it is associated therewith to be device power and that power density is sharply increased and produced is too high
The formation of temperature and thermal stress, meanwhile, IGBT can lose because of overvoltage/excessively stream of collector and emitter and overvoltage/excessively stream of grid
Effect.The technical thought that the utility model is proposed with regard to the technical problem is：Between the colelctor electrode C and emitter E of igbt chip
The diode chip for backlight unit of reverse parallel connection one, so as to provide afterflow passage to igbt chip, prevents its breakdown.By diode chip for backlight unit with
Driving and the direct temperature measurement of igbt chip are also realized in the encapsulation of igbt chip, strengthen the accuracy of thermometric.Meanwhile, also increase control
IC processed, to coordinate with igbt chip, so that the sensitiveness of electrical equipment transition is greatly reduced igbt chip.In addition,
In encapsulating structure, control IC isolates setting with igbt chip, so as to improve radiating efficiency.
In order that technical purpose of the present utility model, technical scheme and technique effect are apparent, in order to this area
Technical staff understands and implemented the utility model, the utility model is done below in conjunction with the accompanying drawings and the specific embodiments further in detail
Thin explanation.
First embodiment
As Fig. 1 and Fig. 2, Fig. 1 show the schematic diagram of the encapsulating structure of the utility model first embodiment；Fig. 2 is shown
The schematic diagram of the other direction of encapsulating structure shown in Fig. 1.The encapsulating structure includes igbt chip 1, diode chip for backlight unit 2, substrate
3rd, the first pin 4, the pin 6 of second pin 5 and the 3rd；Wherein, substrate 3 is electrically connected with the 3rd pin 6, and is drawn respectively with first
Pin 4 and second pin 5 are isolated；Igbt chip 1 and diode chip for backlight unit 2 are respectively welded on the substrate 3；The colelctor electrode C of igbt chip 1
Electrically connected respectively with substrate 3 with the negative electrode of diode chip for backlight unit 2；The emitter E of igbt chip 1 and the anode of diode chip for backlight unit 2 point
Do not electrically connected by wire with the routing area of second pin 5；The grid G of igbt chip 1 passes through wire and the routing of the first pin
Area is electrically connected.So, when igbt chip 1 is turned on, its colelctor electrode C current potential is higher than emitter E, and electric current flows from colelctor electrode C
Toward emitter E, it is this under the conditions of, antiparallel diode chip for backlight unit 2 because voltage reversal and in cut-off state；When diode core
When piece 2 is turned on, the current potential of its anode is higher than negative electrode, and electric current flows to negative electrode from anode, it is this under the conditions of, IGBT is because voltage is anti-
To and in cut-off state.Further, in the present embodiment, the 3rd pin 6 is located at the same of the first pin 4 and second pin 5
Side, so as to avoid influence of the high potential of the 3rd pin 6 to the first pin 4 and second pin 5, prevents electrion.Together
When, driving and the direct temperature measurement of igbt chip are also realized by the encapsulation of diode chip for backlight unit 2 and igbt chip 1, strengthens thermometric
Accuracy.
Usually, substrate 3 can be ceramic copper-clad plate (i.e. DBC, Direct Bonding Copper), be by ceramic base
Material, bond adhesion layer and conductive layer are constituted；It is to be bonded directly to aluminum oxide or aluminium nitride ceramic substrate at high temperature by copper foil
Surface manufactures realization, and it has high heat conduction characteristic, high-adhesion, excellent solderability and good electrical insulation performance, be
The basic material of high-power electric and electronic circuit interconnection technique and structure technology.It is appreciated that substrate 3 can also be pcb board etc..
Further, in the present embodiment, encapsulating structure also include the 4th pin 7, the 5th pin 8, the 6th pin 9 and
For the control IC for aiding in control igbt chip 1 to be operated；Herein, control IC includes overvoltage guarantor
Protection circuit and/or electric voltage observation circuit etc..Substrate 3 is isolated with the 4th pin 7, the 5th pin 8, the 6th pin 9 respectively；Domination set
It is welded on into IC circuit in second pin 5, and controls IC to draw respectively with the first pin 4, the 4th pin the 7, the 5th
The pin 9 of pin 8 and the 6th is electrically connected with.4th pin 7 connects the signal input part of external circuit；5th pin 8 connects external circuit
Signal output part；6th pin 9 connects power end.So, control IC and igbt chip 1 are just integrated, so that
Significantly reduce susceptibility of the igbt chip 1 to electrical transients.Meanwhile, control IC is physically being realized and IGBT
Chip 1 is isolated, and can not cause any accident and unwanted node that two devices interact.
Further, as shown in Fig. 2 igbt chip 1 and control IC are non-coplanar, so, IGBT is just improved
The heat-sinking capability of chip 1.
In the present embodiment, the 4th pin 7 is arranged between the first pin 4 and second pin 5, the 5th pin 8 and the 6th
Pin 9 is separately positioned between the pin 6 of second pin 5 and the 3rd, so as to further avoid the high potential of the 3rd pin 6 to it
The influence of his pin, prevents electrion.
Further, encapsulating structure also include be used for by igbt chip 1, control IC, the first pin 4 routing
Area, the routing area of the 4th pin 7, the routing area of second pin 5, the routing area of the 5th pin 8, the routing area envelope of the 6th pin 9
The Plastic Package shell 10 being fitted together.The Plastic Package shell 10 is offered on the position between the 6th pin 9 and the 3rd pin 6
Gap 11, to increase the creep age distance on surface, prevents electrion.
Further, in the present embodiment, the wire widths of the pin 6 of second pin 5 and the 3rd are 1mm；Other pins
Wire widths are 0.6mm；The grid G of igbt chip 1 and the first pin 4 are welded using 125 μm of aluminum steels；Igbt chip 1
Emitter E and diode chip for backlight unit 2 are welded with second pin 5 using 300 μm of aluminum steels respectively；Control IC and IGBT
The emitter E of chip 1 is welded using 25 μm of copper cash.
Further, in the present embodiment, as shown in figure 1, encapsulating structure, which is offered, extends through the He of Plastic Package shell 10
The installation through-hole 12 of substrate 3；Pass through the installation through-hole 12, it is possible to achieve the fixed installation of encapsulating structure.
Further, in the present embodiment, as shown in figure 1, the both sides of Plastic Package shell 10 offer heat emission hole 13 respectively,
By the heat emission hole 13 of both sides, the radiating efficiency of igbt chip 1 can be improved.
Further, because the first pin 4 is shorter, in the present embodiment, as shown in figure 1, the 4th pin 7 includes and first
The parallel Part I of pin 4, the Part III conllinear with the first pin 4 and it is connected the second of Part I and Part III
Part, so that the 4th pin 7 occupies the unwanted spaces of the institute of the first pin 4, is so allowed between other pins
Distance can be expanded, so that interfering between reducing pin.
Second embodiment
As shown in figure 3, Fig. 3 shows the schematic diagram of the encapsulating structure of the utility model second embodiment.Second embodiment
Difference with first embodiment is：The encapsulating structure of second embodiment is not provided with heat emission hole 13, and encapsulating structure draws
Pin shape is different.
Specifically, in the present embodiment, the 4th pin 7 be arranged in parallel with the first pin 4.
Encapsulating structure of the present utility model diode of reverse parallel connection one between the colelctor electrode C and emitter E of igbt chip
Chip, so as to provide afterflow passage to igbt chip, prevents its breakdown.Meanwhile, also increase control IC, with
Igbt chip coordinates, so that the sensitiveness of electrical equipment transition is greatly reduced igbt chip.In addition, in encapsulating structure, control
IC isolates setting with igbt chip, so as to improve radiating efficiency.Encapsulating structure clever structure of the present utility model,
It is practical.
It should be appreciated that for those of ordinary skills, can according to the above description be improved or converted,
And all these modifications and variations should all belong to the protection domain of the utility model appended claims.
Claims (6)
1. a kind of encapsulating structure, it is characterised in that including igbt chip (1), diode chip for backlight unit (2), substrate (3), the first pin
(4), second pin (5) and the 3rd pin (6)；Substrate (3) is electrically connected with the 3rd pin (6), and respectively with the first pin (4)
With second pin (5) isolation；Igbt chip (1) and diode chip for backlight unit (2) are respectively welded on substrate (3)；Igbt chip (1)
Colelctor electrode (C) is electrically connected with substrate (3) respectively with the negative electrode of diode chip for backlight unit (2)；The emitter stage (E) and two of igbt chip (1)
The anode of pole pipe chip (2) is electrically connected by wire with the routing area of second pin (5) respectively；The grid (G) of igbt chip (1)
Electrically connected by wire with the routing area of the first pin；3rd pin (6) is located at the same of the first pin (4) and second pin (5)
Side；
Encapsulating structure also includes the 4th pin (7), the 5th pin (8), the 6th pin (9) and controls igbt chip for auxiliary
(1) the control integrated circuit (IC) being operated；Substrate (3) respectively with the 4th pin (7), the 5th pin (8), the 6th pin
(9) isolate；Control integrated circuit (IC) is welded in second pin (5), and controls integrated circuit (IC) to draw respectively with first
Pin (4), the 4th pin (7), the 5th pin (8) and the 6th pin (9) are electrically connected with；4th pin (7) connects the letter of external circuit
Number input；5th pin (8) connects the signal output part of external circuit；6th pin (9) connects power end.
2. encapsulating structure according to claim 1, it is characterised in that the 4th pin (7) is arranged on the first pin (4) and
Between two pins (5), the 5th pin (8) and the 6th pin (9) are separately positioned between second pin (5) and the 3rd pin (6).
3. encapsulating structure according to claim 2, it is characterised in that also including for igbt chip (1), control is integrated
Circuit (IC), the routing area of the first pin (4), the routing area of the 4th pin (7), the routing area of second pin (5), the 5th pin
(8) the Plastic Package shell (10) that routing area, the routing area of the 6th pin (9) is packaged together；The Plastic Package shell (10) exists
Gap (11) is offered on position between 6th pin (9) and the 3rd pin (6).
4. encapsulating structure according to claim 1, it is characterised in that igbt chip (1) is not common with control IC
Face.
5. encapsulating structure according to claim 1, it is characterised in that the both sides of Plastic Package shell (10) offer scattered respectively
Hot hole (13).
6. encapsulating structure according to claim 1, it is characterised in that the 4th pin (7) includes parallel with the first pin (4)
Part I, the Part III conllinear with the first pin (4) and the Part II for being connected Part I and Part III.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621228805.2U CN206460953U (en) | 2016-10-28 | 2016-10-28 | A kind of encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621228805.2U CN206460953U (en) | 2016-10-28 | 2016-10-28 | A kind of encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206460953U true CN206460953U (en) | 2017-09-01 |
Family
ID=59692547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621228805.2U Active CN206460953U (en) | 2016-10-28 | 2016-10-28 | A kind of encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206460953U (en) |
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2016
- 2016-10-28 CN CN201621228805.2U patent/CN206460953U/en active Active
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