CN206441868U - Restructural multilayer holographic antenna - Google Patents

Abstract

The utility model discloses a reconfigurable multi-layer holographic antenna. This antenna comprises semiconductor substrate (11) antenna module (13), the first holographic ring (15) and the second holographic ring (17); Antenna module (13), the first holographic ring (15) and the second The holographic ring (17) is all fabricated on the semiconductor substrate (11) by semiconductor technology; wherein, the antenna module (13), the first holographic ring (15) and the second holographic ring (17) all include sequentially connected string of SPiN diodes. The utility model manufactures SPiN diodes on semiconductor substrates, uses SPiN diodes to form source antennas and holographic structures, has small volume, simple structure, and is easy to process; the antenna uses coaxial cables as feed sources without complicated feed source structures; through DC bias The external voltage on the line can control the conduction or disconnection of the SPiN diode string, so as to realize the stealth of the antenna and the rapid frequency jump; the radiation characteristics of the target antenna can be realized through the structure.

Description

Reconfigurable multi-layer holographic antenna

technical field

The utility model belongs to the technical field of antennas, in particular to a reconfigurable multi-layer holographic antenna.

Background technique

All kinds of radio communication equipment, such as radar, radio, television, etc., must transmit signals through antennas, which require antennas to have high performance indicators. Holographic antenna is a special type of antenna, its design idea is unique, some indicators are better than other antennas, its design theory and engineering application have high research and practical value. Specifically, the holographic antenna is a kind of aperture antenna that uses a holographic structure to change the radiation characteristics of the feed source to obtain the required radiation. The feeding source of the holographic antenna does not need a complicated feeding network, which avoids the high loss of the feeding network of the microstrip antenna array. Moreover, the holographic antenna can be processed by printed circuit board technology, and the feed source and the holographic plate are placed on the same plane to achieve a low profile, which is a great advantage over reflector antennas. The holographic antenna has the excellent characteristic of low cross-polarization while achieving high gain.

Then, in order to break through the fixed performance of traditional antennas that are difficult to meet diverse system requirements and complex and changeable application environments, the concept of reconfigurable antennas has been valued and developed. Reconfigurable antennas can be divided into frequency reconfigurable antennas (including realizing broadband and multi-band), pattern reconfigurable antennas, polarization reconfigurable antennas and multi-electromagnetic parameter reconfigurable antennas according to their functions. By changing the structure of the reconfigurable antenna, one or several of the antenna's frequency, lobe pattern, polarization mode and other parameters can be reconfigured. Because of its advantages of small size, multiple functions, and easy implementation of diversity applications, it has become a research hotspot.

Therefore, how to make a reconfigurable holographic antenna becomes extremely important.

Utility model content

In order to solve the above leakage current problem, the embodiment of the utility model proposes a reconfigurable multi-layer holographic antenna.

The embodiment of the utility model provides a reconfigurable multi-layer holographic antenna, including:

Semiconductor substrate 11 antenna module 13, the first holographic ring 15 and the second holographic ring 17; the antenna module 13, the first holographic ring 15 and the second holographic ring 17 are all manufactured by semiconductor technology on the semiconductor substrate 11;

Wherein, the antenna module 13 , the first holographic ring 15 and the second holographic ring 17 all include SPiN diode strings serially connected in sequence.

In one embodiment of the present utility model, the antenna module 13 includes a first SPiN diode antenna arm 1301, a second SPiN diode antenna arm 1302, a coaxial feeder 1303, a first DC bias line 1304, a fifth DC bias Setting line 1308, third DC bias line 1306, fourth DC bias line 1307, fifth DC bias line 1308, sixth DC bias line 1309, seventh DC bias line 1310, eighth DC bias line 1311;

Wherein, the inner core wire and the outer conductor of the coaxial feeder 1303 are respectively welded to the first DC bias line 1304 and the second DC bias line 1305;

The first DC bias line 1304, the second DC bias line 1305, the third DC bias line 1306 and the fourth DC bias line 1307 are along the first SPiN diode antenna arm 1301 The length direction of each is electrically connected to the first SPiN diode antenna arm 1301;

The second DC bias line 1305, the sixth DC bias line 1309, the seventh DC bias line 1310, and the eighth DC bias line 1311 are along the second SPiN diode antenna arm 1302. The length directions are respectively electrically connected to the second SPiN diode antenna arms 1302 .

In one embodiment of the present utility model, the first SPiN diode antenna arm 1301 includes the first SPiN diode string w1, the second SPiN diode string w2 and the third SPiN diode string w3 which are serially connected sequentially. The two SPiN diode antenna arm 1302 includes the fourth SPiN diode string w4, the fifth SPiN diode string w5 and the sixth SPiN diode string w6 connected in series, and the first SPiN diode string w1 and the sixth SPiN diode string w6, the second SPiN diode string w2 and the fifth SPiN diode string w5, the third SPiN diode string w3 and the fourth SPiN diode string w4 respectively include the same number of SPiN diodes.

In one embodiment of the present utility model, the second holographic ring (17) includes a plurality of second annular units (1701) uniformly arranged in a ring shape, and the first annular unit 1501 includes a ninth A DC bias line 15011 and a seventh SPiN diode string w7, the ninth DC bias line 15011 is electrically connected to both ends of the seventh SPiN diode string w7.

In one embodiment of the present utility model, the second holographic ring 17 includes a plurality of second ring units 1701 uniformly arranged in a ring shape, and the second ring unit 1701 includes a tenth DC bias line 17011 and the eighth SPiN diode string w8, the tenth DC bias line 17011 is electrically connected to both ends of the eighth SPiN diode string w8.

In one embodiment of the present invention, the semiconductor substrate 11 is an SOI substrate.

In one embodiment of the present invention, the SPiN diode string includes a plurality of SPiN diodes, and the SPiN diode includes a P+ region 27, an N+ region 26 and an intrinsic region 22, and also includes a first metal contact region 23 and a second metal contact region. Two metal contact regions 24; wherein,

One end of the first metal contact region 23 is electrically connected to the P+ region 27 and the other end is electrically connected to the DC bias lines 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 or all adjacent The second metal contact region 24 of the SPiN diode, one end of the second metal contact region 24 is electrically connected to the N+ region 26 and the other end is electrically connected to the DC bias lines 1304, 1305, 1306, 1307, 1308 , 1309, 1310, 1311, 15011, 17011 or the first metal contact region 23 of the adjacent SPiN diode.

In one embodiment of the present invention, at least one third holographic ring 19 is further included, which is arranged outside the second holographic ring 17 and fabricated on the semiconductor substrate 11 by semiconductor technology.

Compared with the prior art, the beneficial effects of the utility model are:

First, small size, low profile, simple structure and easy processing;

Second, coaxial cable is used as the feed source, without complicated feed source structure;

Third, the SPiN diode is used as the basic unit of the antenna, and the reconfigurable frequency can be realized only by controlling its conduction or disconnection;

Fourth, the SPiN diode is used as the basic unit of the holographic structure, which can flexibly define the holographic structure pattern and improve the gain and concealment of the holographic antenna;

Fifth, all components are on the side of the semiconductor substrate, which is easy for plate making and processing.

Description of drawings

In order to clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the following will briefly introduce the drawings used in the description of the embodiments or the prior art. The drawings in the following description are some embodiments of the present utility model, and those skilled in the art can also obtain other drawings according to these drawings without creative work.

Figure 1 is a schematic structural diagram of a reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention;

Fig. 2 is a schematic structural diagram of an antenna module provided by an embodiment of the present invention;

Fig. 3 is a schematic structural diagram of a first annular unit provided by an embodiment of the present invention;

Fig. 4 is a schematic structural diagram of a second annular unit provided by an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a SPiN diode provided by an embodiment of the present invention;

Fig. 6 is a schematic structural diagram of a SPiN diode string provided by an embodiment of the present invention;

Fig. 7 is a schematic structural diagram of another reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention.

detailed description

In order to enable those skilled in the art to better understand the technical solution of the present invention, a reconfigurable multi-layer holographic antenna of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Examples represent possible variations only. Individual components and functions are optional unless explicitly required, and the order of operations may vary. Portions and features of some embodiments may be included in or substituted for those of other embodiments. The scope of embodiments of the present invention includes the full scope of the claims, and all available equivalents of the claims.

Below in conjunction with accompanying drawing, the utility model is described in further detail.

Embodiment one

Please refer to Fig. 1. Fig. 1 is a schematic structural diagram of a reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention, wherein the antenna includes:

Semiconductor substrate 11 antenna module 13, the first holographic ring 15 and the second holographic ring 17; the antenna module 13, the first holographic ring 15 and the second holographic ring 17 are all manufactured by semiconductor technology on the semiconductor substrate 11;

Please refer to FIG. 2 together. FIG. 2 is a schematic structural diagram of an antenna module provided by an embodiment of the present invention. The antenna module 13, the first holographic ring 15 and the second holographic ring 17 all include A string of SPiN diodes connected in series.

Wherein, the antenna module 13 includes a first SPiN diode antenna arm 1301, a second SPiN diode antenna arm 1302, a coaxial feeder 1303, a first DC bias line 1304, a second DC bias line 1305, a third DC bias line Setting line 1306, fourth DC bias line 1307, fifth DC bias line 1308, sixth DC bias line 1309, seventh DC bias line 1310, eighth DC bias line 1311;

Wherein, the inner core wire and the outer conductor of the coaxial feeder 1303 are respectively welded to the first DC bias line 1304 and the second DC bias line 1305;

The first DC bias line 1304, the fifth DC bias line 1308, the third DC bias line 1306 and the fourth DC bias line 1307 are along the length of the first SPiN diode antenna arm 1301 The directions are respectively electrically connected to the first SPiN diode antenna arm 1301;

The second DC bias line 1305, the sixth DC bias line 1309, the seventh DC bias line 1310, and the eighth DC bias line 1311 are along the second SPiN diode antenna arm 1302. The length directions are respectively electrically connected to the second SPiN diode antenna arms 1302 .

Optionally, the first SPiN diode antenna arm 1301 includes a first SPiN diode string w1, a second SPiN diode string w2, and a third SPiN diode string w3 connected in series, and the second SPiN diode antenna arm 1302 Including the fourth SPiN diode string w4, the fifth SPiN diode string w5 and the sixth SPiN diode string w6 connected in series, and the first SPiN diode string w1 and the sixth SPiN diode string w6, the second The SPiN diode string w2 and the fifth SPiN diode string w5 , the third SPiN diode string w3 and the fourth SPiN diode string w4 respectively include the same number of SPiN diodes.

Please refer to FIG. 3 together. FIG. 3 is a schematic structural diagram of a first ring unit provided by an embodiment of the present invention. The first holographic ring 15 includes a plurality of first ring units uniformly arranged in a ring shape 1501, and the first circular unit 1501 includes a ninth DC bias line 15011 and a seventh SPiN diode string w7, and the ninth DC bias line 15011 is electrically connected to both ends of the seventh SPiN diode string w7.

Please refer to FIG. 4 together. FIG. 4 is a schematic structural diagram of a second ring unit provided by an embodiment of the present invention. The second holographic ring 17 includes a plurality of second ring units uniformly arranged in a ring shape 1701, and the second ring unit 1701 includes a tenth DC bias line 17011 and the eighth SPiN diode string w8, and the tenth DC bias line 17011 is electrically connected to two of the eighth SPiN diode string w8 end.

In the above embodiments, the semiconductor substrate 11 is an SOI substrate.

In the above embodiment, the SPiN diode string includes a plurality of SPiN diodes, please refer to Figure 5 and Figure 6 together, Figure 5 is a schematic structural diagram of a SPiN diode provided by the embodiment of the present invention, and Figure 6 is a schematic diagram of the structure of the present invention A schematic structural diagram of an SPiN diode string provided in the embodiment. Each SPiN diode string includes a plurality of SPiN diodes, and these SPiN diodes are connected in series. The SPiN diode includes a P+ region 27, an N+ region 26 and an intrinsic region 22, and also includes a first metal contact region 23 and a second metal contact region 24; wherein,

One end of the first metal contact region 23 is electrically connected to the P+ region 27 and the other end is electrically connected to the DC bias lines 1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011 or all adjacent The second metal contact region 24 of the SPiN diode, one end of the second metal contact region 24 is electrically connected to the N+ region 26 and the other end is electrically connected to the DC bias lines 1304, 1305, 1306, 1307, 1308 , 1309, 1310, 1311, 15011, 17011 or the first metal contact region 23 of the adjacent SPiN diode. That is, the metal contact region 23 of the SPiN diode at one end of the SPiN diode string is connected to the positive pole of the DC bias, and the metal contact region 24 of the SPiN diode at the other end of the SPiN diode string is connected to the negative pole of the DC bias, by applying a DC voltage All the SPiN diodes in the entire SPiN diode string can be in the forward conduction state.

Further, please refer to FIG. 7. FIG. 7 is a structural schematic diagram of another reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention. The antenna may also include at least one third holographic ring 19, which is arranged on the The outer side of the second holographic ring 17 is fabricated on the semiconductor substrate 11 using semiconductor technology.

In this embodiment, by making SPiN diodes on the semiconductor substrate, the source antenna and holographic structure are formed by using SPiN diodes, which are small in size, simple in structure, and easy to process; the antenna uses a coaxial cable as the feed source without complicated feed source structure; The applied voltage on the line can control the conduction or disconnection of the SPiN diode string, so as to realize the stealth of the antenna and the rapid frequency jump; the radiation characteristics of the target antenna can be realized through the structure.

Embodiment two

Please refer to FIG. 1-FIG. 5 again. Based on the above-mentioned embodiments, this embodiment will be described in detail by taking a double-layer holographic antenna as an example. Specifically, the antenna may include: a semiconductor substrate, an SPiN diode antenna arm, a double-layer SPiN diode holographic ring, a coaxial feeder line and a DC bias line, wherein the SPiN diode antenna arm, a double-layer SPiN diode holographic ring and a DC bias The wiring is made on the semiconductor substrate by semiconductor technology. The inner core wire and the outer conductor (shielding layer) of the coaxial feeder are respectively welded on the metal contacts of the SPiN diode antenna arm, and the two welding points are respectively connected with a DC bias line as a common Negative electrode; SPiN diodes are connected end to end in turn to form an SPiN diode string. The SPiN diode antenna arm is composed of three sections of SPiN diode strings. Each SPiN diode string has a DC bias line externally connected to the positive voltage; the length of the antenna arm is 1/4 of the wavelength. The inner holographic ring is approximately replaced by eight identical SPiN diode strings. The length of each SPiN diode string is approximately equal to the length of the antenna. The ring radius is determined by the formula of the holographic structure. The radius of the ring in the utility model is about four three times one-third of a wavelength. Among them, the holographic structure formula is:

Among them, r is the radius of the innermost ring, is the initial phase difference between the vertically incident plane wave and the radiation field of the source antenna, for the electric field in direction component, k is the wave vector.

It can be known from the formula that the holographic structure is a group of concentric circles whose origin is at the center of the circle. In the present invention, the radius r can be three quarters of the wavelength.

The outer holographic ring is approximately replaced by eighteen identical SPiN diode strings, the length of each SPiN diode string is approximately equal to the length of the antenna, and the distance between the inner and outer rings is determined by the formula of the holographic structure. The distance between the two rings is one wavelength.

The semiconductor substrate is a Si-based SOI semiconductor chip.

The SPiN diode antenna arm consists of three sections of SPiN diode strings, and each SPiN diode string has a DC bias line externally connected to the positive voltage. It can be understood that the antenna arm in the present invention can be composed of any number of SPiN diode strings. Of course, the number of SPiN diodes included in the diode string can also be determined according to actual use and process conditions, and there is no limitation here.

The coaxial feeder adopts a low-loss coaxial cable, and the inner core wire and outer conductor (shielding layer) of the coaxial feeder are respectively welded to the metal contacts of the SPiN diode antenna arm, and the two welding points are respectively connected with a DC bias line as a common negative electrode.

The double-layer holographic ring is approximately replaced by several sections of identical SPiN diode strings, and each section of SPiN diode strings is in a forward conduction state when the antenna is working, so as to realize the directional change of the antenna radiation characteristics and the improvement of the gain.

The DC bias line can be fabricated on the semiconductor substrate by chemical vapor deposition. The materials used, such as copper, aluminum, etc., can also be realized by highly doped polysilicon. The DC bias line is used to apply DC bias to the SPiN diode string. .

Please refer to Fig. 1 and Fig. 2 together, this antenna consists of semiconductor substrate 11, SPiN diode antenna arms 1301 and 1302, coaxial feeder 1303, DC bias line (1306, 1307, 1308, 1304, 1305, 1309, 1310, 1311), inner layer SPiN diode holographic ring 15, outer layer SPiN diode holographic ring 17, wherein SPiN diode antenna arms 1301, 1302, inner layer SPiN diode holographic ring 15, outer layer SPiN diode holographic ring 17 and DC The bias wires (1306, 1307, 1308, 1304, 1305, 1309, 1310, 1311) are fabricated on the semiconductor substrate using semiconductor technology, and the inner core wire and outer conductor (shielding layer) of the coaxial feeder 1303 are respectively welded to the DC bias on lines 1304 and 1305.

SPiN diode antenna arms 1301, 1302 are composed of SPiN diode strings w1, w2, w3, w4, w5, w6, wherein w1 and w6 have equal lengths, w2 and w5 have equal lengths, and w3 and w4 have equal lengths.

The DC bias lines 1304 and 1305 are respectively connected to the negative pole of the voltage, and the DC bias line group (1308, 1309), the DC bias line group (1307, 1310) and the DC bias line group (1306, 1311) are respectively connected to the positive voltage pole , and at any working moment, only one set of DC bias lines can be connected to the positive voltage. By controlling the voltage of the DC bias line set, the SPiN diode string can be selectively turned on. The conductive SPiN diode will be in the intrinsic region Generates solid-state plasmas with metal-like properties that can be used as radiating structures for antennas. When different SPiN diode strings work, the electrical dimension and length of the antenna will be changed, thereby realizing the reconfigurability of the operating frequency of the antenna.

Please refer to FIG. 3 , the inner SPiN diode holographic ring 15 is composed of eight sections of SPiN diode strings w7 , and when the antenna is in working state, the eight sections of SPiN diode strings are all in the forward conduction state.

Please refer to FIG. 4 , the outer SPiN diode holographic ring 17 is composed of 18 segments of SPiN diode strings w8 , and when the antenna is in working state, the 18 segments of SPiN diode strings are all in the forward conduction state.

The DC bias line 15011 is located at both ends of the 8-segment SPiN diode string to provide a DC bias for the diode string; the DC bias line 17011 is located at both ends of the 18-segment SPiN diode string to provide a DC bias for the diode string.

Please refer to FIG. 5, the SPiN diode is composed of a P+ region 27, an N+ region 26 and an intrinsic region 22. The metal contact region 23 is located at the P+ region 27 and connected to the anode of the DC bias. The metal contact region 24 is located at the N+ region 26. Connected to the negative electrode of the DC bias, all the SPiN diodes in the entire SPiN diode string can be in the forward conduction state by applying a DC voltage.

In this embodiment, the rate reconfigurable holographic antenna is small in size, simple in structure, easy to process, has no complicated feed source structure, can jump in frequency quickly, improves the gain of the antenna, and will be in an electromagnetic stealth state when the antenna is turned off, and can be used in various Frequency hopping radio or equipment; because all its components are on the side of the semiconductor substrate, it is a planar structure, easy to form an array, and can be used as the basic component of a phased array antenna.

The above content is a further detailed description of the utility model in combination with specific preferred embodiments, and it cannot be assumed that the specific implementation of the utility model is only limited to these descriptions. For those of ordinary skill in the technical field to which the utility model belongs, on the premise of not departing from the concept of the utility model, some simple deduction or replacement can also be made, which should be regarded as belonging to the protection scope of the utility model.

Claims (8)

1. A reconfigurable multilayer holographic antenna (1), characterized by comprising: a semiconductor substrate (11), an antenna module (13), a first holographic ring (15) and a second holographic ring (17); the antenna module (13), the first holographic ring (15) and the second holographic ring (17) are all manufactured on the semiconductor substrate (11) by adopting a semiconductor process;

the antenna module (13), the first holographic ring (15) and the second holographic ring (17) comprise SPiN diode strings which are connected in series in sequence.

2. The antenna (1) of claim 1, wherein the antenna module (13) comprises a first SPiN diode antenna arm (1301), a second SPiN diode antenna arm (1302), a coaxial feed line (1303), a first DC bias line (1304), a second DC bias line (1305), a third DC bias line (1306), a fourth DC bias line (1307), a fifth DC bias line (1308), a sixth DC bias line (1309), a seventh DC bias line (1310), an eighth DC bias line (1311);

wherein an inner core wire and an outer conductor of the coaxial feed line (1303) are soldered to the first DC bias line (1304) and the second DC bias line (1305), respectively; the first direct current bias line (1304), the fifth direct current bias line (1308), the third direct current bias line (1306), and the fourth direct current bias line (1307) are electrically connected to the first SPiN diode antenna arm (1301) along a length direction of the first SPiN diode antenna arm (1301), respectively;

the second direct current bias line (1305), the sixth direct current bias line (1309), the seventh direct current bias line (1310), and the eighth direct current bias line (1311) are electrically connected to the second SPiN diode antenna arm (1302) along a length direction of the second SPiN diode antenna arm (1302), respectively.

3. The antenna (1) according to claim 2, characterized in that the first SPiN diode antenna arm (1301) comprises a first SPiN diode string (w1), a second SPiN diode string (w2) and a third SPiN diode string (w3) connected in series, the second SPiN diode antenna arm (1302) comprises a fourth SPiN diode string (w4), a fifth SPiN diode string (w5) and a sixth SPiN diode string (w6) connected in series, and the first SPiN diode string (w1) and the sixth SPiN diode string (w6), the second SPiN diode string (w2) and the fifth SPiN diode string (w5), the third SPiN diode string (w3) and the fourth SPiN diode string (w4) comprise the same number of SPiN diodes, respectively.

4. The antenna (1) of claim 1, wherein the first holographic ring (15) comprises a plurality of first ring-shaped cells (1501) uniformly arranged in a ring shape, and the first ring-shaped cells (1501) comprise a ninth dc bias line (15011) and a seventh SPiN diode string (w7), the ninth dc bias line (15011) being electrically connected to both ends of the seventh SPiN diode string (w 7).

5. The antenna (1) of claim 1, wherein the second holographic ring (17) comprises a plurality of second ring-shaped cells (1701) arranged uniformly in a ring shape, and the second ring-shaped cells (1701) comprise a tenth dc bias line (17011) and an eighth SPiN diode string (w8), the tenth dc bias line (17011) being electrically connected to both ends of the eighth SPiN diode string (w 8).

6. An antenna (1) according to claim 2, characterized in that the semiconductor substrate (11) is an SOI substrate.

7. An antenna (1) according to claim 6, characterized in that the SPiN diode string comprises a plurality of SPiN diodes comprising a P + region (27), an N + region (26) and an intrinsic region (22), and further comprising a first metal contact region (23) and a second metal contact region (24); wherein,

the first metal contact region (23) is electrically connected to the P + region (27) at one end and to a dc bias line (1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011) or to the second metal contact region (24) of the adjacent SPiN diode, the second metal contact region (24) is electrically connected to the N + region (26) at one end and to the dc bias line (1304, 1305, 1306, 1307, 1308, 1309, 1310, 1311, 15011, 17011) or to the first metal contact region (23) of the adjacent SPiN diode.

8. The antenna (1) according to claim 1, characterized in that it further comprises at least one third holographic ring (19) arranged outside said second holographic ring (17) and made on said semiconductor substrate (11) by means of semiconductor technology.