CN206441868U - Restructural multilayer holographic antenna - Google Patents
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- CN206441868U CN206441868U CN201621390032.8U CN201621390032U CN206441868U CN 206441868 U CN206441868 U CN 206441868U CN 201621390032 U CN201621390032 U CN 201621390032U CN 206441868 U CN206441868 U CN 206441868U
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- 239000000758 substrate Substances 0.000 claims abstract description 25
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- 230000008569 process Effects 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 2
- 230000009191 jumping Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005388 cross polarization Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
The utility model discloses a kind of restructural multilayer holographic antenna.The antenna includes semiconductor chip (11) Anneta module (13), the first holographic annulus (15) and the second holographic annulus (17)；Anneta module (13), the first holographic annulus (15) and the second holographic annulus (17) are made on semiconductor chip (11) using semiconductor technology；Wherein, Anneta module (13), the first holographic annulus (15) and the second holographic annulus (17) include the SPiN diode strings being sequentially connected in series.The utility model constitutes source antenna and holographic structure by making SPiN diodes on the semiconductor substrate using SPiN diodes, small volume, simple in construction, easy to process；Antenna uses coaxial cable as feed, without complicated feed structure；It is being turned on or off for controllable SPiN diode strings by the applied voltage on direct current biasing line, to realize stealthy and frequency the rapid jumping of antenna；The radiation characteristic of target antenna can be realized by structure.
Description
Technical Field
The utility model belongs to the technical field of the antenna, especially, relate to a restructural multilayer holographic antenna.
Background
Various radio communication devices, such as radar, radio, television, etc., transmit signals through antennas, which are required to have high performance indexes. The holographic antenna is a special antenna form, the design concept is unique, certain indexes are superior to those of antennas in other forms, and the design theory and engineering application of the holographic antenna have higher research and practical values. In particular, the holographic antenna is a bore antenna which utilizes a holographic structure to change the radiation characteristic of a feed source so as to obtain required radiation. The feed source of the holographic antenna does not need a complex feed network, so that the high loss of the microstrip antenna array feed network is avoided. Moreover, the holographic antenna can be processed by printed circuit board technology, and the feed source and the holographic plate are placed on the same plane, so that a low profile is realized, which is a great advantage compared with a reflector antenna. The holographic antenna has excellent characteristics of low cross polarization while realizing high gain.
Then, in order to break through the situation that the fixed and unchangeable working performance of the traditional antenna is difficult to meet various system requirements and complex and changeable application environments, the concept of the reconfigurable antenna is emphasized and developed. The reconfigurable antenna can be divided into a frequency reconfigurable antenna (including realizing a broadband and realizing a multiband), a directional diagram reconfigurable antenna, a polarization reconfigurable antenna and a multi-electromagnetic parameter reconfigurable antenna according to functions. The reconfiguration can be realized by changing one or more of various parameters of the antenna, such as frequency, lobe pattern, polarization mode and the like by changing the structure of the reconfigurable antenna. The method has become a research hotspot because of the advantages of small volume, multiple functions and easy realization of diversity application.
Therefore, how to make a reconfigurable holographic antenna becomes extremely important.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem of the leakage current, the embodiment of the utility model provides a reconfigurable multilayer holographic antenna.
An embodiment of the utility model provides a restructural multilayer holographic antenna, include:
the antenna comprises a semiconductor substrate 11, an antenna module 13, a first holographic ring 15 and a second holographic ring 17; the antenna module 13, the first holographic ring 15 and the second holographic ring 17 are all manufactured on the semiconductor substrate 11 by adopting a semiconductor process;
the antenna module 13, the first holographic ring 15 and the second holographic ring 17 each include SPiN diode strings connected in series in sequence.
In an embodiment of the present invention, the antenna module 13 includes a first SPiN diode antenna arm 1301, a second SPiN diode antenna arm 1302, a coaxial feeder 1303, a first dc bias line 1304, a fifth dc bias line 1308, a third dc bias line 1306, a fourth dc bias line 1307, a fifth dc bias line 1308, a sixth dc bias line 1309, a seventh dc bias line 1310, and an eighth dc bias line 1311;
wherein an inner core wire and an outer conductor of the coaxial feed line 1303 are respectively soldered to the first dc bias line 1304 and the second dc bias line 1305;
the first dc bias line 1304, the second dc bias line 1305, the third dc bias line 1306, and the fourth dc bias line 1307 are electrically connected to the first SPiN diode antenna arm 1301 along the length direction of the first SPiN diode antenna arm 1301, respectively;
the second dc bias line 1305, the sixth dc bias line 1309, the seventh dc bias line 1310, and the eighth dc bias line 1311 are electrically connected to the second SPiN diode antenna arm 1302 along the length direction of the second SPiN diode antenna arm 1302, respectively.
In an embodiment of the present invention, the first SPiN diode antenna arm 1301 includes a first SPiN diode string w1, a second SPiN diode string w2 and a third SPiN diode string w3 connected in series in sequence, and the second SPiN diode antenna arm 1302 includes a fourth SPiN diode string w4, a fifth SPiN diode string w5 and a sixth SPiN diode string w6 connected in series in sequence, and the first SPiN diode string w1 and the sixth SPiN diode string w6, the second SPiN diode string w2 and the fifth SPiN diode string w5, the third SPiN diode string w3 and the fourth SPiN diode string w4 include the same number of SPiN diodes respectively.
In an embodiment of the present invention, the second holographic ring (17) includes a plurality of second ring units (1701) uniformly arranged in a ring shape, and the first ring unit 1501 includes a ninth dc bias line 15011 and a seventh SPiN diode string w7, and the ninth dc bias line 15011 is electrically connected to both ends of the seventh SPiN diode string w 7.
In an embodiment of the present invention, the second holographic ring 17 includes a plurality of second ring units 1701 arranged uniformly in a ring shape, and the second ring units 1701 include a tenth dc bias line 17011 and the eighth SPiN diode string w8, and the tenth dc bias line 17011 is electrically connected to both ends of the eighth SPiN diode string w 8.
In one embodiment of the present invention, the semiconductor substrate 11 is an SOI substrate.
In one embodiment of the present invention, the SPiN diode string comprises a plurality of SPiN diodes, which comprise a P + region 27, an N + region 26, and an intrinsic region 22, and further comprise a first metal contact region 23 and a second metal contact region 24; wherein,
the first metal contact region 23 is electrically connected to the P + region 27 at one end and to the second metal contact region 24 of the adjacent SPiN diode or dc bias line 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 at the other end, and the second metal contact region 24 is electrically connected to the N + region 26 at one end and to the dc bias line 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 at the other end or to the first metal contact region 23 of the adjacent SPiN diode.
In an embodiment of the present invention, the holographic device further includes at least one third holographic ring 19, which is disposed outside the second holographic ring 17 and is fabricated on the semiconductor substrate 11 by using a semiconductor process.
Compared with the prior art, the beneficial effects of the utility model are that:
the first, small, the section is low, simple in construction, easy to process;
secondly, a coaxial cable is used as a feed source, and a complex feed source structure is avoided;
thirdly, the SPiN diode is used as a basic composition unit of the antenna, and the reconfiguration of frequency can be realized only by controlling the on-off of the SPiN diode;
fourthly, the SPiN diode is used as a basic composition unit of the holographic structure, the holographic structure graph can be flexibly defined, and the gain and the concealment of the holographic antenna are improved;
fifthly, all the components are arranged on one side of the semiconductor substrate, and the plate making process is easy.
Drawings
For the sake of clarity of the description of the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. The drawings in the following description are examples of the present invention, and other drawings may be derived from those drawings by those skilled in the art without inventive effort.
Fig. 1 is a schematic structural diagram of a reconfigurable multilayer holographic antenna provided by an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an antenna module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first annular unit according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a second annular unit according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an SPiN diode according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an SPiN diode string according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another reconfigurable multilayer holographic antenna according to an embodiment of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention is described in further detail with reference to the accompanying drawings and specific embodiments. Examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of embodiments of the invention encompasses the full ambit of the claims, as well as all available equivalents of the claims.
The present invention will be described in further detail with reference to the accompanying drawings.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a reconfigurable multilayer holographic antenna according to an embodiment of the present invention, where the antenna includes:
the antenna comprises a semiconductor substrate 11, an antenna module 13, a first holographic ring 15 and a second holographic ring 17; the antenna module 13, the first holographic ring 15 and the second holographic ring 17 are all manufactured on the semiconductor substrate 11 by adopting a semiconductor process;
please refer to fig. 2, and fig. 2 is a schematic structural diagram of an antenna module according to an embodiment of the present invention, in which the antenna module 13, the first holographic ring 15 and the second holographic ring 17 include SPiN diode strings connected in series in sequence.
The antenna module 13 includes a first SPiN diode antenna arm 1301, a second SPiN diode antenna arm 1302, a coaxial feeder 1303, a first dc bias line 1304, a second dc bias line 1305, a third dc bias line 1306, a fourth dc bias line 1307, a fifth dc bias line 1308, a sixth dc bias line 1309, a seventh dc bias line 1310, and an eighth dc bias line 1311;
wherein an inner core wire and an outer conductor of the coaxial feed line 1303 are respectively soldered to the first dc bias line 1304 and the second dc bias line 1305;
the first dc bias line 1304, the fifth dc bias line 1308, the third dc bias line 1306, and the fourth dc bias line 1307 are electrically connected to the first SPiN diode antenna arm 1301 along the length direction of the first SPiN diode antenna arm 1301, respectively;
the second dc bias line 1305, the sixth dc bias line 1309, the seventh dc bias line 1310, and the eighth dc bias line 1311 are electrically connected to the second SPiN diode antenna arm 1302 along the length direction of the second SPiN diode antenna arm 1302, respectively.
Optionally, the first SPiN diode antenna arm 1301 includes a first SPiN diode string w1, a second SPiN diode string w2, and a third SPiN diode string w3 that are sequentially connected in series, and the second SPiN diode antenna arm 1302 includes a fourth SPiN diode string w4, a fifth SPiN diode string w5, and a sixth SPiN diode string w6 that are sequentially connected in series, and the first SPiN diode string w1 and the sixth SPiN diode string w6, the second SPiN diode string w2 and the fifth SPiN diode string w5, the third SPiN diode string w3, and the fourth SPiN diode string w4 include an equal number of SPiN diodes, respectively.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a first ring unit according to an embodiment of the present invention, in which the first holographic ring 15 includes a plurality of first ring units 1501 annularly and uniformly arranged, and the first ring unit 1501 includes a ninth dc bias line 15011 and a seventh SPiN diode string w7, and the ninth dc bias line 15011 is electrically connected to two ends of the seventh SPiN diode string w 7.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a second ring unit according to an embodiment of the present invention, the second holographic ring 17 includes a plurality of second ring units 1701 uniformly arranged in a ring shape, and the second ring unit 1701 includes a tenth dc bias line 17011 and the eighth SPiN diode string w8, where the tenth dc bias line 17011 is electrically connected to two ends of the eighth SPiN diode string w 8.
In the above embodiment, the semiconductor substrate 11 is an SOI substrate.
In the above embodiment, the SPiN diode string includes a plurality of SPiN diodes, please refer to fig. 5 and fig. 6 together, fig. 5 is a schematic structural diagram of a SPiN diode provided by an embodiment of the present invention, and fig. 6 is a schematic structural diagram of a SPiN diode string provided by an embodiment of the present invention. Each string of SPiN diodes includes a plurality of SPiN diodes, and the SPiN diodes are connected in series. The SPiN diode includes a P + region 27, an N + region 26, and an intrinsic region 22, and further includes a first metal contact region 23 and a second metal contact region 24; wherein,
the first metal contact region 23 is electrically connected to the P + region 27 at one end and to the second metal contact region 24 of the adjacent SPiN diode or dc bias line 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 at the other end, and the second metal contact region 24 is electrically connected to the N + region 26 at one end and to the dc bias line 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 at the other end or to the first metal contact region 23 of the adjacent SPiN diode. That is, the metal contact region 23 of the SPiN diode at one end of the SPiN diode string is connected to the positive pole of the dc bias, and the metal contact region 24 of the SPiN diode at the other end of the SPiN diode string is connected to the negative pole of the dc bias, so that all the SPiN diodes in the entire SPiN diode string can be in the forward conducting state by applying the dc voltage.
Further, referring to fig. 7, fig. 7 is a schematic structural diagram of another reconfigurable multilayer holographic antenna according to an embodiment of the present invention, and the antenna may further include at least one third holographic ring 19, which is disposed outside the second holographic ring 17 and is fabricated on the semiconductor substrate 11 by using a semiconductor process.
In the embodiment, the SPiN diode is manufactured on the semiconductor substrate, and the source antenna and the holographic structure are formed by the SPiN diode, so that the volume is small, the structure is simple, and the processing is easy; the antenna adopts a coaxial cable as a feed source and has no complex feed source structure; the connection or disconnection of the SPiN diode string can be controlled by the external voltage on the direct current bias line so as to realize the stealth of the antenna and the rapid jump of the frequency; the radiation characteristic of the target antenna can be realized through the structure.
Example two
Referring to fig. 1-5 again, the present embodiment takes a two-layer holographic antenna as an example for detailed description on the basis of the above embodiments. Specifically, the antenna may include: the coaxial feed line comprises a semiconductor substrate, a SPiN diode antenna arm, a double-layer SPiN diode holographic ring, a coaxial feed line and a direct current bias line, wherein the SPiN diode antenna arm, the double-layer SPiN diode holographic ring and the direct current bias line are manufactured on the semiconductor substrate by adopting a semiconductor process, an inner core wire and an outer conductor (shielding layers) of the coaxial feed line are respectively welded on a metal contact piece of the SPiN diode antenna arm, and two welding points are respectively connected with the direct current bias line as a common cathode; the SPiN diodes are sequentially connected end to form a SPiN diode string, the SPiN diode antenna arm consists of three sections of SPiN diode strings, and each SPiN diode string is provided with a direct-current bias line and an external voltage anode; the antenna arms are one quarter of a wavelength long. The holographic ring of inlayer is approximately replaced by eight sections identical SPiN diode strings, and the length of every section SPiN diode string is approximately equal to the length of antenna, and the ring radius is confirmed by holographic structure's formula, the utility model discloses well ring radius is about the triple of quarter wavelength. Wherein, the formula of the holographic structure is as follows:
wherein r is the radius of the innermost ring,is the initial phase difference between the vertical incident plane wave and the radiation field of the source antenna,is an electric field atThe direction component, k, is the wavevector.
The formula shows that the holographic structure is a group of concentric circles with the original point at the center of the circle, and the radius r of the utility model can be triple-quarter wavelength.
Outer holographic ring is approximately replaced by eighteen sections of identical SPiN diode strings, and the length of every section of SPiN diode string approximately equals the length of antenna, and the distance between the inside and outside two-layer ring is confirmed by holographic structure's formula, the utility model discloses distance is a wavelength between the well two-layer ring.
The semiconductor substrate is a Si-based SOI semiconductor wafer.
The SPiN diode antenna arm is composed of three sections of SPiN diode strings, and each SPiN diode string is provided with a direct current bias line and an external voltage anode. It should be understood that the antenna arm of the present invention may be composed of any number of SPiN diode strings, and of course, the number of SPiN diodes included in the diode strings may also be determined according to actual use and process conditions, and is not limited herein.
The coaxial feeder adopts a low-loss coaxial cable, an inner core wire and an outer conductor (shielding layer) of the coaxial feeder are respectively welded on a metal contact piece of the SPiN diode antenna arm, and two welding points are respectively connected with a direct current bias line as a common cathode.
The double-layer holographic ring is approximately replaced by a plurality of sections of identical SPiN diode strings, and each section of SPiN diode string is in a forward conduction state when the antenna works, so that the directional change of the radiation characteristic of the antenna and the improvement of the gain are realized.
The dc bias line can be made on the semiconductor substrate by chemical vapor deposition, and can be made of copper, aluminum, or highly doped polysilicon, and is used for applying dc bias to the SPiN diode string.
Referring to fig. 1 and fig. 2, the antenna is composed of a semiconductor substrate 11, SPiN diode antenna arms 1301 and 1302, a coaxial feed line 1303, dc bias lines (1306, 1307, 1308, 1304, 1305, 1309, 1310, 1311), an inner SPiN diode holographic ring 15, and an outer SPiN diode holographic ring 17, wherein the SPiN diode antenna arms 1301 and 1302, the inner SPiN diode holographic ring 15, the outer SPiN diode holographic ring 17, and the dc bias lines (1306, 1307, 1308, 1304, 1305, 1309, 1310, 1311) are fabricated on the semiconductor substrate by using a semiconductor process, and an inner core line and an outer conductor (shielding layer) of the coaxial feed line 1303 are respectively soldered on the dc bias lines 1304 and 1305.
The SPiN diode antenna arms 1301, 1302 are composed of SPiN diode strings w1, w2, w3, w4, w5, w6, where w1 and w6 are equal in length, w2 and w5 are equal in length, and w3 and w4 are equal in length.
The DC bias lines 1304 and 1305 are respectively connected to the negative voltage poles, the DC bias line groups (1308 and 1309), the DC bias line groups (1307 and 1310) and the DC bias line groups (1306 and 1311) are respectively connected to the positive voltage poles, only one group of DC bias lines can be connected to the positive voltage poles at any working moment, the SPiN diode string can be selectively in a conducting state by controlling the voltage of the DC bias line groups, the conducting SPiN diode can generate solid plasma in an intrinsic region, and the solid plasma has metal-like characteristics and can be used as a radiation structure of an antenna. When different SPiN diode strings work, the electrical size length of the antenna can be changed, and therefore the reconfiguration of the working frequency of the antenna is achieved.
Referring to fig. 3, the inner SPiN diode hologram ring 15 is composed of eight SPiN diode strings w7, and when the antenna is in an operating state, the 8 SPiN diode strings are all in a forward conducting state.
Referring to fig. 4, the outer SPiN diode hologram ring 17 is composed of eighteen SPiN diode strings w8, and when the antenna is in an operating state, the 18 SPiN diode strings are all in a forward conducting state.
The dc bias line 15011 is located at two ends of the 8-segment SPiN diode string to provide dc bias for the diode string; a dc bias line 17011 is located across the 18-segment SPiN diode string to provide dc bias to the diode string.
Referring to fig. 5, the SPiN diode is composed of a P + region 27, an N + region 26 and an intrinsic region 22, a metal contact region 23 is located at the P + region 27 and connected to the positive pole of a dc bias, and a metal contact region 24 is located at the N + region 26 and connected to the negative pole of the dc bias, so that all SPiN diodes in the entire SPiN diode string can be in a forward conducting state by applying a dc voltage.
In the embodiment, the rate-reconfigurable holographic antenna has the advantages of small volume, simple structure, easy processing, no complex feed source structure, rapid hopping of frequency, improvement of antenna gain, and hidden electromagnetic wave state when the antenna is closed, and can be used for various frequency hopping radio stations or equipment; all components of the phased array antenna are arranged on one side of the semiconductor substrate, and the phased array antenna is of a planar structure, is easy to array and can be used as a basic component unit of the phased array antenna.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (8)
1. A reconfigurable multilayer holographic antenna (1), characterized by comprising: a semiconductor substrate (11), an antenna module (13), a first holographic ring (15) and a second holographic ring (17); the antenna module (13), the first holographic ring (15) and the second holographic ring (17) are all manufactured on the semiconductor substrate (11) by adopting a semiconductor process;
the antenna module (13), the first holographic ring (15) and the second holographic ring (17) comprise SPiN diode strings which are connected in series in sequence.
2. The antenna (1) of claim 1, wherein the antenna module (13) comprises a first SPiN diode antenna arm (1301), a second SPiN diode antenna arm (1302), a coaxial feed line (1303), a first DC bias line (1304), a second DC bias line (1305), a third DC bias line (1306), a fourth DC bias line (1307), a fifth DC bias line (1308), a sixth DC bias line (1309), a seventh DC bias line (1310), an eighth DC bias line (1311);
wherein an inner core wire and an outer conductor of the coaxial feed line (1303) are soldered to the first DC bias line (1304) and the second DC bias line (1305), respectively; the first direct current bias line (1304), the fifth direct current bias line (1308), the third direct current bias line (1306), and the fourth direct current bias line (1307) are electrically connected to the first SPiN diode antenna arm (1301) along a length direction of the first SPiN diode antenna arm (1301), respectively;
the second direct current bias line (1305), the sixth direct current bias line (1309), the seventh direct current bias line (1310), and the eighth direct current bias line (1311) are electrically connected to the second SPiN diode antenna arm (1302) along a length direction of the second SPiN diode antenna arm (1302), respectively.
3. The antenna (1) according to claim 2, characterized in that the first SPiN diode antenna arm (1301) comprises a first SPiN diode string (w1), a second SPiN diode string (w2) and a third SPiN diode string (w3) connected in series, the second SPiN diode antenna arm (1302) comprises a fourth SPiN diode string (w4), a fifth SPiN diode string (w5) and a sixth SPiN diode string (w6) connected in series, and the first SPiN diode string (w1) and the sixth SPiN diode string (w6), the second SPiN diode string (w2) and the fifth SPiN diode string (w5), the third SPiN diode string (w3) and the fourth SPiN diode string (w4) comprise the same number of SPiN diodes, respectively.
4. The antenna (1) of claim 1, wherein the first holographic ring (15) comprises a plurality of first ring-shaped cells (1501) uniformly arranged in a ring shape, and the first ring-shaped cells (1501) comprise a ninth dc bias line (15011) and a seventh SPiN diode string (w7), the ninth dc bias line (15011) being electrically connected to both ends of the seventh SPiN diode string (w 7).
5. The antenna (1) of claim 1, wherein the second holographic ring (17) comprises a plurality of second ring-shaped cells (1701) arranged uniformly in a ring shape, and the second ring-shaped cells (1701) comprise a tenth dc bias line (17011) and an eighth SPiN diode string (w8), the tenth dc bias line (17011) being electrically connected to both ends of the eighth SPiN diode string (w 8).
6. An antenna (1) according to claim 2, characterized in that the semiconductor substrate (11) is an SOI substrate.
7. An antenna (1) according to claim 6, characterized in that the SPiN diode string comprises a plurality of SPiN diodes comprising a P + region (27), an N + region (26) and an intrinsic region (22), and further comprising a first metal contact region (23) and a second metal contact region (24); wherein,
the first metal contact region (23) is electrically connected to the P + region (27) at one end and to a dc bias line (1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011) or to the second metal contact region (24) of the adjacent SPiN diode, the second metal contact region (24) is electrically connected to the N + region (26) at one end and to the dc bias line (1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011) or to the first metal contact region (23) of the adjacent SPiN diode.
8. The antenna (1) according to claim 1, characterized in that it further comprises at least one third holographic ring (19) arranged outside said second holographic ring (17) and made on said semiconductor substrate (11) by means of semiconductor technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621390032.8U CN206441868U (en) | 2016-12-16 | 2016-12-16 | Restructural multilayer holographic antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621390032.8U CN206441868U (en) | 2016-12-16 | 2016-12-16 | Restructural multilayer holographic antenna |
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| Publication Number | Publication Date |
|---|---|
| CN206441868U true CN206441868U (en) | 2017-08-25 |
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| CN201621390032.8U Expired - Fee Related CN206441868U (en) | 2016-12-16 | 2016-12-16 | Restructural multilayer holographic antenna |
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| Country | Link |
|---|---|
| CN (1) | CN206441868U (en) |
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2016
- 2016-12-16 CN CN201621390032.8U patent/CN206441868U/en not_active Expired - Fee Related
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